Monday Morning, October 29, 2012 - American Vacuum Society

Greetings 

On behalf of the entire AVS community, we welcome you to Tampa and the 59th AVS International Symposium and 

Exhibition. We wish you a productive and stimulating week filled with discussions and new insights as you enjoy the 

technical program and related activities. 

This year, Dr. Joel Kostka, Georgia Institute of Technology, will present the plenary lecture entitled “The BP Oil Spill 

in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?” (Monday, noon). Dr. Kostka will 

provide us with a visionary platform that brings together aspects of multiple surface science programs with emphasis 

on Biointerfaces, Biofilms and Biofouling. 

AVS is committed to developing a fundamental understanding of surfaces and interfaces through core programs in 

electronic and magnetic materials, micro- and nano-electromechanical systems, nano-electronics, nanometer science 

and technology, plasma science and technology, surface science to inter-facial phenomena, surface engineering, thin 

films, and vacuum science and technology. We are certain that you will find new insights and knowledge as you 

enjoy these foundational sessions. Enjoy! 

In an effort to bring emphasis to prominent research issues across our broader core programs, a number of focus topics 

have been organized and will be featured in the symposium including Actinides and Rare Earths, Biointerphases, 

Electron Transport in Low Dimensional Materials, Energy Frontiers, Graphene and Related Materials, Helium Ion 

Microscopy, In Situ Spectroscopy and Microscopy, Nanomanufacturing Science and Technology, Transparent 

Conductors and Printable Electronics, Oxide Heterostructures, Scanning Probe Microscopy, Spectroscopic 

Ellipsometry, and Tribology. Here you can enjoy the benefit of multidisciplinary perspectives that are the strength of 

AVS. Engage your own perspectives as well! 

The end result is a program that consists of ~140 oral sessions, more than 1,300 talks, over 250 invited speakers, and 

two evenings of poster presentations where stimulating and passionate scientific discussions will be facilitated with 

low temperature libations. Many of us will also get a chance to visit the Exhibition Hall where ever-increasing 

numbers of exhibitors will be displaying their latest technology and equipment that make cutting edge science and the 

latest applications possible. 

If this is your first time at an AVS meeting, we want to invite you to be a regular member of the AVS community. 

Stop by the division business meetings (most are on Tuesday in the late afternoon); get involved with next year’s programming 

by talking to Jim Fitz-Gerald, who will Chair the 60th AVS Symposium in Long Beach, CA; attend the 

awards ceremony on Wednesday evening; stop by the AVS Publication Booth to talk to the Staff and the Editors; take 

advantage of your membership and become engaged in the dynamic and diverse research community that is AVS. We 

encourage all participants to submit their work to our internationally recognized scholarly Journal of Vacuum Science 

and Technology A & B (http://avspublications.org/jvsta/or http://avspublications.org/jvstb/). The only way to find out 

what AVS has to offer is to experience the AVS community and there is no better time to start than this week! 

Thank you for your participation and contribution to this year’s AVS Symposium and thanks to all the dedicated 

volunteers and the outstanding AVS staff who have worked to create this exciting program. 

Charles R. (Chip) Eddy, Jr. 

Program Chair 

U.S. Naval Research Lab. 

Enjoy the week! 

James M. “Fitz” Fitz-Gerald 

Vice-Program Chair 

University of Virginia

TABLE OF CONTENTS 

5K Run Information and Registration Form ................................66 

Ask the Experts ............................................................................39 

AVS Co-sponsored/endorsed 2013 Topical Conferences..........267 

AVS Store ....................................................................................23 

AVS Membership Information ................................................8, 11 

AVS Publication Information ................................................68–71 

ASTM E-42/ASSD Workshop.....................................................15 

Author Index ......................................................................188–212 

AVS Awardees List - Past and Present..................................26–27 

AVS Awardees - Current .......................................................29–32 

AVS Awards Ceremony and Reception Invitation ......................28 

AVS Corporate Members.............................................................25 

AVS Officers and Directors...........................................................7 

AVS Sponsors ..............................................................................24 

Biomaterial Interfaces Division Plenary Session..............................14 

Career Center Information ...........................................................20 

Companion Tours Information...............................................62–65 

Division Awards.....................................................................34–35 

EMPD Industrial Forums .............................................................15 

Equipment Exhibitors and Exhibit Information.....................36–37 

Exhibitor Technology Spotlight Sessions ....................................38 

EXHIBIT PROGRAM.....................................................213–266 

Floor Plan – Tampa Convention Center...........................13, 57, 72 

Floor Plan – Tampa Marriott Waterside Hotel & Marina......12, 56 

Future Symposia Locations........................................................268 

Ground Transportation Information.............................................10 

Hotel Information.........................................................................10 

Job Information Forum ................................................................18 

JVST Manuscript Publication Information.....................................8 

JVST Writer’s Workshop .............................................................18 

Meeting and Special Events...................................................58–59 

Morton M. Traum Presentation....................................................14 

Parking Information .....................................................................10 

Plenary Lecture - Symposium......................................................40 

Professional Leadership Workshop and TownHall Meeting .16–17 

Program Committee .......................................................................6 

QSA14..........................................................................................14 

Recording Equipment Policy .........................................................9 

Student Chapter Information........................................................19 

Student Activities.........................................................................33 

Session Overview...................................................................53–55 

Social Media Information ............................................................22 

SHORT COURSE INFORMATION & FORM......................60–61 

Short Courses Daily Special Events........80, 101, 131, 153,181 

SYMPOSIUM REGISTRATION FORM..................................3 

Symposium Registration, Cancellation, Lost Badge Procedures.........8 

TECHNICAL SESSIONS ..................................................78–187 

Technical Program Description..........................................41–52 

Authors Index...............................................................188–212 

Daily Special Events ................................76, 80, 101, 131, 153 

Key to Session Codes.............................................................73 

Program-at-a-Glance .................................................4–5,74–75 

Sunday, Oct. 28 ......................................................................78 

Monday morning, Oct. 29 ......................................................82 

Monday afternoon, Oct. 29.....................................................91 

Tuesday morning, Oct. 30 ....................................................102 

Tuesday afternoon, Oct. 30 ..................................................113 

Wednesday morning, Oct. 31...............................................132 

Wednesday afternoon, Oct. 31 .............................................143 

Thursday morning, Nov. 1 ...................................................155 

Thursday afternoon, Nov. 1..................................................166 

Friday morning, Nov. 2 ........................................................183 

Tutorials .......................................................................................14 

SYMPOSIUM HQ HOTEL 

Tampa Convention Center Tampa Marriott Waterside 

333 S. Franklin Street 700 South Florida Ave. 

Tampa, FL 33602 Tampa, FL 33602 

AVS NATIONAL OFFICE 

125 Maiden Lane, 15 th Floor 

New York, NY 10038 

212-248-0200 FAX: 212-248-0245 

avsnyc@avs.org www.avs.org 

SYMPOSIUM REGISTRATION HOURS 

Sun. 2:00 p.m. to 6:00 p.m. Wed. 7:30 a.m. to 5:00 p.m. 

Mon. 7:30 a.m. to 5:00 p.m. Thurs. 7:30 a.m. to 5:00 p.m. 

Tues. 7:00 a.m. to 5:00 p.m. Fri. 7:30 a.m. to 10:00 a.m. 

SHORT COURSE REGISTRATION HOURS 

Sun. 2:00 p.m. to 6:00 p.m. Wed. 7:30 a.m. to 5:00 p.m. 

Mon. 7:30 a.m. to 5:00 p.m. Thurs. 7:30 a.m. to 5:00 p.m. 

Tues 7:00 a.m. to 5:00 p.m. Fri. 7:30 a.m. to 9:30 a.m. 

SYMPOSIUM REGISTRATION FEES 

Pre-registration Registration 

(Pre-Paid) (On-Site) 

Member*** $540.00 $635.00 

Non-Member** $600.00 $710.00 

Student Member*** * $190.00 $225.00 

Student Non-Member** * $230.00 $270.00 

Early Career Member*** * $285.00 $335.00 

Early Career Non-Member** *$335.00 $395.00 

One day $300.00 $350.00 

Exhibits Only Free $20.00 

Pre-registration deadline: October 8, 2012 

AVS tax ID Number: 04-2392373 

*A bonafide full-time university student must present student 

I.D. Part-time students do not qualify for a student rate. If 

your highest degree is within 5 years you may register as an 

Early Career. 

**Non-member registration entitles you to a complimentary 2013 

electronic AVS membership— report to the AVS Booth 733. 

***Full Week, Student, and Early Career member registration fee 

INCLUDES your 2013 membership renewal dues. For more 

information report to the AVS Booth 733. 

EXHIBIT SHOW HOURS 

Tuesday, October 30 10:00 a.m. to 5:30 p.m. 

Wednesday, October 31 10:00 a.m. to 4:30 p.m. 

Thursday, November 1 10:00 a.m. to 2:00 p.m. 

OFFICE LOCATIONS 

Symposium Registration Lobby Area 

Short Course Registration Lobby Area 

Staff Office/Press 3 

AVS Store Exhibit Hall Booth 733 

Career Center Exhibit Hall Booth 733 

Publications Booth Exhibit Hall Booth 728 

Presenters Preview 1

AVS 59 th INTERNATIONAL SYMPOSIUM & EXHIBITION 

Tampa, FL, USA October 28-November 2, 2012 

SYMPOSIUM REGISTRATION FORM Please print clearly 

________________ __________________________________ ______________________________ 

First Name Last Name Job Title 

_______________________________ _________________________________________________ 

Organization/University Affiliation Street Address 

_______________________ _______ ___________________ ____________________________ 

City State Postal Code (required) Country 

______________ ______________ ____________________________ ________________ 

Telephone Number Fax Number E-mail Address (required field) Year of highest degree 

Please circle one number from each 

section below. 

1. EMPLOYMENT 

1A. Industry 

1B. Government/Research Institute 

1C. Academia 

1D. Not for Profit 

1E. Consultant 

1F. Other (specify) 

2. PRINCIPLE AREA OF INTEREST 

2A. Advanced Surface Engineering 

2B. Applied Surface Science 

2C. Biomaterial Interfaces/Plenary 

2D. Electronic Materials & Processing 

2E. Magnetic Interfaces & 

Nanostructures 

2F. MEMS and NEMS 

2G. Manufacturing Science & 

Technology 

2H. Nanometer-Scale Science & 

Technology 

2I. Plasma Science & Technology 

2J. Surface Science 

2K. Thin Film 

2L. Vacuum Technology 

2M. Exhibit 

3. FOCUS TOPICS 

3A. Actinides & Rare Earths 

3B. Biofilms & Biofouling 

3C. Biointerphases 

3D. Electron Transport at the 

Nanoscale 

3E. Energy Frontiers 

3F. Graphene and Related Materials 

3G. Helium Ion Microscopy 

3H. In Situ Microscopy & Spectroscopy 

3I. Nanomanufacturing 

3J. Oxide Heterostructures 

3K Scanning Probe Microscopy 

3L. Spectroscopic Ellipsometry 

3M. Transparent Conductors 

3N. Tribology 

AVS, c/o Experient 

P.O. Box 4088, Frederick, MD 21705 

Fax: 301-694-5124, www.avs.org 

FOR OFFICE USE ONLY 

Amount received _________ Date Received ___________ 

Check# _________ Cashier’s initials ___________ 

(please check appropriate fee) PRE-REGISTRATION ON-SITE 

Member* Full Week A) $540 A) $635 

Non-Member** Full Week B) $600 B) $710 

Student Member* C) $190 C) $225 

Student Non-Member** D) $230 D) $270 

Early Career Member (within 5 years of highest degree)* E) $285 E) $335 

Early Career Non-Member (within 5 yrs of highest degree)* F) $335 F) $395 

One Day (please circle day) $300 $350 

J) Sunday K) Monday L) Tuesday M) Wednesday N) Thursday O) Friday 

AVS Honorary Member* H) $0 

AVS Emeritus Member* Q) $0 

(Sunday) Nanomanufacturing Tutorial T) $100 T) $115 

(Sunday) Nanomanufacturing (Student) 

U) 

$75 U) $85 

EXHIBITS ONLY 

VOLUNTARY CONTRIBUTION: $________ 

Quantitative Surface Analysis (Full) Y) $115 

Quantitative Surface Analysis (Student) Z) $70 

X) $0 X) $20 

Total amount paid $ ________________________ 

*MEMBERS: AVS Full Week, Student, Early Career, Honorary, and Emeritus Member registrant 

registration fees INCLUDE your 2013 AVS Membership Renewal Dues. You will receive a membership 

renewal confirmation following the Symposium. 

**NON-MEMBERS: AVS Full Week, Student, and Early Career Non-Member registrants will receive an 

automatic complimentary 2013 electronic AVS membership. 

Report to the AVS Store (Exhibit Hall-Booth #733) with any additional questions on the above. 

4. Job Description 

4A. Corporate Officer 4G. Professor 

4B. R&D Executive 4H. Postdoctoral Fellow 

4C. Project Manager 4I. Student 

4D. Staff Scientist 4J. Group Leader 

4E. Sales/Marketing 4K. Technician 

4F. Engineer 4L. Other (specify) _______________ 

METHOD OF PAYMENT (Only checks, credit cards, or money orders will be accepted/NO CASH) 

Check enclosed (payable to AVS in U.S. dollars drawn on a U.S. bank) 

Charge my MasterCard Visa American Express 

Card number _______________________________________________________________________ 

Expiration date _________________ Signature __________________________________________ 

AVS Tax I.D. number is 04-2392373 

Please send registration form and proper payment by October 8, 2012

Room/ 

Day 

SuA 

MoM 

MoA 

TuM 

TuL 

TuA 

TuP 

WeM 

WeL 

WeA 

ThM 

ThL 

ThA 

ThP 

FrM 

6 7 9 10 11 12 13 14 15 

AC+MI+SS+TF 

Electronic 

Structure and 

Spectroscopy of 

Actinides 

AC+TF+SS+MI 

Actinides and 

Rare Earths: 

Thin Films and 

Surface Science 

AC+EN 

Energetic Mtls 

Issues for Nuclear 

Power: Fuels, 

Corrosion and 

Waste Disposal 

MI+EN+BI 

Fundamental 

Problems in 

Magnetism 

MI 

Topological 

Insulators and 

Rashba 

MI+OX 

Spintronics, 

Magnetoelectric, 

Multiferroics 

MI+SP+AS 

Emerging Probes 

in Magnetic 

Imaging, 

Reflectometry and 

Characterization 

OX+EM+MI+ 

NS+TF 

Structure–Property 

Relationships in 

Epitaxial Oxide 

Interfaces 

OX+SS+TF+MI 

Chemistry of 

Oxide Surfaces 

and Interfaces 

IS+AS+SS+EN 

In Situ Spectroscopic 

Studies of 

Catalysis and Gas- 

Solid Reactions 

IS+AS+BI+ET+ 

GR+NS 

In Situ Studies of 

Organic and Soft 

Materials and In 

Situ Microscopy 

IS+AS+OX+ET 

In Situ 


of Solids: Film 

Growth, Defects, 


TC+EM+AS 

Printable and 

Flexible 

Electronics 

TC+EM+AS+ 

TF+EN 

Transparent 

Conductors and 

Devices 

EN+NS 

Thermophotovolt 

aics, 

Thermoelectrics 

and Plasmonics 

EM+TF+OX 

+GR 

High-k 

Dielectrics for 

MOSFETs I 

EM+TF+OX 

+GR 

High-k 


MOSFETS II 

EM 

Electrical Testing 

and Defects in 

III-V’s 

EM 

Materials and 

Processes for 

Advanced 

Interconnects 

EM+TF 

Hybrid 

Electronic 

Materials and 

Interfaces 

EM+OX 

Oxides and 


Novel Devices 

and Ultra-dense 

Memory 

EM 

Processing for 

Ultra Low Power 

Electronics + 

Semiconductor 

Heterostructures I 

EM+MI 

Semiconductor 

Heterostructures 

II + Heusler 

Alloys 

MN+AS 


of Surfaces and 

Interfaces in 

MEMS and 

NEMS 

MN 

Multi-scale 

Interactions of Mtls 

and Fabrication at 

the Micro- and 

Nano-scale 

MN 

Optomechanics 

and Photonic 

MEMS and 

NEMS 

TF+AS 

Modeling and 

Analysis of Thin 

Films 

TF 

Thin Films for 

Encapsulation, 

Packaging, and 

Biomedical 

Devices 

TF+MI 


Memory and 

Data Storage 

TF+EM+SE+NS 

Nanostructuring 

Thin Films 

TF+EM+SS 

Applications of 

Self-Assembled 

Monolayers and 

Layer-by-Layer 

Assemblies 

TF 

ALD Enabled 

Applications 

TF+EN 

ALD for Energy 

TF 

ALD Reactions 

and Film 

Properties 

TF2 

ALD for Hybrid 

Films and 

Bioapplications 

TF+SE+NS 

Glancing Angle 

Deposition 

(GLAD) 

TF+AS 

Thin Films: 

Growth and 

Characterization- 

I 

TF+NS+EM 

Thin Films: 

Growth and 


II 

TF+AS+SS 

Thin Films: 

Growth and 


III 

4 

2012 Technical Program 

NS 

Nanoparticles 

and Quantum 

Structures 

NS+SP 

Nanopatterning 

and 

Nanolithography 

NS+EN 

One-Dimensional 

Nanowires and 

Nanotubes 

NS+EN+GR 

Nanomaterials in 

Two and Three 

Dimensions 

NS+AS+SS+SP 

Nanoscale 

Catalysis and 

Surface 

Chemistry 

NS 

Nanophotonics 


NS 

Nanoscale 

Imaging and 

Microscopy 

GR+EM+NS+ 

PS+SS+TF 

Graphene 

Growth 

GR+EM+ET+ 

NS+TF 

Electronic 

Properties and 

Charge Transport 

GR+AS+EM+ 

MI+MN 

Optical, Magnetic, 

Mechanical and 

Thermal Properties 

GR+AS+NS+SP 

+SS 

Graphene 


Incl. Microscopy 

and Spectroscopy 

GR+AS+BI+PS 

+SS 

Graphene Surface 

Chem., Functionalization, 

Biological & 

Sensor Applications 

GR+AS+EM+ 

NS+SS 

Dopants & Defects 

in Graphene; 

Graphene Interfaces 

w/Other Materials 

GR+AS+NS+SS 

Graphene 


GR+EM+NS+ 

SS+TF 

Beyond Graphene: 

BN & Other 2D 

Elect. Mtls; 2D 


GR+EM+ET+ 

MS+NS 

Graphene Device 

Physics and 

Applications 

VT 

Vacuum Gauging 

and Metrology 

VT 

Gas Flow, Leaks, 

Permeation and 

Mass Analysis 

VT 

Pumping, Gas 

Dynamics and 

Modeling 

VT 

Accelerator and 

Ultra-Clean 

Vacuum Systems 

VT+AS+SS 

Surface Analysis 

and Vacuum 

Manufacturing 

for Accelerators 

LB+EM+GR+ 

MN+TR 

Select Topics in 

Surface and 

Interface Science 

EM+SS+AS+NS 

Nanoelectronic 

Interfaces, 

Materials, and 

Devices 

EM+TF+AS 

Growth and 


of Group III- 

Nitride Materials 

EM+NS 

Low-Resistance 

Contacts to 

Nanoelectronics 

EN+NS 

Nanostructured 

Solar Cells 

EN+TF 

Chalcogenide 

Solar Cells I 

EN+TF 

Chalcogenide 

Solar Cells II 

EN+TF 

Thin Film, 

Heterostructured, 

and Organic 

Solar Cells 

EN+PS 

Plasmas for 

Photovoltaics 

and Energy 

Applications 

EN+TF 


Energy 

Applications 

EN+NS 

Batteries and 

Fuel Cells 

EN+AS 


of Energy 

Materials and 

Systems 

EN+SS 

Photocatalysis 

and Solar Fuels

at a Glance 

16 19 20 21 22 23 24 25 Central Hall West Hall 

NM+AS+MS 

Metrology and 

Environmental 

Issues in Nanomanufacturing 

NM+NS+MS+ 

EM 

ALD & Scalable 

Processes for 

Nano- 

manufacturing 

NM+MS 

All Invited Session: 

Challenges of 

Nanomanufacturing 

from an Industrial 

Perspective 

SP+AS+BI+ET 

+MI+NS 

Advances in 

Scanning Probe 

Imaging 

SP+AS+BI+ET 

+MI+NM+NS+ 

SS+TF 

Probe-Sample 

Interactions, Nano- 

Manipulation and 

Fabrication 

SP+AS+BI+ET 

+MI+TF 

Emerging 

Instrument 

Formats 

ET+NS+EM 

Electron 

Transport at the 

Nanoscale: 

Nanowires and 

Junctions 

ET+SS+GR+SP 

Electron 


Nanoscale: 

Molecules and 

Defects 

ET+SS+GR+SP 

Electron Transport 

at the Nanoscale: 

Development of 

Theories and 

Techniques 

EL+TF+AS+ 

EM+SS+PS+ 

EN+NM 

Spectroscopic Ellipsometry 

for Photovoltaics 

& Semiconductor 

Mfg. 

EL+TF+BI+AS 

+EM+SS 

Spectroscopic Ellipsometry: 

From 

Organic & Biological 

Systems to Inorganic 

Thin Films 

TR+BI 

Self Healing Coatings, 

Bio-Inspired 

Design, and Frictional 

Properties of 

Biological Materials 

TR 

Molecular 

Origins of 

Friction and 

Wear 

TR+SE 

Tribology and 

Wear of Low- 

Friction 

Coatings and 

Materials 

HI+AS+NS 

Basics of 

Helium Ion 

Microscopy 

HI+AS+BI+NS 

Imaging and 

Lithography 

with the Helium 

Ion Microscope 

AS 

Quantitative 


– Part 1 

AS 

Quantitative 


– Part 2 

AS+BI 

Practical Surface 

Analysis 

AS+BI 

Surface Analysis of Mtls 

w/Vibrational Techniques 

(2:00-3:20pm) / 

Multi-Technique 

Analysis (4:00-6:00 pm) 

AS 

Surface Analysis of 

Biological Mtls 


(8:00-10:00am) / 

3D Imaging – Part 1 

(10:40am-12:00pm) 

AS+NS+SS+TF 

3D Imaging - Part 2 

(2:00-3:20 pm) / 

Advanced Data 

Analysis & Instrument 

Control (4:00-6:00 pm) 

AS 


Large Cluster 

Ion Beams _ 

Part 1 

AS 

Large Cluster Ion Beams - 

Part 2 (2:00-3:20 pm) / 

Surface Analysis w/ 

Synchrotron Techniques 

(3:40-5:40 pm) 

AS+TF+VT 


using 

Synchrotron 

Techniques 

SS 

Nonequillibrium 

and Nonlinear 

Processes 

SS 

Surface 

Dynamics 

SS 

Surface 

Reactivity of 

Oxides 

SS+NS 

Reactivity of 

Size and Shape 

Selected 

Nanoparticles 

SS 

Chemisorption 

on Metallic 

Surfaces 

SS 

Catalysis on 

Metals and 

Alloys 

SS+EN+OX 

Catalysis and 


on Oxides 

SS+NS 


of 


SE+NS 



Coatings I: 

Interface 

Aspects 

SE+NS 



Coatings II: 

Multifunctional 

Properties 

SE+PS 

Pulsed Plasmas 

in Surface 

Engineering 

SE+PS 

Atmospheric 

Pressure 

Plasmas 

SS+OX 

Synthesis and 


of Oxides 

SS+EM 

Semiconductor 

Surfaces 

SS 

Molecular 

Films: Chirality 

& Electronic 

Features 

SS 

Liquid/Surface 

Interactions 

BP+AS 

Biomaterials 

Plenary - 

Bioimaging: In 

Vacuo, In Vitro, 

In Vivo 

BI 

Surfaces to 

Control Cell 

Response 

BI 

Cell-Surface 

Interactions: 

High 

Throughput 

Methodologies 

BI+SS+AS 

Biomolecules at 

Interfaces 

BI+AS 


of Biointerfaces 

BI+SS+NS 

Bio/Nano 

Interfaces with 

Applications in 

Biomedicine and 

Energy 

5 

BN+AS 

Bioimaging 

MB+BI 

Biofilms and 

Biofouling in 

Medicine 

MB+BI 

Marine 

Biofouling 

PS+EM 

Atmospheric 

Plasma 

Processing and 

Micro Plasmas 

PS+BI 

Applications of (Multiphase) 

Atmospheric 

Plasmas (incl. 

Medicine & Bio- 

logical Applications) 

PS1 

Plasma 

Diagnostics, 

Sensors and 

Control 1 

PS1 

Plasma 

Deposition and 

Plasma 

Enhanced ALD 

PS+TC 

Atmospheric 

Plasma Processing 

for PV, Flexible 

Electronics (incl. 

R2R) 

PS1 

Plasma 

Diagnostics, 

Sensors and 

Control 2 

PS1 


for Disruptive 

Technologies 

(NVM, TSV, etc.) 

PS 

Advanced 

FEOL/Gate 

Etching 1 

PS2 

Plasma 

Modeling 

PS2 

Advanced 

FEOL/Gate 

Etching 2 

PS2 

Plasma Surface 

Interaction 

during Plasma 

Etching 

PS 

Advanced 

BEOL/Interconn 

ect Etching 

PS2 


Interactions 

during PECVD 

and Plasma 

Surface 

PS2 

Low Damage 

Processing 

PS 

Plasma Sources 

POSTER 

SESSIONS 

(AS, BI, EL, IS, 

MN, NM, OX, 

SE, SS, TR, VT) 

POSTER 

SESSIONS 

(EM, EN, GR, 

HI, MI, NS, PS, 

TC, TF) 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight

2012 PROGRAM COMMITTEE 

Charles (Chip) R. Eddy, Jr., Program Chair 

University of Florida 

James M. Fitz-Gerald, Vice-Program Chair 

Naval Research Lab. 

AVS Conference Secretary 

Lynn Pizzo 

AVS Event Planner 

Della Miller 

AVS Managing Director/Registration Coordinator 

Yvonne Towse 

AVS Program Editor/Member ServicesAdministrator 

Angela Klink 

Companions Program Coordinator 

Marilyn Ruzic 

Advanced Surface Engineering Division 

Chair: Mitterer, Christian, Univ of Leoben, Austria 

Barankova, Hana, Uppsala University, Sweden 

Broitman, Esteban, Linköping University, Sweden 

Patscheider, Joerg, EMPA, Switzerland 

Robbie, Kevin, Queen's University, Canada 

Voevodin, Andrey, Air Force Research Laboratory 

Applied Surface Science Division 

Chair: Smentkowski, Vincent, GE Global Res Ctr 

Allen, Stephanie, The University of Nottingham, UK 

Artyushkova, Kateryna, University of New Mexico 

Gilmore, Ian, National Physical Laboratory, UK 

Haasch, Richard, U of Illinois at Urbana Champaign 

Herrera-Gomez, Alberto, UAM-Azcapotzalco and 

CINVESTAV-Queretaro, Mexico 

Ohlhausen, James, Sandia National Laboratories 

Pachuta, Steven, 3M Company 

Pugmire, David, Los Alamos National Laboratory 

Roy, Debdulal, National Physical Laboratory, UK, UK 

of Great Britain and Northern Ireland 

Suzer, Sefik, Bilkent University, Turkey 

Szakal, Christopher, NIST 

Walker, Amy, University of Texas at Dallas 

Biomaterial Interfaces Division and 

Biomaterials Plenary Session 

Chair: Alexander, Morgan, Univ of Nottingham, UK 

Belu, Anna, Medtronic, Inc. 

Gamble, Lara, University of Washington 

Hanley, Luke, University of Illinois at Chicago 

Kingshott, Peter, Swinburne Univ of Tech, Australia 

Leggett, Graham, University of Sheffield, UK 

McArthur, Sally, Swinburne Univ of Tech, Australia 

Meagher, Laurence, CSIRO Matls Sci & Eng, Australia 

Reimhult, Erik, BOKU Wien, Austria 

Richter, Ralf, CIC biomaGUNE & MPI for Intelligent 

Systems, Spain 

Rosenhahn, Axel, Karlsruhe Inst of Tech, Germany 

Zauscher, Stefan, Duke University 

Electronic Materials & Processing Division 

Chair: Muscat, Anthony, University of Arizona 

Ayers, John, University of Connecticut 

Conley, John, Oregon State University 

Dietz, Nikolaus, Georgia State University 

Durbin, Steve, University at Buffalo 

Feenstra, Randall, Carnegie Mellon University 

Filler, Michael, Georgia Institute of Technology 

Han, Sang M., University of New Mexico 

Hilton, Jessica, Omicron NanoTechnology, USA 

Hinkle, Christopher, University of Texas at Dallas 

Kim, Hyun Jung, NASA Langley Research Center 

Kim, Jiyoung, The University of Texas at Dallas 

King, Sean, Intel Corporation 

Kummel, Andrew, University of California San Diego 

Linford, Matthew, Brigham Young University 

Liu, Feng, University of Utah 

Mayer, Theresa, Penn State University 

McGuire, Gary, International Technology Center 

Opila, Bob, University of Delaware 

Porter, Lisa M., Carnegie Mellon University 

Sah, Ram Ekwal, Fraunhofer Institute, Germany 

Schultz, Brian, University of California, Santa Barbara 

Tutuc, Emanuel, University of Texas at Austin 

Vitale, Steven, MIT Lincoln Laboratory 

Vogel, Eric, Georgia Institute of Technology 

Williams, Michael, Clark Atlanta University 

Zhang, Enxia, Vanderbilt University 

Zollner, Stefan, New Mexico State University 

Magnetic Interfaces & Nanostructures Division 

Chair: Tobin, James, Lawrence Livermore Natl Lab 

Caruso, Anthony, University of Missouri-Kansas City 

Clavero, César, College of William and Mary 

Fischer, Peter, Lawrence Berkeley National Lab 

Gai, Zheng, Oak Ridge National Laboratory 

Jiang, Sam, Argonne National Laboratory 

Lauter, Valeria, Oak Ridge National Laboratory 

Lukaszew, Rosa Alejandra, College of William and Mary 

Mankey, Gary, University of Alabama 

Mewes, Tim, University of Alabama 

Ohldag, Hendrik, SLAC Natl Accelerator Laboratory 

Pappas, David, NIST 

Szulczewski, Greg, The University of Alabama 

Vescovo, Elio, Brookhaven National Laboratory 

Wolf, Stuart, University of Virginia 

Manufacturing Science & Technology Group 

Chair: Ku, Victor, ASM 

Butler, Stephanie, Texas Instruments 

Diebold, Alain, College of Nanoscale Science and Eng 

Liu, Brian, AIXTRON Inc. 

Murday, James, University of Southern California 

Rogers, Bridget R., Vanderbilt University 

Rowe, Jack, North Carolina State University 

Rubloff, Gary, University of Maryland 

Seebauer, Edmund, Univ of Illinois Urbana Champaign 

MEMS and NEMS Group 

Chair: Ilic, Rob, Cornell University 

Co-Chair: Metzler, Meredith, Cornell University 

Blain, Matthew, Sandia National Laboratories 

Burkett, Susan, The University of Alabama 

Dhayal, Marshal, CSIR Cent for Cellular and Molecular 

Biology (CCMB), India 

Ghodssi, Reza, University of Maryland, College Park 

Gousev, Evgeni, Qualcomm 

Hiebert, Wayne, University of Alberta and National Institute 

for Nanotechnology, Canada 

Kotru, Sushma, The University of Alabama 

Krylov, Slava, Tel Aviv University, Israel 

Sumant, Anirudha, Argonne National Laboratory 

Tian, Wei-Cheng, National Taiwan University 

Zorman, Christian, Case Western Reserve University 

Nanometer-scale Science & Tech Division 

Chair: Hersam, Mark, Northwestern University 

Borovsky, Brian P., St. Olaf College 

Burnham, Nancy, Worcester Polytechnic Institute 

Camillone, Nicholas, Brookhaven National Laboratory 

Chiang, Shirley, University of California, Davis 

Herman, Gregory, Oregon State University 

Hines, Melissa, Cornell University 

Krim, Jacqueline, North Carolina State University 

LaBella, Vincent, University at Albany-SUNY 

Schwarz, Udo, Yale University 

Sheehan, Paul, U.S. Naval Research Laboratory 

Wei, David, University of Florida 

6 

Plasma Science & Technology Division 

Chair: van de Sanden, Richard, Eindhoven University 

of Technology, Netherlands 

Co-Chair: Wolden, Colin, Colorado School of Mines 

Agarwal, Ankur, Applied Materials Inc. 

Agarwal, Sumit, Colorado School of Mines 

Booth, Jean-Paul, LPP-CNRS, Ecole Polytechnique, 

France 

Hamaguchi, Satoshi, Osaka University, Japan 

Joseph, Eric, IBM T.J. Watson Research Center 

Sankaran, Mohan, Case Western Reserve University 

Shannon, Steven, North Carolina State University 

Tatsumi, Tetsuya, Sony Corporation, Japan 

Tay, Sing-Pin, Mattson Technology 

Vitale, Steven, MIT Lincoln Laboratory 

Yeom, Geun Young, Sungkyunkwan University, Korea 

Surface Science Division 

Chair: Millunchick, Joanna, University of Michigan 

Besenbacher, Flemming, Aarhus University, Denmark 

Fisher, Galen, University of Michigan 

Hines, Melissa, Cornell University 

Hirschmugl, Carol, Univ of Wisconsin Milwaukee 

Kimmel, Greg, Pacific Northwest National Laboratory 

Reutt-Robey, Janice, University of Maryland 

Utz, Arthur, Tufts University 

Thin Film Division 

Chair: Karabacak, Tansel, Univ of Arkansas Little Rock 

Co-Chair: Rieth, Loren, University of Utah 

Chopra, Nitin, The University of Alabama 

Creatore, Mariadriana, Eindhoven U of Technology, Netherlands 

Davidson, Mark, University of Florida 

Davis, Robert, Brigham Young University 

Fitz-Gerald, James, University of Virginia 

George, Steven, University of Colorado, Boulder 

Ghosh, Avik, University of Virginia 

Grubbs, Robert, Sandia National Laboratories 

Gupta, Subhadra, The University of Alabama 

Irving, Douglas, North Carolina State University 

Jur, Jesse, North Carolina State University 

Kessels, Erwin, Eindhoven U of Technology, Netherlands 

Kim, Hyungjun, Yonsei University, Korea 

Knez, Mato, Max-Planck-Inst Mikrostrukturphysik, Germany 

Lewis, Jay, RTI International 

Linford, Matthew, Brigham Young University 

Muscat, Anthony, University of Arizona 

Parsons, Gregory, North Carolina State University 

Rack, Phillip, University of Tennessee Knoxville 

Rossnagel, Stephen, IBM T.J. Watson Research Center 

Vallee, Christophe, LTM - MINATEC - CEA/LETI, France 

Willey, Trevor, Lawrence Livermore National Laboratory 

Vacuum Technology Division 

Chair: Stutzman, Marcy, TJ Natl Accelerator Facility 

Co-Chair: Thornberg, Steve, Retired, formerly SNL 

Arnold, Paul, BrooksAutomation, Granville-Phillips Products 

Baker, Douglas, Teledyne Hastings 

Brucker,Gerardo,BrooksAutomation,Granville-PhillipsProducts 

Fedchak, James, NIST 

Garcia, Bob, SAES Getters 

Hendricks, Jay, NIST 

Li, Yulin, Cornell University 

Peacock, Neil, MKS Instruments 

Rutherford, Sherm, Duniway Stockroom 

Smart, Loralie, Brookhaven National Laboratory 

Versluis, Richard, TNO Science and Industry, Netherlands 

Wang, Lily, Los Alamos National Laboratory 

Wuest, Martin, INFICON Ltd, Liechtenstein 

Actinides and Rare Earths Focus Topic 

Chair: Tobin, James, Lawrence Livermore Natl Lab 

Aydil, Eray S., University of Minnesota

Durakiewicz, Tomasz, Los Alamos National Laboratory 


Havela, Ladislav, Charles University, Czech Republic 

Karabacak, Tansel, Univ of Arkansas at Little Rock 

Millunchik, Joanna, University of Michigan 

Oppeneer, Peter M., Uppsala University, Sweden 

Petit, Leon, Daresbury Laboratory, UK 

Shuh, David, Lawrence Berkeley National Laboratory 

Biofilms and Biofouling: Marine Energy 

Focus Topic 

Chair: McArthur, Sally, Swinburne U of Tech, Australia 

Co-Chair: Hanley, Luke, Univ of Illinois at Chicago 

Barlow, Daniel, Naval Research Laboratory 

Rosenhahn, Axel, Karlsruhe Inst of Tech, Germany 

Biointerphases: Bioimaging Focus Topic 

Co-Chair: Gamble, Lara, University of Washington 

Co-Chair: Grunze, Michael, U of Heidelberg, Germany 

Alexander, Morgan, University of Nottingham, UK 

Gilmore, Ian, National Physical Laboratory, UK 

Electron Transport at the Nanoscale 

Focus Topic 

Chair: Li, An-Ping, Oak Ridge National Laboratory 

Allen, Stephanie, The University of Nottingham, UK 

First, Phillip, Georgia Institute of Technology 

Su, Chanming, Bruker Nano 

Wendelken, John, Oak Ridge National Laboratory 

Energy Frontiers Focus Topic 

Co-Chair: Aydil, Eray S., University of Minnesota 

Co-Chair: Filler, Michael, Georgia Institute of Techn 

Co-Chair: McWhorter, Scott, DOE-EERE 

Hersam, Mark, Northwestern University 

Karabacak, Tansel, Univ of Arkansas at Little Rock 

Lewis III, John, Army Research Office 


Rieth, Loren, University of Utah 

Smentkowski, Vincent, GE Global Research Center 

Tobin, James, Lawrence Livermore National Lab 

van de Sanden, Richard, Eindhoven U of Technology, 

Netherlands 

2012 PROGRAM COMMITTEE 

Graphene and Related Materials Focus Topic 

Chair: Oleynik, Ivan, University of South Florida 

Batzill, Matthias, University of South Florida 

Chabal, Yves, University of Texas at Dallas 

Diebold, Alain, College of Nanoscale Science and Eng 

Feenstra, Randall, Carnegie Mellon University 

Gaskill, D. Kurt, U.S. Naval Research Laboratory 

Ghosh, Avik, University of Virginia 

Gölzhäuser, Armin, University of Bielefeld, Germany 

Jernigan, Glenn, Naval Research Laboratory 

Ohldag, Hendrik, SLAC National Accelerator Lab 

Schnieders, Albert, CNM Technologies GmbH 

Sheehan, Paul, U.S. Naval Research Laboratory 

Spencer, Mike, Cornell University 

Helium Ion Microscopy Focus Topic 

Chair: Gölzhäuser, Armin, Univ of Bielefeld, Germany 


In Situ Microscopy and Spectroscopy 

Focus Topic 

Chair: Artyushkova, Kateryna, Univ of New Mexico 


Baddorf, Arthur, Oak Ridge National Laboratory 

Cumings, John, University of Maryland 


Nanomanufacturing Science &Technology 

Focus Topic 

Chair: Rogers, Bridget R., Vanderbilt University 

Co-Chair: Madsen, Lynnette, Natl Science Foundation 

Gamble, Lara, University of Washington 

Ku, Victor, ASM 

Walker, Amy, University of Texas at Dallas 

Oxide Heterostructure-Interface Form and 

Function Focus Topic 

Chair: Altman, Eric, Yale University 

Engelhard, Mark, EMSL, Environmental Molecular 

Sciences Laboratory 


Vallee, Christophe, LTM - MINATEC - CEA/LETI, 

France 

2012 OFFICERS AND DIRECTORS 

PRESIDENT PRESIDENT-ELECT 

Alison A. Baski Susan B. Sinnott 

Virginia Commonwealth University University of Florida 

Physics Dept. 154 Rhines Hall 

701 W. Grace Street Dept. of Materials Science & Eng. 

Richmond, VA 23284-2000 Gainesville, FL 32611 

Tel: 804-828-8295 Tel: 352-846-3778 

Fax: 804-828-7073 Fax: 804-846-3355 

Email: alison_baski@avs.org Email: susan_sinnott@avs.org 

Scanning Probe Microscopy Focus Topic 

Chair: Allen, Stephanie, University of Nottingham, UK 

Belu, Anna, Medtronic, Inc. 

Burnham, Nancy, Worcester Polytechnic Institute 


Li, An-Ping, Oak Ridge National Laboratory 


Spectroscopic Ellipsometry Focus Topic 

Chair: Creatore, Mariadriana, Eindhoven University of 

Technology, Netherlands 


Hilfiker, James, J.A. Woollam Co., Inc. 


Muscat, Anthony, University of Arizona 

Rogers, Bridget R., Vanderbilt University 


van de Sanden, Richard, Eindhoven University of 

Technology, Netherlands 

Wagner, Matthew, The Procter & Gamble Company 

Wormeester, Herbert, MESA+ Institute for Nanotechnology, 

U of Twente, Enschede, Netherlands 

Transparent Conductors and Printable 

Electronics Focus Topic 

Chair: Porter, Lisa M., Carnegie Mellon University 

Aydil, Eray S., University of Minnesota 

Coutts, Timothy, Timothy J. Coutts Consulting, Inc. / 

Emeritus Fellow, NREL 

Durbin, Steve, University at Buffalo 

Haasch, Richard, U of Illinois at Urbana Champaign 

Herman, Gregory, Oregon State University 

Tribology Focus Topic 

Chair: Sinnott, Susan, University of Florida 

Burris, David, University of Delaware 

Irving, Douglas, North Carolina State University 

Mitterer, Christian, University of Leoben, Austria 

Zauscher, Stefan, Duke University 

Exhibitor Technology Spotlight 

Co-Chair: DeGennaro, J., AVS 

Joe Greene, Clerk Jane P. Chang, Director Lars G. Hultman, Director 

University of Illinois, Urbana-Champaign University of California, Los Angeles Linkoping University 

Stephen M. Rossnagel, Treasurer Steven M. George, Director Gregory N. Parsons, Director 

IBM T.J. Watson Research Center University of Colorado North Carolina State University 

Angus A. Rockett, Immediate Past-President Ian Gilmore, Director David Surman, Director 

University of Illinois National Physical Laboratory Kratos Analytical, Inc. 

7

Symposium Registration 

Procedures 

(See page 3 for form) 

We strongly encourage you to pre-register 

using our on-line registration program 

(www.avs.org), which will ensure faster 

confirmation. Those of you wishing to register 

via mail or fax may complete the 

form on page 3 and send it to the address 

listed below to be received no later than 

October 8, 2012: 

AVS 

c/o Experient 

P.O. Box 4088 

Frederick, MA 21705 

Fax: 301-694-5124 

GENERAL INFORMATION 

All pre-registered attendees will collect 

their badge, tickets, and other materials 

when they report to the AVS-59 Registration 

Area at the Tampa Convention Center. 

You will use the Pre-Registration terminals 

to generate your badge and collect 

your materials from the Print Station. 

All registrants must have their badge and 

badgeholder to gain admission to the technical 

sessions and exhibition. 

Symposium Registration 

Cancellation Policy 

All Symposium cancellation/refund requests 

must be submitted by Monday, October 22, 

2012 in writing to: 

Yvonne Towse, Registration Coordinator 

AVS 



Fax: 212-248-0245 

Email: yvonne@avs.org 

Cancellations and refunds will be processed 

after the close of the show. All refunds will 

be issued in the form of a check and will be 

assessed a $25 cancellation fee 

OTHER CONDITIONS 

You will be charged for all registrations 

received. 

•A $20 fee will be charged for all returned 

checks. 

•No Purchase Orders will be accepted. 

All registration fees are NON-TRANS- 

FERABLE. 

•No one under the age of 12 (including 

infants and toddlers) will be permitted on 

the show floor. 

Symposium Lost Badge Policy 

Please note that we will be imposing a $20 

fee for replacement badges so please 

remember to bring your badge and keep it 

in a safe place throughout the week. 

JVST Manuscript Publication 

Information 

Authors are invited to submit an article to 

JVST A or B on their presentation/poster 

topic given at the AVS International Symposium. 

Articles can be submitted anytime 

between the abstract submission deadline 

and the end of the year. Please indicate in 

the cover letter that the article is based on a 

talk or poster given at the AVS Symposium. 

Papers can be submitted to JVST A or JVST 

B depending on the topic. You can find easy 

to use templates and instructions for authors 

on the journal home pages 

http://avspublications.org/jvsta or 

http://avspublications. org/jvstb. Please submit 

your JVST A & B articles at 

http://jvsta.peerx-press.org or at 

http://jvstb.peerx-press.org for JVST A & B 

respectively. 

8 

For more information, stop by the AVS Publications 

Booth 728 in the Exhibit Hall during 

the week of the Symposium or contact: 

Nancy Schultheis 

AVS Publications Office 

Caller Box 13994 

100 Park Drive, Suite 105 

Research Triangle Park, NC 27709 

919-361-2787 Fax: 919-361-1378 

Email: publications@avs.org 

AVS Membership 

Renewal Feature 

The 2013 membership renewal dues will 

be included within the symposium registration 

fees for all Full, Student, Early 

Career, Honorary, and Emeritus members. 

No further action will be required and 

2013 membership will take effect on January 

1, 2013. Any questions, see Angela 

Klink at the AVS Store (Booth 733) or via 

email (angela@avs.org) 

Complimentary AVS 

Membership Offer 

If you have paid the Full, Student, or Early 

Career non-member registration fee, you 

will receive a complimentary AVS electronic 

membership for 2013. If you wish to receive 

a JVST print subscription you must pay any 

additional fees. For more information, stop 

by AVS Booth 733 in the Exhibit Hall during 

the week of the Symposium or contact: 

Angela Klink 

AVS 



212-248-0200 X221 Fax: 212-48-0245 

Email: membership@avs.org

Recording Equipment Policy 

The use of video recording equipment, 

cameras, or audio equipment at any AVS 

International Symposium and Exhibition, 

or Short Course is prohibited without prior 

written approval of AVS. 

Anyone in violation of these policies will 

be removed from the premises immediately. 

AVS reserves the right to reproduce, by 

any means selected, any or all of these 

presentations and materials. 

Internet Access 

E-mail Pavilion–Booth 223 

AVS will be sponsoring internet access in 

the Exhibition Hall at the Convention 

Center from Tuesday-Thursday. Attendees 

are welcome to use the computers provided 

in the Exhibit Hall E-mail Pavilion/ 

Booth 223 (generously sponsored by 

SPECS Surface Nano Analysis, Inc.). 

Attendees can also log in directly using 

their own laptops at various wireless spots 

marked throughout the Exhibit Hall. 

The Tampa Marriott Waterside Hotel & 

Marina (AVS headquarters hotel) offers 

complimentary wireless in the lobby and 

public areas. 

Securing Visas 

International Attendees: Due to increasing 

delays in securing visas to the U.S. it is 

strongly encouraged that prospective international 

attendees begin this process as 

early as possible to ensure approval. Please 

refer to the following website for additional 

information and assistance: 

http://www.national-academies.org/visas 

You may also contact Yvonne Towse 

(yvonne@avs.org) for additional assistance. 

Additional Notes 

• AVS will be providing PCs in all session 

rooms in addition to switchboxes which 

should allow for a quick and easy transition 

between presentations. All authors are 

encouraged to visit the Presenters Preview 

Room 1 to test the equipment prior to their 

presentation. 

• AVS will not publish an Abstract Book 

All abstracts, as well as a personal scheduler, 

have been available on our website since 

early July. Computer terminals with a program 

link will be available on the second 

level of the Convention Center should 

you need to reference any abstracts during 

the week. 

Exciting 2012 Events 

Welcome Mixer for 

Attendees & Exhibitors 

Will take place on Monday from 5:30 

p.m.–7:30 p.m. on the Riverwalk of the 

Tampa Convention Center. The Mixer is 

a casual gathering where attendees and 

exhibitors can enjoy some refreshments 

and spend time together prior to the opening 

of the Exhibit Hall. 

AVS Membership Booth and Store 

Booth 733 

Browse through AVS Educational materials 

(books, training DVDs and monographs); 

trinkets, souvenirs and logo items. Learn 

about the advantages and benefits of AVS 

membership and find out how to get more 

involved in AVS events and activities in 

Booth 733 in the Exhibit Hall. 

AVS Career Center Booth 733 

Looking for a position or seeking qualified 

candidates for a job opening? If so, please 

register at the AVS Career Center located 

in the Exhibit Hall in Booth 733. 

AVS Publications Booth 728 

Come meet with the AVS journal editors, 

find out how to submit a manuscript and 

learn about exciting developments in all 

AVS journals. 

Art Zone Booth 222 

See the entries in the 2012 art and pumpkin 

contests and vote for your favorites. 

Winners will take home cash prizes! Generously 

sponsored by Kurt J. Lesker. To 

enter the contest, stop by the Staff 

Office (Room 3) for further information. 

Exhibit Hall Refreshment Breaks 

Visit the Exhibit Hall during the morning 

and afternoon technical session breaks. 

There will always be something special 

being offered in the Hall. 

Complimentary Lunches 

in the Exhibit Hall 

Attendees who pay for a full week registration 

(Full, Student, Early Career, and 

Exhibitors) will receive two free lunch 

vouchers redeem-able on Tuesday and 

Wednesday for lunch concessions located 

in the Exhibit Hall. Stop by the Exhibit 

Hall between 12:00– 2:00 p.m. to grab a 

bite to eat and network with exhibitors and 

fellow colleagues. Come to the Exhibit 

Finale on Thursday for free lunch for all 

(no tickets required). 

9 

AVS Raffle Zone Booth 733 

Be sure to enter your raffle tickets to participate 

in the daily raffles being held 

Tuesday–Thursday in the Exhibit Hall 

Raffle Zone Booth 733! Thanks to our 

generous sponsors we have some really 

exciting prizes this year. 

Ask The Experts Booth 528 

The AVS Vacuum Technology Division 

and Duniway Stockroom, SAES Getters 

and Brooks Automation are sponsoring an 

Ask The Experts (ATE) booth which will 

offer a special open forum to discuss and 

help solve vacuum related issues. Are you 

experiencing: Puttering Pumps? Garbled 

Gauges? Spurious Species? Come and Ask 

the Experts! 

Students and Early Career Members 

• On Sunday evening there will be a free 

workshop on Skills for a Successful Industrial 

Career. Come and learn what is 

important to industry today. 

• On Monday afternoon there will be a 

JVST Writer’s Workshop held during the 

last half of the lunch break to provide 

guidance and insight on the publishing 

process for AVS Student and Early Career 

Members. 

• On Monday evening there will be a 

special Professional Development session 

entitled “Town Hall Meeting: Federal 

Funding & Research Opportunities”, 

featuring program managers from several 

U.S. government agencies. 

• The Job Information Forum, which provides 

an opportunity to learn from the 

career experiences of young industrial, 

academic and national lab professionals, 

will again be held on Tuesday during 

lunch. 

AVS Companion Tours 

AVS offers tours of Tampa and the surrounding 

area for your enjoyment. For 

additional information, contact Marilyn 

Ruzic, Tour Coordinator, companiontours 

@avs.org or visit www.avs.org. 

Free Caricature 

Visit Booth 301 (Kratos Analytical) to get 

your ticket validated for a free caricature 

in the special event booth. 

Free Massage 

Visit Booth 300 (Vacuum Research Corp.) 

in the Exhibit Hall to get your ticket validated 

for a free massage!

GENERAL INFORMATION 

Hotel Reservations 

AVS is pleased to offer special rates at two 

Nashville hotels—Tampa Marriot Waterside 

Hotel & Marina (Headquarters) and 

the Embassy Suites Tampa Downtown. 

Keep in mind that reserving a room in this 

convention block helps AVS meet its 

financial commitments to the host city and 

retain lower registration fees as well as a 

high quality conference with the features 

and services you are accustomed too. To 

make these properties more attractive, 

AVS will be offering several incentives for 

you to book your stay—watch for these 

specials from July–September. 

Reservations 

Opens: July 9, 2012 

Closes: October 5, 2012 

By Web 

http://registration3.experientinc.com/ 

showAVS121/ 

By email 

experient-inc.com 

By phone 

847-282-2529 

Cancellation Policy 

Cancellation Policy: All reservation cancellations 

must be received by the AVS 

Housing Bureau by October 5, 2012. If 

you need to cancel after October 5, 2012, 

you must do so directly with the hotel and 

provide a 72 hour notice to avoid being 

charged one night's room and tax. 

Climate 

Tampa’s weather is a combination of 

bright sunny days tempered by gentle bay 

breezes. In the fall, the days are pleasantly 

warm, while the evenings can be a bit 

cooler. The average annual temperature in 

Tampa is a comfortable 73 degrees. Loose, 

lightly colored clothing is recommended 

for daytime activities; a lightweight jacket 

or sweater is a good choice for the 

evening, especially for activities on or near 

the water. Sunscreen rated SPF 15 or higher 

is also a must for visitors of all ages. 

Rates, Parking and Directions 

Tampa Marriott Waterside Hotel and 

Marina Hotel (Headquarters) 

700 South Florida Ave 

Tampa, FL 33602 

Single/Double: $187* 

Parking: $20 overnight valet $13; $13 

daily valet 

*Government Rates Available 

From Tampa International Airport (TPA) 

to Marriott (8 Miles): 

• Exit Tampa International Airport 

• Merge onto I-275 North (towards Tampa) 

• Exit onto North Ashley Drive 

• Turn left onto E. Whiting Street 

• Turn right onto S. Franklin Street 

• Turn left on Old Water St. Hotel is on the right 

Embassy Suites 

Tampa Downtown Hotel 

513 South Florida Ave 


Single/Double: $187 

Parking: $20 overnight valet parking 

From Tampa International Airport (TPA) 

to Embassy Suites (7 Miles): 

• Exit Tampa International Airport 

• Merge onto I-275 North (towards Tampa) 

• Exit onto North Ashley Drive 

• Turn left onto E. Whiting Street 

• Turn right onto S. Franklin Street 

• Turn left onto Channelside Drive 

• Turn right onto S. Florida 

Airport 

Tampa International Airport (TPA) 

Centrally located, Tampa International 

Airport is just seven miles west of downtown 

Tampa. On an average day, the airport 

is home to more than 100,000 visitors. 

Tampa International Airport offers 273 

daily nonstop scheduled departures to 68 

domestic destinations and 42 weekly nonstop 

scheduled departures to five international 

markets. The efficient layout of the 

airport eliminates hassles and delays, 

ensuring swift and comfortable movement 

for passengers. 

Ground Transportation from the airport 

Taxi Ride: $25 each direction. 

Shuttle Ride: $12-$15 each directions. 

10 

2013 Symposium Suggestions 

We hope that you will be satisfied and 

well-served by the content and activities of 

the 59th International Symposium of AVS 

whether your main interests lie in the technical 

sessions, short courses, equipment 

exhibition, or special events and functions 

which are scheduled throughout the week. 

The AVS Program Committee strives to 

ensure that the International Symposium 

meets the needs of its membership and the 

larger community which utilizes all 

aspects of vacuum science and technology. 

To assist the Committee in meeting this 

objective for next year’s symposium, 

suggestions for improvement in any aspect 

should be directed to the Program 

Committee Chair: 

James Fitz-Gerald, University of Virginia, 

Wilsdorf Hall, #226, 395 McCormick 

Road, Charlottesville, VA 22904-474, 

jim_fitz-gerald@avs.org 

Help us to serve you better! 

AVS 60 th International Symposium 

LONG BEACH CONVENTION CENTER 

LONG BEACH, CALIFORNIA 

OCTOBER 27–NOVEMBER 1, 2013

AVS 

Membership. 

Expands Your Network 

• Form valuable contacts in academia, industry, 

and government 

• Colaborate with engineers, physicists, chemists, 

mathematicians, and biologists al working in 

materials, interfaces, and processing 

Enhances Your Scientific 

and Professional Knowledge 

• International Symposia & Exhibitions and Topical 

Conferences (discounts available) 

• Local Chapter Activities and Meetings 

• Publications and Technical Resources (Free 

Subscriptions to JVST A & B (plus no page charges), 

Physics Today, and the AVS Newsleter) 

• Professional Development Training and Workshops 

(discounts available) 

Provides Opportunities to 

Develop and Practice Your 

Leadership Skils 

• Lead or volunteer on a local, national, or 

international commitee or division 

• Develop symposia programming 

• Serve as an AVS Director or Oficer 

• Participate in advocacy programs 

Offers Discounts on Subscriptions, Meeting Attendance, 

Hotels, Insurance, and Much More 

Ful week atendees of the AVS International 

Symposium automaticaly receive ful AVS 

Membership for the next calendar year. 

Stop by the Membership Booth 733 for more 

information. 

AVS is a volunteer-driven, technical society comprised of academic, industrial, 

government, and consulting professionals involved in a variety of disciplines – 

chemistry, physics, biology, mathematics, al engineering disciplines, business, 

and sales – through common interests related to the basic science, technology 

development, and commercialization of materials, interfaces, and processing. 

Hours & Schedule 

Tuesday 10 a.m. - 5:30 p.m. Exhibit Hal Booth 733 

Wednesday 10 a.m. - 4:30 p.m. Exhibit Hal Booth 733 

Thursday 10 a.m. - 2:00 p.m. Exhibit Hal Booth 733 

AVS 

212-248-0200 

avsnyc@avs.org 

www.avs.org

TAMPA MARRIOTT WATERSIDE 

HOTEL AND MARINA 

12

UPPER LEVEL 

LOWER LEVEL 

TAMPA CONVENTION CENTER 

13

SPECIAL SESSIONS/WORKSHOPS 

Nanomanufacturing: Current Status and Future Prospects 

Sunday, October 28, 2012, 1:00–5:00 p.m., Room 16, Tampa Convention Center 

Alexander Liddle, Nanofabrication and Nanomanufacturing Group, 

Center for Nanoscale Science and Technology, NIST 

This tutorial will provide an introduction to nanomanufacturing. The tutorial begins by drawing the distinction between 

nanofabrication—the technology for making small things—and nanomanufacturing—the application of nanofabrication 

technologies to making money. This is followed by a discussion of the characteristics required of a nanomanufacturing 

process in terms of throughput, precision and defectivity, as it relates to the type and functionality of nanostructures being made. 

Next, specific examples are considered, with a detailed examination of the integrated circuit fabrication process and those 

factors that have led to it becoming the most successful current nanomanufacturing industry. This will serve as a baseline 

against which to compare and contrast new and emerging nanomanufacturing processes and applications ranging from 

nanocomposites to DNA self-assembly to tip-based, single-atom manipulation to nanoparticle drug delivery systems to 

optical metamaterials. Finally, nanomanufacturing complexity is considered in terms of product functionality and cost. 

The cost for attending this tutorial is $100 or $75 (students/early career). 

14 th Topical Conference on Quantitative Surface Analysis (QSA 14) 

Sunday, October 28, 2012, 7:30 a.m.-4:00 p.m., Room 20, Tampa Convention Center 

Theme: 2D and 3D Nanomaterials Analysis 

This Topical Conference will provide a forum for discussion on the quantitative aspects of surface analysis and on surface, 

interface and thin-film characterization, including high spatial resolution. The program will consist of invited presentations. 

Each invited paper will be followed by an extended discussion period. QSA 14 will be a one day conference and the 

cost for full attendees is $115 and the cost for students is $70 (includes breakfast, lunch, two breaks, and lively discussions). 

This small topical meeting has proven to be useful to students and others new to quantitative surface analysis and 

for more experienced researchers to see the current state of the art in a variety of methods. 

Biomaterial Interfaces Division Plenary Session 

Sunday, October 28, 2012, 4:00–6:00 p.m., Room 23, Tampa Convention Center, followed by a reception 

The Biomaterial Interfaces and Applied Surface Science Divisions come together for the traditional Biomaterials Plenary 

(BP), which this year is themed Bioimaging: in vacuo, in vitro, in vivo. In this Plenary Session we will explore the challenges 

involved with imaging of cells, tissues and the biochemical processes contained within. We bring together international 

leaders in their areas to present the latest advances and discuss future opportunities, including Stefan Hell 

“Nanoscopy with focused light”, Gerd Schneider “3-D view into cells by X-ray nano-tomography” and DaeWon Moon 

“NanoBio Imaging for New Biomedical Applications”. 

Surface Science Morton M. Traum Presentation 

Thursday, November 1, 2012, 12:00 Noon, Room 22, Tampa Convention Center 

The Tuesday Evening Poster Session features presentations by the five Mort Traum Student Award Finalists. The Morton 

M. Traum Surface Science Student Award will be presented for the best student poster presented in the poster session 

sponsored by the Surface Science (SS) Division at the AVS International Symposia. The 2012 Winner wil be 

announced in the Traum Student Award Ceremony, to be held Thursday at noon immediately following SS-ThM in Room 22. 

14

SPECIAL SESSIONS/WORKSHOPS 

Electronic Materials and Processing Division Industrial Forums 

The Electronic Materials and Processing Division (EMPD) will host two industrial forums for those interested in learning 

about career opportunities in the semiconductor industry. These talks are aimed at introducing graduate students and postdoctoral 

researchers to some of the technical hurdles that the industry faces. Following the talks, there will be a question 

and answer period as well as informal discussions with the presenters. Dr. Gary McGuire will moderate both forums. 

Careers at Lam Research 

Monday, October 29, 2012, 5:30 p.m., Room 9, Tampa Convention Center 

Sponsored by Lam Research Corporation. Following a session on high-k dielectrics for MOSFETs, this forum will provide 

an open dialogue between an industrial liaison and young scientists and engineers. Dr. Joydeep Guha will describe Lam 

Research Corporation, its technical thrusts as well as challenges, its products, future direction, and career opportunities. 

Moore’s Law and Careers at Intel 

Tuesday, October 30, 2012, 6:20 p.m., immediately following the EMPD Business Meeting, Room 9, 

Tampa Convention Center 

Sponsored by Intel Corporation. In 1965, Intel co-founder Gordon Moore declared that the number of transistors on a chip 

would double roughly every two years. Four decades later, the silicon microelectronics industry has turned this prediction 

into a maxim that has helped bring the world products that have changed the way we live, work and play. However, many 

have questioned whether the aggressive trend dictated by “Moore’s Law” can continue to be sustained. Dr. Sean King 

joined Intel in 1997 and is currently a Senior Technical Contributor and Process Development Engineer in Intel’s Portland 

Technology Development (PTD) Division. Dr. King’s talk will illustrate that while the future is not crystal clear, numerous 

paths exist to extend Moore’s Law for several more decades. Dr. King will further highlight Intel’s silicon technology 

leadership and career opportunities at the world’s largest semiconductor manufacturer. 

ASTM-E42/ASSD Workshop: 

“XPS and Beyond: ISS, UPS, HIM, APT and other TLAs (Three Letter Acronyms)” 

Tuesday, October 30, 2012, 7:30 p.m., Florida Ballroom V, Tampa Marriott Waterside Hotel 

The ASSD business meeting will be followed by capsule presentations by the ASSD’s two Student Award candidates: 

William Roach from The College of William and Mary and Tyler Kent from the University of California, San Diego. We 

will end the night with the annual workshop which is hosted by the ASTM E42 Committee on Surface Analysis and the 

ASSD. The annual workshop focuses on a timely topic of interest to the surface analysis community. The Workshop is 

intended to improve the quality of utilization of surface analysis tools, in an engaging and informal atmosphere. The discussion 

is generally quite lively and much useful information generally shared. Snacks and drinks are provided at no cost. 

Speakers: 

Chuck Bryson: “An Exercise in Optimizing an XPS System for Applications that has Lead to a Very Small 

Instrument that can be Extended to High-Pressure Applications” 

David Joy: “HIM - Microscopy Done Right” 

Emmanuelle Marquis: “All You Wanted to Know about APT” 

The night will end with an open discussion on standards needs in less utilized and emerging analytical techniques. 

15

PROFESSIONAL LEADERSHIP 

Free Workshop: 

Skills for a Successful Industrial Career 

Sponsored By: AVS Professional Leadership Committee, Nanomanufacturing Focus Topic, & MSTG 

Sunday, October 28, 2012, 6:00-8:00 PM 

Room 16, Tampa Convention Center 

• Is my academic program properly preparing me for a successful industrial career? 

• What skills should I be attaining and honing to progress in an industrial career? 

• What do industry employers look for in a new employee? 

• Is publishing a few papers and completing my degree enough to get the job I want? 

These and many other topics will be discussed during this two-hour workshop led by Dr. Stephanie Watts Butler and 

Dr. Erik Svedberg. 

Stephanie Watts Butler, Innovation Manager, Power Supply Solutions Business Unit, 

Texas Instruments 

Dr. Butler is a recognized expert on managing the development of highly technical and complicated 

innovation. Throughout her 29-year career in the semiconductor industry, Dr. Butler has worked 

in silicon wafer manufacturing, silicon technology development, packaging development, control 

system development, sensor development, magnetic tape head processing, R&D Management, and 

Integrated Circuit new product development. She has served as a Strategic Program Manager 

appointed by the CTO and VPs to lead major across-organizational initiatives. 

Erik Svedberg, Senior Program Director, National Materials and Manufacturing Board, 

National Academies 

Dr. Svedberg has a decade of industry experience with both small and large companies (10 and 

50,000 employees) in the materials science area and has also been a guest researcher at NIST for 

several years. Dr. Svedberg currently works with experts from across the nation to develop, negotiate, 

and oversee scientific and technical advisory studies that investigate issues of materials science, 

manufacturing and engineering design. He has been awarded and overseen several research grants 

and has published over 80 scientific articles which have been cited over 500 times, holds two patents, 

and has started his own company. 

Everyone is welcome to join the discussion! 

Come share your questions, add your insight, learn what is important 

to industry today, and network with industry-minded colleagues. 

16

PROFESSIONAL LEADERSHIP 

TOWNHALL MEETING: Federal Funding & Research Opportunities 

7:00 p.m.–8:45 p.m., Florida Ballroom V, Tampa Marriott Waterside Hotel & Marina 

Monday, October 29, 2012 

Open to ALL Symposium Attendees Refreshments Provided 

Welcome: Dr. Lynnette D. Madsen, National Science Foundation (NSF) 

Briefings from Agencies (25 minutes each) with Q&A after each presentation 

Materials Research Trends and Opportunities in the USA and Abroad: 

A National Science Foundation Perspective 

Speaker: Dr. Lynnette D. Madsen, lmadsen@nsf.gov, (703) 292-4936 

Agency Responsibilities: She has served as the Program Director for Ceramics at the NSF within the 

Division of Materials Research since 2000. In addition to recommending the distribution of the 

Ceramics Program budget (now ~$11M), Dr. Madsen has additional responsibilities in materials 

research, nanomanufacturing, cultural heritage science (CHS), cooperation with the National Institute 

of Standards and Technology (NIST), international activities (Materials World Network (MWN)), 

and broadening participation. 

AVS Involvement: She attended her 1st AVS short course in 1986 and ran her 1st AVS 5k race in 

1988. Now, she regularly attends the annual meeting. She co-chairs the Nanomanufacturing Focus 

Topic and serves on the Professional Leadership, Membership, and Governance Committees. 

National Institutes of Health (NIH)& the Role of Physical Sciences in Cancer Research 

Speaker: Dr.Larry A. Nagahara, larry.nagahara@nih.gov, (301) 451-3388 

Agency Responsibilities: Dr. Nagahara is Acting Director of the Office of Physical Sciences-Oncology 

in the Center for Strategic Scientific Initiatives (CSSI), National Cancer Institute (NCI), where he 

coordinates and directs program and research activities related to expanding the role of the physical 

sciences in cancer research, including the Physical Sciences-Oncology Centers (PS-OC) Program. 

Dr. Nagahara also currently represents NCI on the Trans-NIH Nano Task Force, which is tasked to 

develop NIH-wide scientific and policy vision for nanotechnology was an NCI’s Project Scientist for 

the NIH’s Nanomedicine Development Centers and NIH’s Genes and Environment Initiative (GEI), 

Exposure Biology Program. 

AVS Involvement: His ties to the AVS are from a while ago. During the late 80’s and early 90’s, he went to many AVS 

sponsored events, including a local chapter in AZ. Most of these were the annual AVS Meeting and the scanning probe meetings/ 

nanoscience meetings. 

17

STUDENT/EARLY CAREER FUNCTIONS 

JVST Writer’s Workshop 

Monday, October 28, 2012, 1:15 pm 

Florida Ballroom V, Tampa Marriott Waterside Hotel & Marina 

• Wonder how the technical publication process works? 

• Want to know what editors look for in a quality submission? 

• Want an edge in getting published? 

If you answered yes to any of these questions, then you should make time to attend the JVST Writer’s Workshop being 

held at this week’s AVS Symposium. Editors from major scientific publications will be on hand to offer insights into the 

process of technical publications and suggestions on how to get your work published. 

Editors participating in this JVST Writer’s Workshop include: 

• Dr. Eray Aydil, Editor-in-Chief of JVST 

• Dr. Mark Lavine, Senior Editor of Science 

The Workshop is open to all Symposium student and early-career attendees (no advanced registration is required); 

invitations will be distributed to all Symposium registrants when they collect their materials at Conference Registration. 

A COMPLIMENTARY LUNCH WILL BE PROVIDED TO ALL ATTENDEES. 

Job Information Forum 

Tuesday, October 30, 2012, 12:00 Noon 

Salon E, Tampa Marriott Waterside Hotel & Marina 

• Want to know more about starting a successful career? 

• Not sure whether industry, academia, or government should be the next step? 

Speakers from industry, academia, and government will provide an overview of their career pathways, what they look for 

when evaluating job applicants, how they made their career choices, and what it takes to succeed. 

Speakers at this year’s Job Information Forum include: 

• Assistant Professor Liney Arnadottir (Oregon State University) 

• Surface Scientist Lance Lohstreter (Medtronic) 

• Research Scientist Michael Brumbach (Sandia National Laboratory) 

• Postdoctoral Research Fellow Dev Mukherjee (University of South Florida) 

The Forum is open to all Symposium student and early-career attendees (no advanced registration is required); invitations 

will be distributed to all Symposium registrants when they collect their materials at Conference Registration. 

A COMPLIMENTARY LUNCH WILL BE PROVIDED TO ALL ATTENDEES. 

18

STUDENT CHAPTERS 

Student Chapter Information 

AVS Student Chapters were established in 2003 to provide students tailored opportunities for career and professional 

development within the AVS the materials, processing, and interfaces communities. If there is a Chapter at your college or 

university, we urge you to join. If there isn’t a Chapter at your location, then maybe you’re the person to get one started. 

Please visit the AVS Student Chapter Displays located in the Tampa Convention Center during the Symposium to find out 

how to form a student chapter or to network with current students and compare notes on recent activities and issues of 

common concern. AVS will be happy to assist your university in establishing a chapter. Please visit www.avs.org or contact 

Angela Klink (angela@avs.org) for more information. 

AVS Student Chapters: 

Northwestern University 

UCLA 

University of Alabama at Tuscaloosa 

University of Central Florida 


University of Illinois at Urbana-Champaign 

University of Washington 

19 

Get Involved in 

AVS 

If you want to join an existing Student 

Chapter or start a Student Chapter at your 

university, please contact AVS directly 

(membership@avs.org).

The AVS Professional Leadership Committee will be hosting the 

AVS Career Center, open to all attendees, at the International 

Symposium for the purpose of connecting job seekers with potential 

employers. In addition, in an attempt to create more opportunities 

for employers to find qualified applicants for job openings and 

for qualified applicants to have more opportunities to learn about 

potential employers there will be a Job Fair during the AVS 59th 

International Symposium and Exhibition, October 28–November 2, 

2012 in Tampa, FL. 

The Job Fair continues to grow each year. As a participating company 

you can post your job(s) on the bulletin board, display any 

pertinent company information, interact throughout the day with 

individuals interested in your company and still host interviews in 

a semi-private interview room. Greater exposure is guaranteed! 

CAREER CENTER 

New this year at the AVS Career Center - Résumés will be available electronically for employers to review and interview appointments 

will be scheduled via email messaging. Regular services provided will include collecting job postings/résumés, complete timecards, 

schedule/coordinating interviews, and providing a message board. Interviews may be scheduled Tuesday through Friday (Friday interviews 

will be at a location TBD between Employer and Applicant as necessary). 

EMPLOYERS: 

Job Fair Registration: Includes 1 skirted table (6’ x 2’) with 2 chairs, 1 or more job postings on the Career Center bulletin board, and one 

electronic copy of the résumés on file; ability to review résumés electronically and host interviews in a semi-private room during the job fair. 

The Career Center will be a carpeted area within the exhibit hall. Must register by September 28, 2012 ($500). 

Career Center Registration: Includes 1 or more job postings on the Career Center bulletin board and ability to review résumés electronically 

and host interviews in a semi-private room during the job fair.. (FREE prior to 10/19; $50 After 10/19). 

Résumé Files only: After the symposium you will receive an electronic copy of all job seeker résumés/CVs. ($150) 

Job Posting(s) only: Includes 1 or more job postings on the Career Center bulletin board. (FREE) 

Potential Employers: 

• Submit registration form by Septemer 28, 2012 - registration form is available online 

• Email job postings by October 19, or bring 2 copies of each job posting onsite 

• Complete a time card at beginning of the week at the Career Center Registration area 

• Check for messages from interested applicants (regularly each day) 

• NEW!! Review Résumés ELECTRONICALLY 

• Reply to messages (i.e. interview, regrets, etc.) 

• Schedule/conduct interviews (onsite and informal) 

Job Seekers: 

• Email your résumé by October 12 (OR bring copy on a flash drive) 

• Complete a time card at beginning of the week at the Career Center Registration area 

• Review job boards daily 

• Leave messages for employers/check email for interivew appointments (frequently each day) 

• Be available for onsite/informal interviews 

• Bring EXTRA, clean copies of your résumé to hand out as needed 

Your résumé will be included in an electronic file available for review by potential employers. When you leave a message slip of interest for 

an employer, you will receive an email message if they wish to schedule an interview. It is important to check your email often each day so 

you do not miss any interview opportunities. 

AVS Career Center Online Registration and Information: 

http://www2.avs.org/symposium/AVS59/pages/career_center.html, click on Meetings/Events/Services and then Career Center (there is a 

section for Employers and Job Seekers in addition to the Employer registration form) 

Hours/Location October 28-November 1, 2012 

Sunday 2:00pm - 6:00 pm Career Center Registration Area 

Monday 7:30am - 5:00 pm Career Center Registration Area 

Tuesday 10:00am - 5:30 pm Exhibit Hall Booth 733 

Wednesday 10:00am - 4:30 pm Exhibit Hall Booth 733 

Thursday 10:00am - 2:00 pm Exhibit Hall Booth 733 

Thursday 2:00pm - 5:00 pm Career Center Registration Area 

20 

A V S . . . 

Creating the 

opportunity for 

making the right 

connections 

•Networking 

•Career Services 

•Job Fair 

•Interview Skills 

Advance Submission Deadlines: 

Job Fair Table: Sepember 28, 2012 

Job Postings: October 19, 2012 

Résumés/CVs: October 12, 2012 

Advance résumés may be emailed to: 

Heather Korff, heather@avs.org 

For additional career resources, please visit the 

AVS Online Career Center at: http://careers.avs.org 

Questions: 301-209-3189; jobs@avs.org

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Visit the 

AVS STORE 

Visit the AVS Store at Booth 733: 

Tuesday: 10:00 a.m. - 5:30 p.m. 

Wednesday: 10:00 a.m. - 4:30 p.m. 

Thursday: 10:00 a.m. - 2:00 p.m. 

AVS Apparel & Logo Items 

AVS Educational Materials 

AVS Presentations On Demand 

No time to atend a talk? Check out our 

colection of recordings from AVS 59. 

Viewing for Members & Atendees is 

FREE (Available mid-November) 

Visit Booth 733 or Shop Online at 

htps:/www.avs.org/about-online-store.aspx 

Seling AVS Educational 

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Stop by to learn more about AVS Membership Benefits 

Participate in Daily Surveys • Quizzes • Provide Testimonial 

Receive a FREE AVS Colectible (while supplies last): 

Tuesday - “Keep an Eye on AVS” 

Wednesday - “Carve Out a Beter AVS” 

Thursday - “Put Your Spin on AVS “

AVS-59 SPONSORS 

AVS would like to acknowledge the following companies who have 

generously provided support for AVS-59 events. 

A DIVISION OF ULVAC-PHI 

24

AVS CORPORATE MEMBERS 

AVS wishes to thank the following Corporate Members for their support. For information on benefits or 

to become a corporate member please contact Angela Klink; angela@avs.org or refer to the AVS website: 

www.avs.org 

• Advanced Energy Industries Inc. 

• Agilent Technologies 

• AJA International, Inc. 

• Alicat Scientific, Inc. 

• Altair Technologies, Inc. 

• Asylum Research 

• BellowsTech, LLC 

• Bruker Nano Surfaces 

• Cambridge NanoTech 

• Capitol Vacuum Parts 

• CeramTec North America 

• Chuanbei Vacuum Technology (Beijing) Co., Ltd. 

• Denton Vacuum LLC 

• Duniway Stockroom Corp. 

• Edwards Vacuum, Inc. 

• Evans Analytical Group 

• FMG Enterprises, Inc. 

• Gamma Vacuum 

• GNB Corporation 

• Helium Leak Testing, Inc. 

• Hiden Analytical, Inc. 

• Hine Automation 

• HUETTINGER Electronic, Inc. 

• HVS Leak Detection 

• Innovative Vacuum Solutions, Inc. 

• Intellivation, LLC 

• ION-TOF USA Inc. 

• Kratos Analytical 

• Kurt J. Lesker Company 

• Lam Research Corporation 

• M&I Materials Ltd (Apiezon) 

• MeiVac, Inc. 

• MEWASA North America, Inc. 

• MKS Instruments Inc. 

• Nor-Cal Products 

• Nordiko Technical Services Limited 

• Omicron Nanotechnology USA, LLC 

• Oxford Instruments - Austin Scientific 

• Pfeiffer Vacuum Technology 

• Physical Electronics 

• Plasmaterials Inc. 

• Plasma-Therm 

• PREVAC sp. z o.o. 

• Process Materials Inc. 

• R.D. Mathis Company 

• RBD Instruments, Inc. 

• RF VII Inc. 

• RHK Technology Inc. 

• SAES Getters USA, Inc. 

• Scientific Instruments, Inc. 

• Semicore Equipment 

• Sequoia Brass and Copper 

• SPECS Surface Nano Analysis GmbH 

• Staib Instruments, Inc. 

• Sumitomo (SHI) Cryogenics of America, Inc. 

• Super Conductor Materials Inc. 

• Ted Pella, Inc. 

• Thermionics Laboratories, Inc. 

• Thermo Fisher Scientific 

• Transfer Engineering and Manufacturing Inc 

• Trillium US 

• U-C Components Inc. 

• Vacuum Engineering & Materials Co., Inc. 

• Vacuum Research Corp. 

• VAT Inc. 

• VG Scienta, Inc. 

Media Sponsors 

25

1970 Erwin W. Mueller 

1971 Gottfried K. Wehner 

1972 Kenneth C.D. Hickman 

1973 Lawrence A. Harris 

1974 Homer D. Hagstrum 

1975 Paul A. Redhead 

1976 Leslie Holland 

1977 Charles B. Duke 

1978 Georg H. Hass 

1979 Gert Ehrlich 

1981 Harrison E. Farnsworth 

1983 H.H. Wieder 

1984 William S. Spicer 

1985 Theodore E. Madey 

1978 Pierre V. Auger 

1980 Daniel Alpert 

1982 Alfred H. Sommer 

1984 Alfred Benninghoven 

1986 Rointan F. Bunshah 

1986 Alfred Y. Cho 

1988 John R. Arthur, Jr. 

1985 John L. Vossen 

1986 Donald J. Santeler 

1987 Marsbed Hablanian 

1988 Stanley L. Milora 

1989 Charles D. Wagner 

1989 Martin P. Seah 

1990 J. Peter Hobson 

1991 Harold R. Kaufman 

1992 Paolo della Porta 

1993 John O’Hanlon 

1989 Eric Kay 

1990 Maurice Francombe 

1991 Joseph E. Greene 

1992 Thomas R. Anthony 

1993 John W. Coburn 

1993 Harold F. Winters 

1980 Christopher R. Brundle 

1981 Lawrence L. Kazmerski 

1982 Charles M. Magee 

1983 D. James Chadi 

1984 Barbara J. Garrison 

1985 Franz J. Himpsel 

1986 Richard A. Gottscho 

1987 Raymond T. Tung 

1988 Jerry D. Tersoff 

1989 Randall M. Feenstra 

1990 Stephen M. Rossnagel 

1959 Rudy A. Koehler 

1963 Benjamin B. Dayton 

1967 Daniel Alpert 

1968 Luther E. Preuss 

1981 Leonard C. Beavis 

1981 N. Rey Whetten 

1982 Charles B. Duke 

1984 J. Roger Young 

1985 Kai Siegbahn 

1986 Manfred S. Kaminsky 

1988 Jack H. Singleton 

AVS AWARD WINNERS 

MEDARD W. WELCH AWARDEES 

1986 Harald Ibach 

1987 Mark J. Cardillo 

1988 Peter Sigmund 

1989 Robert Gomer 

1990 Jerry M. Woodall 

1991 Max Lagally 

1992 Ernst Bauer 

1993 George Comsa 

1994 John Yates, Jr. 

1995 Gerhard Ertl 

1996 Peter J. Feibelman 

1997 Phaedon Avouris 

1998 David E. Aspnes 

1999 John H. Weaver 

GAEDE-LANGMUIR AWARDEES 

1990 Francois M. d’Heurle 

1992 Russell D. Young 

1994 Robert J. Celotta 

1994 Daniel T. Pierce 

1996 Gerald J. Lapeyre 

1998 Paul D. Palmberg 

2000 Gary W. Rubloff 

ALBERT NERKEN AWARDEES 

1994 Hajime Ishimaru 

1995 Donald Mattox 

1996 William R. Wheeler 

1997 John C. Helmer 

1998 Peter J. Clarke 

1999 Paul Holloway 

2000 John T. Grant 

2001 Cedric Powell 

2002 David J. Harra 

2003 Peter B. Barna 

JOHN A. THORNTON MEMORIAL AWARDEES AND LECTURES 

1994 David Hoffman 

1995 Jan-Eric Sundgren 

1997 James M.E. Harper 

1999 Timothy Coutts 

2001 Samuel D. Bader 

2003 William D. Sproul 

PETER MARK AWARDEES 

1991 William J. Kaiser 

1993 Robert Hamers 

1994 Marjorie Olmstead 

1995 Emily Carter 

1996 Brian E. Bent 

1997 Brian Swartzentruber 

1998 David G. Cahill 

1999 Eray S. Aydil 

2000 Stacey F. Bent 

2001 Eli Rotenberg 

2002 Rachel S. Goldman 

HONORARY MEMBERSHIP 

1991 John W. Coburn 

1991 J. Lyn Provo 

1992 Marsbed Hablanian 

1996 Howard Patton 

1997 Paul Holloway 

1997 William D. Westwood 

1998 Collin Alexander 

1999 Donna Bakale Sherwin 

1999 James S. Murday 

2000 Lawrence L. Kazmerski 

2001 Robert Willis 

26 

2000 D. Phillip Woodruff 

2001 E. Ward Plummer 

2002 Buddy Ratner 

2003 Matthias Scheffler 

2004 Rudolf M. Tromp 

2005 Charles S. Fadley 

2006 John C. Hemminger 

2007 Jerry Tersoff 

2008 Miquel Salmeron 

2009 Robert J. Hamers 

2010 Mark J. Kushner 

2011 Wilson Ho 

2012 Yves Chabal 

2002 Cristoforo Benvenuti 

2004 Kunio Takayanagi 

2006 Leonard J. Brillson 

2008 Daniel Auerbach 

2010 Gerald Lucovsky 

2012 Dietrich Menzel 

2004 Johan K. Fremerey 

2005 Christopher R. Brundle 

2006 Siegfried Hofmann 

2007 Richard J. Colton 

2008 Seizo Morita 

2009 Donald R. Baer 

2010 Fan Ren 

2011 John E. Rowe 

2012 Sven Tougaard 

2005 Stan Veprek 

2007 Stephen J. Pearton 

2009 Frances A. Houle 

2011 Vincent M. Donnelly 

2003 Charles H. Ahn 

2004 Kathryn W. Guarini 

2005 Jane P. Chang 

2006 Mark C. Hersam 

2007 W.M.M. Kessels 

2008 Sergei Kalinin 

2009 Beatriz Roldan Cuenya 

2010 Arutiun Ehiasarian 

2011 Mohan Sankaran 

2012 E. Charles H. Sykes 

2003 H. Frederick Dylla 

2003 Gary E. McGuire 

2004 Arthur O. Fuente, Jr. 

2004 J.W. Rogers, Jr. 

2005 Gerald Lucovsky 

2006 Alvin Czanderna 

2007 Paula J. Grunthaner 

2008 Eric Kay 

2009 Rudolf Ludeke 

2009 William D. Sproul 

2011 Robert A. Childs

JOHN L. VOSSEN MEMORIAL AWARDEES 

1997 Robert Shaner 

1998 Hasan Fakhruddin 

1999 Chris Ann Slye 

2000 Charles J. Miltenberger 

AVS AWARD WINNERS 

2001 Paul Lulai 

2002 Toni L. Evans 

2004 Jacqueline G. Kane 

DOROTHY M. AND EARL S. HOFFMAN AWARDEES 

2003 Kenneth Bratland (Univ. of Illinois at Urbana-Champaign) 

2004 Michael Filler (Stanford University) 

2005 Michael Zellner (University of Delaware) 

2006 Xingyi Deng (Harvard University) 

2007 Thomas Mullen (Pennsylvania State University) 

1990 Jani C. Ingram (University of Arizona) 

1991 Lucia Markert (University of Illinois) 

1992 Hope Michelson (IBM Almaden Research Center) 

1993 Laura Tedder (University of California, San Diego) 

1994 Monica Katiyar (University of Illinois) 

1995 Cynthia Kelchner (Iowa State University) 

1996 Tracey E. Caldwell (University of California, Davis) 

1997 Catherine Labelle (Massachusetts Institute of Technology) 

1998 Jennifer S. Hovis (University of Wisconsin) 

1999 Nerissa Taylor (University of Illinois) 

2000 Jennifer E. Gerbi (University of Illinois) 

1983 J.S. Villarubia (Cornell University) 

1984 Kenneth T.Y. Kung (MIT) 

1985 Anne L. Testoni (Northwestern University) 

1986 Jingguang G. Chen (University of Pittsburgh) 

1987 Joanne R. Levine (Northwestern University) 

1988 Christopher E. Aumann (University of Wisconsin) 

1989 Brian S. Swartzentruber (University of Wisconsin) 

1990 Guangquan Lu (University of California, San Diego) 

1991 Michael Flatte (University of California, Santa Barbara) 

1992 Rex Ramsier (University of Pittsburgh) 

1993 Daniel Kelly (University of California, Santa Barbara) 

1994 Britt Turkot (University of Illinois) 

1995 Robert Carpick (University of California, Berkeley) 

1996 Kevin Robbie (University of Alberta) 

1997 Kimberly S. Turner (Cornell University) 

NELLIE YEOH WHETTEN AWARDEES 

AVS RUSSELL AND SIGURD VARIAN AWARDEES 

27 

GEORGE T. HANYO AWARDEES 

1997 Mark Engelhard 

1998 David A. Lubelski 

1999 Robert A. Childs 

2001 John E. Bultman 

2003 Ernest A. Sammann 

2004 Richard E. Muller 

2006 Jeffrey D. Kelley 

2010 Arthur W. Ellis 

2011 Jonathan Koch 

2012 Percy Zahl 

2008 Gregory Rutter (Georgia Institute of Technology) 

2009 Juan Carlos Rodriguez-Reyes (University of Delaware) 

2010 Esther Amstad (ETH Zurich, Switzerland) 

2011 Kangkang Wang(Ohio University) 

2001 Tanhong Cai (Iowa State University) 

2002 Lyudmila Goncharova (Rutgers University) 

2003 Meredith L. Anderson (Carnegie Mellon University) 

2004 Wensha Yang (University of Wisconsin, Madison) 

2005 Natalia Farkas (University of Akron) 

2006 Jessica Hilton (University of Minnesota) 

2007 Andrea Munro (University of Washington) 

2008 Brittany Nelson-Cheeseman (University of California, Berkeley) 

2009 Sarah Bishop (University of California, San Diego) 

2010 Xiaoyu Wang (University of Wisconsin, Madison) 

2011 Sondra Hellstrom (Stanford University) 

1998 John S. Lewis, III (University of Florida) 

1999 Sanjit Singh Dang (University of Illinois, Chicago) 

2000 Michelle L. Steen (Colorado State University) 

2001 Jianwei Dong (University of Minnesota) 

2002 Wei Tan (University of Illinois) 

2003 John R. Kitchin (University of Delaware) 

2004 Vassil Antonov (Univ. of Illinois at Urbana-Champaign) 

2005 Liam Pingree (Northwestern University) 

2006 Gregory Ten Eyck (Rensselaer Polytechnic Institute) 

2007 H. Lee Mosbacker (Ohio State University) 

2008 Erik Wallen (Linkoping University) 

2009 Sudhakar Shet (New Jersey Institute of Technology/NREL) 

2010 Christine Tan (Cornell University) 

2011 David A. Siegel (University of California, Berkeley)

AVS 59th Anual 

Awards 

Ceremony& 

Reception 

Celebrate with AVS awardes at the 

59th Awards Ceremony 

Wednesday, October 31, 2012 

in the Tampa Convention Center Balrom B 

at 6:15 p.m. 

Folowed by the 

59th Awards Reception 

in the Tampa Mariot Waterside Hotel & Marina 

Florida Balrom 

Complete details available online at www.avs.org

AWARDS CEREMONY & 

RECEPTION 

The AVS Awards Ceremony will be held on 

Wednesday, October 31, 2012 at 6:15 p.m. in 

Ballroom B of the Tampa Convention Center to 

be followed immediately by an Awards Reception 

in the Florida Ballroom of the Tampa Marriott 

Waterside Hotel and Marina. This year, 

AVS honors the following awardees: 

Yves Chabal, Medard W. Welch Award 

Sven Tougaard, Albert Nerken Award 

Dietrich Menzel, Gaede-Langmuir Award 

E. Charles H. Sykes, Peter Mark Award 

Percy Zahl, George T. Hanyo Award 

The newly elected AVS Fellows 

The 2012 AVS National Student Award Finalists 

MEDARD W. WELCH AWARD 

The Medard W. Welch Award was established 

in 1969 to commemorate the pioneering 

efforts of M.W. Welch in founding and supporting 

AVS. It is presented to recognize and encourage 

outstanding research in the fields of interest to 

AVS. The award consists of a cash award, a 

struck gold medal, a certificate, and an honorary 

lectureship at a regular session of the International 

Symposium. 

YVES CHABAL 

Dr. Yves Chabal, University of Texas, Dallas, 

“for his exceptional studies of vibrations at 

surfaces, especially the development and application 

of surface infrared spectroscopy to understand 

the physics and chemistry of hydrogenterminated 

silicon and atomic layer deposition” 

Yves Chabal currently holds a Texas Instrument 

Distinguished University Chair in Nanoelectronics 

and is department Head of Materials 

Science and Engineering at the University of 

Texas at Dallas. He obtained a BA in Physics 

from Princeton University in 1974, and a Ph.D. 

in Physics from Cornell University in 1980 

under the guidance of Prof. Al Sievers. He then 

joined Bell Laboratories as a posdoc under the 

mentorship of Jack Rowe. He worked at Murray 

AVS AWARDS 

Hill, New Jersey, from 1980 until 2002 for 

AT&T, Lucent Technologies (1996) and Agere 

Systems (2001) in the Surface Physics, Optical 

Physics and Materials Science departments 

where he developed sensitive spectroscopic 

methods to characterize surfaces and interfaces. 

In 2003, he joined Rutgers University as Professor 

in Chemistry and Biomedical Engineering, 

where he expanded his research into new methods 

of film growth, bio-sensoring, and energy 

applications. He directed the Laboratory for 

Surface Modification, an interdisciplinary Center 

to promote large initiatives. He joined UT 

Dallas in January 2008 to lead the Materials Science 

and Engineering department in the Erik 

Jonsson Engineering School. 

Yves’s scientific preparation was marked by 

strong training in spectroscopy from Steve 

Schnatterly at Princeton, Al Sievers at Cornell, 

and Jack Rowe at Bell Labs. In addition to the 

unique and stimulating environment of Bell 

Labs, his career has benefited enormously from 

strong and sustained mentorship by Jack Rowe, 

support and collaborations from colleagues like 

Don Hamann, John Tully, Mark Cardillo and 

Gregg Higashi and many others at Bell Labs, 

including outstanding postdocs and students 

who joined his group. Among them, Janice 

Reutt-Robey, Melissa Hines, Kate Queeney and 

Sandrine Rivillon have played a key role in 

shifting his focus from UHV studies of surface 

structure and dynamics to surface kinetics and 

chemistry, including wet-chemical modification 

of semiconductor surfaces. In fact, the discovery 

with Gregg Higashi of a wet-chemical process 

to make atomically flat H-terminated Si(111) 

surfaces with higher structural quality than any 

Si(111) surfaces prepared in vacuum engaged 

him into a fascinating journey to understand the 

etching process and the means of chemically 

functionalizing such stable surfaces. 

Thus, while the first part of his career was 

marked by structural and dynamical studies of 

hydrogen and small molecules at surfaces, the 

second has focused on hydrogen passivation or 

oxidation of semiconductor surfaces, and their 

subsequent functionalization using both gas and 

liquid phase processes. In all these areas, his 

work has emphasized elementary processes, 

often studied on remarkably homogeneous 

model surfaces. The fundamental thus derived 

has contributed to front end processing in 

microelectronics process, including atomic layer 

deposition, and now stands as the basis for interesting 

energy applications, such as photovoltaic 

and fuel cells, and sensing applications, such as 

electronic-based biosensors. The energy crisis 

has motivated him to expand his research into 

new directions of interest to the Department of 

Energy, such as hydrogen storage and carbon 

capture in complex materials. 

UT Dallas has provided Yves with exceptional 

facilities for research, and he continues to 

enjoy and benefit from wonderful students, 

postdocs and colleagues with highly multidisciplinary 

and multicultural backgrounds. 

29 

ALBERT NERKEN AWARD 

The Albert Nerken Award was established in 

1984 by Veeco Instruments, Inc. in recognition 

of its founder, Albert Nerken, a founding member 

of AVS. Albert Nerken’s work was in the 

field of high vacuum and leak detection and he 

made contributions to the commercial development 

of the instrumentation. The Albert Nerken 

Award is presented to recognize outstanding 

contributions to the solution of technological 

problems in areas of interest to AVS. The award 

consists of a cash award, a certificate and an 

honorary lectureship at a regular session of the 

International Symposium. 

SVEN TOUGAARD 

Dr. Sven Tougaard, University of Southern 

Denmark, “for the development of advanced 

methods to characterize thin-film nanostructures 

by X-ray photoelectron spectroscopy” 

Sven Tougaard received a MS from the Technical 

University at Copenhagen in 1975, and a 

PhD from Odense University, Denmark in 1979. 

In 1979-84 he was post. doc. at the University of 

Houston, at Odense University, and at Universität 

Osnabrück, Germany. Since 1984 he has been 

professor at University of Southern Denmark. 

One of his main research interests has been 

the development of improved quantitative procedures 

for XPS and AES analysis. He developed 

new methods to correct AES and XPS 

spectra for the background of inelastically scattered 

electrons and proposed models to obtain 

quantitative information on the depth distribution 

of atoms in the 0-10 nm depth range from 

analyses of the inelastically scattered electrons. 

Recognizing the importance of accurate inelastic 

scattering cross sections to exploit the full 

potentials of his algorithms, he then started theoretical 

calculations of inelastic cross sections 

for a wide range of materials within a dielectric 

response description and he also developed a 

new experimental method, which is now widely 

used, to determine the inelastic cross section 

experimentally from analysis of reflected electron 

energy loss spectra (REELS). To make the 

formalism more suitable for practical quantitative 

XPS analysis he invented the Universal 

cross sections which are now widely used. Prof.

Tougaard and his coworkers tested the validity 

of his method for nanostructure and thin-film 

analysis by performing a series of critical experiments 

that also involved comparisons with 

other quantitative techniques such as the quartz 

crystal microbalance, Rutherford backscattering 

spectroscopy, X-ray fluorescence, TEM, and 

atomic force microscopy. His methods are nondestructive 

and provide information that is in 

many cases hardly possible to get with other 

techniques. As the analysis is done with a single 

XPS spectrum, phenomena can be studied as 

they happen with a near real time resolution and 

examples of studies include chemical reactions, 

diffusion and thin film growth mechanisms. 

Lately he has developed new algorithms which 

are aimed at automated XPS analysis. With coworkers 

he has demonstrated that these algorithms 

can also be applied to make 3-D XPS 

images of surface nano-structures. 

More recently, he has together with co-workers 

developed a new effective algorithm to extract 

the dielectric function of nanometer thin films 

from analysis of REELS. This quantity is hard 

to obtain with other methods and they have 

applied this to determine dielectric properties of 

the new gate-oxide films. He is also developing 

dielectric-response models to investigate the 

influence on the fundamental excitations in XPS 

and AES spectra caused by interactions with the 

core-hole and the surface. 

In parallel with the development of the complex 

theoretical algorithms, he has made these 

generally available for the practical analyst by 

producing user friendly software packages 

which he distributes through the QUASES software 

company which he founded in 1994. They 

are used worldwide by researchers in academics 

and industry. 

Prof. Tougaard has been Editorial Board 

Member of the Journal of Electron Spectroscopy 

and Related Phenomena from 1990- 

2012 and serves on the Editorial boards of the 

following journals: Surface and Interface Analysis 

(since 1989), Journal of Surface Analysis 

(since 1994), and Surface Science Spectra (since 

1991). He is a member of Steering Committee 

for ECASIA. He has participated in and conducted 

several EU supported international projects 

and has a long-standing active scientific 

collaboration with several research institutes in 

Europe, USA, Korea and Japan. 

He has published more than 200 journal 

papers, with more than 4800 citations, presented 

more than 50 invited talks at international 

conferences and workshops and served on the 

program committees and advisory boards for 

more than 20 international conferences and 

workshops. 

GAEDE-LANGMUIR AWARD 

The Gaede-Langmuir Award was established 

in 1977 by an endowing grant from Dr. Kenneth 

C.D. Hickman. It is presented to recognize and 

encourage outstanding discoveries and inventions 

in the sciences and technologies of interest 

to AVS. The award is conferred biennially as a 

suitable candidate may be identified. It consists 

of a cash award, a commemorative plaque 

stating the nature of the award, and an honorary 

lectureship at a regular session of the International 

Symposium. 

DIETRICH MENZEL 

Prof. Dietrich Menzel, Fritz Haber Institute, 

Max-Planck Society and Technical University 

Muenchen, Germany, “for major ground breaking 

and sustained contributions towards a comprehensive 

understanding of the energy transfer 

processes influencing the physical and chemical 

behavior of atomic and molecular species on 

metal surfaces” 

Dietrich Menzel is professor emeritus at the 

Physik-Department, Technical University of 

Munich (TUM) in Garching/Germany, and an 

external scientific member of the Fritz-Haber- 

Institut, Max-Planck Society, in 

Berlin/Germany. He has been an important contributor 

to the development of present day surface 

science from early on, and contributed 

insights in many aspects of the chemical physics 

of adsorbates and coadsorbates, and of basic 

surface reactions. He has carried out research in 

surface science and nanoparticles in Berlin, 

Munich, and Trieste. He has published over 380 

research papers with around 14500 citations. 

He holds a Diploma in Chemistry in 1959, 

and a Ph.D. degree in Physical Chemistry in 

1962, from Technische Hochschule Darmstadt 

(THD), Germany. From 1962 to 1964 he was a 

postdoc with Robert Gomer at the James Franck 

30 

Institute, University of Chicago, where he did 

ground-breaking research on electronically 

induced desorption. He then moved back to 

THD and got his Habilitation in 1967. In 1969 

he moved to Munich as a group leader in the 

Institute of Physical Chemistry of TUM. In 

1973 he became a newly created chair professor 

for Surface Physics at the Physik-Department of 

TUM which he held to his retirement in 2003. In 

these 30 years he worked on adsorption and desorption 

kinetics and dynamics, electronic and 

vibrational structure of adsorbates, electronically 

induced surface reactivity, surface geometry, 

and ultrafast surface processes. Often he and his 

group developed new instrumentation. In the 

last years he has also worked on metal nanoparticles 

(in Berlin) and on graphene surfaces (in 

Trieste); in Munich he is participating in a collaborative 

research project on attosecond electron 

spectroscopy. Many of his projects involed 

synchrotron radiation (SR) sources at several 

locations. In this connection he was a member 

of various governing and advisory bodies of the 

SR sources including BESSY and DESY in 

Germany, and Elettra in Italy. He has also 

worked at SSRL in Stanford and at the ALS in 

Berkeley. He has many international collaborative 

efforts with experimental and theoretical 

groups in Europe, America, and Asia. He has 

been a member of advisory and organising committees 

of numerous international conferences. 

He has received several prestigious awards 

including “Akademiepreis in Chemistry”, Academy 

of Sciences at Goettingen 1969; External 

scientific member of Fritz-Haber Institute, Max- 

Planck Society 1989; Max-Planck Research 

Prize for International Cooperation 1997; honorary 

doctorate from Dalhousie University, Halifax/Canada 

1999; “Robert Wichard Pohl Prize” 

of the German Physical Society 2000; Fellow, 

Royal Society of Chemistry, London 2009; 

“Microprobe Analysis Award”, Japanese Society 

for the Promotion of Science 2011; and Fellow 

of Elettra, Sincrotrone Trieste 2012. 

An important aspect of his work concerned 

the education and promotion of young 

researchers. He educated about 50 Ph.D. students 

and 100 Diploma (~Master) students and 

hosted more than 30 postdocs and many visiting 

scientists and guest professors. More than 15 of 

his former students or postdocs held or hold professorships 

or Max-Planck directorships.

PETER MARK MEMORIAL AWARD 

The Peter Mark Memorial Award was established 

in 1979 in memory of Dr. Peter Mark 

who served as Editor of the Journal of Vacuum 

Science and Technology from 1975 to 1979. The 

award is presented to a young scientist or engineer 

(35 years of age or under) for outstanding 

theoretical or experimental work, at least part of 

which must have been published in an AVS 

Journal. The award consists of a cash award, a 

certificate, and an honorary lectureship at a regular 

session of the International Symposium. 

E. CHARLES H. SYKES 

Dr. E. Charles H. Sykes, Tufts University, “for 

pioneering atomic-scale studies of chirality, 

catalysis, and molecular rotation” 

E. Charles H. Sykes is currently an Associate 

Professor of Chemistry at Tufts University. 

Charles got a first class B.S. and M.S. from 

Oxford University before moving to Cambridge 

University for a Ph.D. under the supervision of 

Professor Richard Lambert. His thesis work 

explored the structure and reactivity of model 

gold/titania catalysts. He then relocated to the 

U.S. for postdoctoral fellowships with Professor 

Paul Weiss at Penn State and Professor Mike 

Fiddy at the University of North Carolina at 

Charlotte. His postdoctoral studies were the first 

to directly image and control the placement of 

catalytically important subsurface hydrogen in 

palladium. In 2005 Charles began his independent 

career as an Assistant Professor of Chemistry 

at Tufts University. 

The Sykes group utilizes state of the art scanning 

probes and surface science instrumentation 

to study fundamentally and technologically 

important systems. For example, scanning tunneling 

microscopy enables visualization of the 

geometric and electronic properties of catalytically 

relevant metal alloy surfaces at the 

nanoscale. Using temperature programmed reaction 

studies of well-defined model catalyst surfaces 

structure-property-activity relationships 

are drawn. The Sykes group recently demonstrated 

how single palladium atoms can convert 

the otherwise catalytically inert surface of an 

inexpensive metal into an ultraselective hydrogenation 

catalyst. The mechanism involves 

facile dissociation of molecular hydrogen at 

individual palladium atoms followed by 

spillover onto the copper surface, where ultraselective 

catalysis occurs by virtue of weak binding. 

The reaction selectivity is in fact much 

higher than that measured on palladium alone, 

illustrating the unique synergy of the system. 

In the area of molecular motors, the Sykes 

group has demonstrated the world’s first single 

molecule electric motor. Electrons from a scanning 

tunneling microscope tip were used to 

drive the directional motion of a thioether molecule 

on a copper surface. Surprisingly, the direction 

and rate of the rotation turned out to be 

related to the chirality of both the molecule and 

the tip of the microscope (the electrode), illustrating 

that the exact geometry and chirality of 

electrical contacts to molecules can have a large 

influence on excitation probability, a fact overlooked 

in all nanoscale electrical devices to 

date. 

Charles has been named a Beckman Young 

Investigator, Research Corporation Cottrell 

Scholar, IUPAC Young Observer and the Usen 

Family Career Development Assistant Professor. 

He is also the recipient of an NSF CAREER 

award and a Camille Dreyfus Teacher-Scholar 

Award. He is the author of over 55 peerreviewed 

publications and has given over 50 

invited talks at conferences and universities. 

GEORGE T. HANYO AWARD 

The George T. Hanyo Award was established in 

1996 by the Kurt J. Lesker Company in the 

memory of George T. Hanyo, a highly skilled, 

long-time employee of the company. The award is 

presented to recognize outstanding performance 

in technical support of research or development in 

areas of interest to AVS. It recognizes valuable 

contributions made by persons outside normal 

professional circles. Typical nominees should 

have received mention in the “Acknowledgments” 

sections of the published papers but, 

with the possible exception of papers describing 

new apparatus or procedures, would rarely have 

been authors or co-authors. The award consists 

of a cash award and a certificate setting forth the 

reasons for the award. 

PERCY ZAHL 

31 

Dr. Percy Zahl, Brookhaven National Lab., 

“for outstanding leadership in the development 

of state-of-the-art, open-source software package 

and associated hardware for data acquisition 

and analysis in scanning probe microscopy and 

spectroscopy” 

Percy Zahl is a Scientific Associate in the 

Center for Functional Nanomaterials at 

Brookhaven National Laboratory. Besides 

research on surface science, molecular nanostructures 

and catalysis using scanning probe 

microscopy (SPM), his primary interest focuses 

on SPM instrument and technique development. 

He recently designed and built a “Nanostencil” 

in-situ nanopatterning system. His most extensive 

development has been the “Gxsm Project”, 

an open source system for DSP based SPM 

system control and large scale multidimensional 

data acquisition and analysis 

[http://gxsm.sourceforge.net]. He has been the 

leader of this project for more than a decade. 

Born in Germany, Dr. Zahl studied Physics at 

the University of Hannover, Germany. In 1996, 

as a diploma student in the group of Prof. M. 

Horn-von Hoegen, he installed a commercial 

scanning tunneling microscope and developed 

the instrument control and data acquisition software, 

which marked the birth of the “Gxsm Project”. 

In 2000 he received a Ph.D. in Physics for 

research on surface stress in heteroepitaxial 

films and the development of a system for insitu 

surface stress and morphology measurement. 

At the same time, he decided to continue 

developing “Gxsm” as an open source software 

project under the terms of the GUN General 

Public License, so as to centrally manage and 

maintain the project and avoid a detrimental 

divergence of the code at different user laboratories. 

Following postdoctoral appointments at the 

Colorado School of Mines in Golden, Colorado, 

and at IBM Zurich Research Laboratory in 

Switzerland, during which “Gxsm” underwent 

extensive further development and testing in 

active research projects, Dr. Zahl joined the 

group of Dr. Peter Sutter at Brookhaven’s Center 

for Functional Nanomaterials in 2005. Today 

his main responsibilities include the operation 

and maintenance of cryogenic SPM and UHV 

Nanoprobe instruments, and the support of 

external users on these systems. He actively 

continues work on the “Gxsm Project” as the 

primary project administrator, maintains a related 

discussion forum and continually implements 

new features to keep the project at the forefront 

of ever changing research needs, as well as 

compatible with the latest hardware developments. 

Dr. Zahl is the author of over 30 journal 

publications and holds one US patent.

2012 NATIONAL STUDENT 

AWARD FINALISTS 

There are five (5) top-level named 

Graduate Student Awards and three (3) 

Graduate Research Awards, described 

below. The recipients of these awards are 

determined after a general competition 

with all the graduate research applicants 

and a presentation to the Awards Committee 

at the International Symposium. 

The finalists are: 

AVS GRADUATE STUDENT AWARDS 

Justin Abell, University of Georgia 

Ting Ying Chung, Univ. of California, 

Berkeley 

April Jewell, Tufts University 

Nour Nijem, Univ. of Texas, Dallas 

David Reid, Univ. of Central Florida 

Davide Sangiovanni, Linkoping University 

Afsoon Soudi, Washington State University 

Weiting Yu, University of Delaware 

RUSSELL AND SIGURD 

VARIAN AWARD 

The Russell and Sigurd Varian Award 

was established in 1982 to commemorate 

the pioneering work of Russell and Sigurd 

Varian. It is presented to recognize and 

encourage excellence in graduate studies in 

the sciences and technologies of interest to 

AVS. The award is supported by Varian, 

Inc. It consists of a cash award, a certificate, 

and reimbursed travel support to 

attend the International Symposium. 

NELLIE YEOH WHETTEN AWARD 

The Nellie Yeoh Whetten Award was 

established in 1989, in the spirit of Nellie 

Yeoh Whetten, to recognize and encourage 

excellence by women in graduate studies 


to AVS. A fund to support the award was 

established by Timothy J. Whetten, friends 

and family of Nellie Yeoh Whetten, and 

AVS. The award consists of a cash award, 

a certificate, and reimbursed travel support 

to attend the International Symposium. 

DOROTHY M. AND 

EARL S. HOFFMAN AWARD 

The Dorothy M. and Earl S. Hoffman 

Award was established in 2002 to recognize 

and encourage excellence in graduate 

studies in the sciences and technologies of 

interest to AVS. It is funded by a bequest 

from Dorothy M. Hoffman, who was presi- 

AVS FELLOWS 

dent of AVS in 1974 and held other positions 

of responsibility in the Society. The 

award consists of a cash award, a certificate, 

and reimbursed travel support to 

attend the International Symposium. 

DOROTHY M. AND EARL S. 

HOFFMAN SCHOLARSHIPS 

The Dorothy M. and Earl S. Hoffman 

Scholarships were established in 2002 to 

recognize and encourage excellence in 

graduate studies in the sciences and technologies 

of interest to AVS. They are 

funded by a bequest from Dorothy M. 

Hoffman. The scholarships consist of a 

cash award, a certificate, and reimbursed 

travel support to attend the International 

Symposium. 

GRADUATE RESEARCH AWARDS 

The Graduate Research Awards were 

established in 1984 to recognize and 

encourage excellence in graduate studies 


to AVS. Each consists of a cash award, a 

certificate, and reimbursed travel support 

to attend the International Symposium. 

The membership level designated “Fellow of the Society” was established in 1993 to recognize members who have made sustained and 

outstanding scientific and technical contributions in areas of interest to AVS. These contributions can be in research, engineering, technical 

advancement, academic education or managerial leadership. This is a prestigious membership level to which members are elected. 

AVS Fellows receive a certificate. 

2012 AVS FELLOWS 

Lee Chen, Tokyo Electron America 

Andrew Gellman, Carnegie Mellon University 

Rachel S.Goldman, University of Michigan 

Mark Hersam, Northwestern University 

32 

Christian Mitterer, University of Leoben 

Sudipta Seal, University of Central Florida 

William F. Stickle, Hewlett Packard 

Roland Wiesendanger, University of Hamburg

Develop Your Leadership Skills Broaden & Share Your Knowledge 

Develop Your Your Leadership Skills Broaden & Share Your Knowledge Enhance Your Career 

www.avs.org 

212-248-0200 

AVS Student Activities 

Did you know that 25% of AVS membership is comprised of students? You 

represent the future of AVS and we encourage you to take advantage of the 

following opportunities and services: 

Student Chapters 

AVS has several Student University Chapters, each with the goal of generating student interest in 

a range of science and technology topics of interest to AVS. Student Chapters provide an avenue 

to meet other students and professionals. It’s a great way to make friends and start forming a 

network of contacts that can help you throughout your career. Meet future employers and colleagues 

through meetings and other chapter activities. 

Student Awards 

AVS has many Student Awards both at the National and Divisional level. The AVS National Student 

Awards include fi ve (5) top-level awards and multiple Graduate Research Awards (GRAs). All AVS 

National Student Awards are presented at the Awards Ceremony at the International Symposium. 

They include travel support as well as a cash award. In addition students may apply for a national 

student award and one Division/Group Award in a given year. 

Career Services 

The AVS Online Career Center (Weddle’s Top 100 website) is part of the Physics Today Career Network. 

Jobs and resumes are shared with four partner job boards - Physics Today Jobs, the American 

Association of Physics Teachers (AAPT) and American Physical Society (APS) Career Centers, 

and the IEEE Computer Society Jobs board. Connect with the fi nest job seekers and companies in 

physics, engineering, vacuum science, and technology. 

AVS also offers an annual Onsite Career Center/Mini Job Fair at the AVS International Symposium 

and Exhibition for the purpose of connecting job seekers with potential employers to facilitate 

contact and networking during the Conference. A great opportunity to meet with potential employers 

and gain interviewing skills. 

Short Courses 

AVS Short Courses not only facilitate student/instructor interactions, but provide networking opportunities 

with peers. In addition, several AVS Chapters host courses regionally. For a complete 

list of short course at a student discount rate please visit our short course section. 

AVS Publications 

AVS publishes four journals on a variety of topics. Explore our journals in the AVS Publications 

Digital Library and take advantage of our newest feature i-AVS. 

Stay Connected 

Join our online Facebook or LinkedIn 

communities. 

“ As a student member, AVS has given me the 

opportunity to present my work at the local and 

national level, meet some great contacts, and develop 

the skills I need to be successful.” 

Peter Palomaki, Ph.D. Candidate, 

Rensselaer Polytechnic Institute 

Develop Your Leadership Skills Enhance Your Career 

Enhance Your Career Gain Recognition Develop Your Leadership Skills

DIVISION AWARDS 

Morton M. Traum Surface Science Division Student Award 

The Surface Science Student Award was initiated in 1981. Morton M. Traum, then chair of the Surface Science Division, was the prime 

motivator in establishing the award. After Mort’s untimely death on 1 December 1982, the Executive Committee of the Surface Science 

Division renamed the award in his memory. The Morton M. Traum Surface Science Division Student Award is presented annually for the 

best student paper based on work leading to a Ph.D thesis. The papers are judged on technical content and quality of presentation. 

The 2012 winner will be announced in the Traum Student Award Ceremony, to be held on Thursday, November 1 at noon immediately following 

the Thursday morning session. 

Past winners: 

1981 Eric Stuve 

1982 Steven Gates 

1983 Ann Smith 

1984 Hans Gossman 

1985 Duane Outka 

1986 Greg Sitz 

1987 Michael Henderson 

1988 Jeff Hanson 

1989 Yunong (Neal) Yang 

1990 Benjamin Wiegand 

1991 David Peale 

1992 Chaochin Su 

1993 Anna Swan 

1994 Bert M. Müller 

1995 Frank Zimmermann 

1996 Joseph Carpinelli 

1997 Barry Stipe 

1998 Alexander Bogicevic 

1999 Jongin Hahn 

2000 Anders Carlsson 

2001 Jeppe Vang Lauritsen 

2002 Seth B. Darling 

2003 Marcel A. Wall 

2004 Emrah Ozensoy 

2005 Jan Haubrich 

2006 Petro Maksymovych 

2007 Bogdan Diaconescu 

2008 Jeibin Sun 

2009 Qing Hua 

2010 Heather Tierney 

2011 David Siegel 

John Coburn and Harold Winters Student Award in Plasma Science and Technology 

In 1994, the Plasma Science and Technology Division established the Coburn and Winters Award in honor of John Coburn and Harold 

Winters. Coburn and Winters have made pioneering contributions to the field of plasma science, especially in plasma processing and 

plasma-surface interactions. Their work has provided inspiration for countless students entering the field of plasma science and they have 

enhanced the graduate experiences of students by both example and mentorship. The Coburn-Winters Award winner will be announced at 

2:00 p.m. in the Thursday, November 1 afternoon session. 

Past winners: 

1994 Bruce Kellerman 

1995 Not Given 

1996 Jane Chang 

1997 Mikhail Malyshev 

1998 Catherine Labelle 

1999 W.H. Rippard 

2000 R.D. Portugal 

2001 D.B. 

Schultz 

1999 Erwin Kessels 

2000 Siva Kanakasabapathy 

2001 Nicholas Fuller 

2002 Lin Sha 

2003 Jan Benedikt 

2002 E.L. Biizdaca 

2003 Tiffany Kaspar 

2004 Maria Torija 

2005 Jessica Hilton 

34 

2004 Jun Belen 

2005 Joseph Végh 

2006 Lin Xu 

2007 Joydeep Guha 

2008 Emile Despiau-Pujo 

Leo M. Falicov Student Award 

2006 Randy Dumas 

2007 David Wisbey 

2007 John Strachan 

2008 Zhuhua Cai 

2009 Yang Yang 

2010 Bhavin Jariwala 

2011 Harald B. Profijt 

The Leo M. Falicov Student Award has been established in memory of Prof. Leo M. Falicov to recognize outstanding research performed by a 

graduate student in areas of interest to the Magnetic Interfaces and Nanostructures Division. Finalists will be selected on the basis of abstract submission, 

and will each receive an award upon attending the AVS 59 

Past winners: 

th International Symposium and Exhibition and presenting their paper in an 

oral session. The Best Student Paper Award winner will be selected on the basis of the oral presentation, considering quality of research and clarity 

of presentation. 

Paul H. Holloway Young Investigator Award 

Past winners: 

2009 Suneel Kodambaka, UCLA 

2011 Sumit Agarwal Colorado School of Mines 

2010 O. Martin Ntwaaborwa, Univ. of the Free State, South Africa 

2009 Wei Han 

2010 Kangkang Wang 

2011 Juan Colon-Santana 

The Thin Film Division is pleased to announce Franklin Tao of the Univ. of Notre Dame is the 2012 awardee of the Paul H. Holloway 

Young Investigator Award. Professor Tao has been given the award for his contributions to the understanding of surface and interfacial 

processes in thin film and nano-materials systems, based on the development of instrumentation for structural and electronic property characterization 

of surfaces under catalytically relevant conditions. 

This award is named after Prof. Paul H. Holloway of the University of Florida who has a distinguished and continuing career of scholarship 

and service to AVS. The nominee is a young scientist or engineer who has contributed outstanding theoretical and experimental work in an 

area important to the Thin Film Division of AVS. The nominee’s Ph.D. or equivalent degree must have been earned less than 7 years prior to 

January 1 of the award year. The award consists of a cash prize, a certificate citing the accomplishments of the recipient, and an honorary lecture 

at one of the TFD oral sessions at the International Symposium.

Past winners: 

2002 Jeremy Steinshinder 

2003 Cheol-Soo Yang 

2004 Qiguang Li 

2005 Kiu-Yuen Tse 

2006 Tracie Colburn 

Past winners: 

2001 Nancy Burnham 

2004 Harold Craighead 

2009 Joseph Stroscio 

DIVISION AWARDS 

Nanometer-scale Science and Technology Division Student Award 

The Nanometer-scale Science and Technology Division (NSTD) Student Award was established in 1998 to bring recognition to outstanding 

dissertation work by students giving oral presentations in NSTD sessions at AVS International Symposia. In addition to presenting 

their work in the standard NSTD sessions, student finalists will also present their talks at the NSTD student competition. The NSTD 

student competition is open to the public and will be held at noon on Wednesday of the symposium in the same room as the standard NSTD 

sessions. The winner will be selected based on the quality of the talk, the responses to questions, and the level of the research. The winner 

will be announced at the close of the student competition. 

2006 Dirk Weber 

2007 Jacob Palmer 

2008 Qing Hua 

2009 Mehmet Baykara 

2010 Farzad Behafarid 

2010 Roland Wiesendanger 

2011 Phaedon Avouris 

35 

2011 Justice Alaboson 

Nanometer-scale Science and Technology Division Recognition Award 

The Nanotechnology Recognition Award recognizes members of NSTD for outstanding scientific and technical contributions in the 

science of nanometer-scale structures, technology transfer involving nanometer-scale structures, and/or the promotion and dissemination of 

knowledge and development in these areas. The Award will be presented before the recipient’s talk at the AVS International Symposium. 

The 2012 Awardee is Flemming Besenbacher. 

Get Involved in AVS 

If you have any questions about AVS or 

want to know how to get involved, please 

contact AVS directly at avsnyc@avs.org

The AVS Exhibition offers a vibrant display of the latest 

products and services available in the industry. Exhibitor 

Technology Spotlight Sessions take place during session 

breaks during exhibit days in addition to a variety of other 

activities including free caricatures, massages, raffles, 

career center, e-mail pavilion, free coffee, lunches and 

much more. Visit the Exhibits! 

FREE EXHIBIT HALL ATTRACTIONS 

AVS Career Center 

AVS Membership & Education Booth 

Morning Coffee 

Free Lunch 

Technology Spotlight Sessions 

Free Afternoon Refreshments 

Art Zone Display & Competition 

Daily Raffle Drawings 

AVS Store: Gifts/Souvenirs/Supplies 

Ask The Experts - Vacuum Technology 

Internet Access 

Caricatures 

Massages 

Leeds History Display 

EXHIBIT FINALE 

THURSDAY 12PM - 2PM 

EVENTS: 

•Free Lunch & Refreshments 

•Art Contest Prize Winners 

•Raffle Drawings & MORE! 

Join Us !! 

36 

Caricatures 

Massages 

Daily Raffles 

EXHIBIT SCHEDULE 

Exhibits Open October 30 - November 1 

Oct. 30 Tuesday 10am - 5:30pm 

Oct. 31 Wednesday 10am - 4:30pm 

Nov. 1 Thursday 10am - 2:00pm 

EXHIBIT FINALE, THURSDAY 12PM - 2PM

Company Name 

A&N Corporation 

Accu-Glass Products Inc. 

Advanced Chemical Company 

Agilent Technologies, 

Vacuum Products Division 

AJA International, Inc. 

Alicat Scientific, Inc. 

American Institute of Physics 

Anasys Instruments 

Angstrom Scientific Inc 

Annealsys 

Applied Surface Technologies 

Association of Vacuum 

Equipment Manufacturers 

Asylum Research 

Atlas Technologies 

AVS - Ask The Experts 

AVS Special Events 

AVS Art Zone & Contest 

AVS Career Center 

AVS Membership & Education 

AVS Raffle Zone 

AVS E-Mail Pavilion 

AVS Exhibitor Technology 

AVS Foosball Tournament 

AVS Future Sites 

AVS History Booth 

AVS Publications 

BellowsTech, LLC 

Beneq 

BJA Magnetics 

Brooks Automation 

Bruker AXS, Inc. 

Bruker Corporation 

Bruker Optics, Inc. 

Cambridge NanoTech, Inc. 

CAMECA Instruments, Inc. 

Capitol Vacuum 

Carl Zeiss Microscopy, LLC 

CeramTec North America 

COSMOTEC Corporation 

CVD Equipment Corporation 

Denton Vacuum LLC 

Duniway Stockroom Corporation 

Eagle Instrument Services 

Ebara Technologies 

Edwards Vacuum 

Elsevier (NY) 

ESI 

Current as of September, 2012 

AVS-59 

EXHIBITORS 

Company Name 

Extrel CMS 

FEI Company 

Friatec N.A. LLC 

Gamma Vacuum 

Glas-Col. 

HeatWave Labs Inc. 

Heidelberg Instruments, Inc 

Hiden Analytical, Inc. 

Hine Automation 

Horiba Scientific 

Huettinger Electronic 

Impedans Ltd. 

Inland Vacuum Industries, Inc. 

Innovative Vacuum Solutions Inc. 

InstruTech, Inc. 

Intel Corporation 

ION-TOF USA 

J.A. Woollam Co., Inc. 

Julabo USA, Inc. 

Kashiyama-USA Inc. 

Kemstream 

Kimball Physics Inc. 

KP Technology 

Kratos Analytical 

Kurdex Corporation 

Kurt J Lesker Company 

Labtec Sales Partners LLC 

Lam Research 

Mantis Deposition Ltd 

McAllister Technical Services 

McVac Manufacturing 

MDC Vacuum Products, LLC 

MEWASA North America, Inc. 

Micromatter 

MKS Instruments 

Mustang Vacuum Systems 

National Nanotechnology 

Infrastructure Network (NNIN) 

Nonsequitur Technologies 

Nor-Cal Products, Inc. 

Omicron Nanotechnology USA 

Omley Industries, Inc. 

Oxford Instruments - Austin 

Pfeiffer Vacuum Technology, Inc. 

PHPK Technologies 

Physical Electronics 

Physics Today - Exhibitor Lounge 

Phytron, Inc. 

Plasmaterials, Inc. 

37 

Company Name 

Plasma-Therm 

Precision Ceramics USA 

Precision Plus Vacuum Parts 

Prevac sp. z o.o. 

PVD Products 

R.D. Mathis Company 

RBD Instruments, Inc. 

Refining Systems 

RF VII Inc. 

RHK Technology Inc. 

Rocky Mountain Vacuum Tech., Inc. 

SAES Getters USA 

Scientific Instrument Services, Inc. 

Semicore Equipment, Inc. 

Semilab SDI LLC 

Shanghai Joysun Machinery & 

Electric Equipment Manufacture Co. 

Shimadzu Precision Instruments 

Shimadzu Scientific Instruments 

Solid Sealing Technology, Inc. 

SPECS Surface Nano Analysis, Inc. 

SPI Supplies 

Springer 

Staib Instruments 

Sumitomo (SHI) Cryogenics of America Inc. 

Super Conductor Materials 

Sycon Instruments, Inc. 

Synergy Systems Corporation 

Synergy Vacuum, Inc. 

Tech-X Corporation 

Ted Pella, Inc. 

Telemark 

TGM Inc. 

Thermionics Vacuum Products 

Thermo Scientific 

Torr Scientific 

Tracs Chillers 

Transfer Engineering & Manufacturing, Inc. 

Trek, Inc. 

UC Components 

Vacuubrand, Inc. 

Vacuum Research Corp. 

Value Mechanical & Electrical Products Co., Ltd. 

VAT 

VG Scienta 

Welch-Ilmvac 

Wiley 

Yugyokuen Ceramics Co., Ltd. 

Zeon Chemicals L.P. 

Bold Listings: 

Corporate Members & Sponsors

TECHNOLOGY SPOTLIGHT SESSIONS 

AVS Exhibitor Technology Spotlight Sessions 

Stage Area of Exhibit Hall - Booth 701 • Tampa Convention Center 

Twenty minute interactive presentations scheduled during the technical session breaks in the Stage Area of the exhibit hall. 

Gain insight to the latest technology, products and services offered by the exhibitors. 

Free Admission & Free AVS-59 Souvenirs while they last! 

TUESDAY, OCTOBER 30 

10:00AM CARL ZEISS 

ORION Nanofab: Fabricating sub 10 nm Nanostructures 

using the Helium Ion Microscope 

10:20AM ASYLUM 

AM-FM and Loss Tangent Imaging–Two New Tools for 

Quantitative Nanomechanical Properties 

12:00PM BRUKER 

Selecting the Best Metrology Method for Monitoring Thin 

Film Deposition 

12:20PM THERMO FISHER SCIENTIFIC 

Complementary Nature of XPS and Raman Techniques 

12:40PM THERMO FISHER SCIENTIFIC 

Multi-Dimensional XPS Profiling from Thermo Fisher 

Scientific 

1:00PM KRATOS ANALYTICAL 

Organic Depth Profiling using XPS – Pro’s and Con’s of 

Different Polyatomic Species 

1:20PM PHYSICAL ELECTRONICS 

The latest innovations in XPS, AES, and TOF-SIMS instrumentation 

from Physical Electronics will be presented. 

1:40PM SPECS SURFACE NANO ANALYSIS GmbH 

KolibriSensor and Tyto: New Milestones in Scanning 

Probe Microscopy 

3:20PM SAES GETTERS 

NEG Pumps Improving the Performance of Vacuum 

Systems 

3:40PM KURT J. LESKER COMPANY 

New Developments in Thin Film Deposition from Kurt J. 

Lesker Company® 

WEDNESDAY, OCTOBER 31 

10:00AM EDWARDS 

10:20AM BROOKS AUTOMATION 

Mass Spectrometer Now Supports Process Control 

38 

WEDNESDAY, OCTOBER 31 (Continued) 

12:00PM MANTIS DEPOSITION 

Nanoparticle Coating Technology for Vacuum 

Deposition 

12:20PM SEMICORE 

Using the Ipad in PVD Applications 

12:40PM ESI 

Physics-based Simulation for Semiconductor Processing 

Optimization 

1:00PM MEWASA NORTH AMERICA, INC. 

Passive Thermal Actuator 

1:20PM HUETTINGER 

Bipolar Technoloogy for AZO Sputtering 

1:40PM KP TECHNOLOGY 

Novel Dual Mode Air Photoemission and Kelvin Probe 

System for Work Function Analysis of Nanometer Films 

3:20PM HEIDELBERG 

Heidelberg Instruments microPG501, A Direct Write 

Lithography tool 

3:40PM PLASMA-THERM 

Dry Etching Enabling Surface Texturing for Thin 

Substrate Solar Cells 

THURSDAY, NOVEMBER 1: 

10:20AM BRUKER 

Selecting the Best Metrology Method for Monitoring 

Thin Film Deposition 

12:00PM MULTI-VENDOR PANEL DISCUSSION 

ON XPS IMAGING 

Join this special session featuring the leading manufacturers 

of XPS instrumentation as they present their own 

XPS imaging methods and advantages – as they see 

them! A Q&A session will follow to address audience 

questions and perhaps some bantering amongst the presenters 

themselves! 

This will be an exciting event – don’t miss it ! 

Participating Companies: 

KRATOS • PHYSICAL ELECTRONICS 

THERMO • OMICRON

What is the best 

gauge for the 10-11 

Torr Range? 

How do I control, 

eliminate water? 

ASK THE EXPERTS !!!!!! 

Troubleshooting Mysteries? 

Contamination Problems? 

System Configuration Questions? 

Just Wanna Make Your Vacuum Better? 

What is my RGA 

telling me? 

How do I detect 

a Virtual Leak? 

Problems with troubleshooting, process control, contamination or just want 

to bounce an idea off other people in the vacuum field? Maybe all our years 

of experience, successes and failures can help point you in the right direction 

or spark an idea! Ask the Experts is an unbiased, open forum with the 

resources and the desire to discuss and help solve vacuum related issues. 

Archives and online discussion forum 

year round at www.avs.org/forum.aspx 

39 

528 

Ask the Experts!... Exhibit Hall Booth #528 # 

Sponsored by Duniway Stockroom, SAES Getters & Brooks Automation 

Hosted by the AVS Vacuum Technology Division 

Free Gift 

for our visitors! 

while supplies last 

Exhibit Hall • Booth 528

SYMPOSIUM PLENARY LECTURE 

“The BP Oil Spill in the Gulf of Mexico: 

Are Microbes Helping to Clean up the Mess? 

Monday, October 29, 2012, 12:00 Noon 

Ballroom B, Tampa Convention Center 

Joel E. Kostka, Georgia Institute of Technology 

The Gulf of Mexico is more important to Americans than you might think. It provides 30% of GDP, 90% of 

offshore oil and gas, and 33% of seafood in the U.S, easily demonstrating that the economy of the Gulf is closely intertwined 

with the extraction and preservation of natural resources. The Deepwater Horizon (DH) accident resulted in a 

massive insult to already stressed Gulf ecosystems. While the immediate and acute effects of the DH oil spill have been 

intensively studied, chronic effects to Gulf ecosystems remain largely unknown. Only a fraction of the released oil and gas 

has been accounted for, making current research critical for finding out where the oil went and what long-term effects it will 

have on sensitive Gulf ecosystems. In addition, the risk of accidental oil discharge remains high for the foreseeable future as 

increased economic pressure to access new oil reserves in deep marine waters will require less tested technologies. It is not a 

question of “whether” another major spill will happen but rather “when” it will occur. Thus, current research will provide 

vital data and modeling in support improved response efforts for future spills. This presentation will report on more than 2 

years of research directed toward the fate and impacts of petroleum hydrocarbons from the DH discharge in coastal Gulf 

ecosystems. Further, the talk will discuss ongoing research by the Gulf of Mexico Research Initiative and the role of technological 

development in oil spill response efforts. 

D r. Kostka leads an internationally recognized research program in the areas of environmental microbiology and biogeochemistry, 

first at Florida State University and, now, at the Georgia Institute of Technology. He has served on 11 

national or international review panels for energy and environmental research and on the steering committee (as co- 

PI) of the FSU-led, $20 million consortium “Deep-C: Deepsea to Coast Connectivity in the Eastern Gulf of Mexico” 

funded by the Gulf of Mexico Research Initiative. In 2010, he served as co-PI on an NSF Rapid project studying the 

impact of Deepwater Horizon crude oil on biogeochemical processes in Florida sandy beaches. In 2011, Dr. Kostka coauthored 

a report from the American Academy of Microbiology entitled, “Microbes and Oil Spills: Frequently Asked 

Questions,” to provide science-based information to stakeholders on the importance of the microbiologically 

catalyzed biodegradation of oil in marine environments. He also serves as editor of the Journal of Applied and 

Environmental Microbiology and was recently named Chair of the Microbial Ecology Division of the American Society 

for Microbiology. 

40

TECHNICAL PROGRAM 

The AVS 59 th International Symposium and Exhibition will be 

held at the Tampa Convention Center in Tampa, FL, October 28 

through November 2, 2012. Once again our technical program is 

second to none, providing cutting-edge content over a very broad 

range of diverse yet complementary topics. Brief summaries of each 

program theme are provided below, with the full schedule of oral 

and poster presentations following them. Note the amazing list of 

distinguished invited speakers in each program. They represent the 

best and the brightest work from around the world, from industrial, 

academic, and governmental research labs. The end result is a program 

that consists of more than 1300 talks presented in over 140 

oral sessions and two evenings of poster sessions. Start filling your 

week’s schedule with must-see, career enhancing sessions. 

EXHIBITS 

This year’s exhibition showcases equipment and instrumentation 

needed to perform cutting edge research presented in our technical 

program. Visit the exhibit hall to speak to experts representing the 

very best in components, systems, instrumentation, services and consumables. 

The exhibit hall will be open Tuesday through Thursday, 

October 30-November 1. There are many attractions in the exhibit 

hall, including Exhibitor Technology Spotlight Sessions, the AVS 

Membership & Store, Career Center, Vacuum Technology Division’s 

“Ask The Experts” booth, E-Mail Pavilion, Free Caricatures, Free 

Massages, Art Zone/Contest, AVS History Booth, Free coffee, 

refreshments, lunches, daily raffles and more! During the Thursday 

lunch break, a special event of the Exhibitor Technology Spotlight 

Sessions will take place which will include a multi-vendor discussion 

featuring Kratos Analytical, Thermo, Physical Electronics and 

Omicron who will present their viewpoints on the best way to perform 

XPS Imaging. Grab some free lunch and go to the stage area of 

the exhibit hall to see this historic event! 

SHORT COURSES 

The Tampa Convention Center will be the site for the short 

course program where courses on a variety of topics will be offered. 

These courses will run concurrently with the AVS Symposium. 

TECHNICAL PROGRAM 

ADVANCED SURFACE ENGINEERING 

The Advanced Surface Engineering Division (SE) focuses its 

interest on new materials, technologies, characterization, manufacturing, 

applications, and fundamentals of surface engineering 

and coating technologies. The SE oral sessions at AVS 59 cover 

Pulsed Plasmas and HIPIMS/HPPMS, Atmospheric Pressure 

Plasmas and Treatments, as well as Multifunctional Nanostructured 

Coatings and Thin Films. These sessions provide a balance 

between fundamental understanding and applications of these 

topics. The presentations cover novel coating materials, processes, 

design and modeling, diagnostics and growth control, structural, 

chemical, and mechanical characterizations, wear, corrosion, 

and oxidation protection, thermal stability, and other 

aspects related to surface engineering and coatings. 

This year’s program features several invited and numerous 

contributed talks as well as contributions to the poster session on 

Tuesday evening. Our program starts on Monday with two joint 

sessions with the Nanometer-Scale Science and Technology 

Division on Nanostructured Thin Films and Coatings. The morning 

session on Interface Aspects opens with an invited lecture by 

David Rafaja from Freiberg, Germany, on “Interface Phenomena 

41 

in Nanostructured Thin Films and Coatings”. The afternoon session 

deals with Multifunctional Properties of Nanostructured 

Thin Films and Coatings, with Samir Aouadi from Southern Illinois 

University, Carbondale, being invited to speak on "Layered 

Binary Metal Oxide Solid Lubricants for High Temperature 

Moving Assemblies" and Ali Shakouri from Birck Nanotechnology 

Center, Purdue University, on “Cost Efficiency Trade Off in 

Nanostructured Thermoelectric Energy Conversion Systems”. 

Our session on Tuesday morning on Pulsed Plasmas in Surface 

Engineering will feature an invited talk by Andre Anders, 

Lawrence Berkeley National Laboratory, entitled “Strong Localization 

of Ionization in High Power Impulse Magnetron Sputtering 

in Reactive and Non-Reactive Gas Environments”. The 

afternoon session is devoted to Atmospheric Pressure Plasmas, 

starting with the invited talk of Mounir Laroussi, Old Dominion 

University on “Plasma Medicine: The Journey of a New Field of 

Research, from Killing of Bacteria to Killing of Cancer Cells”. 

In addition to these topics, the Advanced Surface Engineering 

Session cosponsors additional sessions with the Tribology Focus 

Topic. 

CODE SESSION 

SE+NS-MoM Nanostructured Thin Films and Coatings I: Interface 

Aspects 

David Rafaja, Freiberg U of Technology, Germany 

SE+NS-MoA Nanostructured Thin Films and Coatings II: Multifunctional 

Properties 

Samir Aouadi, Southern Illinois Univ Carbondale 

Ali Shakouri, Birck Nanotechnology Ctr, Purdue U 

SE+PS-TuM Pulsed Plasmas in Surface Engineering 

Andre Anders, Lawrence Berkeley National Lab 

SE+PS-TuA Atmospheric Pressure Plasmas 

Mounir Laroussi, Old Dominion University 

SE-TuP Advanced Surface Engineering Poster Session 

APPLIED SURFACE SCIENCE 

The Applied Surface Science Division (AS) provides a forum 

for the discussion of state of the art surface analysis instrumentation 

and data analysis protocol which are required to analyze and 

understand the surface and/or interfacial properties of materials. 

The 2012 AS program runs the entire week and features a mix of 

core sessions (Quantitative Surface Chemical Analysis) as well 

as new sessions (Surface Analysis using Synchrotron Techniques). 

AS is co-sponsoring the Sunday night Biomaterials Plenary 

Session and strongly supporting the AVS Focus Topics in 

2012. AS is leading a new Focus Topic on Scanning Probe 

Microscopy, leading the In-Situ Microscopy and Spectroscopy 

Focus Topic, and contributing to many of the other 2012 Focus 

Topics. We are excited to be co-sponsoring sessions with the 

Biomaterial Interfaces, Surface Science, Nanometer-scale Science 

and Technology, Thin Films, and Vacuum Technology 

Divisions. Everyone is welcome to attend our Tuesday night AS 

business meeting which will have short capsule presentations by 

our student award finalists, and a workshop (co-sponsored by 

the ASTM E42 Committee on Surface Analysis) entitled “XPS 

and beyond: ISS, UPS, HIM, APT and other TLAs (Three Letter 

Acronyms)”. AS will be hosting Quantitative Surface Analysis 

14 (QSA 14) on Sunday Oct 28 in Room 20 of the Convention 

Center; the theme of QSA 14 is 2D and 3D Nanomaterials 

Analysis. QSA 14 will run from 7:30 am through 4 pm. The

cost for QSA 14 is $115 for full attendee and $70 for students 

(fee includes continental breakfast, two snacks, lunch, and lively 

discussions!). QSA registration is being managed within the 

AVS Symposium registration site; when you register to attend 

the AVS 59th Annual Symposium and Exhibition, you have the 

option of registering for QSA 14. We are not accepting on-site 

registration for QSA 14. We look forward to seeing you in 

Tampa Florida October 28-November 2, 2012. 

CODE SESSION 

AS-MoM Quantitative Surface Chemical Analysis, Technique 

Development, and Data Interpretation - Part 1 

Sven Tougaard, Univ of Southern Denmark* 

Peter Sherwood, Oklahoma State University 

AS-MoA Quantitative Surface Chemical Analysis, Technique 


Wayne Jennings, Case Western Reserve Univ 

AS+BI-TuM Practical Surface Analysis 

Juergen Schnekenburger, Muenster U, Germany 

AS+BI-TuA Surface Analysis of Materials Using Vibrational 

Techniques (2:00-3:20 pm)/Multi-Technique 


Sriram Subramaniam, Natl Cancer Inst, NIH 

AS-TuP Applied Surface Science Poster Session 

AS-WeM Surface Analysis of Biological Materials Using 

Vibrational & Non Linear Optical Spectroscopy 

Techniques (8:00-10:00 am)/3D Imaging & 

Nanochemical Analysis-Part 1 (10:40 am-12:00 pm) 

Patrick Koelsch, University of Washington 

Thomas Taubner, RWTH Aachen Univ, Germany 

Stuart Stock, Northwestern University 

AS+NS+SS+ 3D Imaging & Nanochemical Analysis - Part 2 

TF-WeA (2:00-3:20 pm)/Advanced Data Analysis and 

Instrument Control (4:00-6:00 pm) 

Emmanuelle Marquis, University of Michigan 

Max Diem, Northeastern University 

AS-ThM Applications of Large Cluster Ion Beams 

John Vickerman, The Univ f Manchester, UK 

AS-ThA Applications of Large Cluster Ion Beams - Part 2 

(2:00-3:20 pm)/Surface Analysis using Synchrotron 

Techniques (3:40-5:40 pm) 

Joseph Woicik, NIST 

AS+TF+VT-FrM Surface Analysis using Synchrotron Techniques 

Laszlo Kövér, MTA ATOMKI, Hungary 

BIOMATERIAL INTERFACES 

In the tradition of the In the tradition of the Biomaterial Interfaces 

Division (BID), a broad technical program has been established 

that is focused on progress in biointerface science and 

engineering which brings together an interdisciplinary group of 

experts at the intersection of biosurface and interface science, 

the nanosciences, and biomedical engineering. 

The BID program will commence on Sunday afternoon with 

the Biomaterials Plenary (BP) session joining with the Applied 

Surface Science (AS) division with the theme “Bioimaging: in 

vacuo, in vitro, in vivo”, exploring the challenges involved with 

imaging of cells, tissues and the biochemical processes contained 

within. The event features invited presentations from 

*Albert Nerken Award Winner 

42 

DaeWon Moon (KRISS), Gerd Schneider (BESSY) and Stefan 

Hell (MPI), exploring the most recent developments in the application 

of a range of techniques to the bioimaging challenge, 

including ToF SIMS and MALDI imaging, Xray spectro-microscopic 

imaging, optical super resolution techniques and CARS 

for following processes in vivo. 

This will be followed with the opportunity for further discussion 

at our regular industry sponsored Plenary Reception, which 

is a great opportunity to meet old friends and new in preparation 

for the week ahead. 

