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Effects of electromigration on the growth of intermetallic compounds in Cu/SnBi/Cu solder joints

Published online by Cambridge University Press:  31 January 2011

X. Gu ,
D. Yang ,
Y.C. Chan  and
B.Y. Wu
X. Gu
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, People’s Republic of China
D. Yang
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, People’s Republic of China
Y.C. Chan*
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, People’s Republic of China
B.Y. Wu
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: eeycchan@cityu.edu.hk
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Abstract

In this study, the effects of electromigration (EM) on the growth of Cu–Sn intermetallic compounds (IMCs) in Cu/SnBi/Cu solder joints under 5 × 103 A/cm2 direct current stressing at 308, 328, and 348 K were investigated. For each Cu/SnBi/Cu solder joint under current stressing, the IMCs at the cathode side grew faster than that at the anode side. The growth of these IMCs at the anode side and the cathode side were enhanced by electric current. The growth of these IMCs at the cathode followed a parabolic growth law. The kinetics parameters of the growth of the IMCs were calculated from the thickness data of the IMCs at the cathode side at different ambient temperatures. The calculated intrinsic diffusivity (D0) of the Cu–Sn IMCs was 9.91 × 10−5 m2/s, and the activation energy of the growth of the total Cu–Sn IMC layer was 89.2 kJ/mol (0.92 eV).

Keywords

ElectromigrationElectronic material
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 10 , October 2008 , pp. 2591 - 2596
Copyright
Copyright © Materials Research Society 2008

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References

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