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Atomic migration in eutectic SnBi solder alloys due to current stressing

Published online by Cambridge University Press:  31 January 2011

Chih-ming Chen  and
Chih-chieh Huang
Chih-ming Chen*
Affiliation:
Department of Chemical Engineering, National Chung-Hsing University, Taichung 402, Taiwan, Republic of China
Chih-chieh Huang
Affiliation:
Department of Chemical Engineering, National Chung-Hsing University, Taichung 402, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: chencm@nchu.edu.tw
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Abstract

Current stressing at densities from 2.9 to 7.3 × 104 A/cm2 has significant effects on the atomic migration of eutectic SnBi solder alloys. At lower density (2.9 × 104 A/cm2), electromigration dominates the migration of both Sn and Bi, and drives Sn and Bi atoms to migrate toward the anode side. While at higher densities (4.4 and 7.3 × 104 A/cm2), the enhanced Bi electromigration induces a back stress, which promotes a reversed migration of Sn toward the cathode side. A large number of Sn atoms accumulate at the cathode side and form lumps there.

Keywords

BiElectromigrationSn
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 1051 - 1056
Copyright
Copyright © Materials Research Society 2008

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References

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