CODE SESSION 

BP+AS-SuA Biomaterials Plenary - Bioimaging: In Vacuo, In 

Vitro, In Vivo 

Stefan Hell, Max-Planck-Institut für Biophysikalische 

Chemie, Germany 

DaeWon Moon, Korea Research Institute of 

Standards and Science 

Gerd Schneider, Helmholtz-Zentrum Berlin für 

Materialien und Energie GmbH, Germany 

BI-MoM Surfaces to Control Cell Response 

Lance Kam, Columbia University 

Joachim Spatz, Max Planck Inst for Intelligent 

Systems & Unive of Heidelberg, Germany 

BI-MoA Cell-Surface Interactions: High Throughput 

Methodologies 

Matthias Lutolf, École Polytechnique Fédérale 

de Lausanne, Switzerland 

Carl Simon, NIST 

BI+SS+AS-TuM Biomolecules at Interfaces 

Thomas Arnebrant, Malmö University, Sweden 

Rein Ulijn, University of Strathclyde, UK 

BI+AS-TuA Characterization of Biointerfaces 

Sebastian Maerkl, Ecole Polytechnique 

Fédérale de Lausanne (EPFL), Switzerland 

Buddy Ratner, University of Washington 

BI-TuP Biomaterial Interfaces Poster Session 

BI+SS+NS-WeM Bio/Nano Interfaces with Applications in Biomedicine 

and Energy 

Vincent Rotello, University of Massachusetts 

ELECTRONIC MATERIALS AND PROCESSING 

The Electronic Materials and Processing Division (EMPD) 

encompasses the science and engineering of materials and interfaces 

that advance device technology. EMPD will sponsor eleven 

oral sessions containing 100 talks and a poster session on electronic 

materials synthesis, processing, characterization, and structureproperty 

relationships. Researchers from around the world will present 

their work on advanced logic and ultra-dense memory devices 

as well as ultra low power, opto-, and nano-electronics. The themes 

include electronic, optical, and magnetic properties, interface and 

defect engineering, and novel materials properties and processing 

techniques. Six sessions are devoted to high-k, low-k, and memory 

dielectrics and defects in materials. Highlights include papers by 

Bob Wallace (UT Dallas) on surface preparation and dielectric 

growth for graphene-based devices, Clement Merckling (IMEC) on 

next generation semiconductors for advanced CMOS, Takashi 

Ando (IBM) on ultimate scaling of high-k gate dielectrics, Hideki 

Hasegawa (Hokkaido), one of the early stalwarts of dielectrics on

III-Vs, on Fermi level pinning phenomena at III-V high-k MOS 

interfaces, Greg Hughes (Dublin) on high energy XPS and electrical 

characterization of MOS structures on Si, GaAs and InGaAs, 

Leonard Register (UT Austin) on a novel TFET based on roomtemperature 

superfluidity in graphene double layers, and Zsolt 

Tokei (IMEC) on interconnect scaling for 10 nm and beyond. In the 

area of novel devices and ultra-dense memory, Neil Goldsman 

(Maryland) will give a talk on micro-antenna coupled nano-MIM 

diodes. Zlatko Sitar (NC State) will lead off a session on Group IIInitrides 

with a talk on AlN-based technology for deep UV and highpower 

applications. A session devoted to semiconductor heterostructures 

features James Speck (UC Santa Barbara) on heteroepitaxial 

lattice mismatch stress relaxation in nonpolar and semipolar GaN 

by dislocation glide and Gene Fitzgerald (MIT) on engineered substrates 

and lattice mismatched semiconductor devices. On ultra low 

power electronics, Meishoku Masahara (AIST) will describe an 

advanced FinFET process for 22nm and beyond. A new session this 

year on Heusler alloys features a talk by Jeffrey Childress (HGST) 

on application of magnetic Heusler alloys for ultrahigh-density 

magnetic recording. In the nanoelectronics area there are featured 

talks by Roberto Paiella (BU) on tensily strained Ge nanomembranes 

for applications in Group IV infrared photonics and John 

Rogers (Illinois) on semiconductor nanomembranes for biomedical 

applications as well as talks by Gregory Lopinski (NRC) on electrical 

transport on SOI substrates and Christian Lavoie (IBM) on scaling 

silicide contacts. The featured talks in hybrid materials this year 

are Michael Zharnikov (Heidelberg) on electron beam chemical 

lithography and Jiangeng Xue (Florida) on polymer-colloidal 

nanocrystal hybrid materials for photovoltaic applications. 

CODE SESSION 

EM+TF+OX+ High-k Dielectrics for MOSFETs I 

GR-MoM Serge Oktyabrsky, University at Albany-SUNY 

John Robertson, Cambridge University, UK 

Robert Wallace, University of Texas at Dallas 

EM+TF+OX+ High-k Dielectrics for MOSFETs II 

GR-MoA Takashi Ando, IBM T.J. Watson Research Center 

Clement Merckling, IMEC, Belgium 

EM-TuM Electrical Testing and Defects in III-V’s 

Hideki Hasegawa, Hokkaido U and RIKEN, Japan 

Greg Hughes, Dublin City University, Ireland 

Patrick Lenahan, Pennsylvania State University 

EM-TuA Materials and Processes for Advanced Interconnects 

Zsolt Tokei, IMEC, Belgium 

EM+TF-WeM Hybrid Electronic Materials and Interfaces 

Jiangeng Xue, University of Florida 

Michael Zharnikov, Univ of Heidelberg, Germany 

EM+OX-WeA Oxides and Dielectrics for Novel Devices and Ultradense 

Memory 

Neil Goldsman, U of Maryland, CoolCAD Electronics 

Leonard Register, University of Texas at Austin 

Grace Xing, University of Notre Dame 

EM+SS+AS+ Nanoelectronic Interfaces, Materials, and Devices 

NS-ThM Roberto Paiella, Boston University 

John Rogers, Univ of Illinois at Urbana Champaign 

EM-ThM Processing for Ultra Low Power Electronics + Semiconductor 


Meishoku Masahara, Natl Institute of AIST, Japan 

James Speck, Univ of California, Santa Barbara 

EM+MI-ThA Semiconductor Heterostructures II + Heusler Alloys 

Jeffrey R. Childress, HGST San Jose Research Ctr 

Eugene Fitzgerald, Massachusetts Institute of Tech 

43 

EM+TF+AS-ThA Growth and Characterization of Group III-Nitride 

Materials 

Zlatko Sitar, HexaTech & North Carolina State U 

Christian Wetzel, Rensselaer Polytechnic Institute 

EM-ThP Electronic Materials and Processing Poster Session 

EM+NS-FrM Low-Resistance Contacts to Nanoelectronics 

Christian Lavoie, IBM T.J. Watson Research Ctr 

Gregory Lopinski, Natl Research Council of 

Canada 

MAGNETIC INTERFACES AND NANOSTRUCTURES 

The Magnetic Interfaces and Nanostructures Division (MI) program 

features pioneering, controversial, introductory and emerging 

results in topical areas related to magnetic interfaces and nanostructures. 

The 2012 MI program topics include: (1) fundamental problems 

in magnetism (e.g., are half-metals half-metallic, reduced 

dimensionality, accounting for and understanding d and f correlation); 

(2) the forefront of topological insulators; (3) future spintronics, 

magnetoelectrics, Rashba interactions and all things multiferroic; 

(4) new probes in magnetic imaging and characterization; (5) 

biological and molecular-based magnetism; (6) Applications of 

polarized neutron reflectometry; (7) Spin dynamics in confined 

structures. 

The 2012 program highlights electron spin related phenomena at 

the crossroad of basic and applied science. We are also co-sponsoring 

the Actinides and Rare Earths (AC), Spins in Graphene (GR), 

Oxide Interfaces and Heterostructures (OX), and Scanning Probe 

Microscopy (SP) focus topics. Noted invited speakers anchor each 

of these topics and topical conferences. The Magnetic Interfaces 

and Nanostructures Division will be selecting the best graduate student 

presentation from three finalists for the Leo Falicov Award. 

The winner of this award will be announced during the break of the 

Thursday morning session. The division will also offer an award for 

postdoctoral fellows who will be presenting MIND papers at this 

year’s International Symposium. 

CODE SESSION 

MI+EN+ Fundamental Problems in Magnetism 

BI-TuA Samuel D. Bader, Argonne National Laboratory 

and Northwestern University 

Yuping Bao, The University of Alabama 

Claudia Mewes, University of Alabama 

MI-WeM Topological Insulators and Rashba 

Paolo Moras, Istituto di Struttura della Materia- 

CNR, Trieste, Italy 

Oliver Rader, Helmholtz-Zentrum Berlin für 

Materialien und Energie, Germany 

Tonica Valla, Brookhaven National Laboratory 

MI+OX-WeA Spintronics, Magnetoelectrics, Multiferroics 

Dmytro Apalkov, Grandis, Inc. 

Jian-Ping Wang, University of Minnesota 

MI+SP+AS-ThM Emerging Probes in Magnetic Imaging, Reflectometry 

and Characterization 

Amlan Biswas, University of Florida 

Casey Miller, University of South Florida 

Volker Rose, Argonne National Laboratory 

Kristiaan Temst, KU Leuven, Belgium 

MI-ThP Magnetic Interfaces and Nanostructures 

Poster Session

MANUFACTURING SCIENCE AND TECHNOLOGY 

This year, the Manufacturing Science and Technology Group 

will concentrates on the nano-manufacturing challenges in today’s 

industry in addition to the usual interest on the Spectroscopic Ellipsometry 

Focus Topic. The challenges facing the nano-manufacturing 

methods, processes, and systems represent an inherently multidisciplinary 

set of problems addressing issues that must combine 

the range of top-down and bottom-up processes available in order to 

provide multi-scale systems integration. To achieve the necessary 

economy of scale for large-scale production, new concepts and 

principles must be envisioned to achieve revolutionary transformation 

of the existing manufacturing infrastructure. The critical challenges 

for nano-manufacturing are the need to control assembly of 

processing nanoscale structures in high-rate/high-volume applications 

without compromising their inherent properties; and to ensure 

the long-term reliability of nanostructures through testing and metrics. 

MSTG will co-sponsor the nanomanufacturing Focus Topic, 

and emphase on the metrology, defect characterization, scalable 

devices and processes, ALD, and environmental issues. 

CODE SESSION 

NM+AS+ Metrology & Environmental Issues in Nanomanufacturing 

MS-MoM Henry Everitt, U.S. Army Aviation and Missile 

Research Development and Engineering Center 

Vicki Grassian, University of Iowa 

James Liddle, NIST 

Sherine Obare, Western Michigan University 

NM+NS+MS+ ALD and Scalable Processes for Nanomanufacturing 

EM-MoA Maitreyee Mahajani, Applied Materials Inc. 

James Watkins, University of Massachusetts 

NM+MS-TuM All Invited Session: Challenges of Nanomanufacturing 

from an Industrial Perspective 

Michael Hunter, Liquidia Technologies, Inc. 

David Lazovsky, Intermolecular, Inc. 

Akihisa Sekiguchi, Tokyo Electron Limited 

NM-TuP Topics in Nanomanufacturing Poster Session 

MEMS AND NEMS 

The MEMS and NEMS Technical Group (MN) program will highlight 

recent advances in emerging areas of micromechanical systems 

at the micro and nanoscale ranging from fundamental studies of functional, 

integrated devices to novel applications of micro and nanoelectromechanical 

systems (MEMS/NEMS). This year’s session will 

cover many interesting areas which are thematically related to characterization 

of surfaces and interfaces in MEMS/NEMS, probing 

dynamical surface and interfacial effects in micro and nanoelectromechanical 

systems, multi-scale interaction of materials with focus 

directed towards e-beam and ion beam lithography, pattern transfer 

and fabrication at the micro- and nano-scale including focused ion 

beam based micromachining, along with a newly introduced session 

on optomechanics involving optical actuation of photonic crystal 

nanocavities and membranes in fabricating photonics MEMS and 

NEMS. The core topic of discussion includes effect of stress in quality 

factor and mechanical dissipation is MEMS resonators, fabrication 

of ultrafast nanomechanical switches based on advanced materials 

such as SiC and ultrananocrystalline diamond, use of focused ion 

beam technique to pattern and integrate nanophotonic elements on a 

MEMS platform, and controlling mechanical actuation in photonic 

MEMS using light. 

44 

CODE SESSION 

MN+AS-MoM Characterization of Surfaces and Interfaces in MEMS 

and NEMS 

Philip Feng, Case Western Reserve University 

MN-MoA Multi-scale Interactions of Materials and Fabrication 

at the Micro- and Nano-scale 

Jeevak Parpia, Cornell University 

MN-TuM Optomechanics and Photonic MEMS and NEMS 

Il Woong Jung, Argonne National Laboratory 

Marko Loncar, Harvard University 

MN-TuP MEMS and NEMS Poster Session 

NANOMETER-SCALE SCIENCE AND 

TECHNOLOGY 

The Nanometer-scale Science and Technology Division (NS) 

explores the rapidly evolving science and technology enabled by 

nanoscale structures. Researchers from around the globe will present 

their work on topics ranging from fabricating atomically precise 

devices to exploiting nanomaterials for applications in 

nanophotonics, catalysis, and biological sensing. Multiple themes 

will be developed such as synthesis and characterization of zerodimensional 

nanoparticles and quantum dots, one-dimensional 

nanowires and nanotubes, and two-dimensional nanomaterials. We 

have invited leading figures who will provide perspective from the 

forefront of their respective fields and will highlight the sessions on 

nanoscale imaging and microscopy, nanopatterning and nanolithography, 

nanoscale catalysis and surface chemistry, nanoparticles and 

quantum structures, nanowires and nanotubes, nanomaterials in two 

and three dimensions, and nanophotonics and plasmonics. Additional 

co-sponsored sessions cover the areas of manufacturing 

nanoscale devices, nanostructures for energy conversion and storage, 

nanomechanics, nanotribology, graphene synthesis and applications, 

transparent conductors, printable electronics, and in-situ 

scanning probe microscopy and spectroscopy. 

CODE SESSION 

NS-MoM Nanoparticles and Quantum Structures 

Michelle Simmons, U of New South Wales, 

Australia 

NS+SP-MoA Nanopatterning and Nanolithography 

Armin Knoll, IBM Research-Zurich, Switzerland 

NS+EN-TuM One-Dimensional Nanowires and Nanotubes 

Mathias Steiner, IBM TJ Watson Research Ctr 

NS+EN+GR-TuA Nanomaterials in Two and Three Dimensions 

Manish Chhowalla, Rutgers University 

Hanadi Sleiman, McGill University, Canada 

NS+AS+SS+ Nanoscale Catalysis and Surface Chemistry 

SP-WeM Flemming Besenbacher, Aarhus Univ, Denmark 

Michael White, Brookhaven National Lab 

NS-WeA Nanophotonics and Plasmonics 

Markus Raschke, University of Colorado 

Richard Van Duyne, Northwestern University 

NS-ThM Nanoscale Imaging and Microscopy 

Markus Heyde, Fritz-Haber-Institute, Germany 

NS-ThP Nanometer-scale Science & Technology Poster 

Session

PLASMA SCIENCE AND TECHNOLOGY 

This year’s PSTD program provides a stimulating forum showcasing 

the latest breakthroughs in plasma science and technology. 

Our program offers a diverse array of 16 core and co-sponsored oral 

sessions, complemented by a poster session that will report on the 

state-of-the art developments in both established and emerging 

fields of plasma research and application. Highlights include an 

overview of the grand challenges in the field of plasma etching and 

will be presented by last year’s Plasma Prize winner Richard 

Gottscho from LAM. In addition, recent key developments in the 

field of BEOL and FEOL plasma etching will be given by Jane 

Chang (UCLA) and Cathy Labelle (GlobalFoundries). The closely 

related field of damage free processing will be covered by a talk of 

MunPyo Hong of Korea University and new prospects on disruptive 

plasma technology will be presented by Keizo Kinoshita (Tohoku 

University, Japan) in his talk Plasma Process Developments for 

Spintronics Devices. The growth of research and interest in atmospheric 

plasma processing is reflected by the offering of three sessions 

on this important topic. Invited talks on microplasmas and 

their applications will be presented by Gary Eden (University of 

Illinois at Urbana Champaign) and Jeffrey Hopwood (Tufts University), 

while a session on their use in biological applications will be 

highlighted by EunHa Choi (Kwangwoon University, Republic of 

Korea) and Toshiro Kaneko (Tohoku University, Japan). Finally, 

the use of atmospheric plasmas used for roll to roll processing of 

materials including flexible substrates will be discussed in invited 

contributions discussed in talks by Kiyoshi Yasutake (Osaka University, 

Japan) and Geun Young Yeom (Sungkyunkwan University 

& SKKU Advanced Institute of Nano Technology (SAINT), 

Korea). The session on Plasma Deposition with start with an invited 

talk by Mariadriana Creatore (Eindhoven University of Technology, 

The Netherlands) with the intriguing title Looking Down the Rabbit 

Hole: Impact of Porosity in Plasma-deposited Inorganic Layers on 

Their Moisture Permeation Barrier Performance. This strong program 

is capped off by strong sessions covering the latest advances 

in new plasma sources and diagnostics. New developments in the 

design of 450 mm plasma processing tools will be addressed in the 

invited talk Study on Microwave ECR Plasma Source for 450-mm 

Wafer Etching given by Kenji Maeda (Hitachi, Ltd., Japan), The 

talk by Paola Diomede (University of Houston) Tailored Ion Energy 

Distributions on Plasma Electrodes in the Plasma Modeling session 

emphasizes the important role of controlling the ion energy distribution. 

Invited talks in two sessions on Plasma Diagnostics, Sensors 

and Control deal with Time resolved laser induced fluorescence on 

argon plasmas by Jose-Maria Palomares Linares (Eindhoven University 

of Technology, The Netherlands) and Mark Sobolewski 

(NIST) on Monitoring Plasma Etch Processes with Wave Cut-Off, 

Langmuir, and Radio-Frequency Probes. Plasma-surface interaction 

under extreme plasma conditions will be discussed by Gregory 

De Temmerman (FOM Institute DIFFER, Netherlands) in his talk 

entitled Surface Modifications Induced by Extreme Fluxes of Low- 

Energy Ions whereas Kenji Ishikawa (Nagoya University, Japan) 

will discuss the sensitive detection of free radicals on the surface in 

his talk Real time In Situ Electron Spin Resonance (ESR) Study of 

Free Radicals on Materials Created by Plasmas. 

CODE SESSION 

PS+EM-MoM Atmospheric Plasma Processing and Micro Plasmas 

Gary Eden, U of Illinois at Urbana Champaign 

Jeffrey Hopwood, Tufts University 

PS-MoM Advanced FEOL/Gate Etching 1 

Jane Chang, University of California, Los Angeles 

45 

PS+BI-MoA Applications of (Multiphase) Atmospheric Plasmas 

(including Medicine and Biological Applications) 

EunHa Choi, Kwangwoon U., Republic of Korea 

Toshiro Kaneko, Tohoku University, Japan 

PS2-MoA Plasma Modeling 

Paola Diomede, University of Houston 

PS1-TuM Plasma Diagnostics, Sensors and Control 1 

Mark Sobolewski, NIST 

PS2-TuM Advanced FEOL/Gate Etching 2 

Richard Gottscho, Lam Research 

PS1-TuA Plasma Deposition and Plasma Enhanced ALD 

Mariadriana Creatore, Eindhoven University of 

Technology, The Netherlands 

PS2-TuA Plasma Surface Interaction during Plasma Etching 

Kenji Ishikawa, Nagoya University, Japan 

PS+TC-WeM Atmospheric Plasma Processing for PV, Flexible 

Electronics (incl. R2R) 

Kiyoshi Yasutake, Osaka University, Japan 

Geun Young Yeom, Sungkyunkwan University & 

SKKU Advanced Institute of Nano Technology 

(SAINT), Korea 

PS-WeM Advanced BEOL/Interconnect Etching 

Catherine Labelle, GLOBALFOUNDRIES 

PS1-WeA Plasma Diagnostics, Sensors and Control 2 

JoseMaria Palomares Linares, Eindhoven Univ of 

Technology, the Netherlands 

PS2-WeA Plasma Surface Interactions during PECVD and Plasma 

Surface Modification 

Gregory De Temmerman, FOM Inst DIFFER, 

Netherlands 

PS1-ThM Plasma Processing for Disruptive Technologies 


Keizo Kinoshita, Tohoku University, Japan 

PS2-ThM Low Damage Processing 

MunPyo Hong, Korea University 

PS-ThA Plasma Sources 

Kenji Maeda, Hitachi, Ltd., Japan 

PS-ThP Plasma and Technology Poster Session 

SURFACE SCIENCE 

The Surface Science Division (SS) provides a forum for cuttingedge 

research that involves solid surfaces and interfaces. Phenomena 

that take place at the gas-solid and liquid-solid interfaces are prominent 

within the Division programs. Technical sessions address 

atomistic, electronic and chemical phenomena at surfaces and interfaces, 

their impact on materials properties, and their implication for 

technology and environmental processes. 

Surface Chemistry is an important divisional theme, encompassing 

the kinetics and dynamics of chemical events at surfaces, from 

adsorption and reaction to catalysis. Lively sessions devoted to a 

number of themes, including nonequillibrium processes , catalysis, 

and nanoscience. Surface science applications in high-impact areas 

- particularly energy science, nanotechnology, and environmental 

science - are prominent at the 2012 Symposium: The latest findings 

in reaction activation and mechanism of energetic processes are 

showcased in sessions devoted to surface photocatalysis, chemical 

reaction, catalysis and dynamics. The impact of nanoparticle shape,

size, and composition on reaction selectivity is explored in papers 

based upon direct experiment and computational surface science. 

Sessions are devoted to liquid/surface interaction, chirality and 

electronic features of molecular films, and synthesis and characterization 

of oxide materials. Several sessions describe experimental 

and theoretical studies of nanoparticles and nanostructures, including 

atomic scale imaging of nanowires, surface photochemistry of 

metal nanoparticles and structure and reactivity of nanocatalysts 

in operando conditions. The Surface Science Division is also 

co-sponsoring focused sessions on graphene growth, actinides, 

photocatalysis and solar fuels, in-situ microscopy, and spectroscopy 

of interfacial chemistry/catalysis, biomolecules at interfaces, 3D 

imaging and nanochemistry, and bio/nano interfaces. 

The Morton M. Traum Surface Science Student Award is presented 

for the best student paper submitted to any session sponsored 

or jointly sponsored by the Surface Science (SS) Division at the 

AVS International Symposia. The Tuesday Evening Poster Session 

features the presentations of the Mort Traum Student Award Finalists. 

The 2012 Winner will be announced in the Traum Student 

Award Ceremony, to be held Thursday at noon immediately following 

the Thursday morning session. 

CODE SESSION 

SS-MoM Nonequillibrium and Nonlinear Processes 

Hermann Nienhaus, U of Duisburg-Essen, 

Germany 

John Tully, Yale University 

SS-MoA Surface Dynamics 

Gilbert Nathanson, University of Wisconsin- 

Madison 

SS-TuM Surface Reactivity of Oxides 

Zdenek Dohnalek, Pacific Northwest National Lab 

SS+NS-TuA Reactivity of Size and Shape Selected Nanoparticles 

Brian Hayden, University of Southampton, UK 

Dietrich Menzel, Fritz-Haber Institut, and 

Techn. Univ. Muenchen, Germany* 

Beatriz Roldan Cuenya, University of Central 

Florida 

SS-TuP Surface Science Poster Session 

SS+OX-WeM Synthesis and Characterization of Oxides 

Xiaoqing Pan, University of Michigan 

SS-WeM Chemisorption on Metallic Surfaces 

SS+EM-WeA Semiconductor Surfaces 

Yves Chabal, The University of Texas at Dallas* 

Paul Koenraad, Eindhoven U of Technology, 

Netherlands 

SS-WeA Catalysis on Metals and Alloys 

Simon Bare, UOP LLC, a Honeywell Company 

Donna Chen, University of South Carolina 

SS+EN+OX-ThM Catalysis and Photocatalysis on Oxides 

Kazunari Domen, The University of Tokyo, Japan 

SS-ThM Molecular Films: Chirality & Electronic Features 

Robert Hamers, Univ of Wisconsin-Madison 

Charles Sykes, Tufts University* 

SS+NS-ThA Surface Science of Nanostructures 

Anders Mikkelsen, Lund University, Sweden 

SS-ThA Liquid/Surface Interactions 

Bruce Kay, Pacific Northwest National Lab 

*Gaede-Langmuir Award Winner 

*Medard W. Welch Award Winner 

*Peter Mark Memorial Award Winner 

46 

THIN FILM 

The 2012 Thin Film (TF) Division Program offers 13 core oral 

sessions, several co-sponsored sessions, and a poster session. A 

broad range of outstanding invited speakers will touch on topics 

across the gamut of thin film science and technology. TF will continue 

to highlight the core Atomic Layer Deposition (ALD) sessions 

focusing on Energy Applications, Reactions and Film Properties, 

ALD Enabled Applications, Hybrid Films, and Bioapplications. 

Other stimulating advances in thin films will be highlighted in sessions 

on Growth and Characterization, Modeling and Analysis of 

Thin Films, Nanostructuring Thin Films, Glancing Angle Deposition 

(GLAD), and Applications of Self Assembled Monolayers and 

Layer-by-Layer (LbL) Assemblies. Exciting new additions to the 

program include Thin Films for Encapsulation, Packaging, and Biomedical 

Devices, and Thin Films for Memory and Data Storage. TF 

will continue its rich involvement in energy applications with contributions 

to sessions on Energy Storage, Photovoltaics, Chalcogenide 

Solar Cells, and Solar Fuels in the Energy Frontiers Focus 

Topic. In addition, TF leads organizing a Focus Topic on Spectroscopic 

Ellipsometry. TF will also contribute co-sponsored sessions 

on Graphene, Electronic Materials, Plasma Deposition and Processing, 

Nanomanufacturing, Oxide Heterostructures, Rare Earth and 

Actinide Materials, 3D and Synchrotron Radiation Analysis of Thin 

Films. A Thin Films Poster Session held on Thursday evening will 

cover a diverse range of topics drawn from all the TFD sessions. 

TF is proud to host many distinguished invited speakers for these 

sessions. The ALD sessions feature Frank Greer of Jet Propulsion 

Laboratory/California Institute of Technology speaking on ALD for 

astronomy and space applications, Jeffrey Elam from Argonne 

National Laboratory speaking on ALD for the synthesis of nanostructured 

catalysts, and Simon Elliott of Tyndall National Institute 

presenting on growth simulations for ALD. Thin Film and Growth 

and Characterization sessions will feature Ayodhya Tiwari from 

EMPA, Switzerland, speaking on CdTe solar cells, Patrice Raynaud 

of University Paul Sabatier, France, discussing on gas and solid 

phase reactions during thin film growth, and the Paul Holloway 

award talk. A session on Modeling and Analysis of Thin Films will 

host both Peter Cummings from Vanderbilt University and Donald 

Brenner of North Carolina State University. Peter will discuss 

nanoconfined fluids in supercapacitors and Don will be discussing 

thermodynamics of film deposition on fuel rods. We expect another 

year of an exciting session on Glancing Angle Deposition 

(GLAD) featuring Fred Schubert from Rensselaer Polytechnic Institute, 

speaking on tunable-refractive-index materials. Nanostructuring 

Thin Films will highlight Kostya Ostrikov from CSIRO Materials 

Science and Engineering, Australia, who will be discussing plasma 

effects in nanostructuring thin films. Applications of Self 

Assembled Monolayers and Layer-by-Layer (LbL) Assemblies will 

feature Graham Leggett of University of Sheffield, presenting on 

light-directed nanosynthesis. New to this year is an exciting session 

on Thin Films for Encapsulation, Packaging, and Biomedical 

Devices that will feature Peter Carcia of DuPont Central Research 

and Development, who will be discussing Ultra-barrier Technology 

for Moisture-Sensitive Electronics. In addition, TF will highlight a 

new session on Thin Films for Memory and Data Storage that will 

host two invited speakers: Dr. Sylvain Maitrejean of CEA Leti, 

speaking on materials and processes for phase change memories, 

and Randall Victora from University of Minnesota who will speak on 

spin transport properties and applications in magnetic multilayers. 

This year’s TF program is keeping up with the rapidly changing 

field of thin films. Come join us at these sessions.

CODE SESSION 

TF-MoM ALD Enabled Applications 

Frank Greer, Jet Propulsion Laboratory/ 

California Institute of Technology 

TF+EN-MoA ALD for Energy 

Jeffrey Elam, Argonne National Lab 

TF-TuM ALD Reactions and Film Properties 

Simon Elliott, Tyndall National Inst, Ireland 

TF+AS-TuA Modeling and Analysis of Thin Films 

Donald Brenner, North Carolina State Univ 

Peter Cummings, Vanderbilt University 

TF2-TuA ALD for Hybrid Films and Bioapplications 

Jingwei Bai, IBM Res Div, T.J. Watson Res Ctr 

TF+SE+NS-WeM Glancing Angle Deposition (GLAD) 

E. Fred Schubert, Rensselaer Polytechnic Inst 

TF-WeM Thin Films for Encapsulation, Packaging, and 

Biomedical Devices 

Peter Carcia, DuPont Central Res & Dev 

TF+AS-WeA Thin Films: Growth and Characterization-I 

Ayodhya Tiwari, EMPA, Switzerland 

TF+MI-WeA Thin Films for Memory and Data Storage 

Sylvain Maitrejean, CEA Leti, France 

Randall Victora, University of Minnesota 

TF+EM+SE+NS-ThM Nanostructuring Thin Films 

Kostya Ostrikov, CSIRO Materials Science 

and Engineering, Australia 

TF+NS+EM-ThM Thin Films: Growth and Characterization-II 

Patrice Raynaud, CNRS and University Paul 

Sabatier Toulouse France 

TF+AS+SS-ThA Thin Films: Growth and Characterization-III 

Franklin Tao, University of Notre Dame 

TF+EM+SS-ThA Applications of Self-Assembled Monolayers 

and Layer-by-Layer Assemblies 

Graham Leggett, University of Sheffield, UK 

TF-ThP Thin Film Poster Session 

VACUUM TECHNOLOGY 

The Vacuum Technology Division (VT) is pleased to present five 

oral sessions this year, as well as one poster session. The research 

presented in these sessions highlights the breadth of research into 

vacuum system modeling, design, construction, measurement, and 

species analysis, as well as surface science for accelerators. Our 

VT1 session on vacuum gauging and metrology highlights an invited 

talk by Gregory Mulhollan of Saxet Surface Science discussing 

the development of an XHV, non-ionizing vacuum gauge utilizing 

nano-materials. In addition to work characterizing calibrated leaks 

and gas flow, VT2 focuses on mass analysis, with an invited talk by 

Timothy Short of RTI International who extends typical mass spectrometry 

to oceanographic applications. VT3 emphasizes our core 

topic of pumping, gas dynamics and modeling, with Oleg Malyshev 

of STFC, Daresbury Laboratory discussing the applications of this 

field to particle accelerators. Accelerator and Ultra-Clean vacuum 

systems will be the focus of VT4, with Yusuke Suetsugu describing 

the state-of-the-art SuperKEKB Positron Ring vacuum systems, and 

Henrij Weirj discussing contamination control and Ultra-Clean systems. 

Our oral program concludes with VT5, with a focus on surface 

science applied to accelerator vacuum systems, where Michael 

47 

Kelley discusses the status and future prospects for niobium superconducting 

radio frequency accelerator cavities. The VTD poster 

session and Student Poster Competition Tuesday evening represent 

contributions across the spectrum of vacuum research topics. VTD 

will again host the “Ask the Experts” booth where experienced vacuum 

scientists, engineers and technicians will strive to answer perplexing 

vacuum technology issues. The booth is located in the 

exhibit area and staffed during exhibit hours. Bring your questions! 

CODE SESSION 

VT-MoM Vacuum Gauging and Metrology 

Gregory Mulhollan, Saxet Surface Science 

VT-MoA Gas Flow, Leaks, Permeation and Mass Analysis 

Timothy Short, SRI International 

VT-TuM Pumping, Gas Dynamics and Modeling 

Oleg Malyshev, STFC Daresbury Lab, UK 

VT-TuA Accelerator and Ultra-Clean Vacuum Systems 

Yusuke Suetsugu, High Energy Accelerator 

Res Org, Japan 

Henri Werij, TNO Technical Sciences, 

Netherlands 

VT-TuP Vacuum Technology Poster Session and Studentbuilt 

Vacuum System Poster Competition 

VT+AS+SS-WeM Surface Analysis and Vacuum Manufacturing for 

Accelerators 

Michael Kelley, Jefferson Lab and College of 

William & Mary 

FOCUS TOPICS 

ACTINIDES AND RARE EARTHS 

Actinides and Rare Earths exhibit many unique and diverse physical, 

chemical and magnetic properties, due in large part to the complexity 

of their 5f and 4f electronic structure. These Special Topic 

Sessions will focus upon the chemistry, physics and material science 

in the Lanthanide and Actinide materials, driven by the 4f and 

5f electronic structure. Particular emphasis will be placed upon the 

4f/5f magnetic structure, surface science and thin film properties 

and their applications to energy related issues. For the actinides, 

fundamental actinide science and its role in resolving technical 

challenges posed by actinide materials will be stressed, particularly 

with regard to energy applications, including energy generation, 

novel nuclear fuels and structural materials, waste remediation and 

waste disposal. Both basic and applied experimental approaches, 

including synchrotron- radiation-based and neutron-based investigations, 

as well as theoretical modeling computational simulations, 

are to be part of the Special Sessions. Of particular importance are 

the issues connected to potential renaissance in Nuclear Energy, 

including fuel synthesis, oxidation, corrosion, intermixing, stability 

in extreme environments, prediction of properties via bench-marked 

simulations, separation science, environmental impact and disposal 

of waste products. The shared sessions will be with MIND, Surface 

Science, Thin Films and Energy Frontiers 

CODE SESSION 

AC+MI+SS+ Electronic Structure and Spectroscopy of Actinides 

TF-MoM Sergei Butorin, Uppsala University, Sweden 

Richard Martin, Los Alamos National Lab 

Per Söderlind, Lawrence Livermore National Lab

AC+TF+SS+ Actinides and Rare Earths: Thin Films and Surface 

MI-MoA Science 

John McClory, Air Force Institute of Technology 

Thomas Scott, University of Bristol, UK 

AC+EN-TuM Energetic Materials Issues for Nuclear Power: Fuels, 

Corrosion and Waste Disposal 

J. Rory Kennedy, Idaho National Laboratory 

Paul Roussel, AWE, UK 

BIOFILMS AND BIOFOULING: 

MARINE MEDICAL ENERGY 

Biofilms on synthetic surfaces play critical roles in a variety of 

processes beyond marine biofouling. Adhesion and adsorption of 

biological components, both as organisms and their products, to 

marine equipment in ocean environments, termed “biofouling”, is a 

serious unsolved problem costing billions of dollars annually worldwide. 

Biofilms also play critical roles in the failure of medical 

devices, non-marine corrosion processes, sewage treatment, and 

renewable energy systems such as biofuel production. Finally, 

direct electrical generation and chemical production occurs via 

biofilms incorporated into bioelectrochemical cells. 

Sponsored by ONR, the Biofilms and Biofilm: Marine, Medical 

and Energy topical conference program, brings together biologists, 

chemists, physicists, material scientists and surface engineers to discuss 

new approaches that emphasize defining and controlling interfacial 

parameters that drive and inhibit colonization, adhesion and 

maturation of biofilms. We aim to create the opportunity for open 

discussion and debate on the Grand Challenges being faced by the 

international community as it attempts to control and understand 

biofilms as they relate to marine biofouling, medical problems, and 

energy applications. 

The day-long program Biofilms and Biofouling program is complemented 

by a range of Biomaterials Interfaces and energy topics 

spread across the week at the International Symposium, which commences 

Sunday afternoon with the Biomaterials Plenary on Imaging 

of Biointerfaces. 

CODE SESSION 

MB+BI-ThM Biofilms and Biofouling in Medicine 

Ross Carlson, Montana State University 

Kirk Schanze, University of Florida 

MB+BI-ThA Marine Biofouling 

Brenda Little, Naval Research Laboratory 

John Regan, Penn State University 

BIOINTERPHASES: BIOIMAGING 

The bioimaging theme, initiated in the BID Plenary, continues in 

the Biointerphases Focus Topic: Bioimaging (BN) which will be 

compiled into a Special Issue of the journal Biointerphases. The 

Focus Topic, Biofilms and Biofouling: Marine, Medical, Energy 

will bring together the wide range of communities to explore how 

bacterial biofilms and biofouling are controlled in marine applications, 

utilized in energy production and eliminated in medicine. 

Consistent with the vision of the BID, its technical program provides 

a forum that explores the current challenges at the interface of 

materials and biological systems in the following sessions with the 

highest quality invited speakers from around the world. The BID 

technical program incorporates topics dealing with cells and surfaces 

featuring invited presentations from Joachim Spatz (MPI), 

Matthias Lutolf (EPFL) and Carl Simon (NIST), biomolecules at 

48 

interfaces with Thomas Arnebrant (Malmö) and Rein Ulijn 

(WestChem), bio-nano interfaces with Vincent Rotello (UMass) 

and characterization with Buddy Ratner (UWEB) and Sebastian 

Maerkl (EPFL). 

CODE SESSION 

BN+AS-WeA Bioimaging 

Alain Brunelle, CNRS, Institut de Chimie des 

Substances Naturelles (ICSN), France 

Ioan Notingher, University of Nottingham, UK 

ELECTRON TRANSPORT AT THE NANOSCALE 

Electron transport at the nanoscale is the key to the novel applications 

of nanomaterials in electronic and energy technologies. Due 

to the restricted dimensionality, one distinctive character of nanomaterials 

is that the transport properties are critically dependent on 

the structural details. Therefore, an important requirement for transport 

research of a specific nanomaterial system is to examine its 

structures and properties in a coherent manner. The Electron Transport 

(ET) Focus Topic sessions provide a forum for the discussion 

of electron transport for materials and structures where electron 

transport at the nanoscale is of interest. A wide range of scanning 

probe microscopy (SPM) and mesoscopic transport spectroscopy 

techniques are making these studies possible. SPM, in particular, 

provides unparalleled access to the nanoscale world through structural 

imaging, functionality probing, and nanostructure manipulation. 

The sessions encompass both theory and experiment related to 

atomic structures, nanowires and junctions, molecules and quantum 

dots, defects and domain/grain boundaries, and surfaces and interfaces, 

and also novel methodologies and techniques. Materials studied 

will include metal, semiconductor, complex oxide, carbon based 

materials, molecules, and organic/inorganic hybrid materials. This 

focus topic is co-sponsored by the Nanometer-scale Science and 

Technology Division, the Electronic Materials and Processing Division, 

the Scanning Probe Microscopy Focus Topic, and the 

Graphene Focus Topic. 

CODE SESSION 

ET+NS+EM-ThM Electron Transport at the Nanoscale: Nanowires 

and Junctions 

Lincoln Lauhon, Northwestern University 

ET+SS+GR+SP-ThA Electron Transport at the Nanoscale: Molecules 

and Defects 

Hong-jun Gao, Chinese Academy of Sciences 

Sergei Kalinin, Oak Ridge National Laboratory 

ET-ThP Electron Transport at the Nanoscale Poster Session 

ET+SS+GR+SP-FrM Electron Transport at the Nanoscale: Development 

of Theories and Techniques 

Rolf Moeller, U of Duisburg-Essen, Germany 

Xiaoguang Zhang, Oak Ridge National Lab 

ENERGY FRONTIERS 

The Energy Frontiers Focus Topic (EN) highlights the fundamental 

science underlying next generation energy capture, conversion, 

transport, and storage technologies. This focus topic is inherently 

interdisciplinary – cross-cutting through many of the AVS divisions 

and focus topics. This year, 9 core sessions will address recent 

advances in the understanding of photovoltaic, photocatalytic, electrochemical, 

and thermophysical materials and interfaces. EN is also

co-sponsoring 12 additional sessions with nearly all the divisions 

(Applied Surface science, Biomaterial Interfaces, Thin Films, Plasma 

Science and Technology, Surface Science, Nanometer-scale Science 

and Technology, Magnetic Interfaces) and 5 focus topics (Actinides, 

Transparent Conductors and Printable Electronics, Electron Transport 

at the Nanoscale, Oxide Heterostructures-Interface Form and Function 

and Spectroscopic Ellipsometry). 

Multiple sessions will highlight both traditional and emerging photovoltaics. 

Two sessions are devoted to chalcogenide materials (e.g. 

CIGS, CZTS, etc.) and devices. Invited talks by a number of leaders in 

the field, including Chris Ferekides, William Shafarman, Susanne 

Siebentritt, Timothy Gessert, Hugh Hillhouse, and Hans-Werner Shock, 

are the cornerstone of these sessions. Harry Atwater will discuss “Photonic 

Materials for Solar Energy Conversion at the Thermodynamic 

Limit” at the outset of the Thin Film, Heterostructured, and Organic 

Solar Cells session. Vijit Sabnis, a co-founder of Solar Junction, will 

continue this session with “High Efficiency Multijunction Solar Cells 

Employing Dilute Nitrides.” A diverse session on Nanostructured Solar 

Cells will be headlined by Joseph Luther’s talk entitled “Quantum Dot 

Solar Cells with External Quantum Efficiencies Exceeding 100% by 

Multiple Exciton Generation” and Tim Lian’s presentation on “Single 

and Multiple Exciton Dissociation in Colloidal Nanoheterostructures.” 

Electrochemical materials and devices are also prominently featured this 

year. Nancy Dudney will describe her recent work on “Batteries and 

Battery Materials by Vapor Deposition” at the outset of the Thin Films 

for Energy Applications session. Andrew Herring and Gleb Yushin will 

both be featured during the Batteries and Fuel Cells session. The EN 

focus topic is rounded out with a final session covering recent advances 

in Photocatalysis and Solar Fuels. 

CODE SESSION 

EN+NS-MoM Nanostructured Solar Cells 

Tianquan Lian, Emory University 

Joseph Luther, Natl Renewable Energy Lab 

EN+TF-MoA Chalcogenide Solar Cells I 

Timothy Gessert, Natl Renewable Energy Lab 

Hugh Hillhouse, University of Washington 

Matthew Law, Univ of California, Irvine 

EN+TF-TuM Chalcogenide Solar Cells II 

Chris Ferekides, University of South Florida 

William Shafarman, University of Delaware 

Susanne Siebentritt, Univ of Luxembourg 

EN+TF-TuA Thin Film, Heterostructured, and Organic Solar Cells 

Michael Arnold, Univ of Wisconsin Madison 

Harry Atwater, California Institute of Tech 

Vijit Sabnis, Solar Junction 

EN+PS-WeM Plasmas for Photovoltaics and Energy Applications 

Erik Johnson, LPICM-CNRS, Ecole Polytech, France 

Tomohiro Nozaki, Tokyo Ins of Tech, Japan 

EN+TF-WeA Thin Films for Energy Applications 

Nancy Dudney, Oak Ridge National Lab 

EN+NS-ThM Batteries and Fuel Cells 

Andrew Herring, Colorado School of Mines 

Gleb Yushin, Georgia Institute of Technology 

EN+AS-ThA Characterization of Energy Materials and Systems 

David Albin, Natl Renewable Energy Lab 

EN+NS-ThA Thermophotovoltaics, Thermoelectrics & Plasmonics 

Yue Wu, Purdue University 

EN-ThP Energy Frontiers Poster Session 

EN+SS-FrM Photocatalysis and Solar Fuels 

49 

GRAPHENE AND RELATED MATERIALS 

Graphene and other two-dimensional (2D) materials have recently 

attracted an enormous attention due to their unique physical and 

chemical properties, which open up exciting avenues for both fundamental 

research and novel applications. This AVS focus topic is 

an interdisciplinary forum, which will review the world-wide effort 

in exploring the fundamental properties of graphene and other 2D 

materials, their synthesis, characterization, processing and applications. 

This year’s program consists of 9 Focus Topic sessions cosponsored 

by 9 AVS divisions, which will highlight recent major 

breakthroughs, progress, and challenges in rapidly developing the 

science and technology of graphene and other 2D materials. 

Our program will start on Monday morning with the session on 

graphene growth, which include invited talks by Thomas Michely 

on epitaxial graphene on Ir(111) surface and by Rudolf Tromp on 

growth studies by various surface science techniques. Monday 

afternoon’s session on graphene’s electronic properties and charge 

transport will include invited talks by Kiril Bolotin “Tuning electronic 

properties of graphene by controlling its environment” and 

by Eli Rotenberg “Growth and interactions in epitaxial graphene 

layers”. Our session on graphene’s optical, magnetic, mechanical, 

and thermal properties on Tuesday morning will feature invited 

talks “Spin-transport and magnetism in graphene” by Roland 

Kawakami, “Probing few-layer graphene by optical spectroscopy” 

by Tony Heinz , and “Graphene mechanics and NEMS applications” 

by James Hone. Graphene characterization session on Tuesday 

afternoon will feature invited talk by Phillip First on Scanning 

tunneling spectroscopy of epitaxial graphene. On Wednesday morning, 

the session on graphene’s surface chemistry, functionalization, 

biological and sensor applications will include invited talks by 

Mark Hersam on molecularly-resolved chemical functionalization 

of graphene and by Andrey Turchanin on molecular route to carbon 

nanomembranes, graphene and their hybrids. The Wednesday afternoon 

session on dopants, defects, and interfaces in graphene will 

feature an invited talk by Mauricio Terrones “The role of defects 

and doping in graphene-like materials and beyond”. Graphene 

nanostructures will be discussed at the session on Thursday morning, 

which will include invited talks by Alex Zettl “Growth of a 

Linear Topological Defect in Graphene as a Gate-tunable Valley 

Valve” and by Debdeep Jena “Electronic Properties and Device 

Applications of Wafer-Scale Graphene Nanoribbons”. 

On Thursday afternoon, new developments in investigation of 

two-dimensional materials beyond graphene will be highlighted in 

the series of the invited talks by Jun Lou “Large Area Vapor Phase 

Growth and Characterization of MoS2 Atomic Layers”, by Boris 

Yakobson “Probing the BCN-triangle by Computations—Outside 

the Carbon Corner”, and by Andras Kis “Single-layer MoS2 

Devices and Circuits”. Graphene and related materials poster session 

will take place on Thursday afternoon as well. The full week 

graphene focus topic program will conclude with the session on 

graphene device physics and applications, which include invited 

talk by Xiangfeng Duan “Heterointegration of Graphene with Nano 

and Molecular Scale Structures for High Performance Devices”, by 

Xiangfeng Duan “Graphene RF: From Fundamentals to Opportunities”, 

and by Virginia Wheeler “Graphene and Dielectric Integration: 

A Sticky Situation?” 

CODE SESSION 

GR+EM+NS+PS Graphene Growth 

SS+TF-MoM Thomas Michely, Universität zu Köln, Germany 

Rudolf Tromp, IBM T.J. Watson Research Center 

GR+EM+ET+ Electronic Properties and Charge Transport 

NS+TF-MoA Kirill Bolotin, Vanderbilt University 

Eli Rotenberg, Lawrence Berkeley National Lab

GR+AS+EM+MI Optical, Magnetic, Mechanical & Thermal Properties 

+MN-TuM Tony Heinz, Columbia University 

James C. Hone, Columbia University 

Roland Kawakami, Univ of California, Riverside 

GR+AS+NS+SP Graphene Characterization Including Microscopy 

+SS-TuA and Spectroscopy 

Phillip First, Georgia Tech 

GR+AS+BI+PS Graphene Surface Chemistry, Functionalization, 

+SS-WeM Biological and Sensor Applications 

Mark Hersam, Northwestern University 

Andrey Turchanin, Univ of Bielefeld, Germany 

GR+AS+EM+NS Dopants and Defects in Graphene; Graphene Inter 

+SS-WeA faces with Other Materials 

Mauricio Terrones, Pennsylvania State University, 

Shinshu University, Japan 

GR+AS+NS Graphene Nanostructures 

+SS-ThM Debdeep Jena, University of Notre Dame 

Alex Zettl, Univ of California, Berkeley, LBL 

GR+EM+NS+ Beyond Graphene: BN and Other 2D Electronic 

SS+TF-ThA Materials; 2D Heterostructures 

Andras Kis, EPFL, Switzerland 

Jun Lou, Rice University 

Boris Yakobson, Rice University 

GR-ThP Graphene and Related Materials Poster Session 

GR+EM+ET+ Graphene Device Physics and Applications 

MS+NS-FrM Xiangfeng Duan, Univ of California, Los Angeles 

Jeong-Sun Moon, HRL Laboratories LLC 

Virginia Wheeler, U.S. Naval Research Lab 

HELIUM ION MICROSCOPY 

The Focus Topic on Helium Ion Microscopy (HI) provides a 

forum for scientists working with Helium Ion Microscopes and 

those interested in its prospects and capabilities. In general, the 

focused topic covers aspects of science currently being explored 

with the HIM, ranging from image formation and contrast mechanisms 

to materials imaging, bioimaging and lithography. The 

Focus Topic starts with keynote presentations on “Basics of Imaging 

with Ions” by David Joy (University of Tennessee) and “Surface 

Analysis using Chanelling Contrast in NUHV Helium Ion 

Microscopy” by Bene Poelsema (Twente University). In session 

“HI1: Basics of Helium Ion Microscopy”, experimental aspects 

such as gas field ion sources and ion-materials interactions for 

imaging and nanomodification are covered. In session “HI2: Imaging 

and Lithography with the Helium Ion Microscope” invited 

talks by Stuart Boden (University of Southampton) on “HIM of 

Photonic Structures in Biological Systems” and Hongzhou Zhang 

(Trinity College) on “Dopant Contrast in HIM” introduce the field. 

In contributed talks a particular focus is laid on HIM investigations 

of two-dimensional nanomaterials, such as carbon nanomembranes 

(CNMs) and Graphene. The poster session “HI3: Aspects of Helium 

Ion Microscopy” covers a wide range of imaging and lithography 

aspects: carbon nanomembranes, irradiation damage, and ion 

beam induced deposition. 

50 

CODE SESSION 

HI+AS+NS-WeA Basics of Helium Ion Microscopy 

David Joy, University of Tennessee 

Bene Poelsema, U of Twente, Netherlands 

HI+AS+BI+NS-ThM Imaging and Lithography with the Helium Ion 

Microscope 

Stuart Boden, Univ of Southampton, UK 

Hongzhou Zhang, Trinity College, Ireland 

HI-ThP Aspects of Helium Ion Microscopy Poster 

Session 

IN SITU MICROSCOPY & SPECTROSCOPY 

Characterization of functional materials such as catalysts, films, 

nanomaterials, biomaterials, living tissues, and devices is critical in 

understanding and tailoring material properties, and controlling the 

behavior during growth, assembly or catalytic reaction. With the 

recent development of new experimental techniques and instrumentation, 

it is now possible to synthesize, characterize, and measure 

properties of active materials, in situ, during advanced spectroscopic, 

microscopic and imaging analysis. 

Focused symposium on In Situ Microscopy and Spectroscopy 

presents development and capabilities of in-situ characterization 

and diagnostic tools. 

In Situ Spectroscopic Studies of Catalysis and Gas-Solid Reactions 

session covers application of ambient pressure XPS for alternative 

energy research, catalysis, electrocatalysis and environmental 

science, use of multiple auxiliary in-situ techniques for following 

reactions and newly developed methods such as study of catalysis 

using in situ laser induced fluorescence. 

Recent developments of in-situ mass spectrometric methods for 

real-time disease diagnostics as well as novel techniques such as 

plasma pencil atmospheric mass spectrometry will be covered in 

In-situ Studies of Organic and Soft materials session. 

Other covered areas in this FT include: In situ microscopy at 

sub-micometer scale with chemical information and of 2D materials 

such as graphenes; Use of in-situ X-ray synchrotron radiation 

for study of thin film growth for both polymers and oxides; In-situ 

imaging and visualization of nucleation, growth, self-cleaning and 

transport in advanced functional nanomaterials. 

CODE SESSION 

IS+AS+SS+EN-TuM In Situ Spectroscopic Studies of Catalysis and 

Gas-Solid Reactions 

Hendrik Bluhm, Lawrence Berkeley Natl Lab 

Ayman Karim, Pacific Northwest Nat Lab 

IS+AS+BI+ET+ In Situ Studies of Organic and Soft Materials 

GR+NS-TuA and In Situ Microscopy 

Peter Sutter, Brookhaven National Lab 

Zoltan Takats, Imperial College, UK 

IS-TuP In Situ Microscopy and Spectroscopy Poster 

Session 

IS+AS+OX+ET-WeM In Situ Characterization of Solids: Film Growth, 

Defects, and Interfaces 

Jeffrey Eastman, Argonne National Lab

NANOMANUFACTURING SCIENCE 

AND TECHNOLOGY 

The Nanomanufacturing Science and Technology Focus Topic 

program highlights the AVS's strength in bringing together basic 

science and applied technology to support cutting edge industry. 

Perspectives of the challenges facing nanomanufacturing are presented 

in Tuesday morning's all-invited session featuring extended 

discussion time after each presentation. The critical issues related 

to environmental and toxicity issues related to nanomanufacturing 

are highlighted in two excellent invited presentations in our Monday 

morning session. ALD and other scalable processes for 

nanomanufacturing are presented in the Monday afternoon session. 

Look for Nanomanufacturing Focus Topic co-sponsored sessions 

scheduled throughout the rest of the week. 

CODE SESSION 

NM+AS+ Metrology & Environmental Issues in Nanomanufacturing 

MS-MoM Henry Everitt, U.S. Army Aviation and Missile 

Research Development and Engineering Center 

Vicki Grassian, University of Iowa 

James Liddle, NIST 

Sherine Obare, Western Michigan University 

NM+NS+MS+ ALD and Scalable Processes for Nanomanufacturing 

EM-MoA Maitreyee Mahajani, Applied Materials Inc. 

James Watkins, University of Massachusetts 

NM+MS-TuM All Invited Session: Challenges of Nanomanufacturing 

from an Industrial Perspective 

Michael Hunter, Liquidia Technologies, INC. 

David Lazovsky, Intermolecular, Inc. 

Akihisa Sekiguchi, Tokyo Electron Limited 

NM-TuP Topics in Nanomanufacturing Poster Session 

OXIDE HETEROSTRUCTURES-INTERFACE 

FORM & FUNCTION 

Oxides can display the full range of physical and chemical phenomena 

seen in the solid state including ferromagnetism, ferroelectricity, 

superconductivity, and catalytic activity. As wide-ranging 

as these phenomena are, entirely new behavior and phenomena can 

emerge at oxide interfaces to other oxides and materials. This 

Focus Topic brings together world leaders on all aspects of these 

phenomena including characterization of the interfaces and structures 

at the nanoscale, growth and properties of epitaxial oxide 

interfaces, new phenomena that emerge at oxide interfaces, multiferroic 

interfaces, interfaces to active organic layers, and oxide surface 

and interfacial chemistry. 

CODE SESSION 

OX+EM+MI+ Structure–Property Relationships in Epitaxial Oxide 

NS+TF-MoM Interfaces 

Yasuyuki Hikita, SLAC National Accelerator Lab 

Sohrab Ismail-Beigi, Yale University 

Lena Kourkoutis, Cornell University 

OX+SS+TF+ Chemistry of Oxide Surfaces and Interfaces 

MI-MoA Zheng-Hong Lu, University of Toronto, Canada 

Peter Stair, Northwestern U & Argonne Natl Lab 

OX-TuP Oxide Interfaces & Heterostructures Poster 

Session 

51 

SCANNING PROBE MICROSCOPY 

The scanning probe microscopy (SPM) field has provided a family 

of techniques that have revolutionized our understanding of 

nanoscale interfacial phenomena. Now comprised of more than 20 

different types of microscopy, the field has provided advanced tools 

that are able to image, manipulate and interrogate the functionality 

of surface features to the level of individual molecules and atoms. 

Such tools underpin the research activities encompassed by many 

AVS divisions. 

This focus topic will provide a forum for the discussion of the latest 

advances made in the SPM field. Areas of particular interest 

include approaches to improve imaging capability (e.g. resolution, 

image acquisition time, ability to obtain images in extreme environments, 

and in quantitative property/functionality data acquisition), 

and in the acquisition of probe-sample interaction data (including 

nano-manipulation and nanofabrication). Novel and emerging instrument 

formats, including those that combine SPM with complementary 

analytical methods (e.g. vibrational spectroscopy or fluorescence 

micrsoscopy) are also of considerable interest. 

These interests are reflected through invited and contributed presentations 

in 3 key areas, namely: Advances in Scanning Probe 

Imaging (Invited talks by Jamie Hobbs (Sheffield) and Leo Gross 

(IBM)), Probe-Sample Interactions, Nano-manipulation and Fabrication 

(Invited talks by Robert Wolkow (Alberta) and Hermann Gaub 

(Munich)) and Emerging Instrument Formats (Invited talks by 

Steven Jesse (Oak Ridge National Laboratory) and Craig Prater 

(Anasys Instruments). Importantly, this focus topic will also precede 

the Electron Transport Focus Topic, in which scanning probe methods 

strongly feature. 

CODE SESSION 

SP+AS+BI+ET+ Advances in Scanning Probe Imaging 

MI+NS-TuA Leo Gross, IBM Research - Zurich, 

Switzerland 

Jamie Hobbs, University of Sheffield, UK 

SP+AS+BI+ET+MI+ Probe-Sample Interactions, Nano- 

NM+NS+SS+TF-WeM Manipulation and Fabrication 

Hermann Gaub, Ludwig-Maximilians U., 

Germany 

Robert Wolkow, University of Alberta and 

National Institute for Nanotechnology, 

Canada 

SP+AS+BI+ET+ Emerging Instrument Formats 

MI+TF-WeA Stephen Jesse, Oak Ridge National Lab 

Craig Prater, Anasys Instruments 

SPECTROSCOPIC ELLIPSOMETRY 

Following the very successful participation to the Spectroscopic 

Ellipsometry Focus Topic in 2009-2011, the AVS International 

Symposium hosts the Spectroscopic Ellipsometry Focus Topic (EL) 

also in 2012, by providing a fertile terrain of discussion for all scientists 

and engineers willing to present their most recent progress in 

the field of science, technology and applications of spectroscopic 

ellipsometry. In particular, given the extensive, yet complementary 

interest of the AVS community in material science and characterization, 

in the physics and chemistry principles at the basis of surface 

modification and (thin) film growth, and in novel applications, the 

EL Focus Topic will host two oral sessions entitled “ Spectroscopic 

Ellipsometry for Photovoltaics and Semiconductor Manufacturing” 

and “Spectroscopic Ellipsometry: from Organic and Biological Systems 

to Inorganic Thin Films.”

The EL Focus Topic proudly hosts three distinguished invited 

speakers within these sessions. Robert Collins (University of Toledo) 

will present his research in the field of Multichannel Spectroscopic 

Ellipsometry applied to I-III-VI2 Thin Film Photovoltaics. 

Carlos Garcia (The University of Texas at San Antonio) will discuss 

his latest work intriguingly anticipated by the title “The Story 

of Most Proteins and Most Surfaces as Told by Spectroscopic 

Ellipsometry”. Finally, Clifford Henderson (Georgia Institute of 

Technology) will present his ellipsometric studies in the field of 

“Detailed Photoresist and Photoresist Processing Studies using 

Spectroscopic Ellipsometry.” 

CODE SESSION 

EL+TF+AS+EM+SS+ Spectroscopic Ellipsometry for Photo 

PS+EN+NM-MoM voltaics and Semiconductor Manufacturing 

Robert Collins, University of Toledo 

EL+TF+BI+AS+ Spectroscopic Ellipsometry: From Organic and 

EM+SS-MoA Biological Systems to Inorganic Thin Films 

Carlos Garcia, Univ of Texas at San Antonio 

Clifford Henderson, Georgia Inst of Tech 

EL+TF+AS+EM+ Spectroscopic Ellipsometry Poster Session 

SS-TuP 

TRANSPARENT CONDUCTORS 

AND PRINTABLE ELECTRONICS 

Electronic materials and devices are rapidly moving toward 

greater versatility, e.g., via printability and/or flexibility over large 

areas while also exhibiting optical transparency. This focus topic 

addresses research on a range of transparent and printable electronics, 

from conductors to complete transistors and will consist of two 

sessions: a session on Printable and Flexible Electronics (Wednesday 

afternoon) and a session on Transparent Conductors and 

Devices (Thursday morning). Presentations address synthesis, 

growth, fabrication, theory, characterization, and processing of 

transparent and printable electronics, based on both novel and 

more established materials. The first session will begin with presentations 

on metal oxides and organic materials for printable electronics 

and will follow with presentations on alternative materials 

for flexible, transparent and printable electronics and photovoltaics. 

The second session will include presentations on processing 

and characterization of oxide-based thin-film transistors 

(TFTs), which will be complemented by presentations on theory 

and characterization of various transparent conducting oxide materials 

and interfaces. A poster session will also be held (Thursday 

evening) to complement the oral sessions; posters will address 

oxide-based TFTs, as well as materials for transparent conductors 

and flexible electronics. 

CODE SESSION 

TC+EM+AS-WeA Printable and Flexible Electronics 

Antonio Facchetti, Polyera Corp. & 

Northwestern U. 

Mohammad Islam, Carnegie Mellon Univ 

Maikel van Hest, Natl Renewable Energy Lab 

TC+EM+AS+TF+ Transparent Conductors and Devices 

EN-ThM Hideo Hosono, Tokyo Inst of Tech, Japan 

Henning Sirringhaus, Univ of Cambridge, UK 

TC-ThP Transparent Conductors and Printable Electronics 

Poster Session 

52 

TRIBOLOGY 

The 2012 Tribology Focus Topic (TR) offers 3 core oral sessions, 

which include sessions jointly sponsored by the Advanced 

Surface Engineering (SE) Division and the Biomaterial Interfaces 

(BI) Division, as well as a poster session. This program spans topics 

that touch on the molecular origins of friction, materials in low 

friction materials and coatings, friction in biological materials, self 

healing coatings, and bio-inspired design. The organizers are especially 

proud of the many distinguished talks that will be presented 

in each topical session. Our focused topic begins Tuesday morning 

with a session titled Self Healing Coatings, Bio-Inspired Design, 

and Frictional Properties of Biological Materials. This session 

includes invited talks by Scott Perry from the University of Florida 

who will present his work on friction between hydrogel lens contacts. 

Sybrand van der Zwaag from Delft University of Technology 

and University of Twente will provide a perspective on how self 

healing phenomena can be used to address challenges found in 

materials used in harsh environments. Finally, Seong Kim from 

Penn State University will present his work on how self healing of 

a surface can be obtained through a bound plus mobile lubricant. In 

our session titled Molecular Origins of Friction and Wear on Tuesday 

afternoon, Mark Robbins of Johns Hopkins University will 

present an invited talk on how area, stiffness, friction and adhesion 

of contacts play an important part in understanding the interaction 

between rough contacts. Our final session on Wednesday morning, 

titled Tribology and Wear of Low-Friction Coatings and Materials, 

includes an invited talk by Chris Muratore from the Air Force 

Research Laboratory. Chris will be speaking on in situ monitoring 

and characterization of environmentally adaptive composites. In 

addition to the opportunity to see international leaders present contributed 

and invited talks on cutting-edge issues pertinent to tribology, 

our poster session on Tuesday evening provides yet another 

opportunity to network and interact with leading researchers in 

friction and wear. 

CODE SESSION 

TR+BI-TuM Self Healing Coatings, Bio-Inspired Design, and 

Frictional Properties of Biological Materials 

Seong Kim, Pennsylvania State University 

Scott Perry, University of Florida 

Sybrand van der Zwaag, Delft Univ of Tech and 

University of Twente, the Netherlands 

TR-TuA Molecular Origins of Friction and Wear 

Mark Robbins, Johns Hopkins University 

TR-TuP Tribology Poster Session 

Thomas 

TR+SE-WeM Tribology and Wear of Low-Friction Coatings and 

Materials 

Christopher Muratore, Air Force Research Lab

Symposium Plenary Lecture 

Mon. 12 Noon Ballrm B 

The BP Oil Spill in the Gulf of Mexico: 

Are Microbes Helping to Clean up the Mess? 

Joel E. Kostka, Georgia Institute of Tech 

Advanced Surface Engineering 

Mon. AM Room 22 Nanostructured Thin Films and Coatings I: 

Interface Aspects 

Mon. PM Room 22 Nanostructured Thin Films and Coatings II: 

Multifunctional Properties 

Tue. AM Room 22 Pulsed Plasmas in Surface Engineering 

Tue. PM Room 22 Atmospheric Pressure Plasmas 

Tue. PM Central Hall Advanced Surface Engineering 


Applied Surface Science 

Mon. AM Room 20 Quantitative Surface Chemical Analysis, 

Technique Development, and Data 

Interpretation - Part 1 

Mon. PM Room 20 Quantitative Surface Chemical Analysis, 

Technique Development, and Data 

Interpretation - Part 2 

Tue. AM Room 20 Practical Surface Analysis 

Tue. PM Room 20 Surface Analysis of Materials Using 

Vibrational Techniques (2:00-3:20 pm)/ 

Multi-Technique Analysis (4:00-6:00 pm) 

Tue. PM Central Hall Applied Surface Science Poster Session 

Wed. AM Room 20 Surface Analysis of Biological Materials 

Using Vibrational & Non Linear Optical 

Spectroscopy Techniques (8:00-10:00 am) / 

3D Imaging & Nanochemical Analysis - 

Part 1 (10:40 am-12:00 pm) 

Wed. PM Room 20 3D Imaging & Nanochemical Analysis - 

Part 2 (2:00-3:20 pm)/Advanced Data 

Analysis & Instrument Control 

(4:00-6:00 pm) 

Thu. AM Room 20 Applications of Large Cluster Ion Beams 

Thu. PM Room 20 Applications of Large Cluster Ion Beams - 

Part 2 (2:00-3:20 pm)/ Surface Analysis 

using Synchrotron Techniques 

(3:40-5:40 pm) 

Fri. AM Room 20 Surface Analysis using Synchrotron 

Techniques 

Biomaterial Interfaces 

Sun. PM Room 23 Biomaterials Plenary - Bioimaging: 

In Vacuo, In Vitro, In Vivo 

Mon. AM Room 23 Surfaces to Control Cell Response 

Mon. PM Room 23 Cell-Surface Interactions: High 

Throughput Methodologies 

Tue. AM Room 23 Biomolecules at Interfaces 

Tue. PM Room 23 Characterization of Biointerfaces 

Tue. PM Central Hall Biomaterial Interfaces Poster Session 

Wed. AM Room 23 Bio/Nano Interfaces with Applications in 

Biomedicine and Energy 

Electronic Materials and Processing 

Mon. AM Room 9 High-k Dielectrics for MOSFETs I 

Mon. PM Room 9 High-k Dielectrics for MOSFETS II 

Tue. AM Room 9 Electrical Testing and Defects in III-V’s 

Tue. PM Room 9 Materials and Processes for Advanced 

Interconnects 

SESSION OVERVIEW 

53 

Wed. AM Room 9 Hybrid Electronic Materials and Interfaces 

Wed. PM Room 9 Oxides and Dielectrics for Novel Devices 

and Ultra-dense Memory 

Thu. AM Room 14 Nanoelectronic Interfaces, Materials, and 

Devices 

Thu. AM Room 9 Processing for Ultra Low Power 

Electronics + Semiconductor 


Thu. PM Room 9 Semiconductor Heterostructures II + 

Heusler Alloys 

Thu. PM Room 14 Growth and Characterization of Group III- 


Thu. PM Central Hall Electronic Materials and Processing Poster 

Session 

Fri. AM Room 14 Low-Resistance Contacts to 


Magnetic Interfaces and Nanostructures 

Tue. PM Room 6 Fundamental Problems in Magnetism 

Wed. AM Room 6 Topological Insulators and Rashba 

Wed. PM Room 6 Spintronics, Magnetoelectrics, 

Multiferroics 

Thu. AM Room 6 Emerging Probes in Magnetic Imaging, 

Reflectometry and Characterization 

Thu. PM Central Hall Magnetic Interfaces and Nanostructures 


Manufacturing Science and Technology 

Mon. AM Room 16 Metrology and Environmental Issues in 


Mon. PM Room 16 ALD and Scalable Processes for 


Tue. AM Room 16 All Invited Session: Challenges of 

Nanomanufacturing from an Industrial 

Perspective 

Tue. PM Central Hall Topics in Nanomanufacturing Poster 

Session 

MEMS and NEMS 

Mon. AM Room 10 Characterization of Surfaces and 

Interfaces in MEMS and NEMS 

Mon. PM Room 10 Multi-scale Interactions of Materials and 

Fabrication at the Micro- and Nano-scale 

Tue. AM Room 10 Optomechanics and Photonic MEMS and 

NEMS 

Tue. PM Central Hall MEMS and NEMS Poster Session 

Nanometer-Scale Science and Technology 

Mon. AM Room 12 Nanoparticles and Quantum Structures 

Mon. PM Room 12 Nanopatterning and Nanolithography 

Tue. AM Room 12 One-Dimensional Nanowires and 

Nanotubes 

Tue. PM Room 12 Nanomaterials in Two and Three 

Dimensions 

Wed. AM Room 12 Nanoscale Catalysis and Surface 

Chemistry 

Wed. PM Room 12 Nanophotonics and Plasmonics 

Thu. AM Room 12 Nanoscale Imaging and Microscopy 

Thu. PM Central Hall Nanometer-scale Science and Technology 

Poster Session

Plasma Science and Technology 

Mon. AM Room 24 Atmospheric Plasma Processing and 

Micro Plasmas 

Mon. AM Room 25 Advanced FEOL/Gate Etching 1 

Mon. PM Room 24 Applications of (Multiphase) Atmospheric 

Plasmas (including Medicine and 

Biological Applications) 

Mon. PM Room 25 Plasma Modeling 

Tue. AM Room 24 Plasma Diagnostics, Sensors and Control I 

Tue. AM Room 25 Advanced FEOL/Gate Etching 2 

Tue. PM Room 24 Plasma Deposition and Plasma Enhanced 

ALD 

Tue. PM Room 25 Plasma Surface Interaction during Plasma 

Etching 

Wed. AM Room 24 Atmospheric Plasma Processing for PV, 

Flexible Electronics (incl. R2R) 

Wed. AM Room 25 Advanced BEOL/Interconnect Etching 

Wed. PM Room 24 Plasma Diagnostics, Sensors and Control 2 

Wed. PM Room 25 Plasma Surface Interactions during 

PECVD and Plasma Surface Modification 

Thu. AM Room 24 Plasma Processing for Disruptive 

Technologies (NVM, TSV, etc.) 

Thu. AM Room 25 Low Damage Processing 

Thu. PM Room 25 Plasma Sources 

Thu. PM Central Hall Plasma Science and Technology Poster 

Session 


Mon. AM Room 21 Nonequillibrium and Nonlinear Processes 

Mon. PM Room 21 Surface Dynamics 

Tue. AM Room 21 Surface Reactivity of Oxides 

Tue. PM Room 21 Reactivity of Size and Shape Selected 

Nanoparticles 

Tue. PM Central Hall Surface Science Poster Session 

Wed. AM Room 22 Synthesis and Characterization of Oxides 

Wed. AM Room 21 Chemisorption on Metallic Surfaces 

Wed. PM Room 22 Semiconductor Surfaces 

Wed. PM Room 21 Catalysis on Metals and Alloys 

Thu. AM Room 21 Catalysis and Photocatalysis on Oxides 

Thu. AM Room 22 Molecular Films: Chirality & Electronic 

Features 

Thu. PM Room 21 Surface Science of Nanostructures 

Thu. PM Room 22 Liquid/Surface Interactions 

Thin Film 

Mon. AM Room 11 ALD Enabled Applications 

Mon. PM Room 11 ALD for Energy 

Tue. AM Room 11 ALD Reactions and Film Properties 

Tue. PM Room 10 Modeling and Analysis of Thin Films 

Tue. PM Room 11 ALD for Hybrid Films and 


Wed. AM Room 11 Glancing Angle Deposition (GLAD) 

Wed. AM Room 10 Thin Films for Encapsulation, Packaging, 

and Biomedical Devices 

Wed. PM Room 11 Thin Films: Growth and Characterization-I 

Wed. PM Room 10 Thin Films for Memory and Data Storage 

Thu. AM Room 10 Nanostructuring Thin Films 


54 

Thu. AM Room 11 Thin Films: Growth and Characterization-II 

Thu. PM Room 11 Thin Films: Growth and Characterization-III 

Thu. PM Room 10 Applications of Self-Assembled 

Monolayers and Layer-by-Layer 

Assemblies 

Thu. PM Central Hall Thin Film Poster Session 

Vacuum Technology 

Mon. AM Room 14 Vacuum Gauging and Metrology 

Mon. PM Room 14 Gas Flow, Leaks, Permeation and Mass 

Analysis 

Tue. AM Room 14 Pumping, Gas Dynamics and Modeling 

Tue. PM Room 14 Accelerator and Ultra-Clean Vacuum 

Systems 

Tue. PM Central Hall Vacuum Technology Poster Session and 

Student-built Vacuum System Poster 

Competition 

Wed. AM Room 14 Surface Analysis and Vacuum 

Manufacturing for Accelerators 

Exhibitors and Manufacturers Technology Spotlight 

Tue. AM West Exhibit Hall 10:00–10:40 AM 

Tue. PM West Exhibit Hall 12:00–2:00 PM 

Tue. PM West Exhibit Hall 3:20–4:00 PM 

Wed. AM West Exhibit Hall 10:20–10:40 AM 

Wed. PM West Exhibit Hall 12:20–2:00 PM 

Wed. PM West Exhibit Hall 3:20–4:00 PM 

Thu. PM West Exhibit Hall 12:00–1:00 PM 


Mon. AM Room 6 Electronic Structure and Spectroscopy of 

Actinides 

Mon. PM Room 6 Actinides and Rare Earths: Thin Films 

and Surface Science 

Tue. AM Room 6 Energetic Materials Issues for Nuclear 

Power: Fuels, Corrosion and Waste 

Disposal 

Biofilms and Biofouling: Marine Medical Energy 

Focus Topic 

Thu. AM Room 23 Biofilms and Biofouling in Medicine 

Thu. PM Room 23 Marine Biofouling 

Biointerphases: Bioimaging Focus Topic 

Wed. PM Room 23 Bioimaging 

Electron Transport at the Nanoscale Focus Topic 

Thu. AM Room 16 Electron Transport at the Nanoscale: 

Nanowires and Junctions 

Thu. PM Room 16 Electron Transport at the Nanoscale: 

Molecules and Defects 

Thu. PM Central Hall Electron Transport at the Nanoscale 


Fri. AM Room 16 Electron Transport at the Nanoscale: 

Development of Theories & Techniques


Mon. AM Room 15 Nanostructured Solar Cells 

Mon. PM Room 15 Chalcogenide Solar Cells I 

Tue. AM Room 15 Chalcogenide Solar Cells II 

Tue. PM Room 15 Thin Film, Heterostructured, and Organic 

Solar Cells 

Wed. AM Room 15 Plasmas for Photovoltaics and Energy 

Applications 

Wed. PM Room 15 Thin Films for Energy Applications 

Thu. AM Room 15 Batteries and Fuel Cells 

Thu. PM Room 15 Characterization of Energy Materials and 

Systems 

Thu. PM Room 7 Thermophotovoltaics, Thermoelectrics 


Thu. PM Central Hall Energy Frontiers Poster Session 

Fri. AM Room 15 Photocatalysis and Solar Fuels 


Mon. AM Room 13 Graphene Growth 

Mon. PM Room 13 Electronic Properties and Charge 

Transport 

Tue. AM Room 13 Optical, Magnetic, Mechanical and 


Tue. PM Room 13 Graphene Characterization Including 

Microscopy and Spectroscopy 

Wed. AM Room 13 Graphene Surface Chemistry, 

Functionalization, Biological and Sensor 

Applications 

Wed. PM Room 13 Dopants & Defects in Graphene; 

Graphene Interfaces with Other Materials 

Thu. AM Room 13 Graphene Nanostructures 

Thu. PM Room 13 Beyond Graphene: BN and Other 2D 

Electronic Materials; 2D Heterostructures 

Thu. PM Central Hall Graphene and Related Materials Poster 

Session 

Fri. AM Room 13 Graphene Device Physics and 

Applications 


Wed. PM Room 19 Basics of Helium Ion Microscopy 

Thu. AM Room 19 Imaging and Lithography with the Helium 


Thu. PM Central Hall Aspects of Helium Ion Microscopy Poster 

Session 

In Situ Microscopy and Spectroscopy Focus Topic 

Tue. AM Room 7 In Situ Spectroscopic Studies of Catalysis 

and Gas-Solid Reactions 

Tue. PM Room 7 In Situ Studies of Organic and Soft 

Materials and In Situ Microscopy 

Tue. PM Central Hall In Situ Microscopy and Spectroscopy 


Wed. AM Room 7 In Situ Characterization of Solids: 

Film Growth, Defects, and Interfaces 


55 

Nanomanufacturing Science and Technology Focus Topic 

Mon. AM Room 16 Metrology and Environmental Issues in 


Mon. PM Room 16 ALD and Scalable Processes for 


Tue. AM Room 16 All Invited Session: Challenges of 

Nanomanufacturing from an Industrial 

Perspective 

Tue. PM Central Hall Topics in Nanomanufacturing Poster 

Session 

Oxide Heterostructures-Interface Form & Function 

Focus Topic 

Mon. AM Room 7 Structure–Property Relationships in 

Epitaxial Oxide Interfaces 

Mon. PM Room 7 Chemistry of Oxide Surfaces and 

Interfaces 

Tue. PM Central Hall Oxide Interfaces and Heterostructures 



Tue. PM Room 16 Advances in Scanning Probe Imaging 

Wed. AM Room 16 Probe-Sample Interactions, Nano- 

Manipulation and Fabrication 

Wed. PM Room 16 Emerging Instrument Formats 


Mon. AM Room 19 Spectroscopic Ellipsometry for 

Photovoltaics and Semiconductor 

Manufacturing 

Mon. PM Room 19 Spectroscopic Ellipsometry: From Organic 

and Biological Systems to Inorganic Thin 

Films 

Tue. PM Central Hall Spectroscopic Ellipsometry Poster Session 

Transparent Conductors and Printable Electronics Focus 

Topic 

Wed. PM Room 7 Printable and Flexible Electronics 

Thu. AM Room 7 Transparent Conductors and Devices 

Thu. PM Central Hall Transparent Conductors and Printable 

Electronics Poster Session 


Tue. AM Room 19 Self Healing Coatings, Bio-Inspired 

Design, and Frictional Properties of 


Tue. PM Room 19 Molecular Origins of Friction and Wear 

Tue. PM Central Hall Tribology Poster Session 

Wed. AM Room 19 Tribology and Wear of Low-Friction 

Coatings and Materials

TAMPA MARRIOTT WATERSIDE 

HOTEL AND MARINA 

56

UPPER LEVEL 

LOWER LEVEL 


57

MEETINGS AND SPECIAL EVENTS 

SATURDAY, OCTOBER 27, 2012 

2:00 p.m. Education Committee Meeting ................................................................................................ Greco Boardroom (H) 

6:30 p.m. Education Committee Dinner .................................................................................................. IL Terrazzo Restaurant (H) 

SUNDAY, OCTOBER 28, 2012 

7:30 a.m. Fourteenth Topical Conference on Quantitative Surface Analysis (QSA 14)......................... 20 (CC) 

8:45 a.m. AVS Board of Director’s Meeting........................................................................................... Meeting Room 1 (H) 

12:30 p.m. AVS Board of Director’s Lunch.............................................................................................. Meeting Room 2 (H) 

1:00 p.m. Tutorial: Nanomanufacturing: Current Status and Future Prospects....................................... 16 (CC) 

2:00 p.m. Companion Tour Registration ................................................................................................. Level 2 Lobby (CC) 

2:00 p.m. JVST Associate Editor’s Meeting ............................................................................................ Meeting Room 3 (H) 

4:00 p.m. Biomaterials Plenary Session and Reception........................................................................... 23 (CC) 

4:00 p.m. International Interactions Committee Meeting........................................................................ Meeting Room 2 (H) 

6:00 p.m. Professional Development Workshop: Skills for Industrial Scientists & Engineers............... 16 (CC) 

6:00 p.m. Science Educators’ Workshop Teachers’ Reception............................................................... Meeting Room 9 (H) 

6:00 p.m. Vacuum Technology Division Executive Committee Meeting and Dinner............................ Meeting Room 4 (H) 

7:00 p.m. ASTM E-42 Business Meeting................................................................................................ 20 (CC) 

7:00 p.m. Short Course Committee Meeting ........................................................................................... Bayshore Boardroom (H) 

7:00 p.m. International Dignitaries & Chapter Chairs Reception (Invitation Only)................................ Presidential Suite (H) 

MONDAY, OCTOBER 29, 2012 

7:00 a.m. Companion Tour Registration ................................................................................................. Main Lobby (H) 

8:00 a.m. Science Educators’ Workshop................................................................................................. Meeting Room 6 (H) 

8:20 a.m. Albert Nerken Award Lecture, S. Tougaard, Univ. of Southern Denmark. ........................... 20 (CC) 

12:00 p.m. Plenary Lecture, Joel E. Kostka, Georgia Institute of Technology, 

“The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?”... Ballroom B (CC) 

12:00 p.m. Science Educators’ Workshop Lunch...................................................................................... Meeting Room 7 (H) 

1:00 p.m. 2013 AVS Program Committee Meeting and Lunch............................................................... Florida Ballroom VI (H) 

1:15 p.m. Professional Development Seminar: JVST Writer’s Workshop .............................................. Florida Ballroom V (H) 

5:20 p.m. Biomaterial Interfaces Division Business Meeting ................................................................. 23 (CC) 

5:30 p.m. Electronic Materials and Processing Division Forum: Careers at LAM Research Reception.... 9 (CC) 

5:30 p.m. Welcome Mixer ....................................................................................................................... Riverwalk (CC) 

7:00 p.m. Applied Surface Science Division Executive Committee Dinner ........................................... Meeting Room 5 (H) 

7:00 p.m. Professional Development Seminar: Federal Funding & Research Opportunities Town Hall..... Florida V (H) 

7:15 p.m. Publications Committee Meeting and Dinner.......................................................................... TBD (Offsite) 

7:30 p.m. Thin Film Division Award Presentation.................................................................................. Meeting Room 1 (H) 

8:30 a.m.-5:00 p.m. Short Course Program................................................................................................ Various Rooms (CC) 

TUESDAY, OCTOBER 30, 2012 


7:00 a.m History Committee Meeting .................................................................................................... Meeting Room 2 (H) 

8:00 a.m. Awards Committee Meeting and Lunch.................................................................................. Meeting Room 3 (H) 

8:00 a.m. Science Educators’ Workshop................................................................................................. Meeting Room 6 (H) 

8:20 a.m. Gaede Langmuir Award Lecture, 

D. Menzel, Fritz-Haber Insitut and Techn Univ. of Muenchen, Germany ........................ 21 (CC) 

9:40 a.m. Vacuum Technology Division Business Meeting ................................................................... 14 (CC) 

10:00 a.m. Session Coffee Break............................................................................................................... West Exhibit Hall (CC) 

12:00 p.m. Chapters, Divisions, and Groups Meeting and Lunch............................................................. Meeting Room 5 (H) 

12:00 p.m. Exhibit Hall Lunch .................................................................................................................. West Exhibit Hall (CC) 

12:00 p.m. Job Information Forum and Lunch .......................................................................................... Salon E (H) 

12:00 p.m. Science Educators’ Workshop Lunch...................................................................................... Meeting Room 7 (H) 

3:00 p.m. Marketing and Communications Committee Meeting ............................................................ Greco Ballroom (H) 

3:20 p.m. Session Refreshment Break ..................................................................................................... West Exhibit Hall (CC) 

5:45 p.m. Magnetic Interfaces and Nanostructures Division Business Meeting ..................................... 16 (CC) 

6:00 p.m. Poster Session and Refreshments ............................................................................................ Central Exhibit Hall (CC) 

6:05 p.m. Electronic Materials and Processing Division Business Meeting ........................................... 9 (CC) 

6:05 p.m. Nanometer-scale Science and Technology Business Meeting ................................................ 12 (CC) 

6:05 p.m. Plasma Science and Technology Division Business Meeting ................................................. 24 (CC) 

6:05 p.m Surface Science Division Business Meeting ........................................................................... 22 (CC) 

6:05 p.m. Thin Film Division Business Meeting..................................................................................... 11 (CC) 

6:20 p.m. Electronic Materials and Processing Division Forum: Moore’s Law and Careers at Intel ..... 9 (CC) 

6:30 p.m. Chapter, Divisions, and Groups Committee Meeting and Dinner........................................... IL Terrazzo Restaurant (H) 

CC = Tampa Convention Center 

H = Tampa Marrriott Waterside Hotel & Marina 

58

MEETINGS AND SPECIAL EVENTS 

6:30 p.m. Manufacturing Science and Technology Group Committee Meeting and Dinner .................. Meeting Room 7 (H) 

6:30 p.m. MEMS and NEMS Technical Group Executive Committee Meeting and Dinner.................. Meeting Room 1 (H) 

6:30 p.m. Magnetic Interfaces and Nanostructures Division Executive Committee Meeting and Dinner..... Meeting Room 3 (H) 

6:30 p.m. Nanometer-scale Science and Technology Division Meeting and Dinner.............................. Meeting Room 5 (H) 

7:00 p.m. Biomaterial Interfaces Division Executive Committee Meeting and Dinner and 

Biointerphases Editorial Board Meeting and Dinner........................................................ TBD (Offsite) 

7:00 p.m. Electronic Materials and Processing Division Executive Committee Meeting and Dinner.... Meeting Room 2 (H) 

7:00 p.m. Plasma Science and Technology Executive Committee Meeting and Dinner......................... Meeting Room 6 (H) 

7:00 p.m. Surface Science Division Executive Committee Meeting and Dinner.................................... Meeting Room 8 (H) 

7:00 p.m. Thin Film Division Executive Committee Meeting and Dinner.............................................. Meeting Room 4 (H) 

7:30 p.m. Applied Surface Science Division Business Meeting.............................................................. Florida Ballroom I-III (H) 

8:00 p.m. ASTM E-42/ASSD Workshop, “XPS and Beyond: ISS, UPS, HIM, APT, and Other 

TLAs (Three Letter Acronyms)” ......................................................................................... Florida Ballroom V (H) 

8:30 a.m.-5:00 p.m. Short Course Program............................................................................................... Various Rooms (CC) 

10:00 a.m.-5:30 p.m. Equipment Exhibition................................................................................................. West Exhibit Hall (CC) 

10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) 

12:00 p.m.-2:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) 


WEDNESDAY, OCTOBER 31, 2012 

6:15 a.m. 32nd Annual AVS Run............................................................................................................ Bayshore Sidewalk (H) 



12:00 p.m. Exhibit Hall Lunch .................................................................................................................. West Exhibit Hall (CC) 

12:00 p.m. Nanometer-Scale Science and Technology Division Public Student Award Competition ........ 12 (CC) 

3:20 p.m. Session Refreshment Break ..................................................................................................... West Exhibit Hall (CC) 

4:30 p.m. E&M Reception (Invitation Only)........................................................................................... West Exhibit Hall (CC) 

4:40 p.m. Medard Welch Award Lecture, Y.J. Chabal, The Univ. of Texas at Dallas ........................... 22 (CC) 

6:15 p.m. AVS Awards Ceremony .......................................................................................................... Ballroom B (CC) 

7:15 p.m. AVS Awards Reception........................................................................................................... Florida Ballroom (H) 

8:30 a.m.-5:00 p.m. Short Course Program................................................................................................ Various Rooms (CC) 


10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 

12:20 p.m.-2:00 p.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 


THURSDAY, NOVEMBER 1, 2012 


7:00 a.m. Professional Leadership Committee Meeting and Breakfast................................................... Café Waterside Restaurant (H) 

8:00 a.m. Advanced Surface Engineering Division Business Meeting ................................................... Meeting Room 1 (H) 

8:00 a.m. Advanced Surface Engineering Division Executive Committee Meeting (Lunch Offsite)..... Meeting Room 1 (H) 

8:40 a.m. Peter Mark Award Lecture, C.H. Sykes, Tufts University...................................................... 22 (CC) 


12:00 p.m. Exhibit Finale and Refreshments............................................................................................. West Exhibit Hall (CC) 

12:00 p.m. Surface Science Division Mort Traum Awards Ceremony ..................................................... 22 (CC) 

12:00 p.m. Plasma Science and Technology Division Coburn and Winters Award Ceremony................ 24 (CC) 

12:15 p.m. 2013 AVS Program Committee Chairs’ Lunch....................................................................... Meeting Room 4 (H) 

12:15 p.m. AVS Business Meeting............................................................................................................ 25 (CC) 

6:00 p.m. Poster Session and Refreshments ............................................................................................ Central Exhibit Hall (CC) 

6:30 p.m. 2012/2013 Program Committee Reception and Dinner........................................................... Meeting Room 4 (H) 

7:00 p.m. Surface Science Spectra Editorial Board Dinner..................................................................... Meeting Room 3 (H) 




FRIDAY, NOVEMBER 2, 2012 



H = Tampa Marrriott Waterside Hotel & Marina 

59

AVS Short Course Information 

October 28 – November 2, 2012 


Tampa, Florida 

� 

Course Location and Hotel Accommodations 

All short courses will be held at the Tampa Convention Center (in 

conjunction with the AVS 59th International Symposium and 

Exhibition) located at 333 S. Franklin St, Tampa, FL. AVS is 

pleased to offer special rates at two Tampa hotels—Tampa 

Marriott Waterside Hotel & Mariana (HQ-/$187 single/double 

occupancy) and the Embassy Suites Tampa Downtown ($187 

single/double occupancy), plus tax. Housing reservations may be 

made online at 

http://www2.avs.org/symposium/AVS59/pages/greetings.html 

and click on Housing & Travel tab. Reservations must be made 

no later than October 5, 2012. 

Registration Deadline Policy 

Complete and return the registration form to enroll. Upon receipt 

of your registration form and payment, you will receive an e-mail 

confirmation with specific registration/course details. 

• Early Registration--Important! To ensure early registration 

rates please be sure your registration form and payment are 

received by the AVS office no later than September 28, 

2012. 

• Late (or Onsite) Registration-Following the September 28 

early registration deadline, course fees will be marked up 

$50 per course ($25 per course for students). If you choose 

to register onsite, it is on a first-come first-served basis. 

Please check class/space availability, 530-896-0477, 

heather@avs.org. 

• Cancellations: If notice of cancellation is received on or 

before October 12, 2012, fees will be fully refunded. After 

October 12, refunds will be given, less a $100 processing 

fee. No refunds/course credit for individuals who do not 

show up for their course(s). 

Registration Fee Discounts 

(Apply only one discount per registrant) 

• Multi-Course Discount provides a $300 discount for 

every three courses taken, by one person, at a specific 

short course program (i.e., the same location and 

calendar week). This offer excludes Full-time students. 

• Member’s Discount provides a $75 discount per 

location offering for current AVS members. This offer 

excludes Full-time students. 

• Full-time students may register at a discounted rate of 

$100/day for any course (student rates for each course 

are listed on the registration form). Please note, some 

courses include a supplemental textbook, however, as 

a student registrant the textbook is not included with 

your registration. 

AVS is not responsible for applying, or being aware that you may 

qualify for any discount. You may only select one discount option 

when registering. If you qualify for more than one discount, 

please select the greater of the two to be applied. 

60 

How To Register 

• By WWW: Complete the online registration form and 

press “Submit.” 

• By Fax/Phone: Fax your completed registration form to 

AVS at 530-896-0487. If you prefer to pay by check, you 

may first confirm your registration, call 

530-896-0477. 

• By Mail: Mail your completed registration form and payment 

to: AVS, 110 Yellowstone Dr., Ste. 120, Chico, CA 95973 

(AVS tax ID# 04-2392373). 

You will receive an e-mail confirmation letter with specific 

registration/course details. To check on the status of your 

registration, call 530-896-0477, or e-mail heather@avs.org. 

Schedule and Class Materials 

Courses will begin at 8:30 a.m., finish at 5:00 p.m., and have a 

1½ hour lunch break. Students are encouraged to visit the 

exhibition Tuesday, Wednesday and Thursday, during lunch and 

the morning/afternoon breaks. Lunch is NOT included. 

Attendees may obtain class materials at the short course 

registration desk during conference registration hours. The short 

course fee for some of the courses includes the cost of a 

published, hardcover textbook. Certificates of completion will be 

given to all students attending the full course. 

Dress Code 

Casual business attire. However, since room temperatures 

fluctuate, please bring a light sweater or jacket. 

Onsite Courses, Courses by Request and 

Information Request Forms 

Let AVS bring our short courses to you, complete the 

Onsite Course Request form, 

http://www.avs.org/education.onsite.form.aspx. 

Don’t see a course you want? Use the online Courses by 

Request form at http://www.avs.org/education.byrequest.aspx to 

make a suggestion. 

If you would like more information or would like to begin receiving 

notifications on upcoming course offerings in your area, contact 

AVS, 530-896-0477, or complete the Information Request form, 

http://www.avs.org/education.shortcourse.request.aspx.

AVS Short Course Registration Form 

October 28 – November 2, 2012 


Tampa, Florida 

For each course you wish to attend, please circle the cost listed 

to the right of the course name. For onsite registration, please 

add a $50 per course surcharge to your registration total. 

Courses (Regular/Student) 

Vacuum and Equipment Technology : 

NEW! Analysis of Mass Spectrometer (RGA) 

Spectra, 11/2 $575/$100 

Fundamentals of Vacuum Technology, 10/29–11/1 $1,495/$400 

UHV Design and Practices, 11/2 $575/$100 

Materials and Interface Characterization: 

X-ray Photoelectron Spectroscopy (XPS or ESCA) 

& Auger Electron Spectroscopy (AES), 10/29 $575/$100 

Focused Ion Beams (FIB) and Secondary 

Ion Mass Spectrometry (SIMS), 10/30 $575/$100 

Composition Depth Profiling, 10/31 $575/$100 

Comprehensive Course on Surface Analysis 

and Depth Profiling by XPS or ESCA, AES, 

FIB & SIMS, 10/29-31 (2 or 3 days) (10/29-30) $850/$200 

(10/29-31) $1,300/$300 

NEW! Industrial Ion Sources, 10/29 $575/$100 

Scanning Electron Microscopy and X-ray 

Microanalysis, 10/31 $575/$100 

Surface Characterization of Biomaterials, 11/1 $575/$100 

Materials Processing: 

Atomic Layer Deposition, 11/1 $575/$100 

Chemical Mechanical Planarization 

for Microelectronics Manufacturing, 10/29 $575/$100 

Photolithography Process in IC Production, 10/30, $575/$100 

Plasma Etching and RIE: Fundamentals, 10/30 $575/$100 

Plasma Etching and RIE: Fundamentals 

and Applications, 10/30-31, $850/$200 

Sputter Deposition, 11/2 $675/$100 

Subtotal: 

2012 AVS member’s discount 

subtract $75 from the subtotal: ____________ 

Multi-course discount (3 or more courses) 

subtract $300 from the subtotal: ____________ 

For onsite registration add $50 per course 

($25 per course for students) to your total: ____________ 

Tutorial (Regular/Student) 

Nanomanufacturing: Current Status and 

Future Prospects, 10/28 $100/$75 

Total enclosed: ____________ 

Full time students may register at a discounted rate of $100 per 

day for any course (except for the tutorial). Please note, some 

courses include a supplemental textbook, however, as a student 

registrant the textbook is not included with your registration 

61 

Payment Information: 

� Check enclosed (payable to AVS, 110 Yellowstone Dr., 

Ste. 120, Chico, CA 95973—AVS tax ID# 04-2392373) 

� Cash/Travelers Check 

Charge My: � MasterCard � VISA � AMEX 

Cardholder Name:_____________________________________ 

Card Number:________________________________________ 

Exp. Date:____________________ CCID#:_________________ 

Signature:___________________________________________ 

Registration Information 

Name:______________________________________________ 

Title:________________________________________________ 

Company:___________________________________________ 

Address:_____________________________________________ 

Mail Stop:____________________________________________ 

City:__________________ State:______ Zip Code:__________ 

Country:____________________ Province:________________ 

Phone:_____________________ Fax:____________________ 

E-mail:______________________________________________ 

� Check here if you are a full time student (12 or more credits) 

Advisor Name:________________________________________ 

Advisor E-mail:________________________________________ 

Nanomanufacturing: Current Status and Future 

Prospects Tutorial 

Sunday, October 28, 2012, 1:00 – 5:00 p.m. 

This tutorial will provide an introduction to nanomanufacturing. The 

tutorial begins by drawing the distinction between nanofabrication— 

the technology for making small things—and nanomanufacturing— 

the application of nanofabrication technologies to making money. 

This is followed by a discussion of the characteristics required of a 

nanomanufacturing process in terms of throughput, precision and 

defectivity, as it relates to the type and functionality of 

nanostructures being made. 

Next, specific examples are considered, with a detailed examination 

of the integrated circuit fabrication process and those factors that 

have led to it becoming the most successful current nanomanufacturing 

industry. This will serve as a baseline against which to 

compare and contrast new and emerging nanomanufacturing 

processes and applications ranging from nanocomposites to DNA 

selfassembly to tip-based, single-atom manipulation to nanoparticle 

drug delivery systems to optical metamaterials. 

Finally, nanomanufacturing complexity is considered in terms of 

product functionality and cost. 

For more information on this tutorial, please visit 

http://www.avs.org/education.schedule.aspx

AVS-59 Companion Tours 2012 - Tampa 

Let’s have fun in Tampa! With the much appreciated help 

from James Lyn Provo, I have a diverse week of activities 

for you to enjoy in Tampa. 

We’ll start off Monday with a tour of Ybor City, a national 

Landmark district. Our guides are Grandchildren of 

immigrants who came to Ybor City seeking their 

opportunity to work and achieve the American Dream. 

We’ll get a unique perspective of the “Latin Culture” as 

they show us the city that their descendants helped to 

develop. Companions will be given the choice to enjoy 

lunch at the world famous Columbia restaurant, which is 

Florida’s oldest and the world’s largest Spanish restaurant. In the afternoon we’ll be touring the Henry 

B. Plant Museum, which is housed in the 1891 Tampa Bay Hotel. The Museum interprets the turn of 

the century Tampa Bay Hotel and the lifestyles of the Rich and Famous during the “Gilded Age”. The 

museum will transport us to the Victorian period, the beginning of Florida’s tourist industry and the 

early years of the city of Tampa. 

Tuesday we will be going to experience Busch Gardens. Your ticket is a 1-Day admission to Busch 

Garden with second visit free, with validation at customer service inside the entrance gates. The 

tickets also include a meal voucher that you can redeem at any quick-serve restaurant in the park. 

These special admission tickets, with second visit free and meal voucher, are available for 

companions, attendees and exhibitors. They are good from Oct. 28 – Nov 6. They need to be 

pre-ordered. Transportation is only available for our Tuesday outing. 

We’ll be exploring the Tampa Aquarium on Wednesday. We’ll have the opportunity to see more than 

20,000 aquatic animals and plants from playful river otters to intimidating sharks during our visit. For 

the brave at heart, you can touch a bamboo shark in the lobby touch tank or a sea star in the No Bone 

Zone. We’ll also be able to come face-to-beak with endangered penguins during their daily Penguin 

Promenades. After lunch at the aquarium, we will depart on the Wild Dolphin Cruise, an entertaining 

tour aboard the Bay Sprit II, a 72 foot powered catamaran. During our 90 minute cruise we will be 

able to view some of the 500 wild dolphins who call Tampa Bay home. 

Thursday we’ll be venturing to St. Petersburg, where we will be visiting the Dali Museum and the 

Chihuly Glass Collection. At the Dali Museum, we will visit the most comprehensive collection of 

works by the late Spanish surrealist, Salvador Dali. We’ll enjoy a private docent tour, in a new 

museum that includes headphones for maximum enjoyment, while enjoying breathtaking views of 

Tampa Bay as we go thru the new galleries within this “glass enigma”. In the afternoon, we’ll enjoy a 

docent led tour of the Chihuly Collection. This presentation is unique because it is the first installation 

of Chihuly art in a building that was designed especially for that purpose. The art and the architecture 

of the museum both work together to create an experience unlike any other Chihuly art exhibition. We 

will also visit the Morean Arts Center Glass Studio and the Hot Shop where we’ll watch glassblowers 

create one-of-a-kind pieces. 

Again this year, we will have a room to gather in every morning, so plan to bring your breakfast and 

join us even if you are not coming on a tour that day. 

I hope you will enjoy the program that I’ve planned and hope you’ll join us in the fun of exploring Tampa! 

Marilyn Ruzic, Tour Coordinator 

companiontours@avs.org 

***************************** 

62

Please note: ALL of these tours have a minimum number of required participants for the 

tour to go OR to qualify for special pricing. Please sign up before the deadline, if possible, 

***************************** 

Marilyn Ruzic will be available in the AVS Registration area in the Lobby of the Tampa Convention 

Center from 2 – 6 on Sunday, and in our breakfast area before the start of each tour. She will be 

happy to assist with any questions. If Marilyn is not available, please consult the staff at the AVS 

Registration Manager’s counter and they will contact her for you. 

******************************** 

Monday, October 29 th : Classic Ybor City National Historic Landmark 

District Tour and Henry B. Plant Hotel Museum Tour 

8:00 a.m. Meet in the gathering breakfast room 

8:45 a.m. Meet our tour guides in the lobby and board our bus. 

9:00 a.m. Depart for our city tour of Ybor City Museum State Park: 

� The Ferlita Bakery 

� La Cassita: The cigar maker’s house museum 

� Replica of a European Style Garden 

� The Museum Store 

Riding tour of “La Setima” 

� The Italian Club 

� Central Ybor 

� The Ritz Theater 

� Jose Marti Park 

� The El Pasaje Hotel 

La Segunda Central Bakery 

El Centro Asturiano De Tampa 

12:00-2:00 p.m. Lunch on your own with suggestions of guides 

OR 

World Famous Columbia Restaurant 

Advanced reservations are required because the wait would be too long for 

walk-ins. You need to indicate your decision when you register for the tour 

Menu can be checked out at: www.columbiarestaurant.com 

2:00 p.m. Henry B. Plant Museum Tour 

4:30 p.m. Return to hotel 

PRICE: $ 72.00 Before Oct. 1 st 

$ 82.00 After Oct. 1 st 

63

***************************** 

Tuesday, October 30 th : Day at Busch Gardens 

Special: 1 day ticket with 2 nd day free and meal voucher available for attendees w/o 

transportation to use between Oct. 29 and Nov.6th 

8:45 a.m. Gather in meeting room 

9:20 a.m. Meet in the lobby and board the bus 

10:00 a.m. We will be dropped off at Busch Gardens where everyone will be on their own 

or in small groups of their choice 

We will go to Customer Service to validate 2 nd day free admission 

5:30 p.m. Meet bus to return to the hotel 



$ 96.00 No transportation included; Offer valid from Oct. 29–Nov. 6 

***************************** 

Wednesday, October 31 st : Florida Aquarium & Wild Dolphin Cruise 

9:00 a.m. Gather in meeting room 

9:30 a.m. Walking to the Aquarium along The Riverwalk 

Stopping to see things is part of the adventure! 

10:00 a.m. Aquarium exploration on our own 

1:45 p.m. Board catamaran Bay Sprit II for cruise (1.5 hour) 

3:30 p.m. Return to hotel by walking or trolley ($2.50) 

Or 

Explore Aquarium more and return to hotel at your leisure 



64

***************************** 

Thursday, November 1 st : The Dali Museum, Chihuly Collection, 

Glass Studio & Hot Shop 

9:00 a.m. Meet in greeting room 

9:30 a.m. Meeting in the lobby and board the bus 

10:00 a.m. Docent guided tour of the Dali Museum 

12:00 p.m. Lunch on our own 

1:00 p.m. Docent guided tour of the Chihuly Collection 

Glass Studio and Hot Shop 

4:30 p.m. Return to hotel 



65

32nd Annual AVS RUN 

. . . the Oldest Professional Society Run in the World! 

When: Wednesday, October 31, 2012 

Venue: AVS 59th International Symposium 

Distance: 5 x 10 12 nm (5 km for non-nanos) 

Time 6:15 a.m. 

Place: Along the Bayshore Sidewalk, Tampa 

Fee: $30.00 

Our 32nd Annual AVS Run, the oldest professional society Run on our planet, will be held with 

our AVS 59th International Symposium & Exhibition in Tampa, Florida. This year’s race will take place along 

the Bayshore Sidewalk, the longest continuous sidewalk in the world! The start and finish is within walking distance 

of the Tampa Convention Center. With your entry fee you will receive a run t-shirt, race number, and 

awards. Also, this year’s race will be chip-timed! The run records are still held by Mike Martini (who ran this 

event in an astounding 14:46!) and by Heidi Denton (18:17). 

The race will be held on Wednesday morning at a time that will allow runners to make the 

first sessions. The awards ceremony will be held Wednesday noon – at the Run-registration area. The COR- 

PORATE RACE and the DIVISIONS AND GROUPS RACE will be highlights again this year. Each team representing 

a corporate entity (university, unemployed, research organization, manufacturer, etc.) or 

Division/Group must have 3 team members to qualify. Times are handicapped by age and sex. In the interest 

of enhancing the already billowing AVS membership, non-AVS members will be time penalized. 

The CORPORATE CUP is still held by the fast, but now-ageing BATTELLE PNL team – 

which expects to be challenged more than ever this year. The DIVISIONS/GROUPS CUP in Nashville was 

captured by the VTD (I think)! Contact the Race Director with questions or suggestions (bridget_rogers@ 

avs.org). See you in Tampa! 

Please register by October 15, 2012 

Attendee Name: 

Company: 

Address: 

Address 2: 

City: State: Postal Code: Country: 

Phone: Fax: E-Mail: 

Sex: Male : Female: Age: 

AVS Member: Yes : No : 

Shirt Size: S M L XL XXL 

Race and Shirt: $30.00 

Check (Make payable to AVS in U.S. dollars and drawn on a U.S. bank, AVS Tax ID No: 04-2392373) 

AMEX 

Card Number: 

MasterCard VISA 

Cardholder Name: 

CCID 

Expiration Date 

66

CONFERENCE OVERVIEW 

The ICMCTF is the premier international conference in the field of thin-film deposition, characterization, and 

advanced surface engineering, 

promoting global exchange of ideas and information among scientists, 

technologists, and manufacturers. The conference includes more than 80 high-profile invited speakers across 

eleven symposia, along with focussed topic sessions, short courses, equipment exhibition, and social events. 

GENERAL CHAIR 

Paul Mayrhofer 

Montanuniversitaet Leoben 

Leoben, Austria 

paul.mayrhofer@unileoben.ac.at 

http://www2.avs.org/conferences/ICMCTF/ 

Sponsored by the AVS Advanced Surface Engineering Division 

A Coatings for Use at High Temperature G Applications, Manufacturing and Equipment 

B Hard Coatings and Vapor Deposition Technology TS1 Surface Engineering for Thermal Transport, 

C Fundamentals and Technology of Multifunctional Storage and Harvesting 

Thin Films: Towards Optoelectronic Device Applications TS2 Characterization: Linking Synthesis, 

D Coatings for Biomedical and HealthcareApplications Properties and Microstructure 

E Tribology & Mechanical Behavior of Coatings TS3 Energetic Materials and Micro-Structures 

and Engineered Surfaces for Nanomanufacturing 

F New Horizons in Coatings and Thin Films TS4 Graphene and 2D Nanostructures 

PLENARY LECTURE EXHIBITION KEYNOTE 

“Designer Materials for 

LECTURE 

Unconventional Electronics” 

“Atmospheric Pressure 

Tobin Marks 

Plasmas for Inline Coatings: 

Professor of Chemistry and 

Status and Challenges” 

Materials Science and 

Francoise Massines 

Engineering, Northwestern 

Directeur de Recherches au 

University, USA 

CNRS, Perpignan, France 

PROGRAM CHAIR 

Yip-Wah Chung 

Northwestern University 

Evanston, Illinois, USA 

ywchung@northwestern.edu 

Mark Mark your your calendar 

Abstract submission deadline: 

Awards nomination deadline: 

Manuscript submission deadline: 

Conference pre-registration deadline: 

ICMCTF MANAGER 

Phyllis Greene 

pgreene@mrl.uiuc.edu 

ICMCTF SECRETARY 

Mabel Zabinski 

icmctf@icmctf.org 

October 1, 2012 

October 1, 2012 

March 1, 2013 

March 23, 2013 

Abstract submission deadline: October 1, 2012 

Awards nomination deadline: October 1, 2012 

Manuscript submission deadline: March 1, 2013 

Conference pre-registration deadline: March 23, 2013 

EXHIBIT MANAGER 

Jeannette DeGennaro 

AVS 

jeannette@avs.org

Journal for Quantitative Biological 

Interface Data 

■ Open Access 

■ Quantitative Data on Biological and 

Soft Matter Interfaces 

■ Experiments, Modeling, Theory and 

Applications 

■ Only journal in this subject area 

www.biointerphases.org 

Biointerphases is a peer-reviewed open access journal published under the brand SpringerOpen. It is an 

interdisciplinary journal which explores all aspects of quantitative soft matter interfaces: chemistry, physics, 

engineering, theory and modeling. Topics covered include interface spectroscopy, in vivo and in vitro 

mechanisms, interface modeling, adhesion phenomena, protein-surface interactions, biomembranes on a 

chip, cell-surface interactions, biosensors/biodiagnostics, bio-surface modification, the nano-bio interface, 

biotribology/biorheology, molecular recognition, cell patterning for function, polyelectrolyte surfaces, and 

ambient diagnostic methods. In addition to regular submissions, the journal features In Focus sections 

examining specific topics and edited by experts in the field. 

Editor-in-Chief: Michael Grunze, Universität Heidelberg 

“Biointerphases is an excellent information source for research in the fi eld of cell adhesion and mechanics with 

growing importance.” 

— Dr. Joachim Spatz, MPI Intelligent Systems & University of Heidelberg 

“The themed issues of Biointerphases provide valuable, in-depth accounts of the current state of research in specifi c 

topic areas of biointerface science.” 

— Dr. Stefan Zauscher, Duke University 

AVS Publications Offi ce 

100 Park Drive, Suite 105, Caller Box 13994 


919-361-2787 • Fax 919-361-1378 • publications@avs.org 

Visit us online at www.avs.org

Journal of Vacuum Science & 

Technology A 

■ Surfaces 

■ Films 

■ Vacuum 

www.jvsta.org 

Understanding interfaces and surfaces at a fundamental 

level and using this understanding to advance the state-of- 

the-art in various technological applications applications defines the scope of 

the Journal of Vacuum Science and Technology A. . This journal is devoted to 

publishing reports of original research, letters, letters, and review articles. articles. 

Website Features Research Highlights, Most Cited, and Most Downloaded 

Topics include but are not limited to: 

• Applied and fundamental surface science 

• Atomic layer deposition 

• Electronic and photonic materials and their processing 

• Magnetic thin fi lms and interfaces 

• Materials and thin fi lms for energy conversion 

and storage 

• Photovoltaics including thin-fi lm solar cells and organic 

and hybrid solar cells 

• Plasma science and technology including plasma 

surface interactions, plasma diagnostics plasma 

deposition and etching and applications of plasmas 

to micro- and nanoelectronics 

• Surface Engineering 

• Thin fi lm deposition, etching, properties and 

characterization 

• Transmission electron microscopy including in situ 

methods 

• Tribology 

• Vacuum science and technology 

Editor-in-Chief: Eray S. Aydil, University of Minnesota 






Journal of Vacuum Science & 

Technology B 

■ Nanometer Structures 

■ Microelectronics 

■ Processing, Measurement, Phenomena 

www.jvstb.org 

The Journal of Vacuum Science and Technology B is 

devoted to publishing reports of original research, letters, 

and review articles on microelectronics and nanometer structures 

and devices. The emphasis is on processing, measurement and phenomena 

associated with micrometer and nanometer structures and devices. devices. Processing may 

include vacuum processing, plasma processing and microlithography among others, while measurement refers 

to a wide range of materials and device characterization methods for understanding the physics and chemistry 

of submicron and nanometer structures and devices. 

Website Features Research Highlights, Most Cited, and Most Downloaded 

Topics include but are not limited to: 

• Compound semiconductor electronics and 

optoelectronics 

• Devices for energy conversion and storage 

• Dielectrics in micro- and nanoelectronics 

• Graphene, carbon nanotubes and fullerenes: 

materials & devices 

• Group IV semiconductor microelectronics 

• Lithography 

• Microelectromechanical and nanoelectromechanical 

systems and devices (MEMS & NEMS) 

• Nanometer science and technology 

• Nanostructured materials and devices including 

nanowires, nanoparticles and quantum dots, 

• Organic and molecular electronics 

• Photovoltaics based on nanostructured materials, 

dye-sensitized and other excitonic solar cells 

• Plasmonics 

• Spintronics and magnetic devices 

• Vacuum nanoelectronics 

Editor-in-Chief: Eray S. Aydil, University of Minnesota 






Journal and Database for Individuals 

or Analytical Laboratories 

■ Reference Spectra 

■ Spectra from Technological Materials 

■ Comparison Spectra from Well-Defi ned 

Materials 

http://avspublications.org/sss 

Surface Science Spectra is an international journal devoted to archiving 

spectra from from surfaces surfaces and interfaces. Data records are peer-reviewed and 

technically edited. Spectral descriptions include much much more more detail - instrument description, 

calibration, and raw spectral data - than traditional journals. SSS offers XPS, Auger, UPS, SIMS, 

EELS/HREELS spectra from a wide range of materials. 

Add a cost-effective tool to your lab or library. 

SSS Online FREE to AVS Members. 

Non-Members $150 per calendar year. 

Submit at www.publishinsss.com 

• Includes data from over 110 labs worldwide 

• Contributions from over 480 authors 

• 4,170 individual spectra from more than 780 

different materials 

Editors: James E. Castle, University of Surrey and 

Richard T. Haasch, University of Illinois 

“SSS is a valuable database for all the community working 

on the XPS of organic and inorganic Materials.” 

— Dr. Davide Barreca, U. Padova Download digital data by clicking on the blue accession 

number located in the caption of each fi gure. 




919-226-0091 • Fax 919-361-1378 • sss@avs.org 


UPPER LEVEL 

LOWER LEVEL 


72

Technical Sessions 

Key to Session/Paper Numbers 

AC Actinides and Rare Earths Focus Topic 

AS Applied Surface Science 

BI Biomaterial Interfaces 

BN Biointerphases Focus Topic: Bioimaging 

BP Biomaterials Plenary Session 

EL Spectroscopic Ellipsometry Focus Topic 

EM Electronic Materials and Processing 

EN Energy Frontiers Focus Topic 

ET Electron Transport at the Nanoscale Focus Topic 

EW Exhibitor Technology Spotlight 

GR Graphene and Related Materials Focus Topic 

HI Helium Ion Microscopy Focus Topic 

IS In Situ Microscopy and Spectroscopy Focus Topic 

LB Late Breaking Session 

MB Biofilms and Biofouling: Marine Medical Energy Focus Topic 

MI Magnetic Interfaces and Nanostructures 

MN MEMS and NEMS 

MS Manufacturing Science and Technology 

NM Nanomanufacturing Science and Technology Focus Topic 

NS Nanometer-scale Science and Technology 

OX Oxide Heterostructures-Interface Form & Function Focus Topic 

PS Plasma Science and Technology 

SE Advanced Surface Engineering 

SP Scanning Probe Microscopy Focus Topic 

SS Surface Science 

TC Transparent Conductors and Printable Electronics Focus Topic 

TF Thin Film 

TR Tribology Focus Topic 

VT Vacuum Technology 

Sessions sponsored by two divisions are labeled with both acronyms (e.g. EM+SS), 

then: a number to indicate parallel sessions sponsored by the same division (e.g. SS1, SS2), 

then: a dash followed by the first two characters of the day of the week: 

Monday, Tuesday, Wednesday, Thursday, Friday, 

then: Morning, Afternoon, Lunch, Poster, 

then: a number to indicate the time slot scheduled for each paper. 

Example: SS1-MoM9 (Surface Science, Monday morning, 11:00 am). 

73

Room/ 

Day 

SuA 

MoM 

MoA 

TuM 

TuL 

TuA 

TuP 

WeM 

WeL 

WeA 

ThM 

ThL 

ThA 

ThP 

FrM 

6 7 9 10 11 12 13 14 15 

AC+MI+SS+TF 

Electronic 

Structure and 

Spectroscopy of 

Actinides 

AC+TF+SS+MI 

Actinides and 

Rare Earths: 



AC+EN 

Energetic Mtls 

Issues for Nuclear 

Power: Fuels, 

Corrosion and 

Waste Disposal 

MI+EN+BI 

Fundamental 

Problems in 

Magnetism 

MI 

Topological 

Insulators and 

Rashba 

MI+OX 

Spintronics, 

Magnetoelectric, 

Multiferroics 

MI+SP+AS 

Emerging Probes 

in Magnetic 

Imaging, 

Reflectometry and 


OX+EM+MI+ 

NS+TF 

Structure–Property 

Relationships in 

Epitaxial Oxide 

Interfaces 

OX+SS+TF+MI 

Chemistry of 

Oxide Surfaces 


IS+AS+SS+EN 

In Situ Spectroscopic 

Studies of 

Catalysis and Gas- 

Solid Reactions 

IS+AS+BI+ET+ 

GR+NS 

In Situ Studies of 

Organic and Soft 

Materials and In 

Situ Microscopy 

IS+AS+OX+ET 

In Situ 


of Solids: Film 

Growth, Defects, 


TC+EM+AS 

Printable and 

Flexible 

Electronics 

TC+EM+AS+ 

TF+EN 

Transparent 

Conductors and 

Devices 

EN+NS 

Thermophotovolt 

aics, 

Thermoelectrics 


EM+TF+OX 

+GR 

High-k 


MOSFETs I 

EM+TF+OX 

+GR 

High-k 


MOSFETS II 

EM 

Electrical Testing 

and Defects in 

III-V’s 

EM 

Materials and 

Processes for 

Advanced 

Interconnects 

EM+TF 

Hybrid 

Electronic 

Materials and 

Interfaces 

EM+OX 

Oxides and 


Novel Devices 

and Ultra-dense 

Memory 

EM 

Processing for 

Ultra Low Power 

Electronics + 

Semiconductor 


EM+MI 

Semiconductor 


II + Heusler 

Alloys 

MN+AS 


of Surfaces and 

Interfaces in 

MEMS and 

NEMS 

MN 

Multi-scale 

Interactions of Mtls 

and Fabrication at 

the Micro- and 

Nano-scale 

MN 

Optomechanics 

and Photonic 

MEMS and 

NEMS 

TF+AS 

Modeling and 

Analysis of Thin 

Films 

TF 


Encapsulation, 

Packaging, and 

Biomedical 

Devices 

TF+MI 


Memory and 

Data Storage 

TF+EM+SE+NS 

Nanostructuring 

Thin Films 

TF+EM+SS 


Self-Assembled 

Monolayers and 

Layer-by-Layer 

Assemblies 

TF 

ALD Enabled 

Applications 

TF+EN 


TF 

ALD Reactions 

and Film 

Properties 

TF2 

ALD for Hybrid 

Films and 


TF+SE+NS 

Glancing Angle 

Deposition 

(GLAD) 

TF+AS 

Thin Films: 

Growth and 


I 

TF+NS+EM 

Thin Films: 

Growth and 


II 

TF+AS+SS 

Thin Films: 

Growth and 


III 

74 

2012 Technical Program 

NS 

Nanoparticles 

and Quantum 

Structures 

NS+SP 

Nanopatterning 

and 

Nanolithography 

NS+EN 

One-Dimensional 

Nanowires and 

Nanotubes 

NS+EN+GR 

Nanomaterials in 

Two and Three 

Dimensions 

NS+AS+SS+SP 

Nanoscale 

Catalysis and 

Surface 

Chemistry 

NS 

Nanophotonics 


NS 

Nanoscale 

Imaging and 

Microscopy 

GR+EM+NS+ 

PS+SS+TF 

Graphene 

Growth 

GR+EM+ET+ 

NS+TF 

Electronic 

Properties and 

Charge Transport 

GR+AS+EM+ 

MI+MN 

Optical, Magnetic, 

Mechanical and 


GR+AS+NS+SP 

+SS 

Graphene 


Incl. Microscopy 

and Spectroscopy 

GR+AS+BI+PS 

+SS 

Graphene Surface 

Chem., Functionalization, 

Biological & 

Sensor Applications 

GR+AS+EM+ 

NS+SS 

Dopants & Defects 

in Graphene; 

Graphene Interfaces 

w/Other Materials 

GR+AS+NS+SS 

Graphene 


GR+EM+NS+ 

SS+TF 

Beyond Graphene: 

BN & Other 2D 

Elect. Mtls; 2D 


GR+EM+ET+ 

MS+NS 

Graphene Device 

Physics and 

Applications 

VT 

Vacuum Gauging 

and Metrology 

VT 

Gas Flow, Leaks, 

Permeation and 

Mass Analysis 

VT 

Pumping, Gas 

Dynamics and 

Modeling 

VT 

Accelerator and 

Ultra-Clean 

Vacuum Systems 

VT+AS+SS 


and Vacuum 

Manufacturing 

for Accelerators 

LB+EM+GR+ 

MN+TR 

Select Topics in 

Surface and 

Interface Science 

EM+SS+AS+NS 

Nanoelectronic 

Interfaces, 

Materials, and 

Devices 

EM+TF+AS 

Growth and 


of Group III- 


EM+NS 

Low-Resistance 

Contacts to 


EN+NS 


Solar Cells 

EN+TF 

Chalcogenide 

Solar Cells I 

EN+TF 

Chalcogenide 

Solar Cells II 

EN+TF 

Thin Film, 

Heterostructured, 

and Organic 

Solar Cells 

EN+PS 

Plasmas for 

Photovoltaics 

and Energy 

Applications 

EN+TF 


Energy 

Applications 

EN+NS 

Batteries and 

Fuel Cells 

EN+AS 


of Energy 

Materials and 

Systems 

EN+SS 


and Solar Fuels

at a Glance 

16 19 20 21 22 23 24 25 Central Hall West Hall 

NM+AS+MS 

Metrology and 

Environmental 

Issues in Nanomanufacturing 

NM+NS+MS+ 

EM 

ALD & Scalable 

Processes for 

Nano- 

manufacturing 

NM+MS 

All Invited Session: 

Challenges of 


from an Industrial 

Perspective 

SP+AS+BI+ET 

+MI+NS 

Advances in 

Scanning Probe 

Imaging 

SP+AS+BI+ET 

+MI+NM+NS+ 

SS+TF 

Probe-Sample 

Interactions, Nano- 

Manipulation and 

Fabrication 

SP+AS+BI+ET 

+MI+TF 

Emerging 

Instrument 

Formats 

ET+NS+EM 

Electron 


Nanoscale: 

Nanowires and 

Junctions 

ET+SS+GR+SP 

Electron 


Nanoscale: 

Molecules and 

Defects 

ET+SS+GR+SP 

Electron Transport 

at the Nanoscale: 

Development of 

Theories and 

Techniques 

EL+TF+AS+ 

EM+SS+PS+ 

EN+NM 

Spectroscopic Ellipsometry 

for Photovoltaics 

& Semiconductor 

Mfg. 

EL+TF+BI+AS 

+EM+SS 

Spectroscopic Ellipsometry: 

From 

Organic & Biological 

Systems to Inorganic 

Thin Films 

TR+BI 

Self Healing Coatings, 

Bio-Inspired 

Design, and Frictional 

Properties of 


TR 

Molecular 

Origins of 

Friction and 

Wear 

TR+SE 

Tribology and 

Wear of Low- 

Friction 

Coatings and 

Materials 

HI+AS+NS 

Basics of 

Helium Ion 

Microscopy 

HI+AS+BI+NS 

Imaging and 

Lithography 

with the Helium 


AS 

Quantitative 


– Part 1 

AS 

Quantitative 


– Part 2 

AS+BI 

Practical Surface 

Analysis 

AS+BI 

Surface Analysis of Mtls 


(2:00-3:20pm) / 

Multi-Technique 


AS 

Surface Analysis of 

Biological Mtls 


(8:00-10:00am) / 

3D Imaging – Part 1 

(10:40am-12:00pm) 

AS+NS+SS+TF 

3D Imaging - Part 2 

(2:00-3:20 pm) / 

Advanced Data 

Analysis & Instrument 

Control (4:00-6:00 pm) 

AS 


Large Cluster 

Ion Beams _ 

Part 1 

AS 

Large Cluster Ion Beams - 

Part 2 (2:00-3:20 pm) / 

Surface Analysis w/ 

Synchrotron Techniques 

(3:40-5:40 pm) 

AS+TF+VT 


using 

Synchrotron 

Techniques 

SS 

Nonequillibrium 

and Nonlinear 

Processes 

SS 

Surface 

Dynamics 

SS 

Surface 

Reactivity of 

Oxides 

SS+NS 

Reactivity of 

Size and Shape 

Selected 

Nanoparticles 

SS 

Chemisorption 

on Metallic 

Surfaces 

SS 

Catalysis on 

Metals and 

Alloys 

SS+EN+OX 

Catalysis and 


on Oxides 

SS+NS 


of 


SE+NS 



Coatings I: 

Interface 

Aspects 

SE+NS 



Coatings II: 

Multifunctional 

Properties 

SE+PS 

Pulsed Plasmas 

in Surface 

Engineering 

SE+PS 

Atmospheric 

Pressure 

Plasmas 

SS+OX 

Synthesis and 


of Oxides 

SS+EM 

Semiconductor 

Surfaces 

SS 

Molecular 

Films: Chirality 

& Electronic 

Features 

SS 

Liquid/Surface 

Interactions 

BP+AS 

Biomaterials 

Plenary - 

Bioimaging: In 

Vacuo, In Vitro, 

In Vivo 

BI 

Surfaces to 

Control Cell 

Response 

BI 

Cell-Surface 

Interactions: 

High 

Throughput 

Methodologies 

BI+SS+AS 

Biomolecules at 

Interfaces 

BI+AS 


of Biointerfaces 

BI+SS+NS 

Bio/Nano 

Interfaces with 

Applications in 

Biomedicine and 

Energy 

75 

BN+AS 

Bioimaging 

MB+BI 

Biofilms and 

Biofouling in 

Medicine 

MB+BI 

Marine 

Biofouling 

PS+EM 

Atmospheric 

Plasma 

Processing and 

Micro Plasmas 

PS+BI 

Applications of (Multiphase) 

Atmospheric 

Plasmas (incl. 

Medicine & Bio- 

logical Applications) 

PS1 

Plasma 

Diagnostics, 

Sensors and 

Control 1 

PS1 

Plasma 

Deposition and 

Plasma 

Enhanced ALD 

PS+TC 

Atmospheric 


for PV, Flexible 

Electronics (incl. 

R2R) 

PS1 

Plasma 

Diagnostics, 

Sensors and 

Control 2 

PS1 


for Disruptive 

Technologies 


PS 

Advanced 

FEOL/Gate 

Etching 1 

PS2 

Plasma 

Modeling 

PS2 

Advanced 

FEOL/Gate 

Etching 2 

PS2 


Interaction 

during Plasma 

Etching 

PS 

Advanced 

BEOL/Interconn 

ect Etching 

PS2 


Interactions 

during PECVD 

and Plasma 

Surface 

PS2 

Low Damage 

Processing 

PS 


POSTER 

SESSIONS 

(AS, BI, EL, IS, 

MN, NM, OX, 

SE, SS, TR, VT) 

POSTER 

SESSIONS 

(EM, EN, GR, 

HI, MI, NS, PS, 

TC, TF) 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight 

EW 

Exhibitor 

Technology 

Spotlight

SUNDAY SPECIAL EVENTS 

7:30 a.m. Fourteenth Topical Conference on Quantitative Surface Analysis (QSA 14)—20 (CC) 

8:45 a.m. AVS Board of Director’s Meeting—Meeting Room 1 (H) 

12:30 p.m. AVS Board of Director’s Lunch—Meeting Room 2 (H) 

1:00 p.m. Tutorial: Nanomanufacturing: Current Status and Future Prospects—16 (CC) 

2:00 p.m. Companion Tour Registration—Level 2 Lobby (CC) 

2:00 p.m. JVST Associate Editor’s Meeting—Meeting Room 3 (H) 

4:00 p.m. Biomaterials Plenary Session and Reception—23 (CC) 

4:00 p.m. International Interactions Committee Meeting—Meeting Room 2 (H) 

6:00 p.m. Professional Development Workshop: Skills for Industrial Scientists & Engineers—16 (CC) 

6:00 p.m. Science Educators’ Workshop Teachers’ Reception—Meeting Room 9 (H) 

6:00 p.m. Vacuum Technology Division Executive Committee Meeting and Dinner—Meeting Room 4 (H) 

7:00 p.m. ASTM E-42 Business Meeting—20 (CC) 

7:00 p.m. Short Course Committee Meeting—Bayshore Boardroom (H) 

7:00 p.m. International Dignitaries & Chapter Chairs Reception (Invitation Only)—Presidential Suite (H) 


H = Tampa MarriotWaterside Hotel & Marina 

76

NOTES 

77

Biomaterials Plenary Session 

Room: 23 - Session BP+AS-SuA 

Biomaterials Plenary - Bioimaging: In Vacuo, In Vitro, In Vivo 

Moderator: M.R. Alexander, University of Nottingham, UK 

4:00 pm BP+AS-SuA1 Invited 

NanoBio Imaging for New Biomedical Applications, D.W. MOON, Korea 

Research Institute of Standards and Science 

4:20 pm Invited talk continued. 


3-D View into Cells by X-ray Nano-Tomography, G. SCHNEIDER, P. 

GUTTMANN, S. WERNER, K. HENZLER, S. REHBEIN, Helmholtz-Zentrum Berlin für 

Materialien und Energie GmbH, Germany 



Nanoscopy with Focused Light, S.W. HELL, Max-Planck-Institut für Biophysikalische 

Chemie, Germany 


6:00 pm 

6:20 pm 

Sunday Afternoon, October 28, 2012 

78

Lunch 

Anticipated Schedule 

Sunday Morning, October 28, 2012 

TIME SESSION ROOM 

8:00 am ______________________________________________________________________________________________________________________________________________ 

8:20 am ______________________________________________________________________________________________________________________________________________ 

8:40 am ______________________________________________________________________________________________________________________________________________ 

9:00 am ______________________________________________________________________________________________________________________________________________ 

9:20 am ______________________________________________________________________________________________________________________________________________ 

9:40 am ______________________________________________________________________________________________________________________________________________ 

10:00 am ______________________________________________________________________________________________________________________________________________ 

10:20 am ______________________________________________________________________________________________________________________________________________ 

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79

MONDAY SPECIAL EVENTS 

7:00 a.m. Companion Tour Registration—Main Lobby (H) 

8:00 a.m. Science Educators’ Workshop—Meeting Room 6 (H) 

8:20 a.m. Albert Nerken Award Lecture, S. Tougaard, Univ. of Southern Denmark—20 (CC) 

12:00 p.m. Plenary Lecture, Joel E. Kostka, Georgia Institute of Technology, 

“The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?”—Ballroom B (CC) 

12:00 p.m. Science Educators’ Workshop Lunch—Meeting Room 7 (H) 

1:00 p.m. 2013 AVS Program Committee Meeting and Lunch—Florida Ballroom VI (H) 

1:15 p.m. Professional Development Seminar: JVST Writer’s Workshop—Florida Ballroom V (H) 

5:20 p.m. Biomaterial Interfaces Division Business Meeting—23 (CC) 

5:30 p.m. Electronic Materials and Processing Division Forum: Careers at LAM Research Reception—9 (CC) 

5:30 p.m. Welcome Mixer—Riverwalk (CC) 

7:00 p.m. Applied Surface Science Division Executive Committee Dinner—Meeting Room 5 (H) 

7:00 p.m. Professional Development Seminar: Federal Funding & Research Opportunities Town Hall—Florida V (H) 

7:15 p.m. Publications Committee Meeting and Dinner—TBD (Offsite) 

7:30 p.m. Thin Film Division Award Presentation—Meeting Room 1 (H) 



MONDAY SHORT COURSES 

8:30 a.m. Fundamentals of Vacuum Technology 

8:30 a.m. X-ray Photoelectron Spectroscopy (XPS or ESCA) 

& Auger Electron Spectroscopy (AES) 

8:30 a.m. A Comprehensive Course on Surface Analysis and Depth Profiling by X-Ray Photoelectron Spectroscopy (XPS or 

ESCA), Auger Electron Spectroscopy (AES), Focused Ion Beam Analysis (FIB) and Secondary Ion Mass Spectroscopy (SIMS) 

8:30 a.m. Chemical Mechanical Planarization for Microelectronics Manufacturing 

8:30 a.m. Industrial Ion Sources 

LOCATION: All AVS Short Courses will be held at – Tampa Convention Center 

COURSE HOURS: All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (Lunch not included) 

80

NOTES 

81


Room: 6 - Session AC+MI+SS+TF-MoM 

Electronic Structure and Spectroscopy of Actinides 

Moderator: A.J. Nelson, Lawrence Livermore National Laboratory 

8:20 am AC+MI+SS+TF-MoM1 Invited 

Electron Correlation and Magnetic Effects in the Actinides and Rare 

Earths, P.A. SÖDERLIND, Lawrence Livermore National Laboratory 

8:40 am Invited talk continued. Invited talk continued. 


Strong Correlations and the Electronic Structure of the Actinide Dioxides, 

R.L. MARTIN, Los Alamos National Laboratory 


Room: 20 - Session AS-MoM 

Quantitative Surface Chemical Analysis, Technique 


Moderators: J.A. Ohlhausen, Sandia National Laboratories, 

S. Suzer, Bilkent University, Turkey 

AS-MoM1 Invited 

2012 AVS Albert Nerken Award Lecture: Characterization of Thin-Film 

Nano-Structures by XPS, S. TOUGAARD*, University of Southern Denmark 

AS-MoM3 Simulation of Electron Spectra for Surface Analysis (SESSA): 

(Hard) X-ray Photoelectron Spectra of Nanostructured Surfaces, W.S.M. 

WERNER, W. SMEKAL, Vienna University of Technology, Austria, C.J. POWELL, National 

Institute of Standards and Technology 

9:20 am Invited talk continued. AS-MoM4 XPS Characterisation of InP Features Etched in Cl2-Ar and Cl2- 

H2 Inductively Coupled Plasmas, C. CARDINAUD, CNRS, France, R. CHANSON, 

CNRS-IMN, France, S. BOUCHOULE, CNRS-LPN, France, A. RHALLABI, M.-C. 

FERNANDEZ, Université de Nantes, France 


Synchrotron Radiation Studies of Actinide Compounds, S.M. BUTORIN, 

Uppsala University, Sweden 

AS-MoM5 Simplified Extrinsic Background for XPS Data Fitting, A. 

HERRERA-GOMEZ, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico 

10:00 am Invited talk continued. AS-MoM6 Effective Attenuation Lengths for Photoelectrons in Thin Films 

of Silicon Oxynitride and Hafnium Oxynitride on Silicon, C.J. POWELL, 

National Institute of Standards and Technology, W.S.M. WERNER, W. SMEKAL, G. 

TASNEEM, Vienna University of Technology, Austria 

10:20 am BREAK BREAK 

10:40 am AC+MI+SS+TF-MoM8 Quasiparticle Dynamics in Uranium Systems from 

Ultrafast Spectroscopies, T. DURAKIEWICZ, Los Alamos National Laboratory 

11:00 am AC+MI+SS+TF-MoM9 Comparison of Spectroscopic Data with Cluster 

Calculations of Plutonium, Plutonium Dioxide and Uranium Dioxide, J.G. 

TOBIN, S.W. YU, B.W. CHUNG, Lawrence Livermore National Laboratory, M.V. RYZHKOV, 

Russian Academy of Science-Ekaterinburg, A. MIRMELSTEIN, Russian Federation Nuclear 

Center-Snezhinsk 

AS-MoM8 Invited 

Valence Band XPS: A Valuable, but Underexploited, Tool for the 

Identification of Subtle Differences in Surface Chemistry, P.M.A. 

SHERWOOD, Oklahoma State University 

Invited talk continued. 

11:20 am AS-MoM10 Multitechnique Electron Spectroscopic Characterisation of 

Optoelectronic Devices, A.E. WRIGHT, P. MACK, R.G. WHITE, A. BUSHELL, Thermo 

Fisher Scientific, UK 

11:40 am AS-MoM11 Chemically Resolved Electrical Characterisation of Working 

Devices by XPS, S. SUZER, Bilkent University, Turkey 

* Albert Nerken Award Winner 

Monday Morning, October 29, 2012 

82


Room: 23 - Session BI-MoM 


Surfaces to Control Cell Response 

Moderator: A. Rosenhahn, Karlsruhe Institute of Technology, Germany 

8:20 am BI-MoM1 Click Chemistry on Brominated Plasma Polymer Thin Films for 

Immobilizing and Patterning Biomolecules and Cells, B.W. MUIR, CSIRO 

Materials Science and Engineering, Australia, R. CHEN, CSIRO Materials Science and 

Engineering and The University of Melbourne, Australia, G.K. SUCH, The University of 

Melbourne, Australia, A. POSTMA, R.A. EVANS, K.M. MCLEAN, CSIRO Materials Science 

and Engineering, Australia, F. CARUSO, The University of Melbourne, Australia 

8:40 am BI-MoM2 Temperature-Induced Electrostatic Assembly of Poly (Ethylene 

Glycol) Co-Polymer for Non-Fouling Biomedical Applications: How Low 

Can You Go?, R. OGAKI, O. ZOFFMANN ANDERSEN, K. KOLIND, D.C.E. KRAFT, M. 

FOSS, Aarhus University, Denmark 

9:00 am BI-MoM3 Invited 

Spatially and Temporally Coordinated Processes of Cells at Molecular to 

Cellular Scales, J.P. SPATZ, Max Planck Institute for Intelligent Systems & University of 

Heidelberg, Germany 


Room: 19 - Session EL+TF+AS+EM+SS+PS+EN+NM-MoM 

Spectroscopic Ellipsometry for Photovoltaics and 

Semiconductor Manufacturing 

Moderators: M. Creatore, Eindhoven University of Technology, the 

Netherlands, H. Wormeester, MESA+ Institute for Nanotechnology, 

Univeristy of Twente, The Netherlands 

EL+TF+AS+EM+SS+PS+EN+NM-MoM1 Invited 

Multichannel Spectroscopic Ellipsometry: Applications in I-III-VI2 Thin 

Film Photovoltaics, R.W. COLLINS, D. ATTYGALLE, P. ARYAL, P. PRADHAN, N.J. 

PODRAZA, University of Toledo, V. RANJAN, S. MARSILLAC, Old Dominion University 


EL+TF+AS+EM+SS+PS+EN+NM-MoM3 Contribution of Plasma Generated 

Nanoparticles to the Growth of Microcrystalline Silicon Deposited from 

SiF4/H2/Argon Gas Mixtures, J.-C. DORNSTETTER, S. KASOUIT, J.-F. BESNIER, 

Total S.a, France, P. ROCA I CABARROCAS, LPICM-CNRS, Ecole Polytechnique, France 

9:20 am Invited talk continued. EL+TF+AS+EM+SS+PS+EN+NM-MoM4 Multichannel Spectroscopic 

Ellipsometry for CdTe Photovoltaics: from Materials and Interfaces to 

Full-Scale Modules, P. KOIRALA, J. CHEN, X. TAN, N.J. PODRAZA, The University of 

Toledo, S. MARSILLAC, Old Dominion University, R.W. COLLINS, The University of Toledo 

9:40 am BI-MoM5 Chemically Defined Synthetic Surfaces for Mesenchymal Stem 

Cell Expansion, L. MEAGHER, H. THISSEN, P. PASIC, R.A. EVANS, S. PEREIRA, K. 

TSANG, V. GLATTAUER, K. STYAN, C.L. BE, D. HAYLOCK, CSIRO Materials Science and 

Engineering, Australia 

EL+TF+AS+EM+SS+PS+EN+NM-MoM5 Determination of Electronic Band Gaps 

from Optical Spectra, R.A. SYNOWICKI, J.A. Woollam Co., Inc. 

10:00 am BI-MoM6 Binary Colloidal Crystal Structures Combined with Chemical EL+TF+AS+EM+SS+PS+EN+NM-MoM6 Optical Modeling of Plasma-Deposited 

Surface Modification to Achieve Superior Control Over Biointerfacial ZnO: Extended Drude and its Physical Interpretation, H.C.M. KNOOPS, M.V. 

Interactions, P. KOEGLER, Swinburne Univ. of Tech., Australia, P. PASIC, J. 

PONOMAREV, J.W. WEBER, N. LEICK, B.W.H. VAN DE LOO, Y.G. MELESE, W.M.M. 

GARDINER, V. GLATTAUER, CSIRO Materials Science and Eng., Australia, A. CLAYTON, 

Swinburne Univ. of Tech., Australia, H. THISSEN, CSIRO Materials Science and Eng., 

Australia, P. KINGSHOTT, Swinburne Univ. of Tech., Australia 

KESSELS, M. CREATORE, Eindhoven University of Technology, the Netherlands 


10:40 am BI-MoM8 Invited 

Capturing Cell-Cell Communication on Micro-/Nano-Engineered 

Surfaces, L.C. KAM, Columbia University 

EL+TF+AS+EM+SS+PS+EN+NM-MoM8 The Ellipsometric Response of Single- 

Crystal Silicon to Doping, H.G. TOMPKINS, Consultant 

11:00 am Invited talk continued. EL+TF+AS+EM+SS+PS+EN+NM-MoM9 The Effect of Stress on the Optical 

Properties Semiconductor Films, A.C. DIEBOLD, G.R. MUTHINTI, M. 

MEDIKONDA, T.N. ADAM, College of Nanoscale Science and Engineering, University at 

Albany, A. REZNICEK, B. DORIS, IBM Research at Albany Nanotech 

11:20 am BI-MoM10 Influence of Ca 2+ Binding to Titania on Platelet Activation 

Profiles, S. GUPTA, I. REVIAKINE, CIC biomaGUNE, Spain 

11:40 am BI-MoM11 Enhancing the Osseointegration of Titanium Dental Implants by 

Magnetron-Sputtered Strontium Containing Coatings, O.Z. ANDERSEN, 

Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark, V. 

OFFERMANNS, Medizinische Universität Innsbruck, Universitätsklinik für Mund-, Kiefer- und 

Gesichtschirurgie, Austria, M. SILLASSEN, Interdisciplinary Nanoscience Center (iNANO), 

Aarhus University, Denmark, D.C.E. KRAFT, Aarhus School of Dentistry, Denmark, J. 

BØTTIGER, F. BESENBACHER, Interdisciplinary Nanoscience Center (iNANO), Aarhus 

University, Denmark, F. KLOSS, Medizinische Universität Innsbruck, Universitätsklinik für 

Mund-, Kiefer- und Gesichtschirurgie, Austria, M. FOSS, Interdisciplinary Nanoscience 

Center (iNANO), Aarhus University, Denmark 

83 

EL+TF+AS+EM+SS+PS+EN+NM-MoM10 Numerical Ellipsometry: Spectroscopic 

n-k Plane Analysis of Thin Films Growing on Unknown Layered 

Substrates, F.K. URBAN, D. BARTON, Florida International University


Room: 9 - Session EM+TF+OX+GR-MoM 


High-k Dielectrics for MOSFETs I 

Moderator: A.C. Kummel, University of California San Diego 

8:20 am EM+TF+OX+GR-MoM1 Invited 

Surface Preparation and Dielectric Growth for Graphene-based Devices, 

R.M. WALLACE, University of Texas at Dallas 


Room: 15 - Session EN+NS-MoM 

Nanostructured Solar Cells 

Moderator: M.S. Arnold, University of Wisconsin Madison 

EN+NS-MoM1 Doping Control for the Development of Silicon Quantum Dot 

Solar Cell, K.J. KIM, J.H. PARK, Korea Research Institute of Standards and Science 

(KRISS), Republic of Korea, H.-J. BAEK, H.H. HWANG, University of Science and 

Technology (UST), Republic of Korea, J.S. JANG, Chungbuk National University (CBNU), 

Republic of Korea 

8:40 am Invited talk continued. EN+NS-MoM2 Photocarrier Generation in Si Quantum-dot Sensitized Solar 

Cells, G. UCHIDA, H. SEO, Y. WANG, K. KAMATAKI, N. ITAGAKI, K. KOGA, M. 

SHIRATANI, Kyushu University, Japan 


Antimonide-Based P-Channel MOSFET: Progress and Challenges, S. 

OKTYABRSKY, A. GREENE, S. MADISETTI, P. NAGAIAH, M. YAKIMOV, R. MOORE, S. 

NOVAK, H. BAKHRU, V. TOKRANOV, University at Albany-SUNY 


9:40 am EM+TF+OX+GR-MoM5 Interface Study of the Atomic Layer Deposited Al2O3 

on Al0.25Ga0.75N, X. QIN, B. BRENNAN, H. DONG, R.M. WALLACE, The University of 

Texas at Dallas 

10:00 am EM+TF+OX+GR-MoM6 Ideal Monolayer Nitridation of Semiconductors using 

a Nitrogen Radical Generator, A.T. LUCERO, J. KIM, University of Texas at Dallas 


10:40 am EM+TF+OX+GR-MoM8 The Chemical Reaction of TiO2 Thin Film in 

N2/CF4/Ar Plasmas, K.R. CHOI, J.C. WOO, Y.H. JOO, L. CHEN, H.S. KIM, Y.S. CHUN, 

C.I. KIM, Chung-Ang University, Republic of Korea 

11:00 am EM+TF+OX+GR-MoM9 Characterization of ALD Laminated Gate Dielectrics 

on GaN MOSCAPs, D. WEI, T. HOSSAIN, Kansas State University, N. NEPAL, N.Y. 

GARCES, Naval Research Laboratory, H.M. MEYER III, Oak Ridge National Laboratory, 

C.R. EDDY, JR., Naval Research Laboratory, J.H. EDGAR, Kansas State University 


Passivation of Interfacial Defects in GaAs and Other III-Vs, J. ROBERTSON, 

Cambridge University, UK 

EN+NS-MoM3 Invited 

Quantum Dot Solar Cells with External Quantum Efficiency Exceeding 

100% by Multiple Exciton Generation, J.M. LUTHER, M.C. BEARD, A.J. NOZIK, 

O.E. SEMONIN, National Renewable Energy Laboratory 

EN+NS-MoM5 Quantum-Confined Nanocrystals as Building Blocks for 

Low-Cost Solution-Processed Multi-Junction Solar Cells, T. HANRATH, J.W. 

CHOI, W.N. WENGER, R.S. HOFFMAN, Cornell University 

EN+NS-MoM6 Improvement of Carrier Transport in PbSe Quantum Dot- 

Embedded Polymeric Solar Cells Fabricated by a Laser Assisted Spray 

Process, C. HETTIARACHCHI, D.M. FELICIANO, D. MUKHERJEE, P. MUKHERJEE, S. 

WITANACHCHI, University of South Florida 

EN+NS-MoM8 Invited 

Single and Multiple Exciton Dissociation in Colloidal 

Nanoheterostructures, T. LIAN, Emory University 


EN+NS-MoM10 Temperature Dependent Characterization of InAs Quantum 

Dots Imbedded in GaAs Superlattice Solar Cell Structures by High 

Resolution X-ray Diffraction, J. SHENG, University of New Mexico, D. CHAPMAN, D. 

WILT, Air Force Research Laboratory, S. POLLY, C. BAILEY, C. KERESTES, S. HUBBARD, 

Rochester Institute of Technology, S.M. HAN, University of New Mexico 

11:40 am Invited talk continued. EN+NS-MoM11 Intermediate Band Upconversion for Low-Cost, Solution 

Processed Photovoltaics, J. LEWIS, E.J.D. KLEM, C.W. GREGORY, G.B. 

CUNNINGHAM, S. HALL, D.S. TEMPLE, RTI International 

84


Room: 13 - Session GR+EM+NS+PS+SS+TF-MoM 

Graphene Growth 

Moderators: M. Spencer, Cornell University, 

V.D. Wheeler, U.S. Naval Research Laboratory 


8:20 am GR+EM+NS+PS+SS+TF-MoM1 Synthesis Ingredients Enabling Low Noise 

Epitaxial Graphene Applications, D.K. GASKILL, L.O. NYAKITI, V.D. WHEELER, 

U.S. Naval Research Lab, A. NATH, George Mason Univ., V.K. NAGAREDDY, Newcastle 

University, UK, R.L. MYERS-WARD, N.Y. GARCES, S.C. HERNÁNDEZ, S.G. WALTON, 

U.S. Naval Research Lab, M.V. RAO, George Mason Univ., A.B. HORSFALL, Newcastle 

Univ., UK, C.R. EDDY, JR., U.S. Naval Research Lab, J.S. MOON, HRL Labs LLC 

8:40 am GR+EM+NS+PS+SS+TF-MoM2 Growth of Graphene by Catalytic 

Decomposition of Ethylene on Cu(100) and Cu(111) With and Without 

Oxygen Predosing, Z.R. ROBINSON, P. TYAGI, T. MOWLL, C.A. VENTRICE, JR., 

University at Albany- SUNY, K. CLARK, A.-P. LI, Oak Ridge National Laboratory 

9:00 am GR+EM+NS+PS+SS+TF-MoM3 Impact of Growth Parameters on Uniformity of 

Epitaxial Graphene, L.O. NYAKITI, V.D. WHEELER, R.L. MYERS-WARD, J.C. 

CULBERTSON, U.S. Naval Research Laboratory, A. NATH, George Mason University, N.Y. 

GARCES, U.S. Naval Research Laboratory, J. HOWE, Oak Ridge National Laboratory, C.R. 

EDDY, JR., D.K. GASKILL, U.S. Naval Research Laboratory 

9:20 am GR+EM+NS+PS+SS+TF-MoM4 Uniform Epitaxial Growth of Charge Neutral 

Quasi-Free-Standing Monolayer Graphene on a 6H-SiC(0001) Surface 

by Combination of Metal Silicidation and Intercalation, H. SHIN, I. SONG, C.- 

Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea 

9:40 am GR+EM+NS+PS+SS+TF-MoM5 Invited 

Epitaxial Graphene on Ir(111) - A Playground for the Fabrication of 

Graphene Hybrid Materials, T.W. MICHELY, Universität zu Köln, Germany 

MEMS and NEMS 

Room: 10 - Session MN+AS-MoM 

Characterization of Surfaces and Interfaces in MEMS and 

NEMS 

Moderator: A.V. Sumant, Argonne National Laboratory 

MN+AS-MoM1 Invited 

Probing Dynamical Surface and Interfacial Effects in High-Speed 

Nanoelectromechanical Systems (NEMS), X.-L. FENG, Case Western Reserve 

University 


MN+AS-MoM3 Fabrication of Nanomechanical Switch Based on 

Ultrananocrystalline Diamond Nanowire, A.V. SUMANT, Argonne National 

Laboratory, K.J. PÉREZ QUINTERO, University of Puerto Rico, D.A. CZAPLEWSKI, Argonne 

National Laboratory 

MN+AS-MoM4 Carbon Nanotube Templated MEMS: Three Dimensional 

Microstructures in Semiconductors, Ceramics, and Metals, R.C. DAVIS, L. 

BARRETT, R. HANSEN, A. KONNEKER, D.D. ALLRED, B.D. JENSEN, R. VANFLEET, 

Brigham Young University 

MN+AS-MoM5 Filling through Silicon vias with a Carbon Nanotube/Copper 

Matrix, M.B. JORDAN, M. RAO, The University of Alabama, A.V. SUMANT, R.S. DIVAN, 

Argonne National Laboratory, S.L. BURKETT, The University of Alabama 

10:00 am Invited talk continued. MN+AS-MoM6 Optimization of STiGer Process used to Etch High Aspect 

Ratio Silicon Microstructures, T. TILLOCHER, P. LEFAUCHEUX, GREMI 

CNRS/Université d'Orléans, France, J. LADROUE, M. BOUFNICHEL, ST Microelectronics, 

Tours, France, P. RANSON, R. DUSSART, GREMI CNRS/Université d'Orléans, France 


10:40 am GR+EM+NS+PS+SS+TF-MoM8 Invited 

Graphene Growth Studied with LEEM, PEEM, EELS, ARPES, MEIS, 

and STM, R.M. TROMP, J.B. HANNON, M.W. COPEL, S.-H. JI, F.M. ROSS, IBM T.J. 

Watson Research Center 

MN+AS-MoM8 Mechanical Analysis on the Plasma Induced Deformation in 

Line Patterns Based on Real Profile Images, S.-W. PARK, K.-H. BAEK, 

Samsung Electronics Co. Ltd., Republic of Korea, J.-B. MOON, Korea Institute of Machinery 

and Materials, Republic of Korea, S.-H. CHOI, J.-S. HONG, Lam Research Corp, K.-S. SHIN, 

Y.-G. SHIN, H.-G. KANG, Samsung Electronics Co. Ltd., Republic of Korea 

11:00 am Invited talk continued. MN+AS-MoM9 The Effect of Back-action Force for the Electron Tunneling 

Transduction in MEMS Measurement, M.R. KAN, University of Alberta, Canada, Z. 

DIAO, National Institute for Nanotechnology, NRC Canada, V.T.K. SAUER, M.R. FREEMAN, 

University of Alberta, Canada, W.K. HIEBERT, National Institute for Nanotechnology, NRC 

Canada 

11:20 am GR+EM+NS+PS+SS+TF-MoM10 Spatial Confinement of Epitaxy of Graphene 

on Microfabricated SiC to Suppress Thickness Variation, H. FUKIDOME, T. 

IDE, H. HANDA, RIEC, Tohoku Univ., Japan, Y. KAWAI, Tohoku Univ., Japan, F. FROMM, 

Univ. Erlange-Nürnberg, Germany, M. KOTSUGI, T. OHKOUCHI, JASRI/SPring-8, Japan, H. 

MIYASHITA, Tohoku Univ., Japan, Y. ENTA, Hirosaki Univ., Japan, T. KINOSHITA, 

JASRI/SPring-8, Japan, TH. SEYLLER, Univ. Erlange-Nürnberg, Germany, M. SUEMITSU, 

RIEC, Tohoku Univ., Japan 

11:40 am GR+EM+NS+PS+SS+TF-MoM11 Three-Dimensional Graphene Architecture 

Growth and Its Facile Transfer to Three-Dimensional Substrates, J.-H. 

PARK, Sungkyunkwan University, Republic of Korea, H.-J. SHIN, J.Y. CHOI, Samsung 

Advanced Institute of Technology, Republic of Korea, J.R. AHN, Sungkyunkwan University, 


85 

MN+AS-MoM10 Electric-Stimulus-Responsive Pluronic Hydrogels as 

Actuators, L. ENGEL, I. SOKOLOV, O. BERKH, Tel Aviv University, Israel, K. 

ADESANYA, E. VANDERLEYDEN, P. DUBRUEL, Ghent University, Belgium, J. 

SHKLOVSKY, I. HARARI, Y. SHACHAM-DIAMAND, S. KRYLOV, Tel Aviv University, Israel 

MN+AS-MoM11 CMOS MEMS Metal-based Tactile Sensors Development, 

Y.C. LIN, C.J. HSIEH, L.B. WANG, J.C. LIOU, W.-C. TIAN, National Taiwan University, 

Taiwan, Republic of China


Room: 16 - Session NM+AS+MS-MoM 

Metrology and Environmental Issues in Nanomanufacturing 

Moderators: N.A. Burnham, Worcester Polytechnic Institute, 

L.J. Gamble, University of Washington 


8:20 am NM+AS+MS-MoM1 Invited 

Nanomanufacturing – Beyond Silicon, J.A. LIDDLE, National Institute of Standards 

and Technology 

Nanometer-scale Science and Technology 

Room: 12 - Session NS-MoM 

Nanoparticles and Quantum Structures 

Moderator: G.S. Herman, Oregon State University 

8:40 am Invited talk continued. NS-MoM2 Synthesis of Visible Light Emitting Self-assembled Ge 

Nanocrystals Embedded within a SiO2 Matrix and Post-annealing 

Effects, A. HERNÁNDEZ-HERNÁNDEZ, F. DE MOURE-FLORES, J.G. QUIÑONES- 

GALVÁN, CINVESTAV-IPN, Mexico, L.A. HERNÁNDEZ-HERNÁNDEZ, ESFM-IPN, Mexico, 

J. SANTOYO-SALAZAR, M. MELÉNDEZ-LIRA, CINVESTAV-IPN, Mexico 

9:00 am NM+AS+MS-MoM3 Use of Mueller Matrix – Spectroscopic Ellipsometry for 

Scatterometry based Measurement of Critical Dimensions during 

Semiconductor Manufacturing, G.R. MUTHINTI, A.C. DIEBOLD, University at 

Albany-SUNY, B. PETERSON, Nanometrics Inc. 

9:20 am NM+AS+MS-MoM4 Atomic Layer Deposition Monitored and Characterized 

by Joint In Situ Real-Time Spectroscopic Ellipsometry and Direct 

Surface Analysis, M. JUNIGE, M. GEIDEL, M. KNAUT, M. ALBERT, J.W. BARTHA, 

Technische Universität Dresden, Germany 


Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Nanoparticles, 

J. SIMMONS, J. LIU, Duke University, W. BAUGHMAN, University of Alabama, J. 

FOREMAN, H.O. EVERITT, U.S. Army Aviation and Missile Research Development and 

Engineering Center 

NS-MoM3 Invited 

A Single Atom Transistor, M.Y. SIMMONS, University of New South Wales, Australia 


NS-MoM5 Transforming Luminiscent Silicon Nanocrystals Into a Direct- 

Bandgap Semiconductor via Surface-Capping-Induced Strain, P. HAPALA, 

P. JELINEK, K. KUSOVA, I. PELANT, Institute of Physics of ASCR, Czech Republic 

10:00 am Invited talk continued. NS-MoM6 Plasma Synthesis and Hydrosilylation of Silicon Nanoparticles, 

S.L. WEEKS, S. AGARWAL, Colorado School of Mines, B. MACCO, Eindhoven University of 

Technology, the Netherlands 



Transformation of Engineered Nanomaterials in the Environment: Effects 

of Size, Shape and Morphology on Nanomaterial Toxicity, S. OBARE, 

Western Michigan University 

NS-MoM8 Exchange Bias in Pure and Core/Shell Structured γ-Fe2O3based 

Nanoparticles, P. LAMPEN, H. KHURSHID, M.H. PHAN, H. SRIKANTH, 

University of South Florida 

11:00 am Invited talk continued. NS-MoM9 Magnetic Polymer Nanocomposites with Tunable Microwave 

and RF Properties, K. STOJAK, S. CHANDRA, H. KHURSHID, S. PAL, C. MORALES, 

J. DEWDNEY, J. WANG, T. WELLER, M.H. PHAN, H. SRIKANTH, University of South 

Florida 


An Integrated Approach Toward Understanding the Environmental Fate, 

Transport, Toxicity and Occupational Health Hazards of Nanomaterials, 

V. GRASSIAN, University of Iowa 

NS-MoM10 Factors Controlling Thermodynamic Properties at the 

Nanoscale: Ab Initio Study of Pt Nanoparticles, G. SHAFAI, M. ALCANTARA 

ORTIGOZA, T.S. RAHMAN, University of Central Florida 

11:40 am Invited talk continued. NS-MoM11 Fabrication of Fe Doped Nano-engineered Matrix for 

Cholesterol Biosensor, R.R. PANDEY, C. KANT, CSIR-National Physical Laboratory, 

National Physical Laboratory, India, M. DHAYAL, CSIR Centre for Cellular and Molecular 

Biology (CCMB), India, K.K. SAINI, CSIR-National Physical Laboratory, National Physical 

Laboratory, India 

86

Oxide Heterostructures-Interface Form & Function Focus 

Topic 

Room: 7 - Session OX+EM+MI+NS+TF-MoM 

Structure–Property Relationships in Epitaxial Oxide 

Interfaces 

Moderator: E.I. Altman, Yale University 


8:20 am OX+EM+MI+NS+TF-MoM1 Role of Dual-laser Ablation in Controlling Mn 

Oxide Precipitation during the Epitaxial Growth of Mn Doped ZnO Thin 

Films with Higher Doping Concentrations, D. MUKHERJEE, M. HORDAGODA, 

R.H. HYDE, N. BINGHAM, H. SRIKANTH, P. MUKHERJEE, S. WITANACHCHI, University of 

South Florida 

8:40 am OX+EM+MI+NS+TF-MoM2 Structural Characterization of Heterojunction n- 

ZnO/p-NiO Thin Films Epitaxially Deposited on (0002)Al2O3 Substrates, 

Y.H. KWON, Sungkyunkwan University, Republic of Korea, J.H. LEE, KAIST, Republic of 

Korea, S.H. CHUN, Sungkyunkwan University, Republic of Korea, J.Y. LEE, KAIST, Republic 

of Korea, H.K. CHO, Sungkyunkwan University, Republic of Korea 

9:00 am OX+EM+MI+NS+TF-MoM3 Invited 

Manipulating the Electrostatic Boundary Conditions of Polar Interfaces, Y. 

HIKITA, SLAC National Accelerator Laboratory 


Room: 24 - Session PS+EM-MoM 

Atmospheric Plasma Processing and Micro Plasmas 

Moderator: S.G. Walton, Naval Research Laboratory 

PS+EM-MoM1 Invited 

Plasma Science and Applications in the Spatial Realm Below 1 mm: 

Recent Advances in Microcavity/Microchannel Plasmas, J.G. EDEN, 

University of Illinois at Urbana Champaign 


PS+EM-MoM3 Development and Limitations of Microplasma Arrays on 

Silicon Operating in DC, R. DUSSART, M. KULSRESHATH, L. SCHWAEDERLE, V. 

FELIX, P. LEFAUCHEUX, O. AUBRY, T. TILLOCHER, S. SOZIAS, GREMI - Polytech 

Orleans/CNRS, France, L.J. OVERZET, University of Texas at Dallas 

9:20 am Invited talk continued. PS+EM-MoM4 A Foldable Microplasma-Generation Device on a Paper 

Substrate Operating under Atmospheric Pressure, Y.J. YANG, J.H. TSAI, Y.C. 

LIAO, Y.W. LU, C.C. HSU, National Taiwan University, Taiwan, Republic of China 


Nanoscale Coupling Across Oxide-Semiconductor Interfaces: Ab Initio 

Insights, S. ISMAIL-BEIGI, Yale University 




Spectroscopic Imaging of Oxide Interfaces by Aberration Corrected 

Electron Microscopy, L.F. KOURKOUTIS, D.A. MULLER, Cornell University 

PS+EM-MoM5 Invited 

Cold Atmospheric Microplasma Arrays for Processing of Flexible 

Materials, J. HOPWOOD, A. HOSKINSON, C. WU, N. MIURA, Tufts University 

PS+EM-MoM8 Nucleation of Nanodiamond Clusters at Ambient Pressure 

via Microplasma Synthesis, A. KUMAR, P.A. LIN, A. XUE, R.M. SANKARAN, Case 

Western Reserve University 

11:00 am Invited talk continued. PS+EM-MoM9 Atmospheric Pressure Plasma Effects on the Adhesive 

Bonding Properties of Stainless Steel and Epoxy Composites, T.S. 

WILLIAMS, H. YU, P. YEH, J. YANG, R.F. HICKS, University of California, Los Angeles 

11:20 am OX+EM+MI+NS+TF-MoM10 Strain-induced Oxygen Vacancy Ordering at 

SrTiO3/La0.5Sr0.5CoO3 Interfaces, and its Impact on Magnetic “Dead” 

Layers, S. BOSE, M. SHARMA, M. TORIJA, University of Minnesota, J. GAZQUEZ, M. 

VARELA, Oak Ridge National Laboratory, J. SCHMITT, C. HE, University of Minnesota, S. 

EL-KHATIB, American University of Sharjah, United Arab Emirates, M. LAVER, J. 

BORCHERS, NIST Center for Neutron Research, C. LEIGHTON, University of Minnesota 

11:40 am OX+EM+MI+NS+TF-MoM11 Fabrication and Characterization of Titanium 

Oxide Films with Tunable Stiffness, K. GOTLIB-VAINSHTEIN, O. GIRSHEVITZ, 

C.N. SUKENIK, Bar Ilan University, Israel, D. BARLAM, Ben Gurion University, Israel, E. 

KALFON-COHEN, S.R. COHEN, Weizmann Institute of Science, Israel 

87 

PS+EM-MoM10 Numerical Simulation of Gas Heating in a Capacitively 

Coupled Microcell Plasma at Atmospheric Pressure, T. YAGISAWA, T. 

MAKABE, Keio University, Japan 

PS+EM-MoM11 Reactions at the Interface of Plasmas and Aqueous 

Electrodes: Identifying the Role of Electrons, M. WITZKE, Case Western 

Reserve University, P. RUMBACH, D.B. GO, University of Notre Dame, R.M. SANKARAN, 

Case Western Reserve University


Room: 25 - Session PS-MoM 


Advanced FEOL/Gate Etching 1 

Moderator: L. Diao, Mattson Technology 

8:20 am PS-MoM1 Selective Etching of Spacer with Pulsing in Inductively Coupled 

Plasmas for FinFET Devices, B. ZHOU, M. TITUS, P. FRIDDLE, M. ROBSON, G. 

UPADHYAYA, G. KAMARTHY, Lam Research Corp, S. KANAKASABAPATHY, E. FRANKE, 

IBM Corp 

8:40 am PS-MoM2 Evaluation of Novel Spacer Etch Processes using a New Gas, 

S. ENGELMANN, E.A. JOSEPH, N.C.M. FULLER, W.S. GRAHAM, E.M. SIKORSKI, IBM 

T.J. Watson Research Center, M. NAKAMURA, G. MATSUURA, Zeon Chemicals L.P., H. 

MATSUMOTO, A. ITOU, T. SUZUKI, Zeon Corporation 

9:00 am PS-MoM3 Invited 

Anisotropic and Selective Etching of Novel Multifunctional Materials, J.P. 

CHANG, University of California, Los Angeles 


9:40 am PS-MoM5 High Selective Etching of SiN Based Material Over Si and SiO2 

using Evanescent Microwave Plasma for FINFET Spacer Applications, A. 

RALEY, A. RANJAN, H. KINTAKA, B. MESSER, T. MORI, K. KUMAR, P. BIOLSI, Tokyo 

Electron Technology Center, America, LLC, A. INADA, Renesas Electronics, R. JUNG, S. 

KANAKASABAPATHY, International Business Machines – Research Group 

10:00 am PS-MoM6 Highly Selective and Controllable Si3N4 Etching to Si and SiO2 

for sub-22-nm Gate Spacer using CF3 Neutral Beam with O2 and H2, D. 

NAKAYAMA, A. WADA, T. KUBOTA, Tohoku University, Japan, M. HAASS, R.L. BRUCE, 

R.M. MARTIN, N.C.M. FULLER, IBM TJ Watson Research Center, S. SAMUKAWA, Tohoku 

University, Japan 


10:40 am PS-MoM8 Highly Selective Etching of Titanium Nitride Over Tantalum 

Nitride in Inductively Coupled Plasma, W. ZHU, H. SHIN, S. SRIDHAR, L. LIU, 

V.M. DONNELLY, D.J. ECONOMOU, University of Houston, C. LENOX, T. LII, Texas 

Instruments 

11:00 am PS-MoM9 Pulsed Plasmas for SiN Etch Applications, R. DASAKA, IBM 

Semiconductor R&D Center, G. PADRON-WELLS, GLOBALFOUNDRIES, D. KIM, Lam 

Research, K. ONISHI, IBM Semiconductor R&D Center, M. ROBSON, A. CHARLES, G. 

UPADHYAYA, Lam Research, R. WISE, W. KOCON, IBM Semiconductor R&D Center 

11:20 am PS-MoM10 Etching High-k Films in High Aspect Ratio Gate Structures 

using BCl3/Ar and Cl2/CO Chemistries, S. AGARWAL, J. CHOI, A. KHAN, Applied 

Materials, Inc. 

11:40 am PS-MoM11 Time-modulated Plasma Etching for Next Generation Devices, 

S. SRIRAMAN, Y. WU, G. KAMARTHY, C. RUSU, J. HOLLAND, A. PATERSON, V. 

VAHEDI, Lam Research 

88 


Room: 22 - Session SE+NS-MoM 

Nanostructured Thin Films and Coatings I: Interface Aspects 

Moderator: J. Patscheider, EMPA, Switzerland 

SE+NS-MoM2 Ion-guided Phase Separation of Carbon-Nickel Composite 

Films during Ion Beam Assisted Deposition: 3D Sculpting at the 

Nanoscale, G. ABRASONIS, Helmholtz-Zentrum Dresden-Rossendorf, Germany, M. 

KRAUSE, Helmholtz-Zentrum Dresden-Rossendorf and Technische Universität Dresden, 

Germany, T.W.H. OATES, Leibniz-Institut für Analytische Wissenschaft, Germany, A. 

MÜCKLICH, S. FACSKO, Helmholtz-Zentrum Dresden-Rossendorf, Germany, C. BAEHTZ, 

A. SHALIMOV, Helmholtz-Zentrum Dresden-Rossendorf, Germany and European 

Synchrotron Radiation Facility, France, S. GEMMING, Helmholtz-Zentrum Dresden- 

Rossendorf, Germany 

SE+NS-MoM3 Invited 

Interface Phenomena in Nanostructured Thin Films and Coatings, D. 

RAFAJA, Freiberg University of Technology, Germany 

SE+NS-MoM5 Mechanical Properties, Fracture Toughness, and Thermal 

Stability of CrN/AlN Superlattice and Multilayer Thin Films, M. SCHLÖGL, B. 

MAYER, J. PAULITSCH, J. KECKES, C. KIRCHLECHNER, P.H. MAYRHOFER, 

Montanuniversität Leoben, Austria 

SE+NS-MoM6 High-temperature Nanoindentation of Hard Coatings, M. 

REBELO DE FIGUEIREDO, University of California Berkeley, M. TKADLETZ, Materials 

Center Leoben, Austria, M. SCHLÖGL, R. HOLLERWEGER, P.H. MAYRHOFER, C. 

MITTERER, Montanuniversität Leoben, Austria, P. HOSEMANN, University of California 

Berkeley 

SE+NS-MoM8 Improving the Phase Stability of Metastable Aluminum 

Oxide Thin Films, F. NAHIF, H. BOLVARDI, D. MUSIC, S. MRÁZ, J.M. SCHNEIDER, 

RWTH Aachen University, Germany 

SE+NS-MoM9 Thermal Stability of (AlxCr1-x)2O3 Solid Solution Coatings 

Grown by Cathodic Arc Evaporation, V. EDLMAYR, M. POHLER, University of 

Leoben, Austria, I. LETOFSKY-PAPST, Graz University of Technology, Austria, C. 

MITTERER, University of Leoben, Austria 

SE+NS-MoM10 Protective Coatings Against Corrosion and Wear for 3D 

Components with Combined ALD and PVD Techniques, S. EK, Picosun, 

Finland


Room: 21 - Session SS-MoM 

Nonequillibrium and Nonlinear Processes 

Moderators: D. Diesing, University of Duisburg-Essen, Germany, 

E. Karpov, University of Illinois at Chicago 


8:20 am SS-MoM1 Hot Electron Flow Generated by Photon Absorption Probed 

with Metal-Semiconductor Nanodiodes, J.Y. PARK, Y.K. LEE, KAIST, Republic of 

Korea 

8:40 am SS-MoM2 The Nature of Charge Transfer at Metal-Liquid Interface: 

Equilibrium vs. Non Equilibrium Processes, D. BÜRSTEL, M. SCHEELE, I. 

NEDRYGAILOV, D. DIESING, University of Duisburg-Essen, Germany 

9:00 am SS-MoM3 Probing Surface Chemical Reactions with Metal Nanofilm - 

Semiconductor Schottky Diodes, I. NEDRYGAILOV, E. HASSELBRINK, D. 

DIESING, University of Duisburg-Essen, Germany 

9:20 am SS-MoM4 Non-adiabatic Electronic Effects in Multiquanta Energy Transfer 

and Reactions at Metal Surfaces: Do We Need to Go Beyond the 

Electronic Friction Picture?, D.J. AUERBACH, University of California, Santa Barbara, K. 

GOLIBRZUCH, University of Göttingen, Germany, A. KANDRATSENKA, Max Planck Institute for 

Biophysical Chemistry, Germany, R. COOPER, C. BARTELS, University of Göttingen, Germany, 

I. RAHINOV, The Open University of Israel, A.M. WODTKE, University of Göttingen, Germany 

9:40 am SS-MoM5 Invited 

Experimental Evidence of Non-adiabatic Effects in Gas-Surface 

Interactions, H. NIENHAUS, University of Duisburg-Essen, Germany 

Thin Film 

Room: 11 - Session TF-MoM 



10:40 am SS-MoM8 Invited 

Nonadiabatic Dynamics of Open-Shell Molecules at Surfaces, J.C. TULLY, 

Yale University 

ALD Enabled Applications 

Moderator: W.M.M. Kessels, Eindhoven University of Technology, the 

Netherlands 

TF-MoM3 Atomic Layer Deposition Films as Diffusion Barriers for Silver 

Artifacts, A.E. MARQUARDT, University of Maryland, E. BREITUNG, E-Squared Art 

Conservation Science, G. GATES, T. DRAYMAN-WEISSER, The Walters Art Museum, G.W. 

RUBLOFF, R.J. PHANEUF, University of Maryland 

TF-MoM4 Quasi-ALD for Deposition of a Water Resistive Barrier Layer 

and Prevent Electronic Devices from Water Shock, V. GUPTA, M.R. 

LINFORD, Brigham Young University 

TF-MoM5 Invited 

Atomic Layer Deposition for Astronomy and Space Applications, F. 

GREER, Jet Propulsion Laboratory/California Institute of Technology 

TF-MoM8 ALD-Enabled Pt/HfO2/Ti and Pt/TiO2/Ti Tunneling Diodes with 

Enhanced Tunneling Characteristic, O. AJAYI, G. MUMCU, J. WANG, University of 

South Florida 

11:00 am Invited talk continued. TF-MoM9 Uniform Adsorption of Ligand Free Ag Nanoparticles onto TiO2 

Thin Films Deposited by Atomic Layer Deposition, J.C. HALBUR, J.S. JUR, 

North Carolina State University 

11:20 am SS-MoM10 Analysis of Chemicurrent Components Induced by Hydrogen 

Oxidation on Pt/n-GaP and Pt/n-SiC Planar Schottky Nanostructures, S. 

DASARI, M. HASHEMIAN, E. KARPOV, University of Illinois at Chicago 

11:40 am SS-MoM11 Enhanced Chemicurrent Effect of H2 Oxidation on Porous MIM 

Nanostructures, E. KARPOV, M. HASHEMIAN, S. DASARI, University of Illinois at 

Chicago 

89 

TF-MoM10 Alloy Films Grown Using Al2O3 ALD and Alucone MLD: Critical 

Tensile Strains, Water Vapor Transmission Rates and Compliant 

Interlayers, S.H. JEN, B.H. LEE, S.M. GEORGE, University of Colorado, Boulder, P.F. 

CARCIA, R.S. MCLEAN, DuPont Central Research and Development


Room: 14 - Session VT-MoM 

Vacuum Gauging and Metrology 

Moderator: G.A. Brucker, Brooks Automation, Inc., Granville-Phillips 

Products 

8:20 am VT-MoM1 Sapphire-based Capacitance Diaphragm Vacuum Gauge 

Operating at 500 o C, T. ISHIHARA, H. TOCHIGI, J. YOSHINAGA, M. NAGATA, Azbil 

Corporation, Japan 

8:40 am VT-MoM2 On the Stability of Capacitance Diaphragm Gauges, M. WÜEST, C. 

STRIETZEL, INFICON Ltd, Liechtenstein 

9:00 am VT-MoM3 Invited 

A Truly Cold Vacuum Gauge for Ultra–high Vacuum and Extreme–high 

Vacuum Employing a Hydrogen Absorber, G.A. MULHOLLAN, Saxet Surface 

Science 

9:20 am Invited talk continued. 

9:40 am VT-MoM5 Investigation of Pumping Combinations to Achieve XHV, M.L. 

STUTZMAN, P.A. ADDERLEY, Thomas Jefferson National Accelerator Facility, M.A. 

MAMUN, Old Dominion University, M. POELKER, Thomas Jefferson National Accelerator 

Facility 

10:00 am VT-MoM6 Beyond Mercury Manometers: Are Optically-Based Primary 

Standards for Realization of the Pascal Within Reach?, J.H. HENDRICKS, 

J.A. STONE, G.F. STROUSE, D.A. OLSON, J.E. RICKER, National Institute of Standards 


10:20 am BREAK 


10:40 am VT-MoM8 Reduction of Statistical Scatter of Spinning Rotor Gauge 

Readings by Operation at Higher Rotational Frequency, J. SETINA, Institute 

of Metals and Technology, Slovenia 

11:00 am VT-MoM9 Long-Term Stability of Hot-Filament Metal-Envelope Enclosed 

Ionization Gauges, J.A. FEDCHAK, National Institute of Standards and Technology 

11:20 am VT-MoM10 Non-Destructive Gas Pressure Measurements Inside Sealed 

Vacuum Devices, R.S. GOEKE, T.P. HUGHES, Sandia National Laboratories 

11:40 am VT-MoM11 Vacuum Gauge Operation in Noisy Accelerator Environments, 

L. SMART, Brookhaven National Laboratory 

90


Room: 6 - Session AC+TF+SS+MI-MoA 

Actinides and Rare Earths: Thin Films and Surface Science 

Moderator: R.K. Schulze, Los Alamos National Laboratory 

2:00 pm AC+TF+SS+MI-MoA1 Invited 

Rare Earth 4f Hybridization in Gallium Nitride, J.W. MCCLORY, S.R. MCHALE, 

Air Force Institute of Technology, L. WANG, W.N. MEI, University of Nebraska-Lincoln, J.C. 

PETROSKY, Air Force Institute of Technology, J. WU, R. PALAI, University of Puerto Rico – 

San Juan, YA.B. LOSOVYJ, Louisiana State University, P.A. DOWBEN, University of 

Nebraska-Lincoln 


Room: 20 - Session AS-MoA 

Quantitative Surface Chemical Analysis, Technique 


Moderators: J.A. Ohlhausen, Sandia National Laboratories, 

S. Suzer, Bilkent University, Turkey 

AS-MoA1 Polyatomic and Gas Cluster Ion Beam Depth-Profiling: A Model 

Indicating the Most Appropriate Source for an Arbitrary, Known Polymer 

Matrix and Estimates of Polymer Sputter Rates, P.J. CUMPSON, N. SANO, 

NEXUS XPS Facility, Newcastle University, UK 

2:20 pm Invited talk continued. AS-MoA2 XPS Profiling of Biosensor Materials with Argon Cluster Ions, P. 

MACK, R.G. WHITE, T.S. NUNNEY, Thermo Fisher Scientific, UK, J.J. PIREAUX, P. 

LOUETTE, N. WEHBE, L. HOUSSIAU, FUNDP, Namur, Belgium 

2:40 pm AC+TF+SS+MI-MoA3 Revisiting the Yb Electronic Structure with Low- 

Energy Photoemission Spetroscopy, F. OFFI, CNISM and Univ. Roma Tre, Italy, P. 

VILMERCATI, L. PETACCIA, S. GOROVIKOV, ELETTRA Sincrotrone Trieste, Italy, A. 

RUOCCO, CNISM and Univ. Roma Tre, Italy, M.I. TRIONI, CNR-ISTM, Milano, Italy, A. 

RIZZO, CNISM and Univ. Roma Tre, Italy, A. GOLDONI, ELETTRA Sincrotrone Trieste, Italy, 

G. STEFANI, CNISM and Univ. Roma Tre, Italy, G. PANACCIONE, CNR-IOM, Basovizza- 

Trieste, Italy, S. IACOBUCCI, CNI-IFN, Rome, Italy 

3:00 pm AC+TF+SS+MI-MoA4 Erbium Rare Earth Thin Film Hydride Stress Studies 

as a Function of Processing Techniques, J.L. PROVO, J.L. Provo Consulting 

3:20 pm BREAK BREAK 

3:40 pm AC+TF+SS+MI-MoA6 Splat Cooling Technique Contributing to 

Understanding of Uranium Systems, L. HAVELA, Charles University, Czech 

Republic, A. GONÇALVES, J.-C. WAERENBOGH, L. PEREIRA, ITN Sacavém, Portugal, I. 

TKACH, Charles University, Czech Republic, N.-T. KIM-NGAN, Pedagogical University 

Cracow, Poland, T.B. SCOTT, University of Bristol, UK 

4:00 pm AC+TF+SS+MI-MoA7 Investigation of Rare Earth Doped Lithium Tetraborate 

Glasses with XAFS and Emission and Excitation Spectroscopy, T.D. 

KELLY, J.W. MCCLORY, D.A. BUCHANAN, A.T. BRANT, J.C. PETROSKY, Air Force 

Institute of Technology, YA.B. LOSOVYJ, Louisiana State University, V.T. ADAMIV, YA.V. 

BURAK, Institute of Physical Optics, P.A. DOWBEN, University of Nebraska-Lincoln 

4:20 pm AC+TF+SS+MI-MoA8 Effect of Ball Milling on Magnetic Properties of 

Er2Fe16Nb Alloy by High Energy Milling, B.K. RAI, S.R. MISHRA, The University 

of Memphis 

4:40 pm AC+TF+SS+MI-MoA9 Eu-implanted p-type GaN: Charge-Driven 

Luminescence Hysteresis and Identification of a Possible Charge-State- 

Alternation Resonance of the Mg Acceptor, K.P. O'DONNELL, P.R. EDWARDS, 

R.W. MARTIN, Strathclyde University, Scotland, UK, K. LORENZ, E. ALVES, V. 

DARAKCHIEVA, ITN Sacavém, Portugal, M. BOCKOWSKI, Unipress, Poland 

AS-MoA3 ToF-SIMS and NanoSIMS Imaging of Uranium Distributions in 

the Sediment of Hanford Site, Z. ZHU, Z. WANG, Pacific Northwest National 

Laboratory 

AS-MoA4 ToF-SIMS MCsx + Dual Beam Depth Profiling with Improved 

Dynamic Range, S. KAYSER, ION-TOF GmbH, Germany, N. HAVERCROFT, ION-TOF 

USA, Inc., F. KOLLMER, R. MOELLERS, E. NIEHUIS, ION-TOF GmbH, Germany 

AS-MoA6 Invited 

Surface Diffusion of Carbon on Metals and Complications for Auger 

Spectroscopy of Carburized Steels, W.D. JENNINGS, Case Western Reserve 

University 


AS-MoA8 Charge Referencing Complex Organic Materials in XPS using 

Hexatriacontane, L. LOHSTRETER, Medtronic, Inc. 

AS-MoA9 PADI: Ambient Surface Analysis of Polymers and Molecules – 

Metrology Development for Reliable Analysis, T.L. SALTER, I.S. GILMORE, 

National Physical Laboratory, UK 

5:00 pm AS-MoA10 Ion Beam Analysis of Surfaces and Thin Films, L.S. WIELUNSKI, 

R.A. BARTYNSKI, Rutgers University 

5:20 pm 

Monday Afternoon, October 29, 2012 

91


Room: 23 - Session BI-MoA 


Cell-Surface Interactions: High Throughput Methodologies 

Moderator: M.R. Alexander, University of Nottingham, UK 

2:00 pm BI-MoA1 Invited 

3D Niche Microarrays for Systems-Level Analyses of Stem Cell Fate, A. 

RANGA, M. LUTOLF, École Polytechnique Fédérale de Lausanne, Switzerland 


Room: 19 - Session EL+TF+BI+AS+EM+SS-MoA 

Spectroscopic Ellipsometry: From Organic and Biological 

Systems to Inorganic Thin Films 

Moderator: M.S. Wagner, The Procter & Gamble Company 

EL+TF+BI+AS+EM+SS-MoA1 Biochemical Optical Sensors Based on Highly- 

Ordered Slanted Columnar Thin Films, D. SCHMIDT, K.B. RODENHAUSEN, 

University of Nebraska-Lincoln, J. VANDERSLICE, T.E. TIWALD, J.A. Woollam Co., Inc., E. 

SCHUBERT, M. SCHUBERT, University of Nebraska-Lincoln 

2:20 pm Invited talk continued. EL+TF+BI+AS+EM+SS-MoA2 Studies of Optical Properties of Hybrid Jaggregates 

and Nanocrystal Quantum Dots Layers for Photonic 

Applications, K. ROODENKO, H.M. NGUYEN, L. CAILLARD, A. RADJA, O. SEITZ, 

YU.N. GARTSTEIN, A.V. MALKO, Y.J. CHABAL, The University of Texas at Dallas 

2:40 pm BI-MoA3 Microfluidic Gradient Systems to Generate Defined Cell 

Microenvironments and Study Cellular Fate Processes, P. WALLIN, E. 

BERNSON, J. GOLD, Chalmers University of Technology, Sweden 

3:00 pm BI-MoA4 What Makes the Heart Grow Fonder? High Throughput 

Screening of Synthetic Surfaces for Cardiomyocyte Culture, A.K. PATEL, 

M.R. ALEXANDER, M.C. DAVIES, University of Nottingham, UK, D.G. ANDERSON, R. 

LANGER, Massachusetts Institute of Technology, C. DENNING, University of Nottingham, 

UK 


3:40 pm BI-MoA6 Invited 

A Scaffoldomics Approach to Measuring Effects of Scaffold Properties 

on Stem Cell Fates, C. SIMON, National Institute of Standards and Technology 

EL+TF+BI+AS+EM+SS-MoA3 Invited 

Love and Death, the Story of Most Proteins and Most Surfaces as Told 

by Spectroscopic Ellipsometry, T. BENAVIDEZ, K. CHUMBUNI-TORRES, J.L. 

FELHOFER, C.D. GARCIA, The University of Texas at San Antonio 


4:00 pm Invited talk continued. Invited talk continued. 

4:20 pm BI-MoA8 High-throughput Discovery of Polymers for Stem Cell Culture, 

A.D. CELIZ, Univeristy of Nottingham, UK, M. MAHLSTEDT, A.L. HOOK, D.J. SCURR, 

University of Nottingham, UK, D.G. ANDERSON, R. LANGER, Massachusetts Institute of 

Technology, D.A. BARRETT, C. DENNING, L. YOUNG, M.C. DAVIES, M.R. ALEXANDER, 

University of Nottingham, UK 

4:40 pm BI-MoA9 Plasma Polymer Films at the Interface: Biomaterial Applications, 

B.R. COAD, University of South Australia 

5:00 pm BI-MoA10 A High Throughput Strategy for Studying Protein Preadsorption 

to Materials Developed for Stem Cell Culture, M. HAMMAD, 

University of Nottingham, UK, D.G. ANDERSON, R. LANGER, Massachusetts Institute of 

Technology, M.R. ALEXANDER, M.C. DAVIES, University of Nottingham, UK 

5:20 pm BI-MoA11 Combinatorial Development of Biomaterials for Pluripotent 

Human Stem Cell Culture, Y. MEI, Clemson University 

92 

EL+TF+BI+AS+EM+SS-MoA6 Invited 

Detailed Photoresist and Photoresist Processing Studies using 

Spectroscopic Ellipsometry, C. HENDERSON, Georgia Institute of Technology 

EL+TF+BI+AS+EM+SS-MoA8 Ellipsometric Characterization of a Thin 

Titaniumoxide Nanosheets Layer, H. WORMEESTER, G. MAIDECCHI, S. KUMAR, 

A. KUMAR, A. TEN ELSHOF, H.J.W. ZANDVLIET, MESA+ Institute for Nanotechnology, 

University of Twente, The Netherlands 

EL+TF+BI+AS+EM+SS-MoA9 Preparation of Abrupt LaAlO3 Surfaces 

Monitored by Spectroscopic Ellipsometry, C.M. NELSON, M. SPIES, L.S. 

ABDALLAH, S. ZOLLNER, Y. XU, H. LUO, New Mexico State University 

EL+TF+BI+AS+EM+SS-MoA10 Determination of the Refractive Index of a 

Gold-Oxide Thin Film Using X-Ray Photoelectron Spectroscopy and 

Spectroscopic Ellipsometry, K. COOK, G.S. FERGUSON, Lehigh University


Room: 9 - Session EM+TF+OX+GR-MoA 

High-k Dielectrics for MOSFETS II 

Moderators: C.L. Hinkle, University of Texas at Dallas 

H.J. Kim, National Institute of Aerospace (NIA) 


2:00 pm EM+TF+OX+GR-MoA1 Invited 

"6.1" Family: The Next Generation of III-V Semiconductors for Advanced 

CMOS: Epitaxial Growth and Passivation Challenges, C. MERCKLING, A. 

ALIAN, A. FIRRINCELLI, S. JIANG, M. CANTORO, J. DEKOSTER, M. CAYMAX, M. 

HEYNS, IMEC, Belgium 


Room: 15 - Session EN+TF-MoA 

Chalcogenide Solar Cells I 

Moderator: J. Luther, NREL 


2:40 pm EM+TF+OX+GR-MoA3 Improving Nucleation and Passivation of Ge(100) via 

H2O and H2O2 Dosing, T. KAUFMAN-OSBORN, K. KIANTAJ, J.S. LEE, A.C. 

KUMMEL, University of California San Diego 

3:00 pm EM+TF+OX+GR-MoA4 Electrical and Physical Characteristics of Highk/Metal 

Gate MOS Devices on MBE-Grown Germanium on Silicon Using 

Aspect Ratio Trapping, S.R.M. ANWAR, C. BUIE, N. LU, M.J. KIM, C.L. HINKLE, 

University of Texas at Dallas 


3:40 pm EM+TF+OX+GR-MoA6 In Situ Infrared Spectroscopy Study on the 

Temperature Dependence on the Growth Mechanism of Atomic Layer 

Deposition of Al2O3 on InP(100), W. CABRERA, The University of Texas at Dallas, 

I.M. POVEY, Tyndall National Institute, Y.J. CHABAL, The University of Texas at Dallas 

4:00 pm EM+TF+OX+GR-MoA7 Invited 

Ultimate Scaling of High-k Gate Dielectrics: Current Status and 

Challenges, T. ANDO, M.M. FRANK, E.A. CARTIER, B.P. LINDER, J. ROZEN, IBM T.J. 

Watson Research Center, K. CHOI, GLOBALFOUNDRIES, V. NARAYANAN, IBM T.J. 

Watson Research Center 

EN+TF-MoA1 Invited 

Research Strategies and Results Toward Improving Thin Film CdTe 

Photovoltaic Devices Beyond 20% Conversion Efficiency, T.A. GESSERT, 

National Renewable Energy Laboratory 


Nanocrystal-Ink and Soluble-Precursor Routes to Earth Abundant 

Element Kesterite Solar Cells, H.W. HILLHOUSE, University of Washington 



Developing Earth Abundant and Quantum Dot Materials for Thin-Film 

Photovoltaics, M. LAW, University of California Irvine 


4:20 pm Invited talk continued. EN+TF-MoA8 Synthesis of Photovoltaic Cu2ZnSnS4 via Ex Situ Sulfidation 

of Co-Sputtered Cu-Zn-Sn Thin Films, M. JOHNSON, M. MANNO, X. ZHANG, C. 

LEIGHTON, E.S. AYDIL, University of Minnesota 

4:40 pm EM+TF+OX+GR-MoA9 AR-XPS Study of Al2O3/In-based III-V Interfaces after 

Annealing under Vacuum at Low Temperature, E. MARTINEZ, H. GRAMPEIX, 

O. DESPLATS, CEA, LETI, MINATEC Campus, France, A. HERRERA-GOMEZ, O. 

CEBALLOS-SANCHEZ, CINVESTAV-Unidad Queretaro, Mexico, J. GUERRERO, K. 

YCKACHE, F. MARTIN, CEA, LETI, MINATEC Campus, France 

5:00 pm EM+TF+OX+GR-MoA10 Effect of a H2 Plasma Pre-treatment on the 

Reduction of Native Oxides at the PEALD Al2O3/InAs Interface, E. 

CLEVELAND, L. RUPPALT, J.B. BOOS, B. BENNETT, J. CHAMPLAIN, S.M. PROKES, 

Naval Research Laboratory 

EN+TF-MoA9 Crossover from Intergranular Hopping to Conventional 

Charge Transport in Pyrite FeS2 Thin Films, X. ZHANG, M. MANNO, A. 

BARUTH, M. JOHNSON, E.S. AYDIL, C. LEIGHTON, University of Minnesota 

EN+TF-MoA10 Plasma Assisted Synthesis of Pyrite Absorbers, R. MORRISH, 

R. SILVERSTEIN, C.A. WOLDEN, Colorado School of Mines 

5:20 pm EN+TF-MoA11 Development and Characterization of dc Plasma Sputtered 

Molybdenum Thin Films with Bi- and Tri-layer Stress Configuration, M. 

ISLAM, King Saud University, Saudi Arabia, A. AKRAM, A. HAYAT, M. KHAN, M. MUJAHID, 

National University of Science and Technology, Pakistan 

93



Room: 13 - Session GR+EM+ET+NS+TF-MoA 

Electronic Properties and Charge Transport 

Moderator: T.W. Michely, Universität zu Köln, Germany 

2:00 pm GR+EM+ET+NS+TF-MoA1 Influence of Substrate Offcut on Electrical and 

Morphological Properties of Epitaxial Graphene, R.L. MYERS-WARD, V.D. 

WHEELER, L.O. NYAKITI, T.J. ANDERSON, F.J. BEZARES, J.D. CALDWELL, A. NATH, N. 

NEPAL, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Laboratory 

2:20 pm GR+EM+ET+NS+TF-MoA2 Direct Determination of Dominant Scatterer in 

Graphene on SiO2, J. KATOCH, D. LE, T.S. RAHMAN, M. ISHIGAMI, University of 

Central Florida 

2:40 pm GR+EM+ET+NS+TF-MoA3 Invited 

Tuning Electronic Properties of Graphene by Controlling its Environment, 

K.I. BOLOTIN, Vanderbilt University 

MEMS and NEMS 

Room: 10 - Session MN-MoA 

Multi-scale Interactions of Materials and Fabrication at the 

Micro- and Nano-scale 

Moderator: M. Metzler, Cornell University 

MN-MoA1 Invited 

Acute Stress in Silicon Nitride, J.M. PARPIA, V.P. ADIGA, B. ILIC, R.A. BARTON, R. 

DE ALBA, Cornell University, I. WILSON-RAE, Technische Universität München, Germany, 

H.G. CRAIGHEAD, Cornell University 


MN-MoA3 In Situ SEM Micro Tension Tests on Nanoscale Single Crystal 

Metals and Nanocrystalline Metals, M. YILMAZ, J.W. KYSAR, Columbia University 

3:00 pm Invited talk continued. MN-MoA4 Capacitively and Piezoelectrically Dual-Transduced Hybrid 

MEMS Resonators, I.-T. WU, J. DEWDNEY, J. WANG, University of South Florida 


3:40 pm GR+EM+ET+NS+TF-MoA6 Study of Impurity-Induced Inelastic Scattering on 

Suspended Graphene by Scanning Confocal Micro-Raman 

Spectroscopy, L.W. HUANG, C.S. CHANG, Academia Sinica, Taiwan, Republic of China 

4:00 pm GR+EM+ET+NS+TF-MoA7 The Adsorption of Molecules with Large Intrinsic 

Electrostatic Dipoles on Graphene, L. KONG, Univ. of Nebraska-Lincoln, G.J. 

PEREZ MEDINA, Univ. of Nebraska-Lincoln, Univ. of Puerto Rico, J. COLÓN SANTANA, 

Univ. of Nebraska-Lincoln, L. ROSA, Univ. of Nebraska-Lincoln, Univ. of Puerto Rico, L. 

ROUTABOUL, P. BRAUNSTEIN, Maître de conférences de l'Université de Strasbourg, 

France, B. DOUDIN, Institut de Physique et Chimie des Matériaux de Strasbourg, France, C.- 

M. LEE, J. CHOI, Kyung Hee Univ., Korea, P.A. DOWBEN, Univ. of Nebraska-Lincoln 

4:20 pm GR+EM+ET+NS+TF-MoA8 Invited 

Growth of and Interactions in Epitaxial Graphene Layers, A. BOSTWICK, 

Lawrence Berkeley National Laboratory, A. WALTER, TH. SEYLLER, Lawrence Livermore 

National Laboratory, K. HORN, E. ROTENBERG, Lawrence Berkeley National Laboratory 

MN-MoA6 Fabrication and Testing of Suspended Piezoelectric 

Nanocomposite Membranes, J.R. FOX, S.B. HOROWITZ, J.P. CORTES, M.S. 

ALLEN, A.D. MATHIAS, L.A. BARKETT, Ducommun Miltec, M. SANGHADASA, U.S. Army 

Aviation and Missile Research Development and Engineering Center 

MN-MoA7 Fabrication of Nanoelectromechanical Systems via the 

Integration of Glancing Angle Deposition Thin Films, J.N. WESTWOOD, 

V.T.K. SAUER, J.K. KWAN, University of Alberta, Canada, W.K. HIEBERT, National 

Institutute for Nanotechnology, Canada, J.C. SIT, University of Alberta, Canada 

MN-MoA8 Electroactive Polymeric MEMS Actuators Fabricated by 

Thermal Imprinting of P(VDF-TrFE-CFE) and Poly(dimethylsiloxane) 

(PDMS), J. SHKOVSKY, L. ENGEL, A. REUVENY, Y. SVERDLOV, Y. SHACHAM- 

DIAMAND, D. SCHREIBER, S. KRYLOV, Tel Aviv University, Israel 

4:40 pm Invited talk continued. MN-MoA9 A CMOS MEMS Gas Sensor Using Monolayer Protected Gold 

Nano-Clusters Coating on Three-Dimensional Interdigitated Electrodes, 

Y.C. CHEN, C.Y. CHANG, National Taiwan University, H.L. LU, C.-J. LU, National Taiwan 

Normal University, W.-C. TIAN, National Taiwan University 

5:00 pm GR+EM+ET+NS+TF-MoA10 Squeezing of the Graphene Dirac Cone 

Observed by Scanning Tunneling Spectroscopy, J. CHAE, S. JUNG, Y. ZHAO, 

N.B. ZHITENEV, J.A. STROSCIO, Center for Nanoscale Science and Technology / NIST, A. 

YOUNG, C. DEAN, L. WANG, Y. GAO, J.C. HONE, K.L. SHEPARD, P. KIM, Columbia 

University 

5:20 pm GR+EM+ET+NS+TF-MoA11 Interfacial Interaction of Graphene and Metal 

Surfaces Investigated by Resonant Inelastic X-ray Scattering, L. ZHANG, 

University of Science and Technology of China, Advanced Light Source, J.H. GUO, Advance 

Light Source, J.-H. ZHU, University of Science and Technology of China 

94 

MN-MoA10 Integration of Functionalized Biological Nanostructures with 

Conventional Transducer Fabrication Schemes, X. FAN, N. SIWAK, A. 

BROWN, J. CULVER, R. GHODSSI, University of Maryland 

MN-MoA11 A Novel Computational and Experimental Methodology for 

Development of Therapeutic Microdevices for Rapid Reconstitution, S. 

D'HERS, Buenos Aires Institute of Technology, Argentina, A. ALEXANDER-KATZ, N.M. 

ELMAN, Massachusetts Institute of Technology



Room: 16 - Session NM+NS+MS+EM-MoA 

ALD and Scalable Processes for Nanomanufacturing 

Moderator: T.S. Mayer, Penn State University 

2:00 pm NM+NS+MS+EM-MoA1 From R&D Towards Industrial Atomic Layer 

Deposition: Challenges in Scaling up, M. PUTKONEN, Beneq Oy, Finland 

2:20 pm NM+NS+MS+EM-MoA2 Invited 

Enabling ALD for Semiconductor Manufacturing, M. CHANG, Applied Materials 

Inc. 


3:00 pm NM+NS+MS+EM-MoA4 Migration to ALD Techniques in the Semiconductor 

Industry: Pattern Effects, Microloading and Film Thickness Variability in 

Dielectric Thin Films Deposition, M.P. BELYANSKY, IBM Semiconductor R&D 

Center 


3:40 pm NM+NS+MS+EM-MoA6 Interface Analysis of PEALD TaCN Deposited on 

HfO2 using Parallel Angle Resolved X-ray Photoelectron Spectroscopy 

for sub-20nm Gate Last CMOS Transistors, F. PIALLAT, ST Microelectronics, 

France, V. BEUGIN, R. GASSILLOUD, P. MICHALLON, CEA Grenoble, France, L. 

DUSSAULT, B. PELISSIER, LTM - MINATEC - CEA/LETI, France, C. LEROUX, CEA 

Grenoble, France, P. CAUBET, ST Microelectronics, France, C. VALLÉE, LTM - MINATEC - 

CEA/LETI, France 

4:00 pm NM+NS+MS+EM-MoA7 Deposition Temperature Dependence of TiO2 Thin 

Films Deposited by Remote Plasma Atomic Layer Deposition, J.S. LEE, 

H.Y. JEON, J.G. PARK, H.J. KIM, H.T. JEON, Hanyang University, Republic of Korea 

4:20 pm NM+NS+MS+EM-MoA8 Atmospheric Pressure Atomic Layer Deposition of 

Al2O3 using Trimethylaluminum and Ozone, M.B. MOUSA, D.H. KIM, C.J. 

OLDHAM, G.N. PARSONS, North Carolina State University 

4:40 pm NM+NS+MS+EM-MoA9 An Industrial Solution for Surface Passivation of c-Si 

using Al2O3 Film Deposited by In-line Atmosphere Chemical Vapor 

Deposition, K. JIANG, Gebr. Schmid GmbH + Co, Germany, K. DAVIS, University of 

Central Florida, C. DEMBERGER, H. ZUNFT, H. HAVERKAMP, Gebr. Schmid GmbH + Co, 

Germany, W.V. SCHOENFELD, University of Central Florida, D. HABERMANN, Gebr. 

Schmid GmbH + Co, Germany 

5:00 pm NM+NS+MS+EM-MoA10 Invited 

Solution Based Processing of Floating Gate Memory using Additive- 

Driven Self-Assembly and Nanoimprint Lithography, J. WATKINS, University 

of Massachusetts 


Room: 12 - Session NS+SP-MoA 

Nanopatterning and Nanolithography 

Moderator: P.E. Sheehan, U.S. Naval Research Laboratory 

NS+SP-MoA1 Optical Properties of As-Prepared and Annealed Gold 

Nanostructures Fabricated by Interference Lithography, A.B. 

TSARGORODSKA, University of Sheffield, UK, A.V. NABOK, Sheffield Hallam University, 

UK, A.J. LEE, University of Leeds, UK, G.J. LEGGET, University of Sheffield, UK 

NS+SP-MoA2 Invited 

Fast Turnaround 3D Nanolithography using Heated Probes – from 

Nanofabrication to Directed Assembly, A.W. KNOLL, P. PAUL, IBM Research - 

Zurich, Switzerland, F. HOLZNER, IBM Research - Zurich, ETH Zurich, Switzerland, J.L. 

HEDRICK, IBM Research - Almaden, M. DESPONT, IBM Research - Zurich, Switzerland, C. 

KUEMIN, IBM Research - Zurich, ETH Zurich, Switzerland, H. WOLF, IBM Research - Zurich, 

Switzerland, N.D. SPENCER, ETH Zurich, Switzerland, U. DUERIG, IBM Research - Zurich, 

Switzerland 

NS+SP-MoA4 Laser Assisted Electron Beam Induced Deposition of 

Platinum, N.A. ROBERTS, University of Tennessee Knoxville, J.D. FOWLKES, Oak Ridge 

National Laboratory, G.A. MAGEL, T.M. MOORE, Omniprobe, Inc. an Oxford Instruments 

Company, P.D. RACK, University of Tennessee Knoxville 

NS+SP-MoA6 Parallel Stacking of Extended π-conjugated Molecules on 

Si(100)-H Surface, M.Z. HOSSAIN, Gunma University, Japan, H. KATO, Osaka 

University, Japan, M. KAWAI, The University of Tokyo and RIKEN, Japan 

NS+SP-MoA7 Kinetics of disilane reaction on Si(100)-(2x1): Flux, 

Temperature, and H-coverage Dependence, D. DICK, J.-F. VEYAN, University 

of Texas at Dallas, P. MATHIEU, Mc Gill University, Canada, J.N. RANDALL, Zyvex 

Laboratories, Y.J. CHABAL, University of Texas at Dallas 

NS+SP-MoA8 SPM Lithography on Silicon Reconstructed and Hydrogen- 

Passivated Surface, J. FU, K. LI, N. PRADEEP, L. CHEN, R. SILVER, National Institute 

of Standards and Technology 

NS+SP-MoA9 Ultra-High Frequency Surface Acoustic Wave Generation in 

Silicon Using Inverted Nanoimprint Lithography, S. BÜYÜKKÖSE, University of 

Twente, Netherlands, B. VRATZOV, NT&D – Nanotechnology and Devices, Germany, D. 

ATAÇ, J. VAN DER VEEN, University of Twente, Netherlands, P.V. SANTOS, Paul-Drude- 

Institut für Festkörperelektronik, Germany, W.G. VAN DER WIEL, University of Twente, 

Netherlands 

NS+SP-MoA10 Variance of Proximity Effect Correction Parameter 

Measured on Silicon, D.A. CZAPLEWSKI, L.E. OCOLA, Argonne National Laboratory 

5:20 pm Invited talk continued. NS+SP-MoA11 Nanopatterning of Poly(N-isopropylacrylamide) based 

Hydrogel – Gold Nanoparticle Composite, K.J. SUTHAR, D.C. MANCINI, R.S. 

DIVAN, Argonne National Laboratory, O.N. AHANOTU, University of Michigan 

95

Oxide Heterostructures-Interface Form & Function Focus 

Topic 

Room: 7 - Session OX+SS+TF+MI-MoA 

Chemistry of Oxide Surfaces and Interfaces 

Moderator: M. Engelhard, EMSL, Environmental Molecular Sciences 

Laboratory 

2:00 pm OX+SS+TF+MI-MoA1 Investigation of Al2O3 Nanostructure Surfaces Using 

Charge Optimized Many Body Potentials, D.E. YILMAZ, T. LIANG, S.B. 

SINNOTT, S.R. PHILLPOT, University of Florida 

2:20 pm OX+SS+TF+MI-MoA2 Manipulating Ferroelectric Surfaces for Direct NOx 

Decomposition, M.W. HERDIECH, A. KAKEKKHANI, S. ISMAIL-BEIGI, E.I. ALTMAN, 

Yale University 

2:40 pm OX+SS+TF+MI-MoA3 Invited 

Catalyst Synthesis by Atomic Layer Deposition, P.C. STAIR, Northwestern 

University & Argonne National Laboratory 



3:40 pm OX+SS+TF+MI-MoA6 Energy Alignment at Organic/Oxide Interfaces: The 

Influence of Adsorption Geometry and Chemical Bond on Interface 

Dipole, S. RANGAN, C. RUGGIERI, S. COH, R.A. BARTYNSKI, K. CHITRE, E. 

GALOPPINI, Rutgers University 

4:00 pm OX+SS+TF+MI-MoA7 Invited 

Energy-Level Alignment at Organic/Oxide Interfaces, M.T. GREINER, Z.-H. 

LU, University of Toronto, Canada 


Room: 24 - Session PS+BI-MoA 

Applications of (Multiphase) Atmospheric Plasmas 

(including Medicine and Biological Applications) 

Moderator: G.Y. Yeom, Sungkyunkwan University, Korea 

PS+BI-MoA1 Plasmas in Saline Solution Sustained Using Bipolar Pulsed 

Power Source – Tailoring the Discharge Behavior Using the Negative 

Pulses, H.W. CHANG*, C.C. HSU, National Taiwan University, Taiwan, Republic of China 

PS+BI-MoA2 Low Temperature Plasma Deactivation of Endotoxic 

Biomolecules: The Effects on Lipid A, T.-Y. CHUNG, J.-W. CHU, D.B. GRAVES, 

University of California Berkeley, E. BARTIS, J. SEOG, G.S. OEHRLEIN, University of 

Maryland 

PS+BI-MoA3 Invited 

Nonthermal Bioplasma Sources and its Interactions to the Microbial, 

Fungal, Yeast and Living Cells, E.H. CHOI, Y. KIM, G.S. CHO, G. KWON, B.K. MIN, 

H. UHM, Kwangwoon University, Republic of Korea, P. SUANPOOT, Maejo University Phrae 

Campus, Thailand, G. LEE, R. JUNG, B. PARK, Kwangwoon University, Republic of Korea 

PS+BI-MoA6 Deactivation of Lipopolysaccharide and Lipid A by Radicals 

Produced in Inductively Coupled Plasmas, E. BARTIS, University of Maryland, 

T.-Y. CHUNG, J.-W. CHU, D.B. GRAVES, University of California Berkeley, J. SEOG, G.S. 

OEHRLEIN, University of Maryland 

PS+BI-MoA7 Localised, Non-Contact Surface Modification with 

Microplasma for Biotechnological Applications, S.A. AL-BATAINEH, E.J. SZILI, 

D.A. STEELE, N.H. VOELCKER, H.J. GRIESSER, R.D. SHORT, University of South 

Australia 

4:20 pm Invited talk continued. PS+BI-MoA8 Invited 

Biocompatible Nanocomposites Synthesized by Gas-Liquid Phases 

Plasmas, T. KANEKO, Q. CHEN, R. HATAKEYAMA, Tohoku University, Japan 

4:40 pm OX+SS+TF+MI-MoA9 Variable Kinetic Energy XPS of the Buried P3HT/ITO 

Interface, M.T. BRUMBACH, Sandia National Laboratories, J.C. WOICIK, National 

Institute of Standards and Technology 

5:00 pm OX+SS+TF+MI-MoA10 Organic Molecules Adsorbed on the ZnO(10-10) 

Surface: An Infrared Reflection Absorption Spectroscopy Study, M. 

BUCHHOLZ, Karlsruhe Institute of Technology, Germany, H. NOEI, Y. WANG, Ruhr 

University Bochum, Germany, A. NEFEDOV, CH. WÖLL, Karlsruhe Institute of Technology, 

Germany 

5:20 pm OX+SS+TF+MI-MoA11 In Situ Interface Analysis of Self-Assembled 

Monolayers on Metal Surfaces at High Water Activities by Means of a 

PM-IRRAS/QCM-Setup, I. GINER, M. MAXISCH, G. GRUNDMEIER, University of 

Paderborn, Germany 

* Coburn & Winters Student Award Finalist 


96 


PS+BI-MoA10 Organization of Dielectric Barrier Discharges in the 

Presence of Structurally-Inhomogeneous Wood Substrates, O. 

LEVASSEUR, Université de Montréal, Canada, A. BOUAROURI, N. NAUDÉ, R. 

CLERGEREAUX, N. GHERARDI, Université de Toulouse, UPS, INPT, LAPLACE, France, L. 

STAFFORD, Université de Montréal, Canada 

PS+BI-MoA11 Role of Substrate Outgassing on the Formation Dynamics of 

Either Hydrophilic of Hydrophobic Wood Surfaces in Atmospheric- 

Pressure, Organosilicon Plasmas, O. LEVASSEUR, L. STAFFORD, Université de 

Montreal, Canada, N. GHERARDI, N. NAUDÉ, Université de Toulouse, UPS, INPT, 

LAPLACE, France, P. BLANCHET, FPInnovations, Canada, B. RIEDL, Université Laval, 

Canada, A. SARKISSAN, Plasmionique, Canada


Room: 25 - Session PS2-MoA 

Plasma Modeling 

Moderator: I. Schweigert, Institute of Theoretical and Applied 

Mechanics, Russia 

2:00 pm PS2-MoA1 Invited 

Tailored Ion Energy Distributions on Plasma Electrodes, P. DIOMEDE, D.J. 

ECONOMOU, V.M. DONNELLY, University of Houston 


2:40 pm PS2-MoA3 Self-Consistent Multi-Dimensional Modeling of Inductively 

Coupled Plasmas, A. AGARWAL, J. KENNEY, M.-F. WU, S. RAUF, K. COLLINS, 

Applied Materials Inc. 

3:00 pm PS2-MoA4 Feature Profile Modeling of STT-MRAM Etch, P. STOUT, Applied 

Materials Inc. 


3:40 pm PS2-MoA6 Development of a New Industry Focused Plasma Simulation 

Tool, A.I. WILLIAMS, University College London, UK, S. LOPEZ-LOPEZ, Quantemol Ltd., 

UK, W. BRIGG, J. TENNYSON, University College London, UK 

4:00 pm PS2-MoA7 Mechanism of Generating Ions and Radicals in Fluorocarbon 

Plasma Investigated by Reaction Model Analysis, Y. KONDO*, Y. MIYAWAKI, 

K. TAKEDA, H. KONDO, K. ISHIKAWA, T. HAYASHI, M. SEKINE, M. HORI, Nagoya 


4:20 pm PS2-MoA8 The Search for a Physical Sheath: Fine Meshes, Collisions 

and Secondary Emission when Modeling Plasma Sheaths, C. 

HENDERSON, University of Wisconsin-Madison 

4:40 pm PS2-MoA9 Excitation of Ion Acoustic Waves by Electron Beams, I.D. 

KAGANOVICH, Princeton Plasma Physics Laboratory, D. SYDORENKO, University of 

Alberta, Canada, E. TOKLUOGLU, E.A. STARTSEV, A.V. KHRABROV, Princeton Plasma 

Physics Laboratory, L. CHEN, P. VENTZEK, R. SUNDARARAJAN, Tokyo Electron America 

5:00 pm PS2-MoA10 Multi-Peaked and Stepped Electron Velocity Distributions in 

RF-DC Discharges with Secondary Emission, A.V. KHRABROV, I.D. 

KAGANOVICH, Princeton Plasma Physics Laboratory, D. SYDORENKO, University of 

Alberta, Canada, E. TOKLUOGLU, E.A. STARTSEV, Princeton Plasma Physics Laboratory, 

L. CHEN, P. VENTZEK, R. SUNDARARAJAN, Tokyo Electron America 

5:20 pm PS2-MoA11 Simulations of the Radial Line Slot Antenna Plasma Source, P. 

VENTZEK, Tokyo Electron America, S. MAHADEVAN, Esgee Technologies, J. 

YOSHIKAWA, Tokyo Electron Technology Development Institute, INC., L. RAJA, University 

of Texas at Austin, T. IWAO, Tokyo Electron Technology Development Institute, INC., L. 

CHEN, R. SUNDARARAJAN, J. ZHAO, Tokyo Electron America, T. NOZAWA, K. 

ISHIBASHI, Tokyo Electron Technology Development Institute, INC., R. UPADHYAY, Esgee 

Technologies 




Room: 22 - Session SE+NS-MoA 

Nanostructured Thin Films and Coatings II: Multifunctional 

Properties 

97 

Moderator: E. Broitman, Linköping University, Sweden 

SE+NS-MoA1 Invited 

Layered Binary Metal Oxide Solid Lubricants for High Temperature 

Moving Assemblies, S. AOUADI, D. STONE, Southern Illinois University Carbondale, A. 

MARTINI, University of California Merced, C. MURATORE, A.A. VOEVODIN, Air Force 

Research Laboratory 

SE+NS-MoA3 Free-standing Nanoscale Gold Pyramidal Films with Milled 

Nanopores, J.A. GRANT-JACOB, W.S. BROCKLESBY, T. MELVIN, Optoelectronics 

Research Centre 

SE+NS-MoA4 Synthesis of Superhydrophobic PTFE-like Thin Films by 

Self-Nanostructuration in a Hybrid Plasma Process, F. HENRY, University of 

Mons, Belgium, F. RENAUX, S. COPPÉE, Materia Nova Research Center, Belgium, R. 

LAZZARONI, University of Mons, Belgium, N. VANDENCASTEELE, F. RENIERS, ULB, 

Belgium, R. SNYDERS, University of Mons, Belgium 

SE+NS-MoA6 Creation of Highly Functionalized Polymer-Metal Oxide 

Nanomaterials Using A Novel Rotating Drum Plasma Reactor, J.C. 

SHEARER, E.R. FISHER, Colorado State University 

SE+NS-MoA7 Field Emission Dynamic Investigation of the Polymer- 

MWCNT Composite Films Depending from Vacuum Conditions, E.O. 

POPOV, A.G. KOLOSKO, M.V. ERSHOV, S.V. FILIPPOV, A.F. Ioffe Physico-Technical 

Institute, Russian Federation 

SE+NS-MoA8 Invited 

Cost Efficiency Trade Off in Nanostructured Thermoelectric Energy 

Conversion Systems, A. SHAKOURI, K. YAZAWA, Birck Nanotechnology Center, 

Purdue University 


SE+NS-MoA10 The Effects of Interfacial Bond Stiffness on Heat Transport: 

An Experimental Study Using Self-Assembled Monolayers, M.D. LOSEGO, 

M. GRADY, N.R. SOTTOS, D.G. CAHILL, P.V. BRAUN, University of Illinois at Urbana 

Champaign 

SE+NS-MoA11 Growth, Nanostructure Formation, and Physical Properties 

of Single-Phase, Epitaxial, SrTiO3-TiO2 Nanocomposites: A Topological 

Insulator Approach to High-T Thermoelectrics, B.M. HOWE, Air Force Research 

Laboratory, E. THOMAS, University of Dayton Research Institute, D. DUDIS, Air Force 

Research Laboratory


Room: 21 - Session SS-MoA 

Surface Dynamics 

Moderator: D.J. Auerbach, University of California, Santa Barbara 

2:00 pm SS-MoA1 Invited 

Creation and Reaction of Solvated Electrons at the Vacuum-Liquid 

Interface, W.A. ALEXANDER, Montana State University, J.P. WIENS, University of 

Wisconsin-Madison, T.K. MINTON, Montana State University, G.M. NATHANSON, University 

of Wisconsin-Madison 


2:40 pm SS-MoA3 Liquid-Crystal to Solid-Crystal Phase Transition in Flexible Aryl- 

Triazole Oligomer Adsorbates at the Liquid / HOPG Interface, B. HIRSCH, 

K. MCDONALD, A. FLOOD, S.L. TAIT, Indiana University - Bloomington 

3:00 pm SS-MoA4 State-Resolved Studies of Methane Activation: Mechanistic 

Insights into Gas-Surface Reactivity, A.L. UTZ, Tufts University 


3:40 pm SS-MoA6 Autocatalytic Decomposition Mechanism of Aspartic Acid on 

Cu(110) Surfaces, B.S. MHATRE, A.J. GELLMAN, Carnegie Mellon University 

4:00 pm SS-MoA7 Quantum Tunneling Driven Assembly and Diffusion of 

Hydrogen and Deuterium on Cu(111), A.D. JEWELL*, Tufts University, G. PENG, 

University of Wisconsin Madison, G. KYRIAKOU, Tufts University, M. MAVRIKAKIS, 

University of Wisconsin Madison, C.H. SYKES, Tufts University 

4:20 pm SS-MoA8 H Absorption Depth Profiling Measurement at Ultra-thin Pd(111) 

Film by Thermal Desorption Spectroscopy, Y. AOKI, S. NAKAJIMA, H. 

HIRAYAMA, Tokyo Institute of Technology, Japan 

4:40 pm SS-MoA9 Novel Insight Into the Formation Mechanism of Subsurface 

Hydrogen at Pd(110) Surfaces, S. OHNO, M. WILDE, K. FUKUTANI, The University 

of Tokyo, Japan 

5:00 pm SS-MoA10 Glide-Plane-Specific Selectivity of HREELS Demonstrated in 

H:Si(110)-(1x1) Phonon Dispersion, T. YAMADA, RIKEN, Japan, S.Y. 

MATSUSHITA, Tohoku University, Japan, H. KATO, Science University of Tokyo, Japan, A. 

KASUYA, S. SUTO, Tohoku University, Japan 

5:20 pm SS-MoA11 The Lifetimes and Energy Redistribution of Intramolecular 

Vibrational Modes of a Surface Adsorbate: Methoxy on Cu(100), P. 

UVDAL, Lund University, Sweden, P. ANDERSSON, University of Copenhagen, Denmark, J. 

BLOMQUIST, Malmö University, Sweden, A. FUENTES, M. PERSSON, University of 

Liverpool, UK 

* Morton S. Traum Award Finalist 


98 

Thin Film 

Room: 11 - Session TF+EN-MoA 


Moderator: R.K. Grubbs, Sandia National Laboratories 

TF+EN-MoA1 Invited 

Atomic Layer Deposition for the Synthesis of Nanostructured Catalysts, 

J.W. ELAM, C. MARSHALL, Argonne National Lab, E. STACH, F. RIBEIRO, Purdue Univ., J. 

GREELEY, Argonne National Lab, J. NOTESTEIN, K. POEPPELMEIER, Northwestern Univ., 

L. CURTISS, Argonne National Lab, M. KUNG, P.C. STAIR, Northwestern Univ., L. WINANS, 

Argonne National Lab, S. NGUYEN, Northwestern Univ. 

TF+EN-MoA3 Using Metalcone Films Grown by Molecular Layer 

Deposition to Form Conducting Metal Oxide-Carbon Composite Films, A. 

ABDULAGATOV, K. TERAUDS, J. TRAVIS, A. CAVANAGH, R. RAJ, CU Boulder, S.M. 

GEORGE, University of Colorado, Boulder 

TF+EN-MoA4 In Situ Growth Study and Material Characterization of 

Plasma-Assisted Atomic Layer Deposition of Palladium, M.J. WEBER, A.J.M. 

MACKUS, M.A. VERHEIJEN, N. LEICK-MARIUS, A. BOL, W.M.M. KESSELS, Eindhoven 

University of Technology, Netherlands 

TF+EN-MoA6 ALD-enabled Nanostructures for High Rate Li-ion Storage, X. 

CHEN, H. ZHU, L. HU, G.W. RUBLOFF, University of Maryland 

TF+EN-MoA7 Enhancement of the Heat Recovery Mechanism in Infrared 

Photovoltaic Devices Promoted by Thin Planar ALD Oxide Films, A.J. 

VINCENT-JOHNSON, H.S. MANN, Y. SCHWAB, James Madison University, A.E. 

MASTERS, Custom Thermoelectrics Inc., X. HU, G. SCAREL, James Madison University 

TF+EN-MoA8 Ultra-thin TiO2 Blocking Layer by Atomic Layer Deposition 

for Dye-Sensitized Solar Cells, D.H. KIM, M. WOODROOF, K.M. LEE, B. 

KALANYAN, G.N. PARSONS, North Carolina State University 

TF+EN-MoA9 Growth of Earth Abundant Pyrite Solar Absorber by using 

Atomic Layer Deposition, T. DHAKAL, Center for Autonomous Solar Power, SUNY- 

Binghamton


Room: 14 - Session VT-MoA 

Gas Flow, Leaks, Permeation and Mass Analysis 

Moderator: J.A. Fedchak, National Institute of Standards and 

Technology 

2:00 pm VT-MoA1 Invited 

First International Comparison of Standard Leak Calibrations of 

Metrological Institutes, K. JOUSTEN, PTB, Germany, K. ARAI, NMIJ, Japan, U. 

BECKER, O. BODNAR, PTB, Germany, F. BOINEAU, LNE, France, J.A. FEDCHAK, NIST, 

V. GOROBEY, VNIIM, Russian Federation, W. JIAN, SPRING, Singapore, D. MARI, INRIM, 

Italy, P. MOHAN, NPL/I, India, J. ŠETINA, IMT, Slovenia, B. TOMAN, NIST, M. VICAR, CMI, 

Czech Republic, YH. YAN, NIM, China 


2:40 pm VT-MoA3 Comparison of the Flow Ratio of the Permeation Type Helium 

Standard Leaks and the Gas Flow Generator Composed with a Small 

Conductance Element Made by Sintered Stainless Steel, N. TAKAHASHI, 

ULVAC Inc., Japan, H. YOSHIDA, AIST Japan 

3:00 pm VT-MoA4 Porous Plug Made of Sintered Stainless Steel used as Standard 

Conductance Element, H. YOSHIDA, K. ARAI, T. KOBATA, National Institute of AIST, 

Japan 

3:20 pm BREAK 

3:40 pm VT-MoA6 Measurement of Gas Transport in Solids by a Saturation/ 

Outgassing Method, L. WANG, J.A. TANSKI, R.Y. WEINBERG, Los Alamos National 

Laboratory 

4:00 pm VT-MoA7 Report on Workshop on Measurement Characteristics and Use 

of Quadrupole Mass Spectrometers for Vacuum Applications, K. JOUSTEN, 

Physikalisch Technische Bundesanstalt, Germany, J. ŠETINA, Institute of Metals and 

Technology, Slovenia, R. ELLEFSON, REVac Consulting 

4:20 pm VT-MoA8 Invited 

Mass Spectrometry a Mile Deep: Issues and Solutions for Underwater 

Vacuum Systems, R.T. SHORT, SRI International 



5:00 pm VT-MoA10 Performance Optimization for Autoresonant Ion Trap Mass 

Spectrometers, G.A. BRUCKER, J. RATHBONE, B. HORVATH, Brooks Automation, 

Inc., Granville-Phillips Products 

5:20 pm VT-MoA11 Differential Pumping Method for a Fast Partial Pressure 

Analyzer of Recent Design to Extend its Upper Pressure Limit Up to the 

Torr Range, P.C. ARNOLD, T.C. SWINNEY, Brooks Automation, Inc., Granville-Phillips 

Products 

99

Lunch 




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100

TUESDAY SPECIAL EVENTS 


7:00 a.m History Committee Meeting—Meeting Room 2 (H) 

8:00 a.m. Awards Committee Meeting and Lunch—Meeting Room 3 (H) 

8:00 a.m. Science Educators’ Workshop—Meeting Room 6 (H) 

8:20 a.m. Gaede Langmuir Award Lecture, D. Menzel, Fritz-Haber Insitut and Techn Univ. of Muenchen, Germany—21 (CC) 

9:40 a.m. Vacuum Technology Division Business Meeting—14 (CC) 

10:00 a.m. Session Coffee Break—West Exhibit Hall (CC) 

12:00 p.m. Chapters, Divisions, and Groups Meeting and Lunch—Meeting Room 5 (H) 

12:00 p.m. Exhibit Hall Lunch—West Exhibit Hall (CC) 

12:00 p.m. Job Information Forum and Lunch—Salon E (H) 

12:00 p.m. Science Educators’ Workshop Lunch—Meeting Room 7 (H) 

3:00 p.m. Marketing and Communications Committee Meeting—Greco Ballroom (H) 

3:20 p.m. Session Refreshment Break—West Exhibit Hall (CC) 

5:45 p.m. Magnetic Interfaces and Nanostructures Division Business Meeting—16 (CC) 

6:00 p.m. Poster Session and Refreshments—Central Exhibit Hall (CC) 

6:05 p.m. Electronic Materials and Processing Division Business Meeting—9 (CC) 

6:05 p.m. Nanometer-scale Science and Technology Business Meeting—12 (CC) 

6:05 p.m. Plasma Science and Technology Division Business Meeting—24 (CC) 

6:05 p.m Surface Science Division Business Meeting—22 (CC) 

6:05 p.m. Thin Film Division Business Meeting—11 (CC) 

6:20 p.m. Electronic Materials and Processing Division Forum: Moore’s Law and Careers at Intel—9 (CC) 

6:30 p.m. Chapter, Divisions, and Groups Committee Meeting and Dinner—IL Terrazzo Restaurant (H) 

6:30 p.m. Manufacturing Science and Technology Group Committee Meeting and Dinner—Meeting Room 7 (H) 

6:30 p.m. MEMS and NEMS Technical Group Executive Committee Meeting and Dinner—Meeting Room 1 (H) 

6:30 p.m. Magnetic Interfaces and Nanostructures Division Executive Committee Meeting and Dinner—Meeting Room 3 (H) 

6:30 p.m. Nanometer-scale Science and Technology Division Meeting and Dinner—Meeting Room 5 (H) 

7:00 p.m. Biomaterial Interfaces Division Executive Committee Meeting and Dinner and 

Biointerphases Editorial Board Meeting and Dinner—TBD (Offsite) 

7:00 p.m. Electronic Materials and Processing Division Executive Committee Meeting and Dinner—Meeting Room 2 (H) 

7:00 p.m. Plasma Science and Technology Executive Committee Meeting and Dinner—Meeting Room 6 (H) 

7:00 p.m. Surface Science Division Executive Committee Meeting and Dinner—Meeting Room 8 (H) 

7:00 p.m. Thin Film Division Executive Committee Meeting and Dinner—Meeting Room 4 (H) 

7:30 p.m. Applied Surface Science Division Business Meeting—Florida Ballroom I-III (H) 

8:00 p.m. ASTM E-42/ASSD Workshop, “XPS and Beyond: ISS, UPS, HIM, APT, and Other 

TLAs (Three Letter Acronyms)”—Florida Ballroom V (H) 


10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) 





TUESDAY SHORT COURSES 


8:30 a.m. Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS) 



8:30 a.m. Plasma Etching & RIE: Fundamentals 

8:30 am. Photolithography Process in IC Production 



101

Tuesday Morning, October 30, 2012 


Room: 6 - Session AC+EN-TuM 

Energetic Materials Issues for Nuclear Power: Fuels, 

Corrosion and Waste Disposal 

Moderator: J.G. Tobin, Lawrence Livermore National Laboratory 

8:00 am AC+EN-TuM1 Invited 

Novel Concepts for Enhanced Metallic Nuclear Fuel Performance, J.R. 

KENNEDY, R.D. MARIANI, D.L. PORTER, S.L. HAYES, H.J.M. CHICHESTER, Idaho 

National Laboratory, A.E. WRIGHT, Y.S. KIM, A.M. YACOUT, G.L. HOFMAN, Argonne 

National Laboratory, R.P. OMBERG, D.J. SENOR, Pacific Northwest National Laboratory 


8:40 am AC+EN-TuM3 Invited 

Low Temperature Oxidation of Plutonium: A Mott-Cabrera Mechanism, P. 

ROUSSEL, AWE, UK, A.J. NELSON, Lawrence Livermore National Laboratory 


Room: 20 - Session AS+BI-TuM 

Practical Surface Analysis 

Moderators: A. Belu, Medtronic, Inc., 

D.L. Pugmire, Los Alamos National Laboratory 

AS+BI-TuM1 Invited 

Clinical Application of Surface Analysis Technologies – Needs, 

Requirements and Challenges, J. SCHNEKENBURGER, Muenster University, 

Germany 

AS+BI-TuM3 The Application of XPS to the Study of Protein Lyophilizates, 

S.J. COULTAS, J.D.P. COUNSELL, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, 

Kratos Analytical Ltd, UK, R. GEIDOBLER, G. WINTER, Ludwig-Maximilians-University, 

Germany 

9:00 am Invited talk continued. AS+BI-TuM4 Characterization of Real-World Surfaces and Interfaces of 

Devices in the Biomedical Industry, W. THEILACKER, A. BELU, L. LOHSTRETER, 

L. LAGOO, Corporate Technology and Innovation, Medtronic, Inc. 

9:20 am AC+EN-TuM5 Investigation of “Blistering” of LEU-10Mo/Zr Reactor Foils, 

D.L. BLANCHARD, J.M. BILLING, M.R. SMOOT, M. PEREIRA, D.E. BURKES, Pacific 

Northwest National Laboratory 

9:40 am AC+EN-TuM6 The Sputtering Yields of Depleted Uranium and Uranium 

Carbide Bombarded and Alloyed by Either 30 keV Gallium or 16 keV 

Cesium Ions, W.J. SIEKHAUS, N.E. TESLICH, P.K. WEBER, Lawrence Livermore 


AS+BI-TuM5 Ageing Processes Occurring on Nanoscaled Aminated 

Surfaces as Observed by ToF-SIMS/PCA, NEXAFS Spectroscopy and 

XPS, W.E.S. UNGER, BAM Federal Inst. for Materials Res. and Testing, Germany, H. MIN, 

BAM Federal Inst. for Materials Res. and Testing and KAIST Korea, S. SWARAJ, BAM 

Federal Inst. for Materials Res. and Testing and Soleil Synchrotron France, P.-L. GIRARD- 

LAURIAULT, BAM Federal Inst. for Materials Res. and Testing and McGill Univ. Toronto, A. 

LIPPITZ, BAM Federal Inst. for Materials Res. and Testing, Germany 

AS+BI-TuM6 Signature Discovery in Explosives and Bioagents using 

Imaging Mass Spectrometry, C.M. MAHONEY, Pacific Northwest National Laboratory 

10:00 am BREAK - Complimentary Coffee in Exhibit Hall BREAK - Complimentary Coffee in Exhibit Hall 


10:40 am AC+EN-TuM9 Actinide Subsurface Chemistry in Waste Isolated Pilot Plant, 

Recent Development, M. BORKOWSKI, J.-F. LUCCHINI, M.K. RICHMANN, D.T. 

REED, Los Alamos National Laboratory 

11:00 am AC+EN-TuM10 XPS Study of Uranium Oxides with Various Precipitating 

Agents, K.S. HOLLIDAY, Lawrence Livermore National Laboratory, J. PLAUE, University 

of Nevada, Las Vegas, W.J. SIEKHAUS, A.J. NELSON, Lawrence Livermore National 

Laboratory 

11:20 am AC+EN-TuM11 Comparison by Ionic Transport Techniques between 

Europium/Terbium and Americium/Berkelium Trivalent Ions, H. LATROUS, 

Faculté des Sciences de Tunis – Tunisia, R. BESBES, Sfax Preparatory Engineering 

Institute, Tunisia 

AS+BI-TuM9 Topography and Field Effects in the Inner Side of Micro via 

Hole using ToF-SIMS, J.C. LEE, Y.K. KYOUNG, I.Y. SONG, Samsung Advanced 

Institute of Technology, Republic of Korea, S. IIDA, Ulvac Phi, Japan 

AS+BI-TuM10 Using XPS to Probe the Surface Chemistry of Ionic Liquids, 

J.D.P. COUNSELL, S.J. COULTAS, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, 

Kratos Analytical Ltd., UK 

AS+BI-TuM11 XPS Profiling and Work Function Mapping of a Damaged 

Solar Cell, B. STROHMEIER, Thermo Fisher Scientific, P. MACK, T.S. NUNNEY, J. 

WOLSTENHOLME, Thermo Fisher Scientific, UK 

11:40 am AS+BI-TuM12 Application of XPS Imaging Analysis in Understanding of 

Interfacial Delamination and Related Problems, H. PIAO, General Electric 

Global Research Center, N. FAIRLEY, Casa Software Ltd, UK, J. WALTON, The University 

of Manchester, UK 

102


Room: 23 - Session BI+SS+AS-TuM 


Biomolecules at Interfaces 

Moderator: P. Kingshott, Swinburne University of Technology, Australia 

8:00 am BI+SS+AS-TuM1 An Atomic Force Microscopy Based Method for the 

Determination of Protein Stability, O. CROAD, Univeristy of Nottingham, UK, S. 

RIGBY-SINGLETON, Molecular Profiles Ltd., UK, C.J. ROBERTS, D.J. SCOTT, P.M. 

WILLIAMS, S. ALLEN, University of Nottingham, UK 

8:20 am BI+SS+AS-TuM2 Computer Simulation of Water-Mediated Adhesion 

between Organic Surfaces, A.J. PERTSIN, M.H. GRUNZE, University of Heidelberg, 

Germany 

8:40 am BI+SS+AS-TuM3 Invited 

Adsorption from Saliva - Properties of Adsorbed Layers and Comparison 

with Other Systems, T. ARNEBRANT, L. LINDH, J. SOTRES, Malmö University, 

Sweden 


Room: 9 - Session EM-TuM 

Electrical Testing and Defects in III-V’s 

Moderators: E.M. Vogel, Georgia Institute of Technology, 

E.X. Zhang, Vanderbilt University 

EM-TuM1 Invited 

Characterization, Modeling and Control of Fermi Level Pinning 

Phenomena at III-V High-k MOS Gate Stack Interfaces, H. HASEGAWA, 

Hokkaido University and RIKEN, Japan 


EM-TuM3 An Investigation into the Origin of Anomalous Frequency 

Dispersion in Accumulation Capacitance of MOS Devices on III-V 

Substrates, R.V. GALATAGE, D.M. ZHERNOKLETOV, H. DONG, B. BRENNAN, C.L. 

HINKLE, R.M. WALLACE, University of Texas at Dallas, E.M. VOGEL, Georgia Institute of 

Technology 

9:00 am Invited talk continued. EM-TuM4 Evaluation of Atomic Layer Deposited High-k Dielectrics on 

GaAs, H.J. LIM, Y.J. CHOI, S.H. LEE, Seoul National University, Republic of Korea, J.H. 

KU, N.I. LEE, Samsung Electronics Co. Ltd., Republic of Korea, H.J. KIM, Seoul National 

University, Republic of Korea 

9:20 am BI+SS+AS-TuM5 Zwitterionic Polymer Brushes with Clickable Functionality 

for Specific Binding and Nonspecific Repulsion, S. CALDER, H. ZUILHOF, 

Wageningen University, Netherlands 

9:40 am BI+SS+AS-TuM6 Von Willebrand Factor A1 Domain Structure and Function 

Changes on Surfaces, E. TRONIC, W. THOMAS, D.G. CASTNER, University of 

Washington 


High Energy XPS and Electrical Characterisation Studies of Metal Oxide 

Semiconductor Structures on Si, GaAs and InGaAs, G.J. HUGHES, L.A. 

WALSH, Dublin City University, Ireland, P.K. HURLEY, J.H. LIN, Tyndall National Laboratory, 

Ireland, J.C. WOICIK, National Institute of Standards and Technology 




10:40 am BI+SS+AS-TuM9 Invited 

Combining Catalysis and Self-Assembly: Towards Evolvable Soft Matter, 

R. ULIJN, University of Strathclyde, UK 

EM-TuM9 Metastable Centers and Localized States in AlGaN/AlN/GaN 

Heterostructures Studied by C-V, Admittance Spectroscopy, and DLTS, 

A.Y. POLYAKOV, N.B. SMIRNOV, A.V. GOVORKOV, E.A. KOZHUKHOVA, Institute of Rare 

Metals, Russian Federation, S.J. PEARTON, F. REN, L. LU, University of Florida, S.Y. 

KARPOV, Soft-Impact, Ltd, Russian Federation, W. LIM, Samsung LED, Republic of Korea 

11:00 am Invited talk continued. EM-TuM10 Characterizations of Proton-irradiated GaN and 4H-SiC by 

KOH Etching, H.-Y. KIM, Korea University, Y.J. SHIN, W. BAHNG, Korea 

Electrotechnology Research Institute, J. KIM, Korea University 

11:20 am BI+SS+AS-TuM11 Bio/Nano Interfaces of De Novo Design: Small Proteins 

with Large Potential, M.G. RYADNOV, National Physical Laboratory, UK 

11:40 am BI+SS+AS-TuM12 Application of CD and SRCD Techniques to the Study of 

Protein/Nanoparticle Complexes, G. CECCONE, S. LAERA, L. CALZOLAI, D. 

GILLILAND, EC-JRC-IHCP, Italy, R. HUSSEIN, G. SILIGARDI, Diamond Light Source, UK, 

F. ROSSI, EC-JRC-IHCP, Italy 

103 


Trapping Centers in High -k Dielectrics for MOS Devices, P. LENAHAN, 

Pennsylvania State University 

Invited talk continued.


Room: 15 - Session EN+TF-TuM 

Chalcogenide Solar Cells II 

Moderator: H.W. Hillhouse, University of Washington 

8:00 am EN+TF-TuM1 Invited 

Thin Film Solar Cells: Present Status and Future Prospects, C.S. 

FEREKIDES, University of South Florida 



Materials and Process Options for Cu(InGa)Se2 Thin Film Solar Cells, 

W.N. SHAFARMAN, University of Delaware 



Why Are We Making CIGS Solar Cells from Cu-poor Material?, S. 

SIEBENTRITT, University of Luxembourg 




Room: West Hall - Session EW-TuM 


Moderator: D. Surman, Kratos Analytical Inc. 

10:00 am BREAK - Complimentary Coffee in Exhibit Hall EW-TuM7 ORION Nanofab: Fabricating sub 10 nm Nanostructures using 

the Helium Ion Microscope, D. ELSWICK, Carl Zeiss 

10:20 am BREAK - Complimentary Coffee in Exhibit Hall EW-TuM8 AM-FM and Loss Tangent Imaging–Two New Tools for 

Quantitative Nanomechanical Properties, R. PROKSCH, I. REVENKO, S. 

HOHLBAUCH, J. CLEVELAND, N. GEISSE, A. MOSHAR, J. BEMIS, C. CALLAHAN, K. 

JONES, Asylum Research 

10:40 am EN+TF-TuM9 ZnxCd1-xS Thin Films for Chalcopyrite Solar Cells Deposited 

through Batch and Continuous-Flow Chemical Bath Deposition, B.S. 

TOSUN, C. PETTIT, S.A. CAMPBELL, E.S. AYDIL, University of Minnesota 

11:00 am EN+TF-TuM10 Selenization of Cu-Ga-In Precursors for Synthesis of CIGS 

Absorbers: Equilibrium and Kinetic Studies, C. MUZZILLO, R. KRISHNAN, 

University of Florida, W.K. KIM, Yeungnam University, Republic of Korea, E.A. PAYZANT, 

Oak Ridge National Laboratory, Y.H. SOHN, B. YAO, University of Central Florida, J. SHEN, 

General Research Institute for Non-ferrous Metals of Beijing, China, C. CAMPBELL, National 

Institute of Standards and Technology, T.J. ANDERSON, University of Florida 

11:20 am EN+TF-TuM11 Fabrication of CuIn1-xGaXS2 Thin-Film Solar Cells on Single 

Layer Molybdenum, A. KAUL, E. SCHNELLER, N. SHIRADKAR, S. PETHE, N. 

DHERE, Florida Solar Energy Center, University of Central Florida 

11:40 am EN+TF-TuM12 Investigation of Elemental Composition for Cu(InGa)Se2 

Thin Films by Various Analytical Techniques, J.H. LEE, S.H. KIM, J.-H. YOON, 

S.-O. WON, Y.H. LEE, Korea Institute of Science and Technology, Republic of Korea 

104



Room: 13 - Session GR+AS+EM+MI+MN-TuM 

Optical, Magnetic, Mechanical and Thermal Properties 

Moderator: K.I. Bolotin, Vanderbilt University 

8:00 am GR+AS+EM+MI+MN-TuM1 Characterization of Magnetically Tunable Iron 

Nanorod Coated Graphene Nanoplatelets, S.D. JOHNSON, M.H. GOWDA, S.-F. 

CHENG, N.Y. GARCES, B. FEIGELSON, F.J. KUB, C.R. EDDY, JR., U.S. Naval Research 

Laboratory 

8:20 am GR+AS+EM+MI+MN-TuM2 Dynamical Origin of Blue Photoluminescence 

from Graphene Oxide, A.L. EXARHOS, M.E. TURK, P.M. VORA, J.M. KIKKAWA, 

University of Pennsylvania 

8:40 am GR+AS+EM+MI+MN-TuM3 Invited 

Spin-Transport and Magnetism in Graphene, R. KAWAKAMI, University of 

California, Riverside 


Room: 7 - Session IS+AS+SS+EN-TuM 

In Situ Spectroscopic Studies of Catalysis and Gas-Solid 

Reactions 

Moderator: B. Roldan Cuenya, University of Central Florida 

IS+AS+SS+EN-TuM1 Invited 

Ambient Pressure XPS for Alternative Energy Research and 

Environmental Science, H. BLUHM, Lawrence Berkeley National Laboratory 


IS+AS+SS+EN-TuM3 In Situ Soft X-ray Photon-in/Photon-out Spectroscopy 

of Photo-electrochemical Reactions of Hematite in Water Splitting, J.H. 

GUO, Lawrence Berkeley National Laboratory, A. BRAUN, Empa, Swiss Federal 

Laboratories for Materials Science and Technology, K. SIVULA, Ecole Polytechnique 

Fédérale de Lausanne (EPFL), Switzerland, D. BORA, Lawrence Berkeley National 

Laboratory, J.-H. ZHU, L. ZHANG, University of Science and Technology of China, M. 

GRÄTZEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, E.C. 

CONSTABLE, University of Basel, Swtizerland 

9:00 am Invited talk continued. IS+AS+SS+EN-TuM4 XANES and Ambient Pressure XPS (APXPS) Study: 

Investigations of the Local Structure and Final-State Effect in Partially 

Reduced SnOx Nanoislands on Pt(111), S. AXNANDA, Z. LIU, B. MAO, 

Lawrence Berkeley National Laboratory 


Probing Few-Layer Graphene by Optical Spectroscopy, T.F. HEINZ, 

Columbia University 

IS+AS+SS+EN-TuM5 Epitaxial Strontium Substituted Lanthanum Cobalt 

Oxides Investigated using In Situ Ambient Pressure X-ray Photoelectron 

Spectroscopy Near Operating Conditions Under Applied Potentials, E. 

CRUMLIN, E. MUTORO, Massachusetts Institute of Tech., Z. LIU, Lawrence Berkeley 

National Lab, M.D. BIEGALSKI, Oak Ridge National Lab, W.T. HONG, Massachusetts 

Institute of Tech., H.M. CHRISTEN, Oak Ridge National Lab, H. BLUHM, Lawrence Berkeley 

National Lab, Y. SHAO-HORN, Massachusetts Institute of Tech. 

9:40 am Invited talk continued. IS+AS+SS+EN-TuM6 Probing Nitrogen and Metal Speciation in Non- 

Platinum Electrocatalysts by Ambient Pressure X-ray Photoelectron 

Spectroscopies and DFT Calculations, K. ARTYUSHKOVA, B. HALEVI, A. 

SEROV, The University of New Mexico, B. KIEFER, New Mexico State University, P. 

ATANASSOV, The University of New Mexico 



10:40 am GR+AS+EM+MI+MN-TuM9 A “How To” for Magnetic Carbon, H. OHLDAG, SLAC 

National Accelerator Laboratory, E. ARENHOLZ, T. TYLISZCZAK, Lawrence Berkeley 

National Laboratory, D. SPEMANN, R. HOEHNE, P. ESQUINAZI, M. UNGURENEAU, T. 

BUTZ, University of Leipzig, Germany 

11:00 am GR+AS+EM+MI+MN-TuM10 From Graphene to Amorphous Carbon by 

Sublimation and Condensation, B. STEELE, R. PERRIOT, V. ZHAKHOVSKY, I.I. 

OLEYNIK, University of South Florida 


Graphene Mechanics and NEMS Applications, J.C. HONE, Columbia University 

IS+AS+SS+EN-TuM9 Resolving Growth of Palladium Nanocatalysts Using 

In Situ FT-IR, XAS and PDF under Practical Atomic Layer Deposition 

Conditions, Y. LEI, J. LU, B. LIU, H. ZHAO, J. GREELEY, P. CHUPAS, J. MILLER, J.W. 

ELAM, Argonne National Laboratory 

IS+AS+SS+EN-TuM10 Invited 

Catalyst Characterization using In Situ XAS and XPS: From 

Nanoparticles Synthesis to Evolution of Structural/Electronic Properties 

under Reaction Conditions, A.M. KARIM, Pacific Northwest National Laboratory 


11:40 am Invited talk continued. IS+AS+SS+EN-TuM12 In Situ Study of the Oxidation of CO over Ir(111), J. 

KNUDSEN, Lund University, Sweden, Y. MONYA, Keio University, Japan, J. SCHNADT, 

M.A. ARMAN, E. GRÅNÄS, Lund University, Sweden, H. KONDOH, Keio University, Japan, 

J.N. ANDERSEN, Lund University, Sweden 

105

MEMS and NEMS 

Room: 10 - Session MN-TuM 

Optomechanics and Photonic MEMS and NEMS 

Moderator: W.K. Hiebert, University of Alberta and The National 

Institute for Nanotechnology 

8:00 am MN-TuM1 Invited 

Optical Actuation of Photonic Crystal Nanocavities and Membranes, M. 

LONCAR, Harvard University 


8:40 am MN-TuM3 Invited 

Focused Ion Beam Fabrication for Nanophotonics and Microsystems 

Integration, I.W. JUNG, Argonne National Laboratory 


Room: 16 - Session NM+MS-TuM 

All Invited Session: Challenges of Nanomanufacturing from 

an Industrial Perspective 

Moderators: S. Butler, Texas Instruments, 

B.R. Rogers, Vanderbilt University 

NM+MS-TuM1 Invited 

Challenges of Nanomanufacturing from an Industrial Perspective, A. 

SEKIGUCHI, Tokyo Electron Limited 

9:00 am Invited talk continued. NM+MS-TuM4 Invited 

PRINT® Nanomanufacturing Technology-Precisely Engineered Particles 

for Life Science Applications, M. HUNTER, Liquidia Technologies, INC. 

9:20 am MN-TuM5 Nanomechanical Resonator Detection using Racetrack 

Resonator Structures for Use in Mass Sensing, V.T.K. SAUER, Z. DIAO, M.R. 

FREEMAN, W.K. HIEBERT, University of Alberta and The National Institute for 

Nanotechnology, Canada 

9:40 am MN-TuM6 Fabrication and Characterization of Ultra-Fast Electrostatically- 

Actuated Surface Micro-Machined Aluminum Mirrors, J.R. FOX, A.D. 

MATHIAS, J.P. CORTES, M.S. ALLEN, S.B. HOROWITZ, Ducommun Miltec, M.G. 

TEMMEN, M. SANGHADASA, U.S. Army Aviation and Missile Research Development and 

Engineering Center 




10:40 am MN-TuM9 A Comparison of Different Releasing Methods in Fabricating 

Nano-Optomechanical Devices, Z. DIAO, National Institute for Nanotechnology, 

NRC Canada and University of Alberta, Canada, V.T.K. SAUER, J.E. LOSBY, M.R. KAN, 

M.R. FREEMAN, University of Alberta and The National Institute for Nanotechnology, 

Canada, W.K. HIEBERT, National Institute for Nanotechnology, NRC Canada and University 

of Alberta, Canada 

11:00 am MN-TuM10 Optomechanical Experiments with Large Area Graphene 

Membranes, V.P. ADIGA, R.A. BARTON, I.R. STORCH, B.R. ILIC, C.B. WALLIN, P.L. 

MCEUEN, J.M. PARPIA, H.G. CRAIGHEAD, Cornell University 

11:20 am MN-TuM11 Optomechanics of Graphene Resonators, R.A. BARTON, I.R. 

STORCH, V.P. ADIGA, R. SAKAKIBARA, B.R. CIPRIANY, B.R. ILIC, S. WANG, P. ONG, 

P.L. MCEUEN, J.M. PARPIA, H.G. CRAIGHEAD, Cornell University 

11:40 am 


106 

NM+MS-TuM9 Invited 

High Productivity Combinatorial R&D Technologies for Cost-Effective 

Nanomanufacturing, D. LAZOVSKY, Intermolecular, Inc. 



Room: 12 - Session NS+EN-TuM 


One-Dimensional Nanowires and Nanotubes 

Moderator: M.C. Hersam, Northwestern University 

8:00 am NS+EN-TuM1 Direct Observation of Selective Band Engineering of an 

Isolated Subnanometer Wire, I. SONG, D.-H. OH, C.-Y. PARK, J.R. AHN, 

Sungkyunkwan University, Republic of Korea 

8:20 am NS+EN-TuM2 Growth of ZnO Nanowires on Retroreflector Microspheres 

and the Resulting Plasmonic Light Channeling Properties, S.M. PROKES, 

O.J. GEMBOCKI, E. CLEVELAND, Naval Research Laboratory 

8:40 am NS+EN-TuM3 Optical and Electrical Characteristics of Al-doped ZnO 

Nanowires Grown by Chemical Vapor Deposition, G. SHEN, N. DAWAHRE, J. 

WATERS, J. KRAFCIK, S.M. KIM, P. KUNG, University of Alabama, Tuscaloosa 

9:00 am NS+EN-TuM4 Rational Defect Engineering in Silicon Nanowires, N. SHIN, M. 

FILLER, Georgia Institute of Technology 

9:20 am NS+EN-TuM5 Ultrafast Carrier Dynamics of Si Nanowires Grown by 

LPCVD, A. SEYHAN, Tokyo Institute of Technology and Nigde University, Turkey Japan, 

T. ISHIKAWA, S. KOSHIHARA, M. SIMANULLANG, K. USAMI, S. ODA, Tokyo Institute of 

Technology, Japan 

9:40 am NS+EN-TuM6 Selective Deposition of Germanium Nanowire Segments via 

a Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth Method, C.J. 

HAWLEY, T. MCGUCKIN, J.E. SPANIER, Drexel University 


Room: 24 - Session PS1-TuM 

Plasma Diagnostics, Sensors and Control 1 

Moderator: V. Nagorny, Mattson Technology 

PS1-TuM1 Invited 

Monitoring Plasma Etch Processes with Wave Cut-Off, Langmuir, and 

Radio-Frequency Probes, M.A. SOBOLEWSKI, National Institute of Standards and 

Technology (NIST) 


PS1-TuM3 Impact of Self-Absorption on Emission Spectral Lines for Non- 

Equilibrium Plasma Source, E. GUDIMENKO, V. MILOSAVLJEVIC, S. DANIELS, 

Dublin City University, Ireland 

PS1-TuM4 Real-Time Plasma Deposition Thickness Control using In Situ 

Optical Emission Interferometry, D.J. JOHNSON, K.D. MACKENZIE, C.W. 

JOHNSON, L. MARTINEZ, Plasma-Therm LLC 

PS1-TuM5 Subsequent Temporal Change of Gaseous H and N Radical 

Density in Plasma after Different Processes, T. SUZUKI, A. MALINOWSKI, K. 

TAKEDA, H. KONDO, K. ISHIKAWA, Nagoya University, Japan, Y. SETSUHARA, Osaka 

University, Japan, M. SHIRATANI, Kyushu University, Japan, M. SEKINE, M. HORI, Nagoya 




10:40 am NS+EN-TuM9 Invited 

Electronics and Opto-Electronics with Semiconducting Carbon Nanotube 

Arrays, M.B. STEINER, IBM TJ Watson Research Center 

PS1-TuM9 Experimental Implementation of Real-time Multivariable 

Control of a Capacitively Coupled Plasma, Y. ZHANG, B.J. KEVILLE, C. 

GAMAN, A. HOLOHAN, M. TURNER, S. DANIELS, Dublin City University, Ireland 

11:00 am Invited talk continued. PS1-TuM10 Multivariable Control of a Capacitively Coupled Plasma, B.J. 

KEVILLE, Y. ZHANG, M. TURNER, Dublin City University, Ireland 

11:20 am NS+EN-TuM11 Observation of the Impact of Pseudospin Conservation in 

Carbon Nanotubes, R. TSUCHIKAWA, University of Central Florida, Z. ZHANG, X. 

GUO, J.C. HONE, Columbia University, M. ISHIGAMI, University of Central Florida 

11:40 am NS+EN-TuM12 Properties and Application of Electronically Monodisperse 

Carbon Nanomaterials Functionalized with Nonionic Block Copolymers, 

J.-W.T. SEO, Northwestern University 

107 

PS1-TuM11 Single and Multi-Point Ion Energy Distributions in a VHF+RF 

Commercial Reactor Measured by Novel In-Wafer Ion Energy Analyzer, 

B.G. LANE, M. FUNK, L. CHEN, R. SUNDARARAJAN, J. ZHAO, Tokyo Electron America 

PS1-TuM12 Characterizing Electron Beam Generated Plasmas for Plasma 

Processing Applications, D.R. BORIS, R. FERNSLER, S.G. WALTON, Naval 

Research Laboratory


Room: 25 - Session PS2-TuM 

Advanced FEOL/Gate Etching 2 

Moderator: J.P. Chang, University of California at Los Angeles 

8:00 am PS2-TuM1 Gate-Silicon Etching using Evanescent Microwave Plasma for 

22nm Technology Node and Beyond, A. RANJAN, S. VORONIN, H. KINTAKA, K. 

KUMAR, P. BIOLSI, Tokyo Electron Technology Center, America, LLC, R. JUNG, S. 

KANAKASABAPATHY, International Business Machines – Research Group, A. BANIK, IBM 

T.J. Watson Research Center 

8:20 am PS2-TuM2 Tracking Line Width Roughness Improvement during Gate 

Plasma Patterning, L. VALLIER, E. PARGON, CNRS, France, N. POSSEME, CEA, 

LETI, MINATEC Campus, France, L. AZARNOUCHE, CNRS, France, S.D. NEMANI, C. 

ROSSLEE, T. PHAM, Applied Materials Inc. 

8:40 am PS2-TuM3 Invited 

Plasma Prize Talk: Grand Challenges in Etch, R. GOTTSCHO*, Lam Research 


Room: 22 - Session SE+PS-TuM 

Pulsed Plasmas in Surface Engineering 

Moderator: C. Mitterer, University of Leoben, Austria 

SE+PS-TuM1 Invited 

Strong Localization of Ionization in High Power Impulse Magnetron 

Sputtering in Reactive and Non-Reactive Gas Environments, A. ANDERS, 



SE+PS-TuM3 The Magnetic Field Configuration’s Effect on Plasma 

Parameters in High-Power Pulsed Magnetron Sputtering, H. YU, L. MENG, 

P. RAMAN, T.S. CHO, D.N. RUZIC, University of Illinois at Urbana Champaign 

9:00 am Invited talk continued. SE+PS-TuM4 Plasma Generation and Transport in High-Power Pulsed 

Magnetron Sputtering, L. MENG, H. YU, T.S. CHO, D.N. RUZIC, University of Illinois at 

Urbana Champaign 

9:20 am PS2-TuM5 Spacer Patterning for Trigate SOI Devices, S. BARNOLA, P. 

PIMENTA-BARROS, L. DESVOIVRES, J. PRADELLES, S. BARRAUD, CEA, LETI, 

MINATEC Campus, France 

9:40 am PS2-TuM6 Key Challenges in FinFET FEOL RIE Processing at the 14nm 

CMOS Node and Beyond, R.M. MARTIN, A. BANIK, J. CHANG, R. JUNG, S. 

KANAKASABAPATHY, M. KOBAYASHI, Q. LIN, B.G. MORRIS, S.C. SEO, T. STANDAERT, 

K. STEIN, R. SREENIVASAN, H. WANG, M. YANG, Q. YANG, Y. YIN, IBM Corporation, 

D.H. CHOI, R. KAMBHAMPATI, T. KWON, GLOBALFOUNDRIES 

SE+PS-TuM5 Metallic Film Modification through the Use of Non-standard 

HiPIMS Waveforms, P.M. BARKER, E. LEWIN, J. PATSCHEIDER, EMPA, Switzerland 

SE+PS-TuM6 HIPIMS Arc Free Reactive Sputtering of Non-Conductive 

and Conductive Films, R. CHISTYAKOV, B. ABRAHAM, Zond Inc/Zpulser LLC 



10:40 am PS2-TuM9 Patterning Options for 14nm Node and Beyond, Y. YIN, R. JUNG, 

F. LIE, M. BEARD, B.G. MORRIS, M. HARTIG, S. KANAKASABAPATHY, IBM Res. at 

Albany Nanotech, Y. MIGNOT, STMicroelectronics, Y. XU, C. KOAY, IBM Res. at Albany 

Nanotech, L. JANG, GLOBALFOUNDRIES, N. SAULNIER, J. ABDALLAH, H. CHEN, IBM 

Res. at Albany Nanotech, M. TAGAMI, Renesas Electonics, K. AKARVARDAR, S. 

AKARVARDAR, GLOBALFOUNDRIES, J. ARNOLD, T. SPOONER, M. COLBURN, IBM Res. 

at Albany Nanotech 

11:00 am PS2-TuM10 High-Efficiency Downstream Plasma Processes, L. DIAO, R. 

ELLISTON, A. KADAVANICH, C. LEE, V. NAGORNY, H. PHANVU, O. TODOR, V. 

VANIAPURA, Mattson Technology 

11:20 am PS2-TuM11 Challenges for Sub 20nm STI Etch, H. ZHOU, X. JI, S. SRINIVASAN, 

J. HE, X. HUA, D. HEO, J. CHOI, A. KHAN, A. AGARWAL, S. RAUF, Applied Materials Inc. 

11:40 am PS2-TuM12 High Resolution Pattern Transfer for sub 30 nm Technology 

Nodes by Introduction of an Advanced Dual Hard Mask Stack, J. PAUL, M. 

RUDOLPH, S. RIEDEL, X. THRUN, C. HOHLE, Fraunhofer Center Nanoelectronic 

Technologies (CNT), Germany, S. WEGE, Plasway, Germany 

* 2011 Plasma Prize Winner 


108 

SE+PS-TuM9 Reactive Modulated Pulse Power Magnetron Sputtering of 

Molybdenum Oxides: Optical Behavior as a Function of Process 

Parameters, N.R. MURPHY, Air Force Research Laboratory, L. SUN, General Dynamics 

Information Technology, J.T. GRANT, University of Dayton Research Institute, J.G. JONES, 

R. JAKUBIAK, Air Force Research Laboratory 

SE+PS-TuM10 Cathodic Arc Plasma of AlCr Composite Cathodes in Inert 

and Reactive Atmospheres, R. FRANZ, J. WALLIG, Lawrence Berkeley National 

Laboratory, P. POLCIK, PLANSEE Composite Materials GmbH, Germany, A. ANDERS, 

Lawrence Berkeley National Laboratory


Room: 21 - Session SS-TuM 

Surface Reactivity of Oxides 

Moderator: A.L. Utz, Tufts University 

8:00 am SS-TuM1 Invited 

Preparation, Characterization and Catalytic Activity of Model WO3 

Catalysts, Z. DOHNALEK, Pacific Northwest National Laboratory 



8:40 am SS-TuM3 EUV Photon Enhanced Oxidation of Carbonaceous Layer at a 

TiO2 Film Surface, N.S. FARADZHEV, J.T. YATES, JR., University of Virginia, S.B. 

HILL, T.B. LUCATORTO, National Institute of Standards and Technology 

9:00 am SS-TuM4 Reactions of Water with Vacuum Fracture Surfaces of Sodium- 

Aluminosilicate Glass: Effects of Composition on Reactivity, K. ADIB, J.E. 

DICKINSON, Corning Incorporated 

9:20 am SS-TuM5 Reactivity of Highly-hydroxylated TiO2(110) Surface Prepared 

via Carboxylic Acid Adsorption and Photolysis, I. LYUBINETSKY, Y.G. DU, 

N.G. PETRIK, Pacific Northwest National Laboratory, N.A. DESKINS, Worcester Polytechnic 

Institute, Z.-T. WANG, M.A. HENDERSON, G.A. KIMMEL, Pacific Northwest National 

Laboratory 

9:40 am SS-TuM6 Infrared Spectroscopy of CO2 Adsorbed on TiO2(110), N.G. 

PETRIK, G.A. KIMMEL, Pacific Northwest National Laboratory 

Thin Film 

Room: 11 - Session TF-TuM 

ALD Reactions and Film Properties 

Moderator: H. Kim, Yonsei University, Korea 

TF-TuM3 Invited 

Growth Simulations for Atomic Layer Deposition: Adsorption, Elimination 

and Densification Reactions, S. ELLIOTT, M. SHIRAZI, Tyndall National Institute, 

Ireland 


TF-TuM5 Optimization of Properties of Al-doped ZnO Films Deposited by 

Atomic Layer Deposition, Y. WU, P.M. HERMKENS, B.W.H. VAN DE LOO, H.C.M. 

KNOOPS, F. ROOZEBOOM, W.M.M. KESSELS, Eindhoven University of Technology, the 

Netherlands 

TF-TuM6 Growth Inhibition of Al2O3 on InGaAs by Atomic Layer 

Deposition, B. GRANADOS, A.J. MUSCAT, University of Arizona 



10:40 am SS-TuM9 Low-temperature Dissociation of CO2 on Ni/CeO2/Ru(0001) 

Model Catalyst, D.D. KONG, University of Science and Technology of China, K.-H. 

ERNST, EMPA, Switzerland, J.-H. ZHU, University of Science and Technology of China 

11:00 am SS-TuM10 Adsorption and Diffusion of Acetone on Rutile TiO2 (110), B. 

ZHANG, Y. XIA, Baylor University, J. YE, Q. GE, Southern Illinois University Carbondale, Z. 

ZHANG, Baylor University 

11:20 am SS-TuM11 Variations in Reactivity for Acetaldehyde and Acetic Acid with 

the Crystallographic Orientation of Cerium Oxide Thin Films, P.M. 

ALBRECHT, D.R. MULLINS, Oak Ridge National Laboratory 

11:40 am SS-TuM12 The Entropies of Adsorbed Molecules, C.T. CAMPBELL, J.R.V. 

SELLERS, University of Washington 

109 

TF-TuM9 Nanoindentation and Flexure Related Effects Due to Reactive 

Subsurface Growth of Atomic Layer Deposition Aluminum Oxide on 

Polyamide-6, Y. SUN, North Carolina State University, M.P. GOERTZ, J.A. PALMER, 

Sandia National Laboratories, R.P. PADBURY, J.S. JUR, North Carolina State University 

TF-TuM10 The Importance of Oxygen-Induced Ripening in the Nucleation 

of Platinum Atomic Layer Deposition, A.J.M. MACKUS, M.A. VERHEIJEN, N. 

LEICK, W.M.M. KESSELS, Eindhoven University of Technology, Netherlands 

TF-TuM11 Plasma Assisted Atomic Layer Deposition of Pt and PtOx in 

High Aspect Ratio 3D Structures, I.J.M. ERKENS, M.A. VERHEIJEN, F. 

ROOZEBOOM, W.M.M. KESSELS, Eindhoven University of Technology, Netherlands


Room: 19 - Session TR+BI-TuM 

Self Healing Coatings, Bio-Inspired Design, and Frictional 

Properties of Biological Materials 

Moderators: D. Irving, North Carolina State University, 

M.O. Robbins, Johns Hopkins University 

8:00 am TR+BI-TuM1 Effects of Substrate Surface Energy and Roughness in 

Fibrillar Friction, Y. KIM, D.H. LEE, F. LIMANTO, R. CLAUS, R.S. FEARING, R. 

MABOUDIAN, University of California Berkeley 

8:20 am TR+BI-TuM2 Invited 

Friction at Hydrogel Contact Lens Surfaces, S.S. PERRY, S. HUO, A. RUDY, 



Room: 14 - Session VT-TuM 

Pumping, Gas Dynamics and Modeling 

Moderator: L. Wang, Los Alamos National Laboratory 

VT-TuM1 Invited 

Gas Dynamics Modelling for Particle Accelerators, O.B. MALYSHEV, STFC 

Daresbury Laboratory, UK 


8:40 am Invited talk continued. VT-TuM3 Transient Flow of Rarefied Gas through a Short Tube, F. 

SHARIPOV, Federal University of Parana, Brazil 

9:00 am TR+BI-TuM4 Linking Cartilage Structure, Lubrication, and Osteoarthritis, 

D.L. BURRIS, University of Delaware 


Self Healing Materials: A New Approach to Make Materials Perform 

More Reliably under Harsh Conditions, S. VAN DER ZWAAG, M. VALEFI, S. 

GARCIA, M.R. DE ROOIJ, Delft University of Technology and University of Twente, the 

Netherlands 



VT-TuM4 Experimental Results and Direct Simulation Monte Carlo 

Modelling of a High-Performance Large-Scale Cryopump, S. VAROUTIS, 

CHR. DAY, X. LUO, H. HAAS, Karlsruhe Institute of Technology, Germany, F. SHARIPOV, 

Federal University of Parana, Brazil 

VT-TuM5 Development of a PhD-level course in Vacuum Science and 

Technology, P. EKLUND, Linköping University, Sweden 



10:40 am TR+BI-TuM9 Surface Analytical and Tribological Characterization of 

Diamonlike Boundary Films Extracted from Base Mineral and Synthetic 

Oils, A. ERDEMIR, O.L. ERYILMAZ, Argonne National Laboratory 

11:00 am TR+BI-TuM10 Data-driven Model for Estimation of Friction Coefficient via 

Informatics Methods, E.W. BUCHOLZ, University of Florida, C.S. KONG, Iowa State 

University, K.R. MARCHMAN, F.-Y. LIN, W.G. SAWYER, S.R. PHILLPOT, University of 

Florida, K. RAJAN, Iowa State University, S.B. SINNOTT, University of Florida 


Structure, Lateral Flow, and Self-Healing of a Bound-and-Mobile 

Lubricant Film, S.H. KIM, Pennsylvania State University 

VT-TuM9 A Comparison between Numerical and Analytical Models of 

Turbomolecular Drag Pump’s Stages, I.F. COZZA, Agilent Technologies, Italy, M. 

ROSE, PI-DSMC, Germany, R. ARPA, H. TELIB, Optimad Engineering S.R.L., Italy 

VT-TuM10 Improved Modelling and Measurement of the Rotor 

Temperature of Turbo-Molecular Pumps in Magnetic Fields, A. JANSEN, 

KIT, IEKP, Germany, N. KERNERT, KIT, IKP, Germany, J. WOLF, KIT, IEKP, Germany 

VT-TuM11 Test of Temperature-Dependent NEG Activation and Stability 

of Gold-Plating in the KATRIN Experiment, W. GIL, L. BORNSCHEIN, J. WOLF, 

Karlsruhe Institute of Technology, Germany 

11:40 am Invited talk continued. VT-TuM12 Improving the Pump Down of UHV Systems by the Additional 

Pumping Speed Provided by NEG Pumps, F. SIVIERO, A. BONUCCI, A. 

CONTE, L. CARUSO, L. VIALE, P. MANINI, SAES Getters, Italy 

110


Room: West Hall - Session EW-TuL 

Tuesday Lunch, October 30, 2012 



12:00 pm EW-TuL1 Selecting the Best Metrology Method for Monitoring Thin Film 

Deposition, T. BALLINGER, Bruker Nano 

12:20 pm EW-TuL2 Complementary Nature of XPS and Raman Techniques, R. 

KERSHNER, T. NUNNEY, Thermo Fisher Scientific 

12:40 pm EW-TuL3 Multi-Dimensional XPS Profiling from Thermo Fisher Scientific, 

A. BUSHELL, R.G. WHITE, T.S. NUNNEY, P. MACK, A.E. WRIGHT, Thermo Fisher 

Scientific, UK 

1:00 pm EW-TuL4 Organic Depth Profiling using XPS – Pro’s and Con’s of 

Different Polyatomic Species, C. BLOMFIELD, S. HUTTON, Kratos Analytical Ltd, 

UK, D. SURMAN, Kratos Analytical Inc. 

1:20 pm EW-TuL5 What's New from Physical Electronics, J.F. MOULDER, Physical 

Electronics 

1:40 pm EW-TuL6 KolibriSensor and Tyto: New Milestones in Scanning Probe 

Microscopy, T. HÄNKE, Y. DEDKOV, A. PIODA, T. KAMPEN, A. THISSEN, SPECS 

Surface Nano Analysis GmbH, Germany 

111

NOTES 

112

Tuesday Afternoon, October 30, 2012 


Room: 20 - Session AS+BI-TuA 

Surface Analysis of Materials Using Vibrational Techniques 

(2:00-3:20 pm)/ 

Multi-Technique Analysis (4:00-6:00 pm) 

Moderators: D. Roy, National Physical Laboratory, UK, 

C. Szakal, National Institute of Standards and Technology 

2:00 pm AS+BI-TuA1 Vibrational Spectrum and Stability of the Long-Debated 

Models for the (√7×√7)R19° Phase of S/Cu(111), M. ALCANTARA 

ORTIGOZA, M. AMINPOUR, T.S. RAHMAN, University of Central Florida 

2:20 pm AS+BI-TuA2 Vibrational Spectroscopy Study of Low-k/Ultra-low-k 

Materials on Patterned Wafers, H. TAN, J.C.K. LAM, M.Y.M. HUANG, F. ZHANG, 

Globalfoundries Singapore Pte Ltd, Singapore, H.D. SUN, Z.X. SHEN, Nanyang 

Technological University, Singapore, Z.H. MAI, Globalfoundries Singapore Pte Ltd, 

Singapore 

2:40 pm AS+BI-TuA3 First-principle Investigation of the Stability and Vibrational 

Spectrum of MoSx Nanostructures Grown on Cu(111), M. AMINPOUR, M. 

ALCÁNTARA ORTIGOZA, T.S. RAHMAN, University of Central Florida 

3:00 pm AS+BI-TuA4 UV-Raman Microscopy on the Analysis of Ultra-Low-k 

Dielectric in Multilayer IC Devices, Y.M. HUANG, J.C.K. LAM, T.H. NG, D.D. 

WANG, Z.H. MAI, Globalfoundries Singapore Pte Ltd, H.D. SUN, Z.X. SHEN, Nanyang 

Technological University, Singapore 



4:00 pm AS+BI-TuA7 Invited 

Visualizing Cells and Viruses at Molecular Resolution: Progress, 

Challenges and Future Prospects, S. SUBRAMANIAM, National Cancer Institute, 

NIH 


Room: 23 - Session BI+AS-TuA 

Characterization of Biointerfaces 

Moderator: L. Meagher, CSIRO Materials Science and Engineering, 

Australia 

BI+AS-TuA1 Invited 

Surface Characterization Meets Cells and Proteins, B.D. RATNER, University 

of Washington 


BI+AS-TuA3 Using Binary Solvent Mixtures Produces High Graft Density 

Poly (Ethylene Glycol) Layers, A.R. ARCOT, Aalto University, Finland, S. ZHANG, 

R.L. MEYER, R. OGAKI, Aarhus University, Denmark, P. KINGSHOTT, Swinburne University 

of Technology, Australia 

BI+AS-TuA4 Adsorption Behavior of Serum Albumin on Nanocrystalline 

Apatites, K. FEARS, D. BURDEN, C. LOVE, U.S. Naval Research Laboratory, D. DAY, 

Missouri University of Science and Technology, T. CLARK, U.S. Naval Research Laboratory 

BI+AS-TuA7 Quantitative Characterization of Cells in Biofilms and on 

Surfaces, A.C. AREIAS, C. SOUSA, G.P. MENDES, University of Minho, Portugal, P. 

MACK, Thermo Fisher Scientific, UK, S. LANCEROS-MÉNDEZ, University of Minho, 

Portugal, D.Y. PETROVYKH, International Iberian Nanotechnology Laboratory, Portugal 

4:20 pm Invited talk continued. BI+AS-TuA8 Antimicrobial Multilayers and Their Analysis by Laser 

Desorption Postionization Mass Spectrometry, M. BLAZE, C. BHARDWAJ, A. 

AKHMETOV, L. HANLEY, University of Illinois at Chicago 

4:40 pm AS+BI-TuA9 New Desorption Mass Spectrometry Approaches for 

Inorganic Particle Analysis, C. SZAKAL, A.R. KONICEK, M. UGELOW, D.S. 

SIMONS, A. HERZING, R.D. HOLBROOK, National Institute of Standards and Technology 

5:00 pm AS+BI-TuA10 TOF SIMS Analyses of Ga Concentration as a Function of 

Distance from FIB Milled Features, C. SANTEUFEMIO, University of 

Massachusetts, B.P. GORMAN, Colorado School of Mines, C. ZHOU, F.A. STEVIE, North 

Carolina State University, L.A. GIANNUZZI, L.A. Giannuzzi & Associates LLC 

5:20 pm AS+BI-TuA11 The Surface Characterization of Oligo(Ethylene Glycol) 

Functionalized Gold Nanoparticles, A. RAFATI, D.G. CASTNER, University of 

Washington 

5:40 pm AS+BI-TuA12 Characterization Challenges of Ceria Nanoparticles: When 

is a Nanoparticle Not a Nanoparticle?, D.R. BAER, P. MUNUSAMY, A.S. 

KARAKOTI, EMSL, Pacific Northwest National Laboratory, S.V.N.T. KUCHIBHATLA, Battelle 

Science and Technology India, S.S. SEAL, University of Central Florida, S. THEVUTHASAN, 

C.F. WINDISCH, JR., EMSL, Pacific Northwest National Laboratory 

BI+AS-TuA9 Combining Colloidal Probe Atomic Force and Reflection 

Interference Contrast Microscopy to Study the Mechanics of Biopolymer 

Films, R.P. RICHTER, CIC biomaGUNE, Spain; Joseph Fourier University, France; Max 

Planck Institute for Intelligent Systems, Germany, S. ATTILI, CIC biomaGUNE, Spain; Max 

Planck Institute for Intelligent Systems, Germany, V. BORISOV, Institut Pluridisciplinaire de 

Recherche sur l’Environnement et les Materiaux, France 

BI+AS-TuA10 Surface Modification of Silicone Hydrogels through 

Adsorption of Diblock Copolymers, Y.J. HUO, S.S. PERRY, University of Florida 

113 

BI+AS-TuA11 Invited 

Microfluidic Devices for High-Throughput Quantitation in Biology: From 

Biophysics to Diagnostics, S. MAERKL, Ecole Polytechnique Fédérale de Lausanne 

(EPFL), Switzerland 



Room: 9 - Session EM-TuA 


Materials and Processes for Advanced Interconnects 

Moderators: J. Bielefeld, Intel Corporation, S. King, Intel Corporation 

2:00 pm EM-TuA1 Interface Engineering of Porous and Non-Porous ILD Layers 

Using Molecular Layer Deposition for Interconnect Applications, J. 

BIELEFELD, Intel Corporation, H. ZHOU, P. LOSCUTOFF, Stanford University, S. 

CLENDENNING, Intel Corporation, S.F. BENT, Stanford University 

2:20 pm EM-TuA2 Synchrotron X-ray Scattering Investigation of Morphological 

Stability of Cu Thin Film Interfaces, A.P. WARREN, University of Central Florida, 

M.F. TONEY, Stanford Synchrotron Radiation Lightsource, K. BARMAK, Carnegie Mellon 

University, I.I. KRAVCHENKO, Oak Ridge National Laboratory, K.R. COFFEY, University of 


2:40 pm EM-TuA3 Invited 

Interconnect Scaling for 10nm and Beyond, Z. TOKEI, IMEC, Belgium 


Room: 15 - Session EN+TF-TuA 

Thin Film, Heterostructured, and Organic Solar Cells 

Moderator: M. Filler, Georgia Institute of Technology 

EN+TF-TuA1 Invited 

Photonic Materials for Solar Energy Conversion at the Thermodynamic 

Limit, H.A. ATWATER, California Institute of Technology 





4:00 pm EM-TuA7 High Throughput Crystal Orientation Mapping of Nanometric 

Cu: Impact of Surface and Grain Boundary Scattering on Electrical 

Resistivity, X. LIU, Carnegie Mellon Univ., A. DARBAL, Nanomegas, K. GANESH, Univ. of 

Texas at Austin, G. ROHRER, D. CHOI, Carnegie Mellon Univ., P. FERREIRA, Univ. of 

Texas at Austin, B. YAO, T. SUN, A.P. WARREN, Univ. of Central Florida, M.F. TONEY, 

Stanford Synchrotron Radiation Lab, K.R. COFFEY, Univ. of Central Florida, K. BARMAK, 

Carnegie Mellon Univ. 

4:20 pm EM-TuA8 Developing Robust Ultra-Low-k Dielectric (κ≤2.55) Materials 

using Novel Characterization Techniques for the 20nm Node and 

Beyond, D.R. KIOUSSIS, Z. SUN, Y. LIN, GLOBALFOUNDRIES, A. MADAN, N. KLYMKO, 

C. PARKS, S. MOLIS, IBM Semiconductor R&D Ctr, E.T. RYAN, GLOBALFOUNDRIES, E. 

HUANG, S.M. GATES, A. GRILL, IBM T.J. Watson Res. Center, B. KIM, J.K. KIM, Samsung 

Electronics Co. Ltd., Korea, D. RESTAINO, T.H. LEE, IBM Semiconductor R&D Ctr, S. 

HOSADURGA, IBM Research Group, S.A. COHEN, IBM T.J. Watson Res. Center, K. 

VIRWANI, IBM Research - Almaden 

4:40 pm EM-TuA9 Reflection Electron Energy Loss Spectroscopy Investigation of 

Band Gap and Defect States in Low-k and High-k Dielectrics, B. FRENCH, 

S. KING, Intel Corporation 

5:00 pm EM-TuA10 The Effects of Plasma Exposure and Vacuum-Ultraviolet 

Radiation on Photopatternable Low-k Dielectric Materials, M.T. NICHOLS, K. 

MAVRAKAKIS, University of Wisconsin-Madison, Q. LIN, IBM T.J. Watson Research Center, 

J.L. SHOHET, University of Wisconsin-Madison 

5:20 pm EM-TuA11 A Survey of Alternative Methods for Curing Porous SiCOH 

Films, N. LICAUSI, V. KAMINENI, GLOBALFOUNDRIES, S. OHSIEK, H. GEISLER, M. 

WEISHEIT, M. MAJER, GLOBALFOUNDRIES, Germany, E.T. RYAN, GLOBALFOUNDRIES 

5:40 pm EM-TuA12 Metallization Challenges in Integration of Soft Dielectric 

Materials, R. CHEBIAM, C. JEZEWSKI, B. KRIST, H. YOO, J. CLARKE, Intel Corporation 

114 


Semiconducting Carbon Nanotubes as Polymer-Like Near-Infrared 

Bandgap Photoabsorbers, M.S. ARNOLD, D.J. BINDL, M.-Y. WU, M.J. SHEA, 

University of Wisconsin Madison 

EN+TF-TuA7 Understanding Vertical Stratification in Polymer:Fullerene 

Bulk Heterojunction Solar Cells, M.D. CLARK, Air Force Research Laboratory, M.L. 

JESPERSEN, University of Dayton Research Institute, B.J. LEEVER, Air Force Research 

Laboratory 

EN+TF-TuA8 Novel, Single-Crystalline-like Silicon on Low-Cost, Flexible 

Substrates for High Efficiency Thin Film Photovoltaics, V. 

SELVAMANICKAM, P. DUTTA, R. WANG, Y. GAO, M. YANG, G. MAJKIC, E. GALTSYAN, 

University of Houston 


High-Efficiency Multijunction Solar Cells Employing Dilute Nitrides, V.A. 

SABNIS, H.B. YUEN, M. WIEMER, Solar Junction 


EN+TF-TuA11 Non-Radiative Carrier Recombination in InGaAs/GaAsP 

Strain-Balanced Superlattice Solar Cell, T. AIHARA, University of Miyazaki, Japan 

EN+TF-TuA12 Piezoelectric Photothermal Spectra and Carrier 

Nonradiative Recombination in InGaAs/GaAsP Super Lattice Structured 

Solar Cells, T. IKARI, T. AIHARA, Y. NAKANO, University of Miyazaki, Japan, Y. WANG, 

M. SUGIYAMA, Y. NAKANO, University of Tokyo, Japan, A. FUKUYAMA, University of 

Miyazaki, Japan


Room: West Hall - Session EW-TuA 





Room: 13 - Session GR+AS+NS+SP+SS-TuA 

Graphene Characterization Including Microscopy and 

Spectroscopy 

Moderator: J.C. Hone, Columbia University 

2:00 pm GR+AS+NS+SP+SS-TuA1 High Resolution Real and Reciprocal Space 

Photoelectron Emission Microscocopy on Heterogeneous 

Graphene/SiC(000-1), K. WINKLER, B. KROEMKER, 1Omicron NanoTechnology, 

Germany, N. BARRETT, IRAMIS, Saclay, France, E. CONRAD, GeorgiaTech 

2:20 pm GR+AS+NS+SP+SS-TuA2 Evidence of Nanocrystalline Semiconducting 

Graphene Monoxide during Thermal Reduction of Graphene Oxide in 

Vacuum, C. HIRSCHMUGL, E. MATTSON, H. PU, S. CUI, M. SCHOFIELD, S. RHIM, G. 

LU, M. NASSE, University of Wisconsin Milwaukee, R.S. RUOFF, University of Texas at 

Austin, M. WEINERT, M. GAJDARDZISKA-JOSIFOVSKA, J. CHEN, University of Wisconsin 

Milwaukee 

2:40 pm GR+AS+NS+SP+SS-TuA3 Invited 

Scanning Tunneling Spectroscopy of Epitaxial Graphene: Local Band 

Mapping and Wavefunction Engineering, P.N. FIRST, Georgia Tech 


3:20 pm EW-TuA5 NEG Pumps Improving the Performance of Vacuum Systems, B. 

GARCIA, E. MACCALLINI, P. MANINI, SAES Getters 

3:40 pm EW-TuA6 New Developments in Thin Film Deposition from Kurt J. Lesker 

Company ® , S. ARMSTRONG, D. BINGAMAN, Kurt J. Lesker Company 

BREAK 

BREAK 

4:00 pm GR+AS+NS+SP+SS-TuA7 Intercalation of O2 an CO Controlled by the 

Mesoscopic Structure of Graphene, E. GRÅNÄS, J. KNUDSEN, Lund University, 

Sweden, U. SCHRÖDER, T. GERBER, C. BUSSE, Universität zu Köln, Germany, M.A. 

ARMAN, K. SCHULTE, J.N. ANDERSEN, Lund University, Sweden, T.W. MICHELY, 

Universität zu Köln, Germany 

4:20 pm GR+AS+NS+SP+SS-TuA8 Long-range Atomic Ordering and Variable 

Interlayer Interactions in Two Overlapping Graphene Lattices with 

Stacking Misorientations, T. OHTA, T.E. BEECHEM, Sandia National Laboratories, 

J.T. ROBINSON, Naval Research Laboratory, G.L. KELLOGG, Sandia National Laboratories 

4:40 pm GR+AS+NS+SP+SS-TuA9 Chemically-resolved Interface Structure of 

Epitaxial Graphene on SiC(0001), J.D. EMERY, Northwestern Univ., B. DETSLEFS, 

European Synchrotron Radiation Fac., France, H.J. KARMEL, Northwestern Univ., V.D. 

WHEELER, U.S. Naval Research Lab, J.M.P. ALABOSON, Northwestern Univ., L.O. 

NYAKITI, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Lab, 

M.C. HERSAM, Northwestern Univ., J. ZEGENHAGEN, European Synchrotron Radiation 

Fac., France, M.J. BEDZYK, Northwestern Univ. 

5:00 pm GR+AS+NS+SP+SS-TuA10 Formation of Graphene on SiC( 000-1 ) in 

Disilane and Neon Environments, G. HE, N. SRIVASTAVA, R. FEENSTRA, 

Carnegie Mellon University 

5:20 pm GR+AS+NS+SP+SS-TuA11 Characterization of Few Layer Graphene Films 

Grown on Cu-N i and SiC Substrates, P. TYAGI, J.D. MCNEILAN, J. ABEL, F.J. 

NELSON, Z.R. ROBINSON, R. MOORE, A.C. DIEBOLD, V.P. LABELLA, C.A. VENTRICE, 

JR., University at Albany - SUNY, A.A. SANDIN, D.B. DOUGHERTY, J.E. ROWE, North 

Carolina State Univ., C. DIMITRAKOPOULOS, A. GRILL, C.Y. SUNG, IBM T.J. Watson Res. 

Center, S. CHEN, A. MUNSON, Y. HAO, C.W. MAGNUSON, R.S. RUOFF, Univ. of Texas at 

Austin 

5:40 pm GR+AS+NS+SP+SS-TuA12 Thickness-related Electronic Properties of Singlelayer 

and Few-layer Graphene Revealed by Single-pass Kelvin Force 

Microscopy and dC/dZ Measurements, J. YU, S. WU, Agilent Technologies, Inc. 

115



Room: 7 - Session IS+AS+BI+ET+GR+NS-TuA 

In Situ Studies of Organic and Soft Materials and In Situ 

Microscopy 

Moderators: K. Artyushkova, The University of New Mexico, 

J.A. Eastman, Argonne National Laboratory 

2:00 pm IS+AS+BI+ET+GR+NS-TuA1 Micronutrient Detection and Quantification from 

Data Obtained from Plasma Pencil Atmospheric Mass Spectrometry, M.J. 

STEIN, E. LO, C. WATERTON, D.G. CASTNER, B.D. RATNER, University of Washington 

2:20 pm IS+AS+BI+ET+GR+NS-TuA2 In Situ Real Time Examination of the Thin Film 

Growth of Pentacene on Polymeric Dielectrics Using X-Ray Synchrotron 

Radiation: Unexpected Changes in the Evolution of Surface Morphology 

with Substrate, T.V. DESAI, A.R. WOLL, J.R. ENGSTROM, Cornell University 

2:40 pm IS+AS+BI+ET+GR+NS-TuA3 Invited 

In Situ, Real-Time Diagnostics of Colon Cancer and Inflammatory Bowel 

Diseases by Direct Combination of Endoscopy and Rapid Evaporative 

Ionization Mass Spectrometry, Z. TAKATS, Imperial College, UK, L.A. SASI-SZABO, 

University of Debrecen, Hungary, J. KINROSS, Imperial College, UK, J. BALOG, Medimass 

Ltd., L. MUIRHEAD, K.C. SCHAFER, C. GUALLAR-HOYAS, Imperial College, UK 


Room: 6 - Session MI+EN+BI-TuA 

Fundamental Problems in Magnetism 

Moderator: G.J. Szulczewski, The University of Alabama 

MI+EN+BI-TuA1 Invited 

Spintronics – Implications for Energy, Information and Medical 

Technologies, S.D. BADER, Argonne National Laboratory and Northwestern University 





4:00 pm IS+AS+BI+ET+GR+NS-TuA7 Nanocrystal Phase Transformations in ZBLAN 

Glass Ceramics, J.A. JOHNSON, University of Tennessee Space Institute, C. 

ALVAREZ, Northwestern University, Y. LUI, Argonne National Laboratory, C.E. JOHNSON, 

University of Tennessee Space Institute, A. PETFORD-LONG, Argonne National Laboratory 

4:20 pm IS+AS+BI+ET+GR+NS-TuA8 In Situ Microscopy of Organic Film Growth: Zn- 

Phthalocyanine on Ag(100), A. AL-MAHBOOB, J.T. SADOWSKI, Brookhaven 


4:40 pm IS+AS+BI+ET+GR+NS-TuA9 In Situ Sub-Micrometer Scale Chemical Imaging 

with Scanning Transmission X-ray Microscopy, S.T. KELLY, P. NIGGE, 

Lawrence Berkeley National Laboratory, A. LASKIN, B. WANG, Pacific Northwest National 

Laboratory, A. TIVANSKI, S. GHORAI, University of Iowa, T. TYLISZCZAK, M.K. GILLES, 


5:00 pm IS+AS+BI+ET+GR+NS-TuA10 Invited 

In Situ Microscopy of 2D Materials – Graphene and Beyond, P.W. SUTTER, 

Brookhaven National Laboratory 


Multiscale Modeling for Spintronics, K.A. MEWES, T. MEWES, W.H. BUTLER, 

University of Alabama 

MI+EN+BI-TuA7 Anomalous Magneto Transport in Amorphous TbFeCo 

Film with Perpendicular Magnetic Anisotropy, N. ANUNIWAT, M. DING, J. 

POON, S.A. WOLF, J.W. LU, University of Virginia 

MI+EN+BI-TuA8 Magnetic Properties of Fe Clusters: A DFT+U vs Nano 

DFT+DMFT Analysis, A.K. KABIR, V. TURKOWSKI, T.S. RAHMAN, University of 



Rationally-designed Iron Oxide Nanostructures for Bioimaging, Y. BAO, 

The University of Alabama 


5:20 pm Invited talk continued. MI+EN+BI-TuA11 Probing the Electronic and Magnetic Properties of Bulk 

Materials and Buried Layers and Interfaces with Standing-Wave and 

Hard-X-Ray Photoemission, C.S. FADLEY, University of California, Davis 

5:40 pm IS+AS+BI+ET+GR+NS-TuA12 In Situ SEM and ToF-SIMS Imaging of Liquids 

for Biological Applications, L. YANG, X.-Y. YU, Z. ZHU, S. THEVUTHASAN, Pacific 

Northwest National Laboratory, J. COWIN, Cowin In-Situ Science, L. L. C. 

116 

MI+EN+BI-TuA12 3D Vector Magnetometry of Thin-Films using 

Generalized Magneto-Optical Ellipsometry (GME), J.A. ARREGI, J.B. 

GONZÁLEZ-DÍAZ, O. IDIGORAS, A. BERGER, CIC nanoGUNE Consolider, Spain



Room: 12 - Session NS+EN+GR-TuA 

Nanomaterials in Two and Three Dimensions 

Moderator: V.P. LaBella, University at Albany-SUNY 

2:00 pm NS+EN+GR-TuA1 Assembly of Core-Shell Superparamagnetic 

Nanoparticles at Liquid-Liquid Interfaces, L. ISA, ETH Zurich, Switzerland, D. 

CALZOLARI, University of Fribourg, Switzerland, M. KRÖGER, E. DEL GADO, ETH Zurich, 

Switzerland, R. ZIRBS, BOKU Wien, Austria, T. GILLICH, E. AMSTAD, ETH Zurich, 

Switzerland, D. PONTONI, ESRF, France, E. REIMHULT, BOKU Wien, Austria 

2:20 pm NS+EN+GR-TuA2 Nanopatterning of SPRi Sensor Surfaces for Sub- 

Nanomolar Biomarker Detection, M.A. PARRACINO, MJ. PEREZ ROLDAN, J. 

HANUS, V. SPAMPINATO, G. CECCONE, P. COLPO, F. ROSSI, Nanobiosciences Unit, 

JRC, Italy 

2:40 pm NS+EN+GR-TuA3 Invited 

Three-Dimensional DNA Nanostructures for Biological and Materials 

Applications, H. SLEIMAN, McGill University, Canada 


Room: 24 - Session PS1-TuA 

Plasma Deposition and Plasma Enhanced ALD 

Moderator: S. Agarwal, Colorado School of Mines 

PS1-TuA1 Invited 

Looking Down the Rabbit Hole: Impact of Porosity in Plasma-deposited 

Inorganic Layers on Their Moisture Permeation Barrier Performance, M. 

CREATORE, Eindhoven University of Technology, The Netherlands 


PS1-TuA3 Dual Etching and Deposition Mechanism of a Microwave 

Alcohol Plasma on Commercial Polymers for the Enhancement of 

Adhesion, C.J. HALL, P.J. MURPHY, H.J. GRIESSER, University of South Australia 

3:00 pm Invited talk continued. PS1-TuA4 The Roles of Ions and Neutrals in Growth Mechanisms of 

Plasma Polymer Films, A. MICHELMORE, University of South Australia 



4:00 pm NS+EN+GR-TuA7 Single Layer of MoS2 on Close-Packed Metal Surfaces, 

D. LE, T.S. RAHMAN, University of Central Florida 

4:20 pm NS+EN+GR-TuA8 Invited 

Chemically Exfoliated Two Dimensional Materials for Energy 

Applications, M. CHHOWALLA, Rutgers University 

PS1-TuA7 Defect Analysis and Mechanical Performance of Optoelectronic 

Thin Films Deposited on Flexible Substrates, R. PATEL, C.A. WOLDEN, 

Colorado School of Mines 

PS1-TuA8 Plasma Polymerization of Ethyl Lactate, S. LIGOT, University of 

Mons, Belgium, F. RENAUX, Materia Nova Research Center, Belgium, L. DENIS, University 

of Mons, Belgium, D. COSSEMENT, Materia Nova Research Center, Belgium, P. DUBOIS, 

R. SNYDERS, University of Mons, Belgium 

4:40 pm Invited talk continued. PS1-TuA9 Functional Carbon Contained Film Formation using Neutral- 

Beam-Enhanced Chemical-Vapor-Deposition by Microwave Plasma, Y. 

KIKUCHI, Tohoku University and Tokyo Electron, Japan, A. WADA, S. SAMUKAWA, Tohoku 


5:00 pm NS+EN+GR-TuA10 Isolation and Surface Structure of Ultra-thin Nanosheets 

formed by Atomic Layer Deposition, K.M. LEE, D.H. KIM, G.N. PARSONS, North 

Carolina State University 

5:20 pm NS+EN+GR-TuA11 All Solution Processed InGaO3(ZnO)m Thin Films with 

Layered Structure and their Thermoelectric Properties, J.H. KIM, H.K. CHO, 


PS1-TuA10 Nano-crystalline Silicon Deposition using a Layer-by-layer 

Technique, Z. CHEN, M.N. ILIEV, J.A. MUCHA, University of Houston, Y.K. PU, Tsinghua 

University, China, D.J. ECONOMOU, V.M. DONNELLY, University of Houston 

PS1-TuA11 Role of PEALD Reactor Wall Conditions on Radical and Ion 

Substrate Fluxes, M.J. SOWA, M.J. SERSHEN, G. SUNDARAM, J.S. BECKER, 

Cambridge NanoTech, Inc. 

5:40 pm PS1-TuA12 Tuning Material Properties in ALD ZnO Films: In Situ Plasma 

Treatments and Doping, M.A. THOMAS, Stetson University, J.B. CUI, University of 

Arkansas at Little Rock 

117


Room: 25 - Session PS2-TuA 


Plasma Surface Interaction during Plasma Etching 

Moderator: S. Shannon, North Carolina State University 

2:00 pm PS2-TuA1 Surface Interaction Mechanisms Enabling Plasma-Enhanced 

Strongly Time-Dependent Etching Rates, D. METZLER, E. VOGLI, F. HILPERT, 

G.S. OEHRLEIN, University of Maryland 

2:20 pm PS2-TuA2 Reactive Etching or Deposition Properties of Silicon Halide 

Ions in Gate Etching Processes, T. ITO, K. KARAHASHI, S. HAMAGUCHI, Osaka 


2:40 pm PS2-TuA3 Cl Atom Reactions on Silicon Oxy-Chloride Layers Deposited 

on Chamber Walls in Chlorine-Oxygen Plasmas, A.K. SRIVASTAVA, 

University of Houston, R. KHARE, Lam Research Corp, V.M. DONNELLY, University of 

Houston 

3:00 pm PS2-TuA4 Molecular Dynamic Simulation of Possible Damage Formation 

at Vertical Walls of finFET Devices during Plasma Etching Processes, K. 

MIZOTANI, M. ISOBE, S. HAMAGUCHI, Osaka University, Japan 



4:00 pm PS2-TuA7 Invited 

Real time In Situ Electron Spin Resonance (ESR) Study of Free 

Radicals on Materials Created by Plasmas, K. ISHIKAWA, Nagoya University, 

Japan, H. HORIBE, Kanazawa Institute of Technology, Japan, M. ITO, Meijo University, 

Japan, M. SEKINE, M. HORI, Nagoya University, Japan 


Room: 22 - Session SE+PS-TuA 

Atmospheric Pressure Plasmas 

Moderators: H. Barankova, Uppsala University, Sweden, 

P.H. Mayrhofer, Montanuniversität Leoben, Austria 

SE+PS-TuA1 Invited 

Plasma Medicine: The Journey of a New Field of Research, from Killing 

of Bacteria to Killing of Cancer Cells, M. LAROUSSI, Old Dominion University 


SE+PS-TuA3 VHF Atmospheric Glow Discharge: Electrical and Optical 

Characterization for Multiple Gases, B. BYRNS, A. LINDSAY, S. SHANNON, A. 

MCWILLIAMS, S. HUDAK, J. CUOMO, North Carolina State University 

SE+PS-TuA4 Atmospheric Pressure Glow Discharge for Point-of-Use 

Water Treatment, A. LINDSAY, B. BYRNS, S. SHANNON, D. KNAPPE, North Carolina 

State University 

SE+PS-TuA7 Cold Atmospheric Plasma in Liquids, H. BARANKOVA, L. 

BARDOS, Uppsala University, Sweden 

4:20 pm Invited talk continued. SE+PS-TuA8 Characterization of Amorphous and Microcrystalline Si Films 

Grown in Atmospheric-Pressure Very High-Frequency Plasma, H. 

KAKIUCHI, H. OHMI, T. YAMADA, A. HIRANO, T. TSUSHIMA, K. YASUTAKE, Osaka 


4:40 pm PS2-TuA9 Roles of Hydrogen for Hydrofluorocarbon (HFC) Plasma 

Etching of Silicon Nitride (SiN), S. HAMAGUCHI, K. MIYAKE, K. MIZOTANI, M. 

ISOBE, T. ITO, K. KARAHASHI, Osaka University, Japan, M. FUKASAWA, T. TATSUMI, 

Sony Corporation, Japan 

5:00 pm PS2-TuA10 Molecular Dynamics Analysis of Si Etching with Cl and Br 

Beams: Ion Incident Angle and Neutral Radical Flux Dependence, N. 

NAKAZAKI, H. TSUDA, Y. TAKAO, K. ERIGUCHI, K. ONO, Kyoto University, Japan 

5:20 pm PS2-TuA11 Controlling Correlations Between Ion and UV/VUV Photon 

Fluxes in Low Pressure Plasma Materials Processing, P. TIAN, M.J. 

KUSHNER, University of Michigan 

5:40 pm PS2-TuA12 Formation Mechanisms of Nanoscale Surface Roughness and 

Rippling during Plasma Etching and Sputtering of Si under Oblique Ion 

Incidence, H. TSUDA, Y. TAKAO, K. ERIGUCHI, K. ONO, Kyoto University, Japan 

118 

SE+PS-TuA9 Atmospheric Plasma Polymerization of Esters: Tuning the 

Coating Chemistry by Tuning the Precursor Chemistry, B. NISOL, A. BATAN, 

Université Libre de Bruxelles, Belgium, A. KAKAROGLOU, M. WADIKAR, G. SCHELTJENS, 

G. VAN ASSCHE, B. VAN MELE, I. DE GRAEVE, H. TERRYN, Vrije Universiteit Brussel, 

Belgium, F. RENIERS, Université Libre de Bruxelles, Belgium


Room: 16 - Session SP+AS+BI+ET+MI+NS-TuA 

Advances in Scanning Probe Imaging 

Moderators: S. Allen, The University of Nottingham, UK, 

Z. Gai, Oak Ridge National Laboratory 

2:00 pm SP+AS+BI+ET+MI+NS-TuA1 Invited 

Molecules Investigated with Atomic Resolution using Scanning Probe 

Microscopy with Functionalized Tips, L. GROSS, F. MOHN, N. MOLL, G. MEYER, 

IBM Research - Zurich, Switzerland 


2:40 pm SP+AS+BI+ET+MI+NS-TuA3 Functional Imaging of Jahn-Teller Dynamics at 

the Single-molecule Scale, J. LEE, S.M. PERDUE, A. RODRIGUEZ PEREZ, P.Z. EL- 

KHOURY, V.A. APKARIAN, University of California, Irvine 

3:00 pm SP+AS+BI+ET+MI+NS-TuA4 Atomic and Chemical Resolution of 

Heterogeneous 1-D Metallic Chains on Si(100) by Means of nc-AFM and 

DFT, M. SETVIN, M. ONDRACEK, P. MUTOMBO, Z. MAJZIK, P. JELINEK, Institute of 

Physics of ASCR, Czech Republic 



4:00 pm SP+AS+BI+ET+MI+NS-TuA7 Invited 

Simple Routes to High Speed and Super Resolution AFM, J.K. HOBBS, 

University of Sheffield, UK 


4:40 pm SP+AS+BI+ET+MI+NS-TuA9 A Scanning Probe Microscopy Study of Trimesic 

Acid Self-Assembly on Highly Oriented Pyrolytic Graphite, V. KOROLKOV, 

S. ALLEN, C.J. ROBERTS, S.J.B. TENDLER, The University of Nottingham, UK 

5:00 pm SP+AS+BI+ET+MI+NS-TuA10 Understanding the Role of the Probe in SPM 

Imaging of Metal Oxides: New Opportunities for In-Depth Surface 

Analysis, H. MÖNIG, Univ. of Münster, Germany, M. TODOROVIC, Univ. Autónoma de 

Madrid, Spain, M.Z. BAYKARA, Yale Univ., T.C. SCHWENDEMANN, Southern Connecticut 

State Univ., J. GÖTZEN, Ö. ÜNVERDI, E.I. ALTMAN, Yale Univ., R. PEREZ, Univ. 

Autonoma de Madrid, Spain, U.D. SCHWARZ, Yale Univ. 

5:20 pm SP+AS+BI+ET+MI+NS-TuA11 Characterizing the Best Tips for NC-AFM 

Imaging on Metal Oxides with Force Spectroscopy and Theoretical 

Simulations, D. FERNANDEZ-TORRE, Universidad Autónoma de Madrid, Spain, A. 

YURTSEVER, Osaka University, Japan, P. POU, Universidad Autónoma de Madrid, Spain, 

Y. SUGIMOTO, M. ABE, S. MORITA, Osaka University, Japan, R. PEREZ, Universidad 

Autónoma de Madrid, Spain 

5:40 pm SP+AS+BI+ET+MI+NS-TuA12 Direct Probe of Interplay between Local 

Structure and Superconductivity in FeTe0.55Se0.45, M.H. PAN, W.Z. LIN, Q. LI, 

B.C. SALES, S. JESSE, A.S. SEFAT, S.V. KALININ, Oak Ridge National Laboratory 

* Gaede Langmuir Award Winner 


119 


Room: 21 - Session SS+NS-TuA 

Reactivity of Size and Shape Selected Nanoparticles 

Moderator: C.T. Campbell, University of Washington 

SS+NS-TuA1 Invited 

2012 AVS Gaede-Langmuir Award Lecture: Surface Photochemistry on 

Compact Crystals and on Metal Nanoparticles, D. MENZEL*, Fritz-Haber 

Institut, and Techn. Univ. Muenchen, Germany 

SS+NS-TuA3 Photocatalytic Deposition of Au onto Ordered Linear Arrays 

of TiO2 Nanoparticles, J. TAING, A. MARGARELLA, Y. LIU, J.C. HEMMINGER, 

University of California Irvine 

SS+NS-TuA4 Catalytic Activity of Gold-supported TiO2 Nanocrystals 

Towards Simple Alcohols, D.V. POTAPENKO, Z. LI, Y. LOU, R.M. OSGOOD, 

Columbia University 


Structure, Chemical State, and Reactivity Investigations of Size- and 

Shape-Selected Nanocatalysts under Operando Conditions, B. ROLDAN 

CUENYA, University of Central Florida 


Particle Size, Support and Alloying Effects in Electrocatalysis: 

Relationships with Heterogeneous Catalysis, B.E. HAYDEN, University of 

Southampton, UK 


SS+NS-TuA11 The Growth and Structures of Metal Nanoparticles on 

Ordered ZrO2(111) Surfaces, Y. HAN, S.W. HU, Y.H. PAN, J.B. HOU, H.B. PAN, J.- 

H. ZHU, University of Science and Technology of China 

SS+NS-TuA12 Structure and Electronic Properties of Ni Nanoparticles 

Supported on Reducible CeO2(111) Thin Films, Y.H. ZHOU, Xiamen University, 

Republic of China, J. ZHOU, University of Wyoming

Thin Film 

Room: 10 - Session TF+AS-TuA 


Modeling and Analysis of Thin Films 

Moderator: D. Irving, North Carolina State University 

2:00 pm TF+AS-TuA1 Invited 

Nanoconfined Fluids: Fundamentals and Application to Ionic-Liquid- 

Based Supercapacitors, G. FENG, S. LI, P.T. CUMMINGS, Vanderbilt University 

Thin Film 

Room: 11 - Session TF2-TuA 

ALD for Hybrid Films and Bioapplications 

Moderator: S.M. Rossnagel, IBM T.J. Watson Research Center 

TF2-TuA1 Characteristics of Nanomaterials Embedded in Atomic Layer 

Deposition Thin Films, J.S. JUR, P.J. KROMMENHOEK, J.C. HALBUR, North Carolina 

State University, H.O. EVERITT, Duke University, J.B. TRACY, G.N. PARSONS, North 


2:20 pm Invited talk continued. TF2-TuA2 ALD-Based Fabrication and Chromatographic Separations on 

Binder-Free, Carbon Nanotube-Templated Thin Layer Chromatography 

Plates, M.R. LINFORD, R.C. DAVIS, D.S. JENSEN, S. KANYAL, Brigham Young 

University, M.A. VAIL, A.E. DADSON, Diamond Analytics 

2:40 pm TF+AS-TuA3 XPS Analysis of Monomolecular Films Prepared by Self- 

Assembly and Langmuir-Blodgett Techniques, G.G. JERNIGAN, F.K. 

PERKINS, M.G. ANCONA, A.W. SNOW, Naval Research Laboratory 

3:00 pm TF+AS-TuA4 The Dynamics of Atomic-Scale Transport on the Anisotropic 

Compound Surface TiN(001), D.G. SANGIOVANNI, V. CHIRITA, L. HULTMAN, 

Linköping University, Sweden, I. PETROV, J.E. GREENE, University of Illinois at Urbana 

Champaign 



4:00 pm TF+AS-TuA7 Invited 

Multi-Method Calculations of the Thermodynamics of Film Deposition on 

Fuel Rods in Light Water Reactors, D.W. BRENNER, A.D. DONGARE, C.J. 

O'BRIEN, North Carolina State University 

TF2-TuA3 Invited 

DNA Nanopore Devices Facilited by ALD Materials, J. BAI, S.-W. NAM, E.A. 

JOSEPH, S.S. PAPA RAO, S.M. ROSSNAGEL, IBM Research Division, T.J. Watson 

Research Center 


TF2-TuA7 Conductivity and Mechanical Stretching of Conductive ALD 

Coatings on Nonwoven Fiber Mats, W.J. SWEET, C.J. OLDHAM, G.N. PARSONS, 

North Carolina State University 

4:20 pm Invited talk continued. TF2-TuA8 Molecular Layer Deposition of Alucones and Zincones Using 

Hydroquinone, Y. LEE, S.M. GEORGE, University of Colorado, Boulder 

4:40 pm TF+AS-TuA9 Toughness Enhancement in Transition Metal Nitride Thin 

Films by Alloying and Valence Electron Concentration Tuning, D.G. 

SANGIOVANNI, V. CHIRITA, L. HULTMAN, Linköping University, Sweden 

5:00 pm TF+AS-TuA10 Non-Destructive Element Specific Density Depth Profiling 

by Resonant Soft X-ray Reflectometry, S. MACKE, Max Planck - UBC Centre for 

Quantum Materials, Canada, A. RADI, University of British Columbia, Canada, R. SUTARTO, 

Canadian Light Source, Canada, G. CHRISTIANI, G. LOGVENOV, Max-Planck-Institute for 

Solid State Research, Germany, G. SAWATZKY, University of British Columbia, Canada, B. 

KEIMER, Max-Planck-Institute for Solid State Research, Germany, V. HINKOV, Max Planck - 

UBC Centre for Quantum Materials, Canada 

5:20 pm TF+AS-TuA11 Monte Carlo Radiation Model for Heat Transfer of Lamp for 

Advanced Thermal Annealing Process, K. BERA, J. RANISH, U. KELKAR, 

Applied Materials, Inc. 

5:40 pm TF+AS-TuA12 First Principles Studies of Oxygen Transfer at Buried 

Metal/Metal Oxide Interfaces, C. GOLDSTEIN, E. MILY, J.-P. MARIA, D.W. 

BRENNER, D. IRVING, North Carolina State University 

120 

TF2-TuA9 Organic-Inorganic Hybrid Thin Films Prepared by Ozone 

Assisted Molecular Layer Deposition (MLD), J. HUANG, M. LEE, A.T. LUCERO, 

J. KIM, The University of Texas at Dallas 

TF2-TuA10 Organic-Inorganic Hybrid Structure Formation via Sequential 

Vapor Infiltration, H. AKYILDIZ, M. YOKUS, R.P. PADBURY, J.S. JUR, North Carolina 

State University 

TF2-TuA11 Structural and Electrical Characterization of Ta2O5 /Al2O3 and 

ZrO2/Al2O3 Nanolaminate Films Grown by Atomic Layer Deposition 

(ALD), D. EWING, M. LILLY, Northrop Grumman Electronic Systems, M. THONE, 

Rochester Institute of Technology, J. KELLIHER, Northrop Grumman Electronic Systems


Room: 19 - Session TR-TuA 


Molecular Origins of Friction and Wear 

Moderator: S.S. Perry, University of Florida 

2:00 pm TR-TuA1 Invited 

Area, Stiffness, Friction and Adhesion of Contacts Between Rough 

Surfaces, M.O. ROBBINS, L. PASTEWKA, T. SHARP, Johns Hopkins University 


Room: 14 - Session VT-TuA 


2:40 pm TR-TuA3 Crystallographic Wear Patterns in Ionic Solids, B.A. KRICK, K.R. 

MARCHMAN, S.B. SINNOTT, W.G. SAWYER, University of Florida 

3:00 pm TR-TuA4 Measurements of Off-axis Friction Forces, K. KRISTIANSEN, X. 

BANQUY, University of California, Santa Barbara, H. ZENG, University of Alberta, Canada, 

E. CHARRAULT, S. GIASSON, Universite de Montreal, Canada, J.N. ISRAELACHVILI, 

University of California, Santa Barbara 



4:00 pm TR-TuA7 Temperature-dependent Atomic-scale Friction and Wear on 

NaCl(001), X. ZHAO, S.S. PERRY, University of Florida 

4:20 pm TR-TuA8 Molecular Dynamics Simulations of the Tribological Properties 

of C-, H-, and O-Containing Materials, J.A. HARRISON, United States Naval 

Academy, M.T. KNIPPENBERG, High Point University, P.T. MIKULSKI, K.E. RYAN, United 

States Naval Academy 

4:40 pm TR-TuA9 Ultra-Low Wear Nanocomposites: How Low Can We Go?, A.A. 

PITENIS, B.A. KRICK, J.J. EWIN, W.G. SAWYER, University of Florida 

5:00 pm TR-TuA10 Direct Measurement of Friction Forces and Shear Strengths at 

High-Speed Microscopic Contacts using a Probe and Quartz Resonator, 

B.P. BOROVSKY, St. Olaf College 

5:20 pm TR-TuA11 Isolating the Adhesive Component of Micro-Scale Rolling 

Friction via Vapor-Phase Lubrication, S. MISRA, B. HANRAHAN, R. GHODSSI, 

University of Maryland, College Park 

5:40 pm TR-TuA12 Electronic Friction at the Atomic Scale: Conduction, 

Electrostatic and Magnetic Effects, J. KRIM, North Carolina State University, I. 

ALTFEDER, Wright Patterson Air Force Laboratory 

121 

Accelerator and Ultra-Clean Vacuum Systems 

Moderator: L. Smart, Brookhaven National Laboratory 

VT-TuA1 Invited 

Design of the Vacuum System for the SuperKEKB Positron Ring, Y. 

SUETSUGU, K. KANAZAWA, K. SHIBATA, T. ISHIBASHI, H. HISAMATSU, M. SHIRAI, S. 

TERUI, High Energy Accelerator Research Organization, Japan 

VT-TuA3 Status of the FRIB Driver Linac Vacuum Calculations, B. 

DURICKOVIC, P. GIBSON, P. GUETSCHOW, Michigan State University, R. KERSEVAN, 

CERN, Switzerland, D. LEITNER, M. LEITNER, L. LINGY, F. MARTI, G. MORGAN, M. 

SCHEIN, M. SHUPTAR, Michigan State University 

VT-TuA4 The Conceptual Design of PXIE Vacuum System, A. CHEN, Fermi 

National Accelerator Laboratory 

VT-TuA7 Invited 

Contamination Control and Cleaning Techniques for Ultra Clean 

Vacuum Systems, H.G.C. WERIJ, N.B. KOSTER, J.C.J. VAN DER DONCK, A.J. 

STORM, R. VERBERK, R. VERSLUIS, TNO Technical Sciences, The Netherlands 


VT-TuA9 Large Thermal Vacuum Chamber for TB/TV Tests and Optical 

Calibration of Space Instrumentation, R. VERSLUIS, R. VERBERK, E.C. FRITZ, 

W.L.M. GIELESEN, TNO Science and Industry, The Netherlands 

VT-TuA10 A Large Seismic Attenuation System in UHV, R. TAKAHASHI, 

National Astronomical Observatory of Japan, Y. SAITO, High Energy Accelerator Research 

Organization, Japan 

VT-TuA11 Vacuum System of Cornell Energy-Recovery LINAC Prototype 

Injector, Y. LI, X. LIU, K.W. SMOLENSKI, I. BAZAROV, B.M. DUNHAM, Cornell University 

VT-TuA12 Injection Vacuum System at the TPS, C.K. CHAN, C.C. CHANG, C.L. 

CHEN, C.S. YANG, C. CHEN, Y.H. LIU, K.H. HSU, Y.T. HUANG, H.P. HSUEH, S.N. HSU, 

G.Y. HSIUNG, J.R. CHEN, NSRRC, Taiwan, Republic of China

Lunch 




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122

NOTES 

123

Tuesday Afternoon Poster Sessions 


Room: Central Hall - Session AS-TuP 

Applied Surface Science Poster Session 

6:00 pm 

AS-TuP1 Sub-Micrometer Imaging of Lipids and Trace Elements in Various 

Cells with ToF-SIMS and Laser-SNMS, H.F. ARLINGHAUS, F. DRAUDE, S. GALLA, A. 

PELSTER, M. KÖRSGEN, University of Muenster, Germany, J. TENTSCHERT, H. JUNGNICKEL, 

A. HAASE, A. LUCH, German Federal Institute of Risk Assessment, Germany, T. SCHWERDTLE, J. 

MÜTHING, University of Muenster, Germany 

AS-TuP2 Comparative Study on the Methods to Determine the Interface 

Locations in SIMS Depth Profiling Analysis of Multilayer Films, H.H. HWANG, 

University of Science and Technology (UST), Republic of Korea, J.S. JANG, H.J. KANG, Chungbuk 

National University (CBNU), Republic of Korea, K.J. KIM, University of Science and Technology 

(UST), Republic of Korea 

AS-TuP3 Estimation of Useful Yield of Electrospray Droplet Impact/Secondary 

Ion Mass Spectrometry, R. TAKAISHI, K. HIRAOKA, University of Yamanashi, Japan 

AS-TuP4 Multivariate Analysis Models to Predict Surface Chemistry or 

Performance using ToF-SIMS Mass Spectra Datasets, N. SANO, M.-L. ABEL, J.F. 

WATTS, University of Surrey, UK 

AS-TuP5 Method for Cross-sectional Analysis Using FIB, ToF-SIMS and 

Multivariate Analysis, J.A. OHLHAUSEN, M.J. RYE, P.G. KOTULA, J.R. MICHAEL, T.J. 

GARINO, Sandia National Laboratories 

AS-TuP6 XPS Depth Analysis of Metal/Polymer Multilayer by Electrospray 

Droplet Impact, Y. SAKAI, R. TAKAISHI, S. NINOMIYA, K. HIRAOKA, University of Yamanashi, 

Japan 

AS-TuP7 A Combined HAXPES and Electrical Characterisation Study of Si and 

III-V based MOS Structures, L.A. WALSH, G.J. HUGHES, Dublin City University, Ireland, 

P.K. HURLEY, J.H. LIN, Tyndall National Laboratory, Ireland, J.C. WOICIK, National Institute of 

Standards and Technology 

AS-TuP8 The Effect of Ultrasonic Treatment on the Defect Structure of the Si– 

SiO2 System by Means of Electron Spin Resonance, MOS Capacitance 

Technique and Secondary Ions Mass-Spectroscopy is Presented, D.J. 

KROPMAN, Tallinn University of Technology, Estonia 

AS-TuP9 The Development of Charged Particle Lenses for High Spatial 

Resolution XPS Studies, R. WALKER, Shimadzu Research Laboratory (Europe) LTD, UK 

AS-TuP10 Image Depth Profiling for Three-Dimensional Characterisation of 

Microelectronic Structures, B. SGAMMATO, A.E. WRIGHT, A. BUSHELL, Thermo Fisher 

Scientific, UK 

AS-TuP11 Developing a Methodology for XPS Profiling of Biofilms and 

Biological Materials, R.G. WHITE, Thermo Fisher Scientific, UK, D.Y. PETROVYKH, 

International Iberian Nanotechnology Laboratory, Portugal, A.C. AREIAS, C. SOUSA, G.P. 

MENDES, University of Minho, Portugal 

AS-TuP12 XPS and Auger Analysis of Single and Multi-Layer Graphene Films: 

What is Graphene and What is Not?, H.M. MEYER III, I. VLASSIOUK, Oak Ridge National 

Laboratory, A.V. SUMANT, Argonne National Laboratory 

AS-TuP13 XPS Sputter Depth Profiling of Organic Thin Films Using an Ar 

Cluster Ion Source, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, W. BOXFORD, Kratos 

Analytical Ltd., UK 

AS-TuP14 Quantitative XPS Depth Profiling of Mobile Ions in Soda-Lime-Silica 

Glasses using a Polyatomic Ion Source, C.J. BLOMFIELD, S.J. HUTTON, W. 

BOXFORD, Kratos Analytical Ltd., UK 

AS-TuP15 XPS Assessment of the Thickness of Fe Oxide Layers using 

Standard and Active Shirley Background, M. BRAVO-SANCHEZ, CINVESTAV-Unidad 

Queretaro, Mexico, F. ESPINOSA-MAGAÑA, CIMAV Unidad-Chihuahua, Mexico, A. HERRERA- 

GOMEZ, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico 

AS-TuP16 Active Fitting for Optimized Shirley Background Determination, J. 

MUÑOZ-FLORES, UAM-Xochimilco, Mexico, A. HERRERA-GOMEZ, UAM-Azcapotzalco and 


AS-TuP17 Impact of an Instrumented Custom Side Chamber for Catalysis 

Processing Studies, M. ENGELHARD, D.R. BAER, EMSL, Pacific Northwest National 

Laboratory, S. LIN, Washington State University, D. MEI, S. THEVUTHASAN, EMSL, Pacific 


AS-TuP18 Atom Probe Tomography Analysis of Grain Boundaries in CdTe, V.S. 

SMENTKOWSKI, General Electric Global Research Center, D.J. LARSON, D.A. REINHARD, T.J. 

PROSA, Cameca Instruments Inc., D. OLSON, Cambridge University, UK, D. LAWRENCE, P.H. 

CLIFTON, R.M. ULFIG, T.F. KELLY, Cameca Instruments Inc. 

AS-TuP19 Mapping of a Natural Lubricant Network on the Surface of Silicone 

Hydrogel Materials Using Surface and Bulk Chemistry Techniques, K.A. 

WYGLADACZ, D.J. HOOK, M. MERCHEA, E.P. MAZIARZ, Bausch + Lomb 

124 

AS-TuP20 Kinetics and Mechanism Studies of Copper Nano-Structures 

Formation on Functionalized Si Surfaces, J.M. LIN, University of Delaware, K.A. 

PERRINE, University of California, Irvine, A.V. TEPLYAKOV, University of Delaware 

AS-TuP21 Dry Cleaning Methods for Single Reconstructions of (100) InGaAs 

Following Air Exposure and Post Annealing Conditions, W. MELITZ, M. EDMONDS, 

T.J. KENT, A.C. KUMMEL, University of California San Diego 

AS-TuP22 The Effect of Gas Environment on the Electronic and Optical 

Properties of Amorphous Indium Zinc Tin Oxide Thin Films, Y.R. DENNY, S.Y. 

LEE, K.I. LEE, S.J. SEO, Chungbuk National University (CBNU), Republic of Korea, S. HEO, J.G. 

CHUNG, J.C. LEE, Samsung Advanced Institute of Technology, Republic of Korea, H.J. KANG, 

Chungbuk National University (CBNU), Republic of Korea 

AS-TuP23 Modification of Metal – InGaAs Schottky Barrier Height by Atomic 

Layer Deposition of Ultrathin Al2O3 Interlayers, L. CHAUHAN, Dublin City University, 

Ireland, S. GUPTA, P. JAISWAL, N. BHAT, S.A. SHIVASHANKAR, Indian Institute of Science 

Bangalore, India, G.J. HUGHES, Dublin City University, Ireland 

AS-TuP25 Electron/Positron Slowing Down in Solid Targets: Comment on Z. 

Rouabah et al. Papers, A. BENTABET, Bordj-Bou-Arreridj University, Algeria, N. 

FENINECHE, LERMPS, UTBM University, France 

AS-TuP26 STM Imaging and Manipulation of a Three-Metal-Center 

Organometallic Molecule, N.A. WASIO, R.C. QUARDOKUS, Y. LU, S.A. KANDEL, University 

of Notre Dame 

AS-TuP27 Development of Advanced SIMS Single Stage Accelerator Mass 

Spectrometer Instrument at the Naval Research Laboratory, K. FAZEL, K. 

GRABOWSKI, D. KNIES, G. HUBLER, Naval Research Laboratory 

AS-TuP28 Catalytic Effect of Ni in the Gasification of Flexicoke with Water 

Steam, J.C. DE JESUS, I.J. GONZALEZ, PDVSA Intevep, Venezuela (Bolivarian Republic of), 

E.A. RENDON, Universidad Central de Venezuela, (Bolivarian Republic of)



Room: Central Hall - Session BI-TuP 

Biomaterial Interfaces Poster Session 

6:00 pm 

BI-TuP1 Response of Mesenchymal Stem Cells to Nano-Scale Rippled Silicon 

Surfaces, O.Z. ANDERSEN, A. KELLER, D.C.E. KRAFT, F. BESENBACHER, M. FOSS, Aarhus 

University, Denmark 

BI-TuP2 In Vitro Cytotoxicity of Poly(N-isopropyl acrylamide), M.A. COOPERSTEIN, 

H.E. CANAVAN, University of New Mexico 

BI-TuP3 Functionalization of Cerium Oxide Nanoparticles with Biocompatible 

Molecules to Prevent Surface Modification by Phosphate Ions, P. MENDEZ, S. 

DAS, A. KUMAR, S. SUDIPTA, University of Central Florida 

BI-TuP4 Surface Topographic Patterns Functionalized with Different 

Biomaterials for Studying Neural Cell Behaviors, Y.P. LU, M.Y. LIN, National Applied 

Research Laboratories, Taiwan, Republic of China 

BI-TuP5 Nanoscale Characterization of Acid and Thermally Treated Collagen 

Fibrils and its Effects on the Cellular Responses of Osteoblast, Y.J. PARK, KAIST, 

Republic of Korea, G.J. CHOI, S.H. KIM, J.H. HAHN, T.G. LEE, KRISS, Republic of Korea, W.J. 

LEE, KAIST, Republic of Korea, D.W. MOON, KRISS, Republic of Korea 

BI-TuP6 Comparison between Fabrication Techniques for Glass Microfluidic 

Microchannels, C. VÉLEZ, S. SILVA, Universidad de los Andes, Colombia, X. WANG, University 

of Florida, A. GONZALEZ-MANCERA, C. LEIDY, J.F. OSMA, Universidad de los Andes, Colombia, 

F. REN, University of Florida 

BI-TuP7 Ceria-Gold-Chitosan Nanosystem with Improved Redox Activity and 

Enhanced Imaging, S. BARKAM, S. DAS, University of Central Florida, P. KULKARNI, S. 

MALLIK, North Dakota State University, S.S. SEAL, University of Central Florida 

BI-TuP8 The Effect of Light-Induced Surface Modification of Functionalized 

Ceria Nanoparticles towards Killing of Skin-Derived Cancer Cells, S. BARKAM, S. 

DAS, V.P. PEREZ, S.S. SEAL, University of Central Florida 

BI-TuP9 Stability and Dispersion Characterstics of Ceria Nanoparticles in 

Biological Media, P. MUNUSAMY, T. SUNTHARAMPILLAI, D.R. BAER, Pacific Northwest 


BI-TuP10 An Anti-biofilm Formation Design Strategy Based on Fibrous 

Topographical Cues, M. KARGAR, A.S. NAIN, B. BEHKAM, Virginia Tech 

BI-TuP11 Synthesis of Redox Active Cerium Oxide Nanoparticle with Varying 

Size and Shape by Manipulating the Chain Length of PEG, S. DAS, C. NEAL, A. 

KUMAR, University of Central Florida, A.S. KARAKOTI, Pacific Northwest National Laboratory, S.S. 

SEAL, University of Central Florida 

BI-TuP12 In Vitro Protein-Biofilm on Nanoparticles Characterizated by ToF- 

SIMS, STEM and TEM, H.P. WIESMANN, J. NEUNZEHN, Technische Universität Dresden, 

Germany, F. DRAUDE, H.F. ARLINGHAUS, University of Muenster, Germany 

BI-TuP13 A Novel Method for the Bio-conjugation of Catalytic Nanoparticles, R. 

DRAPER, S. DAS, S.S. SEAL, University of Central Florida 

BI-TuP14 A Microfluidic Study of the Interaction of Haematopoietic Stem Cells 

with their Microenvironment, M. HANKE, C. CHRISTOPHIS, C. LEINWEBER, Institute for 

Functional Interphases, KIT, Karlsruhe, Germany, N. BARAN, I. TAUBERT, P. WUCHTER, A. HO, 

University Hospital Heidelberg, Inner Medicine V, Germany, A. ROSENHAHN, Institute for 

Functional Interphases, KIT, Karlsruhe, Germany 

BI-TuP15 Computer Aided Cancer Diagnosis from Quantitative Analysis of 

Contrast-Enhanced Ultrasound, C.N. TA, Y. KONO, C.V. BARBACK, R.F. MATTREY, A.C. 

KUMMEL, University of California San Diego 

BI-TuP16 Nonfouling Amphiphilic Polysaccharides, S. BAUER, M.P. ARPA-SANCET, 

Ruprecht-Karls University Heidelberg, Germany, J. FINLAY, University of Birmingham UK, N. 

ALDRED, Newcastle University, UK, M.E. CALLOW, J.A. CALLOW, University of Birmingham UK, 

A.S. CLARE, Newcastle University, UK, A. ROSENHAHN, Karlsruhe Institute of Technology, 

Germany 

BI-TuP17 W6+ Ion Induced TiO2 Nano-porous Biomatirx for Biosensor 

Application, R.R. PANDEY, C. KANT, CSIR-National Physical Laboratory, National Physical 

Laboratory, India, M. DHAYAL, CSIR Centre for Cellular and Molecular Biology (CCMB), India, K.K. 

SAINI, CSIR-National Physical Laboratory, National Physical Laboratory, India 

BI-TuP18 STM Characterization of Chemically Prepared Peptide-Functionalized 

Monolayers, A. RAIGOZA, L. WEBB, The University of Texas at Austin 

125 


Room: Central Hall - Session EL+TF+AS+EM+SS-TuP 

Spectroscopic Ellipsometry Poster Session 

6:00 pm 

EL+TF+AS+EM+SS-TuP1 Ellipsometric Characterization of Iron Pyrite (FeS2) and 

Samarium Sesquisulfide (Sm2S3) Thin Films, A. SARKAR, N.J. IANNO, University of 

Nebraska-Lincoln, J.R. BREWER, Rare Earth Solar 

EL+TF+AS+EM+SS-TuP2 Temperature Dependence of the Dielectric Function of 

Germanium by Spectroscopic Ellipsometry, A.A. MEDINA, L.S. ABDALLAH, S. 

ZOLLNER, New Mexico State University



Room: Central Hall - Session IS-TuP 

In Situ Microscopy and Spectroscopy Poster Session 

6:00 pm 

IS-TuP1 In Situ FTIR Analysis Monitored Pt Growth by Using Metal ALD 

System, C.C. YU, Y.C. YEH, C.C. KEI, C.-N. HSIAO, Instrument Technology Research Center, 

Taiwan, Republic of China 

IS-TuP2 In Situ Infrared Spectroscopic Studies of the Stability of Nanoporous 

Materials in Water Vapor for Gas Adsorption and Separation, K. TAN, N. NIJEM, 

The University of Texas at Dallas, P. CANEPA, Wake Forest University, Q. GONG, J. LI, Rutgers 

University, T. THONHAUSER, Wake Forest University, Y.J. CHABAL, The University of Texas at 

Dallas 

IS-TuP3 Determination of the Mechanisms of Photooxidation of CdSe/ZnS 

Quantum Dots/Shells, L.J. POWELL, S. SAURABH, M. BRUCHEZ, Carnegie Mellon 

University, L.F. ALLARD, Oak Ridge National Laboratory, L. QU, M. BOOTMAN, Crystalplex Inc., 

R.F. DAVIS, Carnegie Mellon University 

IS-TuP4 Coherent X-ray Imaging, T. SENKBEIL, T. GORNIAK, A. BUCK, Karlsruhe Institute 

of Technology, Germany, K. GIEWEKEMEYER, T. SALDITT, University of Goettingen, Germany, A. 

ROSENHAHN, Karlsruhe Institute of Technology, Germany 

MEMS and NEMS 

Room: Central Hall - Session MN-TuP 

MEMS and NEMS Poster Session 

6:00 pm 

MN-TuP1 Tangential Momentum Accommodation Coefficients in Coated 

Microtubes, M. HADJ NACER, I. GRAUR, P. PERRIER, J.G. MÉOLANS, Aix-Marseille 

Université, Ecole Polytechnique Universitaire de Marseille, France, M. WÜEST, INFICON Ltd, 

Liechtenstein 

MN-TuP2 Fabrication High Aspect Ratio Microstructures in Cyclic Olefin 

Copolymer (COC) by Hot Embossing with Soft Masters, K.S. MA, J.D. TIAN, Duke 

University 

MN-TuP3 Development of Deposition and Etching Processes of Thick ZnS 

Films for Pixel Level Packaging of Infrared Focal Plane Arrays, B. GLÜCK, ST 

Microelectronics, France, G. RODRIGUEZ, G. DUMONT, S. BARNOLA, CEA, LETI, MINATEC 

Campus, France 

MN-TuP4 Low Damage Etching Process for Fabricating Micro Electro 

Mechanical Systems (MEMS) Devices using Neutral Beam, K. MIWA, Y. 

NISHIMORI, S. UEKI, BEANS Laboratory, Japan, M. SUGIYAMA, The University of Tokyo, Japan, 

T. KUBOTA, S. SAMUKAWA, Tohoku University, Japan 

MN-TuP5 Deveropment of Test Instrument for the Mechanical Strength of 

Micro-nano Wires, A. KASAHARA, M. SASAKI, H. SUZUKI, M. GOTO, M. TOSA, National 

Institute for Materials Science (NIMS), Japan 

MN-TuP6 Tin-Oxide Nanostructured Arrays Based Integrated MEMS Device for 

Low Temperature Hydrogen Detection, R.N. MCCORMACK, University of Central 

Florida, N. SHIRATO, University of Tennessee, U. SINGH, S. DAS, A. KUMAR, H.J. CHO, 

University of Central Florida, R. KALYANARAMAN, University of Tennessee, S.S. SEAL, University 

of Central Florida 

MN-TuP7 Nanoimprint Block Co-polymer Enhanced Nanostructure Lithography, 

J. ZENDEJAS, B. WONG, S. FRANZ, R. CANDLER, UCLA 

MN-TuP9 Electrostatic Deposition of a Micro Solder Particle Using a Single 

Probe by Applying a Single Rectangular Pulse, D. NAKABAYASHI, K. SAWAI, P. 

HEMTHAVY, K. TAKAHASHI, S. SAITO, Tokyo Institute of Technology, Japan 

126



Room: Central Hall - Session NM-TuP 

Topics in Nanomanufacturing Poster Session 

6:00 pm 

NM-TuP1 Fabrication and Characterization of Nanoscale Carbon Nanotube 

Patterns on Nanostructured Aluminum Surfaces, Y. WATANABE, H. KATO, S. 

ASAMI, S. SATO, S. TAKEMURA, K. SHIMADA, T. HIRAMATSU, Kanto Gakuin University, Japan 

NM-TuP2 Topographical and Raman Studies of Nano-graphite Patterns on 

Nanostructured Al and Si Surfaces by Carbon Drawing, Y. TAKARAI, T. 

HIRAKAWA, K. DOI, H. KATO, A. ISHII, Y. WATANABE, S. TAKEMURA, T. HIRAMATSU, Kanto 

Gakuin University, Japan 

NM-TuP3 Photoluminescence Enhancement of Aluminum Surfaces with 

Various Shaped Nanostructures Filled with Metallopfthalocyanines and 

Organic Dye Molecules, A. ISHII, T. SHIMIZU, H. KATO, T. KAMINO, S. TAKEMURA, T. 

HIRAMATSU, Kanto Gakuin University, Japan 

Oxide Heterostructures-Interface Form & Function Focus Topic 

Room: Central Hall - Session OX-TuP 

Oxide Interfaces and Heterostructures Poster Session 

6:00 pm 

OX-TuP1 A Kinetic Monte Carlo Study of Cu Cluster Formation on Cu and ZnO 

Surfaces using COMB Potentials, Y.-T. CHENG, T. LIANG, University of Florida, X.W. NIE, 

The Ohio State University, S.R. PHILLPOT, University of Florida, A. ASTHAGIRI, The Ohio State 

University, S.B. SINNOTT, University of Florida 

OX-TuP2 Study of the Resistive Switching Behavior of HfO2-Al2O3 

Nanolaminate Metal-Insulator-Metal MIM Devices for MIM Memory 

Applications, M. BONVALOT, J. POINTET, C. MANNEQUIN, A. BSIESY, P. GONON, C. 

VALLEE, LTM - MINATEC - CEA/LETI, France 

OX-TuP3 Molecular Dynamics Simulation Studies of The Toughening 

Mechanisms of Bio-inspired Hybrid Ceramic-based Materials, K. YAO, T. LIANG, 

D.E. YILMAZ, S.R. PHILLPOT, S.B. SINNOTT, University of Florida 

OX-TuP4 A Variable Charge Reactive Potential for Nitrogen based Hydride and 

Oxide Molecules to Simulate Oxide Growth on AlN and TiN, J. MARTINEZ, S.R. 

PHILLPOT, S.B. SINNOTT, University of Florida 

OX-TuP5 Effects of Nonstoichiometry on the Structure and Electronic 

Properties of LaCrO3 Thin Films on SrTiO3(001), K.H.L. ZHANG, Y.G. DU, L. QIAO, 

S.A. CHAMBERS, Pacific Northwest National Laboratory 

OX-TuP6 The Influence of Nano-Scale Interfaces and Co-Doping on the 

Oxygen Ionic Conductivity of Ceria and Zirconia Based Thin Film Electrolytes, 

M.I. NANDASIRI, Q. LANGFITT, M. QUINTERO, T. VARGA, A. DEVARAJ, S. MANANDHAR, P. 

NACHIMUTHU, V. SHUTTHANANDAN, S. THEVUTHASAN, EMSL, Pacific Northwest National 

Laboratory, A. KAYANI, Western Michigan University 

127



Room: Central Hall - Session SE-TuP 

Advanced Surface Engineering Poster Session 

6:00 pm 

SE-TuP1 Analysis of the Physical Damage during HBr/O2/Ar Gate Etching 

using Various Pulsed Plasmas, K.Y. JEON, J.Y. LEE, G.J. MIN, Samsung Electronics Co. 

Ltd., Republic of Korea 

SE-TuP2 Deposition of Hard SiOC(− H) Films by Atmospheric Pressure Plasma 

Enhanced CVD Method, M. NOBORISAKA, R. HORIKOSHI, A. SHIRAKURA, T. SUZUKI, 

Keio University, Japan 

SE-TuP3 Thermal Transport at Metal-Carbon Interfaces, J.J. GENGLER, Spectral 

Enegies LLC/Air Force Research Laboratory, S.V. SHENOGIN, UES Inc./Air Force Research 

Laboratory, A.A. VOEVODIN, A.K. ROY, C. MURATORE, Air Force Research Laboratory 

SE-TuP4 Multilayer on a Staircase Substrate for Hard X-ray Gratings, C. LIU, 

Argonne National Laboratory, S. LYNCH, E. BENNETT, A. GOMELLA, National Institutes of Health, 

L. ASSOUFID, Argonne National Laboratory, H. WEN, National Institutes of Health 

128 


Room: Central Hall - Session SP-TuP 

Scanning Probe Microscopy Poster Session 

6:00 pm 

SP-TuP1 Quantitative Barrier Height Measurements of Tryptanthrin Monolayers 

on HOPG, K. SRIRAMAN, J. NOVAK, J. BAUM, A. OLSON, Florida Institute of Technology 

SP-TuP2 Engineering a Molecular Labyrinth, E. YITAMBEN, N. GUISINGER, Argonne 

National Laboratory


Room: Central Hall - Session SS-TuP 

Surface Science Poster Session 

6:00 pm 

SS-TuP1 MORTON S. TRAUM AWARD FINALIST: Quantum Tunneling Driven 

Assembly and Diffusion of Hydrogen and Deuterium on Cu(111), A.D. JEWELL*, 

Tufts University, G. PENG, University of Wisconsin Madison, G. KYRIAKOU, Tufts University, M. 

MAVRIKAKIS, University of Wisconsin Madison, C.H. SYKES, Tufts University 

SS-TuP2 MORTON S. TRAUM AWARD FINALIST: Coverage-Dependent 

Interfacial Electronic Structures of Thiophenol and p-Fluorothiophenol on 

Cu(111), S.-Y. HONG*, P.-C. YEH, J. DADAP, R.M. OSGOOD, Columbia University 

SS-TuP3 MORTON S. TRAUM AWARD FINALIST: Understanding Molecular 

Adsorption on Graphene-based Hybrid Nanostructures by In Situ Infrared 

Microspectroscopy, E. MATTSON*, S. CUI, K. PANDE, H. PU, M. SCHOFIELD, G. LU, M. 

WEINERT, M. GAJDARDZISKA-JOSIFOVSKA, J. CHEN, C. HIRSCHMUGL, University of 

Wisconsin Milwaukee 

SS-TuP4 MORTON S. TRAUM AWARD FINALIST: Layer-by-Layer Assembly 

of Organic Molecular Donor-Acceptor Heterojunctions on Vicinal Gold 

Surfaces, J. WANG*, J.-M. TANG, G.P. MILLER, K. POHL, University of New Hampshire 

SS-TuP5 MORTON S. TRAUM AWARD FINALIST: Synthesis and 

Characterization of Yttrium Aluminum Garnet and Lanthanum Zirconate 

Particles, R.R. HARL*, S.L. GOLLUB, G. WALKER, B.R. ROGERS, Vanderbilt University 

SS-TuP6 The Influence of the Magnetic Field on the Photo-Functional Property 

of TiO2/Ni/TiO2 Thin Films Prepared by Sputtering, A. TOYODA, I. TAKANO, 

Kogakuin University, Japan 

SS-TuP7 Photo-function Property of TiO2/Cu2O Thin Films by Reactive 

Magnetron Sputtering, T. NAKAJIMA, I. TAKANO, S. ARAHARA, Kogakuin University, Japan 

SS-TuP8 Atomic Arrangements and Structural Stability of the Mn Adsorbed 

GaAs(001) Surfaces, A. HAGIWARA, The University of Electro-Communications (UEC- 

Tokyo), Japan, A. OHTAKE, National Institute for Materials Science (NIMS), Japan, Y. KANNO, S. 

YASUMURA, J. NAKAMURA, The University of Electro-Communications (UEC-Tokyo), Japan 

SS-TuP9 Facets and Surfaces Observed on Si(5 5 12) Studied by using Ultra- 

High-Vacuum Scanning Tunneling Microscopy, S.-G. ZHAO, Y. LI, Y.-B. SONG, Y.-Z. 

ZHU, Yanbian University, China, J.M. SEO, Chonbuk National University, Republic of Korea, S. 

ZHANG, Z.-P. GUO, Yanbian University, China 

SS-TuP10 Photoelectron Spectroscopy and Valence Band Studies of Non- 

Stoichiometric Superconducting FeSe1-xTex, L. HUERTA, V. ORTÍZ, Universidad 

Nacional Autonoma de Mexico, M. FLORES, Universidad de Guadalajara, Mexico, R. ESCAMILLA, 

Universidad Nacional Autonoma de Mexico 

SS-TuP11 Photovoltaic Property of Cu2O/Cu/TiO2 Thin Films Prepared by 

Reactive Magnetron Sputtering, Y. SUZUKI, I. TAKANO, Kogakuin University, Japan 

SS-TuP12 Measurement of pH Induced Transition in Redox Potential for 

Cerium Oxidation States in Nanoceria, S. SARAF, University of Central Florida, A.S. 

KARAKOTI, Pacific Northwest National Laboratory, S. BARKAM, S.S. SEAL, University of Central 

Florida 

SS-TuP13 XPS and STM Studies of Metal Dopant-Ceria Mixed Oxide 

Interfaces, J. ZHOU, E. GINTING, University of Wyoming, Y.H. ZHOU, Xiamen University, China 

SS-TuP14 Phosphonic Acids for Surface Initiated Polymerization from Oxide 

Nanoparticles and Flat Surfaces: Towards Applications in Organic Electronics, 

S.A. PANIAGUA, Y. KIM, N. DOUBINA, Georgia Institute of Technology, C.K. LUSCOMBE, 

University of Washington, J.W. PERRY, S.R. MARDER, Georgia Institute of Technology 

SS-TuP15 Determination of Active Surface Region in Pure and Modified TiO2 

Photocatalysts, T. LUTTRELL, J. TAO, M. BATZILL, University of South Florida 

SS-TuP16 Basic Regimes and Reaction Mechanisms of Chemicurrent 

Generation during H2 Oxidation on Catalytic MIM Nanostructures with Porous 

TiO2 Support, M. HASHEMIAN, S. DASARI, E. KARPOV, University of Illinois at Chicago 

SS-TuP17 Photo-patternable Superhydrophobic Porous TiO2 Films Prepared by 

Hydrothermal Treatment, S. NISHIMOTO, M. BECCHAKU, Y. KAMESHIMA, M. MIYAKE, 

Okayama University, Japan 

SS-TuP18 High Hydrophobic Surface with Metabolic System using Organic 

Monolithic Structure, M. SAKAI, Kanagawa Academy of Science and Technology, Japan, T. 

KATO, A. NAKAJIMA, Tokyo Institute of Technology, Japan, A. FUJISHIMA, Science University of 

Tokyo, Japan 

SS-TuP19 Adsorption of Water on a Hydrophobic Sb(111) Surface, A. 

CHAKRADHAR, J. SHAN, Z. YU, U. BURGHAUS, North Dakota State University 

SS-TuP20 Insulating Si(111) Surfaces by Organic Fluorine Compound 

Molecular Monolayer, F.Y. TIAN, A.V. TEPLYAKOV, University of Delaware 



129 

SS-TuP21 Methanol Induced Nanopatterning of Si(111):H – Insights from 

Density Functional Calculations, P. THISSEN, T. PEIXOTO, K. ROODENKO, University of 

Texas at Dallas, E. FUCHS, Zyvex Labs LLC, W.G. SCHMIDT, University of Paderborn, Germany, 

Y.J. CHABAL, University of Texas at Dallas 

SS-TuP22 Reactivity of Propane on Pd Oxide Phases Prepared by Surface 

Oxidation vs. Reduction, C. HAKANOGLU, J.F. WEAVER, University of Florida 

SS-TuP23 Structural Properties of TbOx Thin Films Grown on Cu(111), W.S. 

CARTAS, Univeristy of Florida, T.E. MILSTREY, J.F. WEAVER, University of Florida 

SS-TuP24 Modeling of Chemical Reaction – Induced Thermal Currents in Metal 

Nanofilm – Semiconductor Schottky Diodes, I. NEDRYGAILOV, University of Duisburg- 

Essen, Germany, E. KARPOV, University of Illinois at Chicago, E. HASSELBRINK, D. DIESING, 

University of Duisburg-Essen, Germany 

SS-TuP25 Synthesis, Characterization and Catalytic Activity of Pt Nanoparticles 

Supported on γ-Al2O3 and WC: Size and Support Effects, M. AHMADI, L. MERTE, 

B. ROLDAN CUENYA, University of Central Florida 

SS-TuP26 Ligand Functionalized Cerium Oxide Nanoparticles - Investigating 

the Mode and Energetics of Binding, A.S. KARAKOTI, Z. LU, W. WANG, P. 

NACHIMUTHU, H. WANG, P. YANG, S. THEVUTHASAN, Pacific Northwest National Laboratory 

SS-TuP27 In Situ Coarsening Study of Micellar Pt Nanoparticles Supported on 

γ-Al2O3: Pretreatment and Environmental Effects, J. MATOS, L.K. ONO, F. 

BEHAFARID, J.R. CROY, S. MOSTAFA, University of Central Florida, A.T. DELARIVA, A. DATYE, 

University of New Mexico, A.I. FRENKEL, Yeshiva University, B. ROLDAN CUENYA, University of 


SS-TuP28 Synthesis, Characterization and Reactivity of Cu-Zn and Cu-Pd 

Bimetallic Nanoparticles, H. MISTRY, L. MERTE, B. ROLDAN CUEYNA, University of Central 

Florida 

SS-TuP29 CO Oxidation over Au/TiO2 Model Catalyst, T. FUJITANI, I. NAKAMURA, 

AIST, Japan 

SS-TuP30 Active Sites for H2 Dissociation on Gold Model Catalyst, I. NAKAMURA, 

T. FUJITANI, AIST, Japan 

SS-TuP31 Image Potential State Mediated Excitation of Rubrene on Graphite, J. 

PARK, Seoul National University, Republic of Korea, T. UEBA, L. TERAWAKI, T. YAMADA, H. 

KATO, T. MUNAKATA, Osaka University, Japan 

SS-TuP32 Tribological Properties in a Vacuum of DLC Thin Films Prepared by 

N2 + Ion Beam Assisted Deposition, H. NISHI, K. HARADA, I. TAKANO, Kogakuin 


SS-TuP33 Electronic Structure and Electron-Phonon Coupling of Au/Mo(112), K. 

FUKUTANI, University of Nebraska-Lincoln, H. HAYASHI, Hiroshima University, Japan, N. 

LOZOVA, Louisiana State University, H. IWASAWA, Hiroshima University, Japan, I.N. YAKOVKIN, 

National Academy of Sciences of Ukraine, K. SHIMADA, Hiroshima University, Japan, P.A. 

DOWBEN, University of Nebraska-Lincoln 

SS-TuP34 Atomic Structure of the Bi-induced (1×3) Surface Reconstruction on 

GaAs(001), A. DUZIK, J.C. THOMAS, A. VAN DER VEN, University of Michigan, N.A. MODINE, 

Sandia National Laboratories, J.M. MILLUNCHICK, University of Michigan 

SS-TuP35 Spectroscopic Study of the Chemical Reaction at the Ca/PMMA 

Interface, H.X. JU, J.-H. ZHU, University of Science and Technology of China 

SS-TuP36 Mass Ratio Effects in Hyperthermal Surface Scattering, D. KULKARNI, 

C.E. SOSOLIK, Clemson University 

SS-TuP37 Ag Nanoparticles on Reducible CeO2(111) Thin Films: Effect of 

Nanoscale Ceria, S.W. HU, X.F. FENG, D.D. KONG, D.L. CHENG, Y.F. YE, J.-H. ZHU, 

University of Science and Technology of China 

SS-TuP38 The Adsorption of CO and CO2 on Silica Supported CuOx Nano- 

Clusters, J. SHAN, A. CHAKRADHAR, M. KOMARNENI, U. BURGHAUS, North Dakota State 

University


Room: Central Hall - Session TR-TuP 

Tribology Poster Session 

6:00 pm 

TR-TuP1 Nanomechanical and Nanotribological Responses of Si/SiO2 

Interfaces, F.-Y. LIN, X. SUN, D.E. YILMAZ, S.R. PHILLPOT, S.B. SINNOTT, University of 

Florida 

TR-TuP2 Origin of a Broad Band Emission in Triboluminescence during Friction 

between Diamond and Quartz in a Gas: Contribution of a Micro-discharge 

caused by Triboelectricity, T. MIURA, National Institute of Occupational Safety and Health, 

Japan, E. IMAI, I. ARAKAWA, Gakushuin University, Japan 

TR-TuP3 Frictional Study of Carbon Nanotube Arrays Grown on Artificial Hip 

Joint Metal Surfaces, M. YOSHIMURA, K. SUMIYA, Toyota Technological Institute, Japan 

TR-TuP4 Microhardness of Coatings Based on Titanium Nitride and Silicon 

Nitride Produced by DC Magnetron Sputtering, J.A. HUARANGA, Universidad 

Nacional de Ingeniería, Lima, Perú, C. BENNDORF, Hamburg University, Germany, A.F. TALLEDO, 

Universidad Nacional de Ingeniería, Lima, Perú 

TR-TuP5 Tribocorrosion behaviour of ZrN Multilayer Coatings Deposited by 

Magnetron Sputtering onto Ti6Al4V Substrate Alloy, O. JIMENEZ-ALEMAN, M. 

FLORES-MARTINEZ, E. RODRIGUEZ DE ANDA, J. REYES-MORALES, Universidad de 

Guadalajara, Mexico 

TR-TuP6 Comparative Study of Tribocorrosion Behavior of Biomedical Alloys 

Coated with Metal-Ceramic Multilayers, M. FLORES, O. JIMENEZ, E. RODRIGUEZ, 

Universidad de Guadalajara, Mexico, L. HUERTA, Universidad Nacional Autonoma de Mexico 

TR-TuP7 Analysis of Coatings in Matrix of Conformation Fasteners in Stainless 

Steel Austenitic, W. MATTES, Centro Universitário Catolica de Santa Catarina, Brazil, J.M.F. 

PAIVA JUNIOR, SENAI-SC, Brazil, T. UTECH, Centro Universitário Catolica de Santa Catarina, 

Brazil, N.K. DIAS, SENAI-SC, Brazil 

* VT Student-Built Vacuum Systems Poster Competition 



Room: Central Hall - Session VT-TuP 

Vacuum Technology Poster Session and Student-built Vacuum 

System Poster Competition 

6:00 pm 

VT-TuP1 Quantitative Evaluation Method of Mixture Gas with Impurity of PPM 

Level in Vacuum Process, J.-T. KIM, J.-Y. YUN, KRISS, Republic of Korea 

VT-TuP2 Pressure Effects in Autoresonant Ion Trap Mass Spectrometers 

(ARTMS), P. ACOMB, G.A. BRUCKER, J. RATHBONE, Brooks Automation, Inc., Granville- 

Phillips Products 

VT-TuP3 Investigation of a Method for Measurement of Water Vapor Coverage 

on Technical Surfaces, M. SEFA*, Laboratory Lotric d.o.o., Slovenia, J. ŠETINA, Institute of 

Metals and Technology, Slovenia 

VT-TuP4 Flow of a Binary Gas Mixture Into Vacuum: Experiment, Models, 

Simulation, M. VUKOVIC, Tokyo Electron, US Holdings, R. JOHNSEN, University of Pittsburgh 

VT-TuP5 A Calibration System for Helium Leak Calibrator, Y.-W. LIN, C.-C. HUNG, 

C.-P. LIN, C.-N. HSIAO, F.-Z. CHEN, Instrument Technology Research Center, Taiwan 

VT-TuP6 Status of the FRIB Vacuum System Design, P. GIBSON, B. DURICKOVIC, P. 

GUETSCHOW, FRIB, R. KERSEVAN, CERN, M. LEITNER, D. LEITNER, L. LINGY, F. MARTI, G. 

MORGAN, FRIB, D. SANDERSON, NSCL, M. SCHEIN, M. SHUPTAR, FRIB 

VT-TuP7 PLS-II Vacuum System Commissioning, C.D. PARK, S. CHUNG, T. HA, C.K. 

KIM, M.S. HONG, H.C. KWON, Y.D. JOO, Pohang University of Science and Technology, Republic 

of Korea 

VT-TuP8 An Application of Electron Stimulated Desorption Technique to 

Measure the Isotherm and the Mean Residence Time of Hydrogen 

Physisorbed on a Metal Surface, H. SHIMIZU*, N. INOSE, T. MIURA, I. ARAKAWA, 

Gakushuin University, Japan 

VT-TuP9 Radiative Heating from a Magnetically Levitated Turbo Pump, H. BULL*, 

CNSE, A. ANTOHE, SEMATECH, G. KANE, G. DENBEAUX, CNSE 

VT-TuP10 Novel Light Sputter Ion Pump with Neodymium Iron Boron Magnets 

and the Low Outgassing Body, T. HA, S. CHUNG, C.D. PARK, Pohang University of 

Science and Technology, Republic of Korea 

VT-TuP11 Expanded Capability of Measuring Pumping Speed of Dry Vacuum 

Pumps Using Calibrated Sonic Nozzles, W.S. CHEUNG, S.H. NAM, W.J. KIM, J.Y. LIM, 

KRISS, Korea 

VT-TuP12 Study on Improvement of Predictive Maintenance of Dry Vacuum 

Pumps Using an Adaptive Parametric Model of State Variables, S.H. NAM*, W.J. 

KIM, J.Y. LIM, W.S. CHEUNG, KRISS, Korea 

VT-TuP13 Modeling of Energy Consumption Characteristics of Low Vacuum 

Dry Pumps, W.J. KIM*, S.H. NAM, W.S. CHEUNG, KRISS, Republic of Korea, M.K. KO, 

Konyang University, Republic of Korea, J.Y. LIM, KRISS, Republic of Korea 

VT-TuP14 Dry Vacuum Pump, J.Y. LIM, W.J. KIM, S.H. NAM, KRISS, Republic of Korea, S.Y. 

IN, Korea Atomic Energy Research Institute, Republic of Korea, D.Y. KOH, Korea Institute of 

Machinery and Materials, Republic of Korea, W.S. CHEUNG, KRISS, Republic of Korea 

VT-TuP16 An Evaluation of the Outgassing Rates of Stainless Steel Vacuum 

Chambers Subjected to Different Heat Treatments and Coatings, M.A. MAMUN*, 

Old Dominion University, P.A. ADDERLEY, M.L. STUTZMAN, M. POELKER, Thomas Jefferson 

National Accelerator Facility 

VT-TuP17 A Quantitate Examination of Venting Trapped Volumes Due to 

Fasteners, C. BRYSON, Apparati Inc. 

130

WEDNESDAY SPECIAL EVENTS 

6:15 a.m. 32nd Annual AVS Run—Bayshore Sidewalk (H) 



12:00 p.m. Exhibit Hall Lunch—West Exhibit Hall (CC) 

12:00 p.m. Nanometer-Scale Science and Technology Division Public Student Award Competition—12 (CC) 

3:20 p.m. Session Refreshment Break—West Exhibit Hall (CC) 

4:30 p.m. E&M Reception (Invitation Only)—West Exhibit Hall (CC) 

4:40 p.m. Medard Welch Award Lecture, Y.J. Chabal, The Univ. of Texas at Dallas—22 (CC) 

6:15 p.m. AVS Awards Ceremony—Ballroom B (CC) 

7:15 p.m. AVS Awards Reception—Florida Ballroom (H) 


10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 

12:20 p.m.-2:00 p.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 




WEDNESDAY SHORT COURSES 


8:30 a.m. Composition Depth Profiling 



8:30 a.m. Plasma Etching & RIE: Fundamentals & Applications 

8:30 a.m. Scanning Electron Microscopy and X-ray Microanalysis 



131

Wednesday Morning, October 31, 2012 


Room: 20 - Session AS-WeM 

Surface Analysis of Biological Materials Using Vibrational & 

Non Linear Optical Spectroscopy Techniques (8:00-10:00 am) / 

3D Imaging & Nanochemical Analysis-Part 1 (10:40 am-12:00 pm) 

Moderators: R.P. Richter, CIC biomaGUNE & MPI for Intelligent 

Systems, Spain, D. Roy, National Physical Laboratory, UK, 

V.S. Smentkowski, General Electric Global Research Center 

8:00 am AS-WeM1 Invited 

Fibril Formation within the Extracellular Matrix, from Preventing Bacterial 

Infections to Artificial Tissue Generation, P. KOELSCH, University of Washington 


Room: 23 - Session BI+SS+NS-WeM 

Bio/Nano Interfaces with Applications in Biomedicine and 

Energy 

Moderator: G.J. Leggett, University of Sheffield, UK 

BI+SS+NS-WeM1 Combining Colloidal Lithography and Photolithography to 

Create Dual Length-Scale Topographical Features to Study Stem Cell 

Behavior, D.T. BENNETSEN, D.C.E. KRAFT, R. OGAKI, M. FOSS, Aarhus University, 

Denmark 

8:20 am Invited talk continued. BI+SS+NS-WeM2 Genetically Modified Tobacco Mosaic Virus (TMV)-based 

Electrochemical Detection of 2, 4, 6-trinitrotoluene (TNT), F. ZANG, H. BEN- 

YOAV, X. FAN, A. BROWN, J. CULVER, R. GHODSSI, University of Maryland 

8:40 am AS-WeM3 In Situ Monitoring of SDS Adsorption on Positively Charged 

Surfaces, S.-H. SONG, P. KOELSCH, T. WEIDNER, University of Washington, M.S. 

WAGNER, The Procter & Gamble Company, D.G. CASTNER, University of Washington 


Enhanced Infrared Spectroscopy and Near-Field Microscopy with 

Infrared Antennas, T. TAUBNER, RWTH Aachen University, Germany 

BI+SS+NS-WeM3 Invited 

Nanoparticles in Biology: Engineering the Interface for Sensing and 

Delivery, V. ROTELLO, University of Massachusetts 


9:20 am Invited talk continued. BI+SS+NS-WeM5 Hydrophobic Forces, Electrostatic Steering, and Acid– 

Base Bridging between Atomically Smooth Self-Assembled Monolayers 

and End-Functionalized PEGolated Lipid Bilayers, M. VALTINER, Max-Planck- 

Institut fur Eisenforschung, Germany, S.H. DONALDSON, M.A. GEBBIE, J.N. 

ISRAELACHVILI, University of California, Santa Barbara 

9:40 am AS-WeM6 FT-IR Spectrochemical Imaging: Applications with Focal Plane 

Array and Multiple Beam Synchrotron Radiation Source, M. UNGER, E. 

MATTSON, J. SEDLMAIER, Z. ALAVI, R. DSOUZA, B. MANANDAR, C. HIRSCHMUGL, 

University of Wisconsin Milwaukee 

BI+SS+NS-WeM6 Viral Encapsulation in Lecithin Liposomes to Enhance 

the Therapeutic Effect of Oncolytic Viral Therapy, N. MENDEZ, V. HERRERA, 

A.C. KUMMEL, University of California San Diego 




3D Analysis using X-ray Computed Tomography, S.R. STOCK, Northwestern 

University 

BI+SS+NS-WeM9 Engineering Bio-Interfaces using Electric Field-Induced 

Nanolithography, S. ZAUSCHER, R.J. FERRIS, B. YELLEN, Duke University 

11:00 am Invited talk continued. BI+SS+NS-WeM10 Supramolecular Bioassemblies at Solid-Liquid 

Interfaces: Binding Control through Redox-Driven Multivalent Host- 

Guest Interactions, G.V. DUBACHEVA, CIC biomaGUNE, Spain, L. GUERENTE, D. 

BOTURYN, Joseph Fourier University, France, R. AUZÉLY, CERMAV, France, R.P. 

RICHTER, CIC biomaGUNE, Spain; Joseph Fourier University, France; Max Planck Institute 

11:20 am AS-WeM11 High Spatial Resolution 2D and 3D TOF-SIMS Analysis using 

Cluster Ion Beams, F. KOLLMER, S. KAYSER, ION-TOF GmbH, Germany, N. 

HAVERCROFT, ION-TOF USA, Inc., D. RADING, R. MOELLERS, W. PAUL, E. NIEHUIS, 

ION-TOF GmbH, Germany 

11:40 am AS-WeM12 An Evolution of TOF-SIMS for Biological Analysis: From 2D 

Imaging to 3D FIB-TOF Tomography, G.L. FISHER, J.S. HAMMOND, S.R. 

BRYAN, Physical Electronics 

for Intelligent Systems, Germany, P. LABBÉ, Joseph Fourier University, France 

BI+SS+NS-WeM11 High-resolution In Situ Electrochemical STM Imaging of 

Phospholipid Model Cell Membrane, H. SHIMIZU, S. MATSUNAGA, University of 

Tokyo, Japan, T. YAMADA, T. KOBAYASHI, RIKEN, Japan, M. KAWAI, University of Tokyo, 

Japan 

132 

BI+SS+NS-WeM12 Characterization of Polymer/Drug Films as Model for 

Drug Eluting Coronary Stent Coating Layers, V. CIARNELLI, M.R. 

ALEXANDER, M.C. DAVIES, C.J. ROBERTS, University of Nottingham, UK


Room: 9 - Session EM+TF-WeM 

Hybrid Electronic Materials and Interfaces 

Moderators: M.R. Linford, Brigham Young University, 

A.J. Muscat, University of Arizona 

8:00 am EM+TF-WeM1 Invited 

Versatile Electron Beam Chemical Lithography on the Basis of 

Monomolecular Films, M. ZHARNIKOV, University of Heidelberg, Germany 


8:40 am EM+TF-WeM3 Covalently Linked Organic Monolayers on Silicon Surfaces: 

Making Them Better, Stronger, Faster!, H. ZUILHOF, Wageningen University, 

Netherlands 

9:00 am EM+TF-WeM4 Probing the Intrinsic Organic/Semiconductor Interface, W. 

PENG, O. SEITZ, R. CHAPMAN, University of Texas at Dallas, E.M. VOGEL, Georgia 

Institute of Technology, Y.J. CHABAL, University of Texas at Dallas 

9:20 am EM+TF-WeM5 Towards Organic Electronics: Methods for the Selective 

Deposition of Semiconductors and Metals, J. YANG, Z. SHI, K. BORNER, A.V. 

WALKER, University of Texas at Dallas 

9:40 am EM+TF-WeM6 Electroless Deposition of Co on SiO2 Surfaces Modified by 

an Aminosilane Self-Assembled Monolayer, R. JAIN, A. NG, E. WHITE, A.J. 

MUSCAT, University of Arizona 


Room: 15 - Session EN+PS-WeM 

Plasmas for Photovoltaics and Energy Applications 

Moderator: J.-P. Booth, LPP-CNRS, Ecole Polytechnique, France 

EN+PS-WeM1 Invited 

Electron Driven C1-chemistry: Direct Conversion of Methane to Synthetic 

Fuels, T. NOZAKI, Tokyo Institute of Technology, Japan 

EN+PS-WeM3 Plasma-assisted CO2 Conversion as Candidate Element in 

Future Solar Fuel Economy, S. WELZEL, S. PONDURI, F. BREHMER, M. MA, 

M.C.M. VAN DE SANDEN, R. ENGELN, Eindhoven University of Technology, the 

Netherlands 

EN+PS-WeM4 Novel Processing Routes of Silicon Nanocrystals in a 

Remote Expanding Thermal Plasma for Photovoltaic Applications, I. 

DOGAN*, Eindhoven University of Technology, Netherlands, S.L. WEEKS, Colorado School 

of Mines, K. DOHNALOVA, T. GREGORKIEWICZ, University of Amsterdam, Netherlands, S. 

AGARWAL, Colorado School of Mines, M.C.M. VAN DE SANDEN, Dutch Institute for 

Fundamental Energy Research, Netherlands 

EN+PS-WeM5 Invited 

Growth of Microcrystalline Silicon using Tailored Voltage Waveform 

Driven Plasma Processes: From Materials to PV Devices, E.V. JOHNSON, 

LPICM-CNRS, Ecole Polytechnique, France, S. POULIQUEN, P.A. DELATTRE, J.-P. 

BOOTH, LPP-CNRS, Ecole Polytechnique, France 




10:40 am EM+TF-WeM9 Invited 

Polymer-Colloidal Nanocrystal Hybrid Materials for Photovoltaic 

Applications, J. XUE, R. ZHOU, P.H. HOLLOWAY, University of Florida 

EN+PS-WeM9 Measurement and Control of Ion Energies in Dual 

Frequency Capacitive Hydrogen Discharges, E. SCHUENGEL, S. MOHR, J. 

SCHULZE, U. CZARNETZKI, Ruhr-University Bochum, Germany 

11:00 am Invited talk continued. EN+PS-WeM10 Raman Study of the Properties of Free Standing Silicon 

Nanocrystals Using Laser Induced Thermal Heating, L. HAN, A.H.M. SMETS, 

M. ZEMAN, Delft University of Technology, Netherlands 

11:20 am EM+TF-WeM11 Obtention of Deterministic Patterns through Wrinkling 

Formation, J.L. YAGUE, J. YIN, D. EGGENSPIELE, M.C. BOYCE, K.K. GLEASON, 

Massachusetts Institute of Technology 

11:40 am EM+TF-WeM12 Surface Dynamics of Hybrid Silicon Interfaces Explored via 

Helium Atom Scattering, Z.M. HUND, R.D. BROWN, University of Chicago, L.E. 

O'LEARY, California Institute of Technology, D. CAMPI, M. BERNASCONI, G. BENEDEK, 

Universitả di Milano-Bicocca, Italy, N.S. LEWIS, California Institute of Technology, S.J. 

SIBENER, University of Chicago 



133 

EN+PS-WeM11 Fabrication of 3D Array Si Quantum Dots Superlattice 

using Biotemplate and Neutral Beam Etching, M.E. FAUZI, M. IGARASHI, W. 

HU, S. SAMUKAWA, Tohoku University, Japan 

EN+PS-WeM12 Two-dimensional Simulations of Hydrogen and 

Hydrogen/Silane Capacitively Coupled Dual Frequency Discharges, S. 

MOHR, E. SCHUENGEL, J. SCHULZE, U. CZARNETZKI, Ruhr University Bochum, 

Germany



Room: West Hall - Session EW-WeM 




Room: 13 - Session GR+AS+BI+PS+SS-WeM 

Graphene Surface Chemistry, Functionalization, Biological 

and Sensor Applications 

Moderator: D.K. Gaskill, U.S. Naval Research Laboratory 

8:00 am GR+AS+BI+PS+SS-WeM1 Structural Analysis of Chemically Functionalized 

Epitaxial Graphene with High-Resolution X-ray Reflectivity, J.D. EMERY, 

Q.H. WANG, M. ZARROUATI, Northwestern University, P. FENTER, Argonne National 

Laboratory, M.C. HERSAM, M.J. BEDZYK, Northwestern University 

8:20 am GR+AS+BI+PS+SS-WeM2 In Situ FT-IR Study of Graphene Fluorination 

using XeF2, J.-F. VEYAN, N. SHAFIQ, University of Texas at Dallas, K. NOVOSELOV, 

University of Manchester, UK, Y.J. CHABAL, University of Texas at Dallas 

8:40 am GR+AS+BI+PS+SS-WeM3 Invited 

Molecularly Resolved Chemical Functionalization of Graphene, M.C. 

HERSAM, Northwestern University 


9:20 am GR+AS+BI+PS+SS-WeM5 Label-Free Biosensing with Graphene FETs, R. 

STINE, J.T. ROBINSON, S.P. MULVANEY, P.E. SHEEHAN, C.R. TAMANAHA, U.S. Naval 


9:40 am GR+AS+BI+PS+SS-WeM6 Structure of a Peptide Adsorbed on Graphene and 

Graphite, J. KATOCH, University of Central Florida, S.N. KIM, Z. KUANG, B.L. FARMER, 

R.R. NAIK, Air Force Research Laboratory, S.A. TATULIAN, M. ISHIGAMI, University of 



10:20 am EW-WeM8 Mass Spectrometer Now Supports Process Control, S. LASS, 


BREAK - Complimentary Coffee in Exhibit Hall 

10:40 am GR+AS+BI+PS+SS-WeM9 Controlling the Spatial Distribution of Graphene 

Chemistry, S.C. HERNÁNDEZ, E.H. LOCK, S.G. WALTON, C.J. BENNETT, R. STINE, 

P.E. SHEEHAN, F.J. BEZARES, L.O. NYAKITI, R.L. MYERS-WARD, J.T. ROBINSON, J.D. 

CALDWELL, C.R. EDDY, JR., D.K. GASKILL, Naval Research Laboratory 

11:00 am GR+AS+BI+PS+SS-WeM10 Coverage-dependent Ordering of Adsorbed Iron 

Phthalocyanine on Epitaxial Graphene Grown on SiC(0001)-Si, A.A. 

SANDIN, D.B. DOUGHERTY, J.E. ROWE, North Carolina State University 

11:20 am GR+AS+BI+PS+SS-WeM11 Invited 

A Molecular Route to Carbon Nanomembranes, Graphene and Their 

Hybrids with Tailored Physical and Chemical Properties, A. TURCHANIN, 

University of Bielefeld, Germany 


134


Room: 7 - Session IS+AS+OX+ET-WeM 

In Situ Characterization of Solids: Film Growth, Defects, and 

Interfaces 


Room: 6 - Session MI-WeM 

8:00 am 

Moderator: P.W. Sutter, Brookhaven National Laboratory 

IS+AS+OX+ET-WeM1 Revealing Gas-Surface Radical Reaction 

Topological Insulators and Rashba 

Moderators: M. Donath, Muenster University, Germany, 

E. Vescovo, Brookhaven National Laboratory 

MI-WeM1 UP or DOWN? Rashba-type Spin Structures in sp- and d- 

Mechanisms of Self-Assembled Monolayers by Scanning Tunneling derived Surface States Below and Beyond the Fermi Level, M. DONATH, 

Microscopy, D.Y. LEE, M.M. JOBBINS, S.A. KANDEL, University of Notre Dame 

S.D. STOLWIJK, A. ZUMBÜLTE, S.N.P. WISSING, CH. LANGENKÄMPER, A.B. SCHMIDT, 

P. KRÜGER, Muenster University, Germany, K. MIYAMOTO, K. SHIMADA, A. KIMURA, 

Hiroshima University, Japan, K. SAKAMOTO, Chiba University, Japan, R.C. HATCH, P. 

HOFMANN, Aarhus University, Denmark 

8:20 am IS+AS+OX+ET-WeM2 In Situ Imaging of the Nucleation and Growth of MI-WeM2 Scanning Tunneling Spectroscopy of Topological Insulators’ 

Epitaxial Anatase TiO2(001) Films on SrTiO3(001), Y.G. DU, D.J. KIM, T.C. Electrically Tunable Electronic Structure, N. LEVY, Center for Nanoscale Sci. and 

KASPAR, Pacific Northwest National Laboratory, S.E. CHAMBERLIN, University of 

Tech. / NIST, T. ZHANG, Center for Nanoscale Sci. and Tech. / NIST and Maryland 

Wisconsin Milwaukee, I. LYUBINETSKY, S.A. CHAMBERS, Pacific Northwest National NanoCenter / Univ. of Maryland, J. HA, Center for Nanoscale Sci. and Tech. / NIST and 

Laboratory 

Seoul National Univ., Korea, Y. KUK, Seoul National Univ., Republic of Korea, J.A. 

STROSCIO, Center for Nanoscale Sci. and Tech. / NIST 

8:40 am IS+AS+OX+ET-WeM3 Invited 

MI-WeM3 Invited 

In Situ Synchrotron X-Ray Studies of Epitaxial Oxide Thin Film 

Synthesis Behavior, J.A. EASTMAN, M.J. HIGHLAND, P.H. FUOSS, Argonne National 

Laboratory, T.M. MCCLESKEY, Los Alamos National Laboratory, D.D. FONG, C.M. 

FOLKMAN, S.K. KEUN, E. PERRET, P.M. BALDO, Argonne National Laboratory, E. BAUER, 

Q. JIA, Los Alamos National Laboratory 

Exchange and Rashba Interactions in Thin Film Systems, P. MORAS, Istituto 

di Struttura della Materia-CNR, Trieste, Italy 


9:20 am IS+AS+OX+ET-WeM5 Solid-state Convection in Thin Films: Real-time 

Nanoscale Visualization, Z. WANG, Max Planck Institute for Intelligent Systems, 

Germany, L. GU, Max Planck Institute for Intelligent Systems; (Present) Chinese Academy of 

Sciences, L.P.H. JEURGENS, Max Planck Institute for Intelligent Systems; (Present) Swiss 

Federal Laboratories for Materials Science and Technology, F. PHILLIPP, E.J. 

MITTEMEIJER, Max Planck Institute for Intelligent Systems, Germany 

9:40 am IS+AS+OX+ET-WeM6 Understanding the Dynamic Electronic Properties of 

Electrode Materials by In Situ X-ray Absorption Spectroscopy, M. BAGGE- 

HANSEN, J.R.I. LEE, A. WITTSTOCK, M.D. MERRILL, M.A. WORSLEY, T. OGITSU, B.C. 

WOOD, T. BAUMANN, M. STADERMANN, M. BIENER, J. BIENER, T. VAN BUUREN, 

Lawrence Livermore National Laboratory 


Photoemission Studies of Spin-Orbit Effects in Graphene and 

Topological Insulators, O. RADER, Helmholtz-Zentrum Berlin für Materialien und 

Energie, Germany 




10:40 am IS+AS+OX+ET-WeM9 In Situ Studies of Al2O3 ALD Growth and Selfcleaning 

on III-V Surfaces by STM and XPS, L.N.J. RODRIGUEZ, A. DE 

CLERCQ, IMEC, Belgium, M. TALLARIDA, BTU Cottbus, Germany, D. CUYPERS, IMEC, 

Belgium, J.P. LOCQUET, KU Leuven, Belgium, S. VAN ELSHOCHT, C. ADELMANN, M. 

CAYMAX, IMEC, Belgium 

11:00 am IS+AS+OX+ET-WeM10 In Situ Transport Measurement of Kinetically 

Controlled Bi Atomic Layers, Y. FUJIKAWA, E. SAITOH, Tohoku University, Japan 

11:20 am IS+AS+OX+ET-WeM11 CAMECA IMS Series Advanced Ion Microscopy: 

High Throughput, Repeatability & Automation, P. PERES, F. DESSE, F. 

HILLION, M. SCHUHMACHER, Cameca, S.a., France, A.N. DAVIS, CAMECA Instruments, 

Inc. 

11:40 am 


135 


Electronic Scattering on Surfaces of Topological Insulators, T. VALLA, 

Brookhaven National Laboratory 


MI-WeM11 Scanning Tunneling Microscopy Observation of the 

Superconducting Gap in CuxBi2Se3, J. HA, Center for Nanoscale Sci. and Tech. / 

NIST and Seoul National Univ., N. LEVY, Center for Nanoscale Sci. and Tech. / NIST, T. 

ZHANG, Center for Nanoscale Sci. and Tech. / NIST and Maryland NanoCenter / Univ. of 

Maryland, R.L. KALLAHER, F. SHARIFI, A.A. TALIN, Center for Nanoscale Sci. and Tech. / 

NIST, Y. KUK, Seoul National Univ., Republic of Korea, J.A. STROSCIO, Center for 

Nanoscale Sci. and Tech. / NIST


Room: 12 - Session NS+AS+SS+SP-WeM 

Nanoscale Catalysis and Surface Chemistry 

Moderator: U.D. Schwarz, Yale University 


Room: 24 - Session PS+TC-WeM 

Atmospheric Plasma Processing for PV, Flexible Electronics 

(incl. R2R) 

Moderator: S.A. Vitale, MIT Lincoln Laboratory 

8:00 am PS+TC-WeM1 Formation Dynamics and Characterization of Organosilicon 

Powders in Microwave-Sustained Plasmas at Atmospheric-Pressure, V. 

ROY-GAROFANO, A. KILICASLAN, O. LEVASSEUR, L. STAFFORD, M. MOISAN, 

Universite de Montreal, Canada, C. CÔTÉ, A. SARKISSIAN, Plasmionique, Canada 

8:20 am NS+AS+SS+SP-WeM2 Preparation and Performance of Solid Rocket 

Propellant Containing In Situ-Synthesized Nanoparticle Catalysts and 

Fuels, D. REID, R. DRAPER, University of Central Florida, M. JOHNSON, T. ALLEN, A. 

DEMKO, E. PETERSEN, Texas A&M University, S.S. SEAL, University of Central Florida 

8:40 am NS+AS+SS+SP-WeM3 Catalysts with Superior Catalytic Properties by 

Turning Gold Catalysis Upside Down: Oxide Particles on Nanoporous 

Gold, A. WITTSTOCK, Lawrence Livermore National Lab, A. WICHMANN, Univ. Bremen, 

Germany, M. BAGGE-HANSEN, Lawrence Livermore National Lab, K. FRANK, Univ. 

Bremen, Germany, M. BIENER, J. BIENER, Lawrence Livermore National Lab, A. 

ROSENAUER, M. BAEUMER, Univ. Bremen, Germany 

9:00 am NS+AS+SS+SP-WeM4 Synthesis and Catalytic Activity of WS2 Nanotube 

Supported Cobalt and Nickel Catalysts Towards Thiophene 

Hydrodesulfurization, M. KOMARNENI, Z. YU, A. CHAKRADHAR, U. BURGHAUS, 

North Dakota State University, Y. TSVERIN, R. POPOVITZ-BIRO, Y. FELDMAN, R. TENNE, 

Weizmann Institute of Science, Israel 

9:20 am NS+AS+SS+SP-WeM5 Invited 

Size-Selected Clusters as Model Catalysts for Heterogeneous 

Chemistry, M.G. WHITE, Brookhaven National Laboratory, Y. YANG, J. ZHOU, Stony 

Brook University, J. ZHOU, Brookhaven National Laboratory 

PS+TC-WeM2 Infrared Gas Phase Studies in High-Current Dielectric 

Barrier Discharges Applied in Roll-to-Roll Deposition of Silica-Like 

Layers at Atmospheric Pressure, S. WELZEL, Eindhoven University of Technology, 

Netherlands, S.A. STAROSTIN, H. DE VRIES, FUJIFILM Manufacturing Europe B.V., 

Netherlands, M.C.M. VAN DE SANDEN, R. ENGELN, Eindhoven University of Technology, 

Netherlands 

PS+TC-WeM3 Invited 

Atmospheric Pressure Plasma Processes for Preparation of Si-Based 

Thin Films, K. YASUTAKE, H. OHMI, T. YAMADA, H. KAKIUCHI, Osaka University, 

Japan 


PS+TC-WeM5 Deposition of Organic-Inorganic Nanocomposite Coatings 

by Aerosol-Assisted Atmospheric Pressure DBDs, F. FANELLI, Institute of 

Inorganic Methodologies and Plasmas (IMIP) - CNR, Bari, Italy, A.M. MASTRANGELO, F. 

FRACASSI, University of Bari Aldo Moro - IMIP CNR, Bari, Italy 

9:40 am Invited talk continued. PS+TC-WeM6 Diagnostic of Atmospheric-Pressure He Discharges 

Controlled by Dielectric Barriers in Presence of Complex Polymer 

Samples, O. LEVASSEUR, L. STAFFORD, Université de Montréal, Canada, N. 

GHERARDI, N. NAUDE, CNRS-Laplace, France 



10:40 am NS+AS+SS+SP-WeM9 Invited 

NSTD Recognition Award Lecture: High-Resolution Scanning Tunneling 

Microscopy Studies of Surface Reactions on Transition Metal Oxide 

Surfaces, F. BESENBACHER*, Aarhus University, Denmark 


11:20 am NS+AS+SS+SP-WeM11 Charge Exchange and Molecule/Metal Coupling in 

Fulvalene Surface Chemistry, G. ROJAS, B.G. SUMPTER, Oak Ridge National 

Laboratory, J.A. SCHLUETER, Argonne National Laboratory, P. MAKSYMOVYCH, Oak 

Ridge National Laboratory 

11:40 am NS+AS+SS+SP-WeM12 Subpicosecond-pulse Photoinduced Chemistry on 

Nanoscale Palladium Model Catalyst Surfaces, A. BHATTACHARYA, 

Brookhaven National Laboratory, R. PALOMINO, J.C. LOFARO, Stony Brook University, H. 

PARK, M.G. WHITE, N. CAMILLONE, Brookhaven National Laboratory 

* NSTD Recognition Award 

† Coburn & Winters Student Award Finalist 


136 

PS+TC-WeM9 Invited 

Modified Dielectric Barrier Discharges for Display Materials Processing, 

G.Y. KIM, Sungkyunkwan University, Korea, J.B. PARK, SKKU Advanced Institute of Nano 

Technology (SAINT), Korea, G.Y. YEOM, Sungkyunkwan University & SKKU Advanced 

Institute of Nano Technology (SAINT), Korea 

PS+TC-WeM11 Atmospheric Pressure Plasma Enhanced Chemical Vapor 

Deposition of Hydrophobic Thin Film Coatings Using Liquid Precursors, 

J. YIM, V. RODRIGUEZ-SANTIAGO, A. WILLIAMS, J. HIRVONEN, D. PAPPAS, U.S. Army 


PS+TC-WeM12 Etching of PTFE by Atmospheric Plasmas: Effect of the 

Gas Composition on the Reactions Processes and Hydrophobicity, J. 

HUBERT†, T. DUFOUR, N. VANDENCASTEELE, Université Libre de Bruxelles, Belgium, S. 

DESBIEF, R. LAZZARONI, Materia Nova Research Center, Belgium, F. RENIERS, 

Université Libre de Bruxelles, Belgium


Room: 25 - Session PS-WeM 

Advanced BEOL/Interconnect Etching 

Moderator: A. Agarwal, Applied Materials Inc. 

8:00 am PS-WeM1 Invited 

The Role and Impact of Metal Hard Masks on BEOL Etch Processes, C. 

LABELLE, R. SRIVASTAVA, R. KOSHY, T.Q. CHEN, F. WU, A.P. LABONTE, 

GLOBALFOUNDRIES, Y. MIGNOT, STMicroelectronics, M. BEARD, B.G. MORRIS, Y. YIN, 

IBM Systems and Technology Group 


Room: 16 - Session SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM 

Probe-Sample Interactions, Nano-Manipulation and 

Fabrication 


A.-P. Li, Oak Ridge National Laboratory 

8:20 am Invited talk continued. SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM2 Invited 

Controlled Coupling of Silicon Atomic Quantum Dots at Room 

Temperature: A Basis for Atomic Electronics?, R.A. WOLKOW, University of 

Alberta and The National Institute for Nanotechnology, Canada, J. PITTERS, The National 

Institute for Nanotechnology, Canada, G. DILABIO, M. TAUCER, P. PIVA, L. LIVADARU, 

8:40 am PS-WeM3 Evaluation of Chemistry Effects of Fluorcarbon Molecules for 

High Aspect Ratio Silicon Oxide Etch, C.M. ANDERSON, R. GUPTA, C. 

DUSSARRAT, Air Liquide 

9:00 am PS-WeM4 Dielectric RIE Challenges Associated to Trench First Metal 

Hard Mask at 64 nm Pitch and Below, Y. FEURPRIER, L. WANG, Tokyo Electron 

Tech. Center, America, LLC, S. NAKAMURA, Tokyo Electron Miyagi Ltd., Japan, J. 

STILLAHN, Y. CHIBA, K. KUMAR, Tokyo Electron Tech. Center, America, LLC, Y. MIGNOT, 

STMicroelectronics, E. SODA, Renesas Electonics, R. KOSHY, R. SRIVASTAVA, 

GLOBALFOUNDRIES, Y.J. PARK, Samsung Electronics Co. Ltd., J. ARNOLD, IBM 

Research Group 

9:20 am PS-WeM5 Interfacial Characterization of Patterned Porous Low-k 

Nanostructure using Infrared and X-ray Photoelectron Spectroscopy, S. 

RIMAL, N. ROSS, S. KOSKEY, T. MUKHERJEE, O. CHYAN, University of North Texas 

9:40 am PS-WeM6 Separation of Radical and Photon Effects on Nanoporous Lowk 

Films, J. LEE*, D.B. GRAVES, University of California Berkeley 

University of Alberta and The National Institute for Nanotechnology, Canada 


SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM4 Atomic Forces and Energy 

Dissipation of a Bi-Stable Molecular Junction, C. LOTZE, Freie Universtiät 

Berlin, Germany, M. CORSO, K.J. FRANKE, F.V. OPPEN, J.I. PASCUAL, Freie Universität 

Berlin, Germany 

SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM5 Acetylene on Cu(111): Imaging a 

Molecular Pattern with a Constantly Rearranging Tip, Y. ZHU, J. WYRICK, 

K.D. COHEN, K. MAGNONE, C. HOLZKE, D. SALIB, Q. MA, D.Z. SUN, L. BARTELS, 

University of California Riverside 

SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM6 Atomic Scale Imaging and Electronic 

Structure of Trimethylaluminum Deposition on III-V Semiconductor (110) 

Surfaces, T.J. KENT†, M. EDMONDS, E. CHAGAROV, A.C. KUMMEL, University of 

California San Diego 



10:40 am PS-WeM9 Diamond-like Amorphous Carbon Layer Deposited by 

Inductively Coupled Plasma System for Next Generation Dry Etching 

Hard Mask, S.J. PARK, W. KIM, G. CHOI, J. WON, Samsung Electronics Co. Ltd., 


11:00 am PS-WeM10 Evaluation of Novel Etch Gas for BEOL Interconnect Pattern 

Transfer at 14nm and 22nm Technologies, R.L. BRUCE, IBM T.J. Watson 

Research Center, T. SUZUKI, M. NAKAMURA, Zeon Chemicals L.P., S. ENGELMANN, E.A. 

JOSEPH, E.M. SIKORSKI, N.C.M. FULLER, IBM T.J. Watson Research Center, A. ITOU, 

Zeon Corporation 

11:20 am PS-WeM11 Dry Etching Characteristics Related to TiN Material Properties, 

A.P. LABONTE, F. WU, V. ARUNACHALAM, S. PATIL, GLOBALFOUNDRIES, C. NIU, ST 

Microelectronics, France, T.Q. CHEN, GLOBALFOUNDRIES, E. WORNYO, B.G. MORRIS, 

Y. YIN, IBM Microelectronics, Y. MIGNOT, ST Microelectronics, France 

11:40 am PS-WeM12 Dielectric Etch Selectivity Improvements using Pulsed Plasma, 

G. DELGADINO, E. HUDSON, L. ROMM, A. FONG, J. NAGARAH, Lam Research 


† ASSD Student Award Finalist 


137 

SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM9 A New Experimental Method to 

Determine the Torsional Spring Constants of Microcantilevers, G. 

HAEHNER, J.D. PARKIN, University of St Andrews, UK 

SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM10 A Torsional Device for Easy, 

Accurate and Traceable Force Calibration of AFM Cantilevers, J.F. 

PORTOLES, P.J. CUMPSON, Newcastle University, UK 

SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM11 Invited 

Nanoscale Surface Assembly by Single-Molecule Cut-and-Paste, H.E. 

GAUB, Ludwig-Maximilians Universitat, Germany 



Room: 22 - Session SS+OX-WeM 

Synthesis and Characterization of Oxides 

Moderator: J.M. Millunchick, University of Michigan 

8:00 am SS+OX-WeM1 Invited 

Structure and Dynamics of Oxide Surfaces and Interfaces, X. PAN, 

University of Michigan 


Room: 21 - Session SS-WeM 

Chemisorption on Metallic Surfaces 

Moderator: C.H. Sykes, Tufts University 

SS-WeM1 An Atomic-scale Study of the Adsorption, Assembly and 

Reactivity of Methanol with Model Cu, O/Cu and Pd/Cu Alloy Surfaces 

with STM, TPD and XPS, T. LAWTON, M. BOUCHER, A. BABER, G. KYRIAKOU, 

C.H. SYKES, Tufts University 

8:20 am Invited talk continued. SS-WeM2 Imaging the Role of Ligand Groups in Surface Coordination 

Chemistry/Networks: Cyano- vs. Isocyano Groups, L. BARTELS, M. LUO, S. 

BOBEK, K.D. COHEN, C. WANG, R. HOOLEY, University of California Riverside 

8:40 am SS+OX-WeM3 Capturing Ion-Solid Interactions with MOS Structures, R. 

SHYAM, E.S. SRINADHU, S. CHAMBERS, J.E. HARRISS, W.R. HARRELL, C.E. SOSOLIK, 

Clemson University 

9:00 am SS+OX-WeM4 Synthesis and Characterization of Yttrium Aluminum Garnet 

and Lanthanum Zirconate Particles, R.R. HARL*, S.L. GOLLUB, G. WALKER, B.R. 

ROGERS, Vanderbilt University 

9:20 am SS+OX-WeM5 X-ray Linear Dichroism of Epitaxial (Fe,N) Co-Doped Rutile 

TiO2 Thin Films, T.C. KASPAR, Pacific Northwest National Lab, A. NEY, Univ. of 

Duisburg-Essen, Germany, A.N. MANGHAM, Pacific Northwest National Lab, S.M. HEALD, 

Advanced Photon Source, Argonne National Lab, Y. JOLY, Institut Néel, CNRS et Univ. 

Joseph Fourier, France, V. NEY, Univ. of Duisburg-Essen, Germany, F. WILHELM, A. 

ROGALEV, F. YAKOU, European Synchrotron Radiation Facility, S.A. CHAMBERS, Pacific 

Northwest National Lab 

9:40 am SS+OX-WeM6 Unified Picture of the Excess Electron Distribution at the 

TiO2(110) Surface, P. KRUEGER, Institut Carnot de Bourgogne, France, J. JUPILLE, 

Institut des Nanosciences de Paris, France, S. BOURGEOIS, B. DOMENICHINI, Institut 

Carnot de Bourgogne, France, A. VERDINI, L. FLOREANO, A. MORGANTE, Laboratorio 

TASC, Italy 

SS-WeM3 Chemisorption, Ordering, and Structural Transitions in the 

Terephthalic Acid Monolayer and Bilayer on Cu(100), S.L. TAIT, Indiana 

University - Bloomington 

SS-WeM4 Attachment and Nanoscale Patterning of Alkyne Groups on 

Gold via Non-thermal Pathways, Q. LI, Oak Ridge National Laboratory, C.B. HAN, 

North Carolina State University, M. FUENTES-CABRERA, H. TERRONES, B.G. SUMPTER, 

W.C. LU, Oak Ridge National Laboratory, J. BERNHOLC, North Carolina State University, Z. 

GAI, A.P. BADDORF, P. MAKSYMOVYCH, M.H. PAN, Oak Ridge National Laboratory 

SS-WeM5 Molecular Structure of a Mixed NH3-O2 Overlayer on Pt(111), Z. 

LIANG, University of Illinois at Chicago, H. KIM, Y. KIM, RIKEN, Japan, M. TRENARY, 

University of Illinois at Chicago 

SS-WeM6 Enthalpies of Formation of Formate Intermediates Adsorbed on 

Pt(111) by Microcalorimetry, T.L. SILBAUGH, E.M. KARP, C.T. CAMPBELL, 




10:40 am SS+OX-WeM9 XPS Satellite Structure and Covalent Bonding, P.S. BAGUS, 

University of North Texas, E.S. ILTON, Pacific Northwest National Laboratory, C.J. NELIN, 

Consultant 

11:00 am SS+OX-WeM10 Surface of BaTiO3 (001): STM and STS Study, E. MORALES, 

J. MARTIREZ, A.M. RAPPE, D.A. BONNELL, University of Pennsylvania 

11:20 am SS+OX-WeM11 Synthesis and Characterization of White Light Emitting 

CaxSr1-xAl2O4:Tb 3+ ,Eu 3+ Phosphor, S.K. SHAAT, H.C. SWART, O.M. 

NTWAEABORWA, University of the Free State, South Africa 

11:40 am SS+OX-WeM12 A Novel 2-D Cu-Tungstate (CuWOx) Phase on Cu(110), 

F.P. NETZER, M. DENK, D. KUHNESS, M. WAGNER, S. SURNEV, University of Graz, 

Austria, F.R. NEGREIROS, L. SEMENTA, G. BARCARO, A. FORTUNELLI, CNR-IPCF Pisa, 

Italy 



138 

SS-WeM9 Adsorption Energy of Oxygen on Pt(111): Errors in Calorimetry 

Values and Consequences for the Enthalpy of Related Hydroxyl 

Species, C.T. CAMPBELL, E.M. KARP, University of Washington 

SS-WeM10 Mechanism of Halogenated Solvent Pre-Treatment of 

Polymeric Substrates to Significantly Improve Noble Metal Thin Film 

Adhesion, B.H. AUGUSTINE, W.C. HUGHES, A.K. MO, James Madison University, H.M. 

MEYER, Oak Ridge National Laboratory, T.C. DEVORE, James Madison University 

SS-WeM11 HREELS Investigation of Hydrocarbon Dehydrogenation on 

Oxide-Supported Platinum Nanoparticles, M.H.C. VAN SPYK, K.A. PERRINE, 

J.C. HEMMINGER, University of California Irvine 

SS-WeM12 Scanning Tunneling Microscopy Investigation of the 

Conversion of Propylene and Butylene to Carbon Clusters on Pt(111), 

G.F. SUN, S.S. KHAN, A.B. DE LA REE, J.C. HEMMINGER, University of California Irvine


Thin Film 

Room: 11 - Session TF+SE+NS-WeM 

Glancing Angle Deposition (GLAD) 

Moderator: T. Karabacak, University of Arkansas at Little Rock 

8:00 am TF+SE+NS-WeM1 Invited 

Tunable-Refractive-Index Materials – A New Class of Optical Thin-Film 

Materials with Applications in Solid-State Lighting and Solar 

Photovoltaics, E.F. SCHUBERT, Rensselaer Polytechnic Institute 

Thin Film 

Room: 10 - Session TF-WeM 

Thin Films for Encapsulation, Packaging, and Biomedical 

Devices 

Moderator: L.W. Rieth, University of Utah 

TF-WeM1 Optimizing a Spatial Atomic Layer Deposition Cell for High 

Throughput, Low Temperature, Roll-to-Roll Applications, M.J. DALBERTH, 

L. LECORDIER, M.J. SERSHEN, M. RUFFO, R. COUTU, G. SUNDARAM, J.S. BECKER, 

Cambridge Nanotech, Inc. 

8:20 am Invited talk continued. TF-WeM2 Encapsulation of Implantable Devices by Atomic Layer 

Deposited Al2O3 and Parylene C Bi-layer, X. XIE, L.W. RIETH, F. SOLZBACHER, 

University of Utah 

8:40 am TF+SE+NS-WeM3 Nanostructured Homogenous CdSe/TiO2 Composite 

Visible Light Photoanodes Fabricated by Oblique Angle Codeposition, 

G.K. LARSEN, University of Georgia, B.C. FITZMORRIS, University of California Santa Cruz, 

C. LONGO, University of Campinas, Brazil, J.Z. ZHANG, University of California Santa Cruz, 

Y.-P. ZHAO, University of Georgia 

9:00 am TF+SE+NS-WeM4 Control the Biaxial Texture of Vertically Aligned 

Nanostructures using Oblique Angle Sputtering Deposition with 

Substrate Flipping Rotation, G.-C. WANG, L. CHEN, T.-M. LU, Rensselaer 

Polytechnic Institute 

9:20 am TF+SE+NS-WeM5 Flux Engineering to Control In-Plane Crystal and 

Morphological Orientation, J.M. LAFORGE, G. INGRAM, M.T. TASCHUK, M.J. 

BRETT, University of Alberta, Canada 

9:40 am TF+SE+NS-WeM6 Bi-axial Texture Development in AlN Layers during Offaxis 

Sputter Deposition, R. DENG, D. GALL, Rensselaer Polytechnic Institute 

TF-WeM3 Invited 

Ultra-barrier Technology for Moisture-Sensitive Electronics, P.F. CARCIA, 

DuPont Central Research and Development 


TF-WeM5 Multilayer Barrier Coatings for Organic Photovoltaics, A.M. 

COCLITE, F. DE LUCA, K.K. GLEASON, Massachusetts Institute of Technology 

TF-WeM6 Preparation of Hydrophobic Coatings on Si/SiO2 by 

Incorporation of Nano- and Microdiamond in a Layer-By-Layer 

Deposition, A. DIWAN, J. WILCOCK, M.R. LINFORD, Brigham Young University 



10:40 am TF+SE+NS-WeM9 Engineered Indium Tin Oxide Nanowhiskers via Vapour 

Liquid Solid Glancing Angle Deposition, A.L. BEAUDRY, R.T. TUCKER, J.M. 

LAFORGE, M.T. TASCHUK, University of Alberta, Canada, M.J. BRETT, University of 

Alberta, Canada and The National Institute for Nanotechnology 

11:00 am TF+SE+NS-WeM10 CoPt Nanopillars for Advanced Media by Glancing 

Angle Deposition, H. SU, A. NATARAJARATHINAM, S. GUPTA, The University of 

Alabama 

11:20 am TF+SE+NS-WeM11 Through-post Electrical Characterization of GLAD Thin 

Films, A. LALANY, R.T. TUCKER, M.T. TASCHUK, University of Alberta, Canada, M.D. 

FLEISCHAUER, University of Alberta and The National Institute for Nanotechnology, 

Canada, M.J. BRETT, University of Alberta, Canada 

11:40 am TF+SE+NS-WeM12 Direct Label-Free Detection of microRNA Using a Multiwell 

SERS Chip Fabricated By Oblique Angle Deposition, J.L. ABELL, 

University of Georgia, J.M. GARREN, Georgia Health Science University, J.D. DRISKELL, 

Illinois State University, R.A. TRIPP, Y.-P. ZHAO, University of Georgia 

139


Room: 19 - Session TR+SE-WeM 

Tribology and Wear of Low-Friction Coatings and Materials 

Moderator: D.L. Burris, University of Delaware 

8:00 am TR+SE-WeM1 Invited 

Seeing Things as They Really are: In Situ Studies of Materials in 

Application Environments and the Development of Temperature- 

Adaptive Nanocomposites, C. MURATORE, Air Force Research Laboratory, J.J. HU, 

J.E. BULTMAN, UDRI/Air Force Research Laboratory, A.A. VOEVODIN, Air Force Research 


Room: 14 - Session VT+AS+SS-WeM 

Surface Analysis and Vacuum Manufacturing for 

Accelerators 

Moderator: M.L. Stutzman, Thomas Jefferson National Accelerator 

Laboratory 

8:20 am Invited talk continued. VT+AS+SS-WeM2 A High Power Electron Beam Stop for Cornell ERL 

Prototype Injector, X. LIU, Y. LI, K.W. SMOLENSKI, I. BAZAROV, B.M. DUNHAM, 

Cornell University 

8:40 am TR+SE-WeM3 Tribological Surface Chemistry of Model Lubricant Additives 

Measured in Ultrahigh Vacuum, W.T. TYSOE, University of Wisconsin Milwaukee 

9:00 am TR+SE-WeM4 Nanomechanical and Nanotribological Properties of ZnO 

Thin Films, E. BROITMAN, L. MARTÍNEZ DE OLCOZ SAINZ, Linköping University, 

Sweden, C. BOJORGE, Cinso, Citedef-Conicet, Argentina, J.B. MILLER, Carnegie Mellon 

University, H. CANEPA, Cinso, Citedef-Conicet, Argentina, L. HULTMAN, Linköping 

University, Sweden 

9:20 am TR+SE-WeM5 Tribological and Compositional Properties of Electroless 

Nickel-Boron Coatings Annealed at Various Temperatures, K. GILLEY, 

University of Florida, Y. RIDDLE, UCT Coatings Inc., S.S. PERRY, University of Florida 

9:40 am TR+SE-WeM6 Friction and Wear Behavior of Thin Plasma Electrolytic 

Oxidation Coatings on Aluminum Alloy Al319 Substrate, H. EILIAT, X. NIE, 

University of Windsor, Canada 

Facility 

VT+AS+SS-WeM1 Manufacturing and Welding Processes for TPS Large 

Aluminum Bending-Chambers and 14 m Vacuum Cells, C.L. CHEN, C.C. 

CHANG, C.K. CHAN, Y.C. YANG, T.Y. LEE, G.Y. HSIUNG, J.R. CHEN, NSRRC, Taiwan, 

Republic of China 

VT+AS+SS-WeM3 Ion Pump Starting Behaviour at High Pressures - 

Influence of Pump Design Diode / Triode and Power Supply, M. THIERLEY, 

C. PAOLINI, Agilent Technologies, Italy 

VT+AS+SS-WeM4 Invited 

Superconducting Niobium for Accelerator Cavities: Status and 

Prospects, M.J. KELLEY, Jefferson Lab and College of William & Mary 


VT+AS+SS-WeM6 Niobium Nitride Thin Films and Multilayers for 

Superconducting Radio Frequency Cavities, W.M. ROACH*, D.B. BERINGER, 

Z. LI, The College of William and Mary, J.R. SKUZA, National Institute of Aerospace, C. 

CLAVERO, R.A. LUKASZEW, The College of William and Mary 



10:40 am TR+SE-WeM9 First Contact: SPR and SERS Studies of the Initial Transfer 

Behavior of PTFE, K.L. HARRIS, B.A. KRICK, D.W. HAHN, W.G. SAWYER, University 

of Florida 

11:00 am TR+SE-WeM10 Tribological Investigations of Octadecylphosphonic Acid 

(ODP) and Octadecyltrichlorosilane (OTS) Self-Assembled Monolayers: 

A Comparative Study of MEMS-type Interfaces, N. ANSARI, Auburn University, 

S. BARKLEY, C. BOUXSEIN, M. DERAM, N. EIGENFELD, St. Olaf College, O. MATTHEWS, 

Luther College, A. PODA, W.R. ASHURST, Auburn University, B.P. BOROVSKY, St. Olaf 

College, E. LINN-MOLIN, E.E. FLATER, Luther College 

11:20 am TR+SE-WeM11 Diffusion of Gold Islands on Graphene, B. DAWSON, M. 

LODGE, M. ISHIGAMI, University of Central Florida 

11:40 am TR+SE-WeM12 Synthesis and Tribology of MoS3 Nanoparticles, J.R. LINCE, 

The Aerospace Corporation, A.M. PLUNTZE, Colorado State University, S.A. JACKSON, The 

Aerospace Corporation 

* ASSD Student Award Finalist 


140 

VT+AS+SS-WeM9 Characterization of Anisotropic Surface Morphology in 

Epitaxial Superconducting Thin Films by Wavelet Analysis, D.B. 

BERINGER, J.B. HACKETT, W.M. ROACH, R.A. LUKASZEW, The College of William and 

Mary 

VT+AS+SS-WeM10 NbN-AlN-Nb Multilayer Thin Films for Superconducting 

Radio Frequency Cavities, Z. LI, W.M. ROACH, D.B. BERINGER, C. CLAVERO, R.A. 

LUKASZEW, College of William and Mary 

VT+AS+SS-WeM11 Effect of Condensed Argon on Hydrogen Pumping in 

Commercial Cryogenic Pump, S. BHATT, K.A. JADEJA, A.K. PRAJAPATI, Institute 

for Plasma Research, India, T. PURABIA, Institute for Plasma Research, Inda, P.M. 

CHAVDA, Institute for Plasma Research, India

NOTES 

141


Room: West Hall - Session EW-WeL 

Wednesday Lunch, October 31, 2012 



12:00 pm EW-WeL1 Nanoparticle Coating Technology for Vacuum Deposition, A.H. 

KEAN, S. SARANU, M. GREEN, L. ALLERS, Mantis Deposition Ltd., UK 

12:20 pm EW-WeL2 Using the Ipad in PVD Applications, C. MALOCSAY, Semicore 

12:40 pm EW-WeL3 Physics-based Simulation for Semiconductor Processing 

Optimization, K. JAIN, N. SOLANKI, ESI Group 

1:00 pm EW-WeL4 Passive Thermal Actuator, I. MILLER, MEWASA North America, Inc. 

1:20 pm EW-WeL5 Bipolar Technoloogy for AZO Sputtering, P. OZIMEK, W. GŁAZEK, K. 

RUDA, A. KLIMCZAK, A. GIERAŁTOWSKI, HUETTINGER Electronic Sp. z o.o., Poland 

1:40 pm EW-WeL6 Novel Dual Mode Air Photoemission and Kelvin Probe System 

for Work Function Analysis of Nanometer Films, I.D. BAIKIE, KP Technology, 

UK 

142

Wednesday Afternoon, October 31, 2012 


Room: 20 - Session AS+NS+SS+TF-WeA 

3D Imaging & Nanochemical Analysis - Part 2 (2:00-3:20 pm)/ 

Advanced Data Analysis and Instrument Control (4:00-6:00 pm) 

Moderators: V.S. Smentkowski, General Electric Global Research 

Center, M.R. Linford, Brigham Young University, S.J. Pachuta, 3M 

Company 

2:00 pm AS+NS+SS+TF-WeA1 Invited 

From Atomic Scale to Materials Behavior: Using Atom-Probe 

Tomography to Understand the Behavior of Alloys and Ceramics, E.A. 

MARQUIS, University of Michigan 


2:40 pm AS+NS+SS+TF-WeA3 Three Dimensional Atomic Scale Characterization of 

Binary and Complex Oxides using Atom Probe Tomography, A. DEVARAJ, 

R. COLBY, D.E. PEREA, S. THEVUTHASAN, EMSL, Pacific Northwest National Laboratory 

3:00 pm AS+NS+SS+TF-WeA4 Atom Probe Tomography of Complex Heterogeneous 

Low Dimensional Materials, S. THEVUTHASAN, A. DEVARAJ, R. COLBY, D.E. 

PEREA, V. SUBRAMANIAN, V. SHUTTHANANDAN, Pacific Northwest National Laboratory 



4:00 pm AS+NS+SS+TF-WeA7 Upgrading a 25 Year Old ims-4f Magnetic Sector 

SIMS Instrument: Teaching an Old Dog New Tricks and Keeping 

Research in its Future, A.J. FAHEY, B.E. NAES, G. HAGER, Pacific Northwest 


4:20 pm AS+NS+SS+TF-WeA8 Automated Processing of X-ray Photo-Electron 

Spectra, K. MACAK, E. MACAK, S.J. COULTAS, S.J. HUTTON, A.J. ROBERTS, R. 

RASO, S.J. PAGE, C.J. BLOMFIELD, Kratos Analytical Ltd, UK 

4:40 pm AS+NS+SS+TF-WeA9 Correlating Structure and Chemistry – A 

Multitechnique Study using Light Microscopy (LM), SEM and XPS, M.L. 

PACHOLSKI, P.Y. EASTMAN, The Dow Chemical Company 

5:00 pm AS+NS+SS+TF-WeA10 Meet Challenges in Processing Large Datasets 

Generated from High Resolution Mass Spectrometry, S. RYU, M. THOMAS, 

G. LIN, K. KLEESE-VAN DAM, J. CARSON, E. STEPHAN, J. LIU, J. LASKIN, D.S. LI, Pacific 


5:20 pm AS+NS+SS+TF-WeA11 Invited 

Multivariate Analysis of Infrared and Raman Microspectroscopic Data for 

Medical Diagnostic Applications, M. DIEM, Northeastern University 

Biointerphases Focus Topic: Bioimaging 

Room: 23 - Session BN+AS-WeA 

Bioimaging 

Moderator: M. Grunze, University of Heidelberg, Germany 

BN+AS-WeA1 Invited 

Label-free Non-Invasive Imaging of Live Cells by Raman Micro- 

Spectroscopy, I. NOTINGHER, University of Nottingham, UK 

BN+AS-WeA3 Perfluoropentane Gas and Liquid Filled Hollow Silica 

Micro/Nano Spheres for Ultrasound Guided Surgery and HIFU Therapy, 

A. LIBERMAN, H.P. MARTINEZ, Z. WU, C.V. BARBACK, S.L. BLAIR, Y. KONO, R.F. 

MATTREY, W.C. TROGLER, A.C. KUMMEL, University of California San Diego 

BN+AS-WeA4 Differentiation of Breast Cancer Cell Lines with ToF-SIMS, 

L.J. GAMBLE, M. ROBINSON, University of Washington, F. MORRISH, D. HOCKENBERY, 

Fred Hutchinson Cancer Research Center 

BN+AS-WeA7 Invited 

Biological Applications of Lipid Imaging with Cluster-TOF-SIMS and 

MALDI-TOF, A. BRUNELLE, CNRS, Institut de Chimie des Substances Naturelles 

(ICSN), France 


BN+AS-WeA9 ToF-SIMS Image Analysis of Mouse Diaphragm Muscle 

Cross-Sections, D.J. GRAHAM, N.P. WHITEHEAD, S.C. FROEHNER, D.G. CASTNER, 


BN+AS-WeA10 ToF-SIMS Characterisation of the Distribution and 

Permeation of Topically Applied Pharmaceuticals, D.J. SCURR, University of 

Nottingham, UK, A. JUDD, Keele University, UK, K. WAN, University of Central Lancashire, 

UK, J. HEYLINGS, Dermal Technology Laboratory Ltd., UK, G. MOSS, Keele University, UK 

BN+AS-WeA11 Coherent X-ray Microscopy of Vitrified Biological Samples, 

A. ROSENHAHN, Ruhr-University Bochum, Germany, T. GORNIAK, T. SENKBEIL, A. 

BUCK, M. BECKERS, M.H. GRUNZE, Karlsruhe Institute of Technology, Germany 

5:40 pm Invited talk continued. BN+AS-WeA12 Characterization of Nanoparticles Implanted into Tissues 

for Enhancement of Ion-Mobility Mass Spectrometry Surface Imaging of 

Sagittal Brain Sections, E.K. LEWIS, Ionwerks, Inc., J.F. MOORE, MassThink, T.F. 

EGAN, Ionwerks, Inc., B. CHEN, B. BRINSON, Rice University, V.M. WOMACK, D. 

BARBACCI, Ionwerks, Inc., R. HAUGE, Rice University, A.S. WOODS, National Institute on 

Drug Abuse / IRP, J.A. SCHULTZ, Ionwerks, Inc. 

143



Room: 9 - Session EM+OX-WeA 

Oxides and Dielectrics for Novel Devices and Ultra-dense 

Memory 

Moderators: J.F. Conley, Oregon State University, 

J. Kim, The University of Texas at Dallas 

2:00 pm EM+OX-WeA1 Invited 

Dielectric Requirements for a Novel Tunnel-FET Based on Room- 

Temperature Superfluidity in Graphene Double Layers, L.F. REGISTER, X. 

MAU, D. REDDY, D. BASU, W. JUNG, I. SODEMAN, D. PESIN, A. HASSIBI, A.H. 

MACDONALD, S.K. BANERJEE, University of Texas at Austin 



Interfaces and Surfaces in Tunnel Field-effect Transistors, G. XING, 

University of Notre Dame 


Room: 15 - Session EN+TF-WeA 

Thin Films for Energy Applications 

Moderator: S. Maldonado, University of Michigan 

EN+TF-WeA1 Invited 

Batteries and Battery Materials by Vapor Deposition, N. DUDNEY, Oak Ridge 


EN+TF-WeA3 Chemical Vapor Deposition of Polythiophenes: Practical 

Considerations and Applications in Energy Storage Devices, S. NEJATI, Z. 

CARTER, K.S. LAU, Drexel University 

3:00 pm Invited talk continued. EN+TF-WeA4 Silicon Carbide Nanostructures for Micro-supercapacitor 

Applications, J.P. ALPER, M. VINCENT, C. CARRARO, R. MABOUDIAN, University of 

California Berkeley 



4:00 pm EM+OX-WeA7 Resistive Switching Characteristics of Al2O3/TiO2 Bilayer 

ReRAM dependent on Al2O3 Thickness, H.Y. JEON, J.S. LEE, J.G. PARK, W.C. 

JANG, H.T. JEON, Hanyang University, Korea 

4:20 pm EM+OX-WeA8 High- k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer 

Deposition, N.Y. GARCES, D.J. MEYER, B.P. DOWNEY, V.D. WHEELER, D.W. 

ZAPOTOK, C.R. EDDY, JR., U.S. Naval Research Laboratory 


Micro-Antenna Coupled Nano-MIM Diodes: Modeling, Design, 

Processing and Application, N. GOLDSMAN, Univ. of Maryland, CoolCAD 

Electronics LLC, F. YESILKOYA, Univ. of Maryland, S. POTBHARE, CoolCAD Electronics, 

LLC, M. PECKERAR, Univ. of Maryland, A. AKTURK, CoolCAD Electronics, LLC, K. CHOI, 

EN+TF-WeA7 Efficient Radiative and Non-Radiative Energy Transfer from 

Quantum Dots to Silicon Nanomembrane. Evidence of Waveguiding 

Phenomena, O. SEITZ, H.M. NGUYEN, W. PENG, YU.N. GARTSTEIN, Y.J. CHABAL, 

A.V. MALKO, University of Texas at Dallas 

EN+TF-WeA8 Supercapacitors for On-Chip Energy Storage, P. ALGARIN- 

AMARIS, J. WANG, S. THOMAS, University of South Florida 

EN+TF-WeA9 Synthesis of a Thin-Film Yttria-Stabilized-Zirconia (Y2O3- 

ZrO2) Thin Films by Radical Enhanced Atomic Layer Deposition for μ- 

Solid Oxide Fuel Cell Applications, J. CHO, D. MEMBRENO, B. DUNN, J.P. 

CHANG, University of California, Los Angeles 

Univ. of Maryland, W. CHURAMAN, U.S. Army Research Lab, N.K. DHAR, DARPA/MTO 

5:00 pm Invited talk continued. EN+TF-WeA10 ALD-enabled Tunneling and Transparent Conductive Oxide 

Layers for Novel Silicon Nanowire Solar Cells, M. TOIVOLA, Picosun, Finland, 

C.L. DEZELAH, Picosun USA, LLC 

5:20 pm EM+OX-WeA11 High-Electron-Mobility SiGe on Sapphire Substrate for 

Next Generation Ultrafast Chipsets, H.J. KIM, Y. PARK, National Institute of 

Aerospace (NIA), H.-B. BAE, Korea Advanced Institute of Science and Technology, S.H. 

CHOI, NASA Langley Research Center (NASA LaRC) 

5:40 pm EM+OX-WeA12 Fabrication and Characterization of Metal-Insulator- 

Insulator-Metal (MIIM) Tunnel Diodes, A.N. NASIR, J.F. CONLEY, Oregon State 

University 

144 

EN+TF-WeA11 Effect of Top Electrodes on the Photovoltaic Properties of 

Ferroelectric PLZT Thin Film Capacitors, V. NAMPOORI, S. KOTRU, The 

University of Alabama 

EN+TF-WeA12 Synthesis of Nano-structured Zn3P2 as a Solar Cell 

Absorber, P.S. VASEKAR, S.P. ADUSUMILLI, D. VANHART, T. DHAKAL, Binghamton 

University



Room: West Hall - Session EW-WeA 




Room: 13 - Session GR+AS+EM+NS+SS-WeA 

Dopants and Defects in Graphene; Graphene Interfaces with 

Other Materials 

Moderator: D. Gunlycke, Naval Research Laboratory 

2:00 pm GR+AS+EM+NS+SS-WeA1 Increasing Interface Bonding and Tuning Doping 

Behavior at Metal-Graphene-Metal Sandwich Contact, C. GONG, R.M. 

WALLACE, K.J. CHO, Y.J. CHABAL, The University of Texas at Dallas 

2:20 pm GR+AS+EM+NS+SS-WeA2 Defects in Two-Dimensional Materials and their 

Heterostructures, L. ADAMSKA, I.I. OLEYNIK, University of South Florida 

2:40 pm GR+AS+EM+NS+SS-WeA3 Invited 

The Role of Defects and Doping in Graphene-like Materials and Beyond, 

M. TERRONES, Pennsylvania State University, Shinshu University, Japan 


3:20 pm EW-WeA5 Heidelberg Instruments microPG501, A Direct Write 

Lithography Tool, N. WIJNAENDTS VAN RESANDT, Heidelberg Instruments 

3:40 pm EW-WeA6 Dry Etching Enabling Surface Texturing for Thin Substrate 

Solar Cells, R. MOHONDRO, Plasma-Therm LLC 

BREAK 

BREAK 

4:00 pm GR+AS+EM+NS+SS-WeA7 Metal Oxide Growth and Characterization on 

CVD Graphene, A. MATSUBAYASHI, College of Nanoscale Science and Engineering, 

University at Albany 

4:20 pm GR+AS+EM+NS+SS-WeA8 Bi-layer Graphene Growth on Ni(111): The Role 

of Monolayer Graphene Rotation, A. DAHAL, A. RAFIK, University of South Florida, 

P.W. SUTTER, Brookhaven National Laboratory, M. BATZILL, University of South Florida 

4:40 pm GR+AS+EM+NS+SS-WeA9 Energetic and Kinetic Factors of Graphene 

Nucleation on Cu, N. SAFRON, M.S. ARNOLD, University of Wisconsin-Madison 

5:00 pm GR+AS+EM+NS+SS-WeA10 Magnetic Spin Reorientation Transition in 

Graphene Covered Cobalt on Iridium(111), A.T. N'DIAYE, Lawrence Berkeley 

National Laboratory, J. CORAUX, N. ROUGEMAILLE, C. VO-VAN, O. FRUCHART, Institut 

NÉEL, CNRS & Université Joseph Fourier, France, A.K. SCHMID, Lawrence Berkeley 


5:20 pm GR+AS+EM+NS+SS-WeA11 Nucleation and Growth of Rh and Au Clusters 

on Graphene Moiré/Ru(0001), B. HABENICHT, Oak Ridge National Laboratory, D. 

TENG, Georgia Institute of Technology, L. SEMIDEY-FLECHA, Oak Ridge National 

Laboratory, D. SHOLL, Georgia Institute of Technology, Y. XU, Oak Ridge National 

Laboratory 

5:40 pm GR+AS+EM+NS+SS-WeA12 Graphitic and Pyridinic N Species on N-doped 

HOPG Studied by STM, STS, PES and DFT, M. SAKURAI, T. SHIKANO, D. 

USHIGOME, T. SUZUKI, University of Tsukuba, Japan, Y. HARADA, M. OSHIMA, University 

of Tokyo, Japan, S. CASOLO, University of Milan, Italy, M.I. TRIONI, ISTM, Italy, G.F. 

TANTARDINI, University of Milan, Italy, T. KONDO, J. NAKAMURA, University of Tsukuba, 

Japan 

145



Room: 19 - Session HI+AS+NS-WeA 

Basics of Helium Ion Microscopy 

Moderator: A. Gölzhäuser, University of Bielefeld, Germany 

2:00 pm HI+AS+NS-WeA1 Invited 

Basics of Imaging with Ions, D. JOY, University of Tennessee 

Late Breaking Session 

Room: 14 - Session LB+EM+GR+MN+TR-WeA 

Select Topics in Surface and Interface Science 

Moderators: C.R. Eddy, Jr., U.S. Naval Research Laboratory, 

J.M. Fitz-Gerald, University of Virginia 

LB+EM+GR+MN+TR-WeA1 Degradation Kinetics of Hard Gold Tribofilms, N. 

ARGIBAY, M.T. DUGGER, M.T. BRUMBACH, S.V. PRASAD, Sandia National Laboratories 

2:20 pm Invited talk continued. LB+EM+GR+MN+TR-WeA2 Effect of Nitrogen Concentration on the Surface 

Properties of Plasma Nitrided Tool Steels, P. ABRAHA, J. MIYAMOTO, Meijo 


2:40 pm HI+AS+NS-WeA3 Invited 

Surface Analysis using Channeling Contrast in NUHV Helium Ion 

Microscopy, B. POELSEMA, University of Twente, Netherlands 

LB+EM+GR+MN+TR-WeA3 High Strength Carbon Fiber Composite Wafers 

for Microfabrication, L. PEI, K. ZUFELT, R. VANFLEET, R.C. DAVIS, J. LUND, K. 

JONES, B.D. JENSEN, Brigham Young University, J. ABBOTT, M. HARKER, M. ZAPPE, S. 

LIDDIARD, Moxtek 

3:00 pm Invited talk continued. LB+EM+GR+MN+TR-WeA4 Thermal Convection-based Inclinometer using 

Carbon Nanotube, D.W. JUNG, The University of Texas at Dallas 



4:00 pm HI+AS+NS-WeA7 Evaluation of W(111) Gas Field Ion Sources Based on 

Single Atom Tips, R. URBAN, University of Alberta and The National Institute for 

Nanotechnology, Canada, J.L. PITTERS, National Institute for Nanotechnology, NRC 

Canada, R.A. WOLKOW, University of Alberta and The National Institute for Nanotechnology, 

Canada 

4:20 pm HI+AS+NS-WeA8 Single-atom Tip as an Emitter of Gas Field Ion Sources, 

I.-S. HWANG, H.-S. KUO, Academia Sinica, Taiwan, Republic of China, T.-Y. FU, National 

Taiwan Normal University, Taiwan, Republic of China, J.-L. HOU, C.-Y. LIN, Y.-H. LU, W.-T. 

CHANG, T.T. TSONG, Academia Sinica, Taiwan, Republic of China 

4:40 pm HI+AS+NS-WeA9 Helium Ions for Imaging and Nanofabrication on the nm 

Scale, E. VAN VELDHOVEN, H.H.P.TH. BEKMAN, F.T. MOLKENBOER, N.B. KOSTER, 

D.J. MAAS, TNO Technical Sciences, The Netherlands 

5:00 pm HI+AS+NS-WeA10 Towards Secondary Ion Mass Spectrometry on the 

Helium Ion Microscope, T. WIRTZ, N. VANHOVE, L. PILLATSCH, D. DOWSETT, 

Centre de Recherche Public – Gabriel Lippmann, Luxembourg, S. SIJBRANDIJ, J. NOTTE, 

Carl Zeiss 

LB+EM+GR+MN+TR-WeA7 Selective Graphitization using Multi-Ion Beam 

Lithography, J. FRIDMANN, Raith USA Inc., S. TONGAY, University of California, 

Berkeley, M. LEMAITRE, A.F. HEBARD, B. GILA, University of Florida, A. NADZEYKA, Raith 

GmbH, Germany, F. REN, X. WANG, University of Florida, D.K. VENKATACHALAM, R.G. 

ELLIMAN, Australian National University, Australia, B.R. APPLETON, University of Florida 

LB+EM+GR+MN+TR-WeA8 Unrippling and Imaging of Extra-Large Free- 

Standing Graphene with Atomic Precision, W.W. PAI, R. BREITWEISER, Y.C. 

HU, Y.C. CHAO, National Taiwan University, Taiwan, Republic of China, Y.R. TZENG, 

Institute of Nuclear Energy Research of Taiwan, Republic of China, L.J. LI, Academia Sinica, 

Taiwan, Republic of China, K.C. LIN, Catholic Fu Jen University, Taiwan, Republic of China 

LB+EM+GR+MN+TR-WeA9 Ultrafast Charge Transfer at Monolayer 

Graphene Surfaces with Varied Substrate Coupling, S. LIZZIT, ELETTRA 

Sincrotrone Trieste, Italy, R. LARCIPRETE, CNR , Institute of Complex Systems, Italy, P. 

LACOVIG, ELETTRA Sincrotrone Trieste, Italy, K. KOSTOV, Bulgarian Academy of 

Sciences, Bulgaria, D. MENZEL, Technische Universität München and Fritz Haber Institute, 

Germany 

LB+EM+GR+MN+TR-WeA10 Fano Interference Effects in Hydrogen 

Intercalated Graphene, A. BOOSALIS, T. HOFMANN, University of Nebraska-Lincoln, 

R. ELMQUIST, M. REAL, National Institute of Standards and Technology (NIST), M. 

SCHUBERT, University of Nebraska-Lincoln 

5:20 pm LB+EM+GR+MN+TR-WeA11 In Situ Dry-Cleaning of Ge(100) Surface using 

H2O2, K. KIANTAJ, T. KAUFMAN OSBORN, T.J. KENT, A.C. KUMMEL, University of 

California San Diego 

5:40 pm LB+EM+GR+MN+TR-WeA12 Hf-based High-k Dielectrics for Ge MOS Stacks, 

S. FADIDA, M. EIZENBERG, Technion Israel Institue of Technology, Israel, L. NYNS, D. LIN, 

S. VAN ELSHOCHT, M. CAYMAX, IMEC, Belgium 

146



Room: 6 - Session MI+OX-WeA 

Spintronics, Magnetoelectrics, Multiferroics 

Moderator: G.J. Mankey, University of Alabama 

2:00 pm MI+OX-WeA1 Imaging of Temperature-Driven Nucleation of Ferromagnetic 

Domains in FeRh Thin Films, C. BALDASSERONI, C. BORDEL, Univ. of California 

Berkeley, A.X. GRAY, SLAC National Accelerator Lab, A.M. KAISER, Peter-Grünberg- 

Institut, Germany, F. KRONAST, Helmholtz-Zentrum Berlin für Materialien und Energie, 

Germany, J. HERRERO-ALBILLOS, Centro Univ. de la Defensa, Spain, C.M. SCHNEIDER, 

Peter-Grünberg-Institut, Germany, C.S. FADLEY, Lawrence Berkeley National Lab, F. 

HELLMAN, Univ. of California Berkeley 

2:20 pm MI+OX-WeA2 Magnetic Properties of Cobalt and Permalloy Thin Films 

Grown on Self-Assembled Monolayers by Physical Vapor Deposition, 

G.J. SZULCZEWSKI, S. SCHAFER, B. KHODADADI, T. MEWES, J. KREIL, E. 

ELLINGSWORTH, K. ANDERSON, The University of Alabama 

2:40 pm MI+OX-WeA3 Invited 

Synthesis and Fundamental Properties of Fe16N2 Films - New 

Excitements of Fe16N2 Research and a 40-year Mystery, J.-P. WANG, 

University of Minnesota 




4:00 pm MI+OX-WeA7 Invited 

Spin Transfer Torque MRAM - Modeling, Experiments and Future 

Prospects, D. APALKOV, A. KHVALKOVSKIY, V. NIKITIN, S. WATTS, A. DRISKILL- 

SMITH, D. LOTTIS, R. CHEPULSKYY, V. VOZNYUK, X. TANG, K. MOON, E. CHEN, C.M. 

PARK, M. KROUNBI, Grandis, Inc. 


4:40 pm MI+OX-WeA9 Epitaxial Growth of Multiferroic Heterostructures of Magnetic 

and Ferroelectric Oxides using the Dual-laser Ablation Technique, D. 

MUKHERJEE, M. HORDAGODA, R.H. HYDE, N. BINGHAM, H. SRIKANTH, P. 

MUKHERJEE, S. WITANACHCHI, University of South Florida 

5:00 pm MI+OX-WeA10 The Highly Polarized Surface of Magnetoelectric 

Antiferromagnet, N. WU, X. HE, J. SANTANA, J. WANG, University of Nebraska-Lincoln, 

E. VESCOVO, Brookhaven National Laboratory, C. BINEK, P.A. DOWBEN, University of 

Nebraska-Lincoln 

5:20 pm MI+OX-WeA11 Sub-monolayer Spin Rotation of Photoelectrons from FePc 

on Fe(110), J.E. ROWE, D.B. DOUGHERTY, A.A. SANDIN, North Carolina State 

University, E. VESCOVO, Brookhaven National Laboratory 

5:40 pm MI+OX-WeA12 Magnetic Configurations of Ni80Fe20/Ir Superlattices, G.J. 

MANKEY, University of Alabama, J. HWANG, Lane College, N. PACHAURI, E.A. 

MANOHARAN, P.R. LECLAIR, University of Alabama, H. AMBAYE, V. LAUTER, Oak Ridge 


147 


Room: 12 - Session NS-WeA 

Nanophotonics and Plasmonics 

Moderator: D. Wei, University of Florida 

NS-WeA1 Plasmon Induced Current In Hybrid Nanostructures, D.A. 

BONNELL, D. CONKLIN, S. NANAYAKKARA, X. CHEN, The University of Pennsylvania, 

T.H. PARK, University of Michigan, M. THERIEN, Duke University 

NS-WeA2 Absorption from Plasmonic Antenna Arrays, K.E. O'BRIEN, P. 

WANG, P.H. HOLLOWAY, M.R. DAVIDSON, University of Florida 

NS-WeA3 Invited 

New Directions in Plasmonics: Pushing the Sensitivity, Space, and Time 

Limits, R.P. VAN DUYNE, Northwestern University 

NS-WeA7 Invited 

Near-Field Spatio-Temporal Control of Optical Fields for Spectroscopic 

Nano-imaging: Ultrafast Spectroscopy Reaching the Single Molecule 

Limit, M.B. RASCHKE, University of Colorado 

NS-WeA9 Tuning the Optical Properties of Arrays of Pure and Doped Au 

Nano Chains, N. NAYYAR, V. TURKOWSKI, T.S. RAHMAN, University of Central Florida 

NS-WeA10 Synthesis, Characterization and Plasmonic Properties of 

Horizontally and Vertically Aligned Ag Nanorods and Nanowires, S. 

VILAYURGANAPATHY, A. PANDEY, A. DEVARAJ, D.E. PEREA, S. THEVUTHASAN, 

EMSL, Pacific Northwest National Laboratory, A. KAYANI, Western Michigan University 

NS-WeA11 Localized Surface Plasmon Resonances in Silicon, L.-W. CHOU, 

N. SHIN, S. SIVARAM, M. FILLER, Georgia Institute of Technology


Room: 24 - Session PS1-WeA 

Plasma Diagnostics, Sensors and Control 2 

Moderator: R. Ramos, LTM, France 

2:00 pm PS1-WeA1 ECR Plasma Etching Characterization using a Retarding Field 

Energy Analyzer, B. DOLINAJ, Dublin City University, Ireland, V. MILOSAVLJEVIC, 

Dublin City University, D. GAHAN, Impedans Ltd., N. MACGEARAILT, Intel Corporation, M.B. 

HOPKINS, Impedans Ltd., S. DANIELS, Dublin City University 

2:20 pm PS1-WeA2 Time Resolved Ion Flux Measurement in Pulsed ICP Plasmas, 

G. CUNGE, M. DARNON, LTM-CNRS, France, N.ST. BRAITHWAITE, The Open University, 

UK, E. DESPIAU-PUJO, P. BODART, M. BRIHOUM, M. HAASS, O. JOUBERT, LTM-CNRS, 

France 

2:40 pm PS1-WeA3 In Situ Monitoring of Electron Density and Dielectric Layer on 

the Wall with Curling Probe, A. PANDEY, Y. LIANG, S. IKEZAWA, K. NAKAMURA, 

H. SUGAI, Chubu University, Japan 

3:00 pm PS1-WeA4 Spatial and Time Resolved Optical Emission Spectroscopy of 

an ECR Plasma Etcher, V. MILOSAVLJEVIC, N. MACGEARAILT, S. DANIELS, 

Dublin City University, Ireland 



4:00 pm PS1-WeA7 Invited 

Time Resolved Laser Induced Fluorescence for Probing the Excitation 

Kinetics of a Low Temperature Argon Discharge, J.M. PALOMARES 

LINARES, E.A.D. CARBONE, S. HÜBNER, W.A.A.D. GRAEF, J.J.A.M. VAN DER MULLEN, 

Eindhoven University of Technology, the Netherlands 


Room: 25 - Session PS2-WeA 

Plasma Surface Interactions during PECVD and Plasma 

Surface Modification 

Moderator: C.A. Wolden, Colorado School of Mines 

PS2-WeA1 Invited 

Surface Modifications Induced by Extreme Fluxes of Low-Energy Ions, G. 

DE TEMMERMAN, K. BYSTROV, FOM Institute DIFFER, Netherlands, M.J. BALDWIN, R.P. 

DOERNER, University of California San Diego, L. MAROT, University of Basel, Switzerland, 

H.Y. XU, Tsinghua University, China, M.C.M. VAN DE SANDEN, FOM Institute DIFFER, 

Netherlands 


PS2-WeA3 Investigation of Plasma-Surface Interactions Between 

Hydrogen Radical and Chemically Amplified Photoresist, A. MALINOWSKI, 

Institute of Electron Technology, Poland, M. SEKINE, M. HORI, K. ISHIKAWA, H. KONDO, T. 

TAKEUCHI, T. SUZUKI, Nagoya University, Japan, A. JAKUBOWSKI, L. LUKASIAK, 

Warsaw University of Technology, Poland, D. TOMASZEWSKI, Institute of Electron 

Technology, Poland 

PS2-WeA4 Kinetic Theory of the Sheath near Electron Emitting Surfaces, 

J.P. SHEEHAN, University of Wisconsin Madison, I.D. KAGANOVICH, Princeton Plasma 

Physics Laboratory, N. HERSHKOWITZ, University of Wisconsin Madison, Y. RAITSES, 

Princeton Plasma Physics Laboratory 

PS2-WeA7 Probing CF and CF2 Surface Reactivities in Inductively- 

Coupled Fluorocarbon Plasmas, M.F. CUDDY*, E.R. FISHER, Colorado State 

University 

4:20 pm Invited talk continued. PS2-WeA8 Effects of Ar Ion Bombardment on Protection of Organosilicate 

Glass from O2 Plasma Damage, H.UR. KAZI, S. GADDAM, J.A. KELBER, 

University of North Texas 

4:40 pm PS1-WeA9 Analysis of Run-to-Run Variability in the Bosch Process using 

rf Probe and Emission Spectroscopy Measurements, M. FRADET, L. 

STAFFORD, Université de Montréal, Canada, C. COÏA, Teledyne Dalsa, Canada 

5:00 pm PS1-WeA10 Spatially-resolved Optical Emissions Spectroscopy of 

Capacitively Coupled Discharges, G. FRANZ, I. KRSTEV, F. SCHAMBERGER, 

Hochschule München, Germany 

5:20 pm PS1-WeA11 Model-based Ion Energy Control in ICP Etcher, M. KLICK, 

Plasmetrex, Germany, H.P. MAUCHER, United Monolithic Semiconductors 

5:40 pm PS1-WeA12 High Energy IED Measurements with MEMs based Si Grid 

Technology Inside a 300mm Si Wafer, M. FUNK, B.G. LANE, L. CHEN, J. ZHAO, 

R. SUNDARARAJAN, Tokyo Electron America, Y. YAMAZAWA, Tokyo Electron Limited, 

Japan 



148 

PS2-WeA9 Ion-Surface Interaction during Microcrystalline Silicon Thin 

Film Growth, J. PALMANS, A.C. BRONNEBERG, X. KANG, M.C.M. VAN DE SANDEN, 

W.M.M. KESSELS, M. CREATORE, Eindhoven University of Technology, the Netherlands 

PS2-WeA10 Time Resolved Characterization of Pulsed ICP CH4 – H2 

Based Plasmas, S. JACQ, L. LE BRIZOUAL, C. CARDINAUD, A. GRANIER, University 

of Nantes - CNRS, France 

PS2-WeA11 Plasma-Surface Interactions, Erosion, and Impact on Plasma 

Distribution Functions, N. FOX-LYON, University of Maryland, College Park, D.B. 

GRAVES, University of California Berkeley, S.Y. MOON, V.M. DONNELLY, D.J. 

ECONOMOU, University of Houston, G.S. OEHRLEIN, University of Maryland, College Park 

PS2-WeA12 MD Simulations of Hydrogen Plasma Interaction with 

Graphene Surfaces, E. DESPIAU-PUJO, A. DAVYDOVA, G. CUNGE, CNRS/UJF- 

Grenoble1/CEA LTM, France, L. MAGAUD, CNRS/UJF Institut Neel, France, D.B. GRAVES, 

University of California Berkeley


Room: 16 - Session SP+AS+BI+ET+MI+TF-WeA 

Emerging Instrument Formats 

Moderator: A. Belu, Medtronic, Inc. 

2:00 pm SP+AS+BI+ET+MI+TF-WeA1 Invited 

Electrochemical Strain Microscopy: Nanoscale Imaging of Solid State 

Ionics, S. JESSE, Oak Ridge National Laboratory 


Room: 22 - Session SS+EM-WeA 

Semiconductor Surfaces 

Moderator: M.A. Hines, Cornell University 

SS+EM-WeA1 Local Characterization of Laterally Patterned GaN Polar 

Surfaces, J.D. FERGUSON, Virginia Commonwealth University, J.K. HITE, M.A. 

MASTRO, C.R. EDDY, JR., U.S. Naval Research Laboratory, A.A. BASKI, Virginia 

Commonwealth University 

2:20 pm Invited talk continued. SS+EM-WeA2 Systematic Prediction of Entropic Surface Reconstruction 

Stabilization on GaAs(001) from First Principles, J.C. THOMAS, A. VAN DER 

VEN, University of Michigan, N.A. MODINE, Sandia National Laboratories, J.M. 

MILLUNCHICK, University of Michigan 

2:40 pm SP+AS+BI+ET+MI+TF-WeA3 Probing Electrochemical Phenomena in 

Reactive Environments at High Temperature: In Situ Characterization of 

Interfaces in Fuel Cells, S.S. NONNENMANN, R. KUNGAS, J.M. VOHS, D.A. 

BONNELL, University of Pennsylvania 

3:00 pm SP+AS+BI+ET+MI+TF-WeA4 High-Resolution Scanning Local Capacitance 

Measurements, M. BRUKMAN, University of Pennsylvania, S. NANAYAKKARA, 

National Renewable Energy Laboratory, D.A. BONNELL, University of Pennsylvania 



4:00 pm SP+AS+BI+ET+MI+TF-WeA7 Experimental Calibration of the Higher Flexural 

Modes of Microcantilever Sensors, J.D. PARKIN, G. HÄHNER, University of St 

Andrews, UK 

4:20 pm SP+AS+BI+ET+MI+TF-WeA8 Atomic Imaging with Peak Force Tapping, B. 

PITTENGER, Y. HU, C. SU, S.C. MINNE, Bruker AFM 

4:40 pm SP+AS+BI+ET+MI+TF-WeA9 Invited 

Nanoscale Chemical Composition Mapping with AFM-based Infrared 

Spectroscopy, C.B. PRATER, M. LO, Q. HU, Anasys Instruments, C. MARCOTT, Light 

Light Solutions, B. CHASE, University of Delaware, R. SHETTY, K. KJOLLER, Anasys 

Instruments 

SS+EM-WeA3 Invited 

3D Atomic Scale Structure Analysis of Semiconductor Nanostructures by 

Atom Probe Tomography and Cross-Sectional STM, P.M. KOENRAAD, 

Eindhoven University of Technology, Netherlands 



5:20 pm SP+AS+BI+ET+MI+TF-WeA11 Quantifying Nanomechanical Properties with 

Simultaneous AM-FM and tanδ Imaging, T. MEHR, A. MOSHAR, R. PROKSCH, 

I. REVENKO, N. GEISSE, S. HOHLBAUCH, D. WALTERS, J. CLEVELAND, J. BEMIS, C. 

CALLAHAN, D. BECK, Asylum Research 

5:40 pm SP+AS+BI+ET+MI+TF-WeA12 Simultaneous Scanning Tunneling and Atomic 

Force Microscopy with Subatomic Spatial Resolution, FJ. GIESSIBL, 

University of Regensburg, Germany 

* Medard W. Welch Award Winner 


149 

SS+EM-WeA7 Electrostatic Interaction Mechanism for Near-surface Defect 

Redistribution, P. GORAI, E.G. SEEBAUER, University of Illinois at Urbana Champaign 

SS+EM-WeA8 Coverage-dependent Adsorption of a Bifunctional Molecule 

with a Rigid Spacer on the Ge(100)-2 × 1 Surface, B. SHONG, S.F. BENT, 

Stanford University 

SS+EM-WeA9 Invited 

2012 AVS Medard Welch Award Lecture: Chemical Functionalization of 

H-terminated Silicon Surfaces, Y.J. CHABAL*, The University of Texas at Dallas 

SS+EM-WeA11 Wet Chemical Approach for Amino Functionalization of 

Oxide-free Si(111) Surfaces, T. PEIXOTO, P. THISSEN, Y.J. CHABAL, University of 


SS+EM-WeA12 Ammonia- and Amine-based Chemical Modification of 

Silicon Surfaces, A.V. TEPLYAKOV, University of Delaware


Room: 21 - Session SS-WeA 


Catalysis on Metals and Alloys 

Moderator: G. Fisher, University of Michigan 

2:00 pm SS-WeA1 A Novel MoSx Structure with High Affinity to Adsorbate Binding, 

D.Z. SUN, W.H. LU, University of California Riverside, D. LE, University of Central Florida, Q. 

MA, University of California Riverside, M. AMANPOUR, University of Central Florida, S. 

BOBEK, J. MANN, University of California Riverside, T. RAMAN, University of Central 

Florida, L. BARTELS, University of California Riverside 

2:20 pm SS-WeA2 Atomic-Scale Determination of the Crystallographic Stacking at 

the Technologically-Important Cobalt-Copper Interface, E.A. LEWIS, C.H. 

SYKES, Tufts University 

2:40 pm SS-WeA3 Invited 

Understanding the Growth and Surface Activity of Oxide-supported 

Bimetallic Clusters, R.P. GALHENAGE, H. YAN, A. DUKE, K. XIE, D.A. CHEN, 

University of South Carolina 


Topic 

Room: 7 - Session TC+EM+AS-WeA 

Printable and Flexible Electronics 

Moderator: G.S. Herman, Oregon State University 

TC+EM+AS-WeA1 Invited 

Metal Oxides and Organic Materials for Printed Electronics, A. FACCHETTI, 

Polyera Corp. and Northwestern U. 


TC+EM+AS-WeA3 Ion Dependence of Gate Dielectric Behavior of Beta- 

Aluminas in Transparent Oxide Field-Effect Transistors, Y. LIU, B. ZHANG, 

H.E. KATZ, Johns Hopkins University 

3:00 pm Invited talk continued. TC+EM+AS-WeA4 Selection Rule of Preferred Doping Site for N-Type 

Transparent Conducting Oxides, S.-H. WEI, National Renewable Energy Laboatory, 

C. LI, J.B. LI, Institute of Semiconductor Physics, CAS, China 



4:00 pm SS-WeA7 Invited 

Synchrotrons, Catalysts and UOP: from Imaging to In Situ Spectroscopy, 

S.R. BARE, UOP LLC, a Honeywell Company 


4:40 pm SS-WeA9 Glycolaldehyde as a Probe Molecule for Biomass-derivatives, W. 

YU, M. BARTEAU, J. CHEN, University of Delaware 

5:00 pm SS-WeA10 Modifying Selectivity of Hydrocarbon Conversion Reactions by 

Alloying Sn and Pt: Benzene Formation from Acetylene, X. YANG, Princeton 

University, J. GAO, S. PODKOLZIN, Stevens Institute of Technology, B. KOEL, Princeton 

University 

5:20 pm SS-WeA11 Composition Spread Alloy Films for Study of Alloy Catalysis 

Across Composition Space, A.J. GELLMAN, B. FLEUTOT, P. KONDRATYUK, J.B. 

MILLER, G. GUMUSLU, Carnegie Mellon University 

5:40 pm SS-WeA12 Role of Dissociated Hydrogen in Stabilizing Catalytic Sites and 

Regulating Surface Reactions for Hydrogen Storage in Metal Hydrides, I. 

CHOPRA, University of Texas at Dallas, S. CHAUDHURI, Washington State University, J.-F. 

VEYAN, Y.J. CHABAL, University of Texas at Dallas 

150 


Single-Walled Carbon Nanotube Aerogel Based Elastic Conductors, K.H. 

KIM, Y. OH, I. LEE, M.F. ISLAM, Carnegie Mellon University 

TC+EM+AS-WeA9 Networked Metal Nanowire-Polymer Composites for 

Flexible, Transparent and Conducting Devices, S. NARAYANAN, S. FU, M.R. 

BOCKSTALLER, L.M. PORTER, Carnegie Mellon University 


Printing Photovoltaics, F.A.M. VAN HEST, National Renewable Energy Laboratory 



Thin Film 

Room: 11 - Session TF+AS-WeA 

Thin Films: Growth and Characterization-I 

Moderator: M.R. Davidson, University of Florida 

2:00 pm TF+AS-WeA1 Studying the Microstructure of Cu2ZnSn(S,Se)4 Thin Film 

Solar Cells, L. ZHANG, Y. CAO, D.H. ROSENFELD, M. LU, J. CASPAR, C. CHAN, 

DuPont Central Research and Development 

2:20 pm TF+AS-WeA2 Seed-Mediated Growth of 1D Pyrite (FeS2) Structures, Y.J. 

KWON, N. BERRY, M. LAW, J.C. HEMMINGER, University of California Irvine 

2:40 pm TF+AS-WeA3 Invited 

Investigation of Recrystallization in Low-Temperature Grown CdTe Solar 

Cells in Substrate and Superstrate Configuration, L. KRANZ, C. GRETENER, J. 

PERRENOUD, S. BUECHELER, A.N. TIWARI, EMPA, Switzerland 

Thin Film 

Room: 10 - Session TF+MI-WeA 

Thin Films for Memory and Data Storage 

Moderator: S. Gupta, The University of Alabama 

TF+MI-WeA1 Invited 

Spin Transport Properties and Applications in Magnetic Multilayers, R.H. 

VICTORA, S.H. HERNANDEZ, T. QU, University of Minnesota 


TF+MI-WeA3 Ta Seeded Ultrathin Free Layer for Fully Perpendicular 

Magnetic Tunnel Junctions, A. SINGH, A. NATARAJARATHINAM, B.D. CLARK, S. 

GUPTA, The University of Alabama 

3:00 pm Invited talk continued. TF+MI-WeA4 Epitaxial Fe38.5Pd61.5 Films Grown by Pulsed Laser 

Deposition: Structure and Properties, M.A. STEINER, R.B. COMES, J.A. FLORO, 

W.A. SOFFA, J.M. FITZ-GERALD, University of Virginia 



4:00 pm TF+AS-WeA7 High Quality ZnMgO Thin Films Grown on Sapphire and 

ZnO Substrates by Molecular Beam Epitaxy, M. WEI, R.C. BOUTWELL, W.V. 

SCHOENFELD, University of Central Florida 

4:20 pm TF+AS-WeA8 Epitaxial Growth of Zirconium Diboride Thin Film on Ge(111) 

Wafer, C. HUBAULT, A. BABA, A. FLEURENCE, Y. YAMADA-TAKAMURA, Japan 

Advanced Institute of Science and Technology 

4:40 pm TF+AS-WeA9 Effect of Growth Conditions on Cubic ZnMgO films, C. 

BOUTWELL, M. WEI, W.V. SCHOENFELD, University of Central Florida 

5:00 pm TF+AS-WeA10 Properties of Ytterium Doped Zinc Oxide Thin Films 

Deposited by r.f. Magnetron Sputtering, K. VANSANT, T. BARNES, J. BURST, J. 

DUENOW, T.A. GESSERT, National Renewable Energy Laboratory 

5:20 pm TF+AS-WeA11 Effect of Process Parameters on Molybdenum Thin Films 

and Development of Single Layer Molybdenum Film for CIGS Thin Film 

Solar Cells, S. PETHE, A. KAUL, N. DHERE, Florida Solar Energy Center, University of 


5:40 pm TF+AS-WeA12 Etching Mechanism of IGZO Thin Films in CF4/Ar Plasma 

with the Addition of Inert Gases, Y.H. JOO, J.C. WOO, Y.S. CHUN, H.J. KIM, C.I. 

KIM, Chung-Ang University, Republic of Korea 

151 

TF+MI-WeA7 Oxygen Reservoir Effect and its Impact on HfO2, C. VALLEE, C. 

MANNEQUIN, P. GONON, L. LATU-ROMAIN, LTM (CNRS / UJF-Grenoble1 / CEA), France, 

A. SALAÜN, H. GRAMPEIX, V. JOUSSEAUME, CEA, LETI, MINATEC Campus, France

Lunch 




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152

THURSDAY SPECIAL EVENTS 


7:00 a.m. Professional Leadership Committee Meeting and Breakfast—Café Waterside Restaurant (H) 

8:00 a.m. Advanced Surface Engineering Division Business Meeting—Meeting Room 1 (H) 

8:00 a.m. Advanced Surface Engineering Division Executive Committee Meeting (Lunch Offsite)—Meeting Room 1 (H) 

8:40 a.m. Peter Mark Award Lecture, C.H. Sykes, Tufts University—22 (CC) 


12:00 p.m. Exhibit Finale and Refreshments—West Exhibit Hall (CC) 

12:00 p.m. Surface Science Division Mort Traum Awards Ceremony—22 (CC) 

12:00 p.m. Plasma Science and Technology Division Coburn and Winters Award Ceremony—24 (CC) 

12:15 p.m. 2013 AVS Program Committee Chairs’ Lunch—Meeting Room 4 (H) 

12:15 p.m. AVS Business Meeting—25 (CC) 

6:00 p.m. Poster Session and Refreshments—Central Exhibit Hall (CC) 

6:30 p.m. 2012/2013 Program Committee Reception and Dinner—Meeting Room 4 (H) 

7:00 p.m. Surface Science Spectra Editorial Board Dinner—Meeting Room 3 (H) 






8:30 a.m. Surface Characterization of Biomaterials 

8:30 a.m. Atomic Layer Deposition 

THURSDAY SHORT COURSES 


COURSE HOURS: All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (lunch not included) 

153

NOTES 

154

Thursday Morning, November 1, 2012 


Room: 20 - Session AS-ThM 

Applications of Large Cluster Ion Beams 

Moderators: A.V. Walker, University of Texas at Dallas, C.M. Mahoney, 

Pacific Northwest National Laboratory, M.L. Pacholski, The Dow 

Chemical Company 

8:00 am AS-ThM1 Comparison of Primary Ion Beams for XPS Sputter Depth 

Profiling of Organic Samples, S.J. HUTTON, C.J. BLOMFIELD, S.J. PAGE, W. 

BOXFORD, Kratos Analytical Ltd., UK 

8:20 am AS-ThM2 Invited 

Molecular SIMS - Revolutionized by Cluster Primary Ion Beams?, J.C. 

VICKERMAN, The University of Manchester, UK 


Room: 14 - Session EM+SS+AS+NS-ThM 

Nanoelectronic Interfaces, Materials, and Devices 

Moderator: M. Filler, Georgia Institute of Technology 

EM+SS+AS+NS-ThM1 Invited 

Tensilely Strained Ge Nanomembranes for Applications in Group-IV 

Infrared Photonics, R. PAIELLA, Boston University 


8:40 am Invited talk continued. EM+SS+AS+NS-ThM3 Self-activating and Self-limiting Features of the 

Thermally Assisted Growth Mechanisms of Thin Oxide-, Nitride- and 

Carbide Films on Si Surfaces at Low Gas or Plasma Pressures, P. 

MORGEN, J. DREWS, R. DHIMAN, University of Southern Denmark, Z.S. LI, Aarhus 

University, Denmark 

9:00 am AS-ThM4 New Organic Reference Materials for Cluster Ion Sputter Depth 

Profiling, A.G. SHARD, S. SPENCER, S. SMITH, I.S. GILMORE, R. HAVELUND, National 

Physical Laboratory, UK 

9:20 am AS-ThM5 Characterization of Nano-objects with Nanoprojectile- 

Secondary Ion Mass Spectrometry, C.-K. LIANG, J.D. DEBORD, M. ELLER, S. 

VERKHOTUROV, E. SCHWEIKERT, Texas A&M University 

9:40 am AS-ThM6 Organic Solar Cell Composition Profiling by Large Clusters 

Ions: How can we Optimize the Information Retrieved?, T. CONARD, A. 

FRANQUET, E. VOROSHAZI, D. CHEYNS, P. FAVIA, W. VANDERVORST, IMEC, Belgium 

EM+SS+AS+NS-ThM4 Functional Conductive Polymer to Inexpensive and 

Portable Chemiresistive Biosensor, D. BHATTACHARYYA, K.K. GLEASON, 

Massachusetts Institute of Technology 

EM+SS+AS+NS-ThM5 Invited 

Semiconductor Nanomembranes for Biomedical Applications, J.A. 

ROGERS, University of Illinois at Urbana Champaign 




10:40 am AS-ThM9 Molecular Imaging of Cells and Tissues with Ar Cluster Ion 

Beams, J. MATSUO, S. NAKAGAWA, M. PY, T. AOKI, T. SEKI, Kyoto University, Japan 

11:00 am AS-ThM10 Observation of High Ionization Probability for 

Desorption/Ionization Induced by Neutral Cluster Impact and its 

Application in Bioanalytics, B.-J. LEE, M. BAUR, University of Applied Sciences 

Esslingen, Germany, C.R. GEBHARDT, Bruker Daltonik GmbH, Germany, M. DÜRR, 

University of Applied Sciences Esslingen, Germany 

11:20 am AS-ThM11 Analysis of Molecular Surfaces Using a Pulsed Beam of Large 

Argon Clusters, N. HAVERCROFT, ION-TOF USA, Inc., D. RADING, S. KAYSER, R. 

MOELLERS, F. KOLLMER, E. NIEHUIS, ION-TOF GmbH, Germany 

11:40 am AS-ThM12 Electrospray Droplet Impact/SIMS: Some Insights into the 

Collisional Events, K. HIRAOKA, Y. SAKAI, S. NINOMIYA, R. TAKAISHI, University of 

Yamanashi, Japan 

EM+SS+AS+NS-ThM9 Structure, Dynamics and Mechanism of a Single- 

Molecule Electric Motor, C.J. MURPHY, C.H. SYKES, Tufts University 

EM+SS+AS+NS-ThM10 Semiconductor Nanostructures for Efficient 

Thermoelectric Energy Conversion, Z. AKSAMIJA, University of Wisconsin 

Madison 

EM+SS+AS+NS-ThM11 UV Ozone Irradiation Induced Defect Formation in 

Graphene/PZT Devices, C.X. ZHANG, D.M. FLEETWOOD, M.L. ALLES, R.D. 

SCHRIMPF, Vanderbilt University, E.B. SONG, S. KIM, K. GALATSIS, K.L. WANG, 

University of California at Los Angeles, E.X. ZHANG, Vanderbilt University 

EM+SS+AS+NS-ThM12 Switching Molecular Kondo Effect by Chemical 

Reactions, H. KIM, ISSP, University of Tokyo, Japan, Y.H. CHANG, KAIST, Korea, M.H. 

CHANG, Korea University, Y.-H. KIM, KAIST, Korea, S.-J. KAHNG, Korea University 

12:00 pm EM+SS+AS+NS-ThM13 Quantifying the Local Seebeck Coefficient using 

Scanning Thermoelectric Microscopy (SThEM), J.C. WALRATH, Y.H. LIN, K.P. 

PIPE, R.S. GOLDMAN, University of Michigan 

155


Room: 9 - Session EM-ThM 

Processing for Ultra Low Power Electronics + 

Semiconductor Heterostructures I 

Moderators: S.A. Vitale, MIT Lincoln Laboratory, 

J.E. Ayers, University of Connecticut 

8:00 am EM-ThM1 Invited 

Advanced FinFET Process for 22nm and Beyond, M. MASAHARA, T. 

MATSUKAWA, Y. LIU, K. ENDO, S. O'UCHI, National Institute of AIST, Japan 


8:40 am EM-ThM3 PiezoMEMS Enabled, Ultra Low Power Mechanical Logic, R. 

PROIE, R. POLCAWICH, J. PULSKAMP, T. IVANOV, US Army Research Laboratory 

9:00 am EM-ThM4 Wideband Characterization for Optimized Performance in Low 

Voltage Low Power Applications, M. EMAM, Incize, Belgium, J.-P. RASKIN, 

Université Catholique de Louvain, Belgium 

9:20 am EM-ThM5 Ultra Low-Power (ULP) Current Logic Gates for Subthreshold- 

Triode Operation, K. LAM, Chinese University of Hong Kong, Hong Kong Special 

Administrative Region of China, T. MAK, Newcastle University, UK 

9:40 am EM-ThM6 Impact of Threading Dislocation Density and Dielectric Layer on 

I-V Characteristics of Schottky Diodes Fabricated from Ti and Epitaxially 

Grown p-Type Ge on Si, S. GHOSH, S.M. HAN, University of New Mexico 


Room: 15 - Session EN+NS-ThM 

Batteries and Fuel Cells 

Moderator: Y. Wu, Purdue University 

EN+NS-ThM1 Invited 

Advanced Polymer Electrolyte Materials for Fuel Cell Applications, A.M. 

HERRING, Colorado School of Mines 

EN+NS-ThM3 Rational Design of Competitive Electrocatalysts for 

Hydrogen Fuel Cells, S. STOLBOV, M. ALCANTARA ORTIGOZA, University of Central 

Florida 

EN+NS-ThM4 Invited 

Nanocomposite Materials for Lithium Ion Batteries, G. YUSHIN, Georgia 

Institute of Technology 


EN+NS-ThM6 Engineering LixAlySizO Ionic Conductive Thin Films by 

Atomic Layer Deposition for Lithium-ion Battery Applications, Y.-C. PERNG, 

J. CHO, D. MEMBRENO, N. CIRIGLIANO, B. DUNN, J.P. CHANG, University of California, 

Los Angeles 



10:40 am EM-ThM9 Invited 

Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and 

Semipolar GaN by Dislocation Glide, J. SPECK, University of California, Santa 

Barbara 

EN+NS-ThM9 Titanium Oxide and Lithium Titanium Oxide Coated 3D 

Nanoelectrodes for Li-ion Microbatteries, G. PATTANAIK, J. HAAG, M.F. 

DURSTOCK, Air Force Research Laboratory 

11:00 am Invited talk continued. EN+NS-ThM10 Designing Si-based Nanoarrays by Dynamic Shadowing 

Growth to Tailor the Performance of Li-ion Battery Anodes, Y.-P. HE, 

University of Georgia, B. YANG, University of Texas at Arlington, C.R. BECKER, Army 

Research Laboratory, K.-K. YANG, Binghamton University, C. BROWN, R. RAMASAMY, 

University of Georgia, H. WANG, Binghamton University, C.A. LUNDGREN, Army Research 

Laboratory, Y.-P. ZHAO, University of Georgia 

11:20 am EM-ThM11 Electronically Unmixed State of a Statistical Two-Dimensional 

Ga-Si Semiconductor Alloy on Si(111), P. EBERT, S. LANDROCK, 

Forschungszentrum Jülich, Germany, Y. JIANG, Peking University, China, K.H. WU, Chinese 

Academy of Sciences, China, E.G. WANG, Peking University, China, R.E. DUNIN- 

BORKOWSKI, Forschungszentrum Jülich, Germany 

11:40 am EM-ThM12 Atomistic Analysis of Ge on a-SiO2 using an Emipirical 

Interatomic Potential to Describe Selective Epitaxial Growth, Y. CHUANG, 

University of Pennsylvania, Q. LI, D. LEONHARDT, S.M. HAN, University of New Mexico, T. 

SINNO, University of Pennsylvania 

12:00 pm 


156 

EN+NS-ThM11 The Contribution of Auger Electron Spectroscopy to a 

Better Understanding of the Lithiation Process Occurring in Si-based 

Anodes Designed for Li-ion Batteries, E. RADVANYI, E. DE VITO, W. PORCHER, 

S. JOUANNEAU, CEA Grenoble, France 

EN+NS-ThM12 Organic/Inorganic Composite Materials as Anodes for 

Lithium Ion Batteries, M. THAKUR, R.B. PERNITES, Rice University, M. ISAACSON, 

Lockheed Martin Space Systems, M.S. WONG, Rice University, S.L. SINSABAUGH, 

Lockheed Martin MS2, S.L. BISWAL, Rice University


Room: 16 - Session ET+NS+EM-ThM 

Electron Transport at the Nanoscale: Nanowires and 

Junctions 

Moderators: K. Clark, Oak Ridge National Laboratory, 

A.-P. Li, Oak Ridge National Laboratory 

8:00 am ET+NS+EM-ThM1 Invited 

Functional Imaging of Semiconductor Nanowires and Devices, L.J. 

LAUHON, Northwestern University 


Room: 13 - Session GR+AS+NS+SS-ThM 

Graphene Nanostructures 

Moderator: A. Kis, EPFL, Switzerland 

GR+AS+NS+SS-ThM1 Atomic and Electronic Structures of Graphene 

Nanoribbon made by MBE on Vicinal SiC Substrate, F. KOMORI, K. 

NAKATSUJI, T. YOSHIMURA, University of Tokyo, Japan, T. KAJIWARA, K. TAKAGI, S. 

TANAKA, Kyushu University, Japan 

8:20 am Invited talk continued. GR+AS+NS+SS-ThM2 Carrier Transport Behavior of Carbon Nanotube 

Transistors with Single Semiconducting and Metallic Tube, P. SAKALAS, 

Technische Universität Dresden, Germany 

8:40 am ET+NS+EM-ThM3 Electronic Transport and Structure Relations in Self- 

Assembled GdSi2 Quantum Wires, S.Y. QIN, T. KIM, Oak Ridge National 

Laboratory, Y. ZHANG, W. OUYANG, University of California Irvine, H. WEITERING, The 

University of Tennessee, C. SHIH, The University of Texas at Austin, A.P. BADDORF, Oak 

Ridge National Laboratory, R. WU, University of California Irvine, A.-P. LI, Oak Ridge 


9:00 am ET+NS+EM-ThM4 Multi-Segment Nanowire Heterojunctions of AuGe and 

Ge: Fabrication and Electrical Transport, X.D. LI, G.W. MENG, Chinese Academy 

of Sciences, China, S.Y. QIN, A.-P. LI, Oak Ridge National Laboratory 

9:20 am ET+NS+EM-ThM5 Single Charge Nano Memory using Nano Carbon 

Material, K. MATSUMOTO, T. KAMIMURA, Osaka University, Japan 

9:40 am ET+NS+EM-ThM6 Combining Atomic Structure, Local Band Alignment, and 

Electron Transport through Individual Semiconductor Nanowires using 

Scanning Tunneling Microscopy, R. TIMM, O. PERSSON, M. HJORT, M.T. 

BORGSTRÖM, L. SAMUELSON, A. MIKKELSEN, Lund University, Sweden 

GR+AS+NS+SS-ThM3 Fabrication of Chemically–isolated Graphene 

Nanoribbons (GNRs) by Scanning Probe Nanolithography using a 

Heated Probe, W.K. LEE, J.T. ROBINSON, R. STINE, C.R. TAMANAHA, D. 

GUNLYCKE, Naval Research Laboratory, M. HAYDELL, E. CIMPOIASU, U.S. Naval 

Academy, W. KING, University of Illinois at Urbana Champaign, P.E. SHEEHAN, Naval 


GR+AS+NS+SS-ThM4 Choosing Electronic and Magnetic Properties of a 

Graphene Line Defect through Selective Adsorption, S. VASUDEVAN, George 

Washington University, D. GUNLYCKE, C.T. WHITE, Naval Research Laboratory 

GR+AS+NS+SS-ThM5 Invited 

Growth of a Linear Topological Defect in Graphene as a Gate-tunable 

Valley Valve, A. ZETTL, J.-H. CHEN, N. ALEM, Univ. of California at Berkeley, Lawrence 

Berkeley Lab, G. AUTES, F. GARGIULO, Ecole Polytechnique Fédérale de Lausanne 

(EPFL), Switzerland, A. GAUTAM, M. LINCK, Lawrence Berkeley National Lab, C. 

KISIELOWSKI, Lawrence Livermore National Lab, O.V. YAZYEV, Ecole Polytechnique 

Fédérale de Lausanne (EPFL), Switzerland, S.G. LOUIE, Univ. of California at Berkeley, 

Lawrence Berkeley Lab 




10:40 am ET+NS+EM-ThM9 Point-Contact Spectroscopy Study of Topological 

Insulators and Superconductors, Z. JIANG, Georgia Institute of Technology 

11:00 am ET+NS+EM-ThM10 Identifying and Measuring the State Variables in TaOx 

Memristors, P.R. MICKEL, M. MARINELLA, C.D. JAMES, Sandia National Laboratories 

11:20 am ET+NS+EM-ThM11 Terahertz Spectroscopy and Carrier Dynamics of Al 

Doped ZnO Nanowires, S. BALCI, W. BAUGHMAN, D.S. WILBERT, G. SHEN, N. 

DAWAHRE, P. KUNG, S.M. KIM, The University of Alabama 

11:40 am ET+NS+EM-ThM12 Probing Surface-Independent Minority Carrier Transport 

in Semiconductor Nanowires using Kelvin Probe Microscopy, A. SOUDI, C. 

HSU, Y. GU, Washington State University 

12:00 pm 


157 

GR+AS+NS+SS-ThM9 Crystalline and Electrical Properties of Vertically- 

Laminated Carbon Nanowalls formed by Two-Step Growth Method, H. 

KONDO, T. KANDA, Nagoya University, Japan, M. HIRAMATSU, Meijo University, Japan, K. 

ISHIKAWA, M. SEKINE, M. HORI, Nagoya University, Japan 

GR+AS+NS+SS-ThM10 Surface Modification of Vertically Oriented 

Graphene Electrochemical Double-Layer Capacitors, R.A. QUINLAN, Naval 

Surface Warfare Center, Carderock Division, M. CAI, The College of William and Mary, A.N. 

MANSOUR, Naval Surface Warfare Center, Cardercock Division, R.A. OUTLAW, The 

College of William and Mary 

GR+AS+NS+SS-ThM11 Invited 

Electronic Properties and Device Applications of Wafer-Scale Graphene 

Nanoribbons, D. JENA, University of Notre Dame 


8:00 am 


Room: 19 - Session HI+AS+BI+NS-ThM 

Imaging and Lithography with the Helium Ion Microscope 

Moderators: A. Gölzhäuser, University of Bielefeld, Germany, 

V.S. Smentkowski, General Electric Global Research Center 

Biofilms and Biofouling: Marine Medical Energy Focus 

Topic 

Room: 23 - Session MB+BI-ThM 

Biofilms and Biofouling in Medicine 

Moderator: L. Hanley, University of Illinois at Chicago 

8:20 am MB+BI-ThM2 Simple and Versatile Approaches to Design Oligoethylene 

Based Self-Assembled Monolayers using Thiolene Chemistry on 

Different Metal Oxide Surfaces: Impact on Protein Adsorption, A. 

GALTAYRIES, A. DELLINGER, Chimie ParisTech (ENSCP), France, V. SEMETEY, Institut 

Curie, France 

8:40 am HI+AS+BI+NS-ThM3 Invited 

Helium Ion Microscopy of Photonic Structures in Biological Systems, S.A. 

BODEN, A. ASADOLLAHBAIK, H.N. RUTT, D.M. BAGNALL, University of Southampton, UK 

MB+BI-ThM3 Antibacterial Studies of Plasma Polymerised Cineole Thin 

Films, A. PEGALAJAR-JURADO, Swinburne University of Technology, Australia, C.D. 

EASTON, CSIRO Materials Science and Engineering, Australia, S.L. MCARTHUR, 

Swinburne University of Technology, Australia 

9:00 am Invited talk continued. MB+BI-ThM4 Invited 

Robustness Analysis of Biofilm Antibiotic Tolerance, R.P. CARLSON, 

Montana State University 

9:20 am HI+AS+BI+NS-ThM5 Imaging of Carbon Nanomembranes (CNM) and 

Graphene with Helium Ion Microscopy, H. VIEKER, A. BEYER, A. POLINA, A. 

WILLUNAT, N.-E. WEBER, M. BÜENFELD, A. WINTER, X. ZHANG, M. AI, A. TURCHANIN, 

A. GÖLZHÄUSER, Bielefeld University, Germany 

9:40 am HI+AS+BI+NS-ThM6 Imaging of Graphene Films by Helium Ion Microscope, 

S. OGAWA, T. IIJIMA, M. HAYASHIDA, S. NAKAHARA, S. SATO, AIST Japan 


MB+BI-ThM6 Analysis of Force Curves of Pseudomonas Aeruginosa 

obtained by Atomic Force Microscopy, E.V. ANDERSON, R.L. GADDIS, T.A. 

CAMESANO, N.A. BURNHAM, Worcester Polytechnic Institute 



10:40 am HI+AS+BI+NS-ThM9 Invited 

Dopant Contrast in Helium Ion Microscopy, Y. CHEN, H. ZHANG, D. FOX, C.C. 

FAULKNER, J. WANG, J. BOLAND, J. DONEGAN, Trinity College, Ireland 


11:20 am HI+AS+BI+NS-ThM11 High Resolution Patterning of Carbon 

Nanomembranes and Graphene via Extreme UV Interference 

Lithography: A Helium Ion Microscopy Study, A. WINTER, A. WILLUNAT, A. 

BEYER, University of Bielefeld, Germany, Y. EKINCI, Paul Scherrer Institute, Switzerland, A. 

GÖLZHÄUSER, A. TURCHANIN, University of Bielefeld, Germany 

11:40 am HI+AS+BI+NS-ThM12 Application of Helium Ion Microscope on Processing 

and Characterization of Nano Wires, H.X. GUO, S. NAGANO, K. ONISHI, D. 

FUJITA, National Institute for Materials Science (NIMS), Japan 

12:00 pm 


158 

MB+BI-ThM9 Invited 

Light and Dark Biocidal Activity of Conjugated Polyelectrolytes, K. 

SCHANZE, University of Florida, D.G. WHITTEN, T. CORBITT, E. JI, D. DASCIER, 

University of New Mexico, A. PARTHASARATHY, S. GOSWAMI, University of Florida 

MB+BI-ThM11 Mechanisms of Antimicrobial Activity of Quaternary 

Ammonium Compounds in Solution and Immobilized on a Surface, H.C. 

VAN DER MEI, University Medical Center Groningen, The Netherlands 

MB+BI-ThM12 Combinatorial Discovery of Materials That Resist Bacterial 

Adhesion, A.L. HOOK, C. CHANG, J. YANG, University of Nottingham, UK, R. LANGER, 

D.G. ANDERSON, Massachusetts Institute of Technology, S. ATKINSON, P. WILLIAMS, 

M.C. DAVIES, M.R. ALEXANDER, University of Nottingham, UK


Room: 6 - Session MI+SP+AS-ThM 

Emerging Probes in Magnetic Imaging, Reflectometry and 


Moderators: Z. Gai, Oak Ridge National Laboratory, 

V. Lauter, Oak Ridge National Laboratory 

8:00 am MI+SP+AS-ThM1 Invited 

Toward Microscopy with Direct Chemical and Magnetic Contrast at the 

Atomic Level, V. ROSE, Argonne National Laboratory 


Room: 12 - Session NS-ThM 

Nanoscale Imaging and Microscopy 

Moderator: N. Camillone, Brookhaven National Laboratory 

NS-ThM1 Spin Friction Observed on the Atomic Scale, R. WIESENDANGER, B. 

WOLTER, A. KUBETZKA, K. VON BERGMANN, Y. YOSHIDA, University of Hamburg, 

Germany, S.-W. HLA, Ohio University 

8:20 am Invited talk continued. NS-ThM2 Observing Mineral Reactions in Supercritical Carbon Dioxide 

Utilizing High Pressure Atomic Force Microscopy, A.S. LEA, M. XU, K.M. 

ROSSO, Pacific Northwest National Laboratory 


Effect of Sub-Micrometer Scale Magnetic Inhomogeneity on the 

Magnetoelectric Coupling in Manganites, A. BISWAS, University of Florida 



Impact of Interfacial Magnetism on Magnetocaloric Properties of Thin 

Film Heterostructures, C.W. MILLER, University of South Florida 

NS-ThM3 Invited 

Resolving Amorphous Solids - The Atomic Structure of Glass, M. HEYDE, 

L. LICHTENSTEIN, H.J. FREUND, Fritz-Haber-Institute, Germany 

NS-ThM5 Femtosecond Time-Resolved Scanning Tunneling Microscopy 

on Nanostructures, H. SHIGEKAWA, University of Tsukuba, Japan 

9:40 am Invited talk continued. NS-ThM6 Unusual Island Formations of Iridium on Ge(111) Studied by 

STM, M. VAN ZIJLL, C. MULLET, B. STENGER, E. HUFFMAN, D. LOVINGER, W. MANN, 

S. CHIANG, University of California, Davis 




Polarized Neutron Reflectometry on Exchange Biased Thin Films, K. 

TEMST, KU Leuven, Belgium 

NS-ThM9 Turning STM Images Into Chemical Understanding: Atomically 

Flat Si(100) Reveals the Mechanism of Silicon Oxidation, M.A. HINES, M.F. 

FAGGIN, K. BAO, A. GUPTA, B.S. ALDINGER, Cornell University 

11:00 am Invited talk continued. NS-ThM10 Spectroscopic Imaging of Silicon-Hafnia Interfaces, C. GUEDJ, H. 

GRAMPEIX, C. LICITRA, E. MARTINEZ, CEA, LETI, MINATEC Campus, France 

11:20 am MI+SP+AS-ThM11 Soft X-ray Microscopy to Study Complexity, Stochasticity 

and Functionality in Magnetic Nanostructures, P. FISCHER, M.-Y. IM, Lawrence 

Berkeley National Lab, S.-K. KIM, Seoul National University, Republic of Korea 

11:40 am MI+SP+AS-ThM12 Elemental and Magnetic Contrast using X-ray Excited 

Luminescence Microscopy, R.A. ROSENBERG, S. ZOHAR, D. KEAVNEY, Argonne 

National Laboratory, A. MASCARENHAS, M. STEINER, National Renewable Energy 

Laboatory, D. ROSENMANN, R.S. DIVAN, Argonne National Laboratory 

12:00 pm 


159 

NS-ThM11 Atom Probe Tomography of AlInN/GaN based HEMT 

Structures, N. DAWAHRE, G. SHEN, P. TOLMER, S.M. KIM, P. KUNG, University of 

Alabama, Tuscaloosa 

NS-ThM12 Pit Initiation at MnS Nano-Inclusions in Carbon Steel under 

Exposure to Sulfate-Reducing Bacterium D. alkanexedens, J.S. HAMMOND, 

Physical Electronics, B.H. DAVIS, Z. SUO, Montana State University, I. BEECH, University of 

Oklahoma, D.F. PAUL, Physical Electronics, R. AVCI, Montana State University


Room: 24 - Session PS1-ThM 

Plasma Processing for Disruptive Technologies (NVM, TSV, 

etc.) 

Moderator: S. Hamaguchi, Osaka University, Japan 


Room: 25 - Session PS2-ThM 

Low Damage Processing 

Moderator: E.A. Joseph, IBM T.J. Watson Research Center 

8:00 am PS2-ThM1 Invited 

New Approaches for Overcoming Current Issues of Plasma Sputtering 

Process during Organic Based Micro-Electronic Device Fabrication : 

Room Temperature & Plasma Damage Free, M. HONG, Korea University 

8:20 am PS1-ThM2 Damage Free Cryogenic Etching of Porous Organosilica 

Ultralow-k Film, L. ZHANG, IMEC, Belgium, R. LJAZOULI, T. TILLOCHER, P. 

LEFAUCHEUX, R. DUSSART, GREMI CNRS/Université d'Orléans, France, Y. 

MANKELEVICH, Moscow State University, Russia, J.-F. DE MARNEFFE, S. DE GENDT, 

M.R. BAKLANOV, IMEC, Belgium 

8:40 am PS1-ThM3 Deep GaN Etching : Role of SiCl4 in Plasma Chemistry, J. 

LADROUE, GREMI - STMicroelectronics, France, M. BOUFNICHEL, STMicroelectronics, 

France, T. TILLOCHER, P. LEFAUCHEUX, P. RANSON, R. DUSSART, GREMI - Polytech 

Orleans/CNRS, France 

9:00 am PS1-ThM4 Flux Controlled High Density Nitrogen Plasma for Synthesis of 

Nitrogen Atom Endohedral Fullerene, S.C. CHO, Tohoku University, Japan, T. 

KANEKO, Tohuku University, Japan, R. HATAKEYAMA, Tohoku University, Japan 

9:20 am PS1-ThM5 Etching Reaction Analysis of CoFeB by Carbon Monoxide / 

Methyl Alcohol Based Plasmas, K. KARAHASHI, T. ITO, S. HAMAGUCHI, Osaka 


9:40 am PS1-ThM6 The Etching Characteristics of Flexible Substrate in Inductively 

Coupled Plasma System for Flexible Electronics, Y.S. CHUN, Y.H. JOO, C.I. 

KIM, Chung-Ang University, Republic of Korea 


PS2-ThM3 Novel Inward Plasma Etching System for Failure Analysis in 

Nano-Scale Semiconductor Devices, T. SHIMIZU, T. HORIE, Y. NAITOH, AIST, 

Japan, S. TAKAHASHI, C. IWASE, Y. SHIRAYAMA, S. YOKOSUKA, K. KASHIMURA, S. 

SHIMBORI, H. TOKUMOTO, Sanyu Co. Ltd., Japan 

PS2-ThM4 Effect of Open Area Ratio and Pattern Structure on 

Fluctuations in Critical Dimension and Si Recess, N. KUBOI, T. TATSUMI, M. 

FUKASAWA, J. KOMACHI, T. KINOSHITA, H. ANSAI, H. MIWA, Sony Corporation, Japan 

PS2-ThM5 Control of Surface Properties on Plasma-Etched Gallium 

Nitride (GaN), R. KOMETANI, S. CHEN, J. PARK, J. CAO, Y. LU, K. ISHIKAWA, K. 

TAKEDA, H. KONDO, H. AMANO, M. SEKINE, M. HORI, Nagoya University, Japan 

PS2-ThM6 New Method of Damaged Layer Removal by Atomic Layer 

Etching for Interconnection in Semiconductor, J.K. KIM, Samsung Electronics 

Co. Ltd., Republic of Korea, C.K. KIM, K.S. MIN, Sungkyunkwan University, Republic of 

Korea, S.I. CHO, S.W. NAM, Samsung Electronics Co. Ltd., Republic of Korea, G.Y. YEOM, 




10:40 am PS1-ThM9 Invited 

Plasma Process Developments for Spintronics Devices, K. KINOSHITA, 

Tohoku University, Japan 

PS2-ThM9 Theoretical Calculation of Neutralization Efficiency of Positive 

and Negative Chlorine Ions with Consideration of Excited States, S. 

OHTSUKA, N. WATANABE, Mizuho Information & Research Institute, Inc., Japan, T. 

KUBOTA, Tohoku University, Japan, T. IWASAKI, Y. IRIYE, K. ONO, Mizuho Information & 

Research Institute, Inc., Japan, S. SAMUKAWA, Tohoku University, Japan 

11:00 am Invited talk continued. PS2-ThM10 High-aspect Ratio and Diameter Controlled GaAs/AlGaAs 

Nano-Pillar Fabrication using Defect-free Neutral Beam Etching and Biotemplate 

Process, Y. TAMURA, M. IGARASHI, M.E. FAUZI, W. HU, Tohoku University, 

Japan, I. YAMASHITA, Nara Institute of Science and Technology, Japan, S. SAMUKAWA, 

Tohoku University, Japan 

11:20 am PS1-ThM11 Predictions of the Etch Behavior of Complex Oxide Films for 

High-k and Multiferroic Applications, N. MARCHACK, J. CHEN, J.P. CHANG, 

University of California at Los Angeles 

11:40 am PS1-ThM12 Sub-30nm Pitch Patterning of FEOL Materials for 

Aggressively Scaled CMOS Devices for 10 nm Node and Beyond, H. 

MIYAZOE, S. ENGELMANN, H. TSAI, M. BRINK, B.N. TO, IBM T.J. Watson Research 

Center, J. CHENG, C. LIU, IBM Research - Almaden, W.S. GRAHAM, E.M. SIKORSKI, M.A. 

GUILLORN, N.C.M. FULLER, E.A. JOSEPH, IBM T.J. Watson Research Center 

12:00 pm 


PS2-ThM11 3-Dimensional and Defect-free Neutral Beam Etching for 

MEMS Applications, Y. YANAGISAWA, Tohoku University, Japan, T. KUBOTA, 

Tohoku University and BEANS Project, Japan, B. ALTANSUKH, Tohoku University, Japan, 

K. MIWA, BEANS Project, Japan, S. SAMUKAWA, Tohoku University and BEANS Project, 

Japan 

PS2-ThM12 Effective Treatments Removing a Damage Layer Induced by 

Dry Etch in a 3D Fin-FET, M. KIM, J.Y. LEE, G.J. MIN, Samsung Electronics Co. Ltd., 


160


Room: 21 - Session SS+EN+OX-ThM 

Catalysis and Photocatalysis on Oxides 

Moderator: Z. Dohnalek, Pacific Northwest National Laboratory 

8:00 am SS+EN+OX-ThM1 Invited 

Photoelectrochemical Water Splitting under Sunlight Irradiation using 

Oxynitride Electrodes Fabricated by Particle Transfer Method, K. DOMEN, 

The University of Tokyo, Japan 


Room: 22 - Session SS-ThM 

Molecular Films: Chirality & Electronic Features 

Moderators: A.J. Gellman, Carnegie Mellon University, 

S.L. Tait, Indiana University - Bloomington 

SS-ThM1 Smooth and Transparent Organic Surfaces showing 

Exceptional Dynamic Dewetting Behavior Toward Nonpolar Liquids ~ 

Oleophobicity is Independent on Length of Perfluoroalkyl Groups ~, A. 

HOZUMI, J. PARK, D.F. CHENG, B. MASHEDER, C. URATA, AIST, Japan 

8:20 am Invited talk continued. SS-ThM2 Enantioselective Separation on Chiral Au Nanoparticles, N. 

SHUKLA, N. KHOSLA, N. ONDECK, A.J. GELLMAN, Carnegie Mellon University 

8:40 am SS+EN+OX-ThM3 Multi-step Photooxidation of CO on TiO2(110), G.A. 

KIMMEL, N.G. PETRIK, Pacific Northwest National Laboratory 

9:00 am SS+EN+OX-ThM4 Design of Band Engineered Photocatalysts using 

Titanium Dioxide, S.W. ONG, D.E. BARLAZ, E.G. SEEBAUER, University of Illinois at 

Urbana Champaign 

9:20 am SS+EN+OX-ThM5 Adsorption of CO2 on Oxygen Precovered TiO2(110) 

Surfaces, X. LIN, Y. YOON, N.G. PETRIK, G.A. KIMMEL, Z. LI, Z.-T. WANG, B.D. KAY, I. 

LYUBINETSKY, R. ROUSSEAU, Z. DOHNALEK, Pacific Northwest National Laboratory 

9:40 am SS+EN+OX-ThM6 Probe of NH3 and CO Adsorption on the Very Outermost 

Surface of a Porous TiO2 Adsorbent Using Photoluminescence 

Spectroscopy, A. STEVANOVIC, J.T. YATES, JR., University of Virginia 

SS-ThM3 Invited 

2012 AVS Peter Mark Award Lecture: Effects of Chirality in Electron 

Tunneling, Molecular Excitation and Rotation, C.H. SYKES*, Tufts University 


SS-ThM5 Single-Site Studies of Chirality Transfer Complexes on Chirally 

Modified Pt(111), J.-C. LEMAY, P.H. MCBREEN, V. DEMERS-CARPENTIER, G. 

GOUBERT, Y. DONG, Université Laval, Canada, B. HAMMER, A.M.H. RASMUSSEN, L. 

FERRIGHI, Aarhus University, Denmark, F. MASINI, Université Laval, Canada 

SS-ThM6 Chirality in Flatland: 2D Crystallization, Single-Molecule 

Dynamics and Unidirectional Rotors, K.-H. ERNST, EMPA, Switzerland 



10:40 am SS+EN+OX-ThM9 Site-Specific Photocatalytical Reactions of O2 on 

TiO2(110), Z.-T. WANG, Pacific Northwest National Laboratory, N.A. DESKINS, Worcester 

Polytechnic Institute, I. LYUBINETSKY, Pacific Northwest National Laboratory 

11:00 am SS+EN+OX-ThM10 Bond Selectivity in the Activation of n-alkanes on 

PdO(101), J.F. WEAVER, A. ANTONY, C. HAKANOGLU, F. ZHANG, University of 

Florida, A. ASTHAGIRI, The Ohio State University 

11:20 am SS+EN+OX-ThM11 Photoresponse, Electronic Transport and Magnetic 

Properties of Ti-doped (CrxFe1-x)2O3, S.E. CHAMBERLIN, T.C. KASPAR, M.E. 

BOWDEN, V. SHUTTHANANDAN, S.A. CHAMBERS, M.A. HENDERSON, Pacific Northwest 


11:40 am SS+EN+OX-ThM12 A Nonadiabatic Mechanisms of Inequilibrium Charge 

Carriers Production in Pd/n-GaP Schottky Nanodiode Exposed to Atomic 

Hydrogen, S.V. SIMCHENKO, V. STYROV, Azov State Technical University, Ukraine 

12:00 pm 

* Peter Mark Memorial Award Winner 


161 

SS-ThM9 Invited 

Functional Molecular Layers for Energy Applications, R.J. HAMERS, 

University of Wisconsin-Madison 


SS-ThM11 Atomic Study for P-type Doping Process of CuPc Molecules 

with STM, J.H. PARK, K. TYLER, C.T. WILLIAM, A.C. KUMMEL, University of California 

San Diego 

SS-ThM12 Formation of 2D Superstructure with Wide Band-gap n-type 

Behavior, T.K. SHIMIZU, J. JUNG, RIKEN, Japan, T. OTANI, University of Tokyo, Japan, 

Y.-K. HAN, Korea Basic Science Institute, M. KAWAI, University of Tokyo, Japan, Y. KIM, 

RIKEN, Japan


Topic 

Room: 7 - Session TC+EM+AS+TF+EN-ThM 

Transparent Conductors and Devices 

Moderator: L.M. Porter, Carnegie Mellon University 

Thin Film 

Room: 10 - Session TF+EM+SE+NS-ThM 

Nanostructuring Thin Films 

Moderator: R.C. Davis, Brigham Young University 

8:00 am TF+EM+SE+NS-ThM1 Invited 

Plasma Effects in Nanostructuring Thin Films, K. OSTRIKOV, CSIRO Materials 

Science and Engineering, Australia 

8:20 am TC+EM+AS+TF+EN-ThM2 High Conductivity in Thin ZnO:Al Deposited by 

Means of the Expanding Thermal Plasma Chemical Vapor Deposition, K. 

SHARMA, H.C.M. KNOOPS, M.V. PONOMAREV, Eindhoven University of Technology, The 

Netherlands, R. JOY, M. VELDEN, D. BORSA, R. BOSCH, Roth and Rau BV, Germany, 

W.M.M. KESSELS, M. CREATORE, Eindhoven University of Technology, The Netherlands 

8:40 am TC+EM+AS+TF+EN-ThM3 Invited 

Recent Progress in Oxide Semiconductors and Oxide TFTs, H. HOSONO, 

Tokyo Institute of Technology, Japan 


TF+EM+SE+NS-ThM3 Directed, Liquid Phase Assembly of Patterned 

Metallic Films by Pulsed Laser Dewetting, Y. WU, University of Tennessee, J.D. 

FOWLKES, M. FUENTES-CABRERA, Oak Ridge National Laboratory, N.A. ROBERTS, P.D. 

RACK, University of Tennessee 

9:00 am Invited talk continued. TF+EM+SE+NS-ThM4 Nanosphere Lithography for Bit Patterned Media, A.G. 

OWEN, H. SU, A.M. MONTGOMERY, S.M. KORNEGAY, S. GUPTA, University of Alabama 

9:20 am TC+EM+AS+TF+EN-ThM5 Surface Functionalization of Amorphous Zinc Tin 

Oxide Thin Film Transistors, G.S. HERMAN, M.S. RAJACHIDAMBARAM, Oregon 

State University, A. PANDEY, S. VILAYURGANAPATHY, P. NACHIMUTHU, S. 

THEVUTHASAN, Pacific Northwest National Laboratory 

9:40 am TC+EM+AS+TF+EN-ThM6 Work Function and Valence Band Structure of 

Oxide Semiconductors and Transparent Conducting Oxides Grown by 

Atomic Layer Deposition, A. YANGUAS-GIL, Argonne National Laboratory, R.T. 

HAASCH, University of Illinois at Urbana Champaign, J.A. LIBERA, J.W. ELAM, Argonne 


TF+EM+SE+NS-ThM5 Effects of Nanometer Scale Periodicity on the Self- 

Propagating Reaction Behaviors of Sputter-Deposited Multilayers, D. 

ADAMS, R. REEVES, Sandia National Laboratories 

TF+EM+SE+NS-ThM6 Ag Nanoparticles Supported by (111) Facets on 

Biaxial CaF2 Nanoblades, M. AUER, D. YE, Virginia Commonwealth University 



10:40 am TC+EM+AS+TF+EN-ThM9 Invited 

Low Temperature, High Performance Solution-Processed Metal Oxide 

Thin Film Transistors formed by a ‘Sol-Gel on Chip’ Process, H. 

SIRRINGHAUS, University of Cambridge, UK 


11:20 am TC+EM+AS+TF+EN-ThM11 In Situ Measurements of Interface States and 

Junction Electrical Properties of Electrically Biased Metal / β-Ga2O3 

Structures, H. PHAM, X. ZHENG, B. KRUEGER, M.A. OLMSTEAD, F.S. OHUCHI, 


11:40 am TC+EM+AS+TF+EN-ThM12 Atmospheric Pressure Dielectric Barrier 

Discharge (DBD) Post Annealing of Aluminium Doped Zinc Oxide (AZO) 

Films, Y.L. WU, E. RITZ, J. HONG, T.S. CHO, D.N. RUZIC, University of Illinois at Urbana 

Champaign 

12:00 pm 


162

Thin Film 

Room: 11 - Session TF+NS+EM-ThM 

Thin Films: Growth and Characterization-II 

Moderator: C. Vallee, LTM - MINATEC - CEA/LETI, France 

8:00 am TF+NS+EM-ThM1 Plasma-enhanced Atomic Layer Epitaxy of AlN Films on 

GaN, N. NEPAL, J.K. HITE, N. MAHADIK, M.A. MASTRO, C.R. EDDY, JR., U.S. Naval 


8:20 am TF+NS+EM-ThM2 In Situ Infrared Spectroscopy Study of Cobalt Silicide 

Thin Film Growth by Atomic Layer Deposition, K. BERNAL RAMOS, University 

of Texas at Dallas, M.J. SALY, SAFC Hitech, J. KWON, University of Texas at Dallas, M.D. 

HALLS, Materials Design Inc., R.K. KANJOLIA, SAFC Hitech, Y.J. CHABAL, University of 


8:40 am TF+NS+EM-ThM3 Invited 

Thin Film Growth: From Gas Phase to Solid Phase – Links and Control, 

P. RAYNAUD, CNRS and University Paul Sabatier – Toulouse – France 


9:20 am TF+NS+EM-ThM5 Investigation of Precursor Infiltration and ALD Growth on 

Polymers and Effect on Fiber Mechanical Properties, R.P. PADBURY, J.S. 

JUR, North Carolina State University 

9:40 am TF+NS+EM-ThM6 Atomic Layer Deposition Enabled Synthesis of 

Nanostructured Composite BiFeO3/CoFe2O4 Thin Films for Multiferroic 

Applications, C.D. PHAM, J.P. CHANG, University of California at Los Angeles 

10:00 am BREAK - Complimentary Coffee in Exhibit Hall 

10:20 am BREAK - Complimentary Coffee in Exhibit Hall 


10:40 am TF+NS+EM-ThM9 In Situ Infrared Spectroscopic Study of Atomic Layer 

Deposited TiO2 Thin Film Formation Using Non-Aqueous Routes, K. 

BERNAL RAMOS, University of Texas at Dallas, G. CLAVEL, Université Montpellier 2, 

France, C. MARICHY, Universidade de Aveiro / CICECO, Portugal, W. CABRERA, The 

University of Texas at Dallas, N. PINNA, Universidade de Aveiro / CICECO, Portugal, Y.J. 

CHABAL, University of Texas at Dallas 

11:00 am TF+NS+EM-ThM10 Nanomechanical Shaft-Loading Blister Testing of Thin 

Films, M. BERDOVA, A. BABY, J. LYYTINEN, Aalto University, Finland, K. GRIGORAS, L. 

KILPI, H. RONKAINEN, VTT Technical Research Center, Finland, J. KOSKINEN, S. 

FRANSSILA, Aalto University, Finland 

11:20 am TF+NS+EM-ThM11 Phase Formation and Thermal Stability of Arc- 

Evaporated ZrAlN Thin Films, L. ROGSTRÖM, Linköping University, Sweden, M.P. 

JOHANSSON, SECO Tools AB, Sweden, M. AHLGREN, Sandvik Tooling AB, Sweden, N. 

GHAFOOR, Linköping University, Sweden, J. ALMER, Advanced Photon Source, Argonne 

National Lab, L. HULTMAN, M. ODÉN, Linköping University, Sweden 

11:40 am TF+NS+EM-ThM12 Ion-assisted Epitaxial Sputter-Deposition and Properties 

of Metastable Zr1−xAlxN(001) (0.05 x 0.25 ) Alloys, AR.B. MEI, B.M. HOWE, 

University of Illinois at Urbana Champaign, N. GHAFOOR, E. BROITMAN, Linköping 

University, Sweden, M. SARDELA, University of Illinois at Urbana Champaign, L. HULTMAN, 

Linköping University, Sweden, A. ROCKETT, J.E. GREENE, I. PETROV, University of Illinois 

at Urbana Champaign, M. ODEN, H. FAGER, Linköping University, Sweden 

12:00 pm 

163


Room: West Hall - Session EW-ThL 



12:00 pm EW-ThL1 EW Multi Vendor Presentation: Kratos/PHI/Thermo/Omicron 

12:20 pm 

12:40 pm 

1:00 pm 

1:20 pm 

1:40 pm 

Thursday Lunch, November 1, 2012 

164

NOTES 

165


Room: 20 - Session AS-ThA 

Applications of Large Cluster Ion Beams - Part 2 (2:00-3:20 pm)/ 

Surface Analysis using Synchrotron Techniques (3:40-5:40 pm) 

Moderators: A.V. Walker, University of Texas at Dallas, C.M. Mahoney, 

Pacific Northwest National Laboratory, M.L. Pacholski, The Dow 

Chemical Company, A. Herrera-Gomez, UAM-Azcapotzalco and 


2:00 pm AS-ThA1 Applications of a C60 Ion Source for Surface Chemical Analysis: 

It’s Not Just for Polymers, W.F. STICKLE, M.D. JOHNSON, D. BILICH, HP 

2:20 pm AS-ThA2 Towards Ultimate Organic Depth Profiling using Argon Cluster 

Beams – Recommendations for Dual Beam Profiling and Sample 

Charge Compensation, R. HAVELUND, A.G. SHARD, M.P. SEAH, I.S. GILMORE, 

National Physical Laboratory, UK 

2:40 pm AS-ThA3 Comparative Study of C60 and Gas Cluster Ion Sputtering in 

XPS Depth Profiling for Thin Film Analysis, S.S. ALNABULSI, J.F. MOULDER, 

S.N. RAMAN, S.R. BRYAN, J.S. HAMMOND, Physical Electronics 

3:00 pm AS-ThA4 Damage Profiles of Si (001) Surfaces Bombarded by Ar Gas 

Cluster Ion Beam, J.G. CHUNG, D.J. YUN, Y.K. KYOUNG, H.I. LEE, J.C. LEE, 

Samsung Advanced Institute of Technology, Republic of Korea, H.J. KANG, Chungbuk 

National University (CBNU), Republic of Korea 


3:40 pm AS-ThA6 Non-Destructive Depth Profiling using VKE-XPS and Maximum 

Entropy Regularization, C. WEILAND, J.C. WOICIK, National Institute of Standards 


4:00 pm AS-ThA7 The Early Stage of Corrosion of Cu3Au Alloy, P. RAJPUT, ESRF, 

France, A. GUPTA, UGC-DAE Consortium for Scientific Research, India, C. MENEGHINI, 

Universita di“Roma Tre”, Italy, G. SHARMA, UGC-DAE Consortium for Scientific Research, 

India, J. ZEGENHAGEN, ESRF, France 

4:20 pm AS-ThA8 Invited 

Hard X-ray Photoelectron Spectroscopy (HAXPES) Investigations of 

Electronic Materials and Interfaces, J.C. WOICIK, National Institute of Standards 



Room: 9 - Session EM+MI-ThA 

Semiconductor Heterostructures II + Heusler Alloys 

Moderators: J.E. Ayers, University of Connecticut, 

B.D. Schultz, University of California, Santa Barbara 

EM+MI-ThA1 Dislocation Compensation in Ungraded ZnSySe1-y/GaAs 

(001) Heterostructures, T.M. KUJOFSA, J.E. AYERS, University of Connecticut 

EM+MI-ThA2 Dynamical X-ray Diffraction from Semiconductor 

Heterostructures with Asymmetrical Dislocation Densities, P.B. RAGO, J.E. 

AYERS, University of Connecticut 

EM+MI-ThA3 Invited 

Engineered Substrates and Lattice Mismatched Semiconductor Devices, 

E. FITZGERALD, Massachusetts Institute of Technology 



5:00 pm AS-ThA10 Hard X-ray Photoemission Spectroscopy used to Investigate 

the Resistive Switching Behavior of Manganite Heterostructures: The 

Case of Ti/PrCaTiO3 Interface, F. OFFI, CNISM and Dipartimento di Fisica, 

Università Roma Tre, Italy, F. BORGATTI, CNR-ISMN, Bologna, Italy, Y. YAMASHITA, A. 

YANG, M. KOBATA, K. KOBAYASHI, Synchrotron X-ray Station at SPring-8, NIMS, Japan, 

C. PARK, A. HERPERS, R. DITTMANN, Peter Grünberg Institut, Research Center Jülich, 


Epitaxial Growth and Electronic Bandstructure of the Semiconducting 

Half Heusler Compound CoTiSb, J. KAWASAKI, University of California Santa 

Barbara, L. JOHANSSON, M. HJORT, R. TIMM, Lund University, Sweden, B. SHOJAEI, 

University of California Santa Barbara, A. MIKKELSEN, Lund University, Sweden, B.D. 

SCHULTZ, C. PALMSTROM, University of California Santa Barbara 



Application of Magnetic Heusler Alloys to All-Metal Sensors for 

Ultrahigh-Density Magnetic Recording, J.R. CHILDRESS, HGST San Jose 

Research Center 

EM+MI-ThA10 Growth of Epitaxial Co2MnSi/MgO/Co2MnSi Magnetic 

Tunnel Junctions by Molecular Beam Epitaxy, S. PATEL, A. KOZHANOV, B.D. 

SCHULTZ, C. PALMSTRØM, University of California, Santa Barbara 

5:20 pm 

Germany, G. PANACCIONE, CNR-IOM, Basovizza-Trieste, Italy 

EM+MI-ThA11 Fabrication of Highly Ordered Co2FeAl Thin Films by 

Reactive Ion Beam Deposition for Spintronic Devices, Y.S. CUI, University of 

Virginia, S. SCHÄFER, T. MEWES, University of Alabama, M. OSOFSKY, Naval Research 

Laboratory, J.W. LU, S.A. WOLF, University of Virginia 

5:40 pm 

Thursday Afternoon, November 1, 2012 

166



Room: 14 - Session EM+TF+AS-ThA 

Growth and Characterization of Group III-Nitride Materials 

Moderator: N. Dietz, Georgia State University 

2:00 pm EM+TF+AS-ThA1 Invited 

AlN-based Technology for Deep UV and High-power Applications, Z. 

SITAR, HexaTech, Inc. & North Carolina State University, B. MOODY, S. CRAFT, R. 

SCHLESSER, R. DALMAU, J. XIE, S. MITA, HexaTech, Inc., T. RICE, J. TWEEDY, J. 

LEBEAU, L. HUSSEY, R. COLLAZO, B. GADDY, D. IRVING, North Carolina State University 


2:40 pm EM+TF+AS-ThA3 Atomic Layer Deposition of AlN Thin Films as Gate 

Dielectrics for Wide Bandgap Semiconductors, Y.-C. PERNG, J.P. CHANG, D. 

CHIEN, University of California at Los Angeles 

3:00 pm EM+TF+AS-ThA4 Low-Temperature Behavior of the Surface Photovoltage 

in p-type GaN, J.D. MCNAMARA, M. FOUSSEKIS, A.A. BASKI, M.A. RESHCHIKOV, 

Virginia Commonwealth University 


3:40 pm EM+TF+AS-ThA6 Controlling GaN Polarity on GaN Substrates, J.K. HITE, M.E. 

TWIGG, J.A. FREITAS, JR., M.A. MASTRO, J.R. MEYER, I. VURGAFTMAN, S. 

O'CONNOR, N.J. CONDON, F.J. KUB, S.R. BOWMAN, C.R. EDDY, JR., U.S. Naval 


4:00 pm EM+TF+AS-ThA7 Invited 

Direct Green and Yellow Light Emitting Diodes – Polarization Control 

and Epitaxy, C. WETZEL, T. DETCHPROHM, Rensselaer Polytechnic Institute 


Room: 15 - Session EN+AS-ThA 

Characterization of Energy Materials and Systems 

Moderator: L. Lohstreter, Medtronic, Inc. 

EN+AS-ThA1 Invited 

Growth Temperature and Stoichiometry Effects on the Inherent Stability 

of CdS/CdTe Solar Cells, D.S. ALBIN, T.A. GESSERT, R. DHERE, S.-H. WEI, J. MA, 

D. KUCIAUSKAS, A. KANEVCE, R. NOUFI, National Renewable Energy Laboratory 

EN+AS-ThA3 Hybrid Configurations of Nanostructured Electrical Energy 

Storage for High Power-Energy Performance, L.C. HASPERT, S.B. LEE, G.W. 

RUBLOFF, University of Maryland 

EN+AS-ThA4 XPS Characterization of Organic Gradients in Organic 

Photovoltaic and Organic Light Emitting Devices Using Ar GCIB Depth 

Profiling, S.N. RAMAN, J.S. HAMMOND, J.F. MOULDER, Physical Electronics 

EN+AS-ThA6 Characterization of Degradation Mechanisms of Membrane 

Electrode Assemblies by XPS and SEM Imaging, A. PATEL, K. 

ARTYUSHKOVA, P. ATANASSOV, University of New Mexico, S. WESSEL, V. COLBOW, M. 

DUTTA, Ballard Power Systems, Canada 

EN+AS-ThA7 Selective Adsorption Behavior of CO2 and C2 Hydrocarbon 

Isomers over N2 and Methane in a Flexible Metal Organic Frameworks, 

N. NIJEM, P. THISSEN, University of Texas at Dallas, P. CANEPA, Wake Forest University, 

H. WU, J. LI, Rutgers University, T. THONHAUSER, Wake Forest University, Y.J. CHABAL, 


4:20 pm Invited talk continued. EN+AS-ThA8 Fabrication and Characterization of a PCBM-Terminated 

Organic Monolayer on a Si(111) Surface, T.J. MILLER, A.V. TEPLYAKOV, 

University of Delaware 

4:40 pm EM+TF+AS-ThA9 The Influence of Substrate and Gas Phase Temperatures 

on the Properties of InN Epilayers, M.K.I. SENEVIRATHNA, S.D. GAMAGE, R. 

ATALAY, R.L. SAMARAWEERA, A.G.U. PERERA, Georgia State University, B. 

KUCUKGOK, A.G. MELTON, I. FERGUSON, University of North Carolina at Charlotte, N. 

DIETZ, Georgia State University 

5:00 pm EM+TF+AS-ThA10 Absence of Electron Accumulation at InN(11-20) 

Cleavage Surfaces, H. EISELE, Technische Universität Berlin, Germany, S. 

SCHAAFHAUSEN, Forschungszentrum Jülich, Germany, A. LENZ, Technische Universität 

Berlin, Germany, A. SABITOVA, Forschungszentrum Jülich, Germany, L. IVANOVA, M. 

DÄHNE, Technische Universität Berlin, Germany, Y.-L. HONG, S. GWO, National Tsing-Hua 

University, Taiwan, P. EBERT, Forschungszentrum Jülich, Germany 

5:20 pm EM+TF+AS-ThA11 Dependence of Gallium Incorporation and Structural 

Properties of Indium-rich InxGa1-xN Epilayers on Ammonia - MO 

Precursor Pulse Separation, S.D. GAMAGE, R. ATALAY, M.K.I. SENEVIRATHNA, 

R.L. SAMARAWEERA, Georgia State University, A.G. MELTON, I. FERGUSON, University 

of North Carolina at Charlotte, N. DIETZ, Georgia State University 

5:40 pm EM+TF+AS-ThA12 MBE-Growth of Coherent-Structure InN/GaN Short- 

Period Superlattices as Ordered InGaN Ternary Alloys for III-N Solar 

Cell Application, A. YOSHIKAWA, K. KUSAKABE, N. HASHIMOTO, T. OKUDA, T. ITOI, 

Chiba University, Japan 

167 

EN+AS-ThA9 Conversion Reaction of Thin Film Metal Fluorides and Metal 

Oxides Exposed to Atomic Lithium, R. THORPE, S. RANGAN, R.A. BARTYNSKI, 

Rutgers University


Room: 7 - Session EN+NS-ThA 

Thermophotovoltaics, Thermoelectrics and Plasmonics 

Moderator: R.A. Quinlan, Naval Surface Warfare Center, Cardercock 

Division 

2:00 pm EN+NS-ThA1 Structuring of the Radiative Thermal Emission in Tungsten 

Inverse Opals for Thermophotovoltaic Applications, M.D. LOSEGO, North 

Carolina State University, K.A. ARPIN, University of Illinois at Urbana Champaign, B. 

KALANYAN, North Carolina State University, P.V. BRAUN, University of Illinois at Urbana 

Champaign, G.N. PARSONS, North Carolina State University 

2:20 pm EN+NS-ThA2 Long Wavelength Barrier Based Thermophotovoltaic Cells, 

D.F. DEMEO, C.M. SHEMELYA, T.E. VANDERVELDE, Tufts University 

2:40 pm EN+NS-ThA3 Invited 

Nanowires and Nanowire Heterostructures for Thermoelectric Energy 

Harvesting, Y. WU, Purdue University 


Room: 16 - Session ET+SS+GR+SP-ThA 

Electron Transport at the Nanoscale: Molecules and Defects 


J. Wendelken, Oak Ridge National Laboratory 

ET+SS+GR+SP-ThA1 Invited 

Molecule Substrate Interactions Probed by Scanning Tunneling 

Microscopy, H.-J. GAO, Chinese Academy of Sciences 


ET+SS+GR+SP-ThA3 Electron Localization in Single Mixed-Valence 

Molecules, R.C. QUARDOKUS, N.A. WASIO, Y. LU, S.A. KANDEL, University of Notre 

Dame 

3:00 pm Invited talk continued. ET+SS+GR+SP-ThA4 Rectification by a Single Molecular Diode, L. ADAMSKA, 

University of South Florida, M. KOZHUSHNER, Institute of Chemical Physics, Russian 

Academy of Sciences, I.I. OLEYNIK, University of South Florida 


3:40 pm EN+NS-ThA6 Plasmonic Polymer Solar Cells with Spectrally Tuned 

Au/SiO2 Core/Shell Nanorods incorporated in Active Layers, V. JANKOVIC, 

J.P. CHANG, UCLA 

4:00 pm EN+NS-ThA7 Optics and Photonics Research Priorities and Grand 

Challenges as Relating to Today's Energy Frontiers, E.B. SVEDBERG, The 

National Academies 


ET+SS+GR+SP-ThA6 Electron Transport Study of Graphene Grain 

Boundaries Using Scanning Tunneling Potentiometry, K. CLARK, X.-G. 

ZHANG, I. VLASSIOUK, A.-P. LI, Oak Ridge National Laboratory 

ET+SS+GR+SP-ThA7 Invited 

Static and Dynamic Conductance in Topological Defects in 

Ferroelectrics, S.V. KALININ, Oak Ridge National Laboratory 

4:40 pm ET+SS+GR+SP-ThA9 Transport and Mechanical Properties of Molecular 

Junctions formed by Acetophenon Deposited on Si (100) Surface, M. 

SETVIN, Z. MAJZIK, O. KREJCI, P. HAPALA, P. JELINEK, Institute of Physics of ASCR, 

Czech Republic 

5:00 pm ET+SS+GR+SP-ThA10 Experimental Determination of the Charge Neutrality 

Level (CNL) of Conjugated Polymers, W. WANG, R. SCHLAF, University of South 

Florida 

5:20 pm ET+SS+GR+SP-ThA11 Investigation on the Electronic Structure of Arylthio 

(ArS)-functionized CdSe Nanoparticle Hybrid Materials, Z. LI, University of 

South Florida, K. MAZZIO, University of Washington, S. GUTMANN, University of South 

Florida, C.K. LUSCOMBE, University of Washington, R. SCHLAF, University of South Florida 

5:40 pm 


168


Room: 13 - Session GR+EM+NS+SS+TF-ThA 

Beyond Graphene: BN and Other 2D Electronic Materials; 2D 


Moderator: I.I. Oleynik, University of South Florida 

2:00 pm GR+EM+NS+SS+TF-ThA1 X-ray Photoelectron Spectroscopy Investigation of 

the Valence and Conduction Band Offset at Hexagonal a-BN:H/Si 

Interfaces, S. KING, M. FRENCH, J. BIELEFELD, Intel Corporation, M. JAEHNIG, Intel 

Coroporation, M. KUHN, B. FRENCH, Intel Corporation 

2:20 pm GR+EM+NS+SS+TF-ThA2 Monolayer Graphene-Boron Nitride 2D 

Heterostructures, R. CORTES, J. LAHIRI, E. SUTTER, P.W. SUTTER, Brookhaven 


2:40 pm GR+EM+NS+SS+TF-ThA3 Invited 

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic 

Layers, J. LOU, S. NAJMAEI, Z. LIU, Y. ZHAN, P. AJAYAN, Rice University 

Biofilms and Biofouling: Marine Medical Energy Focus 

Topic 

Room: 23 - Session MB+BI-ThA 

Marine Biofouling 

Moderator: D.E. Barlow, Naval Research Laboratory 

MB+BI-ThA1 Invited 

The Role of Oxygen in Microbiologically Influenced Marine Corrosion, 

B.J. LITTLE, J.S. LEE, R.I. RAY, Naval Research Laboratory 


MB+BI-ThA3 3D-Tracking of Biofouling Microorganisms with Digital In-Line 

Holographic Microscopy, S.M. STUPPY, University of Heidelberg, Germany, A. 

ROSENHAHN, T. SCHWARTZ, Karlsruhe Institute of Technology, Germany, T. EDERTH, 

Linköping University, Sweden, J.A. CALLOW, M.E. CALLOW, University of Birmingham, UK, 

B. LIEDBERG, Linköping University, Sweden, G.W. SWAIN, Florida Institute of Technology, 

M.H. GRUNZE, Karlsruhe Institute of Technology, Germany 

3:00 pm Invited talk continued. MB+BI-ThA4 A Multidisciplinary Approach to Tackling Microbiologically 

Influenced Corrosion, S.A. WADE, P.R. STODDART, E. PALOMBO, M.M. HLAING, 

M.A. JAVED, D. MARIĆ, D. ELDRIDGE, S.L. MCARTHUR, Swinburne University of 

Technology, Australia 


3:40 pm GR+EM+NS+SS+TF-ThA6 Formation of Silicene and 2D Si Sheets on 

Ag(111): Growth Mode, Structural and Electronic Properties, P. VOGT, 

Technical University of Berlin, Germany, T. BRUHN, A. RESTA, B. EALET, CNRS CiNaM, 

Marseille, France, P. DE PADOVA, CNR-ISM, Rome, Italy, G. LE LAY, CNRS CiNaM, 

Marseille, France 

4:00 pm GR+EM+NS+SS+TF-ThA7 Yttria-monolayer on Pt(111) Supported Graphene: 

A Novel Two Dimensional Heterostructure and its Affect on Charge 

Doping of Graphene, R. ADDOU, A. DAHAL, M. BATZILL, University of South Florida 


Probing the BCN-triangle by Computations—Outside the Carbon Corner, 

YAKOBSON, Rice University 



Single-layer MoS2 Devices and Circuits, A. KIS, EPFL, Switzerland 


5:40 pm 


169 

MB+BI-ThA6 Bioinspired Surfaces with Dynamic Topography for Active 

Control of Biofouling, X.H. ZHAO, G.P. LOPEZ, D. RITTSCHOF, Duke University 

MB+BI-ThA7 Seasonal Study of Cathodic Current and Elucidation of 

Oxygen Reduction Enhancement Mechanism in Marine Biofilms, M.J. 

STROM, Naval Research Laboratory, S.C. DEXTER, University of Delaware 

MB+BI-ThA8 Invited 

Tailoring Anode and Cathode Biofilms for Higher Current Production in 

Bioelectrochemical Systems, J. REGAN, Penn State University


Room: 25 - Session PS-ThA 


Moderator: L. Chen, Tokyo Electron America 

2:00 pm PS-ThA1 Invited 

Study on Microwave ECR Plasma Source for 450-mm Wafer Etching, K. 

MAEDA, Hitachi, Ltd., Japan, H. TAMURA, S. OBAMA, M. IZAWA, Hitachi High- 

Technologies Corp., Japan, G. MIYA, Hitachi, Ltd., Japan 


2:40 pm PS-ThA3 A Grid Reactor with Low Ion Energy Bombardment for Large 

Area PECVD of Thin Film Silicon Solar Cells, M. CHESAUX, A.A. HOWLING, 

Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, U. KROLL, D. DOMINÉ, 

Oerlikon Solar-Lab SA, Switzerland, CH. HOLLENSTEIN, Ecole Polytechnique Fédérale de 

Lausanne (EPFL), Switzerland 

3:00 pm PS-ThA4 Plasma Generation and Delivery from a VHF Remote Source, D. 

CARTER, D. HOFFMAN, K. PETERSON, R. GRILLEY, Advanced Energy Industries Inc. 


3:40 pm PS-ThA6 Mechanical Optimization of a Plasma Source Device, S. POLAK, 

M. THORNTON, D. HOFFMAN, D. CARTER, Advanced Energy Industries Inc. 

4:00 pm PS-ThA7 Studying of the Transition Modes in a Single High Frequency 

and Double RF-CCP Discharge using OES, D. AKBAR, University of Wisconsin 

Madison, Y.M. SUNG, Kyungsung University, South Korea 

4:20 pm PS-ThA8 Impact of Reactor Design on Plasma Polymerization Processes 

- An International Round-Robin Study, J.D. WHITTLE, A. MICHELMORE, D.A. 

STEELE, R.D. SHORT, University of South Australia 

4:40 pm PS-ThA9 A Mini Plasma Source for In Situ Sample Cleaning, N.B. KOSTER, 

F.T. MOLKENBOER, R.J. BOLT, T.J. VERSLOOT, J.P.B. JANSSEN, TNO Technical 

Sciences, The Netherlands 

5:00 pm PS-ThA10 Magnetic Neutral Loop Discharge Reactor for Low-k Dielectric 

Plasma Processing, W.Y. LI, Z. LING, H.-Z. ZHANG, J.A. BRAY, T.M. GRIFFIN, M.T. 

NICHOLS, University of Wisconsin-Madison, B.N. MOON, Y.M. SUNG, Kyungsung 

University, Korea, S. BANNA, Applied Materials, Inc., Y. NISHI, Stanford University, J.L. 

SHOHET, University of Wisconsin-Madison 

5:20 pm PS-ThA11 High Efficiency ICP Source for Plasma Dry Clean Processing, 

V. NAGORNY, O. TODOR, V. SURLA, A. KADAVANICH, Mattson Technology, Inc. 

5:40 pm 



Room: 21 - Session SS+NS-ThA 

Surface Science of Nanostructures 

Moderator: J.M. Millunchick, University of Michigan 

SS+NS-ThA1 Invited 

Direct Atomic Scale Imaging and Spectroscopy of III-V Semiconductor 

Nanowire Surfaces, A. MIKKELSEN, Lund University, Sweden 

170 

SS+NS-ThA3 Spontaneous Assembly of Ordered Atomic Wires with a 

Long Interwire Distance on a Stepped Nanotemplate, B.G. SHIN, M.K. KIM, 

D.-H. OH, C.-Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea 

SS+NS-ThA4 Influence of Surface Steps on the Initial Oxidation of TiN 

(100), M. HONG, S.R. PHILLPOT, S.B. SINNOTT, University of Florida 

SS+NS-ThA6 Growth of Ag/Ge(111) Phases Studied with LEEM and 

LEED, S. CHIANG, C. MULLET, UC Davis 

SS+NS-ThA7 A Synchrotron XPS Study of the Radio-Frequency SF6 

Plasma Fluorination of Single-Walled Carbon Nanotubes, A.J. BARLOW, 

NEXUS XPS Facility, Newcastle University UK, A.J. BLANCH, A.D. SLATTERY, J.S. 

QUINTON, Flinders University, Australia 

SS+NS-ThA8 Solving the Shape of Micellar Pt Nanoparticles Supported on 

TiO2(110) and γ-Al2O3: A STM, TEM and EXAFS Study, F. BEHAFARID, B. 

ROLDAN CUENYA, University of Central Florida 

SS+NS-ThA9 Geometrical, Electronic, and Vibrational Properties of Bare 

and H-covered Ptn(n=22, 33, 44, 55, and 85) Nanoparticles, G. SHAIFAI, S. 

HONG, M. ALCANTARA, T.S. RAHMAN, University of Central Florida 

SS+NS-ThA10 The Effect of S to Se Substitution in SAMs: Odd-Even 

Polymorphism of Biphenyl-Substituted Alkaneselenolate on Au(111), M. 

DENDZIK, Jagiellonian University, Poland, A. TERFORT, Goethe University, Germany, P. 

CYGANIK, Jagiellonian University, Poland 

SS+NS-ThA11 Molecular Self-Assembly by Ionic Bonding in a Series of 

Carboxylate Species on the Cu(100) Surface, D. SKOMSKI, S.L. TAIT, Indiana 

University - Bloomington


Room: 22 - Session SS-ThA 

Liquid/Surface Interactions 

Moderator: G.A. Kimmel, Pacific Northwest National Laboratory 

2:00 pm SS-ThA1 Interface Properties of Aqueous Nitrile Solutions, K.A. PERRINE, A. 

MARGARELLA, M.H.C. VAN SPYK, University of California Irvine, B. WINTER, Helmholtz- 

Zentrum Berlin für Materialien und Energie, Germany, H. BLUHM, Lawrence Berkeley 

National Laboratory, J.C. HEMMINGER, University of California Irvine 

2:20 pm SS-ThA2 Photoelectron Spectroscopy of Sulfuric Acid Aqueous Solutions, 

A. MARGARELLA, K.A. PERRINE, University of California Irvine, T. LEWIS, Lawrence 

Livermore National Laboratory, M. FAUBEL, Max-Planck-Institut für Dynamik und 

Selbstorganisation, Germany, B. WINTER, Helmholtz-Zentrum Berlin für Materialien und 

Energie and BESSY, Germany, J.C. HEMMINGER, University of California Irvine 

2:40 pm SS-ThA3 Invited 

Using Nanoscale Amorphous Solid Water Films to Create and Study 

Deeply Supercooled Liquid Water, S.R. SMITH, B.D. KAY, Pacific Northwest 


Thin Film 

Room: 11 - Session TF+AS+SS-ThA 

Thin Films: Growth and Characterization-III 

Moderator: M.R. Davidson, University of Florida 

TF+AS+SS-ThA1 Atomic Force Microscopy (AFM)-Based Nanografting for 

the Study of Self-Assembled Monolayer Formation of Organophosphonic 

Acids on Al2O3 Single Crystal Surfaces, B. TORUN, B. OEZKAYA, G. 

GRUNDMEIER, University of Paderborn, Germany 

TF+AS+SS-ThA2 SIMS as a Method for Probing Stability of the Molecule- 

Substrate Interface in SAMs, J. OSSOWSKI, J. RYSZ, Jagiellonian University, 

Poland, A. TERFORT, Goethe University, Germany, P. CYGANIK, Jagiellonian University, 

Poland 

TF+AS+SS-ThA3 Wet Chemical Surface Modification of Silicon Oxide and 

Oxide Free Silicon by Aluminum Oxide, P. THISSEN, A. VEGA, T. PEIXOTO, Y.J. 


3:00 pm Invited talk continued. TF+AS+SS-ThA4 Static and Dynamic Depth Profiling of Thin Films with 

Low Energy Ion Scattering (LEIS), H.R.J. TER VEEN, M. FARTMANN, Tascon 

GmbH, Germany, T. GREHL, ION-TOF GmbH, Germany, B. HAGENHOFF, Tascon GmbH, 

Germany 


3:40 pm SS-ThA6 DFT Study of Water Dissociation and Diffusion on Metal 

Surfaces, Kinks and Step, L. ARNADOTTIR, Oregon State University 

4:00 pm SS-ThA7 Structures and Reactions of Water on Cu(110) Studied by STM 

and Noncontact AFM, Y. SHI, Lawrence Berkeley National Laboratory, P. CABRERA- 

SANFELIX, Donostia International Physics Center, Spain, B.Y. CHOI, Lawrence Berkeley 

National Laboratory, A. ARNAU, D. SÁNCHEZ-PORTAL, Centro de Física de Materiales, 

Spain, R. PÉREZ, Universidad Autónoma de Madrid, Spain, M. SALMERON, Lawrence 

Berkeley National Laboratory 

4:20 pm SS-ThA8 Adsorption and One-Dimensional Chain Formation of Water on 

TiO2(110), J. LEE, D.C. SORESCU, X. DENG, National Energy Technology Laboratory, 

K.D. JORDAN, University of Pittsburgh 

4:40 pm SS-ThA9 Characterization of Surface and Adsorbate Chemistry on TiO2; 

Particle Ensembles and Atmospherically Prepared TiO2; Single 

Crystalline Surfaces, C. KUNZE, B. TORUN, G. GRUNDMEIER, University of 

Paderborn, Germany 

5:00 pm SS-ThA10 The Critical Marangoni Number Dependence with Different 

Aspect Ratio Comparing Microgravity Experiments and Numerical 

Simulation, S. YODA, ISAS, Japan, S. MATSUMOTO, IASA, Japan, H. KAWASAKI, I. 

UENO, Tokyo University of Science, Japan 

TF+AS+SS-ThA6 Invited 

Paul Holloway Award Talk: Surface Chemistry and Structure of Alloy 

Thin Films under Reaction Conditions and their Correlations to Catalytic 

Performances of CO2 Conversion and Methane Partial Oxidation, F. TAO*, 

University of Notre Dame 


TF+AS+SS-ThA8 Time-resolved and Surface Plasmon Resonance Studies 

in Metal-Insulator Phase Transition in VO2 Thin Films, L. WANG, C. 

CLAVERO, K. YANG, E. RADUE, M.T. SIMONS, I. NOVIKOVA, R.A. LUKASZEW, College 

of William and Mary 

TF+AS+SS-ThA9 Growth, Microstructure and Optical Properties of Sputter- 

Deposited Gallium Oxide Thin Films, S.K. SAMALA, C.V. RAMANA, The 

University of Texas at El Paso 

TF+AS+SS-ThA10 Optical and Structural Properties of Hafnium Oxide Thin 

Films Prepared Using Different Deposition Techniques, L. SUN, N.R. 

MURPHY, J.T. GRANT, J.G. JONES, R. JAKUBIAK, Air Force Research Laboratory 

5:20 pm TF+AS+SS-ThA11 Nitrogen Induced Changes in the Structure and 

Electronic Properties of WO3 Thin Films, C.V. RAMANA, R.S. VEMURI, The 

University of Texas at El Paso, M. ENGELHARD, S. THEVUTHASAN, Pacific Northwest 


5:40 pm 

* Paul Holloway Award Winner 


171

Thin Film 

Room: 10 - Session TF+EM+SS-ThA 

Applications of Self-Assembled Monolayers and Layer-by- 

Layer Assemblies 

Moderator: M.R. Linford, Brigham Young University 

2:00 pm TF+EM+SS-ThA1 Invited 

Light-Directed Nanosynthesis: Near-Field Optical Approaches to 

Integration of the Top-Down and Bottom-Up Fabrication Paradigms, G.J. 

LEGGETT, University of Sheffield, UK 


2:40 pm TF+EM+SS-ThA3 Molecular Layer Deposition (MLD) of Polymer Multiple 

Quantum Dots on TiO2, T. YOSHIMURA, S. ISHII, Tokyo University of Technology, 

Japan 

3:00 pm TF+EM+SS-ThA4 Thiol-yne Click Chemistry: Old Concept & New 

Applications in Surface Science, N.S. BHAIRAMADGI, H. ZUILHOF, Wageningen 

University, Netherlands 

3:20 pm BREAK 

3:40 pm TF+EM+SS-ThA6 Attachment of Conjugated Diruthenium Alkynyl 

Compounds by Click Chemistry, S. POOKPANRATANA, National Institute of 

Standards and Technology, S.P. CUMMINGS, T. REN, Purdue University, C.A. RICHTER, 

C.A. HACKER, National Institute of Standards and Technology 

4:00 pm TF+EM+SS-ThA7 Vapor Phase Surface Functionalization using Hybrid 

SAMs / ALD Heterostructures, L. LECORDIER, M.J. DALBERTH, G. SUNDARAM, 

J.S. BECKER, Cambridge Nanotech, Inc. 

4:20 pm TF+EM+SS-ThA8 Chemically and Mechanically Stable Hydrophobic Thin 

Films Prepared by Combination of Layer-By-Layer Approach and 

Thiolene Chemistry, N. MADAAN, J.A. TUSCANO, N.R. ROMRIELL, M.R. LINFORD, 

Brigham Young University 

4:40 pm TF+EM+SS-ThA9 A Detailed Investigation of the Conditions for Monolayer 

Deposition from Silane Precursors, J. KNAUF, Advanced Molecular Films GmbH / 

RWTH Aachen University, Germany, L. REDDEMANN, Advanced Molecular Films GmbH / 

Universität zu Köln, Germany, A. BÖKER, RWTH Aachen University, Germany, K. REIHS, 

Advanced Molecular Films GmbH, Germany 

5:00 pm TF+EM+SS-ThA10 Self Limiting Behavior in the Directed Self-Assembly of 

Mounds on Patterned GaAs(001), C.-F. LIN, University of Maryland, C.J.K. 

RICHARDSON, Laboratory for Physical Science, H.-C. KAN, University of Maryland, N.C. 

BARTELT, Sandia National Laboratories, R.J. PHANEUF, University of Maryland 

5:20 pm TF+EM+SS-ThA11 Characterization of Fully Functional Spray-on Antibody 

Thin Film, J.J. FIGUEROA, S. MAGANA, D. LIM, R. SCHLAF, University of South Florida 

5:40 pm 


172

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173

NOTES 

174

Thursday Afternoon Poster Sessions 


Room: Central Hall - Session EM-ThP 

Electronic Materials and Processing Poster Session 

6:00 pm 

EM-ThP1 Proton Irradiation of Lattice Matched InAlN/GaN High Electron 

Mobility Transistors, C.-F. LO, L. LIU, T.S. KANG, F. REN, University of Florida, C. 

SCHWARTZ, E. FLITSIYAN, L. CHERNYAK, University of Central Florida, H.-Y. KIM, J. KIM, Korea 

University, Republic of Korea, O. LABOUTIN, Y. CAO, J.W. JOHNSON, Kopin Corporation, P. 

FRENZER, S.J. PEARTON, University of Florida 

EM-ThP2 Effects of 2MeV Ge + Irradiation on AlGaN/GaN HEMTs, E.A. DOUGLAS, 

P. FRENZER, S.J. PEARTON, C.-F. LO, L. LIU, T.S. KANG, F. REN, University of Florida, E. 

BIELEJEC, Sandia National Laboratories 

EM-ThP3 Influence of AlInN Buffer Layer Thickness on the Properties of GaN 

Films on Si(111) Substrate using RF Metal-Organic Molecular Beam Epitaxy, 

W.C. CHEN, C.T. LEE, C.-N. HSIAO, Instrument Technology Research Center, National Applied 

Research Laboratories, Taiwan 

EM-ThP4 Morpholigical Study of GaN Films Grown Under ALD Process 

Conditions as Well as Both Over- and Under- Saturated Growth Conditions, 

J.C. REVELLI, T.J. ANDERSON, University of Florida 

EM-ThP5 Structural, Compositional, and Thermal Stability Studies on In1-xGaxN 

Epilayers, A. ACHARYA, Georgia State University, M. BUEGLER, Technical University of Berlin, 

Germany, S.D. GAMAGE, N. DIETZ, B. THOMS, Georgia State University 

EM-ThP6 The Influence of the Group V/III Molar Precursor Ratio on the 

Structural and Optoelectrical Properties of InN Epilayers Grown by High- 

Pressure CVD, R. ATALAY, Georgia State University, M. BUEGLER, Technische Universität 

Berlin, Germany, S.D. GAMAGE, M.K.I. SENEVIRATHNA, Georgia State University, G. DURKAYA, 

University of California Irvine, L. SU, UNC Charlotte, A.G.U. PERERA, Georgia State University, I. 

FERGUSON, UNC Charlotte, N. DIETZ, Georgia State University 

EM-ThP7 Protoype of Junctionless Transistor on SOI Wafers using Focused 

Ion Beam Milling, L. PETERSEN BARBOSA LIMA, J. ALEXANDRE DINIZ, I. DOI, J. GODOY 

FILHO, State University of Campinas, Brazil, H. IVANOV BOUDINOV, University of Rio Grande Do 

Sul, Brazil 

EM-ThP8 Simulation of Millisecond Laser Anneal on SOI: A Study of Dopant 

Activation and Mobility and its Application to Scaled FinFET Thermal 

Processing, T. MICHALAK, J. HERMAN, M. RODGERS, D. FRANÇA, C. BORST, University at 

Albany-SUNY 

EM-ThP9 Equivalent-Circuit Model for Vacuum Ultraviolet Irradiation of 

Dielectric Films, H. SINHA, J.L. SHOHET, University of Wisconsin-Madison 

EM-ThP10 Surface Photoconductivity of SiO2 and SiCOH Induced by Vacuum 

Ultraviolet Radiation, H. ZHENG, M.T. NICHOLS, D. PEI, University of Wisconsin-Madison, 

G.A. ANTONELLI, Novellus Systems, Inc., Y. NISHI, Stanford University, J.L. SHOHET, University 

of Wisconsin-Madison 

EM-ThP11 Spatial Volume Charge Distribution Measurement in Thin Dielectric 

Films: Electro-Acoustic Method, D. PEI, M.T. NICHOLS, University of Wisconsin-Madison, 

Y. SHKEL, Commet LLC, Y. NISHI, Stanford University, J.L. SHOHET, University of Wisconsin- 

Madison 

EM-ThP12 Investigation of Photoluminescent Characteristics and Structural 

Properties of Thin Film Zinc Silicate Doped with Manganese, K.H. YOON, J.H. 

KIM, Chungbuk National University (CBNU), Republic of Korea 

EM-ThP13 The Electrical and Thermal Properties of Nanoscale Multilayered 

Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te3-xSexThin Films, M. HINES, Z. XIAO, Alabama A&M 

University 

EM-ThP14 Mapping the Magnetic Detection Properties of Chip-Scale Optically 

Pumped Magnetometers, N. PTSCHELINZEW, P.H. HOLLOWAY, M.R. DAVIDSON, 


EM-ThP15 Characterization of ZnO/CuO Nanolaminate Materials, S.T. KING, L. 

BILKE, B. OLESON, J. KRUEGER, E. TENNYSON, University of Wisconsin - La Crosse 

EM-ThP16 Small-Molecule Scaffolds for Directed Self-Assembly, P.L. MANCHENO- 

POSSO, A.J. MUSCAT, University of Arizona 


Room: Central Hall - Session EN-ThP 

Energy Frontiers Poster Session 

6:00 pm 

EN-ThP1 Tungsten Carbide: Synthesis and Reactivity with Oxygen on the 

Nanoscale, J.B. MCCLIMON, P. REINKE, University of Virginia 

EN-ThP2 F-doped ZnO Thin Films Deposited by Pulse DC Magnetron 

Sputtering of Zinc Target, B.-H. LIAO, Instrument Technology Research Center, Taiwan, 


EN-ThP3 Photoresponse of PbS Nanoparticle - Quaterthiophene Films 

Prepared by Gaseous Deposition as Probed by XPS, M. MAJESKI, D. PLETICHA, I. 

BOLOTIN, L. HANLEY, University of Illinois at Chicago, E. YILMAZ, S. SUZER, Bilkent University, 

Turkey 

EN-ThP4 The Investigation of the Shunt Resistance using Conductive AFM and 

EL Measurements in Si Based Thin Film Solar Cells, M.H. JOO, J.M. LEE, K.H. 

PARK, LG Electronics Advanced Research Institute, Republic of Korea 

EN-ThP5 Growth Methods and Applications of SiC Nanopowder and 

Nanowhiskers, R. DHIMAN, University of Southern Denmark, E. JOHNSON, University of 

Copenhagen, Denmark, P.K. KRISTENSEN, Aalborg University, Denmark, P. MORGEN, University 

of Southern Denmark 

EN-ThP6 Epitaxial Growth of ZnInON Films for Piezo-Electric-Field Effect MQW 

Solar Cells, K. MATSUSHIMA, Kyushu University, Japan 

EN-ThP7 Texture-Etched Surface Structure Control of Transparent Conductive 

Impurity-Doped ZnO Films Deposited by r.f. Power Superimposed d.c. 

Magnetron Sputtering, T. MINAMI, T. FUJITA, T. MIYATA, J. NOMOTO, Kanazawa Institute 

of Technology, Japan 

EN-ThP8 Thermoelectric Properties of SbI3 Doped Bi2Te3+Bi2Se3 Alloys by 

Mechanical Alloying and Spark Plasma Sintering, M. BABU, S.J. HONG, Kongju 

National University, Republic of Korea 

EN-ThP9 Structure-to-Function Relationship in Porous Pt/TiO2/Ti Planar 

Nanostructures with a Potential Barrier for Chemicurrent Related Applications, 

S. DASARI, M. ARIYAN, M. HASHEMIAN, E. KARPOV, University of Illinois at Chicago 

EN-ThP10 Investigation of the Molecular Interaction between CdSe Quantum 

Dots and P3HT for Hybrid Solar Cell Applications, A.S. KARAKOTI, P. 

NACHIMUTHU, S. THEVUTHASAN, Pacific Northwest National Laboratory 

EN-ThP11 Low-Damage Deposition of Thin Silicon Films for Solar Panel 

Production using Surface-Wave Plasma Source, J. PECK, University of Illinois at 

Urbana Champaign, P. ZONOOZ, Starfire Industries LLC and University of Illinois at Urbana 

Champaign, D. CURRELI, University of Illinois at Urbana Champaign, M. REILLY, R. STUBBERS, 

B. JURCZYK, Starfire Industries, LLC, D.N. RUZIC, University of Illinois at Urbana Champaign 

EN-ThP12 Relationship Between Interface Microstructures and Obtainable 

Photovoltaic Properties in ZnO/Cu2O Heterojunction Solar Cells, Y. NISHI, S. 

ABE, T. MIYATA, T. MINAMI, N. IKENAGA, O. UEDA, Kanazawa Institute of Technology, Japan 

EN-ThP13 Sensory Characteristics of Zig-Zag (6,0) BN and SiC Nanotubes: Ab- 

Initio Calculation, S. OZKIRAC, B. KUTLU, S. ALIALY, M. INCEBACAK, Gazi University, 

Turkey 

175



Room: Central Hall - Session ET-ThP 

Electron Transport at the Nanoscale Poster Session 

6:00 pm 

ET-ThP1 The Performance of Organic Light-Emitting Diodes with Rb2CO3doped 

Alq3Layer for Improving Carrier-Injecting Probability, J.W. PARK, J.T. LIM, 

J.S. OH, G.Y. YEOM, Sungkyunkwan University, Republic of Korea 


Room: Central Hall - Session GR-ThP 

Graphene and Related Materials Poster Session 

6:00 pm 

GR-ThP1 Using Raman Spectroscopy and X-ray Photoelectron Spectroscopy 

to Guide the Development of Graphene-Based Materials, T.S. NUNNEY, M.H. 

WALL, Thermo Fisher Scientific, UK 

GR-ThP2 Ionic Strength Effects on Graphene Oxide Nanosheets and 

Flurescence Quenching of ssDNA Aptamers, M.Y. LIN, Y.P. LU, National Applied 

Research Laboratories, Taiwan, Republic of China 

GR-ThP3 Isotope Effect in the Graphene Deuteration Kinetics, A. NEFEDOV, 

Karlsruhe Institute of Technology, Germany, A. PARIS, Interdisciplinary Laboratory for 

Computational Science, FBK-CMM, Italy, N. VERBITSKY, Moscow State University, Russia, Y. 

WANG, Nagoya University, Japan, A. FEDOROV, D. HABERER, IFW Dresden, Germany, M. 

OEHZELT, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany, L. PETACCIA, Elletra 

Synchrotron Light Laboratory, Italy, D. USACHOV, St. Petersburg State University, Russia, D. 

VYALIKH, Technical University Dresden, Germany, H. SACHDEV, Max-Planck-Institute for Polymer 

Research, Germany, CH. WÖLL, Karlsruhe Institute of Technology, Germany, M. KNUPFER, B. 

BUECHNER, IFW Dresden, Germany, L. CALLIARI, Interdisciplinary Laboratory for Computational 

Science, FBK-CMM, Italy, L. YASHINA, Moscow State University, Russia, S. IRLE, Nagoya 

University, Japan, A. GRUENEIS, University of Vienna, Austria 

GR-ThP4 Graphene Nanoribbons Electronic Structure Modulations, N.B. LE, L.M. 

WOODS, University of South Florida 

GR-ThP5 Effects of an Interfacial Water Layer on Protein Adsorption to 

Graphene Sheets on Solid Substrates, K. YAMAZAKI, T. OGINO, Yokohama National 


GR-ThP6 Layer Dependent Growth of Pentacene on Epitaxial Graphene, W. 

JUNG, D.-H. OH, J. LEE, B.G. SHIN, C.-Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of 

Korea 

GR-ThP7 Optical Properties and Surface Radicals Content of Graphene 

Decorated with Metal Nanoparticles, M.A. BRATESCU, T. UENO, O. TAKAI, N. SAITO, 

Nagoya University, Japan 

GR-ThP8 Electronic Structure of MoS2 Monolayers on Copper, Q. MA, D.Z. SUN, 

W.H. LU, University of California Riverside, D. LE, M. AMANPOUR, University of Central Florida, J. 

MANN, S. BOBEK, University of California Riverside, T. RAMAN, University of Central Florida, L. 

BARTELS, University of California Riverside 

GR-ThP9 Dry Transfer of Graphene to Organic and Inorganic Substrates, E.H. 

LOCK, S. HERNANDEZ, S.G. WALTON, M. LASKOSKI, S.P. MULVANEY, P.E. SHEEHAN, W.K. 

LEE, T.J. ANDERSON, F.J. BEZAREZ, V.D. WHEELER, F.J. KUB, J.D. CALDWELL, K.D. 

HOBART, B.N. FEYGELSON, L.O. NYAKITI, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, 

Naval Research Laboratory 

GR-ThP10 Controllable Assembly of Aromatic Molecules on a Surface via Diels- 

Alder Reaction: A Carbon Source for Graphene, C.L. HENDERSON, J. BALTAZAR, H. 

SOJOUDI, J. KOWALIK, S. GRAHAM, L. TOLBERT, Georgia Institute of Technology 

GR-ThP11 Unique Electronic Mixing between Iron Phthalocyanine and 

Graphene*, D.B. DOUGHERTY, A.A. SANDIN, North Carolina State University, A. CALZOLARI, 

CNR-NANO, Istituto Nanoscienze, Italy, M. BUONGIORNO-NARDELLI, North Carolina State 

University, A. AL-MAHBOOB, J.T. SADOWSKI, Brookhaven National Laboratory, J.E. ROWE, North 


GR-ThP12 Half-Metallicity in Transition Metal Embedded Two Dimensional 

Graphyne, L.D. PAN, S.X. DU, Chinese Academy of Sciences, China, W.A. HOFER, University of 

Liverpool, UK, H.-J. GAO, Chinese Academy of Sciences, China 

176



Room: Central Hall - Session HI-ThP 

Aspects of Helium Ion Microscopy Poster Session 

6:00 pm 

HI-ThP1 Fabrication of Carbon Nanomembranes by Helium Ion Lithography, X. 

ZHANG, H. VIEKER, A. BEYER, A. GÖLZHÄUSER, University of Bielefeld, Germany 

HI-ThP2 Site Specific He Ion Irradiation Damage Studies in Nanolayerd Thin 

Films, V. SHUTTHANANDAN, A. DEVARAJ, R.S. VEMURI, C.M. WANG, T. VARGA, C.H. 

HENAGER JR, S. THEVUTHASAN, Pacific Northwest National Laboratory 

HI-ThP3 Helium and Neon Ion Beams Induced Platinum Deposition, H. WU, D. 

FERRANTI, D. XIA, W. THOMPSON, L.A. STERN, Carl Zeiss, P.D. RACK, C.M. GONZALEZ, The 

University of Tennessee, M.W. PHANEUF, Fibics Incorporated 


Room: Central Hall - Session MI-ThP 

Magnetic Interfaces and Nanostructures Poster Session 

6:00 pm 

MI-ThP1 Magnetic Properties of Ferromagnetic-Antiferromagnetic Bi-Layers 

with Different Spin Configuration, W. KIM, Korea Research Institute of Standards and 

Science (KRISS), G.-E. YANG, Chungnam National University, Korea, C. HWANG, Korea Research 

Institute of Standards and Science (KRISS), E. CHO, Chungnam National University, Korea 

MI-ThP2 Spin Dynamics and Exchange Bias in Core-Shell Fe\γ-Fe2O3 

Nanoparticles, S. CHANDRA, H. KHURSHID, University of South Florida, W. LI, G.C. 

HADJIPANAYIS, University of Delaware, M.H. PHAN, H. SRIKANTH, University of South Florida 

MI-ThP3 Ultra Low Power Neuromorphic Hardware Using Spin Based Devices, 

M. SHARAD, K. ROY, Purdue University 

MI-ThP4 Modeling-assisted Synthesis and Characterization of Epitaxial NiTiO3 

Films as New Multiferroics, T. VARGA, T.C. DROUBAY, M.E. BOWDEN, S.A. CHAMBERS, 

B.C. KABIUS, E. APRA, W.A. SHELTON, V. SHUTTHANANDAN, Pacific Northwest National 

Laboratory 

MI-ThP5 Nanomechanical Manipulation of the Anomalous Hall Effect in 

GaMnAs, J.H. LEE, M.L. CHO, Y.D. PARK, Seoul National University, Republic of Korea 

177



Room: Central Hall - Session NS-ThP 

Nanometer-scale Science and Technology Poster Session 

6:00 pm 

NS-ThP1 Composites of Silicone Nanofilaments and TiO2 Nanoparticles for 

Photocatalysis, G.R. MESECK, R. KONTIC, G.R. PATZKE, S. SEEGER, University of Zurich, 

Switzerland 

NS-ThP2 Organic Vapor Adsorption on In Situ Grown Carbon Nanotube Films, 

K. BOSNICK, S. BAN, W.K. HIEBERT, Z. SHI, C. HUANG, R. LISTER, M. MLECZKO, National 

Research Council of Canada 

NS-ThP3 Integrated Ultra-High Vacuum Tip-Enhanced Raman Spectroscopy 

with Molecular-Resolution Microscopy of Large Polyatomic Molecular 

Adsorbates on Single Crystal Surfaces, N. JIANG, E.T. FOLEY, J.M. KLINGSPORN, 

M.D. SONNTAG, M.C. HERSAM, R.P. VAN DUYNE, Northwestern University 

NS-ThP4 An New One-step Synthesis Method for Generating Nanocarbonsupported 

Metal Nanoparticle, J. KANG, L. LI, N. ZETTSU, O. TAKAI, N. SAITO, Nagoya 


NS-ThP5 The Role of an Amorphous Carbon Layer on a Multi-Wall Carbon 

Nanotube Attached Atomic Force Microscope Tip in Making Good Electrical 

Contact to a Gold Electrode, S.J. AHN, KRISS, Republic of Korea 

NS-ThP6 Passivation Effects on Electrical Properties of SnO2 Nanowires FET 

Treated by Nitrogen Plasma, Y.H. CHOI, P.S. KANG, J.H. NA, J.S. KIM, Korea University, 

Republic of Korea, S.-H. CHOI, Korea Institute of Science and Technology, Republic of Korea, M.Y. 

YOU, G.T. KIM, Korea University, Republic of Korea 

NS-ThP7 Application of Rolling Circle Amplification and Thermal Dynamic 

Principle for Manipulating the Interparticle Spacing of Gold Nanopaticle 

Chains, Y.P. LU, M.Y. LIN, Y.-C. OU, National Applied Research Laboratories, Taiwan, Republic 

of China 

NS-ThP8 Synthesis of Gold Nanofluids for Improved Heat Transfer using 

Solution Plasma, Y.K. HEO, M.A. BRATESCU, N. SAITO, Nagoya University, Japan 

NS-ThP9 Post Ion-Implant Growth of Epitaxial Graphene on 6H-SiC, J. SEO, H. 

SHIN, J.-H. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea 

NS-ThP11 Preparation of Metal Nanoparticles within Mesoporous Silica via 

Solution Plasma Process (SPP), W. YAOWARAT, N. SAITO, Nagoya University, Japan 

NS-ThP12 The Electrical Property of the Interface Between Dielectrophoresis 

(DEP)-Aligned Single-Walled Carbon Nanotubes and Semiconductors, M. 

HINES, Z. XIAO, Alabama A&M University 

NS-ThP13 Effect of Interface Spacing on Radiation Damage Tolerance of 

Metallic Nanolaminates, R.S. VEMURI, A. DEVARAJ, T. VARGA, V. SHUTTHANANDAN, 

C.M. WANG, S. THEVUTHASAN, C.H. HENAGER, Pacific Northwest National Laboratory, C.V. 

RAMANA, University of Texas at El Paso 

NS-ThP14 Field Emission Based Hydrogen Sensing Characteristics from 

Carbon Nanotubes Synthesized on Catalytical Substrates, C. DONG, Wenzhou 

University, Republic of China 

178 


Room: Central Hall - Session PS-ThP 

Plasma Science and Technology Poster Session 

6:00 pm 

PS-ThP1 Plasma Etch Challenges to Produce Metallization-Friendly Profiles at 

20nm and Beyond Technology Nodes in the BEOL, Y. MIGNOT, STMicroelectronics, 

R. KOSHY, GLOBALFOUNDRIES, Y. PARK, Samsung Electronics Co. Ltd., R. SRIVASTAVA, 

GLOBALFOUNDRIES, E. SODA, Renesas Electronics, Y. YIN, M. BEARD, B.G. MORRIS, IBM 

Microelectronics, K. TREVINO, GLOBALFOUNDRIES, J. ARNOLD, S. ALLEN, IBM 

Microelectronics, C. LABELLE, GLOBALFOUNDRIES, M. SANKARAPANDIAN, IBM 

Microelectronics, Y. LOQUET, STMicroelectronics, Y. FEURPRIER, L. WANG, J. STILLAHN, Y. 

CHIBA, V. GIZZO, K. KUMAR, Tokyo Electron Technology Center, America, LLC, C.A. WANG, Q. 

ZHANG, GLOBALFOUNDRIES, A. INADA, Renesas Electronics, S. MIGNOT, STMicroelectronics 

PS-ThP2 A Comparative Study of Plasma-Treated Fluoropolymers at 

Atmospheric Pressure, T. DUFOUR, J. HUBERT, N. VANDENCASTEELE, F. RENIERS, 

Université Libre de Bruxelles, Belgium 

PS-ThP3 Advances in 2D/3D Feature Profile Simulations, P. MOROZ, Tokyo Electron 

US Holdings Ltd 

PS-ThP4 Laser Thomson Scattering Measurements of Plasma Parameters in 

the Low Temperature Plasmas, J.-H. KIM, Korea Reseach Institute of Standards and 

Science, Republic of Korea, B.H. SEO, Korea Advanced Institute of Science and Technology, 

Republic of Korea, S.-J. YOU, D.J. SEONG, Korea Reseach Institute of Standards and Science, 


PS-ThP5 Development of a New Plasma Treatment Followed by a Bake for 

Photoresist Linewidth Roughness Smoothening, M. FOUCHIER, E. PARGON, 

CNRS/UJF-Grenoble1/CEA LTM, France, L. AZARNOUCHE, ST Microelectronics, France, K. 

MENGUELTI, M. BRIHOUM, CNRS/UJF-Grenoble1/CEA LTM, France 

PS-ThP6 Analysis of Target Oxidation in Reactive Sputter Deposition 

Processes of Silicon Dioxide, K. HOSHINO, K. DEMURA, S. TAMAYA, M. OKAMOTO, Y. 

MURAKAMI, Canon Inc, Japan, M. ISOBE, T. ITO, K. KARAHASHI, S. HAMAGUCHI, Osaka 


PS-ThP7 On the Origin of the Line Width Roughness of Photoresist Patterns 

after Plasma Exposure, R. RAMOS, M. BRIHOUM, K. MENGUELTI, L. AZARNOUCHE, M. 

FOUCHIER, E. PARGON, G. CUNGE, O. JOUBERT, LTM (CNRS / UJF-Grenoble1 / CEA), France 

PS-ThP8 Effect of Film Properties on Nitride Etching, T. WANIFUCHI, G. TAKABA, H. 

OHTAKE, M. SASAKI, Tokyo Electron Technology Development Institute, INC., Japan 

PS-ThP9 A DC-RF Magnetized Plasma Source, Y. RAITSES, I.D. KAGANOVICH, 

Princeton Plasma Physics Laboratory 

PS-ThP10 Quick Estimation of Deposition Rate for a Sputter System, G. DING, Y. 

WANG, J. CHENG, D. SCHWEIGERT, Z. SUN, M. LE, Intermolecular Inc. 

PS-ThP11 Chemical Modification of Polystyrene through S, SC and SH Ionbeam, 

K. CHOUDHARY, University of Florida, T. KEMPER, Georgia Institute of Technology, S.B. 

SINNOTT, University of Florida 

PS-ThP12 Application of E-beam Curing Technique to EUV Resist Utilizing DC 

Superimposed Capacitively-Coupled Plasma, M. HONDA, T. KATSUNUMA, K. 

NARISHIGE, Tokyo Electron Miyagi Ltd., Japan, K. YATSUDA, Tokyo Electron Limited, Japan 

PS-ThP13 SiH4/H2 and CH4 Multi-Hollow Discharge Plasma CVD of SiC Nano- 

Composite Anode for High Charge-Discharge Capacity Lithium Ion Batteries, 

Y. MORITA, Kyushu University, Japan 

PS-ThP14 Interface Trap Generation by VUV/UV Radiation from Fluorocarbon 

Plasma, M. FUKASAWA, Sony Corporation, Japan, Y. MIYAWAKI, Y. KONDO, K. TAKEDA, H. 

KONDO, K. ISHIKAWA, M. SEKINE, Nagoya University, Japan, H. MATSUGAI, T. HONDA, M. 

MINAMI, F. UESAWA, Sony Corporation, Japan, M. HORI, Nagoya University, Japan, T. TATSUMI, 

Sony Corporation, Japan 

PS-ThP15 Design of a Standalone Plasma Diagnostics Box, F.T. MOLKENBOER, 

H.H.P.TH. BEKMAN, F.H. ELFERINK, T.J. VERSLOOT, E. TE SLIGTE, N.B. KOSTER, TNO 

Technical Sciences, The Netherlands 

PS-ThP16 Line Edge Roughness Improvement in Hard-Mask Open Etch using 

Capacitively Coupled Plasma, A. KO, A. RANJAN, T. ENOMOTO, C. COLE, A. METZ, D. 

HETZER, K. KUMAR, S. DUNN, P. BIOLSI, Tokyo Electron Technology Center, America, LLC, L. 

CHEN, J. ZHAO, Tokyo Electron America 

PS-ThP17 Active Control of Electron Energy Distribution Function in dc 

Discharge using an Auxiliary Electrode, I. SCHWEIGERT, Institute of Theoretical and 

Applied Mechanics, V. DEMIDOV, West Virginia University, I.D. KAGANOVICH, Princeton Plasma 

Physics Laboratory 

PS-ThP18 A New Compact ICP Source for Neutral and Ion Beam Extraction, E. 

KARAKAS, V.M. DONNELLY, D.J. ECONOMOU, University of Houston 

PS-ThP19 The Role of Ions in the Gas-Surface Interactions of Nitrogen Oxide 

Plasma Systems, J.M. BLECHLE, M.F. CUDDY, E.R. FISHER, Colorado State University


PS-ThP20 Detailed Analysis of Si Substrate Damage Induced by HBr/O2- and 

H2-Plasma Etching and the Recovery Process Designs, Y. NAKAKUBO, A. 

MATSUDA, Kyoto University, Japan, M. FUKASAWA, Sony Corporation, Japan, Y. TAKAO, Kyoto 

University, Japan, T. TATSUMI, Sony Corporation, Japan, K. ERIGUCHI, K. ONO, Kyoto University, 

Japan 

PS-ThP21 Diagnosing Toroidally Confined Pure Electron Plasma using 

Electrostatic Waves, S.A. EXARHOS, M.R. STONEKING, J.W. DARRELL, Lawrence 

University 

PS-ThP22 Diagnostic Studies of Ar/c-C4F8 Plasmas: The Effect of N2-addition 

on Gas Phase and Surface Kinetics, P.K. KAO, Y.J. YANG, National Taiwan University, 

Taiwan, Republic of China, P.W. CHIOU, C.C. CHOU, Tokyo Electron Taiwan Limited, Taiwan, 

Republic of China, C.C. HSU, National Taiwan University, Taiwan, Republic of China 

PS-ThP23 Advanced Etch Profile Control and the Impact of Sidewall Angle at 

SiC Etch for Metal Filling Process, H.K. SUNG, W.S. LIM, K.W. LEE, S.K. KIM, J.W. CHOI, 

B.O. LEE, H.M. YOON, Y.S. LEE, M.L. PARK, E.A. CHO, J.K. KIM, H.K. KANG, C.G. KO, Korea 

Advanced Nano Fab Center, Republic of Korea 

PS-ThP24 Etching Characteristics of Magnetic Tunnel Junction Layer by using 

Non-Corrossive Gas Mixtures in ICP System, M.H. JEON, K.N. KIM, H.J. KIM, G.Y. 

YEOM, Sungkyunkwan University, Republic of Korea 

PS-ThP25 Evaluation of Surface Chemical Bonding State and Surface 

Roughness of Chemical Dry Etched Si using NO and F2 Gas Mixture, S. 

TAJIMA, T. HAYASHI, K. ISHIKAWA, M. SEKINE, M. HORI, Nagoya University, Japan 

PS-ThP26 High K Metal Gate Etching towards sub 14 nm Features, S. BARNOLA, 

L. DESVOIVRES, C. VIZIOZ, CEA, LETI, MINATEC Campus, France, C. ARVET, ST 

Microelectronics, Crolles, France 

PS-ThP27 The SiOx Thin Film Deposition by using a Double Discharge System 

with a HMDS/Ar/He/O2 Gas Composition, G.Y. KIM, J.B. PARK, G.Y. YEOM, 


PS-ThP28 The Effect of a Low Plasma-Induced Damage Etching on sub-32nm 

Metal Gate/High-k Dielectric CMOSFETs Characteristics, K.S. MIN, S.H. KANG, 

G.Y. YEOM, Sungkyunkwan University, Republic of Korea 

PS-ThP29 Catalytic Activities of Metal/Carbon Compound used by Vacuum and 

Solution Plasma Processes, H.S. LEE, M.A. BRATESCU, N. SAITO, Nagoya University, 

Japan 

PS-ThP30 Dry Etching Characteristics of ITO Thin Films for Transparent 

Electrodes, H.S. KIM, J.C. WOO, Y.H. JOO, L. CHEN, K.R. CHOI, Y.S. CHUN, C.I. KIM, Chung- 

Ang University, Republic of Korea 

PS-ThP31 Plasma Etching of PTFE: Differences between Low and Atmospheric 

Pressure Treatments, N. VANDENCASTEELE, J. HUBERT, T. DUFOUR, S. COLLETTE, C. 

DE VOS, F. RENIERS, Université Libre de Bruxelles, Belgium 

PS-ThP32 Surface Modification of Polyethylene Terephthalate using Water 

Containing He/O2 and Ar/O2 Plasma, P. LEROY, S. ABOU RICH, S. COLETTE, F. 

RENIERS, ULB, Belgium 

PS-ThP33 Numerical Investigation of Optimum Conditions for Magnetic Neutral 

Loop Discharge Plasma Production, S.H. KIM, D. AKBAR, J.L. SHOHET, University of 

Wisconsin-Madison, B.N. MOON, W.J. CHOI, Y.M. SUNG, Kyungsung University, Korea 

PS-ThP34 No- Residue and High- Rate Etching of InGaAs by High Density 

Plasma, Y. OHSAWA, Tokyo Electron Technology Center, America, LLC, H. NAKAJIMA, T. 

NISHIZUKA, M. TAKAHASHI, Tokyo Electron America, Y. TRICKETT, G. NAKAMURA, A. KO, 

Tokyo Electron Technology Center, America, LLC, H. OHTAKE, Tokyo Electron Technology 

Development Institute, INC., Japan, C. HUFFMAN, R. HILL, SEMATECH 

PS-ThP35 Using Capillary Array Windows to Minimize Ion Bombardment 

Effects during Plasma Processing of Dielectrics, K.W. HSU, F.A. CHOUDHURY, H. 

REN, University of Wisconsin-Madison, B.N. MOON, Kyungsung University, Korea, A.G. OLSON, 

University of Wisconsin-Madison, Y.M. SUNG, Kyungsung University, Korea, Y. NISHI, Stanford 

University, J.L. SHOHET, University of Wisconsin-Madison 

PS-ThP36 Deposition of YSZ Thin Films by Laser-Assisted Plasma Coating at 

Atmospheric Pressure (LAPCAP), Z. OUYANG, Y.L. WU, P. RAMAN, L. MENG, T.S. 

CHO, D.N. RUZIC, University of Illinois at Urbana Champaign 

PS-ThP38 Plasma Propagation Speed and Electron Temperature in 

Atmospheric Pressure Non-thermal Bioplasma Jet, P. SUANPOOT, Maejo University 

Phrae Campus, Thailand, Y.G. HAN, W.Y. LEE, G.S. CHO, E.H. CHOI, Kwangwoon University, 


PS-ThP39 Increase Film Quality and Campaign Length in Reactive Sputtering 

Applications With Pulsed-DC Power, D. PELLEYMOUNTER, Advanced Energy Industries 

Inc. 

PS-ThP40 Control of Radical/Ion Ratios in Electron Beam-Generated Plasmas 

and their Effect on Polymer Surface Modification, S.G. WALTON, E.H. LOCK, R. 

FERNSLER, Naval Research Laboratory 

179 

PS-ThP41 An Experimental Study on Large-Area Multiple ICP & Helicon Source 

for Oxidation in Semiconductor Process, J.-W. LEE, Korea Advanced Institute of Science 

and Technology, Republic of Korea, S.-H. AN, Agency for Defense Development, Republic of Korea, 

H.-Y. CHANG, Korea Advanced Institute of Science and Technology, Republic of Korea 

PS-ThP42 Development of DC Plasma Source with Low Electron Density under 

Very Low Pressure, B.-K. NA, I.-S. BAE, Korea Advanced Institute of Science and Technology, 

Republic of Korea, S.-J. YOU, J.-H. KIM, Korea Reseach Institute of Standards and Science, 

Republic of Korea, H.-Y. CHANG, Korea Advanced Institute of Science and Technology, Republic of 

Korea 

PS-ThP43 Atomic Layer Etching of Ultra-thin High-k Dielectric Film for Gate 

Oxide in MOSFET Devices, C.K. KIM, Sungkyunkwan University, Republic of Korea, J.K. 

KIM, Samsung Electronics Co. Ltd., Republic of Korea, G.Y. YEOM, Sungkyunkwan University, 


PS-ThP44 Study on the Plasma Damage on the Interface between the Titanium 

Nitride and Hafnium Oxide during Etching Carbon Mask on the Titanium 

Nitride, K.H. BAI, Y. JEON, M.C. KIM, S. CHOI, Samsung Electronics Co. Ltd., Republic of Korea 

PS-ThP45 Experimental and Simulation Studies of Capacitively Coupled Silan- 

Hydrogen Plasmas for Deposition of m-C Si Film, C.-H. FAN, S.-E. LIEN, K.-C. LEOU, 

National Tsing Hua University, Taiwan, Republic of China, C.-H. HSIEH, M.-C. WANG, C.-F. AI, 

Institute of Nuclear Energy Research, Taiwan, Republic of China 

PS-ThP46 Diagnostic Study of Plasmas in Solution Driven by Pulsed Power - 

Study of History Effect and Observation of S2 Emission, C.Y. SIE, C.C. HSU, 

National Taiwan University, Taiwan, Republic of China


Transparent Conductors and Printable Electronics Focus Topic 

Room: Central Hall - Session TC-ThP 

Transparent Conductors and Printable Electronics Poster 

Session 

6:00 pm 

TC-ThP1 Stability Investigation of Oxide TFTs with Al-doped ZnO Channel 

Layers Grown by Atomic Layer Deposition, C.H. AHN, M.G. YUN, S.W. CHO, H.K. 

CHO, Sungkyunkwan University, Republic of Korea 

TC-ThP2 Ellipsometry Characterization of Thin Organic Films for Flexible 

Electronics, C. EYPERT, M. STCHAKOVSKY, L. YAN, Horiba Scientific 

TC-ThP3 Study of Optical Transparency and Electrical Resistance of Indium 

TiN Oxide Coatings with Variable Stoichiopmetry, J.L. AMPUERO, Universidad 

Nacional de Ingeniería, Perú, C. BENNDORF, Hamburg University, Germany, A.F. TALLEDO, 

Universidad Nacional de Ingeniería, Perú 

TC-ThP4 Toward Active-Matrix Lab-On-Chip: Programmable Electrofluidic 

Device Integrated with the Arrayed IGZO Oxide Thin Film Transistors, J.H. NOH, 

J. NOH, P.D. RACK, University of Tennessee Knoxville 

Thin Film 

Room: Central Hall - Session TF-ThP 

Thin Film Poster Session 

6:00 pm 

TF-ThP1 Vanadium Oxide Thin Films Grown by ALD using TEMAV and O3 or 

H2O Precursors, A. PREMKUMAR, IMEC, Belgium, M. TOELLER, Tokyo Electron Limted, 

Japan, I. RADU, Katholieke Universitiet, Leuven, Belgium, C. ADELMANN, M. SCHAEKERS, J. 

MEERSSCHAUT, T. CONARD, J. MALGORZATA, S. VAN ELSHOCHT, IMEC, Belgium 

TF-ThP2 Roles of MoO3 Layer for Charge Injection and Charge Generation in 

an Organic Light Emitting Diode, M. KAWAMURA, S. YOSHIDA, Y. ABE, Kitami Institute of 

Technology, Japan 

TF-ThP3 Effect of Substrate Bias on Properties of Nanostructured TiZrN Thin 

Films Deposited by Radio Frequency Magnetron Sputtering, Y.-W. LIN, Instrument 

Technology Research Center, G.-P. YU, J.-H. HUANG, National Tsing Hua University, Taiwan, 


TF-ThP4 Effects of Preparation Conditions on the Magnetocaloric Effect of Gd 

Thin Films, H.F. KIRBY, D.D. BELYEA, J.T. WILLMAN, University of South Florida, C.G. 

HENDRYX, Newsome High School, C.W. MILLER, University of South Florida 

TF-ThP5 Advanced Analytical Characterization of Multilayered Thin Films for 

Corrosion Inhibition, G. ZORN, M. KARADGE, GE Global Research, C.C. PIERCE, J.I. 

MELZER, GE Power & Water, M.M. MORRA, GE Global Research 

TF-ThP6 Sputter Deposition of Atomically Smooth ZnO Films with Buffer Layers 

Crystallized via Nitrogen Mediation, K. KUWAHARA, Kyushu University, Japan 

TF-ThP7 Influence of Substrate Temperature on the Microstructure and Surface 

Morphology of Pulsed DC Magnetron Sputtered ZrB2 Films, C.T. LEE, W.C. CHEN, 

Instrument Technology Research Center, Taiwan, Republic of China 

TF-ThP8 Effect of Fluorine Doping on the Structural, Optical and Electrical 

Properties of CdS Films Deposited by Chemical Bath Deposition, K.E. NIETO- 

ZEPEDA, Cinvestav-IPN, Mexico, E. MOTA-PINEDA, ESIME-IPN, Mexico, M.A. ZAPATA-TORRES, 

CICATA-Legaria, IPN, Mexico, M.A. MELENDEZ-LIRA, Cinvestav-IPN, Mexico 

TF-ThP9 Interfacial Properties of Atomic Layer Deposited TiO2 Films on InAs 

(100) Surfaces, L. YE, T. GOUGOUSI, UMBC 

TF-ThP10 AES and XPS Characterizations in ALD ZnO Films Doped with Al 

and P, H. YUAN, Northwestern Polytechnical University, China, B. LUO, W.L. GLADFELTER, S.A. 

CAMPBELL, University of Minnesota 

TF-ThP11 High k Gate Dielectrics based on Titanium-Aluminum in GaAs 

Substrates for CMOS Technology, J. MIYOSHI, A.R. SILVA, L.P.B. LIMA, J.A. DINIZ, I. 

DOI, State University of Campinas, Brazil 

TF-ThP12 Photoluminescence and Life-Time Characterization of Polythiophene 

Incorporated with Dye Molecules, H. KOBE, H. KATO, A. YAMADA, S. TAKEMURA, T. 

HIRAMATSU, K. SHIMADA, K. MATSUI, Kanto Gakuin University, Japan 

TF-ThP13 Production of Miniaturized Optical Interference Filters Array for 

CMOS Sensor, C.-N. HSIAO, P.-K. CHIOU, H.-P. CHEN, B.-H. LIAO, Y.-W. LIN, F.-Z. CHEN, 

Instrument Technology Research Center, Taiwan 

TF-ThP14 Analysis of Thin Layers with Low Energy Ion Scattering (LEIS), B. 

HAGENHOFF, M. FARTMANN, D. BREITENSTEIN, Tascon GmbH, Germany, T. GREHL, ION-TOF 

GmbH, Germany, H.R.J. TER VEEN, Tascon GmbH, Germany 

TF-ThP15 Reaction Mechanism for the Atomic Layer Deposition of Titanium 

Dioxide using Titanium Tetrachloride and Titanium Tetraisopropoxide as 

Precursors, R.P. CHAUKULKAR, S. AGARWAL, Colorado School of Mines 

TF-ThP16 Nitrogen Doped Zinc Oxide Thin Films Prepared by Reactive RF 

Magnetron Sputtering of Zinc in Nitrous Oxide Atmosphere and Postdeposition 

Annealing Structural and Optical Properties, L.A. HERNÁNDEZ- 

HERNÁNDEZ, ESFM-IPN, Mexico, A. HERNÁNDEZ-HERNÁNDEZ, F. DE MOURE-FLORES, J.G. 

QUIÑONES-GALVÁN, CINVESTAV-IPN, Mexico, J.J. ARAIZA-IBARRA, UAF-UAZ, Mexico, M. 

MELÉNDEZ-LIRA, CINVESTAV-IPN, Mexico 

TF-ThP17 Physical and Electrical Characteristic of Atomic Layer Deposition of 

AlxHfyOz on Silicon, Y. LIN, W. LI, S. FANZ, R. CANDLER, UCLA 

TF-ThP18 Wetting Properties of Silicon Incorporated DLC Films, T.G. KIM, Pusan 

National University, Korea 

180

8:30 a.m. UHV Design and Practices 

8:30 a.m. Analysis of Mass Spectrometer (RGA) Spectra 

8:30 a.m. Sputter Deposition 

FRIDAY SHORT COURSES 


COURSE HOURS: All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (lunch not included) 

181

NOTES 

182


Room: 20 - Session AS+TF+VT-FrM 

Surface Analysis using Synchrotron Techniques 

Moderators: A. Herrera-Gomez, UAM-Azcapotzalco and CINVESTAV- 

Queretaro, Mexico, 

J.C. Woicik, National Institute of Standards and Technology 

8:20 am AS+TF+VT-FrM1 Surface and Interface Analyses by X-ray Absorption and 

Hard X-ray Photoemission Spectroscopies, Q. XIAO, X. CUI, Canadian Light 

Source, Canada, H. PIAO, General Electric Global Research Center, Y.F. HU, Canadian 

Light Source, Canada, T.K. SHAM, The University of Western Ontario, Canada 

8:40 am AS+TF+VT-FrM2 Differences in the Electronic Structure Highly-Oriented 

Films of H2-, Fe-, Co-, and Cu-Phthalocyanines Revealed by NEXAFS 

Spectroscopy, T.M. WILLEY, M. BAGGE-HANSEN, J.R.I. LEE, R. CALL, L. LANDT, T. 

VAN BUUREN, Lawrence Livermore National Laboratory, C. COLESNIUC, C.M. MONTON, I. 

SCHULLER, University of California, San Diego 

9:00 am AS+TF+VT-FrM3 Invited 

Hard X-ray Photoelectron Study of Graphene/ h-BN Layer Structures 

Grown on Polycrystalline Cu Substrates, L. KÖVÉR, MTA ATOMKI, Hungary, L. 

TAPASZTÓ, Inst. Tech. Physics and Materials Sci. & Korea-Hungary Joint Lab for 

Nanosciences, Hungary, C. HWANG, KRISS & Korea-Hungary Joint Lab for Nanosciences, 

Republic of Korea, L.P. BIRÓ, Inst. Tech. Physics and Materials Sci. & Korea-Hungary Joint 

Lab for Nanosciences, Hungary, I. CSERNY, J. TÓTH, A. CSIK, MTA ATOMKI, Hungary, W. 

DRUBE, S. THIESS, Deutsches Elektronen-Synchrotron DESY, Germany 


Room: 14 - Session EM+NS-FrM 

Low-Resistance Contacts to Nanoelectronics 

Moderator: S. Zollner, New Mexico State University 

EM+NS-FrM1 Invited 

Electrical Transport on Chemically Modified Silicon-on-Insulator 

Substrates, G.P. LOPINSKI, National Research Council of Canada 


EM+NS-FrM3 Evidence for Single Electron Tunnel Junction using Gold 

Nanoparticles on Oxide-Free Si(111), L. CAILLARD, O. SEITZ, P. CAMPBELL, 

University of Texas at Dallas, O. PLUCHERY, Université Pierre et Marie Curie, France, Y.J. 


9:20 am Invited talk continued. EM+NS-FrM4 A Distribution of Variable Size Sn-islands on 0.8 nm Oxide/ 

Si (111): Local MOS Properties and Tunneling Studied with Synchrotron 

Radiation, A. SILVA, Universidade Nova de Lisboa, Portugal, K. PEDERSEN, Aalborg 

University, Denmark, Z.S. LI, Aarhus University, Denmark, P. MORGEN, University of 

Southern Denmark 

9:40 am AS+TF+VT-FrM5 Beyond Hard X-ray Photoelectron Spectroscopy: 

Simultaneous Combination with X-ray Diffraction, G.R. CASTRO, J. RUBIO- 

ZUAZO, SpLine at the European Synchrotron Radiation Facility, France 

10:00 am AS+TF+VT-FrM6 Spectroscopic Imaging using Vector Potential 

Photoelectron Microscopy, R. BROWNING, R. Browning Consultants 

Friday Morning, November 2, 2012 

10:20 am AS+TF+VT-FrM7 Trends in Synchrotron-based Photoemission; High 

Energy and High Pressure, H.J. BERGERSEN, J. ÅHLUND, R. MOBERG, VG 

Scienta, Sweden 


EM+NS-FrM5 Signatures of Interface Band Structure and Parallel 

Momentum Conservation of Hot Electrons across Metal-Semiconductor 

Schottky Diodes, J. GARRAMONE, Northwestern University, J. ABEL, R. BALSANO, 

University at Albany-SUNY, S. BARRAZA-LOPEZ, University of Arkansas at Fayetteville, 

V.P. LABELLA, University at Albany-SUNY 

EM+NS-FrM6 Metal-Fullerene Interfaces: A Dynamic System, P. REINKE, J.B. 

MCCLIMON, H. SAHALOV, University of Virginia 

EM+NS-FrM7 Invited 

Scaling Silicide Contacts in Microlelectronics: At What Size will Material 

Characteristics affect Device Poperties ?, C. LAVOIE, IBM T.J. Watson Research 

Center 

11:00 am EM+NS-FrM9 Compositional Dependence of the Dielectric Function and 

Optical Conductivity of NiPt Alloy Thin Films, L.S. ABDALLAH, T. TAWALBEH, 

I.V. VASILIEV, S. ZOLLNER, New Mexico State University, C. LAVOIE, IBM T.J. Watson 

Research Center, A. OZCAN, IBM Systems and Technology Group, M. RAYMOND, 

GLOBALFOUNDRIES 

11:20 am EM+NS-FrM10 Ultra-Shallow Junction Formation for sub-22nm CMOS 

Technology and Characterization using High-resolution SIMS, M.J.P. 

HOPSTAKEN, H. WILDMAN, D. PFEIFFER, IBM T.J. Watson Research Center, Z. ZHU, P. 

RONSHEIM, IBM Systems and Technology Group, K.K. CHAN, I. LAUER, J.S. NEWBURY, 

D.-G. PARK, IBM T.J. Watson Research Center 

11:40 am EM+NS-FrM11 A Deep Dive into the Liquid Fermi Sea, R.K. SCHULZE, J.C. 

LASHLEY, B. MIHAILA, D.C. WALLACE, Los Alamos National Laboratory 

183


Room: 15 - Session EN+SS-FrM 

Photocatalysis and Solar Fuels 

Moderator: N.G. Petrik, Pacific Northwest National Laboratory 

8:20 am EN+SS-FrM1 Atomic Layer Deposition for Electronic Band Engineering of 

Silicon Photoelectrochemical Cells, B. KALANYAN, M.D. LOSEGO, D.H. KIM, 

G.N. PARSONS, North Carolina State University 

8:40 am EN+SS-FrM2 Photochemical Hole Scavenging Reactions of Methanol on 

TiO2: Identification of Active Species and Water Coadsorption Study, M. 

SHEN, M.A. HENDERSON, Pacific Northwest National Laboratory 

9:00 am EN+SS-FrM3 Nanostructured Antimony Doped Tin Oxide Enhances 

Photoelectrochemical Water Splitting by Supported TiO2, Q. PENG, Duke 

University, B. KALANYAN, North Carolina State University, M. ANDREW, P. HOERTZ, 

Research Triangle Institute, L. ALIBABAEI, University of North Carolina at Chapel Hill, J. LIU, 

Duke University, T.J. MEYER, University of North Carolina at Chapel Hill, G.N. PARSONS, 

North Carolina State University, J.T. GLASS, Duke University 

9:20 am EN+SS-FrM4 Plasmon-Mediated Charge Transfer in Au-TiO2 

Heterostructures for Visible Light Water-Splitting, J. DUCHENE, B. SWEENY, 

University of Florida, A. JOHNSTON-PECK, D. SU, Brookhaven National Laboratory, W.D. 

WEI, University of Florida 

9:40 am EN+SS-FrM5 Narrowing of Band Gap in 1D Arrays of TiO2 Nanoparticles 

for Photocatalysis: Studies using X-ray Spectroscopies with In Situ 

Water Exposure and Heating, Y. LIU, J. TAING, University of California Irvine, C.C. 

CHEN, SLAC National Accelerator Lab, A. SORINI, Lawrence Livermore National Lab, M.H. 

CHENG, University of California Irvine, H. BLUHM, Z. LIU, Lawrence Berkeley National Lab, 

T. DEVEREAUX, SLAC National Accelerator Lab, J.C. HEMMINGER, University of California 

Irvine 

10:00 am EN+SS-FrM6 A Theoretical Study of Carbon Dioxide Reduction on 

Catalysts, T. LIANG, Y.-T. CHENG, S.R. PHILLPOT, S.B. SINNOTT, University of Florida 

10:20 am EN+SS-FrM7 Doping Effects on the Electronic Structure of Graphitic C3N4 

Photocatalysts: Insights from First Principles, S. ZULUAGA, S. STOLBOV, 

University of Central Florida 


Room: 16 - Session ET+SS+GR+SP-FrM 

Electron Transport at the Nanoscale: Development of 

Theories and Techniques 

Moderator: C. Su, Bruker Nano 

ET+SS+GR+SP-FrM1 Invited 

What is Missing in the Space Charge Limited Current Theory?, X.-G. 

ZHANG, Oak Ridge National Laboratory, S.T. PANTELIDES, Vanderbilt University 



ET+SS+GR+SP-FrM3 Mapping Solar Cell Internal Fields and Band Offsets, 

H. COHEN, Y. ITZHAIK, G. HODES, Weizmann Institute of Science, Israel 

ET+SS+GR+SP-FrM4 Quantum Degeneracy Revealed by the Relation 

between the Tunneling Current and the Chemical Force, P. JELINEK, M. 

ONDRACEK, Institute of Physics of ASCR, Czech Republic, F. FLORES, Universidad 

Autonoma de Madrid, Spain 

ET+SS+GR+SP-FrM5 Understanding the Influence of the Tunneling Current 

and the Chemical Force on the Contrast Formation in KPFM, Z. MAJZIK, M. 

ONDRÁČEK, M. ŠVEC, J. BERGER, P. JELÍNEK, Institute of Physics of ASCR, Czech 

Republic 

ET+SS+GR+SP-FrM6 An In Situ Technique for Using Ballistic Electron 

Emission Microscopy to Measure Hot Electron Transport at Metal 

Semiconductor Interfaces, R. RALSANO, V.P. LABELLA, University at Albany-SUNY 

ET+SS+GR+SP-FrM7 Invited 

Electronic Transport on the Nanoscale, R. MOELLER, University of Duisburg- 

Essen, Germany 

11:00 am ET+SS+GR+SP-FrM9 A Transport Perspective on Local Manipulation of 

Ferroelectric and Correlated Electron Surfaces, P. MAKSYMOVYCH, Oak 

Ridge National Laboratory 

11:20 am 

11:40 am 


184


Room: 13 - Session GR+EM+ET+MS+NS-FrM 

Graphene Device Physics and Applications 

Moderator: A. Turchanin, University of Bielefeld, Germany 

8:20 am GR+EM+ET+MS+NS-FrM1 Invited 

Heterointegration of Graphene with Nano and Molecular Scale 

Structures for High Performance Devices, X. DUAN, University of California, Los 

Angeles 



Graphene RF: From Fundamentals to Opportunities, J.S. MOON, H.-C. SEO, 

M. ANTCLIFFE, S. LIN, A. SCHMITZ, D. LE, C. MCGUIRE, D. ZEHNDER, HRL Laboratories 

LLC, L.O. NYAKITI, V.D. WHEELER, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, 

P.M. CAMPBELL, Naval Research Laboratory, K.-M. LEE, P. ASBECK, UC San Diego 



Graphene and Dielectric Integration: A Sticky Situation?, V.D. WHEELER, 

N.Y. GARCES, L.O. NYAKITI, R.L. MYERS-WARD, D.J. MEYER, U.S. Naval Research 

Laboratory, A. NATH, George Mason University, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval 




10:20 am GR+EM+ET+MS+NS-FrM7 Achieving Scaled Dielectrics on Graphene Using 

Atomic Layer Deposition, S. JANDHYALA, G. MORDI, R.M. WALLACE, J. KIM, 


10:40 am GR+EM+ET+MS+NS-FrM8 Atomically-Smooth MgO Films Grown on Epitaxial 

Graphene by Pulsed Laser Deposition, S.C. STUART, A.A. SANDIN, North 

Carolina State University, O. NAYFEH, M.D. DUBEY, Army Research Laboratory, J.E. 

ROWE, D.B. DOUGHERTY, North Carolina State University, M.D. ULRICH, Army Research 

Office 

11:00 am GR+EM+ET+MS+NS-FrM9 Facile, Controllable Graphene-based P-N 

Junctions Using Self-Assembled Monolayers, J. BALTAZAR, H. SOJOUDI, J. 

KOWALIK, L. TOLBERT, S. GRAHAM, C.L. HENDERSON, Georgia Institute of Technology 

11:20 am GR+EM+ET+MS+NS-FrM10 Impact of Cleaning Procedures on the 

Performance of Graphene-Based Field Effect Transistors, M. LODGE, M. 

ISHIGAMI, University of Central Florida 

11:40 am GR+EM+ET+MS+NS-FrM11 High Efficiency Graphene Solar Cells by 

Chemical Doping, X. MIAO, S. TONGAY, M.K. PETTERSON, K. BERKE, A.G. 

RINZLER, B.R. APPLETON, A.F. HEBARD, University of Florida 

185

NOTES 

186

Lunch 




8:00 am ______________________________________________________________________________________________________________________________________________ 

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9:40 am ______________________________________________________________________________________________________________________________________________ 

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10:40 am ______________________________________________________________________________________________________________________________________________ 

11:00 am ______________________________________________________________________________________________________________________________________________ 

11:20 am ______________________________________________________________________________________________________________________________________________ 

11:40 am ______________________________________________________________________________________________________________________________________________ 

12:00 pm ______________________________________________________________________________________________________________________________________________ 

when ______________________________________________________________________________________________________________________________________________ 

with ______________________________________________________________________________________________________________________________________________ 

where ______________________________________________________________________________________________________________________________________________ 


Friday Afternoon, November 2, 2012 


1:00 pm ______________________________________________________________________________________________________________________________________________ 

1:20 pm ______________________________________________________________________________________________________________________________________________ 

1:40 pm ______________________________________________________________________________________________________________________________________________ 

2:00 pm ______________________________________________________________________________________________________________________________________________ 

2:20 pm ______________________________________________________________________________________________________________________________________________ 

2:40 pm ______________________________________________________________________________________________________________________________________________ 

3:00 pm ______________________________________________________________________________________________________________________________________________ 

3:20 pm ______________________________________________________________________________________________________________________________________________ 

3:40 pm ______________________________________________________________________________________________________________________________________________ 

4:00 pm ______________________________________________________________________________________________________________________________________________ 

4:20 pm ______________________________________________________________________________________________________________________________________________ 

4:40 pm ______________________________________________________________________________________________________________________________________________ 

5:00 pm ______________________________________________________________________________________________________________________________________________ 

187

— A — 

Abbott, J.: LB+EM+GR+MN+TR-WeA3, 

146 

Abdallah, J.: PS2-TuM9, 108 

Abdallah, L.S.: EL+TF+AS+EM+SS-TuP2, 

125; EL+TF+BI+AS+EM+SS-MoA9, 92; 

EM+NS-FrM9, 183 

Abdulagatov, A.: TF+EN-MoA3, 98 

Abe, M.: SP+AS+BI+ET+MI+NS-TuA11, 

119 

Abe, S.: EN-ThP12, 175 

Abe, Y.: TF-ThP2, 180 

Abel, J.: EM+NS-FrM5, 183; 

GR+AS+NS+SP+SS-TuA11, 115 

Abel, M.-L.: AS-TuP4, 124 

Abell, J.L.: TF+SE+NS-WeM12, 139 

Abou Rich, S.: PS-ThP32, 179 

Abraha, P.: LB+EM+GR+MN+TR-WeA2, 

146 

Abraham, B.: SE+PS-TuM6, 108 

Abrasonis, G.: SE+NS-MoM2, 88 

Acharya, A.: EM-ThP5, 175 

Acomb, P.: VT-TuP2, 130 

Adam, T.N.: 

EL+TF+AS+EM+SS+PS+EN+NM- 

MoM9, 83 

Adamiv, V.T.: AC+TF+SS+MI-MoA7, 91 

Adams, D.: TF+EM+SE+NS-ThM5, 162 

Adamska, L.: ET+SS+GR+SP-ThA4, 168; 

GR+AS+EM+NS+SS-WeA2, 145 

Adderley, P.A.: VT-MoM5, 90; VT-TuP16, 

130 

Addou, R.: GR+EM+NS+SS+TF-ThA7, 169 

Adelmann, C.: IS+AS+OX+ET-WeM9, 135; 

TF-ThP1, 180 

Adesanya, K.: MN+AS-MoM10, 85 

Adib, K.: SS-TuM4, 109 

Adiga, V.P.: MN-MoA1, 94; MN-TuM10, 

106; MN-TuM11, 106 

Adusumilli, S.P.: EN+TF-WeA12, 144 

Agarwal, A.: PS2-MoA3, 97; PS2-TuM11, 

108 

Agarwal, S.: EN+PS-WeM4, 133; NS-MoM6, 

86; PS-MoM10, 88; TF-ThP15, 180 

Ahanotu, O.N.: NS+SP-MoA11, 95 

Ahlgren, M.: TF+NS+EM-ThM11, 163 

Åhlund, J.: AS+TF+VT-FrM7, 183 

Ahmadi, M.: SS-TuP25, 129 

Ahn, C.H.: TC-ThP1, 180 

Ahn, J.R.: GR+EM+NS+PS+SS+TF-MoM11, 

85; GR+EM+NS+PS+SS+TF-MoM4, 85; 

GR-ThP6, 176; NS+EN-TuM1, 107; NS- 

ThP9, 178; SS+NS-ThA3, 170 

Ahn, S.J.: NS-ThP5, 178 

Ai, C.-F.: PS-ThP45, 179 

Ai, M.: HI+AS+BI+NS-ThM5, 158 

Aihara, T.: EN+TF-TuA11, 114; EN+TF- 

TuA12, 114 

Ajayan, P.: GR+EM+NS+SS+TF-ThA3, 169 

Ajayi, O.: TF-MoM8, 89 

Akarvardar, K.: PS2-TuM9, 108 

Akarvardar, S.: PS2-TuM9, 108 

Akbar, D.: PS-ThA7, 170; PS-ThP33, 179 

Akhmetov, A.: BI+AS-TuA8, 113 

Akram, A.: EN+TF-MoA11, 93 

Aksamija, Z.: EM+SS+AS+NS-ThM10, 155 

Akturk, A.: EM+OX-WeA9, 144 

Akyildiz, H.: TF2-TuA10, 120 

Alaboson, J.M.P.: GR+AS+NS+SP+SS- 

TuA9, 115 

Alavi, Z.: AS-WeM6, 132 

Al-Bataineh, S.A.: PS+BI-MoA7, 96 

Albert, M.: NM+AS+MS-MoM4, 86 

Albin, D.S.: EN+AS-ThA1, 167 

Albrecht, P.M.: SS-TuM11, 109 

Authors Index 

Bold page numbers indicate the presenter 

Alcantara Ortigoza, M.: AS+BI-TuA1, 113; 

EN+NS-ThM3, 156; NS-MoM10, 86 

Alcántara Ortigoza, M.: AS+BI-TuA3, 113 

Alcantara, M.: SS+NS-ThA9, 170 

Aldinger, B.S.: NS-ThM9, 159 

Aldred, N.: BI-TuP16, 125 

Alem, N.: GR+AS+NS+SS-ThM5, 157 

Alexander, M.R.: BI+SS+NS-WeM12, 132; 

BI-MoA10, 92; BI-MoA4, 92; BI-MoA8, 

92; MB+BI-ThM12, 158 

Alexander, W.A.: SS-MoA1, 98 

Alexander-katz, A.: MN-MoA11, 94 

Alexandre Diniz, J.: EM-ThP7, 175 

Algarin-Amaris, P.: EN+TF-WeA8, 144 

Alialy, S.: EN-ThP13, 175 

Alian, A.: EM+TF+OX+GR-MoA1, 93 

Alibabaei, L.: EN+SS-FrM3, 184 

Allard, L.F.: IS-TuP3, 126 

Allen, M.S.: MN-MoA6, 94; MN-TuM6, 106 

Allen, S.: BI+SS+AS-TuM1, 103; PS-ThP1, 

178; SP+AS+BI+ET+MI+NS-TuA9, 119 

Allen, T.: NS+AS+SS+SP-WeM2, 136 

Allers, L.: EW-WeL1, 142 

Alles, M.L.: EM+SS+AS+NS-ThM11, 155 

Allred, D.D.: MN+AS-MoM4, 85 

Al-Mahboob, A.: GR-ThP11, 176; 

IS+AS+BI+ET+GR+NS-TuA8, 116 

Almer, J.: TF+NS+EM-ThM11, 163 

Alnabulsi, S.S.: AS-ThA3, 166 

Alper, J.P.: EN+TF-WeA4, 144 

Altansukh, B.: PS2-ThM11, 160 

Altfeder, I.: TR-TuA12, 121 

Altman, E.I.: OX+SS+TF+MI-MoA2, 96; 

SP+AS+BI+ET+MI+NS-TuA10, 119 

Alvarez, C.: IS+AS+BI+ET+GR+NS-TuA7, 

116 

Alves, E.: AC+TF+SS+MI-MoA9, 91 

Amano, H.: PS2-ThM5, 160 

Amanpour, M.: GR-ThP8, 176; SS-WeA1, 

150 

Ambaye, H.: MI+OX-WeA12, 147 

Aminpour, M.: AS+BI-TuA1, 113; AS+BI- 

TuA3, 113 

Ampuero, J.L.: TC-ThP3, 180 

Amstad, E.: NS+EN+GR-TuA1, 117 

An, S.-H.: PS-ThP41, 179 

Ancona, M.G.: TF+AS-TuA3, 120 

Anders, A.: SE+PS-TuM1, 108; SE+PS- 

TuM10, 108 

Andersen, J.N.: GR+AS+NS+SP+SS-TuA7, 

115; IS+AS+SS+EN-TuM12, 105 

Andersen, O.Z.: BI-MoM11, 83; BI-TuP1, 

125 

Anderson, C.M.: PS-WeM3, 137 

Anderson, D.G.: BI-MoA10, 92; BI-MoA4, 

92; BI-MoA8, 92; MB+BI-ThM12, 158 

Anderson, E.V.: MB+BI-ThM6, 158 

Anderson, K.: MI+OX-WeA2, 147 

Anderson, T.J.: EM-ThP4, 175; EN+TF- 

TuM10, 104; GR+EM+ET+NS+TF- 

MoA1, 94; GR-ThP9, 176 

Andersson, P.: SS-MoA11, 98 

Ando, T.: EM+TF+OX+GR-MoA7, 93 

Andrew, M.: EN+SS-FrM3, 184 

Ansai, H.: PS2-ThM4, 160 

Ansari, N.: TR+SE-WeM10, 140 

Antcliffe, M.: GR+EM+ET+MS+NS-FrM3, 

185 

Antohe, A.: VT-TuP9, 130 

Antonelli, G.A.: EM-ThP10, 175 

Antony, A.: SS+EN+OX-ThM10, 161 

Anuniwat, N.: MI+EN+BI-TuA7, 116 

Anwar, S.R.M.: EM+TF+OX+GR-MoA4, 93 

Aoki, T.: AS-ThM9, 155 

Aoki, Y.: SS-MoA8, 98 

Author Index 188 

Aouadi, S.: SE+NS-MoA1, 97 

Apalkov, D.: MI+OX-WeA7, 147 

Apkarian, V.A.: SP+AS+BI+ET+MI+NS- 

TuA3, 119 

Appleton, B.R.: GR+EM+ET+MS+NS- 

FrM11, 185; LB+EM+GR+MN+TR- 

WeA7, 146 

Apra, E.: MI-ThP4, 177 

Arahara, S.: SS-TuP7, 129 

Arai, K.: VT-MoA1, 99; VT-MoA4, 99 

Araiza-Ibarra, J.J.: TF-ThP16, 180 

Arakawa, I.: TR-TuP2, 130; VT-TuP8, 130 

Arcot, A.R.: BI+AS-TuA3, 113 

Areias, A.C.: AS-TuP11, 124; BI+AS-TuA7, 

113 

Arenholz, E.: GR+AS+EM+MI+MN-TuM9, 

105 

Argibay, N.: LB+EM+GR+MN+TR-WeA1, 

146 

Ariyan, M.: EN-ThP9, 175 

Arlinghaus, H.F.: AS-TuP1, 124; BI-TuP12, 

125 

Arman, M.A.: GR+AS+NS+SP+SS-TuA7, 

115; IS+AS+SS+EN-TuM12, 105 

Armstrong, S.: EW-TuA6, 115 

Arnadottir, L.: SS-ThA6, 171 

Arnau, A.: SS-ThA7, 171 

Arnebrant, T.: BI+SS+AS-TuM3, 103 

Arnold, J.: PS2-TuM9, 108; PS-ThP1, 178; 

PS-WeM4, 137 

Arnold, M.S.: EN+TF-TuA3, 114; 


Arnold, P.C.: VT-MoA11, 99 

Arpa, R.: VT-TuM9, 110 

Arpa-Sancet, M.P.: BI-TuP16, 125 

Arpin, K.A.: EN+NS-ThA1, 168 

Arregi, J.A.: MI+EN+BI-TuA12, 116 

Artyushkova, K.: EN+AS-ThA6, 167; 

IS+AS+SS+EN-TuM6, 105 

Arunachalam, V.: PS-WeM11, 137 

Arvet, C.: PS-ThP26, 179 

Aryal, P.: 


MoM1, 83 

Asadollahbaik, A.: HI+AS+BI+NS-ThM3, 

158 

Asami, S.: NM-TuP1, 127 

Asbeck, P.: GR+EM+ET+MS+NS-FrM3, 185 

Ashurst, W.R.: TR+SE-WeM10, 140 

Assoufid, L.: SE-TuP4, 128 

Asthagiri, A.: OX-TuP1, 127; SS+EN+OX- 

ThM10, 161 

Ataç, D.: NS+SP-MoA9, 95 

Atalay, R.: EM+TF+AS-ThA11, 167; 

EM+TF+AS-ThA9, 167; EM-ThP6, 175 

Atanassov, P.: EN+AS-ThA6, 167; 


Atkinson, S.: MB+BI-ThM12, 158 

Attili, S.: BI+AS-TuA9, 113 

Attygalle, D.: 


MoM1, 83 

Atwater, H.A.: EN+TF-TuA1, 114 

Aubry, O.: PS+EM-MoM3, 87 

Auer, M.: TF+EM+SE+NS-ThM6, 162 

Auerbach, D.J.: SS-MoM4, 89 

Augustine, B.H.: SS-WeM10, 138 

Autes, G.: GR+AS+NS+SS-ThM5, 157 

Auzély, R.: BI+SS+NS-WeM10, 132 

Avci, R.: NS-ThM12, 159 

Axnanda, S.: IS+AS+SS+EN-TuM4, 105 

Aydil, E.S.: EN+TF-MoA8, 93; EN+TF- 

MoA9, 93; EN+TF-TuM9, 104 

Ayers, J.E.: EM+MI-ThA1, 166; EM+MI- 

ThA2, 166

Azarnouche, L.: PS2-TuM2, 108; PS-ThP5, 

178; PS-ThP7, 178 

— B — 

Baba, A.: TF+AS-WeA8, 151 

Baber, A.: SS-WeM1, 138 

Babu, M.: EN-ThP8, 175 

Baby, A.: TF+NS+EM-ThM10, 163 

Baddorf, A.P.: ET+NS+EM-ThM3, 157; SS- 

WeM4, 138 

Bader, S.D.: MI+EN+BI-TuA1, 116 

Bae, H.-B.: EM+OX-WeA11, 144 

Bae, I.-S.: PS-ThP42, 179 

Baehtz, C.: SE+NS-MoM2, 88 

Baek, H.-J.: EN+NS-MoM1, 84 

Baek, K.-H.: MN+AS-MoM8, 85 

Baer, D.R.: AS+BI-TuA12, 113; AS-TuP17, 

124; BI-TuP9, 125 

Baeumer, M.: NS+AS+SS+SP-WeM3, 136 

Bagge-Hansen, M.: AS+TF+VT-FrM2, 183; 

IS+AS+OX+ET-WeM6, 135; 

NS+AS+SS+SP-WeM3, 136 

Bagnall, D.M.: HI+AS+BI+NS-ThM3, 158 

Bagus, P.S.: SS+OX-WeM9, 138 

Bahng, W.: EM-TuM10, 103 

Bai, J.: TF2-TuA3, 120 

Bai, K.H.: PS-ThP44, 179 

Baikie, I.D.: EW-WeL6, 142 

Bailey, C.: EN+NS-MoM10, 84 

Bakhru, H.: EM+TF+OX+GR-MoM3, 84 

Baklanov, M.R.: PS1-ThM2, 160 

Balci, S.: ET+NS+EM-ThM11, 157 

Baldasseroni, C.: MI+OX-WeA1, 147 

Baldo, P.M.: IS+AS+OX+ET-WeM3, 135 

Baldwin, M.J.: PS2-WeA1, 148 

Ballinger, T.: EW-TuL1, 111 

Balog, J.: IS+AS+BI+ET+GR+NS-TuA3, 116 

Balsano, R.: EM+NS-FrM5, 183 

Baltazar, J.: GR+EM+ET+MS+NS-FrM9, 

185; GR-ThP10, 176 

Ban, S.: NS-ThP2, 178 

Banerjee, S.K.: EM+OX-WeA1, 144 

Banik, A.: PS2-TuM1, 108; PS2-TuM6, 108 

Banna, S.: PS-ThA10, 170 

Banquy, X.: TR-TuA4, 121 

Bao, K.: NS-ThM9, 159 

Bao, Y.: MI+EN+BI-TuA9, 116 

Baran, N.: BI-TuP14, 125 

Barankova, H.: SE+PS-TuA7, 118 

Barbacci, D.: BN+AS-WeA12, 143 

Barback, C.V.: BI-TuP15, 125; BN+AS- 

WeA3, 143 

Barcaro, G.: SS+OX-WeM12, 138 

Bardos, L.: SE+PS-TuA7, 118 

Bare, S.R.: SS-WeA7, 150 

Barkam, S.: BI-TuP7, 125; BI-TuP8, 125; SS- 

TuP12, 129 

Barker, P.M.: SE+PS-TuM5, 108 

Barkett, L.A.: MN-MoA6, 94 

Barkley, S.: TR+SE-WeM10, 140 

Barlam, D.: OX+EM+MI+NS+TF-MoM11, 

87 

Barlaz, D.E.: SS+EN+OX-ThM4, 161 

Barlow, A.J.: SS+NS-ThA7, 170 

Barmak, K.: EM-TuA2, 114; EM-TuA7, 114 

Barnes, T.: TF+AS-WeA10, 151 

Barnola, S.: MN-TuP3, 126; PS2-TuM5, 108; 

PS-ThP26, 179 

Barraud, S.: PS2-TuM5, 108 

Barraza-Lopez, S.: EM+NS-FrM5, 183 

Barrett, D.A.: BI-MoA8, 92 

Barrett, L.: MN+AS-MoM4, 85 

Barrett, N.: GR+AS+NS+SP+SS-TuA1, 115 

Barteau, M.: SS-WeA9, 150 

Bartels, C.: SS-MoM4, 89 

Bartels, L.: GR-ThP8, 176; 

SP+AS+BI+ET+MI+NM+NS+SS+TF- 

WeM5, 137; SS-WeA1, 150; SS-WeM2, 

138 

Bartelt, N.C.: TF+EM+SS-ThA10, 172 

Bartha, J.W.: NM+AS+MS-MoM4, 86 

Bartis, E.: PS+BI-MoA2, 96; PS+BI-MoA6, 

96 

Barton, D.: 


MoM10, 83 

Barton, R.A.: MN-MoA1, 94; MN-TuM10, 

106; MN-TuM11, 106 

Bartynski, R.A.: AS-MoA10, 91; EN+AS- 

ThA9, 167; OX+SS+TF+MI-MoA6, 96 

Baruth, A.: EN+TF-MoA9, 93 

Baski, A.A.: EM+TF+AS-ThA4, 167; 

SS+EM-WeA1, 149 

Basu, D.: EM+OX-WeA1, 144 

Batan, A.: SE+PS-TuA9, 118 

Batzill, M.: GR+AS+EM+NS+SS-WeA8, 

145; GR+EM+NS+SS+TF-ThA7, 169; 

SS-TuP15, 129 

Bauer, E.: IS+AS+OX+ET-WeM3, 135 

Bauer, S.: BI-TuP16, 125 

Baughman, W.: ET+NS+EM-ThM11, 157; 

NM+AS+MS-MoM5, 86 

Baum, J.: SP-TuP1, 128 

Baumann, T.: IS+AS+OX+ET-WeM6, 135 

Baur, M.: AS-ThM10, 155 

Baykara, M.Z.: SP+AS+BI+ET+MI+NS- 

TuA10, 119 

Bazarov, I.: VT+AS+SS-WeM2, 140; VT- 

TuA11, 121 

Be, C.L.: BI-MoM5, 83 

Beard, M.: PS2-TuM9, 108; PS-ThP1, 178; 

PS-WeM1, 137 

Beard, M.C.: EN+NS-MoM3, 84 

Beaudry, A.L.: TF+SE+NS-WeM9, 139 

Becchaku, M.: SS-TuP17, 129 

Beck, D.: SP+AS+BI+ET+MI+TF-WeA11, 

149 

Becker, C.R.: EN+NS-ThM10, 156 

Becker, J.S.: PS1-TuA11, 117; TF+EM+SS- 

ThA7, 172; TF-WeM1, 139 

Becker, U.: VT-MoA1, 99 

Beckers, M.: BN+AS-WeA11, 143 

Bedzyk, M.J.: GR+AS+BI+PS+SS-WeM1, 

134; GR+AS+NS+SP+SS-TuA9, 115 

Beech, I.: NS-ThM12, 159 

Beechem, T.E.: GR+AS+NS+SP+SS-TuA8, 

115 

Behafarid, F.: SS+NS-ThA8, 170; SS-TuP27, 


Behkam, B.: BI-TuP10, 125 

Bekman, H.H.P.Th.: HI+AS+NS-WeA9, 146; 

PS-ThP15, 178 

Belu, A.: AS+BI-TuM4, 102 

Belyansky, M.P.: NM+NS+MS+EM-MoA4, 

95 

Belyea, D.D.: TF-ThP4, 180 

Bemis, J.: EW-TuM8, 104; 

SP+AS+BI+ET+MI+TF-WeA11, 149 

Benavidez, T.: EL+TF+BI+AS+EM+SS- 

MoA3, 92 

Benedek, G.: EM+TF-WeM12, 133 

Benndorf, C.: TC-ThP3, 180; TR-TuP4, 130 

Bennetsen, D.T.: BI+SS+NS-WeM1, 132 

Bennett, B.: EM+TF+OX+GR-MoA10, 93 

Bennett, C.J.: GR+AS+BI+PS+SS-WeM9, 

134 

Bennett, E.: SE-TuP4, 128 

Bent, S.F.: EM-TuA1, 114; SS+EM-WeA8, 

149 

Bentabet, A.: AS-TuP25, 124 

Ben-Yoav, H.: BI+SS+NS-WeM2, 132 

Bera, K.: TF+AS-TuA11, 120 

Berdova, M.: TF+NS+EM-ThM10, 163 

Berger, A.: MI+EN+BI-TuA12, 116 

Berger, J.: ET+SS+GR+SP-FrM5, 184 

Bergersen, H.J.: AS+TF+VT-FrM7, 183 

Beringer, D.B.: VT+AS+SS-WeM10, 140; 

VT+AS+SS-WeM6, 140; VT+AS+SS- 

WeM9, 140 

Berke, K.: GR+EM+ET+MS+NS-FrM11, 185 

Berkh, O.: MN+AS-MoM10, 85 

Bernal Ramos, K.: TF+NS+EM-ThM2, 163; 

TF+NS+EM-ThM9, 163 

Bernasconi, M.: EM+TF-WeM12, 133 

Bernholc, J.: SS-WeM4, 138 

Bernson, E.: BI-MoA3, 92 

Berry, N.: TF+AS-WeA2, 151 

Besbes, R.: AC+EN-TuM11, 102 

Besenbacher, F.: BI-MoM11, 83; BI-TuP1, 

125; NS+AS+SS+SP-WeM9, 136 

Besnier, J.-F.: 


MoM3, 83 

Beugin, V.: NM+NS+MS+EM-MoA6, 95 

Beyer, A.: HI+AS+BI+NS-ThM11, 158; 

HI+AS+BI+NS-ThM5, 158; HI-ThP1, 

177 

Bezares, F.J.: GR+AS+BI+PS+SS-WeM9, 

134; GR+EM+ET+NS+TF-MoA1, 94 

Bezarez, F.J.: GR-ThP9, 176 

Bhairamadgi, N.S.: TF+EM+SS-ThA4, 172 

Bhardwaj, C.: BI+AS-TuA8, 113 

Bhat, N.: AS-TuP23, 124 

Bhatt, S.: VT+AS+SS-WeM11, 140 

Bhattacharya, A.: NS+AS+SS+SP-WeM12, 

136 

Bhattacharyya, D.: EM+SS+AS+NS-ThM4, 

155 

Biegalski, M.D.: IS+AS+SS+EN-TuM5, 105 

Bielefeld, J.: EM-TuA1, 114; 

GR+EM+NS+SS+TF-ThA1, 169 

Bielejec, E.: EM-ThP2, 175 

Biener, J.: IS+AS+OX+ET-WeM6, 135; 


Biener, M.: IS+AS+OX+ET-WeM6, 135; 


Bilich, D.: AS-ThA1, 166 

Bilke, L.: EM-ThP15, 175 

Billing, J.M.: AC+EN-TuM5, 102 

Bindl, D.J.: EN+TF-TuA3, 114 

Binek, C.: MI+OX-WeA10, 147 

Bingaman, D.: EW-TuA6, 115 

Bingham, N.: MI+OX-WeA9, 147; 

OX+EM+MI+NS+TF-MoM1, 87 

Biolsi, P.: PS2-TuM1, 108; PS-MoM5, 88; 

PS-ThP16, 178 

Biró, L.P.: AS+TF+VT-FrM3, 183 

Biswal, S.L.: EN+NS-ThM12, 156 

Biswas, A.: MI+SP+AS-ThM3, 159 

Blair, S.L.: BN+AS-WeA3, 143 

Blanch, A.J.: SS+NS-ThA7, 170 

Blanchard, D.L.: AC+EN-TuM5, 102 

Blanchet, P.: PS+BI-MoA11, 96 

Blaze, M.: BI+AS-TuA8, 113 

Blechle, J.M.: PS-ThP19, 178 

Blomfield, C.: EW-TuL4, 111 

Blomfield, C.J.: AS+BI-TuM10, 102; AS+BI- 

TuM3, 102; AS+NS+SS+TF-WeA8, 143; 

AS-ThM1, 155; AS-TuP13, 124; AS- 

TuP14, 124 

Blomquist, J.: SS-MoA11, 98 

Bluhm, H.: EN+SS-FrM5, 184; 

IS+AS+SS+EN-TuM1, 105; 

IS+AS+SS+EN-TuM5, 105; SS-ThA1, 

171 

Bobek, S.: GR-ThP8, 176; SS-WeA1, 150; 

SS-WeM2, 138 

Bockowski, M.: AC+TF+SS+MI-MoA9, 91 

Bockstaller, M.R.: TC+EM+AS-WeA9, 150 

Bodart, P.: PS1-WeA2, 148 

Boden, S.A.: HI+AS+BI+NS-ThM3, 158 

Bodnar, O.: VT-MoA1, 99 

Boineau, F.: VT-MoA1, 99 

Bojorge, C.: TR+SE-WeM4, 140 

Böker, A.: TF+EM+SS-ThA9, 172 

Bol, A.: TF+EN-MoA4, 98 

Boland, J.: HI+AS+BI+NS-ThM9, 158 

Bolotin, I.: EN-ThP3, 175 

189 Author Index

Bolotin, K.I.: GR+EM+ET+NS+TF-MoA3, 

94 

Bolt, R.J.: PS-ThA9, 170 

Bolvardi, H.: SE+NS-MoM8, 88 

Bonnell, D.A.: NS-WeA1, 147; 

SP+AS+BI+ET+MI+TF-WeA3, 149; 

SP+AS+BI+ET+MI+TF-WeA4, 149; 

SS+OX-WeM10, 138 

Bonucci, A.: VT-TuM12, 110 

Bonvalot, M.: OX-TuP2, 127 

Boos, J.B.: EM+TF+OX+GR-MoA10, 93 

Boosalis, A.: LB+EM+GR+MN+TR-WeA10, 

146 

Booth, J.-P.: EN+PS-WeM5, 133 

Bootman, M.: IS-TuP3, 126 

Bora, D.: IS+AS+SS+EN-TuM3, 105 

Borchers, J.: OX+EM+MI+NS+TF-MoM10, 

87 

Bordel, C.: MI+OX-WeA1, 147 

Borgatti, F.: AS-ThA10, 166 

Borgström, M.T.: ET+NS+EM-ThM6, 157 

Boris, D.R.: PS1-TuM12, 107 

Borisov, V.: BI+AS-TuA9, 113 

Borkowski, M.: AC+EN-TuM9, 102 

Borner, K.: EM+TF-WeM5, 133 

Bornschein, L.: VT-TuM11, 110 

Borovsky, B.P.: TR+SE-WeM10, 140; TR- 

TuA10, 121 

Borsa, D.: TC+EM+AS+TF+EN-ThM2, 162 

Borst, C.: EM-ThP8, 175 

Bosch, R.: TC+EM+AS+TF+EN-ThM2, 162 

Bose, S.: OX+EM+MI+NS+TF-MoM10, 87 

Bosnick, K.: NS-ThP2, 178 

Bostwick, A.: GR+EM+ET+NS+TF-MoA8, 

94 

Bøttiger, J.: BI-MoM11, 83 

Boturyn, D.: BI+SS+NS-WeM10, 132 

Bouarouri, A.: PS+BI-MoA10, 96 

Boucher, M.: SS-WeM1, 138 

Bouchoule, S.: AS-MoM4, 82 

Boufnichel, M.: MN+AS-MoM6, 85; PS1- 

ThM3, 160 

Bourgeois, S.: SS+OX-WeM6, 138 

Boutwell, C.: TF+AS-WeA9, 151 

Boutwell, R.C.: TF+AS-WeA7, 151 

Bouxsein, C.: TR+SE-WeM10, 140 

Bowden, M.E.: MI-ThP4, 177; SS+EN+OX- 

ThM11, 161 

Bowman, S.R.: EM+TF+AS-ThA6, 167 

Boxford, W.: AS-ThM1, 155; AS-TuP13, 

124; AS-TuP14, 124 

Boyce, M.C.: EM+TF-WeM11, 133 

Braithwaite, N.St.: PS1-WeA2, 148 

Brant, A.T.: AC+TF+SS+MI-MoA7, 91 

Bratescu, M.A.: GR-ThP7, 176; NS-ThP8, 

178; PS-ThP29, 179 

Braun, A.: IS+AS+SS+EN-TuM3, 105 

Braun, P.V.: EN+NS-ThA1, 168; SE+NS- 

MoA10, 97 

Braunstein, P.: GR+EM+ET+NS+TF-MoA7, 

94 

Bravo-Sanchez, M.: AS-TuP15, 124 

Bray, J.A.: PS-ThA10, 170 

Brehmer, F.: EN+PS-WeM3, 133 

Breitenstein, D.: TF-ThP14, 180 

Breitung, E.: TF-MoM3, 89 

Breitweiser, R.: LB+EM+GR+MN+TR- 

WeA8, 146 

Brennan, B.: EM+TF+OX+GR-MoM5, 84; 

EM-TuM3, 103 

Brenner, D.W.: TF+AS-TuA12, 120; TF+AS- 

TuA7, 120 

Brett, M.J.: TF+SE+NS-WeM11, 139; 

TF+SE+NS-WeM5, 139; TF+SE+NS- 

WeM9, 139 

Brewer, J.R.: EL+TF+AS+EM+SS-TuP1, 125 

Brigg, W.: PS2-MoA6, 97 

Brihoum, M.: PS1-WeA2, 148; PS-ThP5, 

178; PS-ThP7, 178 

Brink, M.: PS1-ThM12, 160 

Brinson, B.: BN+AS-WeA12, 143 

Brocklesby, W.S.: SE+NS-MoA3, 97 

Broitman, E.: TF+NS+EM-ThM12, 163; 

TR+SE-WeM4, 140 

Bronneberg, A.C.: PS2-WeA9, 148 

Brown, A.: BI+SS+NS-WeM2, 132; MN- 

MoA10, 94 

Brown, C.: EN+NS-ThM10, 156 

Brown, R.D.: EM+TF-WeM12, 133 

Browning, R.: AS+TF+VT-FrM6, 183 

Bruce, R.L.: PS-MoM6, 88; PS-WeM10, 137 

Bruchez, M.: IS-TuP3, 126 

Brucker, G.A.: VT-MoA10, 99; VT-TuP2, 

130 

Bruhn, T.: GR+EM+NS+SS+TF-ThA6, 169 

Brukman, M.: SP+AS+BI+ET+MI+TF- 

WeA4, 149 

Brumbach, M.T.: LB+EM+GR+MN+TR- 

WeA1, 146; OX+SS+TF+MI-MoA9, 96 

Brunelle, A.: BN+AS-WeA7, 143 

Bryan, S.R.: AS-ThA3, 166; AS-WeM12, 132 

Bryson, C.: VT-TuP17, 130 

Bsiesy, A.: OX-TuP2, 127 

Buchanan, D.A.: AC+TF+SS+MI-MoA7, 91 

Buchholz, M.: OX+SS+TF+MI-MoA10, 96 

Bucholz, E.W.: TR+BI-TuM10, 110 

Buck, A.: BN+AS-WeA11, 143; IS-TuP4, 

126 

Buecheler, S.: TF+AS-WeA3, 151 

Buechner, B.: GR-ThP3, 176 

Büenfeld, M.: HI+AS+BI+NS-ThM5, 158 

Buegler, M.: EM-ThP5, 175; EM-ThP6, 175 

Bürstel, D.: SS-MoM2, 89 

Büyükköse, S.: NS+SP-MoA9, 95 

Buie, C.: EM+TF+OX+GR-MoA4, 93 

Bull, H.: VT-TuP9, 130 

Bultman, J.E.: TR+SE-WeM1, 140 

Buongiorno-Nardelli, M.: GR-ThP11, 176 

Burak, Ya.V.: AC+TF+SS+MI-MoA7, 91 

Burden, D.: BI+AS-TuA4, 113 

Burghaus, U.: NS+AS+SS+SP-WeM4, 136; 

SS-TuP19, 129; SS-TuP38, 129 

Burkes, D.E.: AC+EN-TuM5, 102 

Burkett, S.L.: MN+AS-MoM5, 85 

Burnham, N.A.: MB+BI-ThM6, 158 

Burris, D.L.: TR+BI-TuM4, 110 

Burst, J.: TF+AS-WeA10, 151 

Bushell, A.: AS-MoM10, 82; AS-TuP10, 124; 

EW-TuL3, 111 

Busse, C.: GR+AS+NS+SP+SS-TuA7, 115 

Butler, W.H.: MI+EN+BI-TuA3, 116 

Butorin, S.M.: AC+MI+SS+TF-MoM5, 82 

Butz, T.: GR+AS+EM+MI+MN-TuM9, 105 

Byrns, B.: SE+PS-TuA3, 118; SE+PS-TuA4, 

118 

Bystrov, K.: PS2-WeA1, 148 

— C — 

Cabrera, W.: EM+TF+OX+GR-MoA6, 93; 


Cabrera-Sanfelix, P.: SS-ThA7, 171 

Cahill, D.G.: SE+NS-MoA10, 97 

Cai, M.: GR+AS+NS+SS-ThM10, 157 

Caillard, L.: EL+TF+BI+AS+EM+SS-MoA2, 

92; EM+NS-FrM3, 183 

Calder, S.: BI+SS+AS-TuM5, 103 

Caldwell, J.D.: GR+AS+BI+PS+SS-WeM9, 

134; GR+EM+ET+NS+TF-MoA1, 94; 

GR-ThP9, 176 

Call, R.: AS+TF+VT-FrM2, 183 

Callahan, C.: EW-TuM8, 104; 


Calliari, L.: GR-ThP3, 176 

Callow, J.A.: BI-TuP16, 125; MB+BI-ThA3, 

169 

Callow, M.E.: BI-TuP16, 125; MB+BI-ThA3, 

169 

Calzolai, L.: BI+SS+AS-TuM12, 103 

Calzolari, A.: GR-ThP11, 176 


Calzolari, D.: NS+EN+GR-TuA1, 117 

Camesano, T.A.: MB+BI-ThM6, 158 

Camillone, N.: NS+AS+SS+SP-WeM12, 136 

Campbell, C.: EN+TF-TuM10, 104 

Campbell, C.T.: SS-TuM12, 109; SS-WeM6, 

138; SS-WeM9, 138 

Campbell, P.: EM+NS-FrM3, 183 

Campbell, P.M.: GR+EM+ET+MS+NS- 

FrM3, 185 

Campbell, S.A.: EN+TF-TuM9, 104; TF- 

ThP10, 180 

Campi, D.: EM+TF-WeM12, 133 

Canavan, H.E.: BI-TuP2, 125 

Candler, R.: MN-TuP7, 126; TF-ThP17, 180 

Canepa, H.: TR+SE-WeM4, 140 

Canepa, P.: EN+AS-ThA7, 167; IS-TuP2, 126 

Cantoro, M.: EM+TF+OX+GR-MoA1, 93 

Cao, J.: PS2-ThM5, 160 

Cao, Y.: EM-ThP1, 175; TF+AS-WeA1, 151 

Carbone, E.A.D.: PS1-WeA7, 148 

Carcia, P.F.: TF-MoM10, 89; TF-WeM3, 139 

Cardinaud, C.: AS-MoM4, 82; PS2-WeA10, 

148 

Carlson, R.P.: MB+BI-ThM4, 158 

Carraro, C.: EN+TF-WeA4, 144 

Carson, J.: AS+NS+SS+TF-WeA10, 143 

Cartas, W.S.: SS-TuP23, 129 

Carter, D.: PS-ThA4, 170; PS-ThA6, 170 

Carter, Z.: EN+TF-WeA3, 144 

Cartier, E.A.: EM+TF+OX+GR-MoA7, 93 

Caruso, F.: BI-MoM1, 83 

Caruso, L.: VT-TuM12, 110 

Casolo, S.: GR+AS+EM+NS+SS-WeA12, 

145 

Caspar, J.: TF+AS-WeA1, 151 

Castner, D.G.: AS+BI-TuA11, 113; AS- 

WeM3, 132; BI+SS+AS-TuM6, 103; 

BN+AS-WeA9, 143; 


Castro, G.R.: AS+TF+VT-FrM5, 183 

Caubet, P.: NM+NS+MS+EM-MoA6, 95 

Cavanagh, A.: TF+EN-MoA3, 98 

Caymax, M.: EM+TF+OX+GR-MoA1, 93; 

IS+AS+OX+ET-WeM9, 135; 

LB+EM+GR+MN+TR-WeA12, 146 

Ceballos-Sanchez, O.: EM+TF+OX+GR- 

MoA9, 93 

Ceccone, G.: BI+SS+AS-TuM12, 103; 

NS+EN+GR-TuA2, 117 

Celiz, A.D.: BI-MoA8, 92 

Chabal, Y.J.: EL+TF+BI+AS+EM+SS- 

MoA2, 92; EM+NS-FrM3, 183; 

EM+TF+OX+GR-MoA6, 93; EM+TF- 

WeM4, 133; EN+AS-ThA7, 167; EN+TF- 

WeA7, 144; GR+AS+BI+PS+SS-WeM2, 

134; GR+AS+EM+NS+SS-WeA1, 145; 

IS-TuP2, 126; NS+SP-MoA7, 95; 

SS+EM-WeA11, 149; SS+EM-WeA9, 

149; SS-TuP21, 129; SS-WeA12, 150; 

TF+AS+SS-ThA3, 171; TF+NS+EM- 

ThM2, 163; TF+NS+EM-ThM9, 163 

Chae, J.: GR+EM+ET+NS+TF-MoA10, 94 

Chagarov, E.: 


WeM6, 137 

Chakradhar, A.: NS+AS+SS+SP-WeM4, 136; 


Chamberlin, S.E.: IS+AS+OX+ET-WeM2, 

135; SS+EN+OX-ThM11, 161 

Chambers, S.: SS+OX-WeM3, 138 

Chambers, S.A.: IS+AS+OX+ET-WeM2, 

135; MI-ThP4, 177; OX-TuP5, 127; 

SS+EN+OX-ThM11, 161; SS+OX- 

WeM5, 138 

Champlain, J.: EM+TF+OX+GR-MoA10, 93 

Chan, C.: TF+AS-WeA1, 151 

Chan, C.K.: VT+AS+SS-WeM1, 140; VT- 

TuA12, 121 

Chan, K.K.: EM+NS-FrM10, 183

Chandra, S.: MI-ThP2, 177; NS-MoM9, 86 

Chang, C.: MB+BI-ThM12, 158 

Chang, C.C.: VT+AS+SS-WeM1, 140; VT- 

TuA12, 121 

Chang, C.S.: GR+EM+ET+NS+TF-MoA6, 

94 

Chang, C.Y.: MN-MoA9, 94 

Chang, H.W.: PS+BI-MoA1, 96 

Chang, H.-Y.: PS-ThP41, 179; PS-ThP42, 

179 

Chang, J.: PS2-TuM6, 108 

Chang, J.P.: EM+TF+AS-ThA3, 167; 

EN+NS-ThA6, 168; EN+NS-ThM6, 156; 

EN+TF-WeA9, 144; PS1-ThM11, 160; 

PS-MoM3, 88; TF+NS+EM-ThM6, 163 

Chang, M.: NM+NS+MS+EM-MoA2, 95 

Chang, M.H.: EM+SS+AS+NS-ThM12, 155 

Chang, W.-T.: HI+AS+NS-WeA8, 146 

Chang, Y.H.: EM+SS+AS+NS-ThM12, 155 

Chanson, R.: AS-MoM4, 82 

Chao, Y.C.: LB+EM+GR+MN+TR-WeA8, 

146 

Chapman, D.: EN+NS-MoM10, 84 

Chapman, R.: EM+TF-WeM4, 133 

Charles, A.: PS-MoM9, 88 

Charrault, E.: TR-TuA4, 121 

Chase, B.: SP+AS+BI+ET+MI+TF-WeA9, 

149 

Chaudhuri, S.: SS-WeA12, 150 

Chauhan, L.: AS-TuP23, 124 

Chaukulkar, R.P.: TF-ThP15, 180 

Chavda, P.M.: VT+AS+SS-WeM11, 140 

Chebiam, R.: EM-TuA12, 114 

Chen, A.: VT-TuA4, 121 

Chen, B.: BN+AS-WeA12, 143 

Chen, C.: VT-TuA12, 121 

Chen, C.C.: EN+SS-FrM5, 184 

Chen, C.L.: VT+AS+SS-WeM1, 140; VT- 

TuA12, 121 

Chen, D.A.: SS-WeA3, 150 

Chen, E.: MI+OX-WeA7, 147 

Chen, F.-Z.: TF-ThP13, 180; VT-TuP5, 130 

Chen, H.: PS2-TuM9, 108 

Chen, H.-P.: TF-ThP13, 180 

Chen, J.: EL+TF+AS+EM+SS+PS+EN+NM- 

MoM4, 83; GR+AS+NS+SP+SS-TuA2, 

115; PS1-ThM11, 160; SS-TuP3, 129; SS- 

WeA9, 150 

Chen, J.-H.: GR+AS+NS+SS-ThM5, 157 

Chen, J.R.: VT+AS+SS-WeM1, 140; VT- 

TuA12, 121 

Chen, L.: EM+TF+OX+GR-MoM8, 84; 

NS+SP-MoA8, 95; PS1-TuM11, 107; 

PS1-WeA12, 148; PS2-MoA10, 97; PS2- 

MoA11, 97; PS2-MoA9, 97; PS-ThP16, 

178; PS-ThP30, 179; TF+SE+NS-WeM4, 

139 

Chen, Q.: PS+BI-MoA8, 96 

Chen, R.: BI-MoM1, 83 

Chen, S.: GR+AS+NS+SP+SS-TuA11, 115; 

PS2-ThM5, 160 

Chen, T.Q.: PS-WeM1, 137; PS-WeM11, 137 

Chen, W.C.: EM-ThP3, 175; TF-ThP7, 180 

Chen, X.: NS-WeA1, 147; TF+EN-MoA6, 98 

Chen, Y.: HI+AS+BI+NS-ThM9, 158 

Chen, Y.C.: MN-MoA9, 94 

Chen, Z.: PS1-TuA10, 117 

Cheng, D.F.: SS-ThM1, 161 

Cheng, D.L.: SS-TuP37, 129 

Cheng, J.: PS1-ThM12, 160; PS-ThP10, 178 

Cheng, M.H.: EN+SS-FrM5, 184 

Cheng, S.-F.: GR+AS+EM+MI+MN-TuM1, 

105 

Cheng, Y.-T.: EN+SS-FrM6, 184; OX-TuP1, 

127 

Chepulskyy, R.: MI+OX-WeA7, 147 

Chernyak, L.: EM-ThP1, 175 

Chesaux, M.: PS-ThA3, 170 

Cheung, W.S.: VT-TuP11, 130; VT-TuP12, 

130; VT-TuP13, 130; VT-TuP14, 130 

Cheyns, D.: AS-ThM6, 155 

Chhowalla, M.: NS+EN+GR-TuA8, 117 

Chiang, S.: NS-ThM6, 159; SS+NS-ThA6, 

170 

Chiba, Y.: PS-ThP1, 178; PS-WeM4, 137 

Chichester, H.J.M.: AC+EN-TuM1, 102 

Chien, D.: EM+TF+AS-ThA3, 167 

Childress, J.R.: EM+MI-ThA8, 166 

Chiou, P.-K.: TF-ThP13, 180 

Chiou, P.W.: PS-ThP22, 179 

Chirita, V.: TF+AS-TuA4, 120; TF+AS- 

TuA9, 120 

Chistyakov, R.: SE+PS-TuM6, 108 

Chitre, K.: OX+SS+TF+MI-MoA6, 96 

Cho, E.: MI-ThP1, 177 

Cho, E.A.: PS-ThP23, 179 

Cho, G.S.: PS+BI-MoA3, 96; PS-ThP38, 179 

Cho, H.J.: MN-TuP6, 126 

Cho, H.K.: NS+EN+GR-TuA11, 117; 

OX+EM+MI+NS+TF-MoM2, 87; TC- 

ThP1, 180 

Cho, J.: EN+NS-ThM6, 156; EN+TF-WeA9, 

144 

Cho, K.J.: GR+AS+EM+NS+SS-WeA1, 145 

Cho, M.L.: MI-ThP5, 177 

Cho, S.C.: PS1-ThM4, 160 

Cho, S.I.: PS2-ThM6, 160 

Cho, S.W.: TC-ThP1, 180 

Cho, T.S.: PS-ThP36, 179; SE+PS-TuM3, 

108; SE+PS-TuM4, 108; 

TC+EM+AS+TF+EN-ThM12, 162 

Choi, B.Y.: SS-ThA7, 171 

Choi, D.: EM-TuA7, 114 

Choi, D.H.: PS2-TuM6, 108 

Choi, E.H.: PS+BI-MoA3, 96; PS-ThP38, 179 

Choi, G.: PS-WeM9, 137 

Choi, G.J.: BI-TuP5, 125 

Choi, J.: GR+EM+ET+NS+TF-MoA7, 94; 

PS2-TuM11, 108; PS-MoM10, 88 

Choi, J.W.: EN+NS-MoM5, 84; PS-ThP23, 

179 

Choi, J.Y.: GR+EM+NS+PS+SS+TF- 

MoM11, 85 

Choi, K.: EM+OX-WeA9, 144; 

EM+TF+OX+GR-MoA7, 93 

Choi, K.R.: EM+TF+OX+GR-MoM8, 84; 

PS-ThP30, 179 

Choi, S.: PS-ThP44, 179 

Choi, S.H.: EM+OX-WeA11, 144 

Choi, S.-H.: MN+AS-MoM8, 85 

Choi, S.-H.: NS-ThP6, 178 

Choi, W.J.: PS-ThP33, 179 

Choi, Y.H.: NS-ThP6, 178 

Choi, Y.J.: EM-TuM4, 103 

Chopra, I.: SS-WeA12, 150 

Chou, C.C.: PS-ThP22, 179 

Chou, L.-W.: NS-WeA11, 147 

Choudhary, K.: PS-ThP11, 178 

Choudhury, F.A.: PS-ThP35, 179 

Christen, H.M.: IS+AS+SS+EN-TuM5, 105 

Christiani, G.: TF+AS-TuA10, 120 

Christophis, C.: BI-TuP14, 125 

Chu, J.-W.: PS+BI-MoA2, 96; PS+BI-MoA6, 

96 

Chuang, Y.: EM-ThM12, 156 

Chumbuni-Torres, K.: 

EL+TF+BI+AS+EM+SS-MoA3, 92 

Chun, S.H.: OX+EM+MI+NS+TF-MoM2, 87 

Chun, Y.S.: EM+TF+OX+GR-MoM8, 84; 

PS1-ThM6, 160; PS-ThP30, 179; TF+AS- 

WeA12, 151 

Chung, B.W.: AC+MI+SS+TF-MoM9, 82 

Chung, J.G.: AS-ThA4, 166; AS-TuP22, 124 

Chung, S.: VT-TuP10, 130; VT-TuP7, 130 

Chung, T.-Y.: PS+BI-MoA2, 96; PS+BI- 

MoA6, 96 

Chupas, P.: IS+AS+SS+EN-TuM9, 105 

Churaman, W.: EM+OX-WeA9, 144 

Chyan, O.: PS-WeM5, 137 

Ciarnelli, V.: BI+SS+NS-WeM12, 132 

Cimpoiasu, E.: GR+AS+NS+SS-ThM3, 157 

Cipriany, B.R.: MN-TuM11, 106 

Cirigliano, N.: EN+NS-ThM6, 156 

Clare, A.S.: BI-TuP16, 125 

Clark, B.D.: TF+MI-WeA3, 151 

Clark, K.: ET+SS+GR+SP-ThA6, 168; 

GR+EM+NS+PS+SS+TF-MoM2, 85 

Clark, M.D.: EN+TF-TuA7, 114 

Clark, T.: BI+AS-TuA4, 113 

Clarke, J.: EM-TuA12, 114 

Claus, R.: TR+BI-TuM1, 110 

Clavel, G.: TF+NS+EM-ThM9, 163 

Clavero, C.: TF+AS+SS-ThA8, 171; 


WeM6, 140 

Clayton, A.: BI-MoM6, 83 

Clendenning, S.: EM-TuA1, 114 

Clergereaux, R.: PS+BI-MoA10, 96 

Cleveland, E.: EM+TF+OX+GR-MoA10, 93; 

NS+EN-TuM2, 107 

Cleveland, J.: EW-TuM8, 104; 


Clifton, P.H.: AS-TuP18, 124 

Coad, B.R.: BI-MoA9, 92 

Coclite, A.M.: TF-WeM5, 139 

Coffey, K.R.: EM-TuA2, 114; EM-TuA7, 114 

Coh, S.: OX+SS+TF+MI-MoA6, 96 

Cohen, H.: ET+SS+GR+SP-FrM3, 184 

Cohen, K.D.: 


WeM5, 137; SS-WeM2, 138 

Cohen, S.A.: EM-TuA8, 114 

Cohen, S.R.: OX+EM+MI+NS+TF-MoM11, 

87 

Coïa, C.: PS1-WeA9, 148 

Colbow, V.: EN+AS-ThA6, 167 

Colburn, M.: PS2-TuM9, 108 

Colby, R.: AS+NS+SS+TF-WeA3, 143; 

AS+NS+SS+TF-WeA4, 143 

Cole, C.: PS-ThP16, 178 

Colesniuc, C.: AS+TF+VT-FrM2, 183 

Colette, S.: PS-ThP32, 179 

Collazo, R.: EM+TF+AS-ThA1, 167 

Collette, S.: PS-ThP31, 179 

Collins, K.: PS2-MoA3, 97 

Collins, R.W.: 


MoM1, 83; 


MoM4, 83 

Colón Santana, J.: GR+EM+ET+NS+TF- 

MoA7, 94 

Colpo, P.: NS+EN+GR-TuA2, 117 

Comes, R.B.: TF+MI-WeA4, 151 

Conard, T.: AS-ThM6, 155; TF-ThP1, 180 

Condon, N.J.: EM+TF+AS-ThA6, 167 

Conklin, D.: NS-WeA1, 147 

Conley, J.F.: EM+OX-WeA12, 144 

Conrad, E.: GR+AS+NS+SP+SS-TuA1, 115 

Constable, E.C.: IS+AS+SS+EN-TuM3, 105 

Conte, A.: VT-TuM12, 110 

Cook, K.: EL+TF+BI+AS+EM+SS-MoA10, 

92 

Cooper, R.: SS-MoM4, 89 

Cooperstein, M.A.: BI-TuP2, 125 

Copel, M.W.: GR+EM+NS+PS+SS+TF- 

MoM8, 85 

Coppée, S.: SE+NS-MoA4, 97 

Coraux, J.: GR+AS+EM+NS+SS-WeA10, 

145 

Corbitt, T.: MB+BI-ThM9, 158 

Corso, M.: 


WeM4, 137 

Cortes, J.P.: MN-MoA6, 94; MN-TuM6, 106 

Cortes, R.: GR+EM+NS+SS+TF-ThA2, 169 

191 Author Index

Cossement, D.: PS1-TuA8, 117 

Côté, C.: PS+TC-WeM1, 136 

Coultas, S.J.: AS+BI-TuM10, 102; AS+BI- 

TuM3, 102; AS+NS+SS+TF-WeA8, 143 

Counsell, J.D.P.: AS+BI-TuM10, 102; 

AS+BI-TuM3, 102 

Coutu, R.: TF-WeM1, 139 

Cowin, J.: IS+AS+BI+ET+GR+NS-TuA12, 

116 

Cozza, I.F.: VT-TuM9, 110 

Craft, S.: EM+TF+AS-ThA1, 167 

Craighead, H.G.: MN-MoA1, 94; MN- 

TuM10, 106; MN-TuM11, 106 

Creatore, M.: 


MoM6, 83; PS1-TuA1, 117; PS2-WeA9, 

148; TC+EM+AS+TF+EN-ThM2, 162 

Croad, O.: BI+SS+AS-TuM1, 103 

Croy, J.R.: SS-TuP27, 129 

Crumlin, E.: IS+AS+SS+EN-TuM5, 105 

Cserny, I.: AS+TF+VT-FrM3, 183 

Csik, A.: AS+TF+VT-FrM3, 183 

Cuddy, M.F.: PS2-WeA7, 148; PS-ThP19, 

178 

Cui, J.B.: PS1-TuA12, 117 

Cui, S.: GR+AS+NS+SP+SS-TuA2, 115; SS- 


Cui, X.: AS+TF+VT-FrM1, 183 

Cui, Y.S.: EM+MI-ThA11, 166 

Culbertson, J.C.: GR+EM+NS+PS+SS+TF- 

MoM3, 85 

Culver, J.: BI+SS+NS-WeM2, 132; MN- 

MoA10, 94 

Cummings, P.T.: TF+AS-TuA1, 120 

Cummings, S.P.: TF+EM+SS-ThA6, 172 

Cumpson, P.J.: AS-MoA1, 91; 


WeM10, 137 

Cunge, G.: PS1-WeA2, 148; PS2-WeA12, 

148; PS-ThP7, 178 

Cunningham, G.B.: EN+NS-MoM11, 84 

Cuomo, J.: SE+PS-TuA3, 118 

Curreli, D.: EN-ThP11, 175 

Curtiss, L.: TF+EN-MoA1, 98 

Cuypers, D.: IS+AS+OX+ET-WeM9, 135 

Cyganik, P.: SS+NS-ThA10, 170; 

TF+AS+SS-ThA2, 171 

Czaplewski, D.A.: MN+AS-MoM3, 85; 

NS+SP-MoA10, 95 

Czarnetzki, U.: EN+PS-WeM12, 133; 

EN+PS-WeM9, 133 

— D — 

Dadap, J.: SS-TuP2, 129 

Dadson, A.E.: TF2-TuA2, 120 

Dahal, A.: GR+AS+EM+NS+SS-WeA8, 145; 


Dähne, M.: EM+TF+AS-ThA10, 167 

Dalberth, M.J.: TF+EM+SS-ThA7, 172; TF- 

WeM1, 139 

Dalmau, R.: EM+TF+AS-ThA1, 167 

Daniels, S.: PS1-TuM3, 107; PS1-TuM9, 107; 

PS1-WeA1, 148; PS1-WeA4, 148 

Darakchieva, V.: AC+TF+SS+MI-MoA9, 91 

Darbal, A.: EM-TuA7, 114 

Darnon, M.: PS1-WeA2, 148 

Darrell, J.W.: PS-ThP21, 179 

Das, S.: BI-TuP11, 125; BI-TuP13, 125; BI- 

TuP3, 125; BI-TuP7, 125; BI-TuP8, 125; 

MN-TuP6, 126 

Dasaka, R.: PS-MoM9, 88 

Dasari, S.: EN-ThP9, 175; SS-MoM10, 89; 

SS-MoM11, 89; SS-TuP16, 129 

Dascier, D.: MB+BI-ThM9, 158 

Datye, A.: SS-TuP27, 129 

Davidson, M.R.: EM-ThP14, 175; NS-WeA2, 

147 

Davies, M.C.: BI+SS+NS-WeM12, 132; BI- 

MoA10, 92; BI-MoA4, 92; BI-MoA8, 92; 

MB+BI-ThM12, 158 

Davis, A.N.: IS+AS+OX+ET-WeM11, 135 

Davis, B.H.: NS-ThM12, 159 

Davis, K.: NM+NS+MS+EM-MoA9, 95 

Davis, R.C.: LB+EM+GR+MN+TR-WeA3, 

146; MN+AS-MoM4, 85; TF2-TuA2, 120 

Davis, R.F.: IS-TuP3, 126 

Davydova, A.: PS2-WeA12, 148 

Dawahre, N.: ET+NS+EM-ThM11, 157; 

NS+EN-TuM3, 107; NS-ThM11, 159 

Dawson, B.: TR+SE-WeM11, 140 

Day, Chr.: VT-TuM4, 110 

Day, D.: BI+AS-TuA4, 113 

De Alba, R.: MN-MoA1, 94 

De Clercq, A.: IS+AS+OX+ET-WeM9, 135 

de Gendt, S.: PS1-ThM2, 160 

De Graeve, I.: SE+PS-TuA9, 118 

De Jesus, J.C.: AS-TuP28, 124 

De la Ree, A.B.: SS-WeM12, 138 

De Luca, F.: TF-WeM5, 139 

de Marneffe, J.-F.: PS1-ThM2, 160 

De Moure-Flores, F.: NS-MoM2, 86; TF- 

ThP16, 180 

De Padova, P.: GR+EM+NS+SS+TF-ThA6, 

169 

de Rooij, M.R.: TR+BI-TuM5, 110 

De Temmerman, G.: PS2-WeA1, 148 

De Vito, E.: EN+NS-ThM11, 156 

De Vos, C.: PS-ThP31, 179 

de Vries, H.: PS+TC-WeM2, 136 

Dean, C.: GR+EM+ET+NS+TF-MoA10, 94 

DeBord, J.D.: AS-ThM5, 155 

Dedkov, Y.: EW-TuL6, 111 

Dekoster, J.: EM+TF+OX+GR-MoA1, 93 

Del Gado, E.: NS+EN+GR-TuA1, 117 

DeLaRiva, A.T.: SS-TuP27, 129 

Delattre, P.A.: EN+PS-WeM5, 133 

Delgadino, G.: PS-WeM12, 137 

Dellinger, A.: MB+BI-ThM2, 158 

Demberger, C.: NM+NS+MS+EM-MoA9, 95 

DeMeo, D.F.: EN+NS-ThA2, 168 

Demers-Carpentier, V.: SS-ThM5, 161 

Demidov, V.: PS-ThP17, 178 

Demko, A.: NS+AS+SS+SP-WeM2, 136 

Demura, K.: PS-ThP6, 178 

Denbeaux, G.: VT-TuP9, 130 

Dendzik, M.: SS+NS-ThA10, 170 

Deng, R.: TF+SE+NS-WeM6, 139 

Deng, X.: SS-ThA8, 171 

Denis, L.: PS1-TuA8, 117 

Denk, M.: SS+OX-WeM12, 138 

Denning, C.: BI-MoA4, 92; BI-MoA8, 92 

Denny, Y.R.: AS-TuP22, 124 

Deram, M.: TR+SE-WeM10, 140 

Desai, T.V.: IS+AS+BI+ET+GR+NS-TuA2, 

116 

Desbief, S.: PS+TC-WeM12, 136 

Deskins, N.A.: SS+EN+OX-ThM9, 161; SS- 

TuM5, 109 

Despiau-Pujo, E.: PS1-WeA2, 148; PS2- 

WeA12, 148 

Desplats, O.: EM+TF+OX+GR-MoA9, 93 

Despont, M.: NS+SP-MoA2, 95 

Desse, F.: IS+AS+OX+ET-WeM11, 135 

Desvoivres, L.: PS2-TuM5, 108; PS-ThP26, 

179 

Detchprohm, T.: EM+TF+AS-ThA7, 167 

Detslefs, B.: GR+AS+NS+SP+SS-TuA9, 115 

Devaraj, A.: AS+NS+SS+TF-WeA3, 143; 

AS+NS+SS+TF-WeA4, 143; HI-ThP2, 

177; NS-ThP13, 178; NS-WeA10, 147; 

OX-TuP6, 127 

Devereaux, T.: EN+SS-FrM5, 184 

DeVore, T.C.: SS-WeM10, 138 

Dewdney, J.: MN-MoA4, 94; NS-MoM9, 86 

Dexter, S.C.: MB+BI-ThA7, 169 

Dezelah, C.L.: EN+TF-WeA10, 144 

Dhakal, T.: EN+TF-WeA12, 144; TF+EN- 

MoA9, 98 

Dhar, N.K.: EM+OX-WeA9, 144 


Dhayal, M.: BI-TuP17, 125; NS-MoM11, 86 

Dhere, N.: EN+TF-TuM11, 104; TF+AS- 

WeA11, 151 

Dhere, R.: EN+AS-ThA1, 167 

D'hers, S.: MN-MoA11, 94 

Dhiman, R.: EM+SS+AS+NS-ThM3, 155; 

EN-ThP5, 175 

Diao, L.: PS2-TuM10, 108 

Diao, Z.: MN+AS-MoM9, 85; MN-TuM5, 

106; MN-TuM9, 106 

Dias, N.K.: TR-TuP7, 130 

Dick, D.: NS+SP-MoA7, 95 

Dickinson, J.E.: SS-TuM4, 109 

Diebold, A.C.: 


MoM9, 83; GR+AS+NS+SP+SS-TuA11, 

115; NM+AS+MS-MoM3, 86 

Diem, M.: AS+NS+SS+TF-WeA11, 143 

Diesing, D.: SS-MoM2, 89; SS-MoM3, 89; 


Dietz, N.: EM+TF+AS-ThA11, 167; 

EM+TF+AS-ThA9, 167; EM-ThP5, 175; 

EM-ThP6, 175 

DiLabio, G.: 


WeM2, 137 

Dimitrakopoulos, C.: GR+AS+NS+SP+SS- 

TuA11, 115 

Ding, G.: PS-ThP10, 178 

Ding, M.: MI+EN+BI-TuA7, 116 

Diniz, J.A.: TF-ThP11, 180 

Diomede, P.: PS2-MoA1, 97 

Dittmann, R.: AS-ThA10, 166 

Divan, R.S.: MI+SP+AS-ThM12, 159; 

MN+AS-MoM5, 85; NS+SP-MoA11, 95 

Diwan, A.: TF-WeM6, 139 

Doerner, R.P.: PS2-WeA1, 148 

Dogan, I.: EN+PS-WeM4, 133 

Dohnalek, Z.: SS+EN+OX-ThM5, 161; SS- 

TuM1, 109 

Dohnalova, K.: EN+PS-WeM4, 133 

Doi, I.: EM-ThP7, 175; TF-ThP11, 180 

Doi, K.: NM-TuP2, 127 

Dolinaj, B.: PS1-WeA1, 148 

Domen, K.: SS+EN+OX-ThM1, 161 

Domenichini, B.: SS+OX-WeM6, 138 

Dominé, D.: PS-ThA3, 170 

Donaldson, S.H.: BI+SS+NS-WeM5, 132 

Donath, M.: MI-WeM1, 135 

Donegan, J.: HI+AS+BI+NS-ThM9, 158 

Dong, C.: NS-ThP14, 178 

Dong, H.: EM+TF+OX+GR-MoM5, 84; EM- 

TuM3, 103 

Dong, Y.: SS-ThM5, 161 

Dongare, A.D.: TF+AS-TuA7, 120 

Donnelly, V.M.: PS1-TuA10, 117; PS2- 

MoA1, 97; PS2-TuA3, 118; PS2-WeA11, 

148; PS-MoM8, 88; PS-ThP18, 178 

Doris, B.: 


MoM9, 83 

Dornstetter, J.-C.: 


MoM3, 83 

Doubina, N.: SS-TuP14, 129 

Doudin, B.: GR+EM+ET+NS+TF-MoA7, 94 

Dougherty, D.B.: GR+AS+BI+PS+SS- 

WeM10, 134; GR+AS+NS+SP+SS- 

TuA11, 115; GR+EM+ET+MS+NS- 

FrM8, 185; GR-ThP11, 176; MI+OX- 

WeA11, 147 

Douglas, E.A.: EM-ThP2, 175 

Dowben, P.A.: AC+TF+SS+MI-MoA1, 91; 

AC+TF+SS+MI-MoA7, 91; 

GR+EM+ET+NS+TF-MoA7, 94; 

MI+OX-WeA10, 147; SS-TuP33, 129 

Downey, B.P.: EM+OX-WeA8, 144 

Dowsett, D.: HI+AS+NS-WeA10, 146

Draper, R.: BI-TuP13, 125; NS+AS+SS+SP- 

WeM2, 136 

Draude, F.: AS-TuP1, 124; BI-TuP12, 125 

Drayman-Weisser, T.: TF-MoM3, 89 

Drews, J.: EM+SS+AS+NS-ThM3, 155 

Driskell, J.D.: TF+SE+NS-WeM12, 139 

Driskill-Smith, A.: MI+OX-WeA7, 147 

Droubay, T.C.: MI-ThP4, 177 

Drube, W.: AS+TF+VT-FrM3, 183 

Dsouza, R.: AS-WeM6, 132 

Du, S.X.: GR-ThP12, 176 

Du, Y.G.: IS+AS+OX+ET-WeM2, 135; OX- 

TuP5, 127; SS-TuM5, 109 

Duan, X.: GR+EM+ET+MS+NS-FrM1, 185 

Dubacheva, G.V.: BI+SS+NS-WeM10, 132 

Dubey, M.D.: GR+EM+ET+MS+NS-FrM8, 

185 

Dubois, P.: PS1-TuA8, 117 

Dubruel, P.: MN+AS-MoM10, 85 

DuChene, J.: EN+SS-FrM4, 184 

Dudis, D.: SE+NS-MoA11, 97 

Dudney, N.: EN+TF-WeA1, 144 

Duenow, J.: TF+AS-WeA10, 151 

Duerig, U.: NS+SP-MoA2, 95 

Dürr, M.: AS-ThM10, 155 

Dufour, T.: PS+TC-WeM12, 136; PS-ThP2, 

178; PS-ThP31, 179 

Dugger, M.T.: LB+EM+GR+MN+TR-WeA1, 

146 

Duke, A.: SS-WeA3, 150 

Dumont, G.: MN-TuP3, 126 

Dunham, B.M.: VT+AS+SS-WeM2, 140; 

VT-TuA11, 121 

Dunin-Borkowski, R.E.: EM-ThM11, 156 

Dunn, B.: EN+NS-ThM6, 156; EN+TF- 

WeA9, 144 

Dunn, S.: PS-ThP16, 178 

Durakiewicz, T.: AC+MI+SS+TF-MoM8, 82 

Durickovic, B.: VT-TuA3, 121; VT-TuP6, 

130 

Durkaya, G.: EM-ThP6, 175 

Durstock, M.F.: EN+NS-ThM9, 156 

Dussarrat, C.: PS-WeM3, 137 

Dussart, R.: MN+AS-MoM6, 85; PS+EM- 

MoM3, 87; PS1-ThM2, 160; PS1-ThM3, 

160 

Dussault, L.: NM+NS+MS+EM-MoA6, 95 

Dutta, M.: EN+AS-ThA6, 167 

Dutta, P.: EN+TF-TuA8, 114 

Duzik, A.: SS-TuP34, 129 

— E — 

Ealet, B.: GR+EM+NS+SS+TF-ThA6, 169 

Eastman, J.A.: IS+AS+OX+ET-WeM3, 135 

Eastman, P.Y.: AS+NS+SS+TF-WeA9, 143 

Easton, C.D.: MB+BI-ThM3, 158 

Ebert, P.: EM+TF+AS-ThA10, 167; EM- 

ThM11, 156 

Economou, D.J.: PS1-TuA10, 117; PS2- 

MoA1, 97; PS2-WeA11, 148; PS-MoM8, 

88; PS-ThP18, 178 

Eddy, Jr., C.R.: EM+OX-WeA8, 144; 

EM+TF+AS-ThA6, 167; 

EM+TF+OX+GR-MoM9, 84; 

GR+AS+BI+PS+SS-WeM9, 134; 

GR+AS+EM+MI+MN-TuM1, 105; 

GR+AS+NS+SP+SS-TuA9, 115; 

GR+EM+ET+MS+NS-FrM3, 185; 



GR+EM+NS+PS+SS+TF-MoM1, 85; 


GR-ThP9, 176; SS+EM-WeA1, 149; 


Eden, J.G.: PS+EM-MoM1, 87 

Ederth, T.: MB+BI-ThA3, 169 

Edgar, J.H.: EM+TF+OX+GR-MoM9, 84 

Edlmayr, V.: SE+NS-MoM9, 88 

Edmonds, M.: AS-TuP21, 124; 


WeM6, 137 

Edwards, P.R.: AC+TF+SS+MI-MoA9, 91 

Egan, T.F.: BN+AS-WeA12, 143 

Eggenspiele, D.: EM+TF-WeM11, 133 

Eigenfeld, N.: TR+SE-WeM10, 140 

Eiliat, H.: TR+SE-WeM6, 140 

Eisele, H.: EM+TF+AS-ThA10, 167 

Eizenberg, M.: LB+EM+GR+MN+TR- 

WeA12, 146 

Ek, S.: SE+NS-MoM10, 88 

Ekinci, Y.: HI+AS+BI+NS-ThM11, 158 

Eklund, P.: VT-TuM5, 110 

Elam, J.W.: IS+AS+SS+EN-TuM9, 105; 

TC+EM+AS+TF+EN-ThM6, 162; 

TF+EN-MoA1, 98 

Eldridge, D.: MB+BI-ThA4, 169 

Elferink, F.H.: PS-ThP15, 178 

El-Khatib, S.: OX+EM+MI+NS+TF-MoM10, 

87 

El-Khoury, P.Z.: SP+AS+BI+ET+MI+NS- 

TuA3, 119 

Ellefson, R.: VT-MoA7, 99 

Eller, M.: AS-ThM5, 155 

Elliman, R.G.: LB+EM+GR+MN+TR-WeA7, 

146 

Ellingsworth, E.: MI+OX-WeA2, 147 

Elliott, S.: TF-TuM3, 109 

Elliston, R.: PS2-TuM10, 108 

Elman, N.M.: MN-MoA11, 94 

Elmquist, R.: LB+EM+GR+MN+TR-WeA10, 

146 

Elswick: EW-TuM7, 104 

Emam, M.: EM-ThM4, 156 

Emery, J.D.: GR+AS+BI+PS+SS-WeM1, 


Endo, K.: EM-ThM1, 156 

Engel, L.: MN+AS-MoM10, 85; MN-MoA8, 

94 

Engelhard, M.: AS-TuP17, 124; TF+AS+SS- 

ThA11, 171 

Engelmann, S.: PS1-ThM12, 160; PS-MoM2, 

88; PS-WeM10, 137 

Engeln, R.: EN+PS-WeM3, 133; PS+TC- 

WeM2, 136 

Engstrom, J.R.: IS+AS+BI+ET+GR+NS- 

TuA2, 116 

Enomoto, T.: PS-ThP16, 178 

Enta, Y.: GR+EM+NS+PS+SS+TF-MoM10, 

85 

Erdemir, A.: TR+BI-TuM9, 110 

Eriguchi, K.: PS2-TuA10, 118; PS2-TuA12, 

118; PS-ThP20, 179 

Erkens, I.J.M.: TF-TuM11, 109 

Ernst, K.-H.: SS-ThM6, 161; SS-TuM9, 109 

Ershov, M.V.: SE+NS-MoA7, 97 

Eryilmaz, O.L.: TR+BI-TuM9, 110 

Escamilla, R.: SS-TuP10, 129 

Espinosa-Magaña, F.: AS-TuP15, 124 

Esquinazi, P.: GR+AS+EM+MI+MN-TuM9, 

105 

Evans, R.A.: BI-MoM1, 83; BI-MoM5, 83 

Everitt, H.O.: NM+AS+MS-MoM5, 86; TF2- 

TuA1, 120 

Ewin, J.J.: TR-TuA9, 121 

Ewing, D.: TF2-TuA11, 120 

Exarhos, A.L.: GR+AS+EM+MI+MN-TuM2, 

105 

Exarhos, S.A.: PS-ThP21, 179 

Eypert, C.: TC-ThP2, 180 

— F — 

Facchetti, A.: TC+EM+AS-WeA1, 150 

Facsko, S.: SE+NS-MoM2, 88 

Fadida, S.: LB+EM+GR+MN+TR-WeA12, 

146 

Fadley, C.S.: MI+EN+BI-TuA11, 116; 

MI+OX-WeA1, 147 

Fager, H.: TF+NS+EM-ThM12, 163 

Faggin, M.F.: NS-ThM9, 159 

Fahey, A.J.: AS+NS+SS+TF-WeA7, 143 

Fairley, N.: AS+BI-TuM12, 102 

Fan, C.-H.: PS-ThP45, 179 

Fan, X.: BI+SS+NS-WeM2, 132; MN- 

MoA10, 94 

Fanelli, F.: PS+TC-WeM5, 136 

Fanz, S.: TF-ThP17, 180 

Faradzhev, N.S.: SS-TuM3, 109 

Farmer, B.L.: GR+AS+BI+PS+SS-WeM6, 

134 

Fartmann, M.: TF+AS+SS-ThA4, 171; TF- 

ThP14, 180 

Faubel, M.: SS-ThA2, 171 

Faulkner, C.C.: HI+AS+BI+NS-ThM9, 158 

Fauzi, M.E.: EN+PS-WeM11, 133; PS2- 

ThM10, 160 

Favia, P.: AS-ThM6, 155 

Fazel, K.: AS-TuP27, 124 

Fearing, R.S.: TR+BI-TuM1, 110 

Fears, K.: BI+AS-TuA4, 113 

Fedchak, J.A.: VT-MoA1, 99; VT-MoM9, 90 

Fedorov, A.: GR-ThP3, 176 

Feenstra, R.: GR+AS+NS+SP+SS-TuA10, 

115 

Feigelson, B.: GR+AS+EM+MI+MN-TuM1, 

105 

Feldman, Y.: NS+AS+SS+SP-WeM4, 136 

Felhofer, J.L.: EL+TF+BI+AS+EM+SS- 

MoA3, 92 

Feliciano, D.M.: EN+NS-MoM6, 84 

Felix, V.: PS+EM-MoM3, 87 

Feng, G.: TF+AS-TuA1, 120 

Feng, X.F.: SS-TuP37, 129 

Feng, X.-L.: MN+AS-MoM1, 85 

Fenineche, N.: AS-TuP25, 124 

Fenter, P.: GR+AS+BI+PS+SS-WeM1, 134 

Ferekides, C.S.: EN+TF-TuM1, 104 

Ferguson, G.S.: EL+TF+BI+AS+EM+SS- 

MoA10, 92 

Ferguson, I.: EM+TF+AS-ThA11, 167; 

EM+TF+AS-ThA9, 167; EM-ThP6, 175 

Ferguson, J.D.: SS+EM-WeA1, 149 

Fernandez, M.-C.: AS-MoM4, 82 

Fernandez-Torre, D.: 


Fernsler, R.: PS1-TuM12, 107; PS-ThP40, 

179 

Ferranti, D.: HI-ThP3, 177 

Ferreira, P.: EM-TuA7, 114 

Ferrighi, L.: SS-ThM5, 161 

Ferris, R.J.: BI+SS+NS-WeM9, 132 

Feurprier, Y.: PS-ThP1, 178; PS-WeM4, 137 

Feygelson, B.N.: GR-ThP9, 176 

Figueroa, J.J.: TF+EM+SS-ThA11, 172 

Filippov, S.V.: SE+NS-MoA7, 97 

Filler, M.: NS+EN-TuM4, 107; NS-WeA11, 

147 

Finlay, J.: BI-TuP16, 125 

Firrincelli, A.: EM+TF+OX+GR-MoA1, 93 

First, P.N.: GR+AS+NS+SP+SS-TuA3, 115 

Fischer, P.: MI+SP+AS-ThM11, 159 

Fisher, E.R.: PS2-WeA7, 148; PS-ThP19, 

178; SE+NS-MoA6, 97 

Fisher, G.L.: AS-WeM12, 132 

Fitzgerald, E.: EM+MI-ThA3, 166 

Fitz-Gerald, J.M.: TF+MI-WeA4, 151 

Fitzmorris, B.C.: TF+SE+NS-WeM3, 139 

Flater, E.E.: TR+SE-WeM10, 140 

Fleetwood, D.M.: EM+SS+AS+NS-ThM11, 

155 

Fleischauer, M.D.: TF+SE+NS-WeM11, 139 

Fleurence, A.: TF+AS-WeA8, 151 

Fleutot, B.: SS-WeA11, 150 

Flitsiyan, E.: EM-ThP1, 175 

Flood, A.: SS-MoA3, 98 

Floreano, L.: SS+OX-WeM6, 138 

Flores, F.: ET+SS+GR+SP-FrM4, 184 

Flores, M.: SS-TuP10, 129; TR-TuP6, 130 

193 Author Index

Flores-Martinez, M.: TR-TuP5, 130 

Floro, J.A.: TF+MI-WeA4, 151 

Foley, E.T.: NS-ThP3, 178 

Folkman, C.M.: IS+AS+OX+ET-WeM3, 135 

Fong, A.: PS-WeM12, 137 

Fong, D.D.: IS+AS+OX+ET-WeM3, 135 

Foreman, J.: NM+AS+MS-MoM5, 86 

Fortunelli, A.: SS+OX-WeM12, 138 

Foss, M.: BI+SS+NS-WeM1, 132; BI- 

MoM11, 83; BI-MoM2, 83; BI-TuP1, 125 

Fouchier, M.: PS-ThP5, 178; PS-ThP7, 178 

Foussekis, M.: EM+TF+AS-ThA4, 167 

Fowlkes, J.D.: NS+SP-MoA4, 95; 

TF+EM+SE+NS-ThM3, 162 

Fox, D.: HI+AS+BI+NS-ThM9, 158 

Fox, J.R.: MN-MoA6, 94; MN-TuM6, 106 

Fox-Lyon, N.: PS2-WeA11, 148 

Fracassi, F.: PS+TC-WeM5, 136 

Fradet, M.: PS1-WeA9, 148 

França, D.: EM-ThP8, 175 

Frank, K.: NS+AS+SS+SP-WeM3, 136 

Frank, M.M.: EM+TF+OX+GR-MoA7, 93 

Franke, E.: PS-MoM1, 88 

Franke, K.J.: 


WeM4, 137 

Franquet, A.: AS-ThM6, 155 

Franssila, S.: TF+NS+EM-ThM10, 163 

Franz, G.: PS1-WeA10, 148 

Franz, R.: SE+PS-TuM10, 108 

Franz, S.: MN-TuP7, 126 

Freeman, M.R.: MN+AS-MoM9, 85; MN- 

TuM5, 106; MN-TuM9, 106 

Freitas, Jr., J.A.: EM+TF+AS-ThA6, 167 

French, B.: EM-TuA9, 114; 


French, M.: GR+EM+NS+SS+TF-ThA1, 169 

Frenkel, A.I.: SS-TuP27, 129 

Frenzer, P.: EM-ThP1, 175; EM-ThP2, 175 

Freund, H.J.: NS-ThM3, 159 

Friddle, P.: PS-MoM1, 88 

Fridmann, J.: LB+EM+GR+MN+TR-WeA7, 

146 

Fritz, E.C.: VT-TuA9, 121 

Froehner, S.C.: BN+AS-WeA9, 143 

Fromm, F.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Fruchart, O.: GR+AS+EM+NS+SS-WeA10, 

145 

Fu, J.: NS+SP-MoA8, 95 

Fu, S.: TC+EM+AS-WeA9, 150 

Fu, T.-Y.: HI+AS+NS-WeA8, 146 

Fuchs, E.: SS-TuP21, 129 

Fuentes, A.: SS-MoA11, 98 

Fuentes-Cabrera, M.: SS-WeM4, 138; 


Fujikawa, Y.: IS+AS+OX+ET-WeM10, 135 

Fujishima, A.: SS-TuP18, 129 

Fujita, D.: HI+AS+BI+NS-ThM12, 158 

Fujita, T.: EN-ThP7, 175 

Fujitani, T.: SS-TuP29, 129; SS-TuP30, 129 

Fukasawa, M.: PS2-ThM4, 160; PS2-TuA9, 

118; PS-ThP14, 178; PS-ThP20, 179 

Fukidome, H.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Fukutani, K.: SS-MoA9, 98; SS-TuP33, 129 

Fukuyama, A.: EN+TF-TuA12, 114 

Fuller, N.C.M.: PS1-ThM12, 160; PS-MoM2, 

88; PS-MoM6, 88; PS-WeM10, 137 

Funk, M.: PS1-TuM11, 107; PS1-WeA12, 

148 

Fuoss, P.H.: IS+AS+OX+ET-WeM3, 135 

— G — 

Gaddam, S.: PS2-WeA8, 148 

Gaddis, R.L.: MB+BI-ThM6, 158 

Gaddy, B.: EM+TF+AS-ThA1, 167 

Gahan, D.: PS1-WeA1, 148 

Gai, Z.: SS-WeM4, 138 

Gajdardziska-Josifovska, M.: 

GR+AS+NS+SP+SS-TuA2, 115; SS- 


Galatage, R.V.: EM-TuM3, 103 

Galatsis, K.: EM+SS+AS+NS-ThM11, 155 

Galhenage, R.P.: SS-WeA3, 150 

Gall, D.: TF+SE+NS-WeM6, 139 

Galla, S.: AS-TuP1, 124 

Galoppini, E.: OX+SS+TF+MI-MoA6, 96 

Galtayries, A.: MB+BI-ThM2, 158 

Galtsyan, E.: EN+TF-TuA8, 114 

Gamage, S.D.: EM+TF+AS-ThA11, 167; 

EM+TF+AS-ThA9, 167; EM-ThP5, 175; 

EM-ThP6, 175 

Gaman, C.: PS1-TuM9, 107 

Gamble, L.J.: BN+AS-WeA4, 143 

Ganesh, K.: EM-TuA7, 114 

Gao, H.-J.: ET+SS+GR+SP-ThA1, 168; GR- 

ThP12, 176 

Gao, J.: SS-WeA10, 150 

Gao, Y.: EN+TF-TuA8, 114; 

GR+EM+ET+NS+TF-MoA10, 94 

Garces, N.Y.: EM+OX-WeA8, 144; 

EM+TF+OX+GR-MoM9, 84; 





Garcia, B.: EW-TuA5, 115 

Garcia, C.D.: EL+TF+BI+AS+EM+SS- 

MoA3, 92 

Garcia, S.: TR+BI-TuM5, 110 

Gardiner, J.: BI-MoM6, 83 

Gargiulo, F.: GR+AS+NS+SS-ThM5, 157 

Garino, T.J.: AS-TuP5, 124 

Garramone, J.: EM+NS-FrM5, 183 

Garren, J.M.: TF+SE+NS-WeM12, 139 

Gartstein, Yu.N.: EL+TF+BI+AS+EM+SS- 

MoA2, 92; EN+TF-WeA7, 144 

Gaskill, D.K.: GR+AS+BI+PS+SS-WeM9, 

134; GR+AS+NS+SP+SS-TuA9, 115; 






GR-ThP9, 176 

Gassilloud, R.: NM+NS+MS+EM-MoA6, 95 

Gates, G.: TF-MoM3, 89 

Gates, S.M.: EM-TuA8, 114 

Gaub, H.E.: 


WeM11, 137 

Gautam, A.: GR+AS+NS+SS-ThM5, 157 

Gazquez, J.: OX+EM+MI+NS+TF-MoM10, 

87 

Ge, Q.: SS-TuM10, 109 

Gebbie, M.A.: BI+SS+NS-WeM5, 132 

Gebhardt, C.R.: AS-ThM10, 155 

Geidel, M.: NM+AS+MS-MoM4, 86 

Geidobler, R.: AS+BI-TuM3, 102 

Geisler, H.: EM-TuA11, 114 

Geisse, N.: EW-TuM8, 104; 


Gellman, A.J.: SS-MoA6, 98; SS-ThM2, 161; 

SS-WeA11, 150 

Gembocki, O.J.: NS+EN-TuM2, 107 

Gemming, S.: SE+NS-MoM2, 88 

Gengler, J.J.: SE-TuP3, 128 

George, S.M.: TF+EN-MoA3, 98; TF2-TuA8, 

120; TF-MoM10, 89 

Gerber, T.: GR+AS+NS+SP+SS-TuA7, 115 

Gessert, T.A.: EN+AS-ThA1, 167; EN+TF- 

MoA1, 93; TF+AS-WeA10, 151 

Ghafoor, N.: TF+NS+EM-ThM11, 163; 


Gherardi, N.: PS+BI-MoA10, 96; PS+BI- 

MoA11, 96; PS+TC-WeM6, 136 


Ghodssi, R.: BI+SS+NS-WeM2, 132; MN- 

MoA10, 94; TR-TuA11, 121 

Ghorai, S.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Ghosh, S.: EM-ThM6, 156 

Giannuzzi, L.A.: AS+BI-TuA10, 113 

Giasson, S.: TR-TuA4, 121 

Gibson, P.: VT-TuA3, 121; VT-TuP6, 130 

Gielesen, W.L.M.: VT-TuA9, 121 

Gierałtowski, A.: EW-WeL5, 142 

Giessibl, FJ.: SP+AS+BI+ET+MI+TF- 

WeA12, 149 

Giewekemeyer, K.: IS-TuP4, 126 

Gil, W.: VT-TuM11, 110 

Gila, B.: LB+EM+GR+MN+TR-WeA7, 146 

Gilles, M.K.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Gilley, K.: TR+SE-WeM5, 140 

Gillich, T.: NS+EN+GR-TuA1, 117 

Gilliland, D.: BI+SS+AS-TuM12, 103 

Gilmore, I.S.: AS-MoA9, 91; AS-ThA2, 166; 

AS-ThM4, 155 

Giner, I.: OX+SS+TF+MI-MoA11, 96 

Ginting, E.: SS-TuP13, 129 

Girard-Lauriault, P.-L.: AS+BI-TuM5, 102 

Girshevitz, O.: OX+EM+MI+NS+TF- 

MoM11, 87 

Gizzo, V.: PS-ThP1, 178 

Gladfelter, W.L.: TF-ThP10, 180 

Glass, J.T.: EN+SS-FrM3, 184 

Glattauer, V.: BI-MoM5, 83; BI-MoM6, 83 

Głazek, W.: EW-WeL5, 142 

Gleason, K.K.: EM+SS+AS+NS-ThM4, 155; 

EM+TF-WeM11, 133; TF-WeM5, 139 

Glück, B.: MN-TuP3, 126 

Go, D.B.: PS+EM-MoM11, 87 

Godoy Filho, J.: EM-ThP7, 175 

Goeke, R.S.: VT-MoM10, 90 

Goertz, M.P.: TF-TuM9, 109 

Gold, J.: BI-MoA3, 92 

Goldman, R.S.: EM+SS+AS+NS-ThM13, 

155 

Goldoni, A.: AC+TF+SS+MI-MoA3, 91 

Goldsman, N.: EM+OX-WeA9, 144 

Goldstein, C.: TF+AS-TuA12, 120 

Golibrzuch, K.: SS-MoM4, 89 

Gollub, S.L.: SS+OX-WeM4, 138; SS-TuP5, 


Gölzhäuser, A.: HI+AS+BI+NS-ThM11, 158; 

HI+AS+BI+NS-ThM5, 158; HI-ThP1, 

177 

Gomella, A.: SE-TuP4, 128 

Gonçalves, A.: AC+TF+SS+MI-MoA6, 91 

Gong, C.: GR+AS+EM+NS+SS-WeA1, 145 

Gong, Q.: IS-TuP2, 126 

Gonon, P.: OX-TuP2, 127; TF+MI-WeA7, 

151 

Gonzalez, C.M.: HI-ThP3, 177 

Gonzalez, I.J.: AS-TuP28, 124 

González-Díaz, J.B.: MI+EN+BI-TuA12, 116 

Gonzalez-Mancera, A.: BI-TuP6, 125 

Gorai, P.: SS+EM-WeA7, 149 

Gorman, B.P.: AS+BI-TuA10, 113 

Gorniak, T.: BN+AS-WeA11, 143; IS-TuP4, 

126 

Gorobey, V.: VT-MoA1, 99 

Gorovikov, S.: AC+TF+SS+MI-MoA3, 91 

Goswami, S.: MB+BI-ThM9, 158 

Gotlib-Vainshtein, K.: OX+EM+MI+NS+TF- 

MoM11, 87 

Goto, M.: MN-TuP5, 126 

Gottscho, R.: PS2-TuM3, 108 

Götzen, J.: SP+AS+BI+ET+MI+NS-TuA10, 

119 

Goubert, G.: SS-ThM5, 161 

Gougousi, T.: TF-ThP9, 180 

Govorkov, A.V.: EM-TuM9, 103 

Gowda, M.H.: GR+AS+EM+MI+MN-TuM1, 

105

Grabowski, K.: AS-TuP27, 124 

Grady, M.: SE+NS-MoA10, 97 

Graef, W.A.A.D.: PS1-WeA7, 148 

Graham, D.J.: BN+AS-WeA9, 143 

Graham, S.: GR+EM+ET+MS+NS-FrM9, 

185; GR-ThP10, 176 

Graham, W.S.: PS1-ThM12, 160; PS-MoM2, 

88 

Grampeix, H.: EM+TF+OX+GR-MoA9, 93; 

NS-ThM10, 159; TF+MI-WeA7, 151 

Granados, B.: TF-TuM6, 109 

Grånäs, E.: GR+AS+NS+SP+SS-TuA7, 115; 


Granier, A.: PS2-WeA10, 148 

Grant, J.T.: SE+PS-TuM9, 108; TF+AS+SS- 

ThA10, 171 

Grant-Jacob, J.A.: SE+NS-MoA3, 97 

Grassian, V.: NM+AS+MS-MoM10, 86 

Grätzel, M.: IS+AS+SS+EN-TuM3, 105 

Graur, I.: MN-TuP1, 126 

Graves, D.B.: PS+BI-MoA2, 96; PS+BI- 

MoA6, 96; PS2-WeA11, 148; PS2- 

WeA12, 148; PS-WeM6, 137 

Gray, A.X.: MI+OX-WeA1, 147 

Greeley, J.: IS+AS+SS+EN-TuM9, 105; 


Green, M.: EW-WeL1, 142 

Greene, A.: EM+TF+OX+GR-MoM3, 84 

Greene, J.E.: TF+AS-TuA4, 120; 


Greer, F.: TF-MoM5, 89 

Gregorkiewicz, T.: EN+PS-WeM4, 133 

Gregory, C.W.: EN+NS-MoM11, 84 

Grehl, T.: TF+AS+SS-ThA4, 171; TF-ThP14, 

180 

Greiner, M.T.: OX+SS+TF+MI-MoA7, 96 

Gretener, C.: TF+AS-WeA3, 151 

Griesser, H.J.: PS+BI-MoA7, 96; PS1-TuA3, 

117 

Griffin, T.M.: PS-ThA10, 170 

Grigoras, K.: TF+NS+EM-ThM10, 163 

Grill, A.: EM-TuA8, 114; 


Grilley, R.: PS-ThA4, 170 

Gross, L.: SP+AS+BI+ET+MI+NS-TuA1, 

119 

Grueneis, A.: GR-ThP3, 176 

Grundmeier, G.: OX+SS+TF+MI-MoA11, 

96; SS-ThA9, 171; TF+AS+SS-ThA1, 

171 

Grunze, M.H.: BI+SS+AS-TuM2, 103; 

BN+AS-WeA11, 143; MB+BI-ThA3, 169 

Gu, L.: IS+AS+OX+ET-WeM5, 135 

Gu, Y.: ET+NS+EM-ThM12, 157 

Guallar-Hoyas, C.: IS+AS+BI+ET+GR+NS- 

TuA3, 116 

Gudimenko, E.: PS1-TuM3, 107 

Guedj, C.: NS-ThM10, 159 

Guerente, L.: BI+SS+NS-WeM10, 132 

Guerrero, J.: EM+TF+OX+GR-MoA9, 93 

Guetschow, P.: VT-TuA3, 121; VT-TuP6, 

130 

Guillorn, M.A.: PS1-ThM12, 160 

Guisinger, N.: SP-TuP2, 128 

Gumuslu, G.: SS-WeA11, 150 

Gunlycke, D.: GR+AS+NS+SS-ThM3, 157; 

GR+AS+NS+SS-ThM4, 157 

Guo, H.X.: HI+AS+BI+NS-ThM12, 158 

Guo, J.H.: GR+EM+ET+NS+TF-MoA11, 94; 


Guo, X.: NS+EN-TuM11, 107 

Guo, Z.-P.: SS-TuP9, 129 

Gupta, A.: AS-ThA7, 166; NS-ThM9, 159 

Gupta, R.: PS-WeM3, 137 

Gupta, S.: AS-TuP23, 124; BI-MoM10, 83; 

TF+EM+SE+NS-ThM4, 162; TF+MI- 

WeA3, 151; TF+SE+NS-WeM10, 139 

Gupta, V.: TF-MoM4, 89 

Gutmann, S.: ET+SS+GR+SP-ThA11, 168 

Guttmann, P.: BP+AS-SuA3, 78 

Gwo, S.: EM+TF+AS-ThA10, 167 

— H — 

Ha, J.: MI-WeM11, 135; MI-WeM2, 135 

Ha, T.: VT-TuP10, 130; VT-TuP7, 130 

Haag, J.: EN+NS-ThM9, 156 

Haas, H.: VT-TuM4, 110 

Haasch, R.T.: TC+EM+AS+TF+EN-ThM6, 

162 

Haase, A.: AS-TuP1, 124 

Haass, M.: PS1-WeA2, 148; PS-MoM6, 88 

Habenicht, B.: GR+AS+EM+NS+SS-WeA11, 

145 

Haberer, D.: GR-ThP3, 176 

Habermann, D.: NM+NS+MS+EM-MoA9, 

95 

Hacker, C.A.: TF+EM+SS-ThA6, 172 

Hackett, J.B.: VT+AS+SS-WeM9, 140 

Hadj Nacer, M.: MN-TuP1, 126 

Hadjipanayis, G.C.: MI-ThP2, 177 

Haehner, G.: 


WeM9, 137 

Hagenhoff, B.: TF+AS+SS-ThA4, 171; TF- 

ThP14, 180 

Hager, G.: AS+NS+SS+TF-WeA7, 143 

Hagiwara, A.: SS-TuP8, 129 

Hahn, D.W.: TR+SE-WeM9, 140 

Hahn, J.H.: BI-TuP5, 125 

Hähner, G.: SP+AS+BI+ET+MI+TF-WeA7, 

149 

Hakanoglu, C.: SS+EN+OX-ThM10, 161; 


Halbur, J.C.: TF2-TuA1, 120; TF-MoM9, 89 

Halevi, B.: IS+AS+SS+EN-TuM6, 105 

Hall, C.J.: PS1-TuA3, 117 

Hall, S.: EN+NS-MoM11, 84 

Halls, M.D.: TF+NS+EM-ThM2, 163 

Hamaguchi, S.: PS1-ThM5, 160; PS2-TuA2, 

118; PS2-TuA4, 118; PS2-TuA9, 118; PS- 

ThP6, 178 

Hamers, R.J.: SS-ThM9, 161 

Hammad, M.: BI-MoA10, 92 

Hammer, B.: SS-ThM5, 161 

Hammond, J.S.: AS-ThA3, 166; AS-WeM12, 

132; EN+AS-ThA4, 167; NS-ThM12, 159 

Han, C.B.: SS-WeM4, 138 

Han, L.: EN+PS-WeM10, 133 

Han, S.M.: EM-ThM12, 156; EM-ThM6, 

156; EN+NS-MoM10, 84 

Han, Y.: SS+NS-TuA11, 119 

Han, Y.G.: PS-ThP38, 179 

Han, Y.-K.: SS-ThM12, 161 

Handa, H.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Hanke, M.: BI-TuP14, 125 

Hänke, T.: EW-TuL6, 111 

Hanley, L.: BI+AS-TuA8, 113; EN-ThP3, 

175 

Hannon, J.B.: GR+EM+NS+PS+SS+TF- 

MoM8, 85 

Hanrahan, B.: TR-TuA11, 121 

Hanrath, T.: EN+NS-MoM5, 84 

Hansen, R.: MN+AS-MoM4, 85 

Hanus, J.: NS+EN+GR-TuA2, 117 

Hao, Y.: GR+AS+NS+SP+SS-TuA11, 115 

Hapala, P.: ET+SS+GR+SP-ThA9, 168; NS- 

MoM5, 86 

Harada, K.: SS-TuP32, 129 

Harada, Y.: GR+AS+EM+NS+SS-WeA12, 

145 

Harari, I.: MN+AS-MoM10, 85 

Harker, M.: LB+EM+GR+MN+TR-WeA3, 

146 

Harl, R.R.: SS+OX-WeM4, 138; SS-TuP5, 


Harrell, W.R.: SS+OX-WeM3, 138 

Harris, K.L.: TR+SE-WeM9, 140 

Harrison, J.A.: TR-TuA8, 121 

Harriss, J.E.: SS+OX-WeM3, 138 

Hartig, M.: PS2-TuM9, 108 

Hasegawa, H.: EM-TuM1, 103 

Hashemian, M.: EN-ThP9, 175; SS-MoM10, 

89; SS-MoM11, 89; SS-TuP16, 129 

Hashimoto, N.: EM+TF+AS-ThA12, 167 

Haspert, L.C.: EN+AS-ThA3, 167 

Hasselbrink, E.: SS-MoM3, 89; SS-TuP24, 


Hassibi, A.: EM+OX-WeA1, 144 

Hatakeyama, R.: PS+BI-MoA8, 96; PS1- 

ThM4, 160 

Hatch, R.C.: MI-WeM1, 135 

Hauge, R.: BN+AS-WeA12, 143 

Havela, L.: AC+TF+SS+MI-MoA6, 91 

Havelund, R.: AS-ThA2, 166; AS-ThM4, 155 

Havercroft, N.: AS-MoA4, 91; AS-ThM11, 

155; AS-WeM11, 132 

Haverkamp, H.: NM+NS+MS+EM-MoA9, 

95 

Hawley, C.J.: NS+EN-TuM6, 107 

Hayashi, H.: SS-TuP33, 129 

Hayashi, T.: PS2-MoA7, 97; PS-ThP25, 179 

Hayashida, M.: HI+AS+BI+NS-ThM6, 158 

Hayat, A.: EN+TF-MoA11, 93 

Haydell, M.: GR+AS+NS+SS-ThM3, 157 

Hayden, B.E.: SS+NS-TuA9, 119 

Hayes, S.L.: AC+EN-TuM1, 102 

Haylock, D.: BI-MoM5, 83 

He, C.: OX+EM+MI+NS+TF-MoM10, 87 

He, G.: GR+AS+NS+SP+SS-TuA10, 115 

He, J.: PS2-TuM11, 108 

He, X.: MI+OX-WeA10, 147 

He, Y.-P.: EN+NS-ThM10, 156 

Heald, S.M.: SS+OX-WeM5, 138 

Hebard, A.F.: GR+EM+ET+MS+NS-FrM11, 

185; LB+EM+GR+MN+TR-WeA7, 146 

Hedrick, J.L.: NS+SP-MoA2, 95 

Heinz, T.F.: GR+AS+EM+MI+MN-TuM5, 

105 

Hell, S.W.: BP+AS-SuA5, 78 

Hellman, F.: MI+OX-WeA1, 147 

Hemminger, J.C.: EN+SS-FrM5, 184; 

SS+NS-TuA3, 119; SS-ThA1, 171; SS- 

ThA2, 171; SS-WeM11, 138; SS-WeM12, 

138; TF+AS-WeA2, 151 

Hemthavy, P.: MN-TuP9, 126 

Henager Jr, C.H.: HI-ThP2, 177 

Henager, C.H.: NS-ThP13, 178 

Henderson, C.: EL+TF+BI+AS+EM+SS- 

MoA6, 92; PS2-MoA8, 97 

Henderson, C.L.: GR+EM+ET+MS+NS- 

FrM9, 185; GR-ThP10, 176 

Henderson, M.A.: EN+SS-FrM2, 184; 

SS+EN+OX-ThM11, 161; SS-TuM5, 109 

Hendricks, J.H.: VT-MoM6, 90 

Hendryx, C.G.: TF-ThP4, 180 

Henry, F.: SE+NS-MoA4, 97 

Henzler, K.: BP+AS-SuA3, 78 

Heo, D.: PS2-TuM11, 108 

Heo, S.: AS-TuP22, 124 

Heo, Y.K.: NS-ThP8, 178 

Herdiech, M.W.: OX+SS+TF+MI-MoA2, 96 

Herman, G.S.: TC+EM+AS+TF+EN-ThM5, 

162 

Herman, J.: EM-ThP8, 175 

Hermkens, P.M.: TF-TuM5, 109 

Hernandez, S.: GR-ThP9, 176 

Hernández, S.C.: GR+AS+BI+PS+SS-WeM9, 

134; GR+EM+NS+PS+SS+TF-MoM1, 85 

Hernandez, S.H.: TF+MI-WeA1, 151 

Hernández-Hernández, A.: NS-MoM2, 86; 

TF-ThP16, 180 

Hernández-Hernández, L.A.: NS-MoM2, 86; 

TF-ThP16, 180 

Herpers, A.: AS-ThA10, 166 

Herrera, V.: BI+SS+NS-WeM6, 132 

195 Author Index

Herrera-Gomez, A.: AS-MoM5, 82; AS- 

TuP15, 124; AS-TuP16, 124; 

EM+TF+OX+GR-MoA9, 93 

Herrero-Albillos, J.: MI+OX-WeA1, 147 

Herring, A.M.: EN+NS-ThM1, 156 

Hersam, M.C.: GR+AS+BI+PS+SS-WeM1, 

134; GR+AS+BI+PS+SS-WeM3, 134; 

GR+AS+NS+SP+SS-TuA9, 115; NS- 

ThP3, 178 

Hershkowitz, N.: PS2-WeA4, 148 

Herzing, A.: AS+BI-TuA9, 113 

Hettiarachchi, C.: EN+NS-MoM6, 84 

Hetzer, D.: PS-ThP16, 178 

Heyde, M.: NS-ThM3, 159 

Heylings, J.: BN+AS-WeA10, 143 

Heyns, M.: EM+TF+OX+GR-MoA1, 93 

Hicks, R.F.: PS+EM-MoM9, 87 

Hiebert, W.K.: MN+AS-MoM9, 85; MN- 

MoA7, 94; MN-TuM5, 106; MN-TuM9, 

106; NS-ThP2, 178 

Highland, M.J.: IS+AS+OX+ET-WeM3, 135 

Hikita, Y.: OX+EM+MI+NS+TF-MoM3, 87 

Hill, R.: PS-ThP34, 179 

Hill, S.B.: SS-TuM3, 109 

Hillhouse, H.W.: EN+TF-MoA3, 93 

HIllion, F.: IS+AS+OX+ET-WeM11, 135 

Hilpert, F.: PS2-TuA1, 118 

Hines, M.: EM-ThP13, 175; NS-ThP12, 178 

Hines, M.A.: NS-ThM9, 159 

Hinkle, C.L.: EM+TF+OX+GR-MoA4, 93; 

EM-TuM3, 103 

Hinkov, V.: TF+AS-TuA10, 120 

Hirakawa, T.: NM-TuP2, 127 

Hiramatsu, M.: GR+AS+NS+SS-ThM9, 157 

Hiramatsu, T.: NM-TuP1, 127; NM-TuP2, 

127; NM-TuP3, 127; TF-ThP12, 180 

Hirano, A.: SE+PS-TuA8, 118 

Hiraoka, K.: AS-ThM12, 155; AS-TuP3, 124; 

AS-TuP6, 124 

Hirayama, H.: SS-MoA8, 98 

Hirsch, B.: SS-MoA3, 98 

Hirschmugl, C.: AS-WeM6, 132; 



Hirvonen, J.: PS+TC-WeM11, 136 

Hisamatsu, H.: VT-TuA1, 121 

Hite, J.K.: EM+TF+AS-ThA6, 167; SS+EM- 

WeA1, 149; TF+NS+EM-ThM1, 163 

Hjort, M.: EM+MI-ThA6, 166; ET+NS+EM- 

ThM6, 157 

Hla, S.-W.: NS-ThM1, 159 

Hlaing, M.M.: MB+BI-ThA4, 169 

Ho, A.: BI-TuP14, 125 

Hobart, K.D.: GR-ThP9, 176 

Hobbs, J.K.: SP+AS+BI+ET+MI+NS-TuA7, 

119 

Hockenbery, D.: BN+AS-WeA4, 143 

Hodes, G.: ET+SS+GR+SP-FrM3, 184 

Hoehne, R.: GR+AS+EM+MI+MN-TuM9, 

105 

Hoertz, P.: EN+SS-FrM3, 184 

Hofer, W.A.: GR-ThP12, 176 

Hoffman, D.: PS-ThA4, 170; PS-ThA6, 170 

Hoffman, R.S.: EN+NS-MoM5, 84 

Hofman, G.L.: AC+EN-TuM1, 102 

Hofmann, P.: MI-WeM1, 135 

Hofmann, T.: LB+EM+GR+MN+TR- 

WeA10, 146 

Hohlbauch, S.: EW-TuM8, 104; 


Hohle, C.: PS2-TuM12, 108 

Holbrook, R.D.: AS+BI-TuA9, 113 

Holland, J.: PS-MoM11, 88 

Hollenstein, Ch.: PS-ThA3, 170 

Hollerweger, R.: SE+NS-MoM6, 88 

Holliday, K.S.: AC+EN-TuM10, 102 

Holloway, P.H.: EM+TF-WeM9, 133; EM- 

ThP14, 175; NS-WeA2, 147 

Holohan, A.: PS1-TuM9, 107 

Holzke, C.: 


WeM5, 137 

Holzner, F.: NS+SP-MoA2, 95 

Honda, M.: PS-ThP12, 178 

Honda, T.: PS-ThP14, 178 

Hone, J.C.: GR+AS+EM+MI+MN-TuM11, 

105; GR+EM+ET+NS+TF-MoA10, 94; 


Hong, J.: TC+EM+AS+TF+EN-ThM12, 162 

Hong, J.-S.: MN+AS-MoM8, 85 

Hong, M.: PS2-ThM1, 160; SS+NS-ThA4, 

170 

Hong, M.S.: VT-TuP7, 130 

Hong, S.: SS+NS-ThA9, 170 

Hong, S.J.: EN-ThP8, 175 

Hong, S.-Y.: SS-TuP2, 129 

Hong, W.T.: IS+AS+SS+EN-TuM5, 105 

Hong, Y.-L.: EM+TF+AS-ThA10, 167 

Hook, A.L.: BI-MoA8, 92; MB+BI-ThM12, 

158 

Hook, D.J.: AS-TuP19, 124 

Hooley, R.: SS-WeM2, 138 

Hopkins, M.B.: PS1-WeA1, 148 

Hopstaken, M.J.P.: EM+NS-FrM10, 183 

Hopwood, J.: PS+EM-MoM5, 87 

Hordagoda, M.: MI+OX-WeA9, 147; 


Hori, M.: GR+AS+NS+SS-ThM9, 157; PS1- 

TuM5, 107; PS2-MoA7, 97; PS2-ThM5, 

160; PS2-TuA7, 118; PS2-WeA3, 148; 

PS-ThP14, 178; PS-ThP25, 179 

Horibe, H.: PS2-TuA7, 118 

Horie, T.: PS2-ThM3, 160 

Horikoshi, R.: SE-TuP2, 128 

Horn, K.: GR+EM+ET+NS+TF-MoA8, 94 

Horowitz, S.B.: MN-MoA6, 94; MN-TuM6, 

106 

Horsfall, A.B.: GR+EM+NS+PS+SS+TF- 

MoM1, 85 

Horvath, B.: VT-MoA10, 99 

Hosadurga, S.: EM-TuA8, 114 

Hosemann, P.: SE+NS-MoM6, 88 

Hoshino, K.: PS-ThP6, 178 

Hoskinson, A.: PS+EM-MoM5, 87 

Hosono, H.: TC+EM+AS+TF+EN-ThM3, 

162 

Hossain, M.Z.: NS+SP-MoA6, 95 

Hossain, T.: EM+TF+OX+GR-MoM9, 84 

Hou, J.B.: SS+NS-TuA11, 119 

Hou, J.-L.: HI+AS+NS-WeA8, 146 

Houssiau, L.: AS-MoA2, 91 

Howe, B.M.: SE+NS-MoA11, 97; 


Howe, J.: GR+EM+NS+PS+SS+TF-MoM3, 

85 

Howling, A.A.: PS-ThA3, 170 

Hozumi, A.: SS-ThM1, 161 

Hsiao, C.-N.: EM-ThP3, 175; IS-TuP1, 126; 

TF-ThP13, 180; VT-TuP5, 130 

Hsieh, C.-H.: PS-ThP45, 179 

Hsieh, C.J.: MN+AS-MoM11, 85 

Hsiung, G.Y.: VT+AS+SS-WeM1, 140; VT- 

TuA12, 121 

Hsu, C.: ET+NS+EM-ThM12, 157 

Hsu, C.C.: PS+BI-MoA1, 96; PS+EM- 

MoM4, 87; PS-ThP22, 179; PS-ThP46, 

179 

Hsu, K.H.: VT-TuA12, 121 

Hsu, K.W.: PS-ThP35, 179 

Hsu, S.N.: VT-TuA12, 121 

Hsueh, H.P.: VT-TuA12, 121 

Hu, J.J.: TR+SE-WeM1, 140 

Hu, L.: TF+EN-MoA6, 98 

Hu, Q.: SP+AS+BI+ET+MI+TF-WeA9, 149 

Hu, S.W.: SS+NS-TuA11, 119; SS-TuP37, 


Hu, W.: EN+PS-WeM11, 133; PS2-ThM10, 

160 


Hu, X.: TF+EN-MoA7, 98 

Hu, Y.: SP+AS+BI+ET+MI+TF-WeA8, 149 

Hu, Y.C.: LB+EM+GR+MN+TR-WeA8, 146 

Hu, Y.F.: AS+TF+VT-FrM1, 183 

Hua, X.: PS2-TuM11, 108 

Huang, C.: NS-ThP2, 178 

Huang, E.: EM-TuA8, 114 

Huang, J.: TF2-TuA9, 120 

Huang, J.-H.: TF-ThP3, 180 

Huang, L.W.: GR+EM+ET+NS+TF-MoA6, 

94 

Huang, M.Y.M.: AS+BI-TuA2, 113 

Huang, Y.M.: AS+BI-TuA4, 113 

Huang, Y.T.: VT-TuA12, 121 

Huaranga, J.A.: TR-TuP4, 130 

Hubault, C.: TF+AS-WeA8, 151 

Hubbard, S.: EN+NS-MoM10, 84 

Hubert, J.: PS+TC-WeM12, 136; PS-ThP2, 

178; PS-ThP31, 179 

Hubler, G.: AS-TuP27, 124 

Hudak, S.: SE+PS-TuA3, 118 

Hudson, E.: PS-WeM12, 137 

Hübner, S.: PS1-WeA7, 148 

Huerta, L.: SS-TuP10, 129; TR-TuP6, 130 

Huffman, C.: PS-ThP34, 179 

Huffman, E.: NS-ThM6, 159 

Hughes, G.J.: AS-TuP23, 124; AS-TuP7, 124; 

EM-TuM5, 103 

Hughes, T.P.: VT-MoM10, 90 

Hughes, W.C.: SS-WeM10, 138 

Hultman, L.: TF+AS-TuA4, 120; TF+AS- 

TuA9, 120; TF+NS+EM-ThM11, 163; 

TF+NS+EM-ThM12, 163; TR+SE- 

WeM4, 140 

Hund, Z.M.: EM+TF-WeM12, 133 

Hung, C.-C.: VT-TuP5, 130 

Hunter, M.: NM+MS-TuM4, 106 

Huo, S.: TR+BI-TuM2, 110 

Huo, Y.J.: BI+AS-TuA10, 113 

Hurley, P.K.: AS-TuP7, 124; EM-TuM5, 103 

Hussein, R.: BI+SS+AS-TuM12, 103 

Hussey, L.: EM+TF+AS-ThA1, 167 

Hutton, S.: EW-TuL4, 111 

Hutton, S.J.: AS+BI-TuM10, 102; AS+BI- 


AS-ThM1, 155; AS-TuP13, 124; AS- 

TuP14, 124 

Hwang, C.: AS+TF+VT-FrM3, 183; MI- 

ThP1, 177 

Hwang, H.H.: AS-TuP2, 124; EN+NS- 

MoM1, 84 

Hwang, I.-S.: HI+AS+NS-WeA8, 146 

Hwang, J.: MI+OX-WeA12, 147 

Hyde, R.H.: MI+OX-WeA9, 147; 


— I — 

Iacobucci, S.: AC+TF+SS+MI-MoA3, 91 

Ianno, N.J.: EL+TF+AS+EM+SS-TuP1, 125 

Ide, T.: GR+EM+NS+PS+SS+TF-MoM10, 

85 

Idigoras, O.: MI+EN+BI-TuA12, 116 

Igarashi, M.: EN+PS-WeM11, 133; PS2- 

ThM10, 160 

Iida, S.: AS+BI-TuM9, 102 

Iijima, T.: HI+AS+BI+NS-ThM6, 158 

Ikari, T.: EN+TF-TuA12, 114 

Ikenaga, N.: EN-ThP12, 175 

Ikezawa, S.: PS1-WeA3, 148 

Ilic, B.: MN-MoA1, 94 

Ilic, B.R.: MN-TuM10, 106; MN-TuM11, 

106 

Iliev, M.N.: PS1-TuA10, 117 

Ilton, E.S.: SS+OX-WeM9, 138 

Im, M.-Y.: MI+SP+AS-ThM11, 159 

Imai, E.: TR-TuP2, 130 

In, S.Y.: VT-TuP14, 130 

Inada, A.: PS-MoM5, 88; PS-ThP1, 178 

Incebacak, M.: EN-ThP13, 175 

Ingram, G.: TF+SE+NS-WeM5, 139

Inose, N.: VT-TuP8, 130 

Iriye, Y.: PS2-ThM9, 160 

Irle, S.: GR-ThP3, 176 

Irving, D.: EM+TF+AS-ThA1, 167; TF+AS- 

TuA12, 120 

Isa, L.: NS+EN+GR-TuA1, 117 

Isaacson, M.: EN+NS-ThM12, 156 

Ishibashi, K.: PS2-MoA11, 97 

Ishibashi, T.: VT-TuA1, 121 

Ishigami, M.: GR+AS+BI+PS+SS-WeM6, 

134; GR+EM+ET+MS+NS-FrM10, 185; 


NS+EN-TuM11, 107; TR+SE-WeM11, 

140 

Ishihara, T.: VT-MoM1, 90 

Ishii, A.: NM-TuP2, 127; NM-TuP3, 127 

Ishii, S.: TF+EM+SS-ThA3, 172 

Ishikawa, K.: GR+AS+NS+SS-ThM9, 157; 

PS1-TuM5, 107; PS2-MoA7, 97; PS2- 

ThM5, 160; PS2-TuA7, 118; PS2-WeA3, 

148; PS-ThP14, 178; PS-ThP25, 179 

Ishikawa, T.: NS+EN-TuM5, 107 

Islam, M.: EN+TF-MoA11, 93 

Islam, M.F.: TC+EM+AS-WeA7, 150 

Ismail-Beigi, S.: OX+EM+MI+NS+TF- 

MoM5, 87; OX+SS+TF+MI-MoA2, 96 

Isobe, M.: PS2-TuA4, 118; PS2-TuA9, 118; 

PS-ThP6, 178 

Israelachvili, J.N.: BI+SS+NS-WeM5, 132; 

TR-TuA4, 121 

Itagaki, N.: EN+NS-MoM2, 84 

Ito, M.: PS2-TuA7, 118 

Ito, T.: PS1-ThM5, 160; PS2-TuA2, 118; 

PS2-TuA9, 118; PS-ThP6, 178 

Itoi, T.: EM+TF+AS-ThA12, 167 

Itou, A.: PS-MoM2, 88; PS-WeM10, 137 

Itzhaik, Y.: ET+SS+GR+SP-FrM3, 184 

Ivanov Boudinov, H.: EM-ThP7, 175 

Ivanov, T.: EM-ThM3, 156 

Ivanova, L.: EM+TF+AS-ThA10, 167 

Iwao, T.: PS2-MoA11, 97 

Iwasaki, T.: PS2-ThM9, 160 

Iwasawa, H.: SS-TuP33, 129 

Iwase, C.: PS2-ThM3, 160 

Izawa, M.: PS-ThA1, 170 

— J — 

Jackson, S.A.: TR+SE-WeM12, 140 

Jacq, S.: PS2-WeA10, 148 

Jadeja, K.A.: VT+AS+SS-WeM11, 140 

Jaehnig, M.: GR+EM+NS+SS+TF-ThA1, 169 

Jain, K.: EW-WeL3, 142 

Jain, R.: EM+TF-WeM6, 133 

Jaiswal, P.: AS-TuP23, 124 

Jakubiak, R.: SE+PS-TuM9, 108; 


Jakubowski, A.: PS2-WeA3, 148 

James, C.D.: ET+NS+EM-ThM10, 157 

Jandhyala, S.: GR+EM+ET+MS+NS-FrM7, 

185 

Jang, J.S.: AS-TuP2, 124; EN+NS-MoM1, 84 

Jang, L.: PS2-TuM9, 108 

Jang, W.C.: EM+OX-WeA7, 144 

Jankovic, V.: EN+NS-ThA6, 168 

Jansen, A.: VT-TuM10, 110 

Janssen, J.P.B.: PS-ThA9, 170 

Javed, M.A.: MB+BI-ThA4, 169 

Jelinek, P.: ET+SS+GR+SP-FrM4, 184; 

ET+SS+GR+SP-ThA9, 168; NS-MoM5, 

86; SP+AS+BI+ET+MI+NS-TuA4, 119 

Jelínek, P.: ET+SS+GR+SP-FrM5, 184 

Jen, S.H.: TF-MoM10, 89 

Jena, D.: GR+AS+NS+SS-ThM11, 157 

Jennings, W.D.: AS-MoA6, 91 

Jensen, B.D.: LB+EM+GR+MN+TR-WeA3, 

146; MN+AS-MoM4, 85 

Jensen, D.S.: TF2-TuA2, 120 

Jeon, H.T.: EM+OX-WeA7, 144; 

NM+NS+MS+EM-MoA7, 95 

Jeon, H.Y.: EM+OX-WeA7, 144; 


Jeon, K.Y.: SE-TuP1, 128 

Jeon, M.H.: PS-ThP24, 179 

Jeon, Y.: PS-ThP44, 179 

Jernigan, G.G.: TF+AS-TuA3, 120 

Jespersen, M.L.: EN+TF-TuA7, 114 

Jesse, S.: SP+AS+BI+ET+MI+NS-TuA12, 

119; SP+AS+BI+ET+MI+TF-WeA1, 149 

Jeurgens, L.P.H.: IS+AS+OX+ET-WeM5, 

135 

Jewell, A.D.: SS-MoA7, 98; SS-TuP1, 129 

Jezewski, C.: EM-TuA12, 114 

Ji, E.: MB+BI-ThM9, 158 

Ji, S.-H.: GR+EM+NS+PS+SS+TF-MoM8, 

85 

Ji, X.: PS2-TuM11, 108 

Jia, Q.: IS+AS+OX+ET-WeM3, 135 

Jian, W.: VT-MoA1, 99 

Jiang, K.: NM+NS+MS+EM-MoA9, 95 

Jiang, N.: NS-ThP3, 178 

Jiang, S.: EM+TF+OX+GR-MoA1, 93 

Jiang, Y.: EM-ThM11, 156 

Jiang, Z.: ET+NS+EM-ThM9, 157 

Jimenez, O.: TR-TuP6, 130 

Jimenez-Aleman, O.: TR-TuP5, 130 

Jobbins, M.M.: IS+AS+OX+ET-WeM1, 135 

Johansson, L.: EM+MI-ThA6, 166 

Johansson, M.P.: TF+NS+EM-ThM11, 163 

Johnsen, R.: VT-TuP4, 130 

Johnson, C.E.: IS+AS+BI+ET+GR+NS- 

TuA7, 116 

Johnson, C.W.: PS1-TuM4, 107 

Johnson, D.J.: PS1-TuM4, 107 

Johnson, E.: EN-ThP5, 175 

Johnson, E.V.: EN+PS-WeM5, 133 

Johnson, J.A.: IS+AS+BI+ET+GR+NS- 

TuA7, 116 

Johnson, J.W.: EM-ThP1, 175 

Johnson, M.: EN+TF-MoA8, 93; EN+TF- 

MoA9, 93; NS+AS+SS+SP-WeM2, 136 

Johnson, M.D.: AS-ThA1, 166 

Johnson, S.D.: GR+AS+EM+MI+MN-TuM1, 

105 

Johnston-Peck, A.: EN+SS-FrM4, 184 

Joly, Y.: SS+OX-WeM5, 138 

Jones, J.G.: SE+PS-TuM9, 108; TF+AS+SS- 

ThA10, 171 

Jones, K.: EW-TuM8, 104; 


Joo, M.H.: EN-ThP4, 175 

Joo, Y.D.: VT-TuP7, 130 

Joo, Y.H.: EM+TF+OX+GR-MoM8, 84; 

PS1-ThM6, 160; PS-ThP30, 179; TF+AS- 

WeA12, 151 

Jordan, K.D.: SS-ThA8, 171 

Jordan, M.B.: MN+AS-MoM5, 85 

Joseph, E.A.: PS1-ThM12, 160; PS-MoM2, 

88; PS-WeM10, 137; TF2-TuA3, 120 

Jouanneau, S.: EN+NS-ThM11, 156 

Joubert, O.: PS1-WeA2, 148; PS-ThP7, 178 

Jousseaume, V.: TF+MI-WeA7, 151 

Jousten, K.: VT-MoA1, 99; VT-MoA7, 99 

Joy, D.: HI+AS+NS-WeA1, 146 

Joy, R.: TC+EM+AS+TF+EN-ThM2, 162 

Ju, H.X.: SS-TuP35, 129 

Judd, A.: BN+AS-WeA10, 143 

Jung, D.W.: LB+EM+GR+MN+TR-WeA4, 

146 

Jung, I.W.: MN-TuM3, 106 

Jung, J.: SS-ThM12, 161 

Jung, R.: PS+BI-MoA3, 96; PS2-TuM1, 108; 

PS2-TuM6, 108; PS2-TuM9, 108; PS- 

MoM5, 88 

Jung, S.: GR+EM+ET+NS+TF-MoA10, 94 

Jung, W.: EM+OX-WeA1, 144; GR-ThP6, 

176 

Jungnickel, H.: AS-TuP1, 124 

Junige, M.: NM+AS+MS-MoM4, 86 

Jupille, J.: SS+OX-WeM6, 138 

Jur, J.S.: TF+NS+EM-ThM5, 163; TF2- 

TuA1, 120; TF2-TuA10, 120; TF-MoM9, 

89; TF-TuM9, 109 

Jurczyk, B.: EN-ThP11, 175 

— K — 

Kabir, A.K.: MI+EN+BI-TuA8, 116 

Kabius, B.C.: MI-ThP4, 177 

Kadavanich, A.: PS2-TuM10, 108; PS- 

ThA11, 170 

Kaganovich, I.D.: PS2-MoA10, 97; PS2- 

MoA9, 97; PS2-WeA4, 148; PS-ThP17, 

178; PS-ThP9, 178 

Kahng, S.-J.: EM+SS+AS+NS-ThM12, 155 

Kaiser, A.M.: MI+OX-WeA1, 147 

Kajiwara, T.: GR+AS+NS+SS-ThM1, 157 

Kakaroglou, A.: SE+PS-TuA9, 118 

Kakekkhani, A.: OX+SS+TF+MI-MoA2, 96 

Kakiuchi, H.: PS+TC-WeM3, 136; SE+PS- 

TuA8, 118 

Kalanyan, B.: EN+NS-ThA1, 168; EN+SS- 

FrM1, 184; EN+SS-FrM3, 184; TF+EN- 

MoA8, 98 

Kalfon-Cohen, E.: OX+EM+MI+NS+TF- 

MoM11, 87 

Kalinin, S.V.: ET+SS+GR+SP-ThA7, 168; 


Kallaher, R.L.: MI-WeM11, 135 

Kalyanaraman, R.: MN-TuP6, 126 

Kam, L.C.: BI-MoM8, 83 

Kamarthy, G.: PS-MoM1, 88; PS-MoM11, 88 

Kamataki, K.: EN+NS-MoM2, 84 

Kambhampati, R.: PS2-TuM6, 108 

Kameshima, Y.: SS-TuP17, 129 

Kamimura, T.: ET+NS+EM-ThM5, 157 

Kamineni, V.: EM-TuA11, 114 

Kamino, T.: NM-TuP3, 127 

Kampen, T.: EW-TuL6, 111 

Kan, H.-C.: TF+EM+SS-ThA10, 172 

Kan, M.R.: MN+AS-MoM9, 85; MN-TuM9, 

106 

Kanakasabapathy, S.: PS2-TuM1, 108; PS2- 

TuM6, 108; PS2-TuM9, 108; PS-MoM1, 

88; PS-MoM5, 88 

Kanazawa, K.: VT-TuA1, 121 

Kanda, T.: GR+AS+NS+SS-ThM9, 157 

Kandel, S.A.: AS-TuP26, 124; 

ET+SS+GR+SP-ThA3, 168; 

IS+AS+OX+ET-WeM1, 135 

Kandratsenka, A.: SS-MoM4, 89 

Kane, G.: VT-TuP9, 130 

Kaneko, T.: PS+BI-MoA8, 96; PS1-ThM4, 

160 

Kanevce, A.: EN+AS-ThA1, 167 

Kang, H.-G.: MN+AS-MoM8, 85 

Kang, H.J.: AS-ThA4, 166; AS-TuP2, 124; 

AS-TuP22, 124 

Kang, H.K.: PS-ThP23, 179 

Kang, J.: NS-ThP4, 178 

Kang, P.S.: NS-ThP6, 178 

Kang, S.H.: PS-ThP28, 179 

Kang, T.S.: EM-ThP1, 175; EM-ThP2, 175 

Kang, X.: PS2-WeA9, 148 

Kanjolia, R.K.: TF+NS+EM-ThM2, 163 

Kanno, Y.: SS-TuP8, 129 

Kant, C.: BI-TuP17, 125; NS-MoM11, 86 

Kanyal, S.: TF2-TuA2, 120 

Kao, P.K.: PS-ThP22, 179 

Karadge, M.: TF-ThP5, 180 

Karahashi, K.: PS1-ThM5, 160; PS2-TuA2, 

118; PS2-TuA9, 118; PS-ThP6, 178 

Karakas, E.: PS-ThP18, 178 

Karakoti, A.S.: AS+BI-TuA12, 113; BI- 

TuP11, 125; EN-ThP10, 175; SS-TuP12, 

129; SS-TuP26, 129 

Kargar, M.: BI-TuP10, 125 

Karim, A.M.: IS+AS+SS+EN-TuM10, 105 

Karmel, H.J.: GR+AS+NS+SP+SS-TuA9, 

115 

197 Author Index

Karp, E.M.: SS-WeM6, 138; SS-WeM9, 138 

Karpov, E.: EN-ThP9, 175; SS-MoM10, 89; 

SS-MoM11, 89; SS-TuP16, 129; SS- 


Karpov, S.Y.: EM-TuM9, 103 

Kasahara, A.: MN-TuP5, 126 

Kashimura, K.: PS2-ThM3, 160 

Kasouit, S.: 


MoM3, 83 

Kaspar, T.C.: IS+AS+OX+ET-WeM2, 135; 

SS+EN+OX-ThM11, 161; SS+OX- 

WeM5, 138 

Kasuya, A.: SS-MoA10, 98 

Kato, H.: NM-TuP1, 127; NM-TuP2, 127; 

NM-TuP3, 127; NS+SP-MoA6, 95; SS- 

MoA10, 98; SS-TuP31, 129; TF-ThP12, 

180 

Kato, T.: SS-TuP18, 129 

Katoch, J.: GR+AS+BI+PS+SS-WeM6, 134; 

GR+EM+ET+NS+TF-MoA2, 94 

Katsunuma, T.: PS-ThP12, 178 

Katz, H.E.: TC+EM+AS-WeA3, 150 

Kaufman Osborn, T.: LB+EM+GR+MN+TR- 

WeA11, 146 

Kaufman-Osborn, T.: EM+TF+OX+GR- 

MoA3, 93 

Kaul, A.: EN+TF-TuM11, 104; TF+AS- 

WeA11, 151 

Kawai, M.: BI+SS+NS-WeM11, 132; 

NS+SP-MoA6, 95; SS-ThM12, 161 

Kawai, Y.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Kawakami, R.: GR+AS+EM+MI+MN- 

TuM3, 105 

Kawamura, M.: TF-ThP2, 180 

Kawasaki, H.: SS-ThA10, 171 

Kawasaki, J.: EM+MI-ThA6, 166 

Kay, B.D.: SS+EN+OX-ThM5, 161; SS- 

ThA3, 171 

Kayani, A.: NS-WeA10, 147; OX-TuP6, 127 

Kayser, S.: AS-MoA4, 91; AS-ThM11, 155; 

AS-WeM11, 132 

Kazi, H.Ur.: PS2-WeA8, 148 

Kean, A.H.: EW-WeL1, 142 

Keavney, D.: MI+SP+AS-ThM12, 159 

Keckes, J.: SE+NS-MoM5, 88 

Kei, C.C.: IS-TuP1, 126 

Keimer, B.: TF+AS-TuA10, 120 

Kelber, J.A.: PS2-WeA8, 148 

Kelkar, U.: TF+AS-TuA11, 120 

Keller, A.: BI-TuP1, 125 

Kelley, M.J.: VT+AS+SS-WeM4, 140 

Kelliher, J.: TF2-TuA11, 120 

Kellogg, G.L.: GR+AS+NS+SP+SS-TuA8, 

115 

Kelly, S.T.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Kelly, T.D.: AC+TF+SS+MI-MoA7, 91 

Kelly, T.F.: AS-TuP18, 124 

Kemper, T.: PS-ThP11, 178 

Kennedy, J.R.: AC+EN-TuM1, 102 

Kenney, J.: PS2-MoA3, 97 

Kent, T.J.: AS-TuP21, 124; 

LB+EM+GR+MN+TR-WeA11, 146; 


WeM6, 137 

Kerestes, C.: EN+NS-MoM10, 84 

Kernert, N.: VT-TuM10, 110 

Kersevan, R.: VT-TuA3, 121; VT-TuP6, 130 

Kershner, R.: EW-TuL2, 111 

Kessels, W.M.M.: 


MoM6, 83; PS2-WeA9, 148; 


TF+EN-MoA4, 98; TF-TuM10, 109; TF- 

TuM11, 109; TF-TuM5, 109 

Keun, S.K.: IS+AS+OX+ET-WeM3, 135 

Keville, B.J.: PS1-TuM10, 107; PS1-TuM9, 

107 

Khan, A.: PS2-TuM11, 108; PS-MoM10, 88 

Khan, M.: EN+TF-MoA11, 93 

Khan, S.S.: SS-WeM12, 138 

Khare, R.: PS2-TuA3, 118 

Khodadadi, B.: MI+OX-WeA2, 147 

Khosla, N.: SS-ThM2, 161 

Khrabrov, A.V.: PS2-MoA10, 97; PS2- 

MoA9, 97 

Khurshid, H.: MI-ThP2, 177; NS-MoM8, 86; 

NS-MoM9, 86 

Khvalkovskiy, A.: MI+OX-WeA7, 147 

Kiantaj, K.: EM+TF+OX+GR-MoA3, 93; 


Kiefer, B.: IS+AS+SS+EN-TuM6, 105 

Kikkawa, J.M.: GR+AS+EM+MI+MN- 

TuM2, 105 

Kikuchi, Y.: PS1-TuA9, 117 

Kilicaslan, A.: PS+TC-WeM1, 136 

Kilpi, L.: TF+NS+EM-ThM10, 163 

Kim, B.: EM-TuA8, 114 

Kim, C.I.: EM+TF+OX+GR-MoM8, 84; PS1- 

ThM6, 160; PS-ThP30, 179; TF+AS- 

WeA12, 151 

Kim, C.K.: PS2-ThM6, 160; PS-ThP43, 179; 

VT-TuP7, 130 

Kim, D.: PS-MoM9, 88 

Kim, D.H.: EN+SS-FrM1, 184; 

NM+NS+MS+EM-MoA8, 95; 

NS+EN+GR-TuA10, 117; TF+EN-MoA8, 

98 

Kim, D.J.: IS+AS+OX+ET-WeM2, 135 

Kim, G.T.: NS-ThP6, 178 

Kim, G.Y.: PS+TC-WeM9, 136; PS-ThP27, 

179 

Kim, H.: EM+SS+AS+NS-ThM12, 155; SS- 

WeM5, 138 

Kim, H.J.: EM+OX-WeA11, 144; EM-TuM4, 

103; NM+NS+MS+EM-MoA7, 95; PS- 

ThP24, 179; TF+AS-WeA12, 151 

Kim, H.S.: EM+TF+OX+GR-MoM8, 84; PS- 

ThP30, 179 

Kim, H.-Y.: EM-ThP1, 175; EM-TuM10, 103 

Kim, J.: EM+TF+OX+GR-MoM6, 84; EM- 

ThP1, 175; EM-TuM10, 103; 

GR+EM+ET+MS+NS-FrM7, 185; TF2- 

TuA9, 120 

Kim, J.H.: EM-ThP12, 175; NS+EN+GR- 

TuA11, 117 

Kim, J.-H.: PS-ThP4, 178 

Kim, J.-H.: PS-ThP42, 179 

Kim, J.K.: EM-TuA8, 114; PS2-ThM6, 160; 

PS-ThP23, 179; PS-ThP43, 179 

Kim, J.S.: NS-ThP6, 178 

Kim, J.-T.: VT-TuP1, 130 

Kim, K.H.: TC+EM+AS-WeA7, 150 

Kim, K.J.: AS-TuP2, 124; EN+NS-MoM1, 84 

Kim, K.N.: PS-ThP24, 179 

Kim, M.: PS2-ThM12, 160 

Kim, M.C.: PS-ThP44, 179 

Kim, M.J.: EM+TF+OX+GR-MoA4, 93 

Kim, M.K.: SS+NS-ThA3, 170 

Kim, P.: GR+EM+ET+NS+TF-MoA10, 94 

Kim, S.: EM+SS+AS+NS-ThM11, 155 

Kim, S.H.: BI-TuP5, 125; EN+TF-TuM12, 

104; PS-ThP33, 179; TR+BI-TuM11, 110 

Kim, S.K.: PS-ThP23, 179 

Kim, S.-K.: MI+SP+AS-ThM11, 159 

Kim, S.M.: ET+NS+EM-ThM11, 157; 

NS+EN-TuM3, 107; NS-ThM11, 159 

Kim, S.N.: GR+AS+BI+PS+SS-WeM6, 134 

Kim, T.: ET+NS+EM-ThM3, 157 

Kim, T.G.: TF-ThP18, 180 

Kim, W.: MI-ThP1, 177; PS-WeM9, 137 

Kim, W.J.: VT-TuP11, 130; VT-TuP12, 130; 

VT-TuP13, 130; VT-TuP14, 130 

Kim, W.K.: EN+TF-TuM10, 104 


Kim, Y.: PS+BI-MoA3, 96; SS-ThM12, 161; 

SS-TuP14, 129; SS-WeM5, 138; TR+BI- 

TuM1, 110 

Kim, Y.-H.: EM+SS+AS+NS-ThM12, 155 

Kim, Y.S.: AC+EN-TuM1, 102 

Kimmel, G.A.: SS+EN+OX-ThM3, 161; 

SS+EN+OX-ThM5, 161; SS-TuM5, 109; 

SS-TuM6, 109 

Kim-Ngan, N.-T.: AC+TF+SS+MI-MoA6, 91 

Kimura, A.: MI-WeM1, 135 

King, S.: EM-TuA9, 114; 


King, S.T.: EM-ThP15, 175 

King, W.: GR+AS+NS+SS-ThM3, 157 

Kingshott, P.: BI+AS-TuA3, 113; BI-MoM6, 

83 

Kinoshita, K.: PS1-ThM9, 160 

Kinoshita, T.: GR+EM+NS+PS+SS+TF- 

MoM10, 85; PS2-ThM4, 160 

Kinross, J.: IS+AS+BI+ET+GR+NS-TuA3, 

116 

Kintaka, H.: PS2-TuM1, 108; PS-MoM5, 88 

Kioussis, D.R.: EM-TuA8, 114 

Kirby, H.F.: TF-ThP4, 180 

Kirchlechner, C.: SE+NS-MoM5, 88 

Kis, A.: GR+EM+NS+SS+TF-ThA10, 169 

Kisielowski, C.: GR+AS+NS+SS-ThM5, 157 

Kjoller, K.: SP+AS+BI+ET+MI+TF-WeA9, 

149 

Kleese-Van Dam, K.: AS+NS+SS+TF- 

WeA10, 143 

Klem, E.J.D.: EN+NS-MoM11, 84 

Klick, M.: PS1-WeA11, 148 

Klimczak, A.: EW-WeL5, 142 

Klingsporn, J.M.: NS-ThP3, 178 

Kloss, F.: BI-MoM11, 83 

Klymko, N.: EM-TuA8, 114 

Knappe, D.: SE+PS-TuA4, 118 

Knauf, J.: TF+EM+SS-ThA9, 172 

Knaut, M.: NM+AS+MS-MoM4, 86 

Knies, D.: AS-TuP27, 124 

Knippenberg, M.T.: TR-TuA8, 121 

Knoll, A.W.: NS+SP-MoA2, 95 

Knoops, H.C.M.: 


MoM6, 83; TC+EM+AS+TF+EN-ThM2, 

162; TF-TuM5, 109 

Knudsen, J.: GR+AS+NS+SP+SS-TuA7, 115; 


Knupfer, M.: GR-ThP3, 176 

Ko, A.: PS-ThP16, 178; PS-ThP34, 179 

Ko, C.G.: PS-ThP23, 179 

Ko, M.K.: VT-TuP13, 130 

Koay, C.: PS2-TuM9, 108 

Kobata, M.: AS-ThA10, 166 

Kobata, T.: VT-MoA4, 99 

Kobayashi, K.: AS-ThA10, 166 

Kobayashi, M.: PS2-TuM6, 108 

Kobayashi, T.: BI+SS+NS-WeM11, 132 

Kobe, H.: TF-ThP12, 180 

Kocon, W.: PS-MoM9, 88 

Koegler, P.: BI-MoM6, 83 

Koel, B.: SS-WeA10, 150 

Koelsch, P.: AS-WeM1, 132; AS-WeM3, 132 

Koenraad, P.M.: SS+EM-WeA3, 149 

Koga, K.: EN+NS-MoM2, 84 

Koh, D.Y.: VT-TuP14, 130 

Koirala, P.: 


MoM4, 83 

Kolind, K.: BI-MoM2, 83 

Kollmer, F.: AS-MoA4, 91; AS-ThM11, 155; 

AS-WeM11, 132 

Kolosko, A.G.: SE+NS-MoA7, 97 

Komachi, J.: PS2-ThM4, 160 

Komarneni, M.: NS+AS+SS+SP-WeM4, 136; 


Kometani, R.: PS2-ThM5, 160 

Komori, F.: GR+AS+NS+SS-ThM1, 157

Kondo, H.: GR+AS+NS+SS-ThM9, 157; 

PS1-TuM5, 107; PS2-MoA7, 97; PS2- 

ThM5, 160; PS2-WeA3, 148; PS-ThP14, 

178 

Kondo, T.: GR+AS+EM+NS+SS-WeA12, 

145 

Kondo, Y.: PS2-MoA7, 97; PS-ThP14, 178 

Kondoh, H.: IS+AS+SS+EN-TuM12, 105 

Kondratyuk, P.: SS-WeA11, 150 

Kong, C.S.: TR+BI-TuM10, 110 

Kong, D.D.: SS-TuM9, 109; SS-TuP37, 129 

Kong, L.: GR+EM+ET+NS+TF-MoA7, 94 

Konicek, A.R.: AS+BI-TuA9, 113 

Konneker, A.: MN+AS-MoM4, 85 

Kono, Y.: BI-TuP15, 125; BN+AS-WeA3, 

143 

Kontic, R.: NS-ThP1, 178 

Kornegay, S.M.: TF+EM+SE+NS-ThM4, 162 

Korolkov, V.: SP+AS+BI+ET+MI+NS- 

TuA9, 119 

Körsgen, M.: AS-TuP1, 124 

Koshihara, S.: NS+EN-TuM5, 107 

Koshy, R.: PS-ThP1, 178; PS-WeM1, 137; 

PS-WeM4, 137 

Koskey, S.: PS-WeM5, 137 

Koskinen, J.: TF+NS+EM-ThM10, 163 

Koster, N.B.: HI+AS+NS-WeA9, 146; PS- 

ThA9, 170; PS-ThP15, 178; VT-TuA7, 

121 

Kostov, K.: LB+EM+GR+MN+TR-WeA9, 

146 

Kotru, S.: EN+TF-WeA11, 144 

Kotsugi, M.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Kotula, P.G.: AS-TuP5, 124 

Kourkoutis, L.F.: OX+EM+MI+NS+TF- 

MoM8, 87 

Kövér, L.: AS+TF+VT-FrM3, 183 

Kowalik, J.: GR+EM+ET+MS+NS-FrM9, 

185; GR-ThP10, 176 

Kozhanov, A.: EM+MI-ThA10, 166 

Kozhukhova, E.A.: EM-TuM9, 103 

Kozhushner, M.: ET+SS+GR+SP-ThA4, 168 

Krafcik, J.: NS+EN-TuM3, 107 

Kraft, D.C.E.: BI+SS+NS-WeM1, 132; BI- 

MoM11, 83; BI-MoM2, 83; BI-TuP1, 125 

Kranz, L.: TF+AS-WeA3, 151 

Krause, M.: SE+NS-MoM2, 88 

Kravchenko, I.I.: EM-TuA2, 114 

Kreil, J.: MI+OX-WeA2, 147 

Krejci, O.: ET+SS+GR+SP-ThA9, 168 

Krick, B.A.: TR+SE-WeM9, 140; TR-TuA3, 

121; TR-TuA9, 121 

Krim, J.: TR-TuA12, 121 

Krishnan, R.: EN+TF-TuM10, 104 

Krist, B.: EM-TuA12, 114 

Kristensen, P.K.: EN-ThP5, 175 

Kristiansen, K.: TR-TuA4, 121 

Kroemker, B.: GR+AS+NS+SP+SS-TuA1, 

115 

Kröger, M.: NS+EN+GR-TuA1, 117 

Kroll, U.: PS-ThA3, 170 

Krommenhoek, P.J.: TF2-TuA1, 120 

Kronast, F.: MI+OX-WeA1, 147 

Kropman, D.J.: AS-TuP8, 124 

Krounbi, M.: MI+OX-WeA7, 147 

Krstev, I.: PS1-WeA10, 148 

Krueger, B.: TC+EM+AS+TF+EN-ThM11, 

162 

Krueger, J.: EM-ThP15, 175 

Krüger, P.: MI-WeM1, 135 

Krueger, P.: SS+OX-WeM6, 138 

Krylov, S.: MN+AS-MoM10, 85; MN-MoA8, 

94 

Ku, J.H.: EM-TuM4, 103 

Kuang, Z.: GR+AS+BI+PS+SS-WeM6, 134 

Kub, F.J.: EM+TF+AS-ThA6, 167; 

GR+AS+EM+MI+MN-TuM1, 105; GR- 

ThP9, 176 

Kubetzka, A.: NS-ThM1, 159 

Kuboi, N.: PS2-ThM4, 160 

Kubota, T.: MN-TuP4, 126; PS2-ThM11, 

160; PS2-ThM9, 160; PS-MoM6, 88 

Kuchibhatla, S.V.N.T.: AS+BI-TuA12, 113 

Kuciauskas, D.: EN+AS-ThA1, 167 

Kucukgok, B.: EM+TF+AS-ThA9, 167 

Kuemin, C.: NS+SP-MoA2, 95 

Kuhn, M.: GR+EM+NS+SS+TF-ThA1, 169 

Kuhness, D.: SS+OX-WeM12, 138 

Kujofsa, T.M.: EM+MI-ThA1, 166 

Kuk, Y.: MI-WeM11, 135; MI-WeM2, 135 

Kulkarni, D.: SS-TuP36, 129 

Kulkarni, P.: BI-TuP7, 125 

Kulsreshath, M.: PS+EM-MoM3, 87 

Kumar, A.: BI-TuP11, 125; BI-TuP3, 125; 

EL+TF+BI+AS+EM+SS-MoA8, 92; MN- 

TuP6, 126; PS+EM-MoM8, 87 

Kumar, K.: PS2-TuM1, 108; PS-MoM5, 88; 

PS-ThP1, 178; PS-ThP16, 178; PS- 

WeM4, 137 

Kumar, S.: EL+TF+BI+AS+EM+SS-MoA8, 

92 

Kummel, A.C.: AS-TuP21, 124; BI+SS+NS- 

WeM6, 132; BI-TuP15, 125; BN+AS- 

WeA3, 143; EM+TF+OX+GR-MoA3, 93; 

LB+EM+GR+MN+TR-WeA11, 146; 


WeM6, 137; SS-ThM11, 161 

Kung, M.: TF+EN-MoA1, 98 

Kung, P.: ET+NS+EM-ThM11, 157; NS+EN- 

TuM3, 107; NS-ThM11, 159 

Kungas, R.: SP+AS+BI+ET+MI+TF-WeA3, 

149 

Kunze, C.: SS-ThA9, 171 

Kuo, H.-S.: HI+AS+NS-WeA8, 146 

Kusakabe, K.: EM+TF+AS-ThA12, 167 

Kushner, M.J.: PS2-TuA11, 118 

Kusova, K.: NS-MoM5, 86 

Kutlu, B.: EN-ThP13, 175 

Kuwahara, K.: TF-ThP6, 180 

Kwan, J.K.: MN-MoA7, 94 

Kwon, G.: PS+BI-MoA3, 96 

Kwon, H.C.: VT-TuP7, 130 

Kwon, J.: TF+NS+EM-ThM2, 163 

Kwon, T.: PS2-TuM6, 108 

Kwon, Y.H.: OX+EM+MI+NS+TF-MoM2, 

87 

Kwon, Y.J.: TF+AS-WeA2, 151 

Kyoung, Y.K.: AS+BI-TuM9, 102; AS-ThA4, 

166 

Kyriakou, G.: SS-MoA7, 98; SS-TuP1, 129; 

SS-WeM1, 138 

Kysar, J.W.: MN-MoA3, 94 

— L — 

Labbé, P.: BI+SS+NS-WeM10, 132 

LaBella, V.P.: EM+NS-FrM5, 183; 

ET+SS+GR+SP-FrM6, 184; 


Labelle, C.: PS-ThP1, 178; PS-WeM1, 137 

Labonte, A.P.: PS-WeM1, 137; PS-WeM11, 

137 

Laboutin, O.: EM-ThP1, 175 

Lacovig, P.: LB+EM+GR+MN+TR-WeA9, 

146 

Ladroue, J.: MN+AS-MoM6, 85; PS1-ThM3, 

160 

Laera, S.: BI+SS+AS-TuM12, 103 

LaForge, J.M.: TF+SE+NS-WeM5, 139; 

TF+SE+NS-WeM9, 139 

LaGoo, L.: AS+BI-TuM4, 102 

Lahiri, J.: GR+EM+NS+SS+TF-ThA2, 169 

Lalany, A.: TF+SE+NS-WeM11, 139 

Lam, J.C.K.: AS+BI-TuA2, 113; AS+BI- 

TuA4, 113 

Lam, K.: EM-ThM5, 156 

Lampen, P.: NS-MoM8, 86 

Lanceros-Méndez, S.: BI+AS-TuA7, 113 

Landrock, S.: EM-ThM11, 156 

Landt, L.: AS+TF+VT-FrM2, 183 

Lane, B.G.: PS1-TuM11, 107; PS1-WeA12, 

148 

Langenkämper, Ch.: MI-WeM1, 135 

Langer, R.: BI-MoA10, 92; BI-MoA4, 92; BI- 

MoA8, 92; MB+BI-ThM12, 158 

Langfitt, Q.: OX-TuP6, 127 

Larciprete, R.: LB+EM+GR+MN+TR-WeA9, 

146 

Laroussi, M.: SE+PS-TuA1, 118 

Larsen, G.K.: TF+SE+NS-WeM3, 139 

Larson, D.J.: AS-TuP18, 124 

Lashley, J.C.: EM+NS-FrM11, 183 

Laskin, A.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Laskin, J.: AS+NS+SS+TF-WeA10, 143 

Laskoski, M.: GR-ThP9, 176 

Lass, S.: EW-WeM8, 134 

Latrous, H.: AC+EN-TuM11, 102 

Latu-Romain, L.: TF+MI-WeA7, 151 

Lau, K.S.: EN+TF-WeA3, 144 

Lauer, I.: EM+NS-FrM10, 183 

Lauhon, L.J.: ET+NS+EM-ThM1, 157 

Lauter, V.: MI+OX-WeA12, 147 

Laver, M.: OX+EM+MI+NS+TF-MoM10, 87 

Lavoie, C.: EM+NS-FrM7, 183; EM+NS- 

FrM9, 183 

Law, M.: EN+TF-MoA6, 93; TF+AS-WeA2, 

151 

Lawrence, D.: AS-TuP18, 124 

Lawton, T.: SS-WeM1, 138 

Lazovsky, D.: NM+MS-TuM9, 106 

Lazzaroni, R.: PS+TC-WeM12, 136; SE+NS- 

MoA4, 97 

Le Brizoual, L.: PS2-WeA10, 148 

Le Lay, G.: GR+EM+NS+SS+TF-ThA6, 169 

Le, D.: GR+EM+ET+MS+NS-FrM3, 185; 

GR+EM+ET+NS+TF-MoA2, 94; GR- 

ThP8, 176; NS+EN+GR-TuA7, 117; SS- 

WeA1, 150 

Le, M.: PS-ThP10, 178 

Le, N.B.: GR-ThP4, 176 

Lea, A.S.: NS-ThM2, 159 

LeBeau, J.: EM+TF+AS-ThA1, 167 

LeClair, P.R.: MI+OX-WeA12, 147 

Lecordier, L.: TF+EM+SS-ThA7, 172; TF- 

WeM1, 139 

Lee, A.J.: NS+SP-MoA1, 95 

Lee, B.H.: TF-MoM10, 89 

Lee, B.-J.: AS-ThM10, 155 

Lee, B.O.: PS-ThP23, 179 

Lee, C.: PS2-TuM10, 108 

Lee, C.-M.: GR+EM+ET+NS+TF-MoA7, 94 

Lee, C.T.: EM-ThP3, 175; TF-ThP7, 180 

Lee, D.H.: TR+BI-TuM1, 110 

Lee, D.Y.: IS+AS+OX+ET-WeM1, 135 

Lee, G.: PS+BI-MoA3, 96 

Lee, H.I.: AS-ThA4, 166 

Lee, H.S.: PS-ThP29, 179 

Lee, I.: TC+EM+AS-WeA7, 150 

Lee, J.: GR-ThP6, 176; PS-WeM6, 137; 

SP+AS+BI+ET+MI+NS-TuA3, 119; SS- 

ThA8, 171 

Lee, J.C.: AS+BI-TuM9, 102; AS-ThA4, 166; 

AS-TuP22, 124 

Lee, J.H.: EN+TF-TuM12, 104; MI-ThP5, 

177; OX+EM+MI+NS+TF-MoM2, 87 

Lee, J.M.: EN-ThP4, 175 

Lee, J.R.I.: AS+TF+VT-FrM2, 183; 


Lee, J.S.: EM+OX-WeA7, 144; 

EM+TF+OX+GR-MoA3, 93; MB+BI- 

ThA1, 169; NM+NS+MS+EM-MoA7, 95 

Lee, J.-W.: PS-ThP41, 179 

Lee, J.Y.: OX+EM+MI+NS+TF-MoM2, 87; 

PS2-ThM12, 160; SE-TuP1, 128 

Lee, K.I.: AS-TuP22, 124 

Lee, K.M.: NS+EN+GR-TuA10, 117; 


199 Author Index

Lee, K.-M.: GR+EM+ET+MS+NS-FrM3, 

185 

Lee, K.W.: PS-ThP23, 179 

Lee, M.: TF2-TuA9, 120 

Lee, N.I.: EM-TuM4, 103 

Lee, S.B.: EN+AS-ThA3, 167 

Lee, S.H.: EM-TuM4, 103 

Lee, S.Y.: AS-TuP22, 124 

Lee, T.G.: BI-TuP5, 125 

Lee, T.H.: EM-TuA8, 114 

Lee, T.Y.: VT+AS+SS-WeM1, 140 

Lee, W.J.: BI-TuP5, 125 

Lee, W.K.: GR+AS+NS+SS-ThM3, 157; GR- 

ThP9, 176 

Lee, W.Y.: PS-ThP38, 179 

Lee, Y.: TF2-TuA8, 120 

Lee, Y.H.: EN+TF-TuM12, 104 

Lee, Y.K.: SS-MoM1, 89 

Lee, Y.S.: PS-ThP23, 179 

Leever, B.J.: EN+TF-TuA7, 114 

Lefaucheux, P.: MN+AS-MoM6, 85; 

PS+EM-MoM3, 87; PS1-ThM2, 160; 

PS1-ThM3, 160 

Legget, G.J.: NS+SP-MoA1, 95 

Leggett, G.J.: TF+EM+SS-ThA1, 172 

Lei, Y.: IS+AS+SS+EN-TuM9, 105 

Leick, N.: 


MoM6, 83; TF-TuM10, 109 

Leick-Marius, N.: TF+EN-MoA4, 98 

Leidy, C.: BI-TuP6, 125 

Leighton, C.: EN+TF-MoA8, 93; EN+TF- 

MoA9, 93; OX+EM+MI+NS+TF- 

MoM10, 87 

Leinweber, C.: BI-TuP14, 125 

Leitner, D.: VT-TuA3, 121; VT-TuP6, 130 

Leitner, M.: VT-TuA3, 121; VT-TuP6, 130 

Lemaitre, M.: LB+EM+GR+MN+TR-WeA7, 

146 

Lemay, J.-C.: SS-ThM5, 161 

Lenahan, P.: EM-TuM11, 103 

Lenox, C.: PS-MoM8, 88 

Lenz, A.: EM+TF+AS-ThA10, 167 

Leonhardt, D.: EM-ThM12, 156 

Leou, K.-C.: PS-ThP45, 179 

Leroux, C.: NM+NS+MS+EM-MoA6, 95 

Leroy, P.: PS-ThP32, 179 

Letofsky-Papst, I.: SE+NS-MoM9, 88 

Levasseur, O.: PS+BI-MoA10, 96; PS+BI- 

MoA11, 96; PS+TC-WeM1, 136; PS+TC- 

WeM6, 136 

Levy, N.: MI-WeM11, 135; MI-WeM2, 135 

Lewin, E.: SE+PS-TuM5, 108 

Lewis, E.A.: SS-WeA2, 150 

Lewis, E.K.: BN+AS-WeA12, 143 

Lewis, J.: EN+NS-MoM11, 84 

Lewis, N.S.: EM+TF-WeM12, 133 

Lewis, T.: SS-ThA2, 171 

Li, A.-P.: ET+NS+EM-ThM3, 157; 

ET+NS+EM-ThM4, 157; 



Li, C.: TC+EM+AS-WeA4, 150 

Li, D.S.: AS+NS+SS+TF-WeA10, 143 

Li, J.: EN+AS-ThA7, 167; IS-TuP2, 126 

Li, J.B.: TC+EM+AS-WeA4, 150 

Li, K.: NS+SP-MoA8, 95 

Li, L.: NS-ThP4, 178 

Li, L.J.: LB+EM+GR+MN+TR-WeA8, 146 

Li, Q.: EM-ThM12, 156; 

SP+AS+BI+ET+MI+NS-TuA12, 119; SS- 

WeM4, 138 

Li, S.: TF+AS-TuA1, 120 

Li, W.: MI-ThP2, 177; TF-ThP17, 180 

Li, W.Y.: PS-ThA10, 170 

Li, X.D.: ET+NS+EM-ThM4, 157 

Li, Y.: SS-TuP9, 129; VT+AS+SS-WeM2, 

140; VT-TuA11, 121 

Li, Z.: ET+SS+GR+SP-ThA11, 168; 

SS+EN+OX-ThM5, 161; SS+NS-TuA4, 

119; VT+AS+SS-WeM10, 140; 

VT+AS+SS-WeM6, 140 

Li, Z.S.: EM+NS-FrM4, 183; 

EM+SS+AS+NS-ThM3, 155 

Lian, T.: EN+NS-MoM8, 84 

Liang, C.-K.: AS-ThM5, 155 

Liang, T.: EN+SS-FrM6, 184; 

OX+SS+TF+MI-MoA1, 96; OX-TuP1, 

127; OX-TuP3, 127 

Liang, Y.: PS1-WeA3, 148 

Liang, Z.: SS-WeM5, 138 

Liao, B.-H.: EN-ThP2, 175; TF-ThP13, 180 

Liao, Y.C.: PS+EM-MoM4, 87 

Libera, J.A.: TC+EM+AS+TF+EN-ThM6, 

162 

Liberman, A.: BN+AS-WeA3, 143 

LiCausi, N.: EM-TuA11, 114 

Lichtenstein, L.: NS-ThM3, 159 

Licitra, C.: NS-ThM10, 159 

Liddiard, S.: LB+EM+GR+MN+TR-WeA3, 

146 

Liddle, J.A.: NM+AS+MS-MoM1, 86 

Lie, F.: PS2-TuM9, 108 

Liedberg, B.: MB+BI-ThA3, 169 

Lien, S.-E.: PS-ThP45, 179 

Ligot, S.: PS1-TuA8, 117 

Lii, T.: PS-MoM8, 88 

Lilly, M.: TF2-TuA11, 120 

Lim, D.: TF+EM+SS-ThA11, 172 

Lim, H.J.: EM-TuM4, 103 

Lim, J.T.: ET-ThP1, 176 

Lim, J.Y.: VT-TuP11, 130; VT-TuP12, 130; 

VT-TuP13, 130; VT-TuP14, 130 

Lim, W.: EM-TuM9, 103 

Lim, W.S.: PS-ThP23, 179 

Lima, L.P.B.: TF-ThP11, 180 

Limanto, F.: TR+BI-TuM1, 110 

Lin, C.-F.: TF+EM+SS-ThA10, 172 

Lin, C.-P.: VT-TuP5, 130 

Lin, C.-Y.: HI+AS+NS-WeA8, 146 

Lin, D.: LB+EM+GR+MN+TR-WeA12, 146 

Lin, F.-Y.: TR+BI-TuM10, 110; TR-TuP1, 

130 

Lin, G.: AS+NS+SS+TF-WeA10, 143 

Lin, J.H.: AS-TuP7, 124; EM-TuM5, 103 

Lin, J.M.: AS-TuP20, 124 

Lin, K.C.: LB+EM+GR+MN+TR-WeA8, 146 

Lin, M.Y.: BI-TuP4, 125; GR-ThP2, 176; NS- 

ThP7, 178 

Lin, P.A.: PS+EM-MoM8, 87 

Lin, Q.: EM-TuA10, 114; PS2-TuM6, 108 

Lin, S.: AS-TuP17, 124; 

GR+EM+ET+MS+NS-FrM3, 185 

Lin, W.Z.: SP+AS+BI+ET+MI+NS-TuA12, 

119 

Lin, X.: SS+EN+OX-ThM5, 161 

lin, Y.: TF-ThP17, 180 

Lin, Y.: EM-TuA8, 114 

Lin, Y.C.: MN+AS-MoM11, 85 

Lin, Y.H.: EM+SS+AS+NS-ThM13, 155 

Lin, Y.-W.: TF-ThP13, 180; TF-ThP3, 180; 

VT-TuP5, 130 

Lince, J.R.: TR+SE-WeM12, 140 

Linck, M.: GR+AS+NS+SS-ThM5, 157 

Linder, B.P.: EM+TF+OX+GR-MoA7, 93 

Lindh, L.: BI+SS+AS-TuM3, 103 

Lindsay, A.: SE+PS-TuA3, 118; SE+PS- 

TuA4, 118 

Linford, M.R.: TF+EM+SS-ThA8, 172; TF2- 

TuA2, 120; TF-MoM4, 89; TF-WeM6, 

139 

Ling, Z.: PS-ThA10, 170 

Lingy, L.: VT-TuA3, 121; VT-TuP6, 130 

Linn-Molin, E.: TR+SE-WeM10, 140 

Liou, J.C.: MN+AS-MoM11, 85 

Lippitz, A.: AS+BI-TuM5, 102 

Lister, R.: NS-ThP2, 178 


Little, B.J.: MB+BI-ThA1, 169 

Liu, B.: IS+AS+SS+EN-TuM9, 105 

Liu, C.: PS1-ThM12, 160; SE-TuP4, 128 

Liu, J.: AS+NS+SS+TF-WeA10, 143; 

EN+SS-FrM3, 184; NM+AS+MS-MoM5, 

86 

Liu, L.: EM-ThP1, 175; EM-ThP2, 175; PS- 

MoM8, 88 

Liu, X.: EM-TuA7, 114; VT+AS+SS-WeM2, 

140; VT-TuA11, 121 

Liu, Y.: EM-ThM1, 156; EN+SS-FrM5, 184; 

SS+NS-TuA3, 119; TC+EM+AS-WeA3, 

150 

Liu, Y.H.: VT-TuA12, 121 

Liu, Z.: EN+SS-FrM5, 184; 

GR+EM+NS+SS+TF-ThA3, 169; 

IS+AS+SS+EN-TuM4, 105; 


Livadaru, L.: 


WeM2, 137 

Lizzit, S.: LB+EM+GR+MN+TR-WeA9, 146 

Ljazouli, R.: PS1-ThM2, 160 

Lo, C.-F.: EM-ThP1, 175; EM-ThP2, 175 

Lo, E.: IS+AS+BI+ET+GR+NS-TuA1, 116 

Lo, M.: SP+AS+BI+ET+MI+TF-WeA9, 149 

Lock, E.H.: GR+AS+BI+PS+SS-WeM9, 134; 

GR-ThP9, 176; PS-ThP40, 179 

Locquet, J.P.: IS+AS+OX+ET-WeM9, 135 

Lodge, M.: GR+EM+ET+MS+NS-FrM10, 

185; TR+SE-WeM11, 140 

Lofaro, J.C.: NS+AS+SS+SP-WeM12, 136 

Logvenov, G.: TF+AS-TuA10, 120 

Lohstreter, L.: AS+BI-TuM4, 102; AS- 

MoA8, 91 

Loncar, M.: MN-TuM1, 106 

Longo, C.: TF+SE+NS-WeM3, 139 

Lopez, G.P.: MB+BI-ThA6, 169 

Lopez-Lopez, S.: PS2-MoA6, 97 

Lopinski, G.P.: EM+NS-FrM1, 183 

Loquet, Y.: PS-ThP1, 178 

Lorenz, K.: AC+TF+SS+MI-MoA9, 91 

Losby, J.E.: MN-TuM9, 106 

Loscutoff, P.: EM-TuA1, 114 

Losego, M.D.: EN+NS-ThA1, 168; EN+SS- 

FrM1, 184; SE+NS-MoA10, 97 

Losovyj, Ya.B.: AC+TF+SS+MI-MoA1, 91; 

AC+TF+SS+MI-MoA7, 91 

Lottis, D.: MI+OX-WeA7, 147 

Lotze, C.: 


WeM4, 137 

Lou, J.: GR+EM+NS+SS+TF-ThA3, 169 

Lou, Y.: SS+NS-TuA4, 119 

Louette, P.: AS-MoA2, 91 

Louie, S.G.: GR+AS+NS+SS-ThM5, 157 

Love, C.: BI+AS-TuA4, 113 

Lovinger, D.: NS-ThM6, 159 

Lozova, N.: SS-TuP33, 129 

Lu, C.-J.: MN-MoA9, 94 

Lu, G.: GR+AS+NS+SP+SS-TuA2, 115; SS- 


Lu, H.L.: MN-MoA9, 94 

Lu, J.: IS+AS+SS+EN-TuM9, 105 

Lu, J.W.: EM+MI-ThA11, 166; MI+EN+BI- 

TuA7, 116 

Lu, L.: EM-TuM9, 103 

Lu, M.: TF+AS-WeA1, 151 

Lu, N.: EM+TF+OX+GR-MoA4, 93 

Lu, T.-M.: TF+SE+NS-WeM4, 139 

Lu, W.C.: SS-WeM4, 138 

Lu, W.H.: GR-ThP8, 176; SS-WeA1, 150 

Lu, Y.: AS-TuP26, 124; ET+SS+GR+SP- 

ThA3, 168; PS2-ThM5, 160 

Lu, Y.-H.: HI+AS+NS-WeA8, 146 

Lu, Y.P.: BI-TuP4, 125; GR-ThP2, 176; NS- 

ThP7, 178 

Lu, Y.W.: PS+EM-MoM4, 87 

Lu, Z.: SS-TuP26, 129

Lu, Z.-H.: OX+SS+TF+MI-MoA7, 96 

Lucatorto, T.B.: SS-TuM3, 109 

Lucchini, J.-F.: AC+EN-TuM9, 102 

Lucero, A.T.: EM+TF+OX+GR-MoM6, 84; 

TF2-TuA9, 120 

Luch, A.: AS-TuP1, 124 

Lui, Y.: IS+AS+BI+ET+GR+NS-TuA7, 116 

Lukasiak, L.: PS2-WeA3, 148 

Lukaszew, R.A.: TF+AS+SS-ThA8, 171; 


WeM6, 140; VT+AS+SS-WeM9, 140 

Lund, J.: LB+EM+GR+MN+TR-WeA3, 146 

Lundgren, C.A.: EN+NS-ThM10, 156 

Luo, B.: TF-ThP10, 180 

Luo, H.: EL+TF+BI+AS+EM+SS-MoA9, 92 

Luo, M.: SS-WeM2, 138 

Luo, X.: VT-TuM4, 110 

Luscombe, C.K.: ET+SS+GR+SP-ThA11, 

168; SS-TuP14, 129 

Luther, J.M.: EN+NS-MoM3, 84 

Lutolf, M.: BI-MoA1, 92 

Luttrell, T.: SS-TuP15, 129 

Lynch, S.: SE-TuP4, 128 

Lyubinetsky, I.: IS+AS+OX+ET-WeM2, 135; 

SS+EN+OX-ThM5, 161; SS+EN+OX- 

ThM9, 161; SS-TuM5, 109 

Lyytinen, J.: TF+NS+EM-ThM10, 163 

— M — 

Ma, J.: EN+AS-ThA1, 167 

Ma, K.S.: MN-TuP2, 126 

Ma, M.: EN+PS-WeM3, 133 

Ma, Q.: GR-ThP8, 176; 


WeM5, 137; SS-WeA1, 150 

Maas, D.J.: HI+AS+NS-WeA9, 146 

Maboudian, R.: EN+TF-WeA4, 144; TR+BI- 

TuM1, 110 

Macak, E.: AS+NS+SS+TF-WeA8, 143 

Macak, K.: AS+NS+SS+TF-WeA8, 143 

Maccallini, E.: EW-TuA5, 115 

Macco, B.: NS-MoM6, 86 

MacDonald, A.H.: EM+OX-WeA1, 144 

MacGearailt, N.: PS1-WeA1, 148; PS1- 

WeA4, 148 

Mack, P.: AS+BI-TuM11, 102; AS-MoA2, 

91; AS-MoM10, 82; BI+AS-TuA7, 113; 

EW-TuL3, 111 

Macke, S.: TF+AS-TuA10, 120 

Mackenzie, K.D.: PS1-TuM4, 107 

Mackus, A.J.M.: TF+EN-MoA4, 98; TF- 

TuM10, 109 

Madaan, N.: TF+EM+SS-ThA8, 172 

Madan, A.: EM-TuA8, 114 

Madisetti, S.: EM+TF+OX+GR-MoM3, 84 

Maeda, K.: PS-ThA1, 170 

Maerkl, S.: BI+AS-TuA11, 113 

Magana, S.: TF+EM+SS-ThA11, 172 

Magaud, L.: PS2-WeA12, 148 

Magel, G.A.: NS+SP-MoA4, 95 

Magnone, K.: 


WeM5, 137 

Magnuson, C.W.: GR+AS+NS+SP+SS- 

TuA11, 115 

Mahadevan, S.: PS2-MoA11, 97 

Mahadik, N.: TF+NS+EM-ThM1, 163 

Mahlstedt, M.: BI-MoA8, 92 

Mahoney, C.M.: AS+BI-TuM6, 102 

Mai, Z.H.: AS+BI-TuA2, 113; AS+BI-TuA4, 

113 

Maidecchi, G.: EL+TF+BI+AS+EM+SS- 

MoA8, 92 

Majer, M.: EM-TuA11, 114 

Majeski, M.: EN-ThP3, 175 

Majkic, G.: EN+TF-TuA8, 114 

Majzik, Z.: ET+SS+GR+SP-FrM5, 184; 



Mak, T.: EM-ThM5, 156 

Makabe, T.: PS+EM-MoM10, 87 

Maksymovych, P.: ET+SS+GR+SP-FrM9, 

184; NS+AS+SS+SP-WeM11, 136; SS- 

WeM4, 138 

Malgorzata, J.: TF-ThP1, 180 

Malinowski, A.: PS1-TuM5, 107; PS2-WeA3, 

148 

Malko, A.V.: EL+TF+BI+AS+EM+SS- 

MoA2, 92; EN+TF-WeA7, 144 

Mallik, S.: BI-TuP7, 125 

Malocsay, C.: EW-WeL2, 142 

Malyshev, O.B.: VT-TuM1, 110 

Mamun, M.A.: VT-MoM5, 90; VT-TuP16, 

130 

Manandar, B.: AS-WeM6, 132 

Manandhar, S.: OX-TuP6, 127 

Mancheno-Posso, P.L.: EM-ThP16, 175 

Mancini, D.C.: NS+SP-MoA11, 95 

Mangham, A.N.: SS+OX-WeM5, 138 

Manini, P.: EW-TuA5, 115; VT-TuM12, 110 

Mankelevich, Y.: PS1-ThM2, 160 

Mankey, G.J.: MI+OX-WeA12, 147 

Mann, H.S.: TF+EN-MoA7, 98 

Mann, J.: GR-ThP8, 176; SS-WeA1, 150 

Mann, W.: NS-ThM6, 159 

Mannequin, C.: OX-TuP2, 127; TF+MI- 

WeA7, 151 

Manno, M.: EN+TF-MoA8, 93; EN+TF- 

MoA9, 93 

Manoharan, E.A.: MI+OX-WeA12, 147 

Mansour, A.N.: GR+AS+NS+SS-ThM10, 

157 

Mao, B.: IS+AS+SS+EN-TuM4, 105 

Marchack, N.: PS1-ThM11, 160 

Marchman, K.R.: TR+BI-TuM10, 110; TR- 

TuA3, 121 

Marcott, C.: SP+AS+BI+ET+MI+TF-WeA9, 

149 

Marder, S.R.: SS-TuP14, 129 

Margarella, A.: SS+NS-TuA3, 119; SS-ThA1, 

171; SS-ThA2, 171 

Mari, D.: VT-MoA1, 99 

Maria, J.-P.: TF+AS-TuA12, 120 

Mariani, R.D.: AC+EN-TuM1, 102 

Marić, D.: MB+BI-ThA4, 169 

Marichy, C.: TF+NS+EM-ThM9, 163 

Marinella, M.: ET+NS+EM-ThM10, 157 

Marot, L.: PS2-WeA1, 148 

Marquardt, A.E.: TF-MoM3, 89 

Marquis, E.A.: AS+NS+SS+TF-WeA1, 143 

Marshall, C.: TF+EN-MoA1, 98 

Marsillac, S.: 


MoM1, 83; 


MoM4, 83 

Marti, F.: VT-TuA3, 121; VT-TuP6, 130 

Martin, F.: EM+TF+OX+GR-MoA9, 93 

Martin, R.L.: AC+MI+SS+TF-MoM3, 82 

Martin, R.M.: PS2-TuM6, 108; PS-MoM6, 88 

Martin, R.W.: AC+TF+SS+MI-MoA9, 91 

Martínez de Olcoz Sainz, L.: TR+SE-WeM4, 

140 

Martinez, E.: EM+TF+OX+GR-MoA9, 93; 

NS-ThM10, 159 

Martinez, H.P.: BN+AS-WeA3, 143 

Martinez, J.: OX-TuP4, 127 

Martinez, L.: PS1-TuM4, 107 

Martini, A.: SE+NS-MoA1, 97 

Martirez, J.: SS+OX-WeM10, 138 

Masahara, M.: EM-ThM1, 156 

Mascarenhas, A.: MI+SP+AS-ThM12, 159 

Masheder, B.: SS-ThM1, 161 

Masini, F.: SS-ThM5, 161 

Masters, A.E.: TF+EN-MoA7, 98 

Mastrangelo, A.M.: PS+TC-WeM5, 136 

Mastro, M.A.: EM+TF+AS-ThA6, 167; 

SS+EM-WeA1, 149; TF+NS+EM-ThM1, 

163 

Mathias, A.D.: MN-MoA6, 94; MN-TuM6, 

106 

Mathieu, P.: NS+SP-MoA7, 95 

Matos, J.: SS-TuP27, 129 

Matsubayashi, A.: GR+AS+EM+NS+SS- 

WeA7, 145 

Matsuda, A.: PS-ThP20, 179 

Matsugai, H.: PS-ThP14, 178 

Matsui, K.: TF-ThP12, 180 

Matsukawa, T.: EM-ThM1, 156 

Matsumoto, H.: PS-MoM2, 88 

Matsumoto, K.: ET+NS+EM-ThM5, 157 

Matsumoto, S.: SS-ThA10, 171 

Matsunaga, S.: BI+SS+NS-WeM11, 132 

Matsuo, J.: AS-ThM9, 155 

Matsushima, K.: EN-ThP6, 175 

Matsushita, S.Y.: SS-MoA10, 98 

Matsuura, G.: PS-MoM2, 88 

Mattes, W.: TR-TuP7, 130 

Matthews, O.: TR+SE-WeM10, 140 

Mattrey, R.F.: BI-TuP15, 125; BN+AS- 

WeA3, 143 

Mattson, E.: AS-WeM6, 132; 



Mau, X.: EM+OX-WeA1, 144 

Maucher, H.P.: PS1-WeA11, 148 

Mavrakakis, K.: EM-TuA10, 114 

Mavrikakis, M.: SS-MoA7, 98; SS-TuP1, 129 

Maxisch, M.: OX+SS+TF+MI-MoA11, 96 

Mayer, B.: SE+NS-MoM5, 88 

Mayrhofer, P.H.: SE+NS-MoM5, 88; SE+NS- 

MoM6, 88 

Maziarz, E.P.: AS-TuP19, 124 

Mazzio, K.: ET+SS+GR+SP-ThA11, 168 

McArthur, S.L.: MB+BI-ThA4, 169; MB+BI- 

ThM3, 158 

McBreen, P.H.: SS-ThM5, 161 

McCleskey, T.M.: IS+AS+OX+ET-WeM3, 

135 

McClimon, J.B.: EM+NS-FrM6, 183; EN- 

ThP1, 175 

McClory, J.W.: AC+TF+SS+MI-MoA1, 91; 


McCormack, R.N.: MN-TuP6, 126 

McDonald, K.: SS-MoA3, 98 

McEuen, P.L.: MN-TuM10, 106; MN- 

TuM11, 106 

McGuckin, T.: NS+EN-TuM6, 107 

McGuire, C.: GR+EM+ET+MS+NS-FrM3, 

185 

McHale, S.R.: AC+TF+SS+MI-MoA1, 91 

McLean, K.M.: BI-MoM1, 83 

McLean, R.S.: TF-MoM10, 89 

McNamara, J.D.: EM+TF+AS-ThA4, 167 

McNeilan, J.D.: GR+AS+NS+SP+SS-TuA11, 

115 

McWilliams, A.: SE+PS-TuA3, 118 

Meagher, L.: BI-MoM5, 83 

Medikonda, M.: 


MoM9, 83 

Medina, A.A.: EL+TF+AS+EM+SS-TuP2, 

125 

Meersschaut, J.: TF-ThP1, 180 

Mehr, T.: SP+AS+BI+ET+MI+TF-WeA11, 

149 

Mei, AR.B.: TF+NS+EM-ThM12, 163 

Mei, D.: AS-TuP17, 124 

Mei, W.N.: AC+TF+SS+MI-MoA1, 91 

Mei, Y.: BI-MoA11, 92 

Meléndez-Lira, M.: NS-MoM2, 86; TF- 

ThP16, 180 

Melendez-Lira, M.A.: TF-ThP8, 180 

Melese, Y.G.: 


MoM6, 83 

Melitz, W.: AS-TuP21, 124 

201 Author Index

Melton, A.G.: EM+TF+AS-ThA11, 167; 

EM+TF+AS-ThA9, 167 

Melvin, T.: SE+NS-MoA3, 97 

Melzer, J.I.: TF-ThP5, 180 

Membreno, D.: EN+NS-ThM6, 156; EN+TF- 

WeA9, 144 

Mendes, G.P.: AS-TuP11, 124; BI+AS-TuA7, 

113 

Mendez, N.: BI+SS+NS-WeM6, 132 

Mendez, P.: BI-TuP3, 125 

Meneghini, C.: AS-ThA7, 166 

Meng, G.W.: ET+NS+EM-ThM4, 157 

Meng, L.: PS-ThP36, 179; SE+PS-TuM3, 

108; SE+PS-TuM4, 108 

Menguelti, K.: PS-ThP5, 178; PS-ThP7, 178 

Menzel, D.: LB+EM+GR+MN+TR-WeA9, 

146; SS+NS-TuA1, 119 

Méolans, J.G.: MN-TuP1, 126 

Merchea, M.: AS-TuP19, 124 

Merckling, C.: EM+TF+OX+GR-MoA1, 93 

Merrill, M.D.: IS+AS+OX+ET-WeM6, 135 

Merte, L.: SS-TuP25, 129; SS-TuP28, 129 

Meseck, G.R.: NS-ThP1, 178 

Messer, B.: PS-MoM5, 88 

Metz, A.: PS-ThP16, 178 

Metzler, D.: PS2-TuA1, 118 

Mewes, K.A.: MI+EN+BI-TuA3, 116 

Mewes, T.: EM+MI-ThA11, 166; 

MI+EN+BI-TuA3, 116; MI+OX-WeA2, 

147 

Meyer III, H.M.: AS-TuP12, 124; 

EM+TF+OX+GR-MoM9, 84 

Meyer, D.J.: EM+OX-WeA8, 144; 


Meyer, G.: SP+AS+BI+ET+MI+NS-TuA1, 

119 

Meyer, H.M.: SS-WeM10, 138 

Meyer, J.R.: EM+TF+AS-ThA6, 167 

Meyer, R.L.: BI+AS-TuA3, 113 

Meyer, T.J.: EN+SS-FrM3, 184 

Mhatre, B.S.: SS-MoA6, 98 

Miao, X.: GR+EM+ET+MS+NS-FrM11, 185 

Michael, J.R.: AS-TuP5, 124 

Michalak, T.: EM-ThP8, 175 

Michallon, P.: NM+NS+MS+EM-MoA6, 95 

Michelmore, A.: PS1-TuA4, 117; PS-ThA8, 

170 

Michely, T.W.: GR+AS+NS+SP+SS-TuA7, 


Mickel, P.R.: ET+NS+EM-ThM10, 157 

Mignot, S.: PS-ThP1, 178 

Mignot, Y.: PS2-TuM9, 108; PS-ThP1, 178; 

PS-WeM1, 137; PS-WeM11, 137; PS- 

WeM4, 137 

Mihaila, B.: EM+NS-FrM11, 183 

Mikkelsen, A.: EM+MI-ThA6, 166; 

ET+NS+EM-ThM6, 157; SS+NS-ThA1, 

170 

Mikulski, P.T.: TR-TuA8, 121 

Miller, C.W.: MI+SP+AS-ThM5, 159; TF- 

ThP4, 180 

Miller, G.P.: SS-TuP4, 129 

Miller, I.: EW-WeL4, 142 

Miller, J.: IS+AS+SS+EN-TuM9, 105 

Miller, J.B.: SS-WeA11, 150; TR+SE-WeM4, 

140 

Miller, T.J.: EN+AS-ThA8, 167 

Millunchick, J.M.: SS+EM-WeA2, 149; SS- 


Milosavljevic, V.: PS1-TuM3, 107; PS1- 

WeA1, 148; PS1-WeA4, 148 

Milstrey, T.E.: SS-TuP23, 129 

Mily, E.: TF+AS-TuA12, 120 

Min, B.K.: PS+BI-MoA3, 96 

Min, G.J.: PS2-ThM12, 160; SE-TuP1, 128 

Min, H.: AS+BI-TuM5, 102 

Min, K.S.: PS2-ThM6, 160; PS-ThP28, 179 

Minami, M.: PS-ThP14, 178 

Minami, T.: EN-ThP12, 175; EN-ThP7, 175 

Minne, S.C.: SP+AS+BI+ET+MI+TF-WeA8, 

149 

Minton, T.K.: SS-MoA1, 98 

Mirmelstein, A.: AC+MI+SS+TF-MoM9, 82 

Mishra, S.R.: AC+TF+SS+MI-MoA8, 91 

Misra, S.: TR-TuA11, 121 

Mistry, H.: SS-TuP28, 129 

Mita, S.: EM+TF+AS-ThA1, 167 

Mittemeijer, E.J.: IS+AS+OX+ET-WeM5, 

135 

Mitterer, C.: SE+NS-MoM6, 88; SE+NS- 

MoM9, 88 

Miura, N.: PS+EM-MoM5, 87 

Miura, T.: TR-TuP2, 130; VT-TuP8, 130 

Miwa, H.: PS2-ThM4, 160 

Miwa, K.: MN-TuP4, 126; PS2-ThM11, 160 

Miya, G.: PS-ThA1, 170 

Miyake, K.: PS2-TuA9, 118 

Miyake, M.: SS-TuP17, 129 

Miyamoto, J.: LB+EM+GR+MN+TR-WeA2, 

146 

Miyamoto, K.: MI-WeM1, 135 

Miyashita, H.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Miyata, T.: EN-ThP12, 175; EN-ThP7, 175 

Miyawaki, Y.: PS2-MoA7, 97; PS-ThP14, 

178 

Miyazoe, H.: PS1-ThM12, 160 

Miyoshi, J.: TF-ThP11, 180 

Mizotani, K.: PS2-TuA4, 118; PS2-TuA9, 

118 

Mleczko, M.: NS-ThP2, 178 

Mo, A.K.: SS-WeM10, 138 

Moberg, R.: AS+TF+VT-FrM7, 183 

Modine, N.A.: SS+EM-WeA2, 149; SS- 


Moeller, R.: ET+SS+GR+SP-FrM7, 184 

Moellers, R.: AS-MoA4, 91; AS-ThM11, 

155; AS-WeM11, 132 

Mohan, P.: VT-MoA1, 99 

Mohn, F.: SP+AS+BI+ET+MI+NS-TuA1, 

119 

Mohondro, R.: EW-WeA6, 145 

Mohr, S.: EN+PS-WeM12, 133; EN+PS- 

WeM9, 133 

Moisan, M.: PS+TC-WeM1, 136 

Molis, S.: EM-TuA8, 114 

Molkenboer, F.T.: HI+AS+NS-WeA9, 146; 

PS-ThA9, 170; PS-ThP15, 178 

Moll, N.: SP+AS+BI+ET+MI+NS-TuA1, 119 

Mönig, H.: SP+AS+BI+ET+MI+NS-TuA10, 

119 

Montgomery, A.M.: TF+EM+SE+NS-ThM4, 

162 

Monton, C.M.: AS+TF+VT-FrM2, 183 

Monya, Y.: IS+AS+SS+EN-TuM12, 105 

Moody, B.: EM+TF+AS-ThA1, 167 

Moon, B.N.: PS-ThA10, 170; PS-ThP33, 179; 

PS-ThP35, 179 

Moon, D.W.: BI-TuP5, 125; BP+AS-SuA1, 

78 

Moon, J.-B.: MN+AS-MoM8, 85 

Moon, J.S.: GR+EM+ET+MS+NS-FrM3, 


Moon, K.: MI+OX-WeA7, 147 

Moon, S.Y.: PS2-WeA11, 148 

Moore, J.F.: BN+AS-WeA12, 143 

Moore, R.: EM+TF+OX+GR-MoM3, 84; 


Moore, T.M.: NS+SP-MoA4, 95 

Morales, C.: NS-MoM9, 86 

Morales, E.: SS+OX-WeM10, 138 

Moras, P.: MI-WeM3, 135 

Mordi, G.: GR+EM+ET+MS+NS-FrM7, 185 

Morgan, G.: VT-TuA3, 121; VT-TuP6, 130 

Morgante, A.: SS+OX-WeM6, 138 

Morgen, P.: EM+NS-FrM4, 183; 

EM+SS+AS+NS-ThM3, 155; EN-ThP5, 

175 


Mori, T.: PS-MoM5, 88 

Morita, S.: SP+AS+BI+ET+MI+NS-TuA11, 

119 

Morita, Y.: PS-ThP13, 178 

Moroz, P.: PS-ThP3, 178 

Morra, M.M.: TF-ThP5, 180 

Morris, B.G.: PS2-TuM6, 108; PS2-TuM9, 

108; PS-ThP1, 178; PS-WeM1, 137; PS- 

WeM11, 137 

Morrish, F.: BN+AS-WeA4, 143 

Morrish, R.: EN+TF-MoA10, 93 

Moshar, A.: EW-TuM8, 104; 


Moss, G.: BN+AS-WeA10, 143 

Mostafa, S.: SS-TuP27, 129 

Mota-Pineda, E.: TF-ThP8, 180 

Moulder, J.F.: AS-ThA3, 166; EN+AS-ThA4, 

167; EW-TuL5, 111 

Mousa, M.B.: NM+NS+MS+EM-MoA8, 95 

Mowll, T.: GR+EM+NS+PS+SS+TF-MoM2, 

85 

Mráz, S.: SE+NS-MoM8, 88 

Mucha, J.A.: PS1-TuA10, 117 

Mücklich, A.: SE+NS-MoM2, 88 

Müthing, J.: AS-TuP1, 124 

Muir, B.W.: BI-MoM1, 83 

Muirhead, L.: IS+AS+BI+ET+GR+NS-TuA3, 

116 

Mujahid, M.: EN+TF-MoA11, 93 

Mukherjee, D.: EN+NS-MoM6, 84; MI+OX- 

WeA9, 147; OX+EM+MI+NS+TF- 

MoM1, 87 

Mukherjee, P.: EN+NS-MoM6, 84; MI+OX- 

WeA9, 147; OX+EM+MI+NS+TF- 

MoM1, 87 

Mukherjee, T.: PS-WeM5, 137 

Mulhollan, G.A.: VT-MoM3, 90 

Muller, D.A.: OX+EM+MI+NS+TF-MoM8, 

87 

Mullet, C.: NS-ThM6, 159; SS+NS-ThA6, 

170 

Mullins, D.R.: SS-TuM11, 109 

Mulvaney, S.P.: GR+AS+BI+PS+SS-WeM5, 

134; GR-ThP9, 176 

Mumcu, G.: TF-MoM8, 89 

Munakata, T.: SS-TuP31, 129 

Muñoz-Flores, J.: AS-TuP16, 124 

Munson, A.: GR+AS+NS+SP+SS-TuA11, 

115 

Munusamy, P.: AS+BI-TuA12, 113; BI- 

TuP9, 125 

Murakami, Y.: PS-ThP6, 178 

Muratore, C.: SE+NS-MoA1, 97; SE-TuP3, 

128; TR+SE-WeM1, 140 

Murphy, C.J.: EM+SS+AS+NS-ThM9, 155 

Murphy, N.R.: SE+PS-TuM9, 108; 


Murphy, P.J.: PS1-TuA3, 117 

Muscat, A.J.: EM+TF-WeM6, 133; EM- 

ThP16, 175; TF-TuM6, 109 

Music, D.: SE+NS-MoM8, 88 

Muthinti, G.R.: 


MoM9, 83; NM+AS+MS-MoM3, 86 

Mutombo, P.: SP+AS+BI+ET+MI+NS- 

TuA4, 119 

Mutoro, E.: IS+AS+SS+EN-TuM5, 105 

Muzzillo, C.: EN+TF-TuM10, 104 

Myers-Ward, R.L.: GR+AS+BI+PS+SS- 

WeM9, 134; GR+AS+NS+SP+SS-TuA9, 

115; GR+EM+ET+MS+NS-FrM3, 185; 





GR-ThP9, 176 

— N — 

Na, B.-K.: PS-ThP42, 179 

Na, J.H.: NS-ThP6, 178

Nabok, A.V.: NS+SP-MoA1, 95 

Nachimuthu, P.: EN-ThP10, 175; OX-TuP6, 

127; SS-TuP26, 129; 


Nadzeyka, A.: LB+EM+GR+MN+TR-WeA7, 

146 

Naes, B.E.: AS+NS+SS+TF-WeA7, 143 

Nagaiah, P.: EM+TF+OX+GR-MoM3, 84 

Nagano, S.: HI+AS+BI+NS-ThM12, 158 

Nagarah, J.: PS-WeM12, 137 

Nagareddy, V.K.: GR+EM+NS+PS+SS+TF- 

MoM1, 85 

Nagata, M.: VT-MoM1, 90 

Nagorny, V.: PS2-TuM10, 108; PS-ThA11, 

170 

Nahif, F.: SE+NS-MoM8, 88 

Naik, R.R.: GR+AS+BI+PS+SS-WeM6, 134 

Nain, A.S.: BI-TuP10, 125 

Naitoh, Y.: PS2-ThM3, 160 

Najmaei, S.: GR+EM+NS+SS+TF-ThA3, 169 

Nakabayashi, D.: MN-TuP9, 126 

Nakagawa, S.: AS-ThM9, 155 

Nakahara, S.: HI+AS+BI+NS-ThM6, 158 

Nakajima, A.: SS-TuP18, 129 

Nakajima, H.: PS-ThP34, 179 

Nakajima, S.: SS-MoA8, 98 

Nakajima, T.: SS-TuP7, 129 

Nakakubo, Y.: PS-ThP20, 179 

Nakamura, G.: PS-ThP34, 179 

Nakamura, I.: SS-TuP29, 129; SS-TuP30, 129 

Nakamura, J.: GR+AS+EM+NS+SS-WeA12, 


Nakamura, K.: PS1-WeA3, 148 

Nakamura, M.: PS-MoM2, 88; PS-WeM10, 

137 

Nakamura, S.: PS-WeM4, 137 

Nakano, Y.: EN+TF-TuA12, 114 

Nakatsuji, K.: GR+AS+NS+SS-ThM1, 157 

Nakayama, D.: PS-MoM6, 88 

Nakazaki, N.: PS2-TuA10, 118 

Nam, S.H.: VT-TuP11, 130; VT-TuP12, 130; 

VT-TuP13, 130; VT-TuP14, 130 

Nam, S.W.: PS2-ThM6, 160 

Nam, S.-W.: TF2-TuA3, 120 

Nampoori, V.: EN+TF-WeA11, 144 

Nanayakkara, S.: NS-WeA1, 147; 


Nandasiri, M.I.: OX-TuP6, 127 

Narayanan, S.: TC+EM+AS-WeA9, 150 

Narayanan, V.: EM+TF+OX+GR-MoA7, 93 

Narishige, K.: PS-ThP12, 178 

Nasir, A.N.: EM+OX-WeA12, 144 

Nasse, M.: GR+AS+NS+SP+SS-TuA2, 115 

Natarajarathinam, A.: TF+MI-WeA3, 151; 


Nath, A.: GR+EM+ET+MS+NS-FrM5, 185; 




Nathanson, G.M.: SS-MoA1, 98 

Naude, N.: PS+TC-WeM6, 136 

Naudé, N.: PS+BI-MoA10, 96; PS+BI- 

MoA11, 96 

Nayfeh, O.: GR+EM+ET+MS+NS-FrM8, 

185 

Nayyar, N.: NS-WeA9, 147 

N'Diaye, A.T.: GR+AS+EM+NS+SS- 

WeA10, 145 

Neal, C.: BI-TuP11, 125 

Nedrygailov, I.: SS-MoM2, 89; SS-MoM3, 


Nefedov, A.: GR-ThP3, 176; 

OX+SS+TF+MI-MoA10, 96 

Negreiros, F.R.: SS+OX-WeM12, 138 

Nejati, S.: EN+TF-WeA3, 144 

Nelin, C.J.: SS+OX-WeM9, 138 

Nelson, A.J.: AC+EN-TuM10, 102; AC+EN- 

TuM3, 102 

Nelson, C.M.: EL+TF+BI+AS+EM+SS- 

MoA9, 92 

Nelson, F.J.: GR+AS+NS+SP+SS-TuA11, 

115 

Nemani, S.D.: PS2-TuM2, 108 

Nepal, N.: EM+TF+OX+GR-MoM9, 84; 



Netzer, F.P.: SS+OX-WeM12, 138 

Neunzehn, J.: BI-TuP12, 125 

Newbury, J.S.: EM+NS-FrM10, 183 

Ney, A.: SS+OX-WeM5, 138 

Ney, V.: SS+OX-WeM5, 138 

Ng, A.: EM+TF-WeM6, 133 

Ng, T.H.: AS+BI-TuA4, 113 

Nguyen, H.M.: EL+TF+BI+AS+EM+SS- 

MoA2, 92; EN+TF-WeA7, 144 

Nguyen, S.: TF+EN-MoA1, 98 

Nichols, M.T.: EM-ThP10, 175; EM-ThP11, 

175; EM-TuA10, 114; PS-ThA10, 170 

Nie, X.: TR+SE-WeM6, 140 

Nie, X.W.: OX-TuP1, 127 

Niehuis, E.: AS-MoA4, 91; AS-ThM11, 155; 

AS-WeM11, 132 

Nienhaus, H.: SS-MoM5, 89 

Nieto-Zepeda, K.E.: TF-ThP8, 180 

Nigge, P.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Nijem, N.: EN+AS-ThA7, 167; IS-TuP2, 126 

Nikitin, V.: MI+OX-WeA7, 147 

Ninomiya, S.: AS-ThM12, 155; AS-TuP6, 

124 

Nishi, H.: SS-TuP32, 129 

Nishi, Y.: EM-ThP10, 175; EM-ThP11, 175; 

EN-ThP12, 175; PS-ThA10, 170; PS- 

ThP35, 179 

Nishimori, Y.: MN-TuP4, 126 

Nishimoto, S.: SS-TuP17, 129 

Nishizuka, T.: PS-ThP34, 179 

Nisol, B.: SE+PS-TuA9, 118 

Niu, C.: PS-WeM11, 137 

Noborisaka, M.: SE-TuP2, 128 

Noei, H.: OX+SS+TF+MI-MoA10, 96 

Noh, J.: TC-ThP4, 180 

Noh, J.H.: TC-ThP4, 180 

Nomoto, J.: EN-ThP7, 175 

Nonnenmann, S.S.: SP+AS+BI+ET+MI+TF- 

WeA3, 149 

Notestein, J.: TF+EN-MoA1, 98 

Notingher, I.: BN+AS-WeA1, 143 

Notte, J.: HI+AS+NS-WeA10, 146 

Noufi, R.: EN+AS-ThA1, 167 

Novak, J.: SP-TuP1, 128 

Novak, S.: EM+TF+OX+GR-MoM3, 84 

Novikova, I.: TF+AS+SS-ThA8, 171 

Novoselov, K.: GR+AS+BI+PS+SS-WeM2, 

134 

Nozaki, T.: EN+PS-WeM1, 133 

Nozawa, T.: PS2-MoA11, 97 

Nozik, A.J.: EN+NS-MoM3, 84 

Ntwaeaborwa, O.M.: SS+OX-WeM11, 138 

Nunney, T.: EW-TuL2, 111 

Nunney, T.S.: AS+BI-TuM11, 102; AS- 

MoA2, 91; EW-TuL3, 111; GR-ThP1, 

176 

Nyakiti, L.O.: GR+AS+BI+PS+SS-WeM9, 







GR-ThP9, 176 

Nyns, L.: LB+EM+GR+MN+TR-WeA12, 

146 

— O — 

Oates, T.W.H.: SE+NS-MoM2, 88 

Obama, S.: PS-ThA1, 170 

Obare, S.: NM+AS+MS-MoM8, 86 

O'Brien, C.J.: TF+AS-TuA7, 120 

O'Brien, K.E.: NS-WeA2, 147 

Ocola, L.E.: NS+SP-MoA10, 95 

O'Connor, S.: EM+TF+AS-ThA6, 167 

Oda, S.: NS+EN-TuM5, 107 

Oden, M.: TF+NS+EM-ThM12, 163 

Odén, M.: TF+NS+EM-ThM11, 163 

O'Donnell, K.P.: AC+TF+SS+MI-MoA9, 91 

Oehrlein, G.S.: PS+BI-MoA2, 96; PS+BI- 

MoA6, 96; PS2-TuA1, 118; PS2-WeA11, 

148 

Oehzelt, M.: GR-ThP3, 176 

Oezkaya, B.: TF+AS+SS-ThA1, 171 

Offermanns, V.: BI-MoM11, 83 

Offi, F.: AC+TF+SS+MI-MoA3, 91; AS- 

ThA10, 166 

Ogaki, R.: BI+AS-TuA3, 113; BI+SS+NS- 

WeM1, 132; BI-MoM2, 83 

Ogawa, S.: HI+AS+BI+NS-ThM6, 158 

Ogino, T.: GR-ThP5, 176 

Ogitsu, T.: IS+AS+OX+ET-WeM6, 135 

Oh, D.-H.: GR-ThP6, 176; NS+EN-TuM1, 

107; SS+NS-ThA3, 170 

Oh, J.S.: ET-ThP1, 176 

Oh, Y.: TC+EM+AS-WeA7, 150 

Ohkouchi, T.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Ohldag, H.: GR+AS+EM+MI+MN-TuM9, 

105 

Ohlhausen, J.A.: AS-TuP5, 124 

Ohmi, H.: PS+TC-WeM3, 136; SE+PS- 

TuA8, 118 

Ohno, S.: SS-MoA9, 98 

Ohsawa, Y.: PS-ThP34, 179 

Ohsiek, S.: EM-TuA11, 114 

Ohta, T.: GR+AS+NS+SP+SS-TuA8, 115 

Ohtake, A.: SS-TuP8, 129 

Ohtake, H.: PS-ThP34, 179; PS-ThP8, 178 

Ohtsuka, S.: PS2-ThM9, 160 

Ohuchi, F.S.: TC+EM+AS+TF+EN-ThM11, 

162 

Okamoto, M.: PS-ThP6, 178 

Oktyabrsky, S.: EM+TF+OX+GR-MoM3, 84 

Okuda, T.: EM+TF+AS-ThA12, 167 

Oldham, C.J.: NM+NS+MS+EM-MoA8, 95; 

TF2-TuA7, 120 

O'Leary, L.E.: EM+TF-WeM12, 133 

Oleson, B.: EM-ThP15, 175 

Oleynik, I.I.: ET+SS+GR+SP-ThA4, 168; 



Olmstead, M.A.: TC+EM+AS+TF+EN- 

ThM11, 162 

Olson, A.: SP-TuP1, 128 

Olson, A.G.: PS-ThP35, 179 

Olson, D.: AS-TuP18, 124 

Olson, D.A.: VT-MoM6, 90 

Omberg, R.P.: AC+EN-TuM1, 102 

Ondeck, N.: SS-ThM2, 161 

Ondracek, M.: ET+SS+GR+SP-FrM4, 184; 


Ondráček, M.: ET+SS+GR+SP-FrM5, 184 

Ong, P.: MN-TuM11, 106 

Ong, S.W.: SS+EN+OX-ThM4, 161 

Onishi, K.: HI+AS+BI+NS-ThM12, 158; PS- 

MoM9, 88 

Ono, K.: PS2-ThM9, 160; PS2-TuA10, 118; 

PS2-TuA12, 118; PS-ThP20, 179 

Ono, L.K.: SS-TuP27, 129 

Oppen, F.V.: 


WeM4, 137 

Ortíz, V.: SS-TuP10, 129 

Osgood, R.M.: SS+NS-TuA4, 119; SS-TuP2, 


Oshima, M.: GR+AS+EM+NS+SS-WeA12, 

145 

Osma, J.F.: BI-TuP6, 125 

Osofsky, M.: EM+MI-ThA11, 166 

203 Author Index

Ossowski, J.: TF+AS+SS-ThA2, 171 

Ostrikov, K.: TF+EM+SE+NS-ThM1, 162 

Otani, T.: SS-ThM12, 161 

Ou, Y.-C.: NS-ThP7, 178 

O'uchi, S.: EM-ThM1, 156 

Outlaw, R.A.: GR+AS+NS+SS-ThM10, 157 

Ouyang, W.: ET+NS+EM-ThM3, 157 

Ouyang, Z.: PS-ThP36, 179 

Overzet, L.J.: PS+EM-MoM3, 87 

Owen, A.G.: TF+EM+SE+NS-ThM4, 162 

Ozcan, A.: EM+NS-FrM9, 183 

Ozimek, P.: EW-WeL5, 142 

Ozkirac, S.: EN-ThP13, 175 

— P — 

Pachauri, N.: MI+OX-WeA12, 147 

Pacholski, M.L.: AS+NS+SS+TF-WeA9, 143 

Padbury, R.P.: TF+NS+EM-ThM5, 163; TF2- 

TuA10, 120; TF-TuM9, 109 

Padron-Wells, G.: PS-MoM9, 88 

Page, S.J.: AS+NS+SS+TF-WeA8, 143; AS- 

ThM1, 155 

Pai, W.W.: LB+EM+GR+MN+TR-WeA8, 

146 

Paiella, R.: EM+SS+AS+NS-ThM1, 155 

Paiva Junior, J.M.F.: TR-TuP7, 130 

Pal, S.: NS-MoM9, 86 

Palai, R.: AC+TF+SS+MI-MoA1, 91 

Palmans, J.: PS2-WeA9, 148 

Palmer, J.A.: TF-TuM9, 109 

Palmstrom, C.: EM+MI-ThA6, 166 

Palmstrøm, C.: EM+MI-ThA10, 166 

Palomares Linares, J.M.: PS1-WeA7, 148 

Palombo, E.: MB+BI-ThA4, 169 

Palomino, R.: NS+AS+SS+SP-WeM12, 136 

Pan, H.B.: SS+NS-TuA11, 119 

Pan, L.D.: GR-ThP12, 176 

Pan, M.H.: SP+AS+BI+ET+MI+NS-TuA12, 

119; SS-WeM4, 138 

Pan, X.: SS+OX-WeM1, 138 

Pan, Y.H.: SS+NS-TuA11, 119 

Panaccione, G.: AC+TF+SS+MI-MoA3, 91; 

AS-ThA10, 166 

Pande, K.: SS-TuP3, 129 

Pandey, A.: NS-WeA10, 147; PS1-WeA3, 

148; TC+EM+AS+TF+EN-ThM5, 162 

Pandey, R.R.: BI-TuP17, 125; NS-MoM11, 

86 

Paniagua, S.A.: SS-TuP14, 129 

Pantelides, S.T.: ET+SS+GR+SP-FrM1, 184 

Paolini, C.: VT+AS+SS-WeM3, 140 

Papa Rao, S.S.: TF2-TuA3, 120 

Pappas, D.: PS+TC-WeM11, 136 

Pargon, E.: PS2-TuM2, 108; PS-ThP5, 178; 

PS-ThP7, 178 

Paris, A.: GR-ThP3, 176 

Park, B.: PS+BI-MoA3, 96 

Park, C.: AS-ThA10, 166 

Park, C.D.: VT-TuP10, 130; VT-TuP7, 130 

Park, C.M.: MI+OX-WeA7, 147 

Park, C.-Y.: GR+EM+NS+PS+SS+TF- 

MoM4, 85; GR-ThP6, 176; NS+EN- 

TuM1, 107; SS+NS-ThA3, 170 

Park, D.-G.: EM+NS-FrM10, 183 

Park, H.: NS+AS+SS+SP-WeM12, 136 

Park, J.: PS2-ThM5, 160; SS-ThM1, 161; SS- 


Park, J.B.: PS+TC-WeM9, 136; PS-ThP27, 

179 

Park, J.G.: EM+OX-WeA7, 144; 


Park, J.H.: EN+NS-MoM1, 84; SS-ThM11, 

161 

Park, J.-H.: GR+EM+NS+PS+SS+TF- 

MoM11, 85 

Park, J.-H.: NS-ThP9, 178 

Park, J.W.: ET-ThP1, 176 

Park, J.Y.: SS-MoM1, 89 

Park, K.H.: EN-ThP4, 175 

Park, M.L.: PS-ThP23, 179 

Park, S.J.: PS-WeM9, 137 

Park, S.-W.: MN+AS-MoM8, 85 

Park, T.H.: NS-WeA1, 147 

Park, Y.: EM+OX-WeA11, 144; PS-ThP1, 

178 

Park, Y.D.: MI-ThP5, 177 

Park, Y.J.: BI-TuP5, 125; PS-WeM4, 137 

Parkin, J.D.: 


WeM9, 137; SP+AS+BI+ET+MI+TF- 

WeA7, 149 

Parks, C.: EM-TuA8, 114 

Parpia, J.M.: MN-MoA1, 94; MN-TuM10, 

106; MN-TuM11, 106 

Parracino, M.A.: NS+EN+GR-TuA2, 117 

Parsons, G.N.: EN+NS-ThA1, 168; EN+SS- 

FrM1, 184; EN+SS-FrM3, 184; 

NM+NS+MS+EM-MoA8, 95; 

NS+EN+GR-TuA10, 117; TF+EN-MoA8, 

98; TF2-TuA1, 120; TF2-TuA7, 120 

Parthasarathy, A.: MB+BI-ThM9, 158 

Pascual, J.I.: 


WeM4, 137 

Pasic, P.: BI-MoM5, 83; BI-MoM6, 83 

Pastewka, L.: TR-TuA1, 121 

Patel, A.: EN+AS-ThA6, 167 

Patel, A.K.: BI-MoA4, 92 

Patel, R.: PS1-TuA7, 117 

Patel, S.: EM+MI-ThA10, 166 

Paterson, A.: PS-MoM11, 88 

Patil, S.: PS-WeM11, 137 

Patscheider, J.: SE+PS-TuM5, 108 

Pattanaik, G.: EN+NS-ThM9, 156 

Patzke, G.R.: NS-ThP1, 178 

Paul, D.F.: NS-ThM12, 159 

Paul, J.: PS2-TuM12, 108 

Paul, P.: NS+SP-MoA2, 95 

Paul, W.: AS-WeM11, 132 

Paulitsch, J.: SE+NS-MoM5, 88 

Payzant, E.A.: EN+TF-TuM10, 104 

Pearton, S.J.: EM-ThP1, 175; EM-ThP2, 175; 

EM-TuM9, 103 

Peck, J.: EN-ThP11, 175 

Peckerar, M.: EM+OX-WeA9, 144 

Pedersen, K.: EM+NS-FrM4, 183 

Pegalajar-Jurado, A.: MB+BI-ThM3, 158 

Pei, D.: EM-ThP10, 175; EM-ThP11, 175 

Pei, L.: LB+EM+GR+MN+TR-WeA3, 146 

Peixoto, T.: SS+EM-WeA11, 149; SS-TuP21, 

129; TF+AS+SS-ThA3, 171 

Pelant, I.: NS-MoM5, 86 

Pelissier, B.: NM+NS+MS+EM-MoA6, 95 

Pelleymounter, D.: PS-ThP39, 179 

Pelster, A.: AS-TuP1, 124 

Peng, G.: SS-MoA7, 98; SS-TuP1, 129 

Peng, Q.: EN+SS-FrM3, 184 

Peng, W.: EM+TF-WeM4, 133; EN+TF- 

WeA7, 144 

Perdue, S.M.: SP+AS+BI+ET+MI+NS-TuA3, 

119 

Perea, D.E.: AS+NS+SS+TF-WeA3, 143; 

AS+NS+SS+TF-WeA4, 143; NS-WeA10, 

147 

Pereira, L.: AC+TF+SS+MI-MoA6, 91 

Pereira, M.: AC+EN-TuM5, 102 

Pereira, S.: BI-MoM5, 83 

Perera, A.G.U.: EM+TF+AS-ThA9, 167; EM- 

ThP6, 175 

Peres, P.: IS+AS+OX+ET-WeM11, 135 

Perez Medina, G.J.: GR+EM+ET+NS+TF- 

MoA7, 94 

Pérez Quintero, K.J.: MN+AS-MoM3, 85 

Perez Roldan, MJ.: NS+EN+GR-TuA2, 117 

Perez, R.: SP+AS+BI+ET+MI+NS-TuA10, 

119; SP+AS+BI+ET+MI+NS-TuA11, 

119 

Pérez, R.: SS-ThA7, 171 

Perez, V.P.: BI-TuP8, 125 


Perkins, F.K.: TF+AS-TuA3, 120 

Perng, Y.-C.: EM+TF+AS-ThA3, 167; 

EN+NS-ThM6, 156 

Pernites, R.B.: EN+NS-ThM12, 156 

Perrenoud, J.: TF+AS-WeA3, 151 

Perret, E.: IS+AS+OX+ET-WeM3, 135 

Perrier, P.: MN-TuP1, 126 

Perrine, K.A.: AS-TuP20, 124; SS-ThA1, 

171; SS-ThA2, 171; SS-WeM11, 138 

Perriot, R.: GR+AS+EM+MI+MN-TuM10, 

105 

Perry, J.W.: SS-TuP14, 129 

Perry, S.S.: BI+AS-TuA10, 113; TR+BI- 

TuM2, 110; TR+SE-WeM5, 140; TR- 

TuA7, 121 

Persson, M.: SS-MoA11, 98 

Persson, O.: ET+NS+EM-ThM6, 157 

Pertsin, A.J.: BI+SS+AS-TuM2, 103 

Pesin, D.: EM+OX-WeA1, 144 

Petaccia, L.: AC+TF+SS+MI-MoA3, 91; GR- 

ThP3, 176 

Petersen Barbosa Lima, L.: EM-ThP7, 175 

Petersen, E.: NS+AS+SS+SP-WeM2, 136 

Peterson, B.: NM+AS+MS-MoM3, 86 

Peterson, K.: PS-ThA4, 170 

Petford-Long, A.: IS+AS+BI+ET+GR+NS- 

TuA7, 116 

Pethe, S.: EN+TF-TuM11, 104; TF+AS- 

WeA11, 151 

Petrik, N.G.: SS+EN+OX-ThM3, 161; 

SS+EN+OX-ThM5, 161; SS-TuM5, 109; 

SS-TuM6, 109 

Petrosky, J.C.: AC+TF+SS+MI-MoA1, 91; 


Petrov, I.: TF+AS-TuA4, 120; TF+NS+EM- 

ThM12, 163 

Petrovykh, D.Y.: AS-TuP11, 124; BI+AS- 

TuA7, 113 

Petterson, M.K.: GR+EM+ET+MS+NS- 

FrM11, 185 

Pettit, C.: EN+TF-TuM9, 104 

Pfeiffer, D.: EM+NS-FrM10, 183 

Pham, C.D.: TF+NS+EM-ThM6, 163 

Pham, H.: TC+EM+AS+TF+EN-ThM11, 162 

Pham, T.: PS2-TuM2, 108 

Phan, M.H.: MI-ThP2, 177; NS-MoM8, 86; 

NS-MoM9, 86 

Phaneuf, M.W.: HI-ThP3, 177 

Phaneuf, R.J.: TF+EM+SS-ThA10, 172; TF- 

MoM3, 89 

PhanVu, H.: PS2-TuM10, 108 

Phillipp, F.: IS+AS+OX+ET-WeM5, 135 

Phillpot, S.R.: EN+SS-FrM6, 184; 


127; OX-TuP3, 127; OX-TuP4, 127; 

SS+NS-ThA4, 170; TR+BI-TuM10, 110; 

TR-TuP1, 130 

Piallat, F.: NM+NS+MS+EM-MoA6, 95 

Piao, H.: AS+BI-TuM12, 102; AS+TF+VT- 

FrM1, 183 

Pierce, C.C.: TF-ThP5, 180 

Pillatsch, L.: HI+AS+NS-WeA10, 146 

Pimenta-Barros, P.: PS2-TuM5, 108 

Pinna, N.: TF+NS+EM-ThM9, 163 

Pioda, A.: EW-TuL6, 111 

Pipe, K.P.: EM+SS+AS+NS-ThM13, 155 

Pireaux, J.J.: AS-MoA2, 91 

Pitenis, A.A.: TR-TuA9, 121 

Pittenger, B.: SP+AS+BI+ET+MI+TF-WeA8, 

149 

Pitters, J.: 


WeM2, 137 

Pitters, J.L.: HI+AS+NS-WeA7, 146 

Piva, P.: 


WeM2, 137 

Plaue, J.: AC+EN-TuM10, 102 

Pleticha, D.: EN-ThP3, 175

Pluchery, O.: EM+NS-FrM3, 183 

Pluntze, A.M.: TR+SE-WeM12, 140 

Poda, A.: TR+SE-WeM10, 140 

Podkolzin, S.: SS-WeA10, 150 

Podraza, N.J.: 


MoM1, 83; 


MoM4, 83 

Poelker, M.: VT-MoM5, 90; VT-TuP16, 130 

Poelsema, B.: HI+AS+NS-WeA3, 146 

Poeppelmeier, K.: TF+EN-MoA1, 98 

Pohl, K.: SS-TuP4, 129 

Pohler, M.: SE+NS-MoM9, 88 

Pointet, J.: OX-TuP2, 127 

Polak, S.: PS-ThA6, 170 

Polcawich, R.: EM-ThM3, 156 

Polcik, P.: SE+PS-TuM10, 108 

Polina, A.: HI+AS+BI+NS-ThM5, 158 

Polly, S.: EN+NS-MoM10, 84 

Polyakov, A.Y.: EM-TuM9, 103 

Ponduri, S.: EN+PS-WeM3, 133 

Ponomarev, M.V.: 


MoM6, 83; TC+EM+AS+TF+EN-ThM2, 

162 

Pontoni, D.: NS+EN+GR-TuA1, 117 

Pookpanratana, S.: TF+EM+SS-ThA6, 172 

Poon, J.: MI+EN+BI-TuA7, 116 

Popov, E.O.: SE+NS-MoA7, 97 

Popovitz-Biro, R.: NS+AS+SS+SP-WeM4, 

136 

Porcher, W.: EN+NS-ThM11, 156 

Porter, D.L.: AC+EN-TuM1, 102 

Porter, L.M.: TC+EM+AS-WeA9, 150 

Portoles, J.F.: 


WeM10, 137 

Posseme, N.: PS2-TuM2, 108 

Postma, A.: BI-MoM1, 83 

Potapenko, D.V.: SS+NS-TuA4, 119 

Potbhare, S.: EM+OX-WeA9, 144 

Pou, P.: SP+AS+BI+ET+MI+NS-TuA11, 119 

Pouliquen, S.: EN+PS-WeM5, 133 

Povey, I.M.: EM+TF+OX+GR-MoA6, 93 

Powell, C.J.: AS-MoM3, 82; AS-MoM6, 82 

Powell, L.J.: IS-TuP3, 126 

Pradeep, N.: NS+SP-MoA8, 95 

Pradelles, J.: PS2-TuM5, 108 

Pradhan, P.: 


MoM1, 83 

Prajapati, A.K.: VT+AS+SS-WeM11, 140 

Prasad, S.V.: LB+EM+GR+MN+TR-WeA1, 

146 

Prater, C.B.: SP+AS+BI+ET+MI+TF-WeA9, 

149 

Premkumar, A.: TF-ThP1, 180 

Proie, R.: EM-ThM3, 156 

Prokes, S.M.: EM+TF+OX+GR-MoA10, 93; 


Proksch, R.: EW-TuM8, 104; 


Prosa, T.J.: AS-TuP18, 124 

Provo, J.L.: AC+TF+SS+MI-MoA4, 91 

Ptschelinzew, N.: EM-ThP14, 175 

Pu, H.: GR+AS+NS+SP+SS-TuA2, 115; SS- 


Pu, Y.K.: PS1-TuA10, 117 

Pulskamp, J.: EM-ThM3, 156 

Purabia, T.: VT+AS+SS-WeM11, 140 

Putkonen, M.: NM+NS+MS+EM-MoA1, 95 

Py, M.: AS-ThM9, 155 

— Q — 

Qiao, L.: OX-TuP5, 127 

Qin, S.Y.: ET+NS+EM-ThM3, 157; 

ET+NS+EM-ThM4, 157 

Qin, X.: EM+TF+OX+GR-MoM5, 84 

Qu, L.: IS-TuP3, 126 

Qu, T.: TF+MI-WeA1, 151 

Quardokus, R.C.: AS-TuP26, 124; 

ET+SS+GR+SP-ThA3, 168 

Quinlan, R.A.: GR+AS+NS+SS-ThM10, 157 

Quiñones-Galván, J.G.: NS-MoM2, 86; TF- 

ThP16, 180 

Quintero, M.: OX-TuP6, 127 

Quinton, J.S.: SS+NS-ThA7, 170 

— R — 

Rack, P.D.: HI-ThP3, 177; NS+SP-MoA4, 

95; TC-ThP4, 180; TF+EM+SE+NS- 

ThM3, 162 

Rader, O.: MI-WeM5, 135 

Radi, A.: TF+AS-TuA10, 120 

Rading, D.: AS-ThM11, 155; AS-WeM11, 

132 

Radja, A.: EL+TF+BI+AS+EM+SS-MoA2, 

92 

Radu, I.: TF-ThP1, 180 

Radue, E.: TF+AS+SS-ThA8, 171 

Radvanyi, E.: EN+NS-ThM11, 156 

Rafaja, D.: SE+NS-MoM3, 88 

Rafati, A.: AS+BI-TuA11, 113 

Rafik, A.: GR+AS+EM+NS+SS-WeA8, 145 

Rago, P.B.: EM+MI-ThA2, 166 

Rahinov, I.: SS-MoM4, 89 

Rahman, T.S.: AS+BI-TuA1, 113; AS+BI- 

TuA3, 113; GR+EM+ET+NS+TF-MoA2, 

94; MI+EN+BI-TuA8, 116; NS+EN+GR- 

TuA7, 117; NS-MoM10, 86; NS-WeA9, 

147; SS+NS-ThA9, 170 

Rai, B.K.: AC+TF+SS+MI-MoA8, 91 

Raigoza, A.: BI-TuP18, 125 

Raitses, Y.: PS2-WeA4, 148; PS-ThP9, 178 

Raj, R.: TF+EN-MoA3, 98 

Raja, L.: PS2-MoA11, 97 

Rajachidambaram, M.S.: 


Rajan, K.: TR+BI-TuM10, 110 

Rajput, P.: AS-ThA7, 166 

Raley, A.: PS-MoM5, 88 

Ralsano, R.: ET+SS+GR+SP-FrM6, 184 

Raman, P.: PS-ThP36, 179; SE+PS-TuM3, 

108 

Raman, S.N.: AS-ThA3, 166; EN+AS-ThA4, 

167 

Raman, T.: GR-ThP8, 176; SS-WeA1, 150 

Ramana, C.V.: NS-ThP13, 178; TF+AS+SS- 

ThA11, 171; TF+AS+SS-ThA9, 171 

Ramasamy, R.: EN+NS-ThM10, 156 

Ramos, R.: PS-ThP7, 178 

Randall, J.N.: NS+SP-MoA7, 95 

Ranga, A.: BI-MoA1, 92 

Rangan, S.: EN+AS-ThA9, 167; 


Ranish, J.: TF+AS-TuA11, 120 

Ranjan, A.: PS2-TuM1, 108; PS-MoM5, 88; 

PS-ThP16, 178 

Ranjan, V.: 


MoM1, 83 

Ranson, P.: MN+AS-MoM6, 85; PS1-ThM3, 

160 

Rao, M.: MN+AS-MoM5, 85 

Rao, M.V.: GR+EM+NS+PS+SS+TF-MoM1, 

85 

Rappe, A.M.: SS+OX-WeM10, 138 

Raschke, M.B.: NS-WeA7, 147 

Raskin, J.-P.: EM-ThM4, 156 

Rasmussen, A.M.H.: SS-ThM5, 161 

Raso, R.: AS+NS+SS+TF-WeA8, 143 

Rathbone, J.: VT-MoA10, 99; VT-TuP2, 130 

Ratner, B.D.: BI+AS-TuA1, 113; 


Rauf, S.: PS2-MoA3, 97; PS2-TuM11, 108 

Ray, R.I.: MB+BI-ThA1, 169 

Raymond, M.: EM+NS-FrM9, 183 

Raynaud, P.: TF+NS+EM-ThM3, 163 

Real, M.: LB+EM+GR+MN+TR-WeA10, 

146 

Rebelo de Figueiredo, M.: SE+NS-MoM6, 88 

Reddemann, L.: TF+EM+SS-ThA9, 172 

Reddy, D.: EM+OX-WeA1, 144 

Reed, D.T.: AC+EN-TuM9, 102 

Reeves, R.: TF+EM+SE+NS-ThM5, 162 

Regan, J.: MB+BI-ThA8, 169 

Register, L.F.: EM+OX-WeA1, 144 

Rehbein, S.: BP+AS-SuA3, 78 

Reid, D.: NS+AS+SS+SP-WeM2, 136 

Reihs, K.: TF+EM+SS-ThA9, 172 

Reilly, M.: EN-ThP11, 175 

Reimhult, E.: NS+EN+GR-TuA1, 117 

Reinhard, D.A.: AS-TuP18, 124 

Reinke, P.: EM+NS-FrM6, 183; EN-ThP1, 

175 

Ren, F.: BI-TuP6, 125; EM-ThP1, 175; EM- 

ThP2, 175; EM-TuM9, 103; 


Ren, H.: PS-ThP35, 179 

Ren, T.: TF+EM+SS-ThA6, 172 

Renaux, F.: PS1-TuA8, 117; SE+NS-MoA4, 

97 

Rendon, E.A.: AS-TuP28, 124 

Reniers, F.: PS+TC-WeM12, 136; PS-ThP2, 

178; PS-ThP31, 179; PS-ThP32, 179; 

SE+NS-MoA4, 97; SE+PS-TuA9, 118 

Reshchikov, M.A.: EM+TF+AS-ThA4, 167 

Resta, A.: GR+EM+NS+SS+TF-ThA6, 169 

Restaino, D.: EM-TuA8, 114 

Reuveny, A.: MN-MoA8, 94 

Revelli, J.C.: EM-ThP4, 175 

Revenko, I.: EW-TuM8, 104; 


Reviakine, I.: BI-MoM10, 83 

Reyes-Morales, J.: TR-TuP5, 130 

Reznicek, A.: 


MoM9, 83 

Rhallabi, A.: AS-MoM4, 82 

Rhim, S.: GR+AS+NS+SP+SS-TuA2, 115 

Ribeiro, F.: TF+EN-MoA1, 98 

Rice, T.: EM+TF+AS-ThA1, 167 

Richardson, C.J.K.: TF+EM+SS-ThA10, 172 

Richmann, M.K.: AC+EN-TuM9, 102 

Richter, C.A.: TF+EM+SS-ThA6, 172 

Richter, R.P.: BI+AS-TuA9, 113; BI+SS+NS- 

WeM10, 132 

Ricker, J.E.: VT-MoM6, 90 

Riddle, Y.: TR+SE-WeM5, 140 

Riedel, S.: PS2-TuM12, 108 

Riedl, B.: PS+BI-MoA11, 96 

Rieth, L.W.: TF-WeM2, 139 

Rigby-Singleton, S.: BI+SS+AS-TuM1, 103 

Rimal, S.: PS-WeM5, 137 

Rinzler, A.G.: GR+EM+ET+MS+NS-FrM11, 

185 

Rittschof, D.: MB+BI-ThA6, 169 

Ritz, E.: TC+EM+AS+TF+EN-ThM12, 162 

Rizzo, A.: AC+TF+SS+MI-MoA3, 91 

Roach, W.M.: VT+AS+SS-WeM10, 140; 


WeM9, 140 

Robbins, M.O.: TR-TuA1, 121 

Roberts, A.J.: AS+BI-TuM10, 102; AS+BI- 


AS-TuP13, 124 

Roberts, C.J.: BI+SS+AS-TuM1, 103; 

BI+SS+NS-WeM12, 132; 


Roberts, N.A.: NS+SP-MoA4, 95; 


Robertson, J.: EM+TF+OX+GR-MoM10, 84 

Robinson, J.T.: GR+AS+BI+PS+SS-WeM5, 




Robinson, M.: BN+AS-WeA4, 143 

205 Author Index

Robinson, Z.R.: GR+AS+NS+SP+SS-TuA11, 


Robson, M.: PS-MoM1, 88; PS-MoM9, 88 

Roca i Cabarrocas, P.: 


MoM3, 83 

Rockett, A.: TF+NS+EM-ThM12, 163 

Rodenhausen, K.B.: 

EL+TF+BI+AS+EM+SS-MoA1, 92 

Rodgers, M.: EM-ThP8, 175 

Rodriguez de Anda, E.: TR-TuP5, 130 

Rodriguez Perez, A.: 


Rodriguez, E.: TR-TuP6, 130 

Rodriguez, G.: MN-TuP3, 126 

Rodriguez, L.N.J.: IS+AS+OX+ET-WeM9, 

135 

Rodriguez-Santiago, V.: PS+TC-WeM11, 136 

Rogalev, A.: SS+OX-WeM5, 138 

Rogers, B.R.: SS+OX-WeM4, 138; SS-TuP5, 


Rogers, J.A.: EM+SS+AS+NS-ThM5, 155 

Rogström, L.: TF+NS+EM-ThM11, 163 

Rohrer, G.: EM-TuA7, 114 

Rojas, G.: NS+AS+SS+SP-WeM11, 136 

Roldan Cuenya, B.: SS+NS-ThA8, 170; 

SS+NS-TuA7, 119; SS-TuP25, 129; SS- 


Roldan Cueyna, B.: SS-TuP28, 129 

Romm, L.: PS-WeM12, 137 

Romriell, N.R.: TF+EM+SS-ThA8, 172 

Ronkainen, H.: TF+NS+EM-ThM10, 163 

Ronsheim, P.: EM+NS-FrM10, 183 

Roodenko, K.: EL+TF+BI+AS+EM+SS- 

MoA2, 92; SS-TuP21, 129 

Roozeboom, F.: TF-TuM11, 109; TF-TuM5, 

109 

Rosa, L.: GR+EM+ET+NS+TF-MoA7, 94 

Rose, M.: VT-TuM9, 110 

Rose, V.: MI+SP+AS-ThM1, 159 

Rosenauer, A.: NS+AS+SS+SP-WeM3, 136 

Rosenberg, R.A.: MI+SP+AS-ThM12, 159 

Rosenfeld, D.H.: TF+AS-WeA1, 151 

Rosenhahn, A.: BI-TuP14, 125; BI-TuP16, 

125; BN+AS-WeA11, 143; IS-TuP4, 126; 

MB+BI-ThA3, 169 

Rosenmann, D.: MI+SP+AS-ThM12, 159 

Ross, F.M.: GR+EM+NS+PS+SS+TF- 

MoM8, 85 

Ross, N.: PS-WeM5, 137 

Rossi, F.: BI+SS+AS-TuM12, 103; 

NS+EN+GR-TuA2, 117 

Rosslee, C.: PS2-TuM2, 108 

Rossnagel, S.M.: TF2-TuA3, 120 

Rosso, K.M.: NS-ThM2, 159 

Rotello, V.: BI+SS+NS-WeM3, 132 

Rotenberg, E.: GR+EM+ET+NS+TF-MoA8, 

94 

Rougemaille, N.: GR+AS+EM+NS+SS- 

WeA10, 145 

Rousseau, R.: SS+EN+OX-ThM5, 161 

Roussel, P.: AC+EN-TuM3, 102 

Routaboul, L.: GR+EM+ET+NS+TF-MoA7, 

94 

Rowe, J.E.: GR+AS+BI+PS+SS-WeM10, 


GR+EM+ET+MS+NS-FrM8, 185; GR- 

ThP11, 176; MI+OX-WeA11, 147 

Roy, A.K.: SE-TuP3, 128 

Roy, K.: MI-ThP3, 177 

Roy-Garofano, V.: PS+TC-WeM1, 136 

Rozen, J.: EM+TF+OX+GR-MoA7, 93 

Rubio-Zuazo, J.: AS+TF+VT-FrM5, 183 

Rubloff, G.W.: EN+AS-ThA3, 167; TF+EN- 

MoA6, 98; TF-MoM3, 89 

Ruda, K.: EW-WeL5, 142 

Rudolph, M.: PS2-TuM12, 108 

Rudy, A.: TR+BI-TuM2, 110 

Ruffo, M.: TF-WeM1, 139 

Ruggieri, C.: OX+SS+TF+MI-MoA6, 96 

Rumbach, P.: PS+EM-MoM11, 87 

Ruocco, A.: AC+TF+SS+MI-MoA3, 91 

Ruoff, R.S.: GR+AS+NS+SP+SS-TuA11, 


Ruppalt, L.: EM+TF+OX+GR-MoA10, 93 

Rusu, C.: PS-MoM11, 88 

Rutt, H.N.: HI+AS+BI+NS-ThM3, 158 

Ruzic, D.N.: EN-ThP11, 175; PS-ThP36, 179; 

SE+PS-TuM3, 108; SE+PS-TuM4, 108; 


Ryadnov, M.G.: BI+SS+AS-TuM11, 103 

Ryan, E.T.: EM-TuA11, 114; EM-TuA8, 114 

Ryan, K.E.: TR-TuA8, 121 

Rye, M.J.: AS-TuP5, 124 

Rysz, J.: TF+AS+SS-ThA2, 171 

Ryu, S.: AS+NS+SS+TF-WeA10, 143 

Ryzhkov, M.V.: AC+MI+SS+TF-MoM9, 82 

— S — 

Sabitova, A.: EM+TF+AS-ThA10, 167 

Sabnis, V.A.: EN+TF-TuA9, 114 

Sachdev, H.: GR-ThP3, 176 

Sadowski, J.T.: GR-ThP11, 176; 


Safron, N.: GR+AS+EM+NS+SS-WeA9, 145 

Sahalov, H.: EM+NS-FrM6, 183 

Saini, K.K.: BI-TuP17, 125; NS-MoM11, 86 

Saito, N.: GR-ThP7, 176; NS-ThP11, 178; 

NS-ThP4, 178; NS-ThP8, 178; PS-ThP29, 

179 

Saito, S.: MN-TuP9, 126 

Saito, Y.: VT-TuA10, 121 

Saitoh, E.: IS+AS+OX+ET-WeM10, 135 

Sakai, M.: SS-TuP18, 129 

Sakai, Y.: AS-ThM12, 155; AS-TuP6, 124 

Sakakibara, R.: MN-TuM11, 106 

Sakalas, P.: GR+AS+NS+SS-ThM2, 157 

Sakamoto, K.: MI-WeM1, 135 

Sakurai, M.: GR+AS+EM+NS+SS-WeA12, 

145 

Salaün, A.: TF+MI-WeA7, 151 

Salditt, T.: IS-TuP4, 126 

Sales, B.C.: SP+AS+BI+ET+MI+NS-TuA12, 

119 

Salib, D.: 


WeM5, 137 

Salmeron, M.: SS-ThA7, 171 

Salter, T.L.: AS-MoA9, 91 

Saly, M.J.: TF+NS+EM-ThM2, 163 

Samala, S.K.: TF+AS+SS-ThA9, 171 

Samaraweera, R.L.: EM+TF+AS-ThA11, 

167; EM+TF+AS-ThA9, 167 

Samuelson, L.: ET+NS+EM-ThM6, 157 

Samukawa, S.: EN+PS-WeM11, 133; MN- 

TuP4, 126; PS1-TuA9, 117; PS2-ThM10, 

160; PS2-ThM11, 160; PS2-ThM9, 160; 

PS-MoM6, 88 

Sánchez-Portal, D.: SS-ThA7, 171 

Sanderson, D.: VT-TuP6, 130 

Sandin, A.A.: GR+AS+BI+PS+SS-WeM10, 


GR+EM+ET+MS+NS-FrM8, 185; GR- 

ThP11, 176; MI+OX-WeA11, 147 

Sanghadasa, M.: MN-MoA6, 94; MN-TuM6, 

106 

Sangiovanni, D.G.: TF+AS-TuA4, 120; 

TF+AS-TuA9, 120 

Sankaran, R.M.: PS+EM-MoM11, 87; 

PS+EM-MoM8, 87 

Sankarapandian, M.: PS-ThP1, 178 

Sano, N.: AS-MoA1, 91; AS-TuP4, 124 

Santana, J.: MI+OX-WeA10, 147 

Santeufemio, C.: AS+BI-TuA10, 113 

Santos, P.V.: NS+SP-MoA9, 95 

Santoyo-Salazar, J.: NS-MoM2, 86 

Saraf, S.: SS-TuP12, 129 

Saranu, S.: EW-WeL1, 142 

Sardela, M.: TF+NS+EM-ThM12, 163 


Sarkar, A.: EL+TF+AS+EM+SS-TuP1, 125 

Sarkissan, A.: PS+BI-MoA11, 96 

Sarkissian, A.: PS+TC-WeM1, 136 

Sasaki, M.: MN-TuP5, 126; PS-ThP8, 178 

Sasi-Szabo, L.A.: IS+AS+BI+ET+GR+NS- 

TuA3, 116 

Sato, S.: HI+AS+BI+NS-ThM6, 158; NM- 

TuP1, 127 

Sauer, V.T.K.: MN+AS-MoM9, 85; MN- 

MoA7, 94; MN-TuM5, 106; MN-TuM9, 

106 

Saulnier, N.: PS2-TuM9, 108 

Saurabh, S.: IS-TuP3, 126 

Sawai, K.: MN-TuP9, 126 

Sawatzky, G.: TF+AS-TuA10, 120 

Sawyer, W.G.: TR+BI-TuM10, 110; TR+SE- 

WeM9, 140; TR-TuA3, 121; TR-TuA9, 

121 

Scarel, G.: TF+EN-MoA7, 98 

Schaafhausen, S.: EM+TF+AS-ThA10, 167 

Schaekers, M.: TF-ThP1, 180 

Schafer, K.C.: IS+AS+BI+ET+GR+NS- 

TuA3, 116 

Schafer, S.: MI+OX-WeA2, 147 

Schäfer, S.: EM+MI-ThA11, 166 

Schamberger, F.: PS1-WeA10, 148 

Schanze, K.: MB+BI-ThM9, 158 

Scheele, M.: SS-MoM2, 89 

Schein, M.: VT-TuA3, 121; VT-TuP6, 130 

Scheltjens, G.: SE+PS-TuA9, 118 

Schlaf, R.: ET+SS+GR+SP-ThA10, 168; 


TF+EM+SS-ThA11, 172 

Schlesser, R.: EM+TF+AS-ThA1, 167 

Schlögl, M.: SE+NS-MoM5, 88; SE+NS- 

MoM6, 88 

Schlueter, J.A.: NS+AS+SS+SP-WeM11, 136 

Schmid, A.K.: GR+AS+EM+NS+SS-WeA10, 

145 

Schmidt, A.B.: MI-WeM1, 135 

Schmidt, D.: EL+TF+BI+AS+EM+SS- 

MoA1, 92 

Schmidt, W.G.: SS-TuP21, 129 

Schmitt, J.: OX+EM+MI+NS+TF-MoM10, 

87 

Schmitz, A.: GR+EM+ET+MS+NS-FrM3, 

185 

Schnadt, J.: IS+AS+SS+EN-TuM12, 105 

Schneider, C.M.: MI+OX-WeA1, 147 

Schneider, G.: BP+AS-SuA3, 78 

Schneider, J.M.: SE+NS-MoM8, 88 

Schnekenburger, J.: AS+BI-TuM1, 102 

Schneller, E.: EN+TF-TuM11, 104 

Schoenfeld, W.V.: NM+NS+MS+EM-MoA9, 

95; TF+AS-WeA7, 151; TF+AS-WeA9, 

151 

Schofield, M.: GR+AS+NS+SP+SS-TuA2, 


Schreiber, D.: MN-MoA8, 94 

Schrimpf, R.D.: EM+SS+AS+NS-ThM11, 

155 

Schröder, U.: GR+AS+NS+SP+SS-TuA7, 

115 

Schubert, E.: EL+TF+BI+AS+EM+SS- 

MoA1, 92 

Schubert, E.F.: TF+SE+NS-WeM1, 139 

Schubert, M.: EL+TF+BI+AS+EM+SS- 

MoA1, 92; LB+EM+GR+MN+TR- 

WeA10, 146 

Schuengel, E.: EN+PS-WeM12, 133; EN+PS- 

WeM9, 133 

Schuhmacher, M.: IS+AS+OX+ET-WeM11, 

135 

Schuller, I.: AS+TF+VT-FrM2, 183 

Schulte, K.: GR+AS+NS+SP+SS-TuA7, 115 

Schultz, B.D.: EM+MI-ThA10, 166; EM+MI- 

ThA6, 166 

Schultz, J.A.: BN+AS-WeA12, 143

Schulze, J.: EN+PS-WeM12, 133; EN+PS- 

WeM9, 133 

Schulze, R.K.: EM+NS-FrM11, 183 

Schwab, Y.: TF+EN-MoA7, 98 

Schwaederle, L.: PS+EM-MoM3, 87 

Schwartz, C.: EM-ThP1, 175 

Schwartz, T.: MB+BI-ThA3, 169 

Schwarz, U.D.: SP+AS+BI+ET+MI+NS- 

TuA10, 119 

Schweigert, D.: PS-ThP10, 178 

Schweigert, I.: PS-ThP17, 178 

Schweikert, E.: AS-ThM5, 155 

Schwendemann, T.C.: 


Schwerdtle, T.: AS-TuP1, 124 

Scott, D.J.: BI+SS+AS-TuM1, 103 

Scott, T.B.: AC+TF+SS+MI-MoA6, 91 

Scurr, D.J.: BI-MoA8, 92; BN+AS-WeA10, 

143 

Seah, M.P.: AS-ThA2, 166 

Seal, S.S.: AS+BI-TuA12, 113; BI-TuP11, 

125; BI-TuP13, 125; BI-TuP7, 125; BI- 

TuP8, 125; MN-TuP6, 126; 

NS+AS+SS+SP-WeM2, 136; SS-TuP12, 


Sedlmaier, J.: AS-WeM6, 132 

Seebauer, E.G.: SS+EM-WeA7, 149; 

SS+EN+OX-ThM4, 161 

Seeger, S.: NS-ThP1, 178 

Sefa, M.: VT-TuP3, 130 

Sefat, A.S.: SP+AS+BI+ET+MI+NS-TuA12, 

119 

Seitz, O.: EL+TF+BI+AS+EM+SS-MoA2, 

92; EM+NS-FrM3, 183; EM+TF-WeM4, 

133; EN+TF-WeA7, 144 

Seki, T.: AS-ThM9, 155 

Sekiguchi, A.: NM+MS-TuM1, 106 

Sekine, M.: GR+AS+NS+SS-ThM9, 157; 

PS1-TuM5, 107; PS2-MoA7, 97; PS2- 

ThM5, 160; PS2-TuA7, 118; PS2-WeA3, 

148; PS-ThP14, 178; PS-ThP25, 179 

Sellers, J.R.V.: SS-TuM12, 109 

Selvamanickam, V.: EN+TF-TuA8, 114 

Sementa, L.: SS+OX-WeM12, 138 

Semetey, V.: MB+BI-ThM2, 158 

Semidey-Flecha, L.: GR+AS+EM+NS+SS- 

WeA11, 145 

Semonin, O.E.: EN+NS-MoM3, 84 

Senevirathna, M.K.I.: EM+TF+AS-ThA11, 

167; EM+TF+AS-ThA9, 167; EM-ThP6, 

175 

Senkbeil, T.: BN+AS-WeA11, 143; IS-TuP4, 

126 

Senor, D.J.: AC+EN-TuM1, 102 

Seo, B.H.: PS-ThP4, 178 

Seo, H.: EN+NS-MoM2, 84 

Seo, H.-C.: GR+EM+ET+MS+NS-FrM3, 185 

Seo, J.: NS-ThP9, 178 

Seo, J.M.: SS-TuP9, 129 

Seo, J.-W.T.: NS+EN-TuM12, 107 

Seo, S.C.: PS2-TuM6, 108 

Seo, S.J.: AS-TuP22, 124 

Seog, J.: PS+BI-MoA2, 96; PS+BI-MoA6, 96 

Seong, D.J.: PS-ThP4, 178 

Serov, A.: IS+AS+SS+EN-TuM6, 105 

Sershen, M.J.: PS1-TuA11, 117; TF-WeM1, 

139 

Setina, J.: VT-MoM8, 90 

Šetina, J.: VT-MoA1, 99; VT-MoA7, 99; VT- 

TuP3, 130 

Setsuhara, Y.: PS1-TuM5, 107 

Setvin, M.: ET+SS+GR+SP-ThA9, 168; 


Seyhan, A.: NS+EN-TuM5, 107 

Seyller, Th.: GR+EM+ET+NS+TF-MoA8, 


Sgammato, B.: AS-TuP10, 124 

Shaat, S.K.: SS+OX-WeM11, 138 

Shacham-Diamand, Y.: MN+AS-MoM10, 85; 

MN-MoA8, 94 

Shafai, G.: NS-MoM10, 86 

Shafarman, W.N.: EN+TF-TuM3, 104 

Shafiq, N.: GR+AS+BI+PS+SS-WeM2, 134 

Shaifai, G.: SS+NS-ThA9, 170 

Shakouri, A.: SE+NS-MoA8, 97 

Shalimov, A.: SE+NS-MoM2, 88 

Sham, T.K.: AS+TF+VT-FrM1, 183 

Shan, J.: SS-TuP19, 129; SS-TuP38, 129 

Shannon, S.: SE+PS-TuA3, 118; SE+PS- 

TuA4, 118 

Shao-Horn, Y.: IS+AS+SS+EN-TuM5, 105 

Sharad, M.: MI-ThP3, 177 

Shard, A.G.: AS-ThA2, 166; AS-ThM4, 155 

Sharifi, F.: MI-WeM11, 135 

Sharipov, F.: VT-TuM3, 110; VT-TuM4, 110 

Sharma, G.: AS-ThA7, 166 

Sharma, K.: TC+EM+AS+TF+EN-ThM2, 

162 

Sharma, M.: OX+EM+MI+NS+TF-MoM10, 

87 

Sharp, T.: TR-TuA1, 121 

Shea, M.J.: EN+TF-TuA3, 114 

Shearer, J.C.: SE+NS-MoA6, 97 

Sheehan, J.P.: PS2-WeA4, 148 

Sheehan, P.E.: GR+AS+BI+PS+SS-WeM5, 


GR+AS+NS+SS-ThM3, 157; GR-ThP9, 

176 

Shelton, W.A.: MI-ThP4, 177 

Shemelya, C.M.: EN+NS-ThA2, 168 

Shen, G.: ET+NS+EM-ThM11, 157; NS+EN- 

TuM3, 107; NS-ThM11, 159 

Shen, J.: EN+TF-TuM10, 104 

Shen, M.: EN+SS-FrM2, 184 

Shen, Z.X.: AS+BI-TuA2, 113; AS+BI- 

TuA4, 113 

Sheng, J.: EN+NS-MoM10, 84 

Shenogin, S.V.: SE-TuP3, 128 

Shepard, K.L.: GR+EM+ET+NS+TF- 

MoA10, 94 

Sherwood, P.M.A.: AS-MoM8, 82 

Shetty, R.: SP+AS+BI+ET+MI+TF-WeA9, 

149 

Shi, Y.: SS-ThA7, 171 

Shi, Z.: EM+TF-WeM5, 133; NS-ThP2, 178 

Shibata, K.: VT-TuA1, 121 

Shigekawa, H.: NS-ThM5, 159 

Shih, C.: ET+NS+EM-ThM3, 157 

Shikano, T.: GR+AS+EM+NS+SS-WeA12, 

145 

Shimada, K.: MI-WeM1, 135; NM-TuP1, 

127; SS-TuP33, 129; TF-ThP12, 180 

Shimbori, S.: PS2-ThM3, 160 

Shimizu, H.: BI+SS+NS-WeM11, 132; VT- 

TuP8, 130 

Shimizu, T.: NM-TuP3, 127; PS2-ThM3, 160 

Shimizu, T.K.: SS-ThM12, 161 

Shin, B.G.: GR-ThP6, 176; SS+NS-ThA3, 

170 

Shin, H.: GR+EM+NS+PS+SS+TF-MoM4, 

85; NS-ThP9, 178; PS-MoM8, 88 

Shin, H.-J.: GR+EM+NS+PS+SS+TF- 

MoM11, 85 

Shin, K.-S.: MN+AS-MoM8, 85 

Shin, N.: NS+EN-TuM4, 107; NS-WeA11, 

147 

Shin, Y.-G.: MN+AS-MoM8, 85 

Shin, Y.J.: EM-TuM10, 103 

Shiradkar, N.: EN+TF-TuM11, 104 

Shirai, M.: VT-TuA1, 121 

Shirakura, A.: SE-TuP2, 128 

Shiratani, M.: EN+NS-MoM2, 84; PS1- 

TuM5, 107 

Shirato, N.: MN-TuP6, 126 

Shirayama, Y.: PS2-ThM3, 160 

Shirazi, M.: TF-TuM3, 109 

Shivashankar, S.A.: AS-TuP23, 124 

Shkel, Y.: EM-ThP11, 175 

Shklovsky, J.: MN+AS-MoM10, 85 

Shkovsky, J.: MN-MoA8, 94 

Shohet, J.L.: EM-ThP10, 175; EM-ThP11, 

175; EM-ThP9, 175; EM-TuA10, 114; 

PS-ThA10, 170; PS-ThP33, 179; PS- 

ThP35, 179 

Shojaei, B.: EM+MI-ThA6, 166 

Sholl, D.: GR+AS+EM+NS+SS-WeA11, 145 

Shong, B.: SS+EM-WeA8, 149 

Short, R.D.: PS+BI-MoA7, 96; PS-ThA8, 170 

Short, R.T.: VT-MoA8, 99 

Shukla, N.: SS-ThM2, 161 

Shuptar, M.: VT-TuA3, 121; VT-TuP6, 130 

Shutthanandan, V.: AS+NS+SS+TF-WeA4, 

143; HI-ThP2, 177; MI-ThP4, 177; NS- 

ThP13, 178; OX-TuP6, 127; SS+EN+OX- 

ThM11, 161 

Shyam, R.: SS+OX-WeM3, 138 

Sibener, S.J.: EM+TF-WeM12, 133 

Sie, C.Y.: PS-ThP46, 179 

Siebentritt, S.: EN+TF-TuM5, 104 

Siekhaus, W.J.: AC+EN-TuM10, 102; 

AC+EN-TuM6, 102 

Sijbrandij, S.: HI+AS+NS-WeA10, 146 

Sikorski, E.M.: PS1-ThM12, 160; PS-MoM2, 

88; PS-WeM10, 137 

Silbaugh, T.L.: SS-WeM6, 138 

Siligardi, G.: BI+SS+AS-TuM12, 103 

Sillassen, M.: BI-MoM11, 83 

Silva, A.: EM+NS-FrM4, 183 

Silva, A.R.: TF-ThP11, 180 

Silva, S.: BI-TuP6, 125 

Silver, R.: NS+SP-MoA8, 95 

Silverstein, R.: EN+TF-MoA10, 93 

Simanullang, M.: NS+EN-TuM5, 107 

Simchenko, S.V.: SS+EN+OX-ThM12, 161 

Simmons, J.: NM+AS+MS-MoM5, 86 

Simmons, M.Y.: NS-MoM3, 86 

Simon, C.: BI-MoA6, 92 

Simons, D.S.: AS+BI-TuA9, 113 

Simons, M.T.: TF+AS+SS-ThA8, 171 

Singh, A.: TF+MI-WeA3, 151 

Singh, U.: MN-TuP6, 126 

Sinha, H.: EM-ThP9, 175 

Sinno, T.: EM-ThM12, 156 

Sinnott, S.B.: EN+SS-FrM6, 184; 


127; OX-TuP3, 127; OX-TuP4, 127; PS- 

ThP11, 178; SS+NS-ThA4, 170; TR+BI- 

TuM10, 110; TR-TuA3, 121; TR-TuP1, 

130 

Sinsabaugh, S.L.: EN+NS-ThM12, 156 

Sirringhaus, H.: TC+EM+AS+TF+EN-ThM9, 

162 

Sit, J.C.: MN-MoA7, 94 

Sitar, Z.: EM+TF+AS-ThA1, 167 

Sivaram, S.: NS-WeA11, 147 

Siviero, F.: VT-TuM12, 110 

Sivula, K.: IS+AS+SS+EN-TuM3, 105 

Siwak, N.: MN-MoA10, 94 

Skomski, D.: SS+NS-ThA11, 170 

Skuza, J.R.: VT+AS+SS-WeM6, 140 

Slattery, A.D.: SS+NS-ThA7, 170 

Sleiman, H.: NS+EN+GR-TuA3, 117 

Smart, L.: VT-MoM11, 90 

Smekal, W.: AS-MoM3, 82; AS-MoM6, 82 

Smentkowski, V.S.: AS-TuP18, 124 

Smets, A.H.M.: EN+PS-WeM10, 133 

Smirnov, N.B.: EM-TuM9, 103 

Smith, S.: AS-ThM4, 155 

Smith, S.R.: SS-ThA3, 171 

Smolenski, K.W.: VT+AS+SS-WeM2, 140; 

VT-TuA11, 121 

Smoot, M.R.: AC+EN-TuM5, 102 

Snow, A.W.: TF+AS-TuA3, 120 

Snyders, R.: PS1-TuA8, 117; SE+NS-MoA4, 

97 

Sobolewski, M.A.: PS1-TuM1, 107 

207 Author Index

Soda, E.: PS-ThP1, 178; PS-WeM4, 137 

Sodeman, I.: EM+OX-WeA1, 144 

Söderlind, P.A.: AC+MI+SS+TF-MoM1, 82 

Soffa, W.A.: TF+MI-WeA4, 151 

Sohn, Y.H.: EN+TF-TuM10, 104 

Sojoudi, H.: GR+EM+ET+MS+NS-FrM9, 

185; GR-ThP10, 176 

Sokolov, I.: MN+AS-MoM10, 85 

Solanki, N.: EW-WeL3, 142 

Solzbacher, F.: TF-WeM2, 139 

Song, E.B.: EM+SS+AS+NS-ThM11, 155 

Song, I.: GR+EM+NS+PS+SS+TF-MoM4, 

85; NS+EN-TuM1, 107 

Song, I.Y.: AS+BI-TuM9, 102 

Song, S.-H.: AS-WeM3, 132 

Song, Y.-B.: SS-TuP9, 129 

Sonntag, M.D.: NS-ThP3, 178 

Sorescu, D.C.: SS-ThA8, 171 

Sorini, A.: EN+SS-FrM5, 184 

Sosolik, C.E.: SS+OX-WeM3, 138; SS- 


Sotres, J.: BI+SS+AS-TuM3, 103 

Sottos, N.R.: SE+NS-MoA10, 97 

Soudi, A.: ET+NS+EM-ThM12, 157 

Sousa, C.: AS-TuP11, 124; BI+AS-TuA7, 

113 

Sowa, M.J.: PS1-TuA11, 117 

Sozias, S.: PS+EM-MoM3, 87 

Spampinato, V.: NS+EN+GR-TuA2, 117 

Spanier, J.E.: NS+EN-TuM6, 107 

Spatz, J.P.: BI-MoM3, 83 

Speck, J.: EM-ThM9, 156 

Spemann, D.: GR+AS+EM+MI+MN-TuM9, 

105 

Spencer, N.D.: NS+SP-MoA2, 95 

Spencer, S.: AS-ThM4, 155 

Spies, M.: EL+TF+BI+AS+EM+SS-MoA9, 

92 

Spooner, T.: PS2-TuM9, 108 

Sreenivasan, R.: PS2-TuM6, 108 

Sridhar, S.: PS-MoM8, 88 

Srikanth, H.: MI+OX-WeA9, 147; MI-ThP2, 

177; NS-MoM8, 86; NS-MoM9, 86; 


Srinadhu, E.S.: SS+OX-WeM3, 138 

Srinivasan, S.: PS2-TuM11, 108 

Sriraman, K.: SP-TuP1, 128 

Sriraman, S.: PS-MoM11, 88 

Srivastava, A.K.: PS2-TuA3, 118 

Srivastava, N.: GR+AS+NS+SP+SS-TuA10, 

115 

Srivastava, R.: PS-ThP1, 178; PS-WeM1, 

137; PS-WeM4, 137 

Stach, E.: TF+EN-MoA1, 98 

Stadermann, M.: IS+AS+OX+ET-WeM6, 135 

Stafford, L.: PS+BI-MoA10, 96; PS+BI- 

MoA11, 96; PS+TC-WeM1, 136; PS+TC- 

WeM6, 136; PS1-WeA9, 148 

Stair, P.C.: OX+SS+TF+MI-MoA3, 96; 


Standaert, T.: PS2-TuM6, 108 

Starostin, S.A.: PS+TC-WeM2, 136 

Startsev, E.A.: PS2-MoA10, 97; PS2-MoA9, 

97 

Stchakovsky, M.: TC-ThP2, 180 

Steele, B.: GR+AS+EM+MI+MN-TuM10, 

105 

Steele, D.A.: PS+BI-MoA7, 96; PS-ThA8, 

170 

Stefani, G.: AC+TF+SS+MI-MoA3, 91 

Stein, K.: PS2-TuM6, 108 

Stein, M.J.: IS+AS+BI+ET+GR+NS-TuA1, 

116 

Steiner, M.: MI+SP+AS-ThM12, 159 

Steiner, M.A.: TF+MI-WeA4, 151 

Steiner, M.B.: NS+EN-TuM9, 107 

Stenger, B.: NS-ThM6, 159 

Stephan, E.: AS+NS+SS+TF-WeA10, 143 

Stern, L.A.: HI-ThP3, 177 

Stevanovic, A.: SS+EN+OX-ThM6, 161 

Stevie, F.A.: AS+BI-TuA10, 113 

Stickle, W.F.: AS-ThA1, 166 

Stillahn, J.: PS-ThP1, 178; PS-WeM4, 137 

Stine, R.: GR+AS+BI+PS+SS-WeM5, 134; 

GR+AS+BI+PS+SS-WeM9, 134; 


Stock, S.R.: AS-WeM9, 132 

Stoddart, P.R.: MB+BI-ThA4, 169 

Stojak, K.: NS-MoM9, 86 

Stolbov, S.: EN+NS-ThM3, 156; EN+SS- 

FrM7, 184 

Stolwijk, S.D.: MI-WeM1, 135 

Stone, D.: SE+NS-MoA1, 97 

Stone, J.A.: VT-MoM6, 90 

Stoneking, M.R.: PS-ThP21, 179 

Storch, I.R.: MN-TuM10, 106; MN-TuM11, 

106 

Storm, A.J.: VT-TuA7, 121 

Stout, P.: PS2-MoA4, 97 

Strietzel, C.: VT-MoM2, 90 

Strohmeier, B.: AS+BI-TuM11, 102 

Strom, M.J.: MB+BI-ThA7, 169 

Stroscio, J.A.: GR+EM+ET+NS+TF-MoA10, 

94; MI-WeM11, 135; MI-WeM2, 135 

Strouse, G.F.: VT-MoM6, 90 

Stuart, S.C.: GR+EM+ET+MS+NS-FrM8, 

185 

Stubbers, R.: EN-ThP11, 175 

Stuppy, S.M.: MB+BI-ThA3, 169 

Stutzman, M.L.: VT-MoM5, 90; VT-TuP16, 

130 

Styan, K.: BI-MoM5, 83 

Styrov, V.: SS+EN+OX-ThM12, 161 

Su, C.: SP+AS+BI+ET+MI+TF-WeA8, 149 

Su, D.: EN+SS-FrM4, 184 

Su, H.: TF+EM+SE+NS-ThM4, 162; 


Su, L.: EM-ThP6, 175 

Suanpoot, P.: PS+BI-MoA3, 96; PS-ThP38, 

179 

Subramaniam, S.: AS+BI-TuA7, 113 

Subramanian, V.: AS+NS+SS+TF-WeA4, 

143 

Such, G.K.: BI-MoM1, 83 

Sudipta, S.: BI-TuP3, 125 

Suemitsu, M.: GR+EM+NS+PS+SS+TF- 

MoM10, 85 

Suetsugu, Y.: VT-TuA1, 121 

Sugai, H.: PS1-WeA3, 148 

Sugimoto, Y.: SP+AS+BI+ET+MI+NS- 

TuA11, 119 

Sugiyama, M.: EN+TF-TuA12, 114; MN- 

TuP4, 126 

Sukenik, C.N.: OX+EM+MI+NS+TF- 

MoM11, 87 

Sumant, A.V.: AS-TuP12, 124; MN+AS- 

MoM3, 85; MN+AS-MoM5, 85 

Sumiya, K.: TR-TuP3, 130 

Sumpter, B.G.: NS+AS+SS+SP-WeM11, 

136; SS-WeM4, 138 

Sun, D.Z.: GR-ThP8, 176; 


WeM5, 137; SS-WeA1, 150 

Sun, G.F.: SS-WeM12, 138 

Sun, H.D.: AS+BI-TuA2, 113; AS+BI-TuA4, 

113 

Sun, L.: SE+PS-TuM9, 108; TF+AS+SS- 

ThA10, 171 

Sun, T.: EM-TuA7, 114 

Sun, X.: TR-TuP1, 130 

Sun, Y.: TF-TuM9, 109 

Sun, Z.: EM-TuA8, 114; PS-ThP10, 178 

Sundaram, G.: PS1-TuA11, 117; 

TF+EM+SS-ThA7, 172; TF-WeM1, 139 

Sundararajan, R.: PS1-TuM11, 107; PS1- 

WeA12, 148; PS2-MoA10, 97; PS2- 

MoA11, 97; PS2-MoA9, 97 

Sung, C.Y.: GR+AS+NS+SP+SS-TuA11, 115 


Sung, H.K.: PS-ThP23, 179 

Sung, Y.M.: PS-ThA10, 170; PS-ThA7, 170; 

PS-ThP33, 179; PS-ThP35, 179 

Suntharampillai, T.: BI-TuP9, 125 

Suo, Z.: NS-ThM12, 159 

Surla, V.: PS-ThA11, 170 

Surman, D.: EW-TuL4, 111 

Surnev, S.: SS+OX-WeM12, 138 

Sutarto, R.: TF+AS-TuA10, 120 

Suthar, K.J.: NS+SP-MoA11, 95 

Suto, S.: SS-MoA10, 98 

Sutter, E.: GR+EM+NS+SS+TF-ThA2, 169 

Sutter, P.W.: GR+AS+EM+NS+SS-WeA8, 

145; GR+EM+NS+SS+TF-ThA2, 169; 


Suzer, S.: AS-MoM11, 82; EN-ThP3, 175 

Suzuki, H.: MN-TuP5, 126 

Suzuki, T.: GR+AS+EM+NS+SS-WeA12, 

145; PS1-TuM5, 107; PS2-WeA3, 148; 

PS-MoM2, 88; PS-WeM10, 137; SE- 

TuP2, 128 

Suzuki, Y.: SS-TuP11, 129 

Švec, M.: ET+SS+GR+SP-FrM5, 184 

Svedberg, E.B.: EN+NS-ThA7, 168 

Sverdlov, Y.: MN-MoA8, 94 

Swain, G.W.: MB+BI-ThA3, 169 

Swaraj, S.: AS+BI-TuM5, 102 

Swart, H.C.: SS+OX-WeM11, 138 

Sweeny, B.: EN+SS-FrM4, 184 

Sweet, W.J.: TF2-TuA7, 120 

Swinney, T.C.: VT-MoA11, 99 

Sydorenko, D.: PS2-MoA10, 97; PS2-MoA9, 

97 

Sykes, C.H.: EM+SS+AS+NS-ThM9, 155; 

SS-MoA7, 98; SS-ThM3, 161; SS-TuP1, 

129; SS-WeA2, 150; SS-WeM1, 138 

Synowicki, R.A.: 


MoM5, 83 

Szakal, C.: AS+BI-TuA9, 113 

Szili, E.J.: PS+BI-MoA7, 96 

Szulczewski, G.J.: MI+OX-WeA2, 147 

— T — 

Ta, C.N.: BI-TuP15, 125 

Tagami, M.: PS2-TuM9, 108 

Taing, J.: EN+SS-FrM5, 184; SS+NS-TuA3, 

119 

Tait, S.L.: SS+NS-ThA11, 170; SS-MoA3, 

98; SS-WeM3, 138 

Tajima, S.: PS-ThP25, 179 

Takaba, G.: PS-ThP8, 178 

Takagi, K.: GR+AS+NS+SS-ThM1, 157 

Takahashi, K.: MN-TuP9, 126 

Takahashi, M.: PS-ThP34, 179 

Takahashi, N.: VT-MoA3, 99 

Takahashi, R.: VT-TuA10, 121 

Takahashi, S.: PS2-ThM3, 160 

Takai, O.: GR-ThP7, 176; NS-ThP4, 178 

Takaishi, R.: AS-ThM12, 155; AS-TuP3, 124; 

AS-TuP6, 124 

Takano, I.: SS-TuP11, 129; SS-TuP32, 129; 


Takao, Y.: PS2-TuA10, 118; PS2-TuA12, 

118; PS-ThP20, 179 

Takarai, Y.: NM-TuP2, 127 

Takats, Z.: IS+AS+BI+ET+GR+NS-TuA3, 

116 

Takeda, K.: PS1-TuM5, 107; PS2-MoA7, 97; 

PS2-ThM5, 160; PS-ThP14, 178 

Takemura, S.: NM-TuP1, 127; NM-TuP2, 

127; NM-TuP3, 127; TF-ThP12, 180 

Takeuchi, T.: PS2-WeA3, 148 

Talin, A.A.: MI-WeM11, 135 

Tallarida, M.: IS+AS+OX+ET-WeM9, 135 

Talledo, A.F.: TC-ThP3, 180; TR-TuP4, 130 

Tamanaha, C.R.: GR+AS+BI+PS+SS-WeM5, 

134; GR+AS+NS+SS-ThM3, 157 

Tamaya, S.: PS-ThP6, 178 

Tamura, H.: PS-ThA1, 170

Tamura, Y.: PS2-ThM10, 160 

Tan, H.: AS+BI-TuA2, 113 

Tan, K.: IS-TuP2, 126 

Tan, X.: EL+TF+AS+EM+SS+PS+EN+NM- 

MoM4, 83 

Tanaka, S.: GR+AS+NS+SS-ThM1, 157 

Tang, J.-M.: SS-TuP4, 129 

Tang, X.: MI+OX-WeA7, 147 

Tanski, J.A.: VT-MoA6, 99 

Tantardini, G.F.: GR+AS+EM+NS+SS- 

WeA12, 145 

Tao, F.: TF+AS+SS-ThA6, 171 

Tao, J.: SS-TuP15, 129 

Tapasztó, L.: AS+TF+VT-FrM3, 183 

Taschuk, M.T.: TF+SE+NS-WeM11, 139; 


WeM9, 139 

Tasneem, G.: AS-MoM6, 82 

Tatsumi, T.: PS2-ThM4, 160; PS2-TuA9, 

118; PS-ThP14, 178; PS-ThP20, 179 

Tatulian, S.A.: GR+AS+BI+PS+SS-WeM6, 

134 

Taubert, I.: BI-TuP14, 125 

Taubner, T.: AS-WeM4, 132 

Taucer, M.: 


WeM2, 137 

Tawalbeh, T.: EM+NS-FrM9, 183 

Te Sligte, E.: PS-ThP15, 178 

Telib, H.: VT-TuM9, 110 

Temmen, M.G.: MN-TuM6, 106 

Temple, D.S.: EN+NS-MoM11, 84 

Temst, K.: MI+SP+AS-ThM9, 159 

ten Elshof, A.: EL+TF+BI+AS+EM+SS- 

MoA8, 92 

Tendler, S.J.B.: SP+AS+BI+ET+MI+NS- 

TuA9, 119 

Teng, D.: GR+AS+EM+NS+SS-WeA11, 145 

Tenne, R.: NS+AS+SS+SP-WeM4, 136 

Tennyson, E.: EM-ThP15, 175 

Tennyson, J.: PS2-MoA6, 97 

Tentschert, J.: AS-TuP1, 124 

Teplyakov, A.V.: AS-TuP20, 124; EN+AS- 

ThA8, 167; SS+EM-WeA12, 149; SS- 


ter Veen, H.R.J.: TF+AS+SS-ThA4, 171; TF- 

ThP14, 180 

Terauds, K.: TF+EN-MoA3, 98 

Terawaki, L.: SS-TuP31, 129 

Terfort, A.: SS+NS-ThA10, 170; TF+AS+SS- 

ThA2, 171 

Terrones, H.: SS-WeM4, 138 

Terrones, M.: GR+AS+EM+NS+SS-WeA3, 

145 

Terryn, H.: SE+PS-TuA9, 118 

Terui, S.: VT-TuA1, 121 

Teslich, N.E.: AC+EN-TuM6, 102 

Thakur, M.: EN+NS-ThM12, 156 

Theilacker, W.: AS+BI-TuM4, 102 

Therien, M.: NS-WeA1, 147 

Thevuthasan, S.: AS+BI-TuA12, 113; 

AS+NS+SS+TF-WeA3, 143; 

AS+NS+SS+TF-WeA4, 143; AS-TuP17, 

124; EN-ThP10, 175; HI-ThP2, 177; 

IS+AS+BI+ET+GR+NS-TuA12, 116; 

NS-ThP13, 178; NS-WeA10, 147; OX- 

TuP6, 127; SS-TuP26, 129; 



Thierley, M.: VT+AS+SS-WeM3, 140 

Thiess, S.: AS+TF+VT-FrM3, 183 

Thissen, A.: EW-TuL6, 111 

Thissen, H.: BI-MoM5, 83; BI-MoM6, 83 

Thissen, P.: EN+AS-ThA7, 167; SS+EM- 

WeA11, 149; SS-TuP21, 129; 


Thomas, E.: SE+NS-MoA11, 97 

Thomas, J.C.: SS+EM-WeA2, 149; SS- 


Thomas, M.: AS+NS+SS+TF-WeA10, 143 

Thomas, M.A.: PS1-TuA12, 117 

Thomas, S.: EN+TF-WeA8, 144 

Thomas, W.: BI+SS+AS-TuM6, 103 

THompson, W.: HI-ThP3, 177 

Thoms, B.: EM-ThP5, 175 

Thone, M.: TF2-TuA11, 120 

Thonhauser, T.: EN+AS-ThA7, 167; IS- 

TuP2, 126 

Thornton, M.: PS-ThA6, 170 

Thorpe, R.: EN+AS-ThA9, 167 

Thrun, X.: PS2-TuM12, 108 

Tian, F.Y.: SS-TuP20, 129 

Tian, J.D.: MN-TuP2, 126 

Tian, P.: PS2-TuA11, 118 

Tian, W.-C.: MN+AS-MoM11, 85; MN- 

MoA9, 94 

Tillocher, T.: MN+AS-MoM6, 85; PS+EM- 

MoM3, 87; PS1-ThM2, 160; PS1-ThM3, 

160 

Timm, R.: EM+MI-ThA6, 166; ET+NS+EM- 

ThM6, 157 

Titus, M.: PS-MoM1, 88 

Tivanski, A.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Tiwald, T.E.: EL+TF+BI+AS+EM+SS- 

MoA1, 92 

Tiwari, A.N.: TF+AS-WeA3, 151 

Tkach, I.: AC+TF+SS+MI-MoA6, 91 

Tkadletz, M.: SE+NS-MoM6, 88 

To, B.N.: PS1-ThM12, 160 

Tobin, J.G.: AC+MI+SS+TF-MoM9, 82 

Tochigi, H.: VT-MoM1, 90 

Todor, O.: PS2-TuM10, 108; PS-ThA11, 170 

Todorovic, M.: SP+AS+BI+ET+MI+NS- 

TuA10, 119 

Toeller, M.: TF-ThP1, 180 

Toivola, M.: EN+TF-WeA10, 144 

Tokei, Z.: EM-TuA3, 114 

Tokluoglu, E.: PS2-MoA10, 97; PS2-MoA9, 

97 

Tokranov, V.: EM+TF+OX+GR-MoM3, 84 

Tokumoto, H.: PS2-ThM3, 160 

Tolbert, L.: GR+EM+ET+MS+NS-FrM9, 

185; GR-ThP10, 176 

Tolmer, P.: NS-ThM11, 159 

Toman, B.: VT-MoA1, 99 

Tomaszewski, D.: PS2-WeA3, 148 

Tompkins, H.G.: 


MoM8, 83 

Toney, M.F.: EM-TuA2, 114; EM-TuA7, 114 

Tongay, S.: GR+EM+ET+MS+NS-FrM11, 

185; LB+EM+GR+MN+TR-WeA7, 146 

Torija, M.: OX+EM+MI+NS+TF-MoM10, 87 

Torun, B.: SS-ThA9, 171; TF+AS+SS-ThA1, 

171 

Tosa, M.: MN-TuP5, 126 

Tosun, B.S.: EN+TF-TuM9, 104 

Tóth, J.: AS+TF+VT-FrM3, 183 

Tougaard, S.: AS-MoM1, 82 

Toyoda, A.: SS-TuP6, 129 

Tracy, J.B.: TF2-TuA1, 120 

Travis, J.: TF+EN-MoA3, 98 

Trenary, M.: SS-WeM5, 138 

Trevino, K.: PS-ThP1, 178 

Trickett, Y.: PS-ThP34, 179 

Trioni, M.I.: AC+TF+SS+MI-MoA3, 91; 


Tripp, R.A.: TF+SE+NS-WeM12, 139 

Trogler, W.C.: BN+AS-WeA3, 143 

Tromp, R.M.: GR+EM+NS+PS+SS+TF- 

MoM8, 85 

Tronic, E.: BI+SS+AS-TuM6, 103 

Tsai, H.: PS1-ThM12, 160 

Tsai, J.H.: PS+EM-MoM4, 87 

Tsang, K.: BI-MoM5, 83 

Tsargorodska, A.B.: NS+SP-MoA1, 95 

Tsong, T.T.: HI+AS+NS-WeA8, 146 

Tsuchikawa, R.: NS+EN-TuM11, 107 

Tsuda, H.: PS2-TuA10, 118; PS2-TuA12, 118 

Tsushima, T.: SE+PS-TuA8, 118 

Tsverin, Y.: NS+AS+SS+SP-WeM4, 136 

Tucker, R.T.: TF+SE+NS-WeM11, 139; 


Tully, J.C.: SS-MoM8, 89 

Turchanin, A.: GR+AS+BI+PS+SS-WeM11, 

134; HI+AS+BI+NS-ThM11, 158; 

HI+AS+BI+NS-ThM5, 158 

Turk, M.E.: GR+AS+EM+MI+MN-TuM2, 

105 

Turkowski, V.: MI+EN+BI-TuA8, 116; NS- 

WeA9, 147 

Turner, M.: PS1-TuM10, 107; PS1-TuM9, 

107 

Tuscano, J.A.: TF+EM+SS-ThA8, 172 

Tweedy, J.: EM+TF+AS-ThA1, 167 

Twigg, M.E.: EM+TF+AS-ThA6, 167 

Tyagi, P.: GR+AS+NS+SP+SS-TuA11, 115; 


Tyler, K.: SS-ThM11, 161 

Tyliszczak, T.: GR+AS+EM+MI+MN-TuM9, 

105; IS+AS+BI+ET+GR+NS-TuA9, 116 

Tysoe, W.T.: TR+SE-WeM3, 140 

Tzeng, Y.R.: LB+EM+GR+MN+TR-WeA8, 

146 

— U — 

Uchida, G.: EN+NS-MoM2, 84 

Ueba, T.: SS-TuP31, 129 

Ueda, O.: EN-ThP12, 175 

Ueki, S.: MN-TuP4, 126 

Ueno, I.: SS-ThA10, 171 

Ueno, T.: GR-ThP7, 176 

Ünverdi, Ö.: SP+AS+BI+ET+MI+NS- 

TuA10, 119 

Uesawa, F.: PS-ThP14, 178 

Ugelow, M.: AS+BI-TuA9, 113 

Uhm, H.: PS+BI-MoA3, 96 

Ulfig, R.M.: AS-TuP18, 124 

Ulijn, R.: BI+SS+AS-TuM9, 103 

Ulrich, M.D.: GR+EM+ET+MS+NS-FrM8, 

185 

Unger, M.: AS-WeM6, 132 

Unger, W.E.S.: AS+BI-TuM5, 102 

Ungureneau, M.: GR+AS+EM+MI+MN- 

TuM9, 105 

Upadhyay, R.: PS2-MoA11, 97 

Upadhyaya, G.: PS-MoM1, 88; PS-MoM9, 88 

Urata, C.: SS-ThM1, 161 

Urban, F.K.: 


MoM10, 83 

Urban, R.: HI+AS+NS-WeA7, 146 

Usachov, D.: GR-ThP3, 176 

Usami, K.: NS+EN-TuM5, 107 

Ushigome, D.: GR+AS+EM+NS+SS- 

WeA12, 145 

Utech, T.: TR-TuP7, 130 

Utz, A.L.: SS-MoA4, 98 

Uvdal, P.: SS-MoA11, 98 

— V — 

Vahedi, V.: PS-MoM11, 88 

Vail, M.A.: TF2-TuA2, 120 

Valefi, M.: TR+BI-TuM5, 110 

Valla, T.: MI-WeM9, 135 

Vallee, C.: OX-TuP2, 127; TF+MI-WeA7, 

151 

Vallée, C.: NM+NS+MS+EM-MoA6, 95 

Vallier, L.: PS2-TuM2, 108 

Valtiner, M.: BI+SS+NS-WeM5, 132 

Van Assche, G.: SE+PS-TuA9, 118 

van Buuren, T.: AS+TF+VT-FrM2, 183; 


van de Loo, B.W.H.: 


MoM6, 83; TF-TuM5, 109 

209 Author Index

van de Sanden, M.C.M.: EN+PS-WeM3, 133; 

EN+PS-WeM4, 133; PS+TC-WeM2, 136; 

PS2-WeA1, 148; PS2-WeA9, 148 

van der Donck, J.C.J.: VT-TuA7, 121 

Van der Mei, H.C.: MB+BI-ThM11, 158 

van der Mullen, J.J.A.M.: PS1-WeA7, 148 

van der Veen, J.: NS+SP-MoA9, 95 

Van der Ven, A.: SS+EM-WeA2, 149; SS- 


van der Wiel, W.G.: NS+SP-MoA9, 95 

van der Zwaag, S.: TR+BI-TuM5, 110 

Van Duyne, R.P.: NS-ThP3, 178; NS-WeA3, 

147 

Van Elshocht, S.: IS+AS+OX+ET-WeM9, 

135; LB+EM+GR+MN+TR-WeA12, 146; 

TF-ThP1, 180 

van Hest, F.A.M.: TC+EM+AS-WeA10, 150 

Van Mele, B.: SE+PS-TuA9, 118 

Van Spyk, M.H.C.: SS-ThA1, 171; SS- 

WeM11, 138 

Van Veldhoven, E.: HI+AS+NS-WeA9, 146 

van Zijll, M.: NS-ThM6, 159 

Vandencasteele, N.: PS+TC-WeM12, 136; 

PS-ThP2, 178; PS-ThP31, 179; SE+NS- 

MoA4, 97 

Vanderleyden, E.: MN+AS-MoM10, 85 

VanDerslice, J.: EL+TF+BI+AS+EM+SS- 

MoA1, 92 

Vandervelde, T.E.: EN+NS-ThA2, 168 

Vandervorst, W.: AS-ThM6, 155 

VanFleet, R.: LB+EM+GR+MN+TR-WeA3, 

146; MN+AS-MoM4, 85 

Vanhart, D.: EN+TF-WeA12, 144 

Vanhove, N.: HI+AS+NS-WeA10, 146 

Vaniapura, V.: PS2-TuM10, 108 

VanSant, K.: TF+AS-WeA10, 151 

Varela, M.: OX+EM+MI+NS+TF-MoM10, 

87 

Varga, T.: HI-ThP2, 177; MI-ThP4, 177; NS- 

ThP13, 178; OX-TuP6, 127 

Varoutis, S.: VT-TuM4, 110 

Vasekar, P.S.: EN+TF-WeA12, 144 

Vasiliev, I.V.: EM+NS-FrM9, 183 

Vasudevan, S.: GR+AS+NS+SS-ThM4, 157 

Vega, A.: TF+AS+SS-ThA3, 171 

Velden, M.: TC+EM+AS+TF+EN-ThM2, 

162 

Vélez, C.: BI-TuP6, 125 

Vemuri, R.S.: HI-ThP2, 177; NS-ThP13, 178; 


Venkatachalam, D.K.: 


Ventrice, Jr., C.A.: GR+AS+NS+SP+SS- 

TuA11, 115; GR+EM+NS+PS+SS+TF- 

MoM2, 85 

Ventzek, P.: PS2-MoA10, 97; PS2-MoA11, 

97; PS2-MoA9, 97 

Verberk, R.: VT-TuA7, 121; VT-TuA9, 121 

Verbitsky, N.: GR-ThP3, 176 

Verdini, A.: SS+OX-WeM6, 138 

Verheijen, M.A.: TF+EN-MoA4, 98; TF- 

TuM10, 109; TF-TuM11, 109 

Verkhoturov, S.: AS-ThM5, 155 

Versloot, T.J.: PS-ThA9, 170; PS-ThP15, 178 

Versluis, R.: VT-TuA7, 121; VT-TuA9, 121 

Vescovo, E.: MI+OX-WeA10, 147; MI+OX- 

WeA11, 147 

Veyan, J.-F.: GR+AS+BI+PS+SS-WeM2, 

134; NS+SP-MoA7, 95; SS-WeA12, 150 

Viale, L.: VT-TuM12, 110 

Vicar, M.: VT-MoA1, 99 

Vickerman, J.C.: AS-ThM2, 155 

Victora, R.H.: TF+MI-WeA1, 151 

Vieker, H.: HI+AS+BI+NS-ThM5, 158; HI- 

ThP1, 177 

Vilayurganapathy, S.: NS-WeA10, 147; 


Vilmercati, P.: AC+TF+SS+MI-MoA3, 91 

Vincent, M.: EN+TF-WeA4, 144 

Vincent-Johnson, A.J.: TF+EN-MoA7, 98 

Virwani, K.: EM-TuA8, 114 

Vizioz, C.: PS-ThP26, 179 

Vlassiouk, I.: AS-TuP12, 124; 


Voelcker, N.H.: PS+BI-MoA7, 96 

Voevodin, A.A.: SE+NS-MoA1, 97; SE- 

TuP3, 128; TR+SE-WeM1, 140 

Vogel, E.M.: EM+TF-WeM4, 133; EM- 

TuM3, 103 

Vogli, E.: PS2-TuA1, 118 

Vogt, P.: GR+EM+NS+SS+TF-ThA6, 169 

Vohs, J.M.: SP+AS+BI+ET+MI+TF-WeA3, 

149 

von Bergmann, K.: NS-ThM1, 159 

Vora, P.M.: GR+AS+EM+MI+MN-TuM2, 

105 

Voronin, S.: PS2-TuM1, 108 

Voroshazi, E.: AS-ThM6, 155 

Vo-Van, C.: GR+AS+EM+NS+SS-WeA10, 

145 

Voznyuk, V.: MI+OX-WeA7, 147 

Vratzov, B.: NS+SP-MoA9, 95 

Vukovic, M.: VT-TuP4, 130 

Vurgaftman, I.: EM+TF+AS-ThA6, 167 

Vyalikh, D.: GR-ThP3, 176 

— W — 

Wada, A.: PS1-TuA9, 117; PS-MoM6, 88 

Wade, S.A.: MB+BI-ThA4, 169 

Wadikar, M.: SE+PS-TuA9, 118 

Waerenbogh, J.-C.: AC+TF+SS+MI-MoA6, 

91 

Wagner, M.: SS+OX-WeM12, 138 

Wagner, M.S.: AS-WeM3, 132 

Walker, A.V.: EM+TF-WeM5, 133 

Walker, G.: SS+OX-WeM4, 138; SS-TuP5, 


Walker, R.: AS-TuP9, 124 

Wall, M.H.: GR-ThP1, 176 

Wallace, D.C.: EM+NS-FrM11, 183 

Wallace, R.M.: EM+TF+OX+GR-MoM1, 84; 

EM+TF+OX+GR-MoM5, 84; EM-TuM3, 

103; GR+AS+EM+NS+SS-WeA1, 145; 


Wallig, J.: SE+PS-TuM10, 108 

Wallin, C.B.: MN-TuM10, 106 

Wallin, P.: BI-MoA3, 92 

Walrath, J.C.: EM+SS+AS+NS-ThM13, 155 

Walsh, L.A.: AS-TuP7, 124; EM-TuM5, 103 

Walter, A.: GR+EM+ET+NS+TF-MoA8, 94 

Walters, D.: SP+AS+BI+ET+MI+TF- 

WeA11, 149 

Walton, J.: AS+BI-TuM12, 102 

Walton, S.G.: GR+AS+BI+PS+SS-WeM9, 

134; GR+EM+NS+PS+SS+TF-MoM1, 

85; GR-ThP9, 176; PS1-TuM12, 107; PS- 

ThP40, 179 

Wan, K.: BN+AS-WeA10, 143 

Wang, B.: IS+AS+BI+ET+GR+NS-TuA9, 

116 

Wang, C.: SS-WeM2, 138 

Wang, C.A.: PS-ThP1, 178 

Wang, C.M.: HI-ThP2, 177; NS-ThP13, 178 

Wang, D.D.: AS+BI-TuA4, 113 

Wang, E.G.: EM-ThM11, 156 

Wang, G.-C.: TF+SE+NS-WeM4, 139 

Wang, H.: EN+NS-ThM10, 156; PS2-TuM6, 


Wang, J.: EN+TF-WeA8, 144; 

HI+AS+BI+NS-ThM9, 158; MI+OX- 

WeA10, 147; MN-MoA4, 94; NS-MoM9, 

86; SS-TuP4, 129; TF-MoM8, 89 

Wang, J.-P.: MI+OX-WeA3, 147 

Wang, K.L.: EM+SS+AS+NS-ThM11, 155 

Wang, L.: AC+TF+SS+MI-MoA1, 91; 

GR+EM+ET+NS+TF-MoA10, 94; PS- 

ThP1, 178; PS-WeM4, 137; TF+AS+SS- 

ThA8, 171; VT-MoA6, 99 

Wang, L.B.: MN+AS-MoM11, 85 


Wang, M.-C.: PS-ThP45, 179 

Wang, P.: NS-WeA2, 147 

Wang, Q.H.: GR+AS+BI+PS+SS-WeM1, 

134 

Wang, R.: EN+TF-TuA8, 114 

Wang, S.: MN-TuM11, 106 

Wang, W.: ET+SS+GR+SP-ThA10, 168; SS- 


Wang, X.: BI-TuP6, 125; 


Wang, Y.: EN+NS-MoM2, 84; EN+TF- 

TuA12, 114; GR-ThP3, 176; 

OX+SS+TF+MI-MoA10, 96; PS-ThP10, 

178 

Wang, Z.: AS-MoA3, 91; IS+AS+OX+ET- 

WeM5, 135 

Wang, Z.-T.: SS+EN+OX-ThM5, 161; 

SS+EN+OX-ThM9, 161; SS-TuM5, 109 

Wanifuchi, T.: PS-ThP8, 178 

Warren, A.P.: EM-TuA2, 114; EM-TuA7, 

114 

Wasio, N.A.: AS-TuP26, 124; 


Watanabe, N.: PS2-ThM9, 160 

Watanabe, Y.: NM-TuP1, 127; NM-TuP2, 

127 

Waters, J.: NS+EN-TuM3, 107 

Waterton, C.: IS+AS+BI+ET+GR+NS-TuA1, 

116 

Watkins, J.: NM+NS+MS+EM-MoA10, 95 

Watts, J.F.: AS-TuP4, 124 

Watts, S.: MI+OX-WeA7, 147 

Weaver, J.F.: SS+EN+OX-ThM10, 161; SS- 

TuP22, 129; SS-TuP23, 129 

Webb, L.: BI-TuP18, 125 

Weber, J.W.: 


MoM6, 83 

Weber, M.J.: TF+EN-MoA4, 98 

Weber, N.-E.: HI+AS+BI+NS-ThM5, 158 

Weber, P.K.: AC+EN-TuM6, 102 

Weeks, S.L.: EN+PS-WeM4, 133; NS- 

MoM6, 86 

Wege, S.: PS2-TuM12, 108 

Wehbe, N.: AS-MoA2, 91 

Wei, D.: EM+TF+OX+GR-MoM9, 84 

Wei, M.: TF+AS-WeA7, 151; TF+AS-WeA9, 

151 

Wei, S.-H.: EN+AS-ThA1, 167; 

TC+EM+AS-WeA4, 150 

Wei, W.D.: EN+SS-FrM4, 184 

Weidner, T.: AS-WeM3, 132 

Weiland, C.: AS-ThA6, 166 

Weinberg, R.Y.: VT-MoA6, 99 

Weinert, M.: GR+AS+NS+SP+SS-TuA2, 


Weisheit, M.: EM-TuA11, 114 

Weitering, H.: ET+NS+EM-ThM3, 157 

Weller, T.: NS-MoM9, 86 

Welzel, S.: EN+PS-WeM3, 133; PS+TC- 

WeM2, 136 

Wen, H.: SE-TuP4, 128 

Wenger, W.N.: EN+NS-MoM5, 84 

Werij, H.G.C.: VT-TuA7, 121 

Werner, S.: BP+AS-SuA3, 78 

Werner, W.S.M.: AS-MoM3, 82; AS-MoM6, 

82 

Wessel, S.: EN+AS-ThA6, 167 

Westwood, J.N.: MN-MoA7, 94 

Wetzel, C.: EM+TF+AS-ThA7, 167 

Wheeler, V.D.: EM+OX-WeA8, 144; 







GR-ThP9, 176 

White, C.T.: GR+AS+NS+SS-ThM4, 157

White, E.: EM+TF-WeM6, 133 

White, M.G.: NS+AS+SS+SP-WeM12, 136; 


White, R.G.: AS-MoA2, 91; AS-MoM10, 82; 

AS-TuP11, 124; EW-TuL3, 111 

Whitehead, N.P.: BN+AS-WeA9, 143 

Whitten, D.G.: MB+BI-ThM9, 158 

Whittle, J.D.: PS-ThA8, 170 

Wichmann, A.: NS+AS+SS+SP-WeM3, 136 

Wielunski, L.S.: AS-MoA10, 91 

Wiemer, M.: EN+TF-TuA9, 114 

Wiens, J.P.: SS-MoA1, 98 

Wiesendanger, R.: NS-ThM1, 159 

Wiesmann, H.P.: BI-TuP12, 125 

Wijnaendts van Resandt, N.: EW-WeA5, 145 

Wilbert, D.S.: ET+NS+EM-ThM11, 157 

Wilcock, J.: TF-WeM6, 139 

Wilde, M.: SS-MoA9, 98 

Wildman, H.: EM+NS-FrM10, 183 

Wilhelm, F.: SS+OX-WeM5, 138 

Willey, T.M.: AS+TF+VT-FrM2, 183 

William, C.T.: SS-ThM11, 161 

Williams, A.: PS+TC-WeM11, 136 

Williams, A.I.: PS2-MoA6, 97 

Williams, P.: MB+BI-ThM12, 158 

Williams, P.M.: BI+SS+AS-TuM1, 103 

Williams, T.S.: PS+EM-MoM9, 87 

Willman, J.T.: TF-ThP4, 180 

Willunat, A.: HI+AS+BI+NS-ThM11, 158; 


Wilson-Rae, I.: MN-MoA1, 94 

Wilt, D.: EN+NS-MoM10, 84 

Winans, L.: TF+EN-MoA1, 98 

Windisch, Jr., C.F.: AS+BI-TuA12, 113 

Winkler, K.: GR+AS+NS+SP+SS-TuA1, 115 

Winter, A.: HI+AS+BI+NS-ThM11, 158; 


Winter, B.: SS-ThA1, 171; SS-ThA2, 171 

Winter, G.: AS+BI-TuM3, 102 

Wirtz, T.: HI+AS+NS-WeA10, 146 

Wise, R.: PS-MoM9, 88 

Wissing, S.N.P.: MI-WeM1, 135 

Witanachchi, S.: EN+NS-MoM6, 84; 

MI+OX-WeA9, 147; 


Wittstock, A.: IS+AS+OX+ET-WeM6, 135; 


Witzke, M.: PS+EM-MoM11, 87 

Wodtke, A.M.: SS-MoM4, 89 

Woicik, J.C.: AS-ThA6, 166; AS-ThA8, 166; 

AS-TuP7, 124; EM-TuM5, 103; 


Wolden, C.A.: EN+TF-MoA10, 93; PS1- 

TuA7, 117 

Wolf, H.: NS+SP-MoA2, 95 

Wolf, J.: VT-TuM10, 110; VT-TuM11, 110 

Wolf, S.A.: EM+MI-ThA11, 166; 

MI+EN+BI-TuA7, 116 

Wolkow, R.A.: HI+AS+NS-WeA7, 146; 


WeM2, 137 

Woll, A.R.: IS+AS+BI+ET+GR+NS-TuA2, 

116 

Wöll, Ch.: GR-ThP3, 176; OX+SS+TF+MI- 

MoA10, 96 

Wolstenholme, J.: AS+BI-TuM11, 102 

Wolter, B.: NS-ThM1, 159 

Womack, V.M.: BN+AS-WeA12, 143 

Won, J.: PS-WeM9, 137 

Won, S.-O.: EN+TF-TuM12, 104 

Wong, B.: MN-TuP7, 126 

Wong, M.S.: EN+NS-ThM12, 156 

Woo, J.C.: EM+TF+OX+GR-MoM8, 84; PS- 

ThP30, 179; TF+AS-WeA12, 151 

Wood, B.C.: IS+AS+OX+ET-WeM6, 135 

Woodroof, M.: TF+EN-MoA8, 98 

Woods, A.S.: BN+AS-WeA12, 143 

Woods, L.M.: GR-ThP4, 176 

Wormeester, H.: EL+TF+BI+AS+EM+SS- 

MoA8, 92 

Wornyo, E.: PS-WeM11, 137 

Worsley, M.A.: IS+AS+OX+ET-WeM6, 135 

Wright, A.E.: AC+EN-TuM1, 102; AS- 

MoM10, 82; AS-TuP10, 124; EW-TuL3, 

111 

Wu, C.: PS+EM-MoM5, 87 

Wu, F.: PS-WeM1, 137; PS-WeM11, 137 

Wu, H.: EN+AS-ThA7, 167; HI-ThP3, 177 

Wu, I.-T.: MN-MoA4, 94 

Wu, J.: AC+TF+SS+MI-MoA1, 91 

Wu, K.H.: EM-ThM11, 156 

Wu, M.-F.: PS2-MoA3, 97 

Wu, M.-Y.: EN+TF-TuA3, 114 

Wu, N.: MI+OX-WeA10, 147 

Wu, R.: ET+NS+EM-ThM3, 157 

Wu, S.: GR+AS+NS+SP+SS-TuA12, 115 

Wu, Y.: EN+NS-ThA3, 168; PS-MoM11, 88; 

TF+EM+SE+NS-ThM3, 162; TF-TuM5, 

109 

Wu, Y.L.: PS-ThP36, 179; 


Wu, Z.: BN+AS-WeA3, 143 

Wuchter, P.: BI-TuP14, 125 

Wüest, M.: MN-TuP1, 126; VT-MoM2, 90 

Wygladacz, K.A.: AS-TuP19, 124 

Wyrick, J.: 


WeM5, 137 

— X — 

Xia, D.: HI-ThP3, 177 

Xia, Y.: SS-TuM10, 109 

Xiao, Q.: AS+TF+VT-FrM1, 183 

Xiao, Z.: EM-ThP13, 175; NS-ThP12, 178 

Xie, J.: EM+TF+AS-ThA1, 167 

Xie, K.: SS-WeA3, 150 

Xie, X.: TF-WeM2, 139 

Xing, G.: EM+OX-WeA3, 144 

Xu, H.Y.: PS2-WeA1, 148 

Xu, M.: NS-ThM2, 159 

Xu, Y.: EL+TF+BI+AS+EM+SS-MoA9, 92; 

GR+AS+EM+NS+SS-WeA11, 145; PS2- 

TuM9, 108 

Xue, A.: PS+EM-MoM8, 87 

Xue, J.: EM+TF-WeM9, 133 

— Y — 

Yacout, A.M.: AC+EN-TuM1, 102 

Yagisawa, T.: PS+EM-MoM10, 87 

Yague, J.L.: EM+TF-WeM11, 133 

Yakimov, M.: EM+TF+OX+GR-MoM3, 84 

Yakobson: GR+EM+NS+SS+TF-ThA8, 169 

Yakou, F.: SS+OX-WeM5, 138 

Yakovkin, I.N.: SS-TuP33, 129 

Yamada, A.: TF-ThP12, 180 

Yamada, T.: BI+SS+NS-WeM11, 132; 

PS+TC-WeM3, 136; SE+PS-TuA8, 118; 

SS-MoA10, 98; SS-TuP31, 129 

Yamada-Takamura, Y.: TF+AS-WeA8, 151 

Yamashita, I.: PS2-ThM10, 160 

Yamashita, Y.: AS-ThA10, 166 

Yamazaki, K.: GR-ThP5, 176 

Yamazawa, Y.: PS1-WeA12, 148 

Yan, H.: SS-WeA3, 150 

Yan, L.: TC-ThP2, 180 

Yan, YH.: VT-MoA1, 99 

Yanagisawa, Y.: PS2-ThM11, 160 

Yang, A.: AS-ThA10, 166 

Yang, B.: EN+NS-ThM10, 156 

Yang, C.S.: VT-TuA12, 121 

Yang, G.-E.: MI-ThP1, 177 

Yang, J.: EM+TF-WeM5, 133; MB+BI- 

ThM12, 158; PS+EM-MoM9, 87 

Yang, K.: TF+AS+SS-ThA8, 171 

Yang, K.-K.: EN+NS-ThM10, 156 

Yang, L.: IS+AS+BI+ET+GR+NS-TuA12, 

116 

Yang, M.: EN+TF-TuA8, 114; PS2-TuM6, 

108 

Yang, P.: SS-TuP26, 129 

Yang, Q.: PS2-TuM6, 108 

Yang, X.: SS-WeA10, 150 

Yang, Y.: NS+AS+SS+SP-WeM5, 136 

Yang, Y.C.: VT+AS+SS-WeM1, 140 

Yang, Y.J.: PS+EM-MoM4, 87; PS-ThP22, 

179 

Yanguas-Gil, A.: TC+EM+AS+TF+EN- 

ThM6, 162 

Yao, B.: EM-TuA7, 114; EN+TF-TuM10, 

104 

Yao, K.: OX-TuP3, 127 

Yaowarat, W.: NS-ThP11, 178 

Yashina, L.: GR-ThP3, 176 

Yasumura, S.: SS-TuP8, 129 

Yasutake, K.: PS+TC-WeM3, 136; SE+PS- 

TuA8, 118 

Yates, Jr., J.T.: SS+EN+OX-ThM6, 161; SS- 

TuM3, 109 

Yatsuda, K.: PS-ThP12, 178 

Yazawa, K.: SE+NS-MoA8, 97 

Yazyev, O.V.: GR+AS+NS+SS-ThM5, 157 

Yckache, K.: EM+TF+OX+GR-MoA9, 93 

Ye, D.: TF+EM+SE+NS-ThM6, 162 

Ye, J.: SS-TuM10, 109 

Ye, L.: TF-ThP9, 180 

Ye, Y.F.: SS-TuP37, 129 

Yeh, P.: PS+EM-MoM9, 87 

Yeh, P.-C.: SS-TuP2, 129 

Yeh, Y.C.: IS-TuP1, 126 

Yellen, B.: BI+SS+NS-WeM9, 132 

Yeom, G.Y.: ET-ThP1, 176; PS+TC-WeM9, 

136; PS2-ThM6, 160; PS-ThP24, 179; PS- 

ThP27, 179; PS-ThP28, 179; PS-ThP43, 

179 

Yesilkoya, F.: EM+OX-WeA9, 144 

Yilmaz, D.E.: OX+SS+TF+MI-MoA1, 96; 

OX-TuP3, 127; TR-TuP1, 130 

Yilmaz, E.: EN-ThP3, 175 

Yilmaz, M.: MN-MoA3, 94 

Yim, J.: PS+TC-WeM11, 136 

Yin, J.: EM+TF-WeM11, 133 

Yin, Y.: PS2-TuM6, 108; PS2-TuM9, 108; 

PS-ThP1, 178; PS-WeM1, 137; PS- 

WeM11, 137 

Yitamben, E.: SP-TuP2, 128 

Yoda, S.: SS-ThA10, 171 

Yokosuka, S.: PS2-ThM3, 160 

Yokus, M.: TF2-TuA10, 120 

Yoo, H.: EM-TuA12, 114 

Yoon, H.M.: PS-ThP23, 179 

Yoon, J.-H.: EN+TF-TuM12, 104 

Yoon, K.H.: EM-ThP12, 175 

Yoon, Y.: SS+EN+OX-ThM5, 161 

Yoshida, H.: VT-MoA3, 99; VT-MoA4, 99 

Yoshida, S.: TF-ThP2, 180 

Yoshida, Y.: NS-ThM1, 159 

Yoshikawa, A.: EM+TF+AS-ThA12, 167 

Yoshikawa, J.: PS2-MoA11, 97 

Yoshimura, M.: TR-TuP3, 130 

Yoshimura, T.: GR+AS+NS+SS-ThM1, 157; 

TF+EM+SS-ThA3, 172 

Yoshinaga, J.: VT-MoM1, 90 

You, M.Y.: NS-ThP6, 178 

You, S.-J.: PS-ThP4, 178; PS-ThP42, 179 

Young, A.: GR+EM+ET+NS+TF-MoA10, 94 

Young, L.: BI-MoA8, 92 

Yu, C.C.: IS-TuP1, 126 

Yu, G.-P.: TF-ThP3, 180 

Yu, H.: PS+EM-MoM9, 87; SE+PS-TuM3, 

108; SE+PS-TuM4, 108 

Yu, J.: GR+AS+NS+SP+SS-TuA12, 115 

Yu, S.W.: AC+MI+SS+TF-MoM9, 82 

Yu, W.: SS-WeA9, 150 

Yu, X.-Y.: IS+AS+BI+ET+GR+NS-TuA12, 

116 

211 Author Index

Yu, Z.: NS+AS+SS+SP-WeM4, 136; SS- 


Yuan, H.: TF-ThP10, 180 

Yuen, H.B.: EN+TF-TuA9, 114 

Yun, D.J.: AS-ThA4, 166 

Yun, J.-Y.: VT-TuP1, 130 

Yun, M.G.: TC-ThP1, 180 

Yurtsever, A.: SP+AS+BI+ET+MI+NS- 

TuA11, 119 

Yushin, G.: EN+NS-ThM4, 156 

— Z — 

Zandvliet, H.J.W.: EL+TF+BI+AS+EM+SS- 

MoA8, 92 

Zang, F.: BI+SS+NS-WeM2, 132 

Zapata-Torres, M.A.: TF-ThP8, 180 

Zapotok, D.W.: EM+OX-WeA8, 144 

Zappe, M.: LB+EM+GR+MN+TR-WeA3, 

146 

Zarrouati, M.: GR+AS+BI+PS+SS-WeM1, 

134 

Zauscher, S.: BI+SS+NS-WeM9, 132 

Zegenhagen, J.: AS-ThA7, 166; 


Zehnder, D.: GR+EM+ET+MS+NS-FrM3, 

185 

Zeman, M.: EN+PS-WeM10, 133 

Zendejas, J.: MN-TuP7, 126 

Zeng, H.: TR-TuA4, 121 

Zettl, A.: GR+AS+NS+SS-ThM5, 157 

Zettsu, N.: NS-ThP4, 178 

Zhakhovsky, V.: GR+AS+EM+MI+MN- 

TuM10, 105 

Zhan, Y.: GR+EM+NS+SS+TF-ThA3, 169 

Zhang, B.: SS-TuM10, 109; TC+EM+AS- 

WeA3, 150 

Zhang, C.X.: EM+SS+AS+NS-ThM11, 155 

Zhang, E.X.: EM+SS+AS+NS-ThM11, 155 

Zhang, F.: AS+BI-TuA2, 113; SS+EN+OX- 

ThM10, 161 

Zhang, H.: HI+AS+BI+NS-ThM9, 158 

Zhang, H.-Z.: PS-ThA10, 170 

Zhang, J.Z.: TF+SE+NS-WeM3, 139 

Zhang, K.H.L.: OX-TuP5, 127 

Zhang, L.: GR+EM+ET+NS+TF-MoA11, 94; 

IS+AS+SS+EN-TuM3, 105; PS1-ThM2, 

160; TF+AS-WeA1, 151 

Zhang, Q.: PS-ThP1, 178 

Zhang, S.: BI+AS-TuA3, 113; SS-TuP9, 129 

Zhang, T.: MI-WeM11, 135; MI-WeM2, 135 

Zhang, X.: EN+TF-MoA8, 93; EN+TF- 

MoA9, 93; HI+AS+BI+NS-ThM5, 158; 

HI-ThP1, 177 

Zhang, X.-G.: ET+SS+GR+SP-FrM1, 184; 


Zhang, Y.: ET+NS+EM-ThM3, 157; PS1- 

TuM10, 107; PS1-TuM9, 107 

Zhang, Z.: NS+EN-TuM11, 107; SS-TuM10, 

109 

Zhao, H.: IS+AS+SS+EN-TuM9, 105 

Zhao, J.: PS1-TuM11, 107; PS1-WeA12, 148; 

PS2-MoA11, 97; PS-ThP16, 178 

Zhao, S.-G.: SS-TuP9, 129 

Zhao, X.: TR-TuA7, 121 

Zhao, X.H.: MB+BI-ThA6, 169 

Zhao, Y.: GR+EM+ET+NS+TF-MoA10, 94 

Zhao, Y.-P.: EN+NS-ThM10, 156; 


WeM3, 139 

Zharnikov, M.: EM+TF-WeM1, 133 

Zheng, H.: EM-ThP10, 175 

Zheng, X.: TC+EM+AS+TF+EN-ThM11, 

162 

Zhernokletov, D.M.: EM-TuM3, 103 


Zhitenev, N.B.: GR+EM+ET+NS+TF- 

MoA10, 94 

Zhou, B.: PS-MoM1, 88 

Zhou, C.: AS+BI-TuA10, 113 

Zhou, H.: EM-TuA1, 114; PS2-TuM11, 108 

Zhou, J.: NS+AS+SS+SP-WeM5, 136; 

SS+NS-TuA12, 119; SS-TuP13, 129 

Zhou, R.: EM+TF-WeM9, 133 

Zhou, Y.H.: SS+NS-TuA12, 119; SS-TuP13, 


Zhu, H.: TF+EN-MoA6, 98 

Zhu, J.-H.: GR+EM+ET+NS+TF-MoA11, 

94; IS+AS+SS+EN-TuM3, 105; SS+NS- 

TuA11, 119; SS-TuM9, 109; SS-TuP35, 

129; SS-TuP37, 129 

Zhu, W.: PS-MoM8, 88 

Zhu, Y.: 


WeM5, 137 

Zhu, Y.-Z.: SS-TuP9, 129 

Zhu, Z.: AS-MoA3, 91; EM+NS-FrM10, 183; 


Zirbs, R.: NS+EN+GR-TuA1, 117 

Zoffmann Andersen, O.: BI-MoM2, 83 

Zohar, S.: MI+SP+AS-ThM12, 159 

Zollner, S.: EL+TF+AS+EM+SS-TuP2, 125; 

EL+TF+BI+AS+EM+SS-MoA9, 92; 

EM+NS-FrM9, 183 

Zonooz, P.: EN-ThP11, 175 

Zorn, G.: TF-ThP5, 180 

Zufelt, K.: LB+EM+GR+MN+TR-WeA3, 

146 

Zuilhof, H.: BI+SS+AS-TuM5, 103; EM+TF- 

WeM3, 133; TF+EM+SS-ThA4, 172 

Zuluaga, S.: EN+SS-FrM7, 184 

Zumbülte, A.: MI-WeM1, 135 

Zunft, H.: NM+NS+MS+EM-MoA9, 95

AVS-59 

EXHIBIT PROGRAM 

Exhibit Hall Special Events • Exhibitor Profiles • Exhibitor Product Locator • Exhibit Schedule 

Sponsors • Corporate Members • Advertisements and Promotions • Free Attractions 

213

AVS-59 

Exhibit Show Guide 

EXHIBIT HALL SCHEDULE 

Oct. 30 Tuesday 10am - 5:30pm 

Oct. 31 Wednesday 10am - 4:30pm 

Nov. 1 Thursday 10am - 2:00pm 

214 

TABLE OF CONTENTS 

Special Events & Attractions............215 

Sponsors & Corporate Members...... 218 

Exhbitor Quick Reference List..........219 

Exhibit Hall Floor Plan ..................... 220 

Product Locator ..............................221 

Exhibitor Profiles ............................ 231 

New AVS Exhibitors ........................ 262 

AVS-60 2013 ................................... 266 

EXHIBIT HALL ATTRACTIONS 

•Instrumentation 

•Equipment 

•Services 

•Consulting 

•Journals / Books 

•Professional Literature 

•Career Center / Employment Services 

•AVS Membership & Education Booth 

•Free Morning Coffee 

•Free Lunch 

•Technology Spotlight Sessions 

•Free Afternoon Refreshments 

•Art Zone Display & Competition 

•Raffle Drawings 

•AVS Store: Gifts/Souvenirs/Supplies 

•Ask The Experts - Vacuum Technology 

•Internet Access / E-Mail Pavilion 

•Caricatures 

•Massages - Neck/Shoulder/Back

Special Events & 

Attractions 

WELCOME MIXER - RIVER WALK 

Monday, October 29 5:30 - 7:30 

FUN and NETWORKING at its best! 

The Welcome Mixer offers food, refreshments, 

music and the opportunity to casually interface with 

fellow AVS attendees and exhibitors from around 

the world. Everyone is welcome at the Mixer! AVS 

thanks Physical Electronics and Thermo Scientific 

for their generous support. 

ASK THE EXPERTS BOOTH BOOTH 528 

An unbiased, open forum 

staffed by experts in various 

aspects of vacuum technology 

to discuss and help solve vacuum 

related issues. Stop by for some free therapy! 

Challenge our experts and receive a free souvenir 

while supplies last!! 

Sponsored by Duniway Stockroom, 

SAES Getters and Brooks Automation. 

CAREER CENTER BOOTH 733 

Make the right connections 

at AVS. Visit 

the career center to 

post job openings or 

search available positions. 

The AVS Career 

Center provides the 

opportunity for attendees 

and exhibitors to 

find a perfect fit within 

a specific field of expertise. 

Private interview rooms are available. 

215 

2nd Annual 

Foosball Tournament 

Join the fun at Booth 722 in the Exhibit Hall 

Sign up begins at 10am Tuesday, October 30th 

1st Place Takes 

Home the Grand 

Prize !! 

Hosted and 

Sponsored by: 

AVS STORE, MEMBERSHIP BOOTH 733 

& EDUCATION CENTER 

AVS EDUCATIONAL MATERIALS: 

•Videos 

•Books 

•Monographs 

•Membership Services 

AVS Store: 

•AVS Logo Items 

Flash Drives 

Clothing 

Souvenirs


Attractions 

CARICATURISTS BOOTH 333 

Visit the Special Events booth for your FREE AVS- 

58 Souvenir. Our caricature artists will be available 

during all Exhibit Hall hours. You will find your ticket 

in your registration kit. Ticket must be validated at 

Booth 600. Generously sponsored by Kratos 

Analytical. 

MASSAGE THERAPISTS BOOTH 333 

Free Chair Massages! Unwind 

and enjoy some relaxation. You 

will find your ticket in your registration 

kit. Tickets must be 

validated at Booth 300 

Generously Sponsored by 


E-MAIL PAVILION BOOTH 317 

A convenient place for 

attendees to keep in 

touch with the outside 

world. Check your email, 

flights, print boarding 

passes, etc. 

Generously sponsored by 

Specs Surface Nano Analysis 

LEEDS HISTORY DISPLAY BOOTH 539 

Come see actual examples 

of historical 

vacuum equipment. 

The AVS History 

Committee is starting 

a series of displays 

highlighting 

vacuum companies 

from the inception of the American Vacuum Society. 

216 

EXHIBITOR TECHNOLOGY BOOTH 701 

SPOTLIGHT SESSIONS 

Keep up to date with the latest technology! Exhibitors 

showcase new products, services and applications 

during brief 20 minute presentations. Sessions are 

scheduled during the technical session breaks. Be 

one of the first to arrive and receive an AVS-59 

souvenir! 

Participating Companies: 





Carl Zeiss Microscopy, LLC 


ESI Group 

Heidelberg Instruments, Inc. 

Huettinger Electronic 

KP Technology 

Kurt J. Lesker Company 

Specs Surface Nano Analysis GmbH 

Mantis Deposition 

Mewasa North America, Inc. 


Plasma-Therm 



A special multi-vendor session will take 

place on Thursday at 12pm to discuss 

XRAYS Imaging Techniques. Panel Discussion 

includes Kratos, Omicron, 

Thermo Scienfic & Physcial Electronics.


Attractions 

ART ZONE / CONTEST BOOTH 222 

See graphic designs in 

the form of art from fellow 

AVS attendees who 

will compete in our fourth 

annual art contest. Take 

a look at this amazing 

display and don’t forget 

to vote! Prizes will be announced 

at the Exhibit 

Finale on Thursday. 

First Place: $500 

Second: $250 

Third: $100 

Generously Sponsored by AJA International 

217 

RAFFLE ZONE BOOTH 733 

Find your entry tickets in your registration packet. 

There are daily raffle tickets - PLUS.. TWO GRAND 

PRIZE RAFFLES for Wednesday and Thursday!!! 

Drop your tickets in the appropriate raffle drums located 

in Booth 733 in the Exhibit Hall. 

Raffle Prize Preview... 

iPad 

Tuesday 

only!!!! 

•AIP 

•Agilent - VPD 

•BellowsTech 

•Bruker Corporation 

•Ebara Technologies 

•Edwards Vacuum 

•ION-TOF USA 

•Kratos Analytical 

•Kurt J. Lesker 

•Mantis Deposition 

•Omicron 

Netbook 

Computers 

KINDLE 

KRAZE 

EVERY 

DAY !! 

RAFFLE SPONSORS 

•PHPK 

•RBD Instruments 

•Scientific Instrument Services 

•Semicore 

•Shimadzu Scientific 

•Super Conductor Materials 

•Thermo Scientific 

•UC Components 

•Vacuum Research Corp. 

•VG Scienta 

GRAND PRIZE THURSDAY 

Generously Sponsored by...

Sponsors & Corporate Members 

AVS wishes to acknowledge and thank the following companies 

for their generous support of the Symposium & Exhibition 

AVS-59 SPONSORS 



SPECS Surface Nano Analysis, Inc. 




Kurt J Lesker Company 

Agilent Technologies 

Duniway Stockroom Corp 


Agilent Vacuum Products 



SAES Getters USA 

Extrel CMS 


ION-TOF USA 

Zeon Chemicals L.P. 


RF VII Inc. 

Shimadzu Scientific Instruments 

Mantis Deposition Ltd 


PHPK Technologies 

Ebara Technologies 



Super Conductor Materials 



Scientific Instrument Services, Inc. 



UC Components 

VG Scienta 

Medtronic 

LLNL 

LAM Research 

RHK Technology 

Omicron Nanotechnology 

GE Global Research 

Intel 

Applied Materials 

Global Foundries 

ONR Grant (via U of IL) 

John Woollam Company 

ONR 

2012 CORPORATE MEMBERS 

Advanced Energy Industries Inc. 

Agilent Technologies 


Alicat Scientific, Inc 

Altair Technologies, Inc. 



Bruker Nano Surfaces 

Cambridge NanoTech 

Capitol Vacuum Parts 

CeramTec North America 

Chuanbei Vacuum Technology 

(Beijing) Co., Ltd. 

Denton Vacuum LLC 

Duniway Stockroom Corp 

Edwards Vacuum, Inc. 

Evans Analytical Group 

FMG Enterprises, Inc. 


GNB Corporation 

Helium Leak Testing, Inc. 

Hiden Analytical, Inc 

Hine Automation 

HUETTINGER Electronic, Inc. 

HVS Leak Detection 

Innovative Vacuum Solutions, Inc. 

Intellivation, LLC 

ION-TOF USA Inc. 


Kurt J. Lesker Company 

Lam Research Corporation 

M&I Materials Ltd (Apiezon) 

MeiVac, Inc. 


MKS Instruments Inc 

Nor-Cal Products 

218 

Nordiko Technical Services Limited 

Omicron Nanotechnology USA, LLC 

Oxford Instruments 

Pfeiffer Vacuum Technology 


Plasmaterials Inc 

Plasma-Therm 

PREVAC sp. z o.o. 

Process Materials Inc 



RF VII Inc. 


SAES Getters USA, Inc. 

Scientific Instruments, Inc. 

Semicore Equipment 

Sequoia Brass and Copper 

SPECS Surface Nano Analysis 

Staib Instruments, Inc. 

Sumitomo (SHI) Cryogenics of 

America, Inc. 

Super Conductor Materials Inc 

Ted Pella, Inc. 

Thermionics Laboratories, Inc 

Thermo Fisher Scientific 

Transfer Engineering and 

Manufacturing Inc 

Trillium US 

U-C Components Inc 

Vacuum Engineering & Materials 

Co., Inc. 


VAT Inc 

VG Scienta, Inc.

Booth Company Name 

510 A&N Corporation 

502 Accu-Glass Products Inc. 

515 Advanced Chemical Company 

323 Agilent Technologies, 


308 AJA International, Inc. 

217 Alicat Scientific, Inc. 

326 American Institute of Physics 

531 Anasys Instruments 

638 Angstrom Scientific Inc 

529 Annealsys 

312 Applied Surface Technologies 

332 Association of Vacuum 

Equipment Manufacturers 

410 Asylum Research 

517 Atlas Technologies 

528 AVS - Ask The Experts 

333 AVS Special Events 

222 AVS Art Zone & Contest 

733 AVS Career Center 

733 AVS Membership & Education 

733 AVS Raffle Zone 

223 AVS E-Mail Pavilion 

701 AVS Exhibitor Technology 

722 AVS Foosball Tournament 

341 AVS Future Sites 

539 AVS History Booth 

728 AVS Publications 

506 BellowsTech, LLC 

413 Beneq 

714 BJA Magnetics 

424 Brooks Automation 

311 Bruker AXS, Inc. 

311 Bruker Corporation 

311 Bruker Optics, Inc. 

635 Cambridge NanoTech, Inc. 

435 CAMECA Instruments, Inc. 

522 Capitol Vacuum 

525 Carl Zeiss Microscopy, LLC 

727 CeramTec North America 

903 COSMOTEC Corporation 

607 CVD Equipment Corporation 

715 Denton Vacuum LLC 

423 Duniway Stockroom Corp 

409 Eagle Instrument Services 

422 Ebara Technologies 

513 Edwards Vacuum 

540 Elsevier (NY) 

205 ESI 

411 Extrel CMS 

AVS-59 

EXHIBITORS 


726 FEI Company 

519 Friatec N.A. LLC 

724 Gamma Vacuum 

633 Glas-Col. 

213 HeatWave Labs Inc. 

636 Heidelberg Instruments, Inc 

617 Hiden Analytical, Inc. 

200 Hine Automation 

500 Horiba Scientific 

706 Huettinger Electronic 

524 Impedans Ltd. 

330 Inland Vacuum Industries, Inc. 

708 Innovative Vacuum Solutions Inc. 

211 InstruTech, Inc. 

738 Intel Corporation 

401 ION-TOF USA 

328 J.A. Woollam Co., Inc. 

623 Julabo USA, Inc. 

725 Kashiyama-USA Inc. 

529 Kemstream 

201 Kimball Physics Inc. 

212 KP Technology 

301 Kratos Analytical 

210 Kurdex Corporation 

601 Kurt J Lesker Company 

627 Labtec Sales Partners LLC 

732 Lam Research 

203 Mantis Deposition Ltd 

615 McAllister Technical Services 

625 McVac Manufacturing 

214 MDC Vacuum Products, LLC 

316 MEWASA North America, Inc. 

629 Micromatter 

534 MKS Instruments 

637 Mustang Vacuum Systems 

440 National Nanotechnology 

Infrastructure Network (NNIN) 

538 Nonsequitur Technologies 

901 Nor-Cal Products, Inc. 

322 Omicron Nanotechnology USA 

537 Omley Industries, Inc. 

219 Oxford Instruments - Austin 

609 Pfeiffer Vacuum Technology, Inc. 

431 PHPK Technologies 

501 Physical Electronics 

238 Physics Today Exhibitor Lounge 

216 Phytron, Inc. 

718 Plasmaterials, Inc. 

905 Plasma-Therm 

630 Precision Ceramics USA 

219 


616 Precision Plus Vacuum Parts 

314 Prevac sp. z o.o. 

614 PVD Products 

318 R.D. Mathis Company 

416 RBD Instruments, Inc. 

641 Refining Systems 

612 RF VII Inc. 

405 RHK Technology Inc. 

716 Rocky Mountain Vacuum Tech., Inc. 

329 SAES Getters USA 

427 Scientific Instrument Services, Inc. 

709 Semicore Equipment, Inc. 

334 Semilab SDI LLC 

634 Shanghai Joysun Machinery & 

Electric Equipment Manufacture Co. 

301 Shimadzu Precision Instruments 

301 Shimadzu Scientific Instruments 

327 Solid Sealing Technology, Inc. 

317 SPECS Surface Nano Analysis, Inc. 

438 SPI Supplies 

202 Springer 

723 Staib Instruments 

618 Sumitomo (SHI) Cryogenics of 

America Incorporated 

325 Super Conductor Materials 

611 Sycon Instruments, Inc. 

209 Synergy Systems Corporation 

441 Synergy Vacuum, Inc. 

439 Tech-X Corporation 

622 Ted Pella, Inc. 

218 Telemark 

639 TGM Inc. 

717 Thermionics Vacuum Products 

417 Thermo Scientific 

416 Torr Scientific 

631 Tracs Chillers 

624 Transfer Engineering & 

Manufacturing, Inc. 

504 Trek, Inc. 

610 UC Components 

535 Vacuubrand, Inc. 

300 Vacuum Research Corp. 

628 Value Mechanical & Electrical 

Products Co., Ltd. 

428 VAT 

523 VG Scienta 

640 Welch-Ilmvac 

210 Wiley 

215 Yugyokuen Ceramics Co., Ltd. 

511 Zeon Chemicals L.P.

AVS-59 EXHIBIT HALL FLOOR PLAN 

220

PRODUCT LOCATOR 

The PRODUCT LOCATOR has been designed to 

assist AVS-59 attendees in locating products 

and services offered by the AVS-59 Exhibitors 

who are showcasing their technology in the Exhibit 

Hall. 

The Product Locator is listed alphabetically by 

product categories followed by the supplier 

and their corresponding booth location. 

221

ANALYTICAL BOOTH 

Applied Surface Technologies 312 

BJA Magnetics 714 

Brooks Automation 424 

CAMECA Instruments, Inc. 435 

Heidelberg Instruments, Inc. 636 

Horiba Scientific 500 

ION-TOF USA 401 

J.A. Woollam Co., Inc. 328 

KP Technology 212 

McAllister Technical Services 615 

MEWASA North America, Inc. 316 

Pfeiffer Vacuum Technology, Inc. 609 

Physical Electronics 501 

PVD Products 614 

RHK Technology Inc. 405 

SAES Getters USA 329 

SPECS Surface Nano Analysis, Inc. 317 

Staib Instruments 723 

ANALYTICAL INSTRUMENTATION 

Asylum Research 410 


Bruker AXS, Inc. 311 

Bruker Corporation 311 


Carl Zeiss Microscopy, LLC 525 

Extrel CMS 411 

FEI Company 726 


Hiden Analytical, Inc. 617 

Impedans Ltd. 524 



Kimball Physics Inc. 201 


Kratos Analytical 301 

MKS Instruments 534 

Omicron Nanotechnology USA 322 



Prevac sp. z o.o. 314 

RBD Instruments, Inc. 416 

RF VII Inc. 612 

Scientific Instrument Services, Inc. 427 

Shimadzu Scientific Instruments 301 



Thermo Scientific 417 

Trek, Inc. 504 

VG Scienta 523 

Yugyokuen Ceramics Co., Ltd. 215 


222 

AUGER ELECTRON SPECTROMETERS BOOTH 










BELLOWS CONTACTS 

BellowsTech, LLC 506 



BELLOWS: MINIATURE METAL 


MDC Vacuum Products, LLOC 214 


Ted Pella, Inc. 622 

BONDING TECHNIQUES 


Omley Industries, Inc. 537 

Plasmaterials, Inc. 718 

Super Conductor Materials 325 



CALIBRATION SERVICES 



Semicore Equipment, Inc. 709 

CHILLERS, COOLING SYSTEMS 



Julabo USA, Inc. 623 


Telemark 218 

Tracs Chillers 631 

CLEANING SERVICES 


Ebara Technologies 422 

Gamma Vacuum 724 


Thermionics Vacuum Products 717

CONSULTING BOOTH 

ASK THE EXPERTS - VAC TECH DIV. 528 

CVD Equipment Corporation 607 



Labtec Sales Partners LLC 627 


PHPK Technologies 431 


Synergy Vacuum, Inc. 441 

Tech-X Corporation 439 

Trek, Inc. 

COUPLINGS: FLEXIBLE SHAFT 

504 




CUSTOM VACUUM SYSTEMS 

Agilent Technologies 323 

AJA International, Inc. 308 

Atlas Technologies 517 

CeramTec North America 727 

COSMOTEC Corporation 903 


Edwards Vacuum 513 



HeatWave Labs Inc. 213 


Hine Automation 200 


Kurt J Lesker Company 601 

Lam Research 732 

Mantis Deposition Ltd 203 





Nor-Cal Products, Inc. 901 








Rocky Mountain Vacuum Tech., Inc. 716 



Thermionics Vacuum Products 717 

Transfer Engineering & Manufacturing, Inc. 624 

Vacuubrand, Inc. 535 



CONSULTING BOOTH 

Ask The Experts - Vacuum Tech. Div. 528 





Kurdex Corporation 210 







COUPLINGS: FLEXIBLE SHAFT 




CUSTOM VACUUM SYSTEMS 





































223

DETECTORS / MULTIPLIERS BOOTH 






E-BEAM GUN POWER SUPPLIES 






Sycon Instruments, Inc. 611 

Telemark 218 



E-BEAM GUN SWEEPS 





Telemark 218 


E-BEAM GUNS 












Telemark 218 



ELECTROFORMING SERVICES 


ELECTROFORMS: CUSTOM 



EQUIPMENT, USED BOOTH 

Capitol Vacuum 522 

Duniway Stockroom Corp 423 

Eagle Instrument Services 409 











FITTINGS, GASKETS, FLANGES, SEALS 

A&N Corporation 510 









Innovative Vacuum Solutions Inc. 708 











Precision Plus Vacuum Parts 616 


Solid Sealing Technology, Inc. 327 




UC Components 610 




FT-IR 

Bruker Optics, Inc. 311 





224

GAS CONTROL SYSTEMS BOOTH 

Alicat Scientific, Inc. 217 




Kemstream 529 




GAUGES, TUBES 






Instrutech, Inc. 211 










Vacuum Research Corp. 300 


GC-MS 


GLASSWARE 




ION / ELECTRON GUNS 




Friatec N.A. LLC 519 






Nonsequitur Technologies 538 







225 

ION BEAM DEPOSITION SYSTEMS/GUNS BOOTH 














LEAK DETECTORS 








Synergy Systems Corporation 209 


LITHOGRAPHY SYSTEMS 





MACHINING (BULK AND SPECIAL) 



Precision Ceramics USA 630 



MACHINING (REPAIR, REFURB, MODS) 






Super Conductor Materials 325

MAGNETRON SPUTTERING CATHODES BOOTH 








Refining Systems 641 

SPI Supplies 438 



MAGNETRON SPUTTERING EQUIPMENT 













MASS FLOW CONTROLLER/ACCESSORIES 








MATERIALS / STANDARDS 






R.D. Mathis Company 318 







Zeon Chemicals L.P. 511 


226 

MATERIALS TESTING BOOTH 

















MICROSCOPY 

Anasys Instruments 531 
















NANOFABRICATION SYSTEMS 

Annealsys 529 

Beneq 413 

Cambridge NanoTech, Inc. 635 






Plasma-Therm 905

OVENS, VACUUM BOOTH 


Glas-Col 633 







PARTICLE MONITORING 




PLANAR MAGNETRON CATHODS 








PROCESS CONTROLLERS/MONITORS 


Glas-Col 633 





Plasma-Therm 905 

Telemark 218 

PUBLISHERS 

American Institute of Physics 326 

AVS Publications 728 

Elsevier (NY) 540 

Physics Today 238 

Springer 202 

Wiley 210 


227 

PUMPS, EQUIPMENT, SERVICES & SUPPLIES BOOTH 











Glas-Col 633 


Inland Vacuum Industries, Inc. 330 


Kashiyama-USA Inc. 725 




Oxford Instruments - Austin 219 









Sumitomo (SHI) Cryogenics of America Inc. 618 







Value Mechanical & Electrical Products Co., Ltd. 628 

RAMAN SPECTROSCOPY 






Thermo Scientific 417

RF SYSTEMS/GENERATORS/POWER SUPPLIES BOOTH 


Huettinger Electronic 706 








SCANNING PROBE MICROSCOPY SYSTEMS 











SOFTWARE 



ESI 205 




SPECTROMETER ACCESSORIES 









Telemark 218 


228 

SPUTTERING DEPOSITION SYSTEM BOOTH 























THICKNESS MONITORS/MEASUREMENT 










Telemark 218

THIN FILM VACUUM COATING BOOTH 


Beneq 413 



























Telemark 218 



TOF SIMS INSTRUMENTS 






TUBING/PIPING/BELLOWS ASSEMBLIES BOOTH 















UV VIS 


VACUUM SYSTEM ACCESSORIES 














Glas-Col 633 



















Continued 

229

VACUUM SYSTEM ACCESSORIES (CONTINUED) BOOTH 

























VAT 428 



VACUUM SYSTEM REPLACEMENT PARTS 























230 

VACUUM SYSTEM REPLACEMENT PARTS CONTINUED BOOTH 







VAT 428 

VALVES 




















VAT 428 


X-RAY PHOTOELECTRON SPECTROMETERS 










VG Scienta 523

EXHIBITOR PROFILES 


707 SW 19th Avenue 

Williston, FL 32696 

Phone: 352-528-4100 

www.ancorp.com 

A&N Corporation, manufacturer of high vacuum components 

for over 40 years, offers researchers and laboratories 

an extensive line of standard high and ultra 

high vacuum components, as well as custom valves 

and process chambers. A&N products are designed to 

meet or exceed the standards required by industrial 

and academic users, such as those involved with thin 

film deposition, surface analysis, laser devices, cryogenics 

and the aerospace industry. For more information, 

visit us at www.ancorp.com. 

Accu-Glass Products Inc. 502 

700 Arroyo Avenue 

San Fernando, CA 91340 

Phone: 818-365-4215 

www.accuglassproducts.com 

Designs, engineers, and manufactures a wide range 

of ultrahigh vacuum subminiature-D electrical 

feedthroughs with air and UHV compatible connector 

fitted cable assemblies. The product range includes 9, 

15, 25, and 50 pin instrumentation, power, coaxial, and 

thermocouple-power contact combinations. The product 

range has been expanded to include: 9-pin circular 

subminiature-C electrical feedthrough mounted on a 

MINI CF flange, viewports, bellows sealed rotary 

feedthroughs, and bellows sealed linear feedthroughs. 

We maintain a large inventory of standard components 

for off the shelf delivery. Minor modifications of standard 

components, and custom engineered products 

are also available with quick delivery. 

Advanced Chemical Company 515 

105 Bellows Street 

Warwick, RI 02888 

Phone: 401-785-3434 • www.advchem.com 

Incorporated in 1972, we are a family owned and operated 

ISO-9001:2008, ISO-14001-2004, ITAR Certified 

full service precious metals refinery. We refine 

gold, silver, platinum, palladium and rhodium in our 

25,000 square foot, state-of-the-art and environmentally 

safe refinery. Our refinery handles most hazardous 

and non-hazardous precious metal bearing material for 

customers from a wide array of industries. We are also 

a leading manufacturer of proprietary precious metal 

electroplating chemistries and other specialty 

chemistries. Our Laboratory services include assaying, 

element identification and product support. 

231 



121 Hartwell Avenue 

Lexington, MA 02421 

Phone: 781-860-5489 

www.agilent.com/chem/vacuum 

Agilent Technologies, Vacuum Products Divsion (formerly 

Varian, Inc.) is a world leader providing total vacuum 

solutions for science and industry for over sixty 

years. And we provide dry vacuum from the ground up, 

from rough vacuum to UHV, as well as the vacuum 

measurement instrumentation and leak detection you 

need to stay up and running. Agilent offers a complete 

vacuum solution for any application. Product lines include: 

Ion pumps, turbomolecular pumps, dry roughing 

pumps, gauging, hardware, leak detectors, and custom 

pumping systems. Agilent also offers a variety of training 

courses to suit the need and expertise level of all 

vacuum users. Visit us at Booth #323 to see our new 

TwisTorr 304 FS turbomolecular pump. 


P.O. Box 246 

North Scituate, MA 02060 

Phone: 781-545-7365 

www.ajaint.com 

Sputtering and E-beam Systems for R&D Pilot Production. 

Static and Rotating Magnetron Sputter Sources 

for HV and UHV, Substrate Holders with Rotation, RF 

Biasing, Heating and Cooling; Sputter Targets, Microwave, 

RF and DC Power Supplies, Microwave 

Components and Plasma Sources, RF Ion/Plasma 

Sources. 


7641 North Business Park Drive 

Tucson, AZ 85743 

Phone: 520-290-6060 

www.alicatscientific.com 

Alicat Scientific is a leading manufacturer of flow and 

pressure instrumentation. Alicat has application experience 

in areas of fuel cell, semiconductor fab, vacuum 

coating, pressure delivery and secondary calibration 

standards. By leveraging strengths, experience and 

customer feedback Alicat has been successful in creating 

a versatile line of instrumentation that enables 

customers to extract additional benefit and cost savings 

from existing processes. Alicat Scientific is an ISO 

9001:2000 registered company.


American Institute of Physics 326 

2 Huntington Quadrangle Suite 1NO1 

Melville, NY 11747 

Phone: 516-576-2279 

www.aip.org 

The American Institute of Physics (AIP) is one of the 

world's largest publishers of physics information. AIP 

publishes 15 journals, including Applied Physics Letters 

and Journal of Applied Physics, the #1 and #2 most 

highly cited journals in their field; AIP Advances, a community-led, 

open access journal covering applied physical 

science; two magazines, including its flagship 

publication Physics Today; and the AIP Conference 

Proceedings series. Stop by booth 326 to learn what's 

new at AIP Publishing and for your chance to win a new 

iPad. 


121 Gray Avenue Suite 100 

Santa Barbara, CA 93101 

Phone: 805-730-3310 

www.anasysinstruments.com 

Anasys Instruments designs breakthrough, award-winning 

products that measure nanoscale material properties 

while providing high quality AFM imaging. Since 

2005, Anasys has developed and introduced three 

major award-winning technologies: nanoscale thermal 

analysis (nanoTA), nanoscale IR measurement 

(nanoIR), and AFM+ Thermal analsys (afm+). The 

afm+ system is an AFM platform which offers three important 

analytical capabilities-thermal probe technology 

(nanoTA), Scanning Thermal Microscopy and Transition 

temperature microscopy capabilities. Anasys is 

proud to introduce Lorentz Contact Resonance which 

pioneers the field of wideband nanoscale dynamic mechanical 

spectroscopy. Contact us at 805-730-3310 or 

online at www.anasysinstruments.com 

Angstrom Scientific Inc 638 

120 North Central Avenue Suite 3 

Ramsey, NJ 07446 

Phone: 201-962-7222 • www.angstrom.us 

Angstrom Scientific is the East Coast Representative 

for the Jordan Valley QC3 and D1 X-Ray Diffractometers. 

Angstrom is pleased to announce that it now represents 

the following companies: 

- Protochips: featuring the ADURO which allows for insitu 

high temp microscopy up to 1200deg C 

The new Hitachi TM3000 Tabletop SEM is now available 

from Angstrom Scientific. Providing measurement 

and control of critical processes at the nanoscale level. 

232 


Rue de la Vieille Poste PIT de la Pompignane 

Batiment T2 

Montpellier, 34055 

France 

Phone: 33-467-202-363 

www.annealsys.com 

Annealsys manufactures Rapid Thermal Processing 

and Chemical Vapor Deposition systems. RTP systems 

with cold wall chamber, high temperature lamp furnace 

(1500°C) and high vacuum capability from 3-inch to 

200 mm for RTP and RTCVD processes. MOCVD systems 

with direct liquid injection vaporizers for deposition 

of metals, oxides, nitrides, III-V and II-VI materials. 

2-inch system with in-situ annealing capability for 

MOCVD and spray pyrolysis. LPCVD batch furnace for 

4-inch wafers. Annealsys provides worldwide sales and 

service. 


15 Hawthorne Drive 

New Providence, NJ 07974 

Phone: 908-464-6675 

www.co2clean.com 

The CO2 Snow Jet Cleaning System will be demonstrated. 

The cleaning process is simple, removing particles 

of all sizes (to below 0.03microns) and also 

organic residues from surfaces. This cleaning process 

works well on many substrates, vacuum parts, analytical 

samples (AFM, XPS), optics, and many other applications. 

The Snow Jet process is, nondestructively, 

residue-free with no environmental limitations. Bring 

test samples! 

Association of Vacuum Equipment Manufacturers 

AVEM 332 

201 Park Washington Court 

Falls Church, VA 22046 

Phone: 703-538-3542 

www.avem.org 

Founded in 1969, AVEM is a non-profit association of 

companies that manufacture vacuum equipment and 

supplies. It promotes member interests and provides 

services to enhance membership value and understanding 

of the global market. Visit the AVEM booth for 

information on products made by our members and to 

learn how you can join and network with your manufacturing 

colleagues.



6310 Hollister Ave. 


Phone: 805-696-6466 • www.asylumresearch.com 

Asylum Research is the technology leader for atomic 

force and scanning probe microscopy (AFM/SPM) for 

materials and bioscience applications. Asylum's product 

line comprises the versatile MFP-3D AFM/SPM 

family– the most robust AFM with the widest range of 

capabilities and many advanced built-in modes for 

many applications including thin films, force measurements, 

PFM, nanoindenting, cells/single molecules/biomaterials, 

nanomechanical measurements, energy 

research, polymers, and more. Our Cypher AFM is 

the world's fastest and highest resolution AFM with 

atomic point defect resolution and the most accurate 

measurements possible, >10X faster AC imaging with 

small cantilevers and many ease of use features such 

as SpotOn laser & photodiode alignment. Asylum offers 

the lowest cost of ownership with our exclusive 

FIVE YEAR WARRANTY and six-month money back 

guarantee. Join us for a demonstration of our new imaging 

AM-FM technique that enables quantitative 

nanomechanical measurements. 


305 Glen Cove Road 

Port Townsend, WA 98368 

Phone: 360-385-3123 • www.atlasuhv.com 

Atlas Technologies is the world leader in aluminum vacuum. 

Aluminum chambers and components offer so 

many advantages over stainless in UHV that Atlas develops 

aluminum vacuum products that replace nearly 

every conceivable stainless component. These products 

have been used on tens of thousands of UHV, 

semiconductor, particle physics, and cryogenic applications 

worldwide. Atlas also has core strength in dissimilar 

metal bonding and provides UHV certified 

bimetallic components to demanding applications from 

cryogenics to nuclear medicine. 

AVS ASK THE EXPERTS - VAC TECH DIV. 528 

www.avs.org/forum.aspx 

Have Questions? We have answers! The Vacuum 

Technology Division is pleased to host Ask the Experts 

at booth 528. Bring us your problems with vacuum system 

specifications, troubleshooting, process control, 

contamination, and we’ll do our best to point you to a 

good solution. Ask the Experts is an, unbiased, open 

forum with the resources to discuss and help solve vacuum 

related issues. Sponsored by Duniway Stockroom, 

Brooks Automation and SAES Getters. 

233


AVS ART ZONE & CONTEST 222 

Often members of the AVS community use scientific 

images to convey information—sometimes these images 

contain aesthetic qualities that evoke a personal, 

intellectual, emotional, or spiritual response transforming 

them into objects of art. The question then is where 

does the science end and the art begin? Let your fellow 

colleagues be the judge or your artistic interpretations 

of science as art. Stop by to cast your vote for your favorite 

images. First Place: $500 !!! 

AVS CAREER CENTER 733 

Make the right connections at AVS. Visit the career center 

to post job openings or search available positions. The 

AVS Career Center provides the opportunity for attendees 

and exhibitors to find a perfect fit within a specific field of 

expertise. Private interview rooms are available. 

AVS MEMBERSHIP BOOTH 733 

Take charge of your professional career by becoming 

a member of the AVS. Your AVS membership entitles 

you to a range of professional and personal opportunities. 

Find out more by stopping by the Membership 

booth during the symposium. The booth will also offer 

an array of AVS offerings including Educational Material, 

Logo and Novelty Items. 

AVS RAFFLE ZONE 733 

Daily raffle prize tickets can be found in your registration 

kit. Drop your tickets off each exhibit day for a 

chance to win GREAT prizes!! 

AVS E-MAIL PAVILION 223 

Keep in touch with the outside world. Check your email, 

flights, print boarding passes, etc. Generously 

sponsored by SPECS Surface Nano Analysis, Inc. 

AVS EXHIBITOR TECHNOLOGY SESSIONS 701 

Exhibitors will introduce new products, services and applications 

during brief 20 minute presentations. Sessions 

are scheduled during all technical session 

breaks. Come early and receive an AVS-59 souvenir! 

AVS - SPECIAL EVENTS BOOTH 333 

FREE Caricatures and Massages! Caricature artists 

and Massage Therapists will be available during all Exhibit 

hours. You will find your tickets in your registration 

kit. Tickets must be validated at Booths 301 & 300. 

Generously sponsored by Kratos Analytical and 


234 

AVS FOOSBALL TOURNAMENT 722 

Sponsored and Hosted by Gamma Vacuum. Sign up 

as soon as the exhibit hall opens on Tuesday. Limited 

space. Great Prizes to be won !!! 

AVS FUTURE SITES 341 

AVS-60 (2013) will take place in Long Beach, California. 

Stop by booth 341 for information and goodies! 

AVS HISTORY BOOTH 539 

One of the earliest examples of the quantum theory 

and wave-particle duality is the observations by Clinton 

Davisson and Lester Germer of Low Energy Electron 

Diffraction (LEED) experimentally at Bell Labs in 1927. 

They used a glass ultra-high vacuum chamber (called 

a "tube") and fired low-energy electrons at a crystalline 

nickel target and observed that the angular dependence 

of the intensity of backscattered electrons 

showed diffraction patterns. These observations were 

consistent with the diffraction theory for X-rays developed 

by Bragg and Laue earlier. Davisson and Germer 

published notes of their electron diffraction experiment 

result in Nature and in Physical Review in 1927. The 

History booth will display a photograph of the original 

apparatus and it will also have an example of a modern 

post acceleration detection method which was introduced 

in the early 1960's at AVS meetings. Using this 

technique diffracted electrons are accelerated to high 

energies to produce clear and visible diffraction patterns 

on a fluorescent screen. Other details of the early 

use of LEED at several AVS meetings will be presented 

in a poster and in a notebook of modern examples. 

AVS PUBLICATIONS 728 

JVST A, JVST B, SSS and Biointerphases will feature 

recent journal highlights, “Meet the Editors”, iAVS, and 

details on upcoming JVST special issues: Energy Frontiers; 

Graphene and Related Materials.



1289 N. US Hwy 1 Suite #1 • Ormond Beach, FL 32174 

Phone: 386-615-7530 • www.bellowstech.com 

Ultra high vacuum edge welded bellows are able to 

withstand high vacuum applications with low leak rates 

to ensure a hermetic seal. Edge welded metal bellows 

provide the most flex in one or more directions within 

the smallest amount of space of any bellows technology 

on the market by reaching a 90% stroke length, 

and are flexible in design to accommodate round, oval 

and rectangular shapes. OD’s range from 0.358 to 26 

inch (9.09 to 660 mm). Lifter bellows can be customized 

to the size and shape required of new design 

or retrofit applications. BellowsTech high vacuum bellows 

can be configured with a variety of end pieces including 

end plates for welding, CF flanges, KF flanges, 

ISO flanges as well as custom designs. To learn about 

edge welded bellows technology and BellowsTech 

edge welded metal bellows, visit www.bellowstech.com. 

Beneq 413 

P.O. Box 262 • Vantaa, 01511 • Finland 

Phone: +358 9 7599530 • www.beneq.com 

Equipment for industrial and research use for functional 

coatings based on Atomic Layer Deposition (ALD) and 

proprietary nHALO® and nAERO aerosol deposition 

technology. Beneq ALD Thin Film Systems are for depositing 

oxides, nitrides, metals, plastics and biocompatible 

materials. Applications for optical, tribological, 

passivation and primer layer high precision (< 1%) coatings 

for complex 3D-products. nHALO® applications for coatings 

on glass and ceramics and nanoparticle synthesis. 


17 Moore Street • Leominster, MA 01453-1503 

Phone: 978-514-9919 • www.bjamagnetics.com 

Your SMART-LINK to a long term, secure Permanent 

Magnet supply chain. BJA Magnetics has the solutions 

to all of your permanent magnet and magnetic assembly 

requirements! We offer design and engineering assistance 

from the earliest stages of application design 

to the completion of the final product. Our extensive 

range of magnetic materials, coatings, sizes, and 

shapes permit us to meet your precise needs, and our 

available assortment of magnetizing and testing fixtures 

provide the ability to do on-site evaluation and 

magnetizing – at our location or yours! We have developed 

a Holmium-Cobalt substitute to Dysprosium for 

high temperature capability NdFeB magnets. Using this 

lower cost, stable supply element combination BJA can 

provide ongoing strategic supply of high temperature 

magnets. 

235 


15 Elizabeth Drive 

Chelmsford, MA 01824 

Phone: 978-262-2400 • www.brooks.com 

Brooks is a leading worldwide provider of automation, 

vacuum and instrumentation solutions for multiple markets 

including semiconductor manufacturing, life sciences, 

and clean energy. Our technologies, 

engineering competencies and global service capabilities 

provide customers speed to market, and ensure 

high uptime and rapid response, which equate to superior 

value in their mission-critical controlled environments. 

Since 1978, we have been a leading partner to 

the global semiconductor manufacturing market and 

through product development initiatives and strategic 

business acquisitions; we have expanded our reach to 

meet the needs of customers in the life sciences industry, 

analytical & research markets and clean energy solutions. 

Brooks is headquartered in Chelmsford, MA, 

with direct operations in North America, Europe and 

Asia. For more information, please visit 

www.brooks.com. 

Bruker AXS, Inc. 311 

5465 East Cheryl Parkway 

Madison, WI 53711-5373 

Phone: 608-276-3000 • www.bruker-axs.com 

Bruker AXS designs and manufactures analytical instrumentation 

for elemental analysis, materials research, 

structural and surface investigations. Our 

innovative solutions enable a wide range of customers 

in heavy industry, chemistry, pharmacy, ophthalmic, 

semiconductor, solar, life science, nanotechnology, and 

academic research to make technological advancements 

and to accelerate their progress. Innovation with 

Integrity. www.bruker-axs.com. 


112 Robin Hill Rd. 


Phone: 805-967-2700 • www.bruker-axs.com 

Bruker's high-performance metrology solutions encompass 

a wide range of technologies and techniques, including 

stylus profilers, confocal microscopes, and 

interferometric optical profilers. Each provides subnanometer 

vertical resolution for rapid, accurate, surface 

measurements. The world-renowned Dektak 

Stylus Profilers have a proven history of superior 

measurement film thicknesses, stress, and surface topography 

to accurately quantify the quality of deposited 

films. Innovation with Integrity. www.bruker-axs.com



19 Fortune Drive 

Billerica, MA 01821 

Phone: 978-439-9899 • www.brukeroptics.com 

Bruker Optics, part of the Bruker Corporation, is the 

leading manufacturer and worldwide supplier of Fourier 

Transform Infrared, Near Infrared and Raman spectrometers 

for various industries and applications 


One Kendall Square Suite B7301 

Cambridge, MA 02139 

Phone: 617-674-8800 

www.cambridgenanotech.com/ 

Cambridge NanoTech Inc., a leader in Atomic Layer 

Deposition solutions, delivers economical ALD systems 

that are capable of depositing ultra-thin films used in 

research and industrial applications. The Phoenix 

and Tahiti, our manufacturing systems, are used in 

the production of semiconductors, flat panel displays, 

photovoltaics and solid state lighting. The Savannah 

and Fiji, our research systems, are used by worldclass 

scientists to study ALD film properties such as 

electrical, anti-bacterial, UV blocking and anti-reflection. 


5500 Nobel Dr. Suite 100 

Madison, WI 53711 

Phone: 608-274-6880 • www.cameca.com 

CAMECA designs/manufactures advanced SIMS, 

LEAP, EX-300 & EPMA characterization tools. IMS-7f 

SIMS & LEAP 4000X Atom-Probe are well suited for 

PV/LED process characterization (profiling, diffusion, 

contamination, trace-elements). Our SIMS lead the 

world for semiconductor characterization - Lab & near- 

FAB, while NanoSIMS-50L provides high performance 

MEMS characterization thanks to high lateral & mass 

resolution, simultaneous with high sensitivity. Our newgeneration 

EX-300 LEXES Fab is now the fast, accurate 

non-destructive in-Fab method for shallow-dose, 

thickness and compositional measurements. Join us at 

booth 435, Wednesday, 3PM for The CAMECA LEAP 

4000TM Tutorial: Tutorial will cover the basics of atom 

probe tomography, the recent expansion into a wide 

range of applications including light emitting diodes, microelectronics, 

solar cells, geology, cosmology. biology, 

& examples of complementary correlative techniques 

such as TEM & EPMA. Wednesday Tutorial 3 PM at 

booth 435. 

236 


13897 Willard Road 

Chantilly, VA 20151 

Phone: 703-631-3933 

www.capvac.com 

Capitol Vacuum is the leading independent supplier of 

high quality parts and repair kits for industrial vacuum 

pumps. We carry spare parts, repair kits, fluids and filters 

for pumps manufactured by most major OEMs and 

offer same day shipping on most orders. We stock 

parts for dry scroll, dry claw, rotary vane, rotary piston, 

blower or booster pumps, cryopumps and offer turbomolecular 

pump repair and parts. When you’re looking 

for quality parts and quick delivery shop on-line at 

WWW.CAPVAC.COM. For technical advise or parts information, 

please call: 1-800-237-3933. 


One Zeiss Drive 

Thornwood, NY 10594 

Phone: 800-233-2343 

www.zeiss.com/microscopy 

Carl Zeiss is a leading provider of light, electron and 

ion beam microscopes and imaging solutions for industry. 

Its light microscope product line includes routine 

microscopes, stereomicroscopes, research microscopes, 

digital cameras, confocal systems and software 

solutions. The ZEISS charged particle systems 

span from SEMs, FESEMs, energy filtering TEMs and 

FIB workstations along with the newly invented helium 

ion microscopes. We provide industrial solutions such 

as particle analysis, polarization, surface topography, 

metallography, 2D/3D metrology, semiconductor technology, 

R&D applications, quality assurance and failure 

analysis.



One Technology Place 

Laurens, SC 29360 

Phone: 864-682-3215 • www.ceramtecna.com 

CeramTec North America is an important part of a successful 

global organization with a rich history producing 

a diverse range of ceramic products, ceramic materials, 

and hermetically sealed products. CeramTec is the 

world leader in ultra-high vacuum seal technologies 

(glass seals, glass ceramic seals, ceramic to metal 

seals, and metal to metal joining). CeramTec’s Ceramaseal® 

products are built to endure extreme conditions, 

whether it is an ultra-high vacuum (UHV) 

environment, temperatures ranging from cryogenic (4 

K) to 450°C, pressures in excess of 25,000 psig, corrosive 

or caustic environments, while maintaining an 

unsurpassed level of reliability and performance. Having 

pioneered the science of ceramic-to-metal sealing 

60 years ago, CeramTec continues to provide innovative 

solutions for current and future challenges in the 

marketplace. CeramTec is more than a component 

manufacturer—CeramTec is a solutions provider and 

development partner. ISO 9001:2008 


6th Floor, 4-3-4 Nihonbashi-Honcho 

Chuo-ku 

Tokyo, 130-0023 

Japan 

Phone: 81-3-3270-5761 

www.cosmotec-co.jp 

COSMOTEC Corporation has designed and manufactured 

vacuum components since its establishment in 

1992. It also is a specialized trading company that has 

agency contract with well-known company Kyocera. 

Kyocera is one of the largest ceramic companies in the 

world and it has a wide variety of products. Standard 

catalog products: Coaxial BNC, MHV, SHV, SMA, N, 

compact LEMO with double ended grounded shield 

and double ended floating shield available Compact 

and high density multipin Up to 48 pins in 2.75 CF or 

40 KF Compact and high density thermocouple Up to 

24 pairs in 2.75 CF or 40 KF Compact and high voltage 

high current Up to 100 kV 800 A Isolators With 

Swagelok®, VCR®, KF, CF, ISO and ASA flanges Accessories 

Insulators, socket contacts, in-vacuum cables 

We strongly guarantee your success! 

237 

CVD EQUIPMENT CORPORATION 607 

355 SOUTH TECHNOLOGY DRIVE 

CENTRAL ISLIP, NY 11722 

PHONE: 631-981-7081 

WWW.CVDEQUIPMENT.COM 

Our customizable EasyTube® CVD process development 

platforms are used to synthesize 1D, 2D and 3D 

nano materials and films. The EasyGas delivery systems 

are used for inert, flammable, corrosive and/or 

toxic gases delivery and our EasyExhaust abatement 

equipment, using a pyrolizer, packed tower wet 

scrubber, or both, are used for exhaust gas treatment. 

Together these systems are being used by researchers 

worldwide to advance the state-of-the-art in the materials 

field and to develop related innovative applications 

and products. Our First Nano division has the largest 

worldwide installed base of turn-key CVD research systems. 

Our Application Laboratory focuses on accelerating 

the commercialization of tomorrow’s technologies 

in the Nano/Solar/Energy generation and Energy storage 

fields and our CVD division focuses on design and 

manufacturing of custom pilot and scale-up production 

systems. www.cvdequipment.com, www.firstnano.com, 

www.cvdmaterialscorporation.com, www.stainlessdesign.com 

DENTON VACUUM LLC 715 

1259 N. CHURCH STREET 

MOORESTOWN, NJ 08057 

PHONE: 856-439-9100 

WWW.DENTONVACUUM.COM 

Denton Vacuum practically invented the science of 

sample preparation for electron microscopy. Today our 

full range of products deliver sputtering and thermal 

evaporation solutions that are fast, accurate and reliable. 

Our products for SEM and TEM sample preparation 

utilize sputtering and thermal evaporation to enable 

unique, high resolution imagery.



1305 Space Park Way 

Mountain View, CA 94043 

Phone: 650-969-8811 

www.duniway.com 

Duniway Stockroom specializes in vacuum equipment 

and supplies; ion pumps and controls; flanges, gaskets, 

bolts and nuts; vacuum gauges and controls; mechanical 

pumps and rebuild kits; supplies (oils, 

greases, hoses, bell jars) diffusion pumps and leak detectors. 

Equipment rebuilding services and a variety of 

reconditioned equipment. Free Catalog. 


420 Roberts Ave Ste 1 

Louisville, KY 40214 

Phone: 502-380-0990 

www.eaglevac.com 

Eagle is dedicated to exceptional customer service delivered 

with genuine care to every customer. We offer 

quality repair services for turbomolecular pumps, mechanical 

pumps, diffusion and diaphragm pumps. A variety 

of pumps are available as loaners and/or 

exchanges to fit our customer’s needs. Turbo Repair 

Kits and Refurbished equipment are available. All work 

and equipment include a One Year New Parts Warranty 


51 Main Avenue 

Sacramento, CA 95838 

Phone: 916-920-5451 

www.ebaratech.com 

EBARA Technologies, Inc. is a global innovator/local 

provider of vacuum pumps and advanced exhaust 

management solutions for semiconductor, photovoltaic, 

thin films and R&D. EBARA's products are backed by 

a superior global service network. EBARA continues to 

expand its role by bringing to the market: Dry Vacuum 

Pumps, Turbomolecular Pumps, Point-of-Use Abatement 

and EBARAClean -Outsourced Parts Cleaning 

Services. EBARA Technologies, Inc. also services all 

brands or dry and wet pumps. 

238 


6416 Inducon Drive West 

Sanborn, NY 14132 

Phone: 800-848-9800 

www.edwardsvacuum.com 

Edwards is a world leader in the manufacture and supply 

of vacuum and abatement solutions serving the 

most advanced industries including; scientific, solar, 

semiconductor, LED, pharmaceutical and metallurgical 

sector. Edwards offers innovative products, first class 

service, a single source of technological expertise and 

customized systems for the vacuum technology and 

semiconductor industries. Our products include vacuum 

pumps, instrumentation and components for the 

scientific instrument, R&D, lens coating, industrial & 

chemical processing industries. 

Elsevier (NY) 540 

360 Park Avenue South 


Phone: 212-633-3758 • www.elsevier.com 

Come and visit the Elsevier booth... Browse through 

the latest books and journals in the field of materials 

science and physics and take advantage of special discounts 

available to attendees. Pick up your free samples 

of leading journals such as Materials Today, 

Surface Science, Thin Solid Films and Vacuum. 

ESI 205 

32605 West 12 Mile Road Suite 350 

Farmington Hills, MI 48334 

Phone: 248-381-8040 • www.esi-group.com 

ESI, the leading provider of virtual prototyping solutions, 

offers engineering simulation solutions to model 

complex multiphysics processes for practically any type 

of reactor. ACE+, our flagship CFD multiphysics solution, 

combines plasma chemistry and transport with 

electromagnetic in an integrated environment to analyze 

the effects of key parameters on the speed and 

quality of etching, deposition and electroplating. 

Through the understanding of characteristics such as 

thermal uniformity, aspects ratios and complex electrochemistry, 

engineers can assess the scalability of 

processes and determine the impact of each process 

step. CFD-TOPO accurately captures the combined effects 

of chemical species transport and surface reaction 

in gas-solid interfaces to assess 3D shape 

evolution created by thin film deposition and etching of 

the wafer surface. These simulation capabilities allow 

for significantly reduced efforts in physical testing, resulting 

in shorter lead times and lower costs.



575 Epsilon Drive 

Pittsburgh, PA 15238 

Phone: 412-967-5738 • www.extrel.com 

Extrel is the world’s leading manufacturer of Research 

and Process Mass Spectrometers, Residual Gas Analyzers 

(RGA’s), Quadrupole Mass Spectrometry Systems 

and Components. We have been providing 

quadrupole mass spectrometry solutions to our Research 

and Industrial customers for over 45 years. Our 

instruments are known for their high performance, reliability 

and flexibility. We offer equipment for Basic Research, 

QA/QC Laboratories, Process Development 

and Process Control. Extrel’s global customers receive 

the most comprehensive application, technical and onsite 

support in the industry. 


5350 NE Dawson Creek Drive 

Hillsboro, OR 97124 

Phone: 503-726-7500 • www.fei.com 

FEI's micro-imaging innovation brings the widest range 

of electron, ion and digital light microscopy instrument 

and application expertise in the industry to customers 

worldwide. Whether seeking to make breakthrough discoveries, 

accelerate time to market or achieve competitive 

advantage, customers find their answers with FEI. 

Leading the world in thermal field emission sources, 

liquid metal ion sources and UHV FIB/SEM columns, 

FEI Component Products deliver cutting-edge performance. 


11108 Challenger Ave. #101 

Odessa, FL 33556 

Phone: 727-753-0880 • www.friatecna.net 

FRIALIT®-DEGUSSIT® oxide ceramics are used 

throughout the world in electronic and electrical engineering 

applications. Metallized oxide ceramics are the 

basis for applications in extreme environment applied 

physics. Through discussions with FRIALIT-DEGUS- 

SIT's engineers, help our customers develop products 

that specifically meet their needs in all high technology 

fields. The results are metal-ceramic components that 

satisfy unique requirements. These products, when 

used at extreme temperatures, voltages and vacuum, 

retain their functionality thanks to the oxide ceramic 

properties. 

239 


2915 133rd Street West 

Skakopee, MN 55379 

Phone: 952-445-4841 

www.gammavacuum.com 

Gamma Vacuum manufactures UHV products including 

ion and titanium sublimation pumps and controllers. 

Glas-Col 633 

711 Hulman Street PO Box 2128 

Terre Haute, IN 47802-0128 

Phone: 812-235-6167 

www.glascol.com 

With the same emphasis on quality and innovation that 

led Glas-Col to virtually creating the laboratory heating 

industry the company now offers an extensive line of 

heating and insulating jackets for the industrial market. 

Glas-Col is known worldwide for the ability to custom 

design jackets and controls for many market segments. 

Glas-Col heating jackets offer a convenient cost effective 

way to heat and maintain temperature up to 600C. 

Helping to reduce buildup in fore-lines, exhaust lines 

and pump lines, which in turn reduces the risk of damage 

to product and equipment. In addition they, provide 

clean even heat, eliminate hot or cold spots, are easy 

to install and remove, require low maintenance and 

labor cost, are energy efficient, are clean room compatible, 

are made of durable material, offer variable 

watt densities, provide multiple heating zones, are 

chemical and moisture resistant and are easily adaptable 

to even the most complex applications. 


195 Aviation Way Suite 100 

Watsonville, CA 95076-2069 

Phone: 831-722-9081 

www.cathode.com 

HeatWave Labs specializes in the vacuum tube and 

vacuum equipment industries. Our expertise includes 

thermionic cathodes and ion emitters and guns, Ion 

Sources and ionizers, Ion pumps and controllers, vacuum 

tube design, processing, specialized refractory 

materials, UHV sample heating and filament products, 

temperature controllers and related products.



2807 Oregon Court Unit E2 

Torrance, CA 90503 

Phone: 310-212-5071 

www.hmt.de 

With an installation base in over 30 countries, Heidelberg 

Instruments is a world leader in production of high 

precision maskless lithography systems. These systems 

are used for direct writing and photomask production 

by some of the most prestigious universities and 

industry leaders in the areas of MEMS, BioMEMS, 

Nano Technology, ASICS, TFT, Plasma Displays, Micro 

Optics, and many other related applications. 


37699 Schoolcraft Road 

Livonia, MI 48150 

Phone: 734-542-6666 

www.hidenanalytical.com 

Hiden Analytical manufactures an extensive range of 

high performance quadrupole mass spectrometers for 

plasma characterization studies, surface science applications, 

precision gas analysis and vacuum diagnostics. 

Showcasing the QGA, our fast response, capillary 

inlet system for process gas analysis, bio-gas and fermentation 

monitoring, catalysis studies, TGA and reaction 

kinetics. Hiden Analytical extends the pressure 

range for plasma monitoring with our HPR60-EQP Atmospheric 

Plasma Monitor. The HPR60-EQP is configured 

specifically for measurement of atmospheric and 

near-atmospheric plasma and reactive processes in 

applications including analysis of atmospheric plasma 

jets (APD), dielectric barrier discharges (DBD) and 

flame chemistry. Also showcasing MAXIM, a high-performance 

quadrupole secondary ion monitor for SIMS 

and SNMS - specifically designed for optimum sensitivity 

in surface analysis and depth profiling applications. 

Visit us at www.HidenAnalytical.com or call 1-888 

96 HIDEN 

240 


11930 Racetrack Road • Tampa, FL 33626 

Phone: 813-749-7519 • www.hineautomation.com 

Hine Automation designs, manufactures and sells vacuum 

automation systems and robotic components. We 

serve the Original Equipment Manufacturers (OEMs) 

in the semiconductor, solar, flat panel display and related 

industries around the world where cost of ownership 

is an important factor. The quality and reliability of 

our robotic components satisfy a wide range of needs; 

from the most flexible research and development environment 

to the most stringent manufacturing environment. 

Our vacuum automation systems and our 

custom solutions combine this quality and reliability 

with modular and versatile designs to meet today’s automation 

challenges with the most functional and economical 

products and services. 


3880 Park Avenue • Edison, NJ 08820-3012 

Phone: 732-494-8660 • www.horiba.com/scientific 

HORIBA Scientific is the world-leading manufacturer of 

high performance spectroscopic instrumentation. We 

offer a wide range of products for all your Molecular, 

Elemental, Micro-Analysis, and Thin Film applications. 

Our products include Raman, FLIM and EDXRF microscopes 

for rapid spectroscopy and imaging measurements; 

steady-state and lifetime fluorometers; 

Photoluminescence, particle characterization, XRF, 

spectroscopic ellipsometry (ex-situ & in-situ,) and end 

point detectors, atomic emission spectroscopy, optical 

components, gratings and high performance CCDs, 

etc., and a full range of modular TCSPC components 

including laser diodes, timing modules, single-photon 

detectors and fluorescence lifetime analysis software. 

Our recent innovations include "what you see is what 

you measure" spectroscopic ellipsometry, rapid large 

area Raman imaging, and GD-OES products for both 

depth profiling and bulk analysis. 

Huettinger Electronic 706 

111 Hyde Road 

Farmington, CT 06032 

Phone: 860-255-6555 • www.huettinger.com 

HUETTINGER offers a broad range of power supplies 

for a variety of vacuum sputtering, etching and induction 

heating applications. Outputs range from 300W up 

to 300kW at frequencies from DC to 27.12MHz. This 

year HUETTINGER is introducing a new line of DC 

power supplies for PVD, bias, cathodic arc and HIPIMS 

applications.



Unit 8 Woodford Court 

Woodford Business Park 

Santry • Dublin, 17 Ireland 

Phone: 353-1-443-4882 

www.impedans.com 

Impedans Ltd. is a leading provider of plasma diagnostic 

equipment for research and industry. Impedans' 

products are at the leading edge of plasma science and 

technology, assisting in the research and development 

of new plasma-based processes, and the optimisation 

and improvement of existing plasma processes and 

systems. Impedans' products find applications in etch, 

PECVD, deposition, and ion beam measurement applications. 


35 Howard Avenue 

Churchville, NY 14428 


www.inlandvacuum.com 

Inland Vacuum is pleased to introduce the new Inland 

geminYe PFPE inert fluid and grease product line. They 

are a drop-in replacement to the most popular PFPE 

products and all of their applications with equal performance. 

In addition, the geminYe products are miscible 

with other PFPE materials. GeminYe PFPE 

product line will also provide you with significant cost 

savings and are readily available for immediate delivery. 

Inland is your only vacuum fluid and grease 

source. 


11461 N. U.S. Hwy. 301 Suite 110 


Phone: 813-381-3930 

www.ivsonline.com 

Innovative Vacuum Solutions is a resourceful, maintenance 

firm actively servicing a variety of industries in 

the implementation and care of their industrial vacuum 

pumps. We are dedicated to customer service and can 

provide you with all your planning, product, maintenance 

and service solutions today, and in the future. 

241 


1475 South Fordham Street 

Longmont, CO 80503 

Phone: 303-651-0551-105 

www.instrutechinc.com 

InstruTech’s products are microprocessor based vacuum 

gauge sensors, utilizing the most recent advances 

in vacuum gauge sensor design and associated electronic 

controllers. Our product portfolio of vacuum 

gauge sensors and vacuum gauge controllers includes 

convection enhanced Pirani gauges, hot cathode Bayard-Alpert 

and cold cathode double inverted magnetron 

ionization gauges. InstruTech’s vacuum 

measurement products are offered with built-in or rack 

mount controllers /displays providing pressure measurements 

from 4.0E-11 Torr to 1,000 Torr. 

Intel Corporation 738 

20420 NW Von Neumann Drive MS: AG4-419 

Beaverton, OR 97006 

Phone: 503-456-2686 • www.intel.com/job 

At Intel, our vision is to create a continuum of computing 

experiences, which means endless opportunities 

with global impact for you. As an intern or recent college 

graduate, you will have access to unmatched 

manufacturing, technology, expertise and brand 

strength to make your mark on the exciting world of 

computing. Join our culture of innovation and exploration 

and enjoy the many perks we have to offer, all 

while delivering pioneering advances in hardware, software, 

education, energy and everything else our technology 

impacts. We are Intel. Sponsors of Tomorrow.



100 Red School House Road Building A8 

Chestnut Ridge, NY 10977 

Phone: 845-352-8082 • www.iontof.com 

ION-TOF is the leading European manufacturer of 

Time-of-Flight Secondary Ion Mass Spectrometers 

(TOF-SIMS). Our TOF.SIMS 5, the most successful 

TOF-SIMS instrument ever, provides detailed elemental 

and molecular information about surfaces, thin layers, 

and interfaces, with full 3D characterization. It's 

unique design guarantees optimum performance in all 

fields of SIMS applications. Utilizing our new Argon 

Gas Cluster Ion Beam 3D characterization of organic 

materials is now possible. Our Qtac100 is a high sensitivity 

Low Energy Ion Scattering system for true 

atomic layer characterization. For the ultimate resolution 

in Magnetic Force Microscopy check out our range 

of NanoScan products. 


645 M Street Suite 102 

Lincoln, NE 68508 

Phone: 402-477-7501 

www.jawoollam.com 

Spectroscopic ellipsometers for thin film characterization: 

multi-layer thicknesses, optical constants (n and 

k), in situ process monitoring and control, and more. 

New instruments extend the wavelength range to both 

vacuum ultraviolet and infrared (142nm to 33 microns). 

Offer both research-grade and high-speed metrology 

tools for process monitoring. 


884 Marcon Blvd. 

Allentown, PA 18109 

Phone: 610-231-0250 

www.julabo.com 

JULABO is a worldwide leader in liquid temperature 

control for Science, Research and Industry. Our products 

provide temperatures ranging from -95 °C to +400 

°C with up to 30 kW of cooling and 36 kW of heating 

capacity. With fast cool down times, small footprints, 

and quiet operation Julabo has a solution for your liquid 

temperature control application. 

242 

Superior Performance 

for all SIMS Applications 

Ultra high sensitivity for molecular 

species by optimized cluster ion sources 

Outstanding performance for 

low energy depth profiling 

Sophisticated software for ease of 

operation and data handling 

ION-TOF USA, Inc. 

100 Red Schoolhouse Road. Bldg. A . Chestnut Ridge, NY 10977 

Phone 845 352 8082 . Fax 845 356 6304 . sales@iontofusa.com 

www.iontofusa.com 

BOOTH 401


Kashiyama-USA Inc. 725 

41432 Christy Street 

Fremont, CA 94538 

Phone: 510-979-0070 

www.kashiyama.com 

The Dry Screw Pump innovator provides tough, durable 

and reliable vacuum pumps for the semiconductor, FPD 

and solar panel manufacturing market. Over 150,000 

sq. ft. facility & 550 employees are ISO9001-2000 & 

14001 certified to ensure quality and reliability. We are 

specialized in harsh process where corrosive gases 

and/or heavy particles present, in large volume, high 

speed vacuuming process and high vacuum stage 

process in which the pumps minimize down time, energy 

and space efficiently. Kashiyama has dominated 

many years in the dry vacuum pump market. 


Rue de la Vieille Poste PIT de la Pompignane, 

Batiment T2 

Montpellier, 34055 France 

Phone: 33-467-20-0410 • www.kemstream.com 

KEMSTREAM manufactures advanced vaporizers for 

CVD, MOCVD, ALD MLD and all gas phase processes 

and precursors. KEMSTREAM vaporizers are able to 

handle and vaporize all solid and liquid organic, inorganic 

and organometallic precursors including low 

vapour pressure, thermally labile and viscous ones. 

They work from vacuum to atmospheric pressure and 

deliver accurate, repeatable and stable vapours flows. 

KEMSTREAM vaporizers are either DLI (Direct Liquid 

Injection) Vaporizers or Sublimators. KEMSTREAM 

also manufactures liquid panels especially designed for 

feeding DLI vaporizers with air sensitive precursors and 

complete turnkey gas/vapour cabinets equipped with 

DLI vaporizers. KEMSTREAM offers standalone injection 

heads/atomizers for Spray Pyrolysis process. KEM- 

STREAM provides worldwide sales and service. 

243 


311 Kimball Hill Road 

Wilton, NH 03086 

Phone: 603-878-1616 

www.kimballphysics.com 

Compact, high access, modular UHV/HV vacuum 

chambers and fittings with internal/external mounting 

apparatus (e.g. Groove-Grabber, eV parts) enabling 

experimental set-ups with off-the-shelf components. Innovative 

electron and ion guns with matching power 

supplies ranging in energy from 1 eV to 100 keV, producing 

beams from small spots to flood beams while 

incorporating high performance rugged cathodes. Applications: 

Surface Science, Vacuum, Space and 

Plasma Physics, Neutralization, Cathodoluminescence, 

Semiconductor processing, FEL, RHEED and 

ESD. Features: modular optics, compact fiber-optic 

control, LabView, RS-232, RS-422, energy sweeping, 

rastering, pulsing, feedback stabilization. 


Burn Street Wick 

Caithness, KW1 5EH 

United Kingdom 

Phone: 44-1955-602777 

www.kelvinprobe.com 

KP Technology Ltd. would like to welcome you to Booth 

212 at the American Vacuum Society exhibition in 

Nashville, Tennessee from October 28th to November 

2nd where we will be demonstrating our UHV Kelvin 

Probe and Ambient Scanning Kelvin Probe Systems. 

Professor Iain Baikie, CEO, is the inventor of the 

unique off-null Kelvin Probe system and has spent 

thirty years developing these instruments to perform 

the highest work function resolution measurements of 

any commercial device. Our systems can be used in a 

wide range of environments from ambient to UHV and 

are used in applications ranging from thin films, corrosion, 

or solar cells. The UHV Kelvin Probe is well suited 

to a range of Surface Science studies and can be used 

to measure absolute work function, surface photovoltage, 

near Fermi-level photoemission and thermionic 

emission operating in either single point or scanning 

modes (SKP).



100 Red School House Road 

Building A 

Chestnut Ridge, NY 10977 

Phone: 845-426-6700 

www.kratos.com 

Kratos Analytical, Inc., a wholly owned subsidiary of the 

Shimadzu Corporation, proudly exhibits Kratos’ leading 

line of X-ray Photoelectron Spectroscopy (XPS) systems. 

Kratos offers a full range of XPS solutions, from 

high end, multi-technique research systems combining 

XPS, ISS, UPS, AES, etc., to relatively simple, highthroughput, 

quality control systems. Our new polyatomic 

ion gun now gives users the ability to sputter 

depth profile many organic systems previously impossible 

with traditional inert gas ion sputtering. 


343 Gibraltar Drive 

Sunnyvale, CA 94089 

Phone: 408-734-8181 

www.kurdex.com 

Supplier of Vacuum Deposition and Etch Systems for 

High Volume Production, R&D, and Pilot. Products include 

PVD, EVAP, PECVD, ALD, ARC Vacuum Deposition 

and Etch/Strip Tools. Available in In-Line, Cluster 

with Full Automation for any substrate size upto 

2300MM. Supplying Equipment to Solar Cell, Semiconductor 

(Packaging), FPD, HDI, Hard Disc, Automotive, 

Thin Film Battery, OLED, and Lighting. Turn Key 

Automation. Descrete Pieces and Roll to Roll. 


1925 Route 51 PO Box 10 

Clairton, PA 15025-3681 

Phone: 412-387-9200 

www.lesker.com 

We want to be your primary vacuum supplier. Kurt J. 

Lesker Company® is the world’s premier supplier of 

vacuum technology products including: pumps and 

oils, vacuum hardware and components, custom manufactured 

vacuum chambers, vacuum and thin film 

deposition systems, and thin film deposition materials 

for evaporation and sputtering. Stop by to see our UHV 

manipulation display, to hear about our new Isoflux 

cylindrical magnetron cathodes and systems, and to 

learn more about patent pending ALD technology and 

licensed pulsed cathodic arc technology. 

244 

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735 Arlington Avenue North 

Suite 103 

St. Petersburg, FL 33703 

Phone: 727-560-1154 

www.labtecsp.com 

A global sales and distribution partner for companies 

who provide equipment for microlithography and thin 

film processing. We can provide complete processing 

solutions for our customers or simple process tools that 

the customers can integrate into their existing processing 

lines. Additionally, we work with leading providers 

of support equipment for all our products, so we can 

provide our customers with all that they need to get up 

and running. 


4650 Cushing Parkway 


Phone: 510-572-0200 

www.lamrc.com 

Founded in 1980, Lam Research Corporation is a leading 

supplier of wafer fabrication equipment and services 

to the worldwide semiconductor industry. Lam's 

etch systems shape the microscopic conductive and 

dielectric layers into circuits that define a chip's final 

use and function. Headquartered in Fremont, California, 

Lam maintains a network of facilities throughout 

the United States, Asia, and Europe to meet the complex 

and changing needs of its global customer base. 

245 

Visit Kratos at Booth 301 

for a 

Nascar Driving Experience



2 Goodson Mews Wellington Street 

Thame, Oxfordshire OX9 3BX 


Phone: 44-1844-260-160 

www.mantisdeposition.com 

Mantis Deposition provides high quality UHV deposition 

components and systems for the thin-film coating 

community. Instruments include; RF atom/ion sources, 

gas crackers, nanoparticle sources, sputter sources, 

mini e-beam evaporation sources. Our products are 

designed for MBE, surface science, PVD, and 

nanocoatings. Accelerated metallic nanoparticles (1- 

10nm) can be deposited adherently onto any substrate 

using our unique process. Complete systems are offered. 


West 280 Prairie Ave. 

Cour d'Alene, ID 83815 

Phone: 208-772-9527 

www.mcallister.com 

We have a long history of successful one-on-one collaboration 

with our clients. Our specialty is the design 

and manufacture of the UHV hardware and analyzers 

which you, the researchers, need. We will be exhibiting 

a sample of various products, including custom UHV 

devices such as bellows-sealed positioners, XYZ manipulators, 

sample heating/cooling and transfer devices, 

linear motion feedthroughs, PLD sample & target 

manipulator, differentially-pumped rotary platform, ebeam 

evaporator and many accessories. 

246 

McVac Manufacturing 625 

6770 Old Collamer Rd. North 

East Syracuse, NY 13057 

Phone: 315-432-9257 

www.mcvac.com 

McVac is a leader in Thin Film Coating instruments 

manufacturing. Our Quartz Crystal Sensors, 

Feedthroughs, Cables, and related products are used 

widely throughout the coating industry. Our products 

are rapidly becoming the "standard tooling" in many 

production and research coating systems in facilities 

worldwide. Our standard products are always same 

day delivery, and custom variations of our standards 

are usually shipped within a few days. McVac also 

manufactures High, and Ultra High Vacuum components 

such as fittings, flanges, extensions, nipples, 

power feedthroughs, bellows, chambers, and complete 

vacuum systems. We do all of the precision machining, 

TIG welding, and helium mass spectrometer leak testing 

here at our modern facility. Repair and testing of 

vacuum equipment is also available at McVac. 


23842 Cabot Blvd 

Hayward, CA 94545 

Phone: 510-265-3500 

www.mdcvacuum.com 

Stocks thousands of off-the-shelf components and provides 

the widest range of high and ultra-high vacuum 

components in the industry. MDC’s product line detailed 

on their website, and in a catalog, consists of 

standard & custom chambers, flanges & fittings, 

valves, roughing hardware, vacuum gauge tubes, glass 

sapphire and quartz viewports, electrical and fluid 

feedthroughs, motion & manipulation instruments, thin 

film e-beam evaporation systems. MDC's Gas Delivery 

Business Unit specializes in the manufacture of complex 

gas delivery system assemblies, sub-assemblies 

and integration, UHP weldments, DOT certified cylinders 

and has high volume production capacity, with 

prototype quick-turn capability. MDC is a ISO 

90210:2008 registered company.



12841 North Bloomington Loop 

Oro Valley, AZ 85755 

Phone: 520-797-6980 

www.mewasa.com 

MEWASA North America, Inc. - a U.S. Corporation is a 

wholly owned subsidiary of MEWASA A.G. – a Swiss 

Manufacturer (ISO Certified 9001-2008) specifically for 

highest quality & reliability of precision Edge Welded 

Bellows, Bellows Components and Bellows Sub - Assemblies. 

We offer in excess of 200 standard ID / OD 

sizes of bellows for your specific application. We are 

proud of our supplier relations for 16 years to the following 

industries: Synchrotrons, Accelerators, Semi 

Conductor and related Nanotech Industries as well as 

Ultra High Vacuum OEM's & High Vacuum OEM's. Our 

core business includes: In-house design engineering 

(at no extra charge) and pro-active involvement in qualifying 

& validating our customer’s bellow specifications 

including axial and lateral stress testing for both static 

and dynamic environments. Every bellow we manufacture 

is guaranteed,100% leak tested and certified to 

10E-9 mbar l/s. We cordially invite you to visit our booth 

# 316 to inspect many samples. 

Micromatter 629 

A Div. of Advanced Applied Physics Solutions 4004 

Westbrook Mall 

Vancouver, BC V6T 2A3 

Canada 

Phone: 604-221-2286 

www.micromatter.com 

MICROMATTER specializes in thin foil deposition 

technologies and manufactures specialty products for 

industry and scientific applications.For over 40 years, 

MICROMATTER has earned a reputation for quality. 

Today, leading institutions in over 50 countries use MI- 

CROMATTER standards to calibrate their X-ray fluorescence 

(XRF) systems. Our list of satisfied 

customers includes: 

•XRF equipment manufactures 

•Pollution monitoring agencies 

•Hard drive manufactures 

•Industrial laboratories 

•Auto manufactures 

•Universities 

•Museums 

247



2 Tech Drive Suite 201 

Andover, MA 01810 

Phone: 978-645-5500 

www.mksinst.com 

A global provider of instruments, components and subsystems 

for measuring, controlling, powering and monitoring 

of critical parameters in vacuum-based 

manufacturing environments. Products include pressure 

and vacuum measuring gauges; pressure control 

valves; vacuum components and valves; mass flow 

controllers; gas analysis instruments; portable helium 

leak detectors; RF/microwave/DC plasma generators; 

digital control network devices; and portable calibration 

systems. 

Mustang Vacuum Systems 637 

7135 16th Street East 

Sarasota, FL 

Phone: 941-377-1440 

www.mustangvac.com 

For vacuum coating, metallizing, thin film deposition via 

a sputtering machine, optical coater, or batch metallizer, 

Mustang Vacuum Systems is your source for the 

best coating equipment available. Mustang Vac produces 

Vacuum Metallizing and High-Vacuum Sputtering 

Systems and Equipment. 

NNIN 440 

National Nanotechnology Infrastructure Network 

c/o Cornell University 

CNF, 250 Duffield Hall 

Ithaca, NY 14853 

Phone: 607-254-4872 

www.nnin.org 

NNIN is a network of 13 advanced user facilities available 

on an open basis for research and development 

in nanotechnology. Equipment, processes, and facilities 

are available to support projects in physics, electronics, 

optics, MEMS, materials, chemistry and 

biology. Extensive staff and technical support resources 

are available to support users at all levels in 

making productive use of our facilities 

248 

Nonsequitur Technologies 538 

20664 Carmen Loop #3 

Bend, OR 97702 

Phone: 541-312-2410 

www.nonsequitur-tech.com 

Specializes in the development, design and manufacture 

of electron and gas phase ion sources for a range 

of applications: Sample cleaning and depth profiling ion 

guns for surface analysis instruments; Primary focused 

ion sources for SIMS; High resolution focused ion 

columns for micromachining applications; Low energy 

ion sources for surface charge stabilization and sample 

cleaning; Indirectly heated cathode assemblies for Xray 

sources and electron guns; X-ray anodes; Electron 

guns for general applications. 


1967 South Oregon Street 

Yreka, CA 96097 

Phone: 530-842-4457 

www.n-c.com 

Manufacturer of high vacuum components since 1962. 

Standard components: flanges, fittings, viewports, 

feedthroughs and flexhose; isolation and pressure control 

valves; thermal products; molecular sieve, particulate 

and cold traps; thin film components; pressure 

gauges and manipulators. Custom components: chambers, 

traps, manifolds, collars and baseplates from customer 

specifications. 3D Model Library available 

on-line. An ISO 9001-2008 certified company. 


14850 Scenic Heights Road Suite 140 

Eden Prarie, MN 55344-2243 

Phone: 952-345-5240 

www.omicron-instruments.com 

OMICRON NanoTechnology is the premier supplier of 

UHV instruments for nanoscience-related research. 

We invite you to visit our booth to see the next generation 

Low Temperature (down to 4K) Atomic Force Microscope 

with enhanced LHe hold time. The Variable 

Temperature AFM/STM is now available with a non-optical 

force sensor. We will also be highlighting the 

ESCA+, and NanoSAM surface science systems. From 

thin film development to characterization, 

Omicron can help.



150 Corporate Way 

Grants Pass, OR 97526 

Phone: 541-955-9415 

www.omley.com 

Omley Industries specializes in a wide variety of vacuum 

brazed components including specialty hermetic 

feedthroughs and stand-offs; sapphire, diamond and 

beryllium windows; optical and infrared probes. Omley 

focuses exclusively on prototype and OEM production 

vacuum brazing. We braze specifically for your designs 

and applications. Limited quantities are no problem. 

Oxford Instruments - Austin 219 

4114 Todd Lane 

Austin, TX 78744 

Phone: 512-441-6893 

www.oxford-instruments.com 

Oxford Instruments - Austin Scientific specializes in the 

manufacture and service of cryogenic vacuum pumps, 

cryocoolers, and closed cycle helium compressors. Our 

support and service program takes a personal approach 

to maintaining and enhancing performance, reliability, 

and uptime. Dedicated professionals, based in 

our ISO 9001 certified manufacture and repair facility 

in Austin, Texas, have the expertise and resources to 

quickly diagnose and respond to your needs, keeping 

your systems running at peak efficiency. 


24 Trafalgar Square 

Nashua, NH 03063 

Phone: 603-578-6500 

www.pfeiffer-vacuum.com 

For more than 120 years, Pfeiffer Vacuum has set the 

standard of excellence in vacuum technology. Now, 

with two key acquisitions - adixen Vacuum and Trinos 

Vacuum - Pfeiffer Vacuum becomes a true solution 

provider, offering customers everything they need to 

create, enable and measure vacuum. Products Include: 

turbomolecular, fore vacuum, and Roots pumps, 

turbopump stations, residual gas analyzers, helium 

leak detectors, gauging and custom vacuum chambers 

and vacuum hardware. 

249 


2111 Builders Place 

Columbus, OH 43204 

Phone: 614-486-4750 

www.phpk.com 

CVI Torr Master® cryopumps meet today's need for 

fast, contamination-free, ultra-high vacuum at competitive 

costs. Benefits include higher capacities for gas 

cryoabsorption, increased pumping speeds, acceptance 

of higher radiant heat loads and shorter cooldown 

and regeneration times. The Torr Master line is used in 

fields such as vacuum coating, semiconductor production, 

particle accelerators, sputter deposition systems 

and Molecular Beam Epitaxy.



18725 Lake Drive East 

Chanhassen, MN 55317 

Phone: 952-828-6100 

www.phi.com 

Physical Electronics is a subsidiary of ULVAC-PHI the 

world's largest supplier of surface chemical analysis instrumentation. 

To learn about the latest innovations in 

our XPS, AES, and TOF-SIMS instruments, use the 

“AVS Program Guide Search Tool” at www.avs.org to 

view the times and locations of the many technical talks 

being presented or co-authored by Physical Electronics 

staff. We hope you plan to attend! Please visit us at 

booth 501 in the Exhibition Hall or on the web at 

www.phi.com. 

Physics Today 238 

One Physics Ellipse 

College Park, MD 20740 

Phone: 301-209-3043 

www.physicstoday.org 

Physics Today is the foremost physics magazine in the 

world, delivered to more than 300,000 readers in four 

different media—120k subscribers in print (30k outside 

the USA), 140k unique visitors each month, 60k registered 

for e-mail alerts, and 40k PDF downloads each 

month. Tomorrow’s vacuum and solar innovations start 

with the 64,000 researchers at government, industrial 

and university labs who read Physics Today. Exhibitors- 

-take a break while you're still inside the Exhibit Hall. 

Visit our Exhibitor Lounge; grab a coffee and play our 

Wii games--you can win a free ad in Physics Today! 

250 

2D 2D AND AND 3D 

3D 

CHEMICAL CHEMICAL IMAGING IMAGI IMAGING 

NEW 

PHI nanoTOF II · TOF-SIMS 

PHI VersaPro VersaProbe be II 

· 

XPS 

NEW 

PHI 710 Nano Nanoprobe probe 

· AES 

A DIVISION OF ULVAC-PHI 

WWW.PHI.CO 

WWW.PHI.COM 

3D IMAGE 

OF OOXIDE 

XIDE FUEL 

CELL 

2D 2D IMA IMAGE GE OF CCONTAMINATED 

ONTAAMINAT 

TED POLY POLYMER YMER FILM 

2D IMAGE 

OF NNANOCONE 

ANOCONE 

VISIT PHI IN BOOTH 501


Phytron, Inc. 216 

600 Blair Park Road Suite 220 

Williston, VT 05495 

Phone: 802-872-1600 

www.phytron.com 

Established in 1947, Phytron is a leading manufacturer 

of stepper motors and controls in extreme environments: 

vacuum, radiation, cryogenic and space. Unparalleled 

quality, innovation, full in-house 

testing&qualification combined with motors as small as 

19 mm in diameter, are just some of the reasons that 

put Phytron in the forefront of vacuum motor technology. 


2268 Research Drive 

Livermore, CA 94550 

Phone: 925-447-4030 

www.plasmaterials.com 

PLASMATERIALS, Inc., supplying high purity materials 

for the thin film industry since 1987. We make planar 

and rotatable sputtering targets, backing plates, backing 

tubes, evaporation materials, crucible liners, ebeam 

starter sources and provide bonding services. 

We serve our customers from small R&D requirements 

up through full scale production requirements. For 

more information, please contact one of our sales engineers. 


10050 16th Street North 

St. Petersburg, FL 33716 

Phone: 727-577-4999 

www.plasmatherm.com 

Established in 1974, Plasma-Therm is a U.S. manufacturer 

of advanced plasma processing equipment focusing 

on research and development systems to high 

volume production in specialty semiconductor markets 

including solid state lighting, power, data storage, renewable 

energy, MEMS, nanotechnology, photonics, 

and wireless communication. They offer leading etching 

and deposition technologies and solutions for these 

markets. Sales and service locations throughout North 

America, Europe, and Asia-Pacific meet the diverse 

needs of Plasma-Therm’s global customer base. For 

further information please visit www.plasmatherm.com. 

251 


86 Lower Tower Street 

Birmingham, B19 3PA 


Phone: 44-121-687-5858 

www.pcusinc.com 

Precision Ceramics USA is a company dedicated to the 

engineering of technical ceramics and offers a complete 

service from procurement and supply through to 

technical design and specialist machining. Since its UK 

formation in 1992, Precision Ceramics USA has gained 

a reputation for quality and service with specialist ceramic 

components engineered by the company finding 

their way into an ever-widening array of worldwide applications 

in industries as diverse as aerospace, defense, 

electronics and opto-electronics, power 

generation and offshore oil and gas production. Precision 

Ceramics opened its Florida office in late 2009 in 

response to the increasing volume of requests from US 

clients for us to address their varied needs in our industry. 

Our presence at several international trade 

shows in the US and Europe has further highlighted our 

expertise and led to a wider global understanding of 

our ability to solve technical problems and provide a 

total ceramics solution. 


6416 Inducon Drive W 

Sanborn, NY 14132 


www.precisionplus.com 

Precision Plus is the recognized leader in providing 

high quailty, low-cost vacuum pump replacement parts. 

Over 50,000 stocked parts, including oil, filters, rotors, 

shafts, plates, fittings, repair kits and more for 650+ 

OEM models. Alcatel, Becker, Busch, Ebara, Edwards, 

Fisher Scientific, Galileo, Kinney, Leybold, Pfeiffer, Precision 

Scientific, Rietschle, Stokes, Ulvac, Varian & 

Welch. Right Parts. Right Price. Right Now. Contact us 

at info@precisionplus.com or visit us online at 

www.precisionplus.com for schematics, msds, technical 

support and more!



Raciborska 61 

Rogow, 44362 • Poland 

Phone: 48-32-459-2000 • www.prevac.eu/ 

PREVAC formed in 1996 as a world leading manufacturer 

of UHV scientific research instruments and systems 

for the investigation of chemical and physical 

properties of solid state surfaces, thin films, interfaces 

and nanomaterials. We specialize in delivering custom 

deposition and analysis systems to clients who find that 

standard, off the shelf “solutions” simply do not meet 

the expectations demanded by the very latest cutting 

edge experimental investigations. Our products, including 

ion, electron, x-ray, UV and thermal sources, chambers, 

sample conditioning, transfer and manipulation 

are fabricated entirely in-house and are installed globally 

and used by many of the world’s leading researchers. 


35 Upton Drive • Suite 200 

Wilmington, MA 01887 

Phone: 978-694-9455 • www.pvdproducts.com 

PVD Products sells a complete line of high quality thin 

film deposition systems including magnetron sputtering, 

laser deposition and thermal and electron beam 

evaporators for both R&D and proto-type production 

applications. All systems can be fully computer controlled 

and load-locked. PVD Products manufactures 

components such as the Titan magnetron sputter 

source, substrate heaters, and PLD target manipulators. 

We also provide in-house deposition and 

SEM/EDS services. 


2840 Gundry Avenue 

Signal Hill, CA 90755 

Phone: 562-426-7049 • www.rdmathis.com 

The R. D. Mathis Company specializes in the manufacture 

of Hi-Vacuum evaporation sources and continues 

to support the thin film coating and metalizing 

industries as we have since 1963. We offer a comprehensive 

selection of tungsten, molybdenum and tantalum 

sources through our catalog as well as custom 

fabrication to meet your specific coating needs. We 

also offer our “LV Series” Low Voltage High Current 

Power Supplies and our “GP 100 “ Inert Gas Purifier to 

compliment your evaporation process. Please stop by 

our booth , visit our website, or call for more information 

and a copy of a catalog. ISO9001:2008, 

AS9100:2004B 

252 

BOOTH 318



2437 NE Twin Knolls Dr. Suite 2 

Bend, OR 97701 

Phone: 541-330-0723-310 

www.rbdinstruments.com 

Acquisition instrumentation that accurately measures 

and data logs ion and electron currents in vacuum systems. 

Sputter Ion Sources. Compact Auger Analyzer. 

High Vacuum UV Water Desorption System. Service, 

replacement parts, and software upgrades for previous 

generations of Physical Electronics (PHI, Perkin-Elmer) 

surface analysis systems and components. Viewports 

and Custom Coatings for Vacuum Applications Filament 

Rebuild Services X-ray Anode Recoating Services 

Zero-Clearance UV Emitter Water Desorption 

System. 


P.O. Box 72466 

Las Vegas, NV 89170 

Phone: 702-368-0579 

www.refiningsystems.com 

Industry leader in the manufacturing of precious metal 

products. The Refining Systems product line has been 

tailored to meet the increasing needs of various hightech 

industries, research facilities, mining laboratories 

and countless other trades. We manufacture custom 

made sputtering targets, evaporation materials, rods, 

sheets, wires, foils, shots, tubing, discs and other hightech 

products. 


1041 Glassboro Rd. Bldg E-1 

Williamstown, NJ 08094 

Phone: 856-875-2121 

www.rfvii.com 

RF VII Inc. manufactures quality RF equipment for use 

in Semiconductor, Analytical, Medical, Induction Heating, 

and Coating processes. We manufacture RF Generators 

and Auto-Tuners with power levels from 100 - 

3500 watts with frequency bands from 1 - 40 MHz. All 

our RF Generators are lightweight and Air Cooled ! We 

offer repair on many different brands of existing RF 

Equipment with fast turnaround for our production environment 

customers. Our commitment is to the customer 

and their requirements in RF related concerns. 

Offering phone and on-site assistance for RF service, 

coupling and control for all RF source processes. We 

offer a full range of RF equipment parts including new 

power tubes for older RF generators. 

253 


1050 East Maple Road 

Troy, MI 48083 

Phone: 248-577-5426 

www.rhk-tech.com 

Imaging the Future of Nanoscience: RHK is the chosen 

company for fundamental science at the atomic scale. 

Our UHV STM, 4-probe STM, AFM, and controllers are 

engineered for the advanced researcher but also comfortably 

systemized for the first-time buyer. To choose 

RHK is to experience peak performance, scalability, 

compatibility, and value. Celebrating 20 years of commitment 

to customer and quality, we partner with the 

researcher to support our products over a lifetime of 

experimental success. 


14510 E Fremont Ave. 

Centennial, CO 80112 

Phone: 303-799-5882 

www.rmvac.com 

Rocky Mountain Vacuum Tech manufacturesVacuum 

Systems and Components used in research and production 

environments. RMV supplies revolutionary vacuum 

systems to those customers that expect 

exceptional quality and reliability at an affordable price. 

Through the Mark IV line of vacuum products, RMV 

carries a broad selection of versatile vacuum solutions, 

ranging from Desktop options (such as the new Desktop 

R&D Deposition System) to Large Area Coaters capable 

of mass producing Solar Cell Components and 

Systems. 


1122 East Cheyenne Mountain Blvd 

Colorado Springs, CO 80906 

Phone: 719-576-3200 

www.saesgetters.com 

SAES Getters will display its world-leading getter solutions 

supporting various industrial and scientific applications. 

Exhibit highlights will be: MK5 SORB-AC and 

CapaciTorr pumps for vacuum systems; WaferGetter 

pumps for semiconductor process chambers; Integra- 

Torr sputtered NEG coatings for particle accelerators; 

getter solutions for MEMS, flat panel displays, cryogenics, 

lamps and more.


BOOTH 329 

254 


1122 East Cheyenne Mountain Blvd 

Colorado Springs, CO 80906 

Phone: 719-576-3200 

www.saesgetters.com 

SAES Getters will display its world-leading getter solutions 

supporting various industrial and scientific applications. 

Exhibit highlights will be: MK5 SORB-AC and 

CapaciTorr pumps for vacuum systems; WaferGetter 

pumps for semiconductor process chambers; Integra- 

Torr sputtered NEG coatings for particle accelerators; 

getter solutions for MEMS, flat panel displays, cryogenics, 

lamps and more. 


1027 Old York Road 

Ringoes, NJ 08551 

Phone: 908-788-5550 

www.sisweb.com 

Scientific Instrument Services is a leading global 

provider of supplies and services for Scientific Instrumentation. 

SIS specializes in the manufacture of filaments 

for spectrometers and related instrumentation. 

Contract Machining. SIS has expanded our machine 

shop for the manufacture of parts for scientific instruments. 

Our shop includes ultramodern CNC equipment 

for the machining of parts from virtually all materials to 

the high precision standards and cleanliness required 

by our customers. 


470 Commerce Way 

Livermore, CA 94551 

Phone: 925-373-8201 

www.semicore.com 

Semicore Equipment, Inc., a Silicon Valley based manufacturer, 

supplies, services and supports Sputtering, 

Evaporation, Thin Film PVD systems for the electronics, 

optical, solar energy, medical, military, academic 

and related high technology industries worldwide. 

Semicore’s products provide quality coatings on a variety 

of materials including plastic films, glass, ceramics, 

metals and hybrid substrates and range from R&D 

to high-performance production level systems at a 

competitive price.


Semilab SDI LLC 334 

3650 Spectrum Blvd. Suite 130 

Tampa, FL 33612-9446 

Phone: 813-977-2244 

www.semilab.com 

Metrology equipment for R&D and the characterization 

of semiconductor and photovoltaic materials for monitoring 

the manufacturing process of semiconductor devices 

and solar cells. We offer a variety of 

measurement techniques; most of them are non-contact 

and non-destructive. Many of our technologies can 

be flexibly integrated in different platforms, ranging 

from simple handheld devices and table-top systems 

with high resolution mapping capability to fully automated 

stand-alone production control tools for midrange 

and high-level fablines. We also offer in-line 

measurements for solar cell production lines. 

Shanghai Joysun Machinery & Electric 634 

Equipment Manufacture Co., Ltd. 

No.385 Kaiqing Road 

Pudong, Shanghai 201201 • China 

Phone: 0086-021-68915100 

www.joysun-machinery.com 

X series vacuum pump of our company is single stage 

sliding van rotary vacuum pump of oil sealed type .This 

vacuum pump is the main equipment to create the vacuum 

environment of low and medium vacuum .It can 

be exclusively used or be the backing vacuum pump 

of the mechanic booster and turbo molecular vacuum 

pump. We introduced in advanced technology form 

overseas, and the vulnerable parts are the imported 

components or Made in imported materials, so that it 

can completely replace the similar type form the overseas. 

Shimadzu Precision Instruments 301 

2350-A Walsh Avenue 

Santa Clara, CA 94517 

Phone: 408-566-0960 

www.shimadzuvacuum.com 

SPI is comprised of three groups; Aircraft Group, Medical 

Systems Group, and the Semiconductor Equipment 

Group. SPI markets and sells various aircraft parts, medical 

equipment, and industrial machinery, including an extensive 

line of Turbo Molecular Pumps. 

255 


7102 Riverwood Drive 

Columbia, MD 21046 

Phone: 410-381-1227 

www.shimadzu.com 

Shimadzu’s new line of UV-Vis spectrophotometers, 

offer feature/cost benefits that outclass the competition. 

The high photometric range of 8.5 abs for the UV-2700 

and extended spectral range to 1400 nm for the UV- 

2600 make these ideal bench systems for the coating 

and ink industry. The full array of feature-rich accessories 

and software make for complete systems that 

can handle the most demanding tasks. With its 30000:1 

S/N sensitivity, stabilizing dynamic alignment interferometer, 

and electronic humidity protection, the FTIR 

IRAffinity-1 is the best choice for characterization of 

films, inks and coatings. The full-sized sample compartment, 

complete range of accessories, and FTIR microscope 

options make the IRAffinity-1 the instrument of 

choice for all development and production needs. Find 

your solution with Shimadzu. 


44 Dalliba Ave. Watervliet Arsenal 

Watervliet, NY 12189 

Phone: 518-874-3600 

www.solidsealing.com 

Solid Sealing Technology specializes in the design and 

manufacture of hermetic products using metalizing, 

brazing, glass-ceramic sealing, welding, and critical 

mechanical assembly. Products include Vacuum 

Feedthroughs; Coaxial and Multi-Pin Connectors; 

Thermocouple Connectors; and Isolators. SST provides 

sealing solutions for high temperature, ultra-high 

vacuum and high pressure environments and is a 

Global provider of industry standard and custom designed 

products. 


Voltastr. 5 

Berlin, 13355 • Germany 

Phone: 49-30-467824-0 

www.specs.com 

SPECS manufactures systems and components for 

surface analysis, based on electron spectroscopy and 

imaging techniques such as SPM and LEEM. In customized 

systems SPECS integrates facilities for thin 

film preparation and in-situ analysis in Vacuum systems 

from UHV to high pressures.


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Booth 301 

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256 

www.specs.com 

Visit us at booth number 317



569 East Gay Street 

West Chester, PA 19380 

Phone: 610-436-5400 • www.2spi.com 

SPI Supplies is a worldwide leading manufacturer and 

distributor of sample preparation equipment and consumable 

supply items for electron microscopy and 

other vacuum laboratory applications. A full line of 

greases, fluids and wipers for all vacuum applications. 

Cryo Gloves, dewars and view ports. Vacu Prep II 

bench top vacuum evaporator. Products include 

Apiezon, Braycote, Fomblin, Santovac, TorrLube and 

Vacseal. 

Springer 202 

233 Spring street 


Phone: 212-460-1529 

www.springer.com/?SGWID=0-102-0-0-0 

Springer is a leading publisher of books and journals 

in engineering and physical sciences. Visit us today at 

Booth #202 to browse through a selection of our latest 

titles with a special discount off books for AVS conference 

participants. Free sample copies of journals are 

also available. Visit us online at www.springer.com. 


101 Stafford Court 

Williamsburg, VA 23185 

Phone: 757-565-7000 • www.staibinstruments.com 

STAIB Instruments designs/manufactures innovative, 

high-performance, electron-optical equipment for insitu 

material analysis. Electron Guns for surface studies, 

RHEED to study structure and quality of thin films, 

Energy spectrometers (Auger, XPS, UPS) for analytical 

studies. SEM with micro/nano-focus guns, Photo-ElectronEmission 

Microscopes (PEEM), Custom analytical 

chambers and instruments. 

Sumitomo (SHI) Cryogenics of 618 

America Incorporated 

1833 Vultee Street • Allentown, PA 18103 

Phone: 610-791-6700 • www.shicryogenics.com 

Marathon® CP Series Cryopumps from SHI Cryogenics 

Group are specifically designed to meet the needs 

of high vacuum processes. Ranging in size from 8 to 

20 inches, they can be readily maintained without 

breaking vacuum or removing the cryopump from the 

chamber for return or replacement. As a result, serviceability 

maximizes production uptime and lowers the 

total cost of ownership. 

257 


391 Spook Rock Industrial Park 

Suffern, NY 10901 

Phone: 845-368-0240 

www.scm-inc.com 

Serving vacuum technology since the 80's, we specialize 

in sputtering targets, evaporation materials for 

semiconductor, optical, display technology, magnetic 

media, electronic, solar panel and allied industries. Materials 

are available from Aluminum to Zirconium including 

their alloys and compounds. Also support electron 

beam evaporation by manufacturing evaporation materials 

and crucible liners in 14 different materials for 

all major e-gun systems. Custom crucibles are also 

available. 


6757 Kinne Street 

East Syracuse, NY 13057 

Phone: 315-463-5297 

www.sycon.com 

Sycon Instruments, Inc. is a manufacturer of Thin Film 

Deposition Monitors and Controllers utilizing the crystal 

sensing technique. These products include the STC- 

2002 & 2000A Controller, STM-100/MF, Thickness 

Monitor. The EBS-530, E-Beam Sweep Control.The 

STM-1 Monitor with integrated oscillator for use with 

your PC. The SRT-422 E-Beam Source Indexer. The 

T-3000 Deposition Power Supply. The VSO-100 In- 

Vacuum sensor oscillator and a complete line of sensors, 

crystals and feedthroughs. 


16241 6300 Road Suite A 

PO Box 177 

Montrose, CO 81402 


The Original Oil-Free scroll vacuum pump - Anest Iwata 

ISP/DVSL Scroll vacuum pumps and compressors, 

OEM Parts/Service. RGA & Turbo Carts; High-capacity 

oil-free scroll and dry screw blower pumping systems; 

We are the authorized distributor for Anest Iwata scroll 

pumps and compressors and LOT Dry Screw Pumps; 

with pumping capacities from 2.1 cfm to 4000 cfm. We 

offer complete OEM maintenance services for most 

roughing and highvacuum pumps including repairs, 

parts and training.



2510 North Townsend 

PO Box 2084 

Montrose, CO 81402 

Phone: 970-240-9228 

www.synergyvacuum.com 

Your home for Authorized Sales & Service of The Original 

ANEST IWATA Oil-Free Scroll Pumps + exciting 

new lines: The fully automated and PLC controlled 

SVT-50 Turbo Cart; the SVR-50 RGA Cart; a new 

lineup of diaphragm pumps; the DVSL 100B & 501B 

high vapor pumping capacity oil-free scroll pumps. With 

all our products, we offer Total Support TM - customizable 

maintenance & exchange; See us for OEM parts 

& service for ISP, ESDP, GVSP, DS, & DIS pumps. 


5621 Arapahoe Avenue 

Boulder, CO 80303 

Phone: 303-448-0727 

www.txcorp.com 

A leader in the development of scientific software, presents 

Vorpal: An Electromagnetics and Plasma Code 

Suite. Vorpal is the most powerful computational application 

for modeling the detailed physics needed to understand 

the complex plasma phenomena found in 

processing chambers, RF source production, medical 

physics, and more. We will demonstrate new features, 

discuss our new appliances for simplifying the simulation 

of your most challenging problems, and work with 

you to solve your problem. 


PO Box 492477 

Redding, CA 96049-2477 

Phone: 530-243-2200 

www.tedpella.com 

Ted Pella, Inc offers versatile compact bench top vacuum 

coaters for thin film applications which can be 

equipped with high resolution thickness monitors and 

multi-angle rotary stages. They also offer a full line of 

vacuum pumps, vacuum parts and evaporation supplies 

for research applications and small scale production. 

On display will be a large selection of supplies, 

consumables, tools and preparation equipment for 

SEM, TEM, AFM, and surface science sample preparation, 

quality control and laboratory applications. 

258 

Telemark 218 

1801 SE Commerce Avenue 

Battle Ground, WA 98604 

Phone: 360-723-5360 

www.tfi-telemark.com 

TELEMARK offers evaporation components, including 

electron beam sources, e-beam power supplies, optical 

monitors, plasma chemistry monitors, water vapor cryotraps, 

magnetic fluid feedthrus, quartz crystal deposition 

controllers, Ion Beam Systems, and related 

accessories. 

TGM Inc. 639 

1810 North Glenville Drive Suite 108 

Richardson, 75081 

Phone: 972-761-9101 

www.tgm-incorporated.com 

We are a provider of a complete turnkey patented 

heater jacket system for vacuum lines downstream 

from the IC manufacturing tools. From its beginning in 

1988, TGM has been an innovator of thermal efficiency 

solutions for an impressive body of industries including: 

aerospace, food processing, pharmaceutical, petrochemical, 

telecommunication, transportation, and semiconductor 

manufacturing. TGM also continues a quality 

heat trace and mechanical insulation contracting division 

specializing in controlled gas supply lines. 


1842 Sabre Street 

Hayward, CA 94545 

Phone: 510-538-3304 

www.thermionics.com 

Manufactures vacuum components, systems and accessories 

for production and research applications including: 

our VE-160 and VE-240 PVD coating system; 

our line of LHe cooled manipulators; our 1500cc capacity 

IC series eGun; our production class HC series 

of e-Guns with dual filament; our research class 

RC series eGuns; PyraFlat rectangular flange; 

TriMetl (aluminum to stainless and copper to stainless) 

flanges and fittings; gate and poppet valves; sample 

handling and transfer systems; ion pumps; 

maTChed thermocouple gauges; mechanical, electrical 

and fluid feedthroughs



5225 Verona Road • Madison, WI 53711 

Phone: 608-276-6100 

www.thermo.com/surfaceanalysis 

Thermo Scientific will display the K-Alpha Materials 

Characterization instrument and the DXR Raman Microscope. 

Using X-ray Photoelectron Spectroscopy 

(XPS), the K-Alpha enables rapid, accurate and costeffective 

quantitative monitoring of the surface chemical 

composition of the top few nanometers of solid 

materials. The DXR Raman microscope is a researchquality 

tool designed specifically for today's multi-purpose 

analytical labs. 

Tracs Chillers 631 

790 Route 16 • Ossipee, NH 03864 

Phone: 603-387-7830 • www.tracschillers.com 

Manufacturers of process cooling equipment - Air 

cooled chillers, water cooled chillers and water to water 

heat exchangers. Tracs uses the well proven plate heat 

exchanger connected to a PID controller to provide precise 

temperature control. Modular construction allows 

Tracs to provide custom process cooling solutions at a 

price competitive with "off the shelf" chillers. Several innovations 

in design have dramatically reduced the 

number of both refrigeration and water joints within the 

chiller to virtually eliminate the possibility of leaks, maximizing 

the up time of your process. Products are available 

from 1 kW to 32 kW heat removal capacity with a 

wide range of pumps to meet the most demanding 

processes. All of the products can be configured to 

meet world wide electrical configurations. Each chiller 

is assembled by hand and is subjected to 3 days of rigorous 

testing prior to shipment. Pleasing, no nonsense 

packaging will compliment your process tools. 

Torr Scientific Ltd 416 

Pebsham Lane • Bexhill-on-Sea 

East Sussex, TN40 2RZ • UK 

http://www.torrscientific.co.uk/ 

An innovative company that brings together a unique 

range of expertise, skills and equipment from the 

worlds of thin film vacuum coating, vacuum instrumentation 

and electro-optics. The company manufactures 

X-ray anodes, UHV Viewports and processes anti-reflective 

coatings. Torr Scientific was established in 

1998 and the employees of the company have many 

years of experience in the UHV and Electro-Optical industries. 

Products are manufactured in cleanroom conditions 

and facilities include vacuum furnaces, TIG 

welding, helium leak testing, e-beam and sputter coating 

systems and a UV-Vis spectrophotometer. 

259 

smarter 

spectroscopy 

Advanced materials offer unique properties linked 

to their physical forms and structures. As non- 

destructive analytical techniques, Raman and 

surface analysis spectroscopy are indispensable 

tools. The Thermo Scientifi c DXR Raman and the 

Thermo Scientifi c K-Alpha XPS combine research- 

grade performance with unmatched ease of use. 

That’s smarter spectroscopy. 

© 2012 Thermo Fisher Scientifi c Inc. All rights reserved. 

for advanced 

materials 

• see what’s possible at thermoscientifi c.com/carbon 

Thermo Scientifi c 

DXR Raman Microscope 

Thermo Scientifi c 

K-Alpha XPS System 

BOOTH 417



47697 Westinghouse Drive Suite 100 


Phone: 510-651-3000 

www.transferengineering.com 

Transfer Engineering provides innovative products for 

OEM, Production and R&D customers in Semiconductor, 

Media, Sputter Deposition and R&D markets. Core 

expertise is in handling, transporting, positioning, and 

manipulation of samples, semiconductor wafers, substrates, 

flat panels and other materials in HV, UHV and 

other controlled environments. Product lines include 

transfer arms, sample transfer and loadlock systems 

including MASCOT and TEAM-Mate MESC compatible 

wafer transport systems. 


11601 Maple Ridge Road 

Medina, NY 14103 

Phone: 585-798-3140 

www.trekinc.com 

Trek excels in the design/manufacture of off-the-shelf 

and custom high-voltage power amplifiers and supplies 

for demanding applications in the physics community. 

Robust, high performance designs offer voltage range 

to ±60kV, slew rates to 1500V/µs, current to 10A and 

bandwidth to 3MHz. Applications include poling of nonlinear 

optical crystals, ion beam deflection, and numerous 

fields of research. Trek’s electrostatic 

measurement instruments deliver excellent results in 

non-contacting or contacting environments. 

sales@trekinc.com 


POB 430 

Morgan Hill, CA 95038 


www.uccomponents.com 

UC Components manufacturer of RediVac Vented, 

Coated, Plated, Polished & Cleaned Fasteners & RediVac 

Cleaned and Vacuum Baked O-Rings for vacuum 

applications. All RediVac Products are Precision 

Cleaned & Class 100 Packaged for immediate vacuum 

use. Reduce pump-down times & contamination in your 

UHV system! UC now offers a full line of RediVac 

Slot-Vented and Gold Plated Fasteners in Inch and 

Metric standards. Call for our latest catalog or visit & 

buy on-line at www.uccomponents.com. 

260 


11 Bokum Road 

Essex, CT 06426 

Phone: 860-767-5341 

www.vacuubrand.com 

Exhibiting quiet, compact, low-vibration, oil-free diaphragm 

pumps for backing/roughing high vacuum 

systems, for corrosive chemical evaporation and other 

OEM applications. Pumps have long service intervals 

in continuous duty, and run clean, without oil mist or 

particulate discharge. Frequency-controlled motors 

available. Also, chemical-resistant electronic gauges 

and controllers with optional computer interface. 


2419 Smallman Street 

Pittsburgh, PA 15222 

Phone: 412-261-7630 

www.vacuumresearch.com 

Manufacturer for 50 years of a broad line of high vacuum 

valves. Throttle valves, poppet style valves, rectangular 

port valves, and gate valves from ISO-63 to 

ISO-800 & CF 2.75 to 14 inch OD. Valves with ANSI 

and JIS flanges to 32 inch. Also Pirani, convection and 

diaphragm gauges from 10-5 Torr to 2 atmospheres. 

Rotary vane pumps from 3 to 64 cfm, 6 to 108 m3/hr. 

We will have our throttle valve in operation in our booth. 

Value Mechanical & Electrical 628 

Products Co., Ltd. 

Jiulong Avenue 

Western Industrial Park of Wenling City 

Zhejiang, 317500 Wenling • China 

Phone: 86-576-86992909 

www.valuevacuum.cn 

VALUE Company is absorbed in researching, developing 

and manufacturing vacuum pumps. We keep creating 

value for customers by our techniques and 

innovations, and also offering the best products with 

best services. We achieved ISO9001 administering 

certification, CSA, UL, CE, CCC security certification, 

and also passed the ROHS and WEEE testing project. 

All our products measure up with the prescribed quality, 

security and eco-standards.


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VAT 428 

500 West Cummings Park Ste. 5450 

Woburn, MA 01801 

Phone: 781-935-1446 • www.vatvalve.com 

VAT is the worldwide leader in vacuum valve technology. 

VAT has developed and patented well-known sealing 

technologies like VATLOCK, VATRING and 

MONOVAT. VAT vacuum valves are used in most of all 

in the following areas: Semiconductor and Flat Panel 

Display Manufacturing; Glass and Tool Coating; Metallurgy, 

Surface Analysis; High Energy Physics; Synchrotrons; 

Laser Technology; Space Simulation and many 

more. VAT products include: Angle valves, gate valves, 

transfer valves, control valves, isolation valves, pendulum 

valves, valves designed for custom applications. 


235 Main Street 

Pleasanton, CA 94566 

Phone: 925-249-0204 • www.vgscienta.com 

VG Scienta is the world’s premier supplier of UHV vacuum 

components, surface analysis instruments, and 

UHV systems to industry, R&D firms, and the scientific 

community. VG Scienta remains at the cutting edge of 

science with over 40 years experience in HV and UHV 

technology 

Welch-Ilmvac 640 

5621 W. Howard Street 

Niles, IL 60714 

Phone: 847-676-8800 • www.gardnerdenver.com 

Gardner Denver, founded in 1859, is a global manufacturer 

of industrial compressors, blowers, pumps, loading 

arms and fuel systems. The Company has 40 

manufacturing facilities located in the Americas, EMEA 

and Asia Pacific with offices in 36 different countries 

Wiley 210 

111 River Street 

Hoboken, NJ 07030 

Phone: 201-748-8893 • www.wiley.com 

Wiley publishes an enormous range of top quality consumer, 

professional, educational and research material, 

from the well-known Frommer’s and ‘For Dummies’ 

guides, to college textbooks, and highly ranked peerreviewed 

primary research . Wiley offers libraries and 

individuals 1250 online journals, thousands of books in 

print and online, reviews, reference works, databases, 

and many other innovative resources for teaching and 

learning, including across the social sciences and humanities. 

For more information, visit www.wiley.com.



1-46-2 Kamiikedai Otaku 

Tokyo, 1450064 Japan 

Phone: 81-3-3726-4455 

www.yugyokuen-ceramics.com 

“Good things come in small packages.” We are a 

Japanese small-medium size ceramic manufacturer 

but we can cooperate to the greatest extent possible in 

what big ceramic companies cannot do. 70% of our domestic 

customers are listed in Japanese securities 

market is a corroborate evidence. Our ceramics and 

ceramic assembly products are widely recognized in a 

competitive Japanese market because excellent electric, 

thermal and chemical characteristics meet our customer’s 

requirements. Also our ceramic assembly 

products such as metalized, glazed and brazed ceramics 

create a high-performance of client’s equipments. 

Zeon Chemicals L.P. 511 

4111 Bells Lane 

Louisville, KY 40211 

Phone: 512-775-2000 

www.zeon.co.jp/business_e/enterprise/imagelec/i 

magelec.html 

ZEON is an R&D-centric innovator of next generation 

etch gases. Currently, ZEON has been exploring the 

challenges associated with the next generation technologies 

in processes such as SiN spacer, low-k, TSV, 

and others. Our skilled team of research scientists partner 

with the industry’s leading semiconductor manufacturers 

to create a wealth of knowledge and expertise 

specifically designed to achieve these goals. Two 

IBM/ZEON joint papers will be presented during this 

conference. 

262 

WELCOME AVS 

NEW EXHIBITORS 

Anasys Instruments 

Angstrom Scientific Inc 

Azbil North America 

Bruker AXS, Inc. 

Bruker Optics, Inc. 

COSMOTEC Corporation 

ESI 

Glas-Col 

Heidelberg Instruments, Inc. 

Julabo USA, Inc. 

Labtec Sales Partners LLC 

Mustang Vacuum Systems 

Precision Ceramics USA 

Semilab SDI LLC 

Shanghai Joysun Machinery & 

Electric Equipment Manufacture Co.,Ltd. 

TGM Inc. 

Torr Scientific 

Tracs Chillers 

Value Mechanical & Electrical Products Co., Ltd. 

Welch-Ilmvac

BOOTH 301 

263 

BOOTH 301

BOOTH 323 

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With advanced spiral drag stage design, the Agilent Turbo-V 750 and 

Turbo-V 850 TwisTorr pumps deliver: 

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pumps, lowering your cost of ownership without loss of vacuum 

performance. 

Learn more: www.agilent.com/chem/twistorr 

264

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265

AVS-60 

LONG BEACH CONVENTION CENTER 

LONG BEACH, CALIFORNIA 

Symposium Dates: October 27 - November 1, 2013 

Exhibit Dates: October 29 - 31, 2013 

266

AVS Co-sponsored/endorsed 

2013 Topical Conferences 

PCSI 39 (40 th International Conference on the 

Physics and Chemistry of Semiconductor Interfaces) 

January 20–24, 2013, Waikoloa Beach, HI 

http://www.pcsiconference.org 

2013 International Conference on Frontiers of 

Characterization and Metrology for Nanoelectronics 

March 23–28, 2013, Gaithersburg, MD 

http://www.nist.gov/pml/div683/conference/index.cfm 

ICMCTF 2013 (International Conference on 

Metallurgical Coatings & Thin Films) 

April 29–May 3, 2013, San Diego, California 

http://www2.avs.org/conferences/ICMCTF 

EIPBN 2012 (The 57th International Conference 

on Electron, Ion, and Photon Beam Technology 

and Nanofabrication) 

May 28–31, 2013, Nashville, Tennessee 

http://www.eipbn.org 

Surface Analysis 2013 – The 35th Symposium 

on Applied Surface Analysis 

June 3–5, 2013, Urbana, Illinois 

267 

21st International Conference on Ion Beam Analysis 

June 22–29, 2013, Seattle, WA 

http://www.emsl.pnl.gov/root/meetings/iba/ 

IVNC 2013 26th International Vacuum 

Nanoelectronics Conference 

July, 2013, Washington, DC 

http://www.ivnc2012.org 

12th International Symposium on Sputtering and 

Plasma Processes 

July 10–12, 2013, Kyoto, Japan 

ALD Conference, Atomic Layer Deposition 

July 28–31, 2013, San Diego, California 

http://www.ald-avs.org 

TACT 2013 International Thin Films Conference 

October 5–9, 2013, Tapei, Taiwan 

http://www.tact.org.tw

FUTURE SYMPOSIA LOCATIONS 

2013 October 27–November 1 

Long Beach Convention Center 

Long Beach, California 

2014 November 9–14 

Baltimore Convention Center 

Baltimore, Maryland 

2015 October 18–23 

San Jose Convention Center 

San Jose, California 

Credit: Ron Niebrugge, NIEBRUGGE IMAGES Long Beach, California, Downtown Skyline 

268

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Monday Morning, October 29, 2012 - American Vacuum Society

